Based on first-principles calculations incorporating van der Waals corrections, this work systematically investigates the structural, thermal, and mechanical properties of graphene/h-BN heterostructures with different stacking configurations. Among three representative stacking configurations including (αB, βH), (αN, βH), and (αB, βN), the (αB, βH) exhibits the highest thermodynamic, dynamical, and mechanical stability. Then, we separately evaluate the modulation of their electronic structures as well as properties related to electronic transportation or optical absorption under tension or external electric fields, elucidating strain-governed transport variations or electric-field-induced optical response tuning. The results show that under tension, the bandgap evolution differs markedly between the elastic and plastic deformation regimes. Meanwhile, strain significantly enhances the anisotropy of electronic states, enabling direction-dependent effective-mass modulation and carrier mobility. Under externally applied electric fields, the stacking configurations exhibit different band-structure responses, originating from field-driven modulation of the interlayer potential and charge redistribution. Moreover, the heterostructures indeed exhibit excellent optical absorption from the near-infrared to the far-ultraviolet region, with the external electric field enabling controllable spectral tuning. Overall, this work elucidates the fundamental mechanisms underlying independent multi-field tuning in graphene/h-BN heterostructures, providing essential theoretical guidance for their application in high-performance electronic and tunable optoelectronic devices.
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