Pub Date : 2017-08-08DOI: 10.7567/ssdm.2017.ps-13-22
K. Taniguchi
For exploring the origin for the interface states in MoS2 FET, the transient response of MOS capacitor to ultra-fast pulsed top gate voltage was studied with high time resolution current measurement system. The difference of time constant originated from trapping and detrapping of electrons on interface states was detected, which cannot be measured in C-V measurement.
{"title":"Detection of electron trapping/detrapping in MoS 2 FET by high time-resolved I-V measurement","authors":"K. Taniguchi","doi":"10.7567/ssdm.2017.ps-13-22","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-13-22","url":null,"abstract":"For exploring the origin for the interface states in MoS2 FET, the transient response of MOS capacitor to ultra-fast pulsed top gate voltage was studied with high time resolution current measurement system. The difference of time constant originated from trapping and detrapping of electrons on interface states was detected, which cannot be measured in C-V measurement.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77233152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.PS-13-24
N. Ketama
This research presents a fabrication of triboelectric nanogenerator (TENG) using the sodium dodecyl sulfate (SDS)-functionalized carbon nanotube (CNT) / polydimethylsiloxane(PDMS) composites (SDS/CNT/PDMS) as a negative electrode and polyethylene terephthalate / indium tin oxide (PET/ITO) as a positive electrode. The effect of CNT concentration and the SDS concentration were on TENG performance were investigated. Experimental results indicate that the SDS/CNT/PDMS is an effective electrode to enhance the output voltage of TENG with a maximum voltage of 66.8 V enabled an approximately 6-fold improvement in voltage output compared to the pristine PDMS. CNT may help to the high conductivity and flexibility of CNT, resulting in fast charge transfer and fast shape-recovery, while SDS may help to increase charge density and furthermore CNT dispersion.
{"title":"Sodium Dodecyl Sulfate-Functionalized Carbon Nanotube / Polydimethylsiloxane Composites for High Performance Triboelectric Nanogenerator","authors":"N. Ketama","doi":"10.7567/SSDM.2017.PS-13-24","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-13-24","url":null,"abstract":"This research presents a fabrication of triboelectric nanogenerator (TENG) using the sodium dodecyl sulfate (SDS)-functionalized carbon nanotube (CNT) / polydimethylsiloxane(PDMS) composites (SDS/CNT/PDMS) as a negative electrode and polyethylene terephthalate / indium tin oxide (PET/ITO) as a positive electrode. The effect of CNT concentration and the SDS concentration were on TENG performance were investigated. Experimental results indicate that the SDS/CNT/PDMS is an effective electrode to enhance the output voltage of TENG with a maximum voltage of 66.8 V enabled an approximately 6-fold improvement in voltage output compared to the pristine PDMS. CNT may help to the high conductivity and flexibility of CNT, resulting in fast charge transfer and fast shape-recovery, while SDS may help to increase charge density and furthermore CNT dispersion.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88692885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.PS-3-14
K. Kukita, T. Uechi, J. Shimokawa, M. Goto, Y. Yokota, S. Kawanaka, T. Tanamoto, M. Koyama, H. Tanimoto, S. Takagi
TCAD simulations have been performed to optimize well designed planar single-gate silicon (Si) vertical tunneling junction field effect transistor (VTFET) with average subthreshold swing (S.S.) less than 60 mV/dec for 0.3 V (=Vgs=Vds) operation. By scaling the equivalent oxide thickness (EOT) and increasing the gate-to-source overlap length Lov, it achieved both on-current (Ion) greater than 1.0 A/m and low average S.S. without pocket doping for forming tunnel junction in conventional VTFET.
利用TCAD仿真优化了设计良好的平面单门硅垂直隧道结场效应晶体管(VTFET)，在0.3 V (=Vgs=Vds)工作下，平均亚阈值摆幅(S.S.)小于60 mV/dec。通过缩放等效氧化物厚度(EOT)和增加栅极-源重叠长度Lov，可以在不掺杂口袋的情况下实现大于1.0A/m的导通电流和较低的平均S.S.，从而实现传统VTFET隧道结的形成。
{"title":"TCAD simulation of planar single-gate Si tunnel FET with average subthreshold swing less than 60 mV/dec for 0.3 V operation","authors":"K. Kukita, T. Uechi, J. Shimokawa, M. Goto, Y. Yokota, S. Kawanaka, T. Tanamoto, M. Koyama, H. Tanimoto, S. Takagi","doi":"10.7567/SSDM.2017.PS-3-14","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-3-14","url":null,"abstract":"TCAD simulations have been performed to optimize well designed planar single-gate silicon (Si) vertical tunneling junction field effect transistor (VTFET) with average subthreshold swing (S.S.) less than 60 mV/dec for 0.3 V (=Vgs=Vds) operation. By scaling the equivalent oxide thickness (EOT) and increasing the gate-to-source overlap length Lov, it achieved both on-current (Ion) greater than 1.0 A/m and low average S.S. without pocket doping for forming tunnel junction in conventional VTFET.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81145271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.A-8-05
J. Kluge, A. Verdy, G. Navarro, S. Blonkowski, V. Sousa, P. Kowalczyk, M. Bernard, N. Bernier, G. Bourgeois, N. Castellani, P. Noé, E. Nowak, L. Perniola
{"title":"Programming Current Reduction in GeS 2 +Sb 2 Te 3 Based Phase-Change Memory","authors":"J. Kluge, A. Verdy, G. Navarro, S. Blonkowski, V. Sousa, P. Kowalczyk, M. Bernard, N. Bernier, G. Bourgeois, N. Castellani, P. Noé, E. Nowak, L. Perniola","doi":"10.7567/SSDM.2017.A-8-05","DOIUrl":"https://doi.org/10.7567/SSDM.2017.A-8-05","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"74 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81066639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.PS-13-20
Q. Lu
{"title":"Experimental Investigation of the Contact Resistance of Graphene/MoS2 Interface Treated with O2 Plasma","authors":"Q. Lu","doi":"10.7567/SSDM.2017.PS-13-20","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-13-20","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78212678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.PS-3-13
Keita Takahashi, K. Komatsu, Toshihiro Sakamoto, K. Kimura, F. Matsuoka
Abstract In this paper, hot-carrier (HC) induced drastic off-state leakage current (Ioff) degradation for the LDMOS is found and the mechanism is also investigated in detail. Continuous on-state drain current flow of the LDMOS generates the HC which is trapped in the STI, and causes the drastic increase of the Ioff for the LDMOS. Therefore, HC induced drastic Ioff increase should be taken into account for the LDMOS design.
{"title":"Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS","authors":"Keita Takahashi, K. Komatsu, Toshihiro Sakamoto, K. Kimura, F. Matsuoka","doi":"10.7567/SSDM.2017.PS-3-13","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-3-13","url":null,"abstract":"Abstract In this paper, hot-carrier (HC) induced drastic off-state leakage current (Ioff) degradation for the LDMOS is found and the mechanism is also investigated in detail. Continuous on-state drain current flow of the LDMOS generates the HC which is trapped in the STI, and causes the drastic increase of the Ioff for the LDMOS. Therefore, HC induced drastic Ioff increase should be taken into account for the LDMOS design.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"508 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77350452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.PS-13-21
T. Kaneko
Using first-principles calculations based on density functional theory, electronic structure of domain boundary of MoS2 in which same polar edges are faced each other are investigated theoretically. We also find that the up-shift of energy bands at the domain boundaries are caused by charge accumulation. For such change in the energy bands, the defect levels at the domain boundaries play a decisive role.
{"title":"First-principles study on domain boundary of MoS 2 : Origin of band bending","authors":"T. Kaneko","doi":"10.7567/SSDM.2017.PS-13-21","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-13-21","url":null,"abstract":"Using first-principles calculations based on density functional theory, electronic structure of domain boundary of MoS2 in which same polar edges are faced each other are investigated theoretically. We also find that the up-shift of energy bands at the domain boundaries are caused by charge accumulation. For such change in the energy bands, the defect levels at the domain boundaries play a decisive role.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82808766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/ssdm.2017.ps-13-25
K. H. Kim
{"title":"Contact Properties of SWNT TCEs via the Microwave Treatment","authors":"K. H. Kim","doi":"10.7567/ssdm.2017.ps-13-25","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-13-25","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"62 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79493175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.E-5-03
D. Ueda
{"title":"Optimizing MOS-Gated Thyristor using Voltage-based Equivalent Circuit Model for Designing Steep Subthreshold Slope PN-Body Tied SOI FET","authors":"D. Ueda","doi":"10.7567/SSDM.2017.E-5-03","DOIUrl":"https://doi.org/10.7567/SSDM.2017.E-5-03","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72653763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-08-08DOI: 10.7567/SSDM.2017.PS-14-11
N. Tajima
We performed first principles calculations to study the C=C defects near SiC/SiO2 interface, and demonstrated that the intra-gap defect levels could be removed by changing the C=C double bond to a C-C single bond.
{"title":"A first principles study on the C=C defects near SiC/SiO 2 interface: Defect passivation by double bond saturation","authors":"N. Tajima","doi":"10.7567/SSDM.2017.PS-14-11","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-14-11","url":null,"abstract":"We performed first principles calculations to study the C=C defects near SiC/SiO2 interface, and demonstrated that the intra-gap defect levels could be removed by changing the C=C double bond to a C-C single bond.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78066110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：