Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-5-03
R. L. Wang, K.-B. Lee, C. Tsai, L.-W. Wang, Y.-Y. Lin, H. Chen, Y. Chuang, H. Liao, H. Tsai, Y. Juang
{"title":"Temperature Sensors with Negative and Positive Temperature Coefficients by Using Cascoded Diode-connected Sub-threshold NMOSFETs and PMOSFETs","authors":"R. L. Wang, K.-B. Lee, C. Tsai, L.-W. Wang, Y.-Y. Lin, H. Chen, Y. Chuang, H. Liao, H. Tsai, Y. Juang","doi":"10.7567/SSDM.2017.PS-5-03","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-03","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83231410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-10-10
T. Morimune
The influence of the organic optical absorbing thickness on measurement accuracy is investigated in one-dimensional organic-sensitive detectors using Al doped ZnO resistive layer. The linearity has been increased as the optical absorbing layer becomes thicker and the maximum measurement error has been improved by increasing the sensitivity of the active layer.
{"title":"The influence of optical absorbing layer thickness on measurement accuracy in inverted structure organic position-sensitive detectors","authors":"T. Morimune","doi":"10.7567/ssdm.2017.ps-10-10","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-10","url":null,"abstract":"The influence of the organic optical absorbing thickness on measurement accuracy is investigated in one-dimensional organic-sensitive detectors using Al doped ZnO resistive layer. The linearity has been increased as the optical absorbing layer becomes thicker and the maximum measurement error has been improved by increasing the sensitivity of the active layer.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78489259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-15-09
K. Boopathi
{"title":"Antimony based Perovskite Materials for Photovoltaic Applications","authors":"K. Boopathi","doi":"10.7567/SSDM.2017.PS-15-09","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-15-09","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85810072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-5-04
R. Maeda, T. Okuda, T. Hikihara
{"title":"Analysis of Dynamic Characteristics of SiC SBD at High Switching Frequency Based on Junction Capacitance","authors":"R. Maeda, T. Okuda, T. Hikihara","doi":"10.7567/SSDM.2017.PS-5-04","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-04","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"61 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91486003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-1-05
S. Kang, D. Lim, S. Lim, J. Noh, S.Mulmargǒnde Kim, S. K. Lee, C.-J. Choi, Byoungho Lee
{"title":"Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET","authors":"S. Kang, D. Lim, S. Lim, J. Noh, S.Mulmargǒnde Kim, S. K. Lee, C.-J. Choi, Byoungho Lee","doi":"10.7567/ssdm.2017.ps-1-05","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-1-05","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"411 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79920579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-10-05
H. Mochizuki, H. Tachibana
We synthesized two novel thiophene-vinylene derivatives with phthalimide groups in both terminals. Thiophene-vinylene skeleton was effective to increase IP and to decrease optical band gap, meanwhile, introduction of phthalimide groups lowered ionization potential value (IP), meanwhile, thiophene-vinylene was effective to increase IP and to decrease optical band gap.
{"title":"Photoelectronic Properties of Thiophene-Vinylene Derivatives with Phthalimide Groups in Both Terminals","authors":"H. Mochizuki, H. Tachibana","doi":"10.7567/ssdm.2017.ps-10-05","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-05","url":null,"abstract":"We synthesized two novel thiophene-vinylene derivatives with phthalimide groups in both terminals. Thiophene-vinylene skeleton was effective to increase IP and to decrease optical band gap, meanwhile, introduction of phthalimide groups lowered ionization potential value (IP), meanwhile, thiophene-vinylene was effective to increase IP and to decrease optical band gap.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85475202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-5-02
K. Nakajima
We devised an alignment method of two image sensors using a Si-interposer with trenches. The trench was formed using deep-reactive ion etching (RIE) equipment. We produced the 3-D range sensor using the method in our experiment and confirmed that sufficient alignment accuracy was realized.
{"title":"Sensor assembly method using Si-interposer with trenches for 3-D binocular range sensors","authors":"K. Nakajima","doi":"10.7567/SSDM.2017.PS-5-02","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-02","url":null,"abstract":"We devised an alignment method of two image sensors using a Si-interposer with trenches. The trench was formed using deep-reactive ion etching (RIE) equipment. We produced the 3-D range sensor using the method in our experiment and confirmed that sufficient alignment accuracy was realized.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"82 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87794050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-1-01
J. Robertson, H. Li
{"title":"Schottky Barrier Heights of Metal Silicides on Si and Ge","authors":"J. Robertson, H. Li","doi":"10.7567/ssdm.2017.ps-1-01","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-1-01","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87378034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-15-02
S. Fujimoto, F. Suetsugu, K. Mukai
We investigated the method to form a perfect quantum dot (QD) superlattice, in which each QD has the same plane orientation, by the deposition of colloidal PbS QDs with clear facets in solution. QD facets were controlled by synthesis temperature. We found that the slower the deposition, the better the orientation alignment of QDs. The energy conversion efficiency of solar cell is expected to be improved with perfect QD superlattice by its high carrier mobility in intermediate bands.
{"title":"Formation of Perfect Superlattice with Aligned Plane Orientation of Colloidal PbS Quantum Dots","authors":"S. Fujimoto, F. Suetsugu, K. Mukai","doi":"10.7567/SSDM.2017.PS-15-02","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-15-02","url":null,"abstract":"We investigated the method to form a perfect quantum dot (QD) superlattice, in which each QD has the same plane orientation, by the deposition of colloidal PbS QDs with clear facets in solution. QD facets were controlled by synthesis temperature. We found that the slower the deposition, the better the orientation alignment of QDs. The energy conversion efficiency of solar cell is expected to be improved with perfect QD superlattice by its high carrier mobility in intermediate bands.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89314133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：