Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-10-08
M. Fukagawa, Y. Koshiba, M. Morimoto, Tatsuya Fukushima, K. Ishida
Poly(vinylidene fluoride-trifluoroethylene)(P(VDFTrFE)) gels were prepared by the permeating ionic l iquid [1-Ethyl-3-methylimidazolium bis(trifluoromethyl sulfonyl)imide] from the surface. The prepared P(VD F-TrFE)/IL gels were structurally and electrically inv estigated. The XRD patterns and FT-IR spectra impl ied that the most part of the P(VDF-TrFE) formed with the ferroelectric Form Ι crystal phase, however, a part of P(VDF-TrFE) showed the new composited structure with ILs in the P(VDF-TrFE) permeated gels. The polarization switching and piezoelectric res ponse of P(VDF-TrFE)/IL permeated gel films were measured. The piezoelectric constant d33 of P(VDF-Tr FE)/IL gel films increased.
{"title":"Structural and Piezoelectric Characterization of P (VDF-TrFE)/Ionic Liquid Gels","authors":"M. Fukagawa, Y. Koshiba, M. Morimoto, Tatsuya Fukushima, K. Ishida","doi":"10.7567/ssdm.2017.ps-10-08","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-08","url":null,"abstract":"Poly(vinylidene fluoride-trifluoroethylene)(P(VDFTrFE)) gels were prepared by the permeating ionic l iquid [1-Ethyl-3-methylimidazolium bis(trifluoromethyl sulfonyl)imide] from the surface. The prepared P(VD F-TrFE)/IL gels were structurally and electrically inv estigated. The XRD patterns and FT-IR spectra impl ied that the most part of the P(VDF-TrFE) formed with the ferroelectric Form Ι crystal phase, however, a part of P(VDF-TrFE) showed the new composited structure with ILs in the P(VDF-TrFE) permeated gels. The polarization switching and piezoelectric res ponse of P(VDF-TrFE)/IL permeated gel films were measured. The piezoelectric constant d33 of P(VDF-Tr FE)/IL gel films increased.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"76 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86176361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-5-01
T. Harada
In this paper, we design, fabricate, and evaluate temperature and magnetic field detectable Octagonal MOSFET sensor. In previous works, one sensor device, such as resistor, capacitor, and etc., can detect only one physical or chemical phenomenon. In order to acquire a lot of information of the outside world, many sensors are necessary. Thus, sensor system may become large. However, multi sensing operation is available for proposed sensor device, octagonal MOSFET type Hall sensor. This sensor can detect both magnetic field and temperature at the same time. As the results, we can realize that sensitivity of magnetic field and temperature are 16.3 mV/T and 0.053 mV/°C, respectively.
{"title":"Octagonal MOSFET for Simultaneous Sensing of Temperature and Magnetic Field","authors":"T. Harada","doi":"10.7567/ssdm.2017.ps-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-5-01","url":null,"abstract":"In this paper, we design, fabricate, and evaluate temperature and magnetic field detectable Octagonal MOSFET sensor. In previous works, one sensor device, such as resistor, capacitor, and etc., can detect only one physical or chemical phenomenon. In order to acquire a lot of information of the outside world, many sensors are necessary. Thus, sensor system may become large. However, multi sensing operation is available for proposed sensor device, octagonal MOSFET type Hall sensor. This sensor can detect both magnetic field and temperature at the same time. As the results, we can realize that sensitivity of magnetic field and temperature are 16.3 mV/T and 0.053 mV/°C, respectively.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87029817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-2-06
C. H. Kumar, A. Panigrahi, P. Supraja, N. Paul, S. Singh
Polder and Van Hove in 1971 forecasted, it is possible to transfer heat between the planer surface by phonon tunneling mechanism, having interlayer separation that is comparable to the phonon wavelength. Towards that, in this work we examined the heat mitigation issues widely prevalent in 3D stacked ICs using finite element analysis. We observed batter heat mitigation by using optimized thickness of heat spreader sandwiched between ICs, containing TTSVs. FEM result shows nearly 15 oC reduction in temperature from 313oC to 298 oC of the top most IC in a 3D stack compared with the case without TTSV and heat spreader in the ILD plane.
{"title":"Facile approach of enhanced heat mitigation between 3D stacked layers by Introducing a sub micron thick heat spreading materials","authors":"C. H. Kumar, A. Panigrahi, P. Supraja, N. Paul, S. Singh","doi":"10.7567/SSDM.2017.PS-2-06","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-2-06","url":null,"abstract":"Polder and Van Hove in 1971 forecasted, it is possible to transfer heat between the planer surface by phonon tunneling mechanism, having interlayer separation \u0000that is comparable to the phonon wavelength. Towards \u0000that, in this work we examined the heat mitigation issues \u0000widely prevalent in 3D stacked ICs using finite element \u0000analysis. We observed batter heat mitigation by using optimized thickness of heat spreader sandwiched between \u0000ICs, containing TTSVs. FEM result shows nearly 15 oC \u0000reduction in temperature from 313oC to 298 oC of the top \u0000most IC in a 3D stack compared with the case without \u0000TTSV and heat spreader in the ILD plane.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"113 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88074570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-10-06
T. Koga, C. Hirakawa, M. Takeshita, N. Terasaki
We successfully detected unstable Cu (I) in copper sulfate plating solution using BCS fluorescence. Quantitative measurement at 10 mol/L or less, out of range with the conventional absorption method, was possible by the fluorescence method. The fluorescent method is promising for Cu (I) analysis in Cu electroplating solution to assure the quality of Cu plating film in higher sensitivity.
{"title":"Detection of Cu (I) in Copper Sulfate Plating Solution Using BCS Fluorescence","authors":"T. Koga, C. Hirakawa, M. Takeshita, N. Terasaki","doi":"10.7567/SSDM.2017.PS-10-06","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-10-06","url":null,"abstract":"We successfully detected unstable Cu (I) in copper sulfate plating solution using BCS fluorescence. Quantitative measurement at 10 mol/L or less, out of range with the conventional absorption method, was possible by the fluorescence method. The fluorescent method is promising for Cu (I) analysis in Cu electroplating solution to assure the quality of Cu plating film in higher sensitivity.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86770919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-15-07
C. Chung
{"title":"[No-show]High-performance and high-durability perovskite photovoltaic devices prepared using ethylammonium iodide as an additive","authors":"C. Chung","doi":"10.7567/ssdm.2017.ps-15-07","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-15-07","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73512903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-15-06
Kouhei Yamamoto, K. Hamada, M. Shahiduzzaman, K. Yonezawa, Makoto Karakawa, T. Kuwabara, Kohshin Takahashi, T. Taima
{"title":"Investigation of Thermal Treatment Effects of PbI 2 Film Yielded Two-step Type Perovskite Solar Cells","authors":"Kouhei Yamamoto, K. Hamada, M. Shahiduzzaman, K. Yonezawa, Makoto Karakawa, T. Kuwabara, Kohshin Takahashi, T. Taima","doi":"10.7567/SSDM.2017.PS-15-06","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-15-06","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75961529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PL-2-01
P. Ranade
{"title":"What is Next in Computing? -A Semiconductor Perspective","authors":"P. Ranade","doi":"10.7567/SSDM.2017.PL-2-01","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PL-2-01","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79556718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-10-09
Y. Sutani, S. Horike, Tatsuya Fukushima, Y. Koshiba, M. Morimoto, T. Kodani, T. Kanemura, K. Ishida
Control of molecular orientation and electric dipoles in a pyroelectric thin film is one of the most important factors to improve the performance of organic infrared ray (IR) sensors. In this study, we have controlled the molecular dipole in a vinylidene fluoride (VDF) oligomer thin film by applying electric field between micro-gapped comb-like electrodes during vacuum deposition. The dipoles in the normally oriented VDF oligomer were highly aligned to the applied electric field in in-plane direction. The pyroelectric IR sensors, fabricated by the oriented VDF oligomer thin film, exhibited the excellent performance even without the poling treatment after the film deposition. A voltage sensitivity of the sensor showed 1473 V/W at 1 Hz, which was much higher value than that of typical sensors applied with the post-poling (~ 200 V/W). The improvement of the sensitivity is considered to be caused by the reduction of injected charges on the poling treatment, which usually causes the suppression of the dipole fluctuations for temperature change.
{"title":"High Voltage Sensitivity of Organic Pyroelectric Sensors with Polarization Treatment during Evaporation Process","authors":"Y. Sutani, S. Horike, Tatsuya Fukushima, Y. Koshiba, M. Morimoto, T. Kodani, T. Kanemura, K. Ishida","doi":"10.7567/ssdm.2017.ps-10-09","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-09","url":null,"abstract":"Control of molecular orientation and electric dipoles in a pyroelectric thin film is one of the most important factors to improve the performance of organic infrared ray (IR) sensors. In this study, we have controlled the molecular dipole in a vinylidene fluoride (VDF) oligomer thin film by applying electric field between micro-gapped comb-like electrodes during vacuum deposition. The dipoles in the normally oriented VDF oligomer were highly aligned to the applied electric field in in-plane direction. The pyroelectric IR sensors, fabricated by the oriented VDF oligomer thin film, exhibited the excellent performance even without the poling treatment after the film deposition. A voltage sensitivity of the sensor showed 1473 V/W at 1 Hz, which was much higher value than that of typical sensors applied with the post-poling (~ 200 V/W). The improvement of the sensitivity is considered to be caused by the reduction of injected charges on the poling treatment, which usually causes the suppression of the dipole fluctuations for temperature change.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85591981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/ssdm.2017.ps-4-08
Y. Oh, T. Ono, Y. Song
The stress distribution and the impact of them to cell characteristics are investigated in vertically stacked NAND flash memory. It is revealed that the stress of contact hole depends on the distance from the tungsten common source line(CSL) slit, which changed the NAND cell characteristics more than 4% respectively. Therefore, position of channel hole contact affects the uniformity of the NAND cell taking into consideration the mechanical stress and should be considered in cell design.
{"title":"Impact of Mechanical Stress to Cell Characteristics in Vertically Stacked NAND Flash Structure","authors":"Y. Oh, T. Ono, Y. Song","doi":"10.7567/ssdm.2017.ps-4-08","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-4-08","url":null,"abstract":"The stress distribution and the impact of them to cell characteristics are investigated in vertically stacked NAND flash memory. It is revealed that the stress of contact hole depends on the distance from the tungsten common source line(CSL) slit, which changed the NAND cell characteristics more than 4% respectively. Therefore, position of channel hole contact affects the uniformity of the NAND cell taking into consideration the mechanical stress and should be considered in cell design.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82816322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-09-12DOI: 10.7567/SSDM.2017.PS-15-08
P. Karuppuswamy
{"title":"New Electron Extraction Layer for Perovskite Solar Cells","authors":"P. Karuppuswamy","doi":"10.7567/SSDM.2017.PS-15-08","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-15-08","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"47 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86539821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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