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Ultra-low hydrogen sulfide gas detection of metal-organic framework derived hollowed-out rod-shaped copper oxide nanostructures 金属有机框架衍生的空心棒状氧化铜纳米结构的超低硫化氢气体探测技术
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-14 DOI: 10.1016/j.apsusc.2024.161628
Haiqing Jiang, Xukun Wang, Xinge Wang, Yuan Lin, Yuhao Zhang, Qingfeng Wu, Yan Ding, Meixia Su, Guo Liu, Erqing Xie, Jinyuan Zhou, Juan Li, Zhenxing Zhang
Highly selective detection of hydrogen sulfide (H2S) at low temperatures has broad applications in industries, agriculture, and the healthcare sector. However, the practical application of metal oxide semiconductor (MOS) resistive gas sensors is greatly limited by their inherent high operating temperature, low response, and low selectivity. To further enhance the detection performance of H2S gas, this study proposes and investigates an efficient hydrogen sulfide (H2S) gas sensor based on hollowed-out rod-shaped copper oxide (CuO) derived from metal-organic frameworks (MOF). The sensor material was synthesized using a solvothermal method to prepare the precursor copper terephthalate metal–organic frameworks (CuBDC) and then calcinated under high temperatures. The sensor prepared at 500 °C exhibits the most outstanding gas sensitivity, with a response as high as 330 (Rg/Ra) to 1 ppm H2S at room temperature (20 °C) and theoretical detection limits at the ppt level, excellent selectivity and stability. The gas sensing mechanism is briefly explained through an oxygen adsorption model. The research results underscore the potential application prospects of this sensor in H2S detection, providing a new direction for developing high-performance, low-cost, and highly efficient gas sensors.
低温下硫化氢(H2S)的高选择性检测在工业、农业和医疗保健领域有着广泛的应用。然而,金属氧化物半导体(MOS)电阻式气体传感器因其固有的高工作温度、低响应和低选择性而在实际应用中受到很大限制。为了进一步提高硫化氢(H2S)气体的检测性能,本研究提出并研究了一种基于金属有机框架(MOF)的空心棒状氧化铜(CuO)的高效硫化氢(H2S)气体传感器。该传感器材料采用溶热法合成前体对苯二甲酸铜金属有机框架(CuBDC),然后在高温下煅烧。在 500 °C 下制备的传感器具有最出色的气体灵敏度,在室温(20 °C )下对 1 ppm H2S 的响应高达 330 (Rg/Ra),理论检测限为 ppt 级,并具有出色的选择性和稳定性。通过氧吸附模型简要解释了气体传感机理。研究成果强调了该传感器在 H2S 检测中的潜在应用前景,为开发高性能、低成本和高效率的气体传感器提供了新的方向。
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引用次数: 0
How sulfur-containing additives stabilize Electrode/Electrolyte interface of high voltage Graphite/LiCoO2 battery 含硫添加剂如何稳定高压石墨/钴酸锂电池的电极/电解质界面
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-14 DOI: 10.1016/j.apsusc.2024.161805
Siwu Wang, Huajun Guo, Xinhai Li, Zhixing Wang, Wenjie Peng, Jiexi Wang, Hui Duan, Guangchao Li, Guochun Yan
Film-forming additives have been studied as one of efficient choices to improve battery performance. However, the relationship among film-forming additives, interphase film and battery performance remain mysterious. A comparative study was conducted on the effects of four sulfur-containing cyclic additives, sulfolane (Sul), 1,2-Ethylene Sulfite (ES), 1,3-Propane sultone (PS), and 1,3,2-Dioxathiolan-2,2-oxide (DTD), on the properties of interphase film. Through time-of-flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) detection, an “effective interfacial functional group (EIFG)”, sulfonate (−O-SO2-), was discovered in the electrode/electrolyte interphase (EEI) film of cells containing PS or DTD added electrolytes. It can stabilize the interphase and inhibit the continued decomposition of the electrolyte, thereby improving the electrochemical performance of 4.48 V graphite/LiCoO2 full-cell and 4.55 V Li/LiCoO2 half-cell. The capacity retention of the full-cell after 200 cycles exceeds 87 %, and that of half-cell after 300 cycles is nearly 90 %. Based on differential electrochemical mass spectra (DEMS), XPS detection during formation process and theoretical calculation results, it can be revealed that the similar EIFG-containing components can be obtained through different reaction pathways even with additives containing different functional groups. This provides an important basis for the design of new additives/electrolytes.
成膜添加剂作为提高电池性能的有效选择之一,已被广泛研究。然而,成膜添加剂、相间薄膜和电池性能之间的关系仍然是个谜。本研究比较研究了四种含硫环状添加剂,即磺基乙烷(Sul)、1,2-亚硫酸乙烯(ES)、1,3-丙烷磺酮(PS)和 1,3,2-二氧硫环戊烷-2,2-氧化物(DTD)对相间膜性能的影响。通过飞行时间二次离子质谱(TOF-SIMS)和 X 射线光电子能谱(XPS)检测,在添加了 PS 或 DTD 电解质的电池的电极/电解质相间(EEI)薄膜中发现了一种 "有效界面官能团(EIFG)",即磺酸盐(-O-SO2-)。它可以稳定电解质间相,抑制电解质的继续分解,从而改善 4.48 V 石墨/LiCoO2 全电池和 4.55 V Li/LiCoO2 半电池的电化学性能。全电池在循环 200 次后的容量保持率超过 87%,半电池在循环 300 次后的容量保持率接近 90%。根据微分电化学质谱 (DEMS)、形成过程中的 XPS 检测和理论计算结果,可以发现即使添加含有不同官能团的添加剂,也可以通过不同的反应途径获得类似的含 EIFG 的成分。这为设计新型添加剂/电解质提供了重要依据。
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引用次数: 0
Controlling the microenvironment by introducing dual metal atoms into ZIF-L to enhance hydrogen evolution activity 通过在 ZIF-L 中引入双金属原子来控制微环境,从而提高氢进化活性
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-14 DOI: 10.1016/j.apsusc.2024.161791
Yongteng Qian, Yue Sun, Fangfang Zhang, Yupeng Song, Xiaohui Luo, Lin Shen, Minkyun Sohn, Hu Shi, Dae Joon Kang
In this study, we introduce an efficient strategy to enhance the electrocatalytic performance of ZIF-L by injecting dual metal atoms, specifically Co and Cu, using a facile hydrothermal reaction method. The optimized Co,Cu-ZIF-L composites showed exceptional hydrogen evolution activities with overpotentials of 70 and 145 mV under 10 and 50 mA cm−2 in alkaline media. The Co,Cu-ZIF-L composites also displayed excellent cycling stability (∼ 90 h) for hydrogen evolution. The enhanced electrocatalytic performance is attributed to the dual metal atoms, which not only introduce abundant active sites but also improve the structural integrity and catalytic kinetics by regulating the catalytic microenvironment. Density functional theory calculations further support that the injection of Co and Cu atoms into the ZIF-L optimizes the free adsorption energy of hydrogen intermediates, accelerating HER kinetics. This work confirms that injecting highly conductive metal atom into MOFs to regulate the catalytic microenvironment is a potential route to significantly increase the electrocatalytic activity of MOFs.
在本研究中,我们采用一种简便的水热反应方法,通过注入双金属原子(特别是 Co 和 Cu)来提高 ZIF-L 的电催化性能。优化后的 Co、Cu-ZIF-L 复合材料在碱性介质中 10 mA cm-2 和 50 mA cm-2 条件下的过电位分别为 70 mV 和 145 mV,显示出卓越的氢进化活性。Co、Cu-ZIF-L 复合材料还显示出卓越的氢进化循环稳定性(∼ 90 h)。电催化性能的提高归功于双金属原子,它们不仅引入了丰富的活性位点,还通过调节催化微环境改善了结构的完整性和催化动力学。密度泛函理论计算进一步证明,在 ZIF-L 中注入 Co 原子和 Cu 原子可优化氢中间产物的自由吸附能,从而加速氢氧还原动力学。这项研究证实,向 MOFs 中注入高导电性金属原子以调节催化微环境是显著提高 MOFs 电催化活性的潜在途径。
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引用次数: 0
Butadiene hydrogenation on N-doped carbon-hosted non-noble metal nanostructures 丁二烯在掺杂 N 的碳托管非贵金属纳米结构上的氢化作用
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-14 DOI: 10.1016/j.apsusc.2024.161787
Xintai Chen, Zhibing Chen, Luyao Guo, Yali Lv, Xiaoling Mou, Jiaxu Liu, Li Yan, Ronghe Lin, Yunjie Ding
Diverse N-doped carbon-supported non-noble metal nanostructures (Ni, Co, Fe, Cu) are designed, and explored in selective butadiene hydrogenation. Focusing on particle size and composition, optimal catalytic performance is observed with Ni catalysts, where smaller metallic Ni particles of ca. 6.2 nm exhibit superior activity and larger ones (14–47 nm) display much higher total butene selectivity. An integral approach combining detailed kinetics, chemisorption, and dual-beam Fourier transform infrared spectroscopic study is performed to rationalize the Ni particle size effect. The findings reveal that smaller Ni particles offer improved activation of butadiene and hydrogen due to advantageous adsorption dynamics. Spectroscopic examinations further suggest different adsorption configurations existing on Ni particles, with larger particles displaying strong π-adsorption, which impedes hydrogen replacement. Additionally, the stability of the catalysts is scrutinized under various reaction conditions, revealing that deactivation occurs more rapidly at lower temperatures, primarily due to mild coke deposition.
我们设计了多种掺杂 N 的碳支撑非贵金属纳米结构(Ni、Co、Fe、Cu),并在选择性丁二烯氢化中进行了探索。以颗粒大小和组成为重点,观察到镍催化剂具有最佳催化性能,其中约 6.2 纳米的较小金属镍颗粒显示出卓越的活性,而较大的金属镍颗粒(14-47 纳米)则显示出更高的总丁烯选择性。为了合理解释镍颗粒尺寸效应,研究人员采用了一种综合方法,将详细的动力学、化学吸附和双光束傅立叶变换红外光谱研究结合起来。研究结果表明,由于具有吸附动力学优势,较小的镍颗粒能更好地活化丁二烯和氢气。光谱检测进一步表明,镍颗粒上存在不同的吸附构型,较大的颗粒显示出较强的π吸附,阻碍了氢的置换。此外,还对催化剂在各种反应条件下的稳定性进行了仔细研究,结果表明,在较低温度下,失活发生得更快,这主要是由于轻度焦炭沉积所致。
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引用次数: 0
Orthokeratology lens care: Surface treatment by an atmospheric pulsed microwave air plasma jet 角膜塑形镜护理:用大气脉冲微波空气等离子喷射器进行表面处理
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-14 DOI: 10.1016/j.apsusc.2024.161806
Sile Chen, Xinrui Chen, Jiexin Hu, Chao Wang, Zhaoquan Chen, Ping Li
Orthokeratology lens (OK lens) is one of the effective tools for myopia correction in adolescents. Currently, the OK lens is maintained by surface treatment of the atmospheric argon plasma jet for wearing comfort, sterilization and cleaning. In order to increase the concentration of reactive species and the convenience of plasma device, an atmospheric pulsed microwave air plasma jet is developed and used to treat the OK lens. The electrical and optical characteristics of the microwave air plasma jet are evaluated by the discharge images, optical emission spectrum (OES), gas temperature and electron density, while the surface physical and chemical characteristics of OK lens are studied by the surface wettability, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The results indicate that the surface wettability of OK lens increases after plasma treatment, while no significant changes in surface morphology are observed. The increase of oxygen-containing groups, decrease of fluorine-containing groups and formation of silicates on the lens surface are the main reasons for the enhancement of hydrophilicity. Surface treatment by pulsed microwave air plasma jet is a promising method for OK lens care, which provids a technical approach for portable lens care devices.
角膜塑形镜(OK镜)是矫正青少年近视的有效工具之一。目前,为了佩戴舒适、杀菌和清洁,OK 镜都是通过大气氩等离子喷射器进行表面处理。为了提高反应物的浓度和等离子装置的便利性,开发了大气脉冲微波空气等离子射流,并用于处理 OK 镜片。通过放电图像、光学发射光谱(OES)、气体温度和电子密度评估了微波空气等离子体射流的电学和光学特性,并通过表面润湿性、扫描电子显微镜(SEM)、X 射线光电子能谱(XPS)和傅立叶变换红外光谱(FTIR)研究了 OK 镜片的表面物理和化学特性。结果表明,经等离子处理后,OK镜片的表面润湿性增加,但表面形貌未发生显著变化。镜片表面含氧基团的增加、含氟基团的减少和硅酸盐的形成是亲水性增强的主要原因。利用脉冲微波空气等离子体喷射进行表面处理是一种很有前途的 OK 镜片护理方法,它为便携式镜片护理设备提供了一种技术途径。
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引用次数: 0
Relationship between particle interface structure and performance of cold sprayed CuCrZr deposit 颗粒界面结构与冷喷 CuCrZr 沉积物性能的关系
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-14 DOI: 10.1016/j.apsusc.2024.161794
Min Yu, Yunzhe Zhang, Peiyuan Lv, Hui Chen
Cold spraying is considered as a promising technique for fabricating CuCrZr deposits attributed to its distinct plastic deformation feature. In the present study, the feasibility of this technique is validated through exploring correlations between the interface microstructure with mechanical and thermal properties. Assessment of structure–property correlations was attempted based on particle interface characteristics, together with Cr and Zr precipitates, and mechanical and thermal properties using electron backscatter diffraction, nanoindentation, adhesive shear strength and thermal conduction tests. Results show that annealing heat treatment reconstructs the particle interface through recovery and growth of ultrafine grains, leading to the reduction of porosity and enhancement of shear strength and toughness. Coupled with the re-crystallized fine grains and precipitation strengthening of the Cr oxide and CuxZry phase, the decrease in hardness due to the release of work hardening in the annealed deposits could be compensated, thereby demonstrating good thermal stability. Finally, the combination of decreased porosity and strengthened interface bonding causes the increased heat conductivity of the annealed deposits. Therefore, the combined technique of cold spraying and annealing heat treatment may be a potential solution for balancing the strength and thermal conductivity of CuCrZr.
冷喷技术具有明显的塑性变形特征,因此被认为是制造 CuCrZr 沉积物的一种有前途的技术。在本研究中,通过探索界面微观结构与机械性能和热性能之间的相关性,验证了这种技术的可行性。利用电子反向散射衍射、纳米压痕、粘合剪切强度和热传导测试,根据颗粒界面特征、铬和锆析出物以及机械和热性能,尝试评估结构与性能之间的相关性。结果表明,退火热处理通过超细晶粒的恢复和生长重建了颗粒界面,从而降低了孔隙率,提高了剪切强度和韧性。再加上细晶粒的再结晶以及氧化铬和 CuxZry 相的沉淀强化,退火沉积物中因加工硬化释放而导致的硬度下降可以得到补偿,从而表现出良好的热稳定性。最后,孔隙率的降低和界面结合力的增强共同导致了退火镀层导热率的提高。因此,冷喷涂和退火热处理相结合的技术可能是平衡 CuCrZr 强度和导热性的一种潜在解决方案。
{"title":"Relationship between particle interface structure and performance of cold sprayed CuCrZr deposit","authors":"Min Yu,&nbsp;Yunzhe Zhang,&nbsp;Peiyuan Lv,&nbsp;Hui Chen","doi":"10.1016/j.apsusc.2024.161794","DOIUrl":"10.1016/j.apsusc.2024.161794","url":null,"abstract":"<div><div>Cold spraying is considered as a promising technique for fabricating CuCrZr deposits attributed to its distinct plastic deformation feature. In the present study, the feasibility of this technique is validated through exploring correlations between the interface microstructure with mechanical and thermal properties. Assessment of structure–property correlations was attempted based on particle interface characteristics, together with Cr and Zr precipitates, and mechanical and thermal properties using electron backscatter diffraction, nanoindentation, adhesive shear strength and thermal conduction tests. Results show that annealing heat treatment reconstructs the particle interface through recovery and growth of ultrafine grains, leading to the reduction of porosity and enhancement of shear strength and toughness. Coupled with the re-crystallized fine grains and precipitation strengthening of the Cr oxide and Cu<sub>x</sub>Zr<sub>y</sub> phase, the decrease in hardness due to the release of work hardening in the annealed deposits could be compensated, thereby demonstrating good thermal stability. Finally, the combination of decreased porosity and strengthened interface bonding causes the increased heat conductivity of the annealed deposits. Therefore, the combined technique of cold spraying and annealing heat treatment may be a potential solution for balancing the strength and thermal conductivity of CuCrZr.</div></div>","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"683 ","pages":"Article 161794"},"PeriodicalIF":6.3,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142610253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Covalent functionalization of boron nitride nanotubes by radical reagents 利用自由基试剂对氮化硼纳米管进行共价官能化
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-13 DOI: 10.1016/j.apsusc.2024.161749
Thang Quoc Huynh, Jeung Gon Kim, Seokhoon Ahn
Boron nitride nanotubes (BNNT) possess outstanding properties, but their utilization is limited by poor solubility and processability. Current functionalization methods to address these issues employ overly harsh reaction conditions. A milder functionalization approach is needed to unlock the full potential of BNNT for diverse applications while maintaining their excellent properties. Herein, radicals generated by the decomposition of benzoyl peroxide in presence of alkyl iodides have been used to functionalize inert nature BNNT. Confirmation of successful covalent functionalization is established using infrared spectroscopy (IR), thermal gravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), and transmission electron microscopy (TEM). UV–Vis was used to estimate the excellent dispersion of functionalized BNNT in comparison with pristine BNNT in the two most common solvents for polymer dissolution tetrahydrofuran (THF), and dimethylformamide (DMF). This gentle functionalization process maintains the exceptional characteristics of BNNT, while simultaneously enabling their broad application and unlocking numerous novel and promising avenues for materials innovation.
氮化硼纳米管(BNNT)具有出色的性能,但由于其溶解性和加工性较差,其利用受到限制。目前解决这些问题的功能化方法采用了过于苛刻的反应条件。我们需要一种更温和的功能化方法,以充分释放 BNNT 在各种应用中的潜力,同时保持其优异的性能。在此,我们利用过氧化苯甲酰在烷基碘化物存在下分解产生的自由基对惰性 BNNT 进行功能化。利用红外光谱(IR)、热重分析(TGA)、X 射线光电子能谱(XPS)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)证实了共价官能化的成功。紫外可见光分析用于评估功能化 BNNT 在两种最常用的聚合物溶解溶剂四氢呋喃(THF)和二甲基甲酰胺(DMF)中的分散性,与原始 BNNT 相比,功能化 BNNT 的分散性极佳。这种温和的功能化过程保持了 BNNT 的优异特性,同时使其得到了广泛的应用,并为材料创新开辟了众多新颖且前景广阔的途径。
{"title":"Covalent functionalization of boron nitride nanotubes by radical reagents","authors":"Thang Quoc Huynh, Jeung Gon Kim, Seokhoon Ahn","doi":"10.1016/j.apsusc.2024.161749","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.161749","url":null,"abstract":"Boron nitride nanotubes (BNNT) possess outstanding properties, but their utilization is limited by poor solubility and processability. Current functionalization methods to address these issues employ overly harsh reaction conditions. A milder functionalization approach is needed to unlock the full potential of BNNT for diverse applications while maintaining their excellent properties. Herein, radicals generated by the decomposition of benzoyl peroxide in presence of alkyl iodides have been used to functionalize inert nature BNNT. Confirmation of successful covalent functionalization is established using infrared spectroscopy (IR), thermal gravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), and transmission electron microscopy (TEM). UV–Vis was used to estimate the excellent dispersion of functionalized BNNT in comparison with pristine BNNT in the two most common solvents for polymer dissolution tetrahydrofuran (THF), and dimethylformamide (DMF). This gentle functionalization process maintains the exceptional characteristics of BNNT, while simultaneously enabling their broad application and unlocking numerous novel and promising avenues for materials innovation.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"10 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142601176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of positive bevel β-Ga2O3 trench MOS barrier Schottky diode by post-etching treatment 通过蚀刻后处理提高正斜面 β-Ga2O3 沟槽 MOS 势垒肖特基二极管的性能
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-13 DOI: 10.1016/j.apsusc.2024.161569
Fang Zhang, Xue Feng Zheng, Ye Hong Li, Zi Jian Yuan, Shao Zhong Yue, Xi Chen Wang, Yun Long He, Xiao Li Lu, Xiao Hua Ma, Yue Hao
A β-Ga2O3 trench MOS barrier Schottky (TMBS) diode with a novel terminal structure of positive bevel mesa and arc bottom corners has been designed and realized in this work. O2 plasma, hydrogen fluoride (HF), and tetramethylammonium hydroxide (TMAH) are used for post-etching treatment of devices, respectively. Measurement results shows that the specific on-resistance of the three devices are nearly with the same value of 2.60 mΩ·cm2. The breakdown voltage of the devices with O2 plasma, HF, and TMAH treatments are 1280 V, 1440 V, and 1800 V, respectively. Moreover, it is worth nothing that devices treated with O2 plasma have a lower reverse leakage. In addition, the breakdown location of the device is determined to be at the β-Ga2O3 interface under the edge of the field plate by combining simulation and capacitance breakdown testing. AFM and XPS are used to analyze the surface properties of β-Ga2O3 after post-etching treatments. The results show that the TMAH treatments have the most significant effect on reducing surface roughness, and the O2 plasma treatments is the most effective in decreasing oxygen vacancies.
本研究设计并实现了一种β-Ga2O3沟槽MOS势垒肖特基(TMBS)二极管,该二极管具有正斜面崮和弧形底角的新型端子结构。器件的蚀刻后处理分别采用了氧气等离子体、氟化氢(HF)和四甲基氢氧化铵(TMAH)。测量结果表明,三种器件的比导通电阻值几乎相同,均为 2.60 mΩ-cm2。经过 O2 等离子、HF 和 TMAH 处理的器件的击穿电压分别为 1280 V、1440 V 和 1800 V。此外,值得注意的是,经过 O2 等离子处理的器件具有较低的反向漏电。此外,通过结合模拟和电容击穿测试,确定了器件的击穿位置位于场板边缘下的β-Ga2O3 接口。利用原子力显微镜和 XPS 分析了蚀刻后处理后 β-Ga2O3 的表面特性。结果表明,TMAH 处理对降低表面粗糙度的效果最显著,而 O2 等离子体处理对减少氧空位最有效。
{"title":"Enhancement of positive bevel β-Ga2O3 trench MOS barrier Schottky diode by post-etching treatment","authors":"Fang Zhang, Xue Feng Zheng, Ye Hong Li, Zi Jian Yuan, Shao Zhong Yue, Xi Chen Wang, Yun Long He, Xiao Li Lu, Xiao Hua Ma, Yue Hao","doi":"10.1016/j.apsusc.2024.161569","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.161569","url":null,"abstract":"A <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> trench MOS barrier Schottky (TMBS) diode with a novel terminal structure of positive bevel mesa and arc bottom corners has been designed and realized in this work. O<sub>2</sub> plasma, hydrogen fluoride (HF), and tetramethylammonium hydroxide (TMAH) are used for post-etching treatment of devices, respectively. Measurement results shows that the specific on-resistance of the three devices are nearly with the same value of 2.60 mΩ·cm<sup>2</sup>. The breakdown voltage of the devices with O<sub>2</sub> plasma, HF, and TMAH treatments are 1280 V, 1440 V, and 1800 V, respectively. Moreover, it is worth nothing that devices treated with O<sub>2</sub> plasma have a lower reverse leakage. In addition, the breakdown location of the device is determined to be at the <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> interface under the edge of the field plate by combining simulation and capacitance breakdown testing. AFM and XPS are used to analyze the surface properties of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> after post-etching treatments. The results show that the TMAH treatments have the most significant effect on reducing surface roughness, and the O<sub>2</sub> plasma treatments is the most effective in decreasing oxygen vacancies.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"41 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142601177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain-tunable robust ferroelectricity in two-dimensional monochalcogenide heterostructures 二维单卤化物异质结构中的应变可调稳健铁电性
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-13 DOI: 10.1016/j.apsusc.2024.161785
Ramesh Paudel, S.Pamir Alpay
Low-dimensional layered ferroelectric van der Waals heterostructures (vdWHs) are of tremendous interest for novel nanoscale electronic applications, including nonvolatile memories, transistors, and sensors. Here, we design SnS/GeSe multilayer vdWHs and show that the construct is ferroelectric with a spontaneous polarization of 3.71 × 10-10 Cm−1. We computationally analyze SnS and GeSe monolayers (MLs) and SnS/GeSe heterostructures using density functional theory (DFT) with van der Waals (vdW) correlations. Specifically, we determine structural parameters, formation energies, polarization, and phonon modes. Negative formation energies with real frequencies of phonon spectra confirm the (relative) stabilities of SnS and GeSe monolayers (MLs) and SnS/GeSe heterostructures. The electronic properties of both monolayers are retained in the SnS/GeSe construct, which exhibits a direct band gap with a value of 1.13 eV. The calculations of phonon spectra and double-well potential of monolayers unveil a Pnm21 ferroelectric – Pnmm paraelectric phase transformation. The SnS/GeSe multilayer shows the largest spontaneous polarization of 3.71 × 10-10 Cm−1 compared to 2.78 × 10-10 Cm−1 and 3.69 × 10-10 Cm−1 for SnS- and GeSe-MLs, respectively. Additionally, we demonstrate that the spontaneous polarization, band gap, dynamic stability, and band gap types of SnS/GeSe heterostructures can be tuned through the application of biaxial strains. For an in-plane 5 % tensile strain, SnS/GeSe has a spontaneous polarization of 3.90 × 10-10 Cm−1. The band gap of the SnS/GeSe heterostructure widens with increasing tensile biaxial strain, maintaining its characteristics as a direct band gap semiconductor up to 2 % tensile strain. These findings demonstrate that SnS/GeSe heterostructures are promising materials with significant potential for applications in nanoelectronics.
低维层状铁电范德华异质结构(vdWHs)在新型纳米级电子应用(包括非易失性存储器、晶体管和传感器)方面具有极大的吸引力。在这里,我们设计了 SnS/GeSe 多层 vdWHs,并证明该结构具有铁电性,自发极化为 3.71 × 10-10 Cm-1。我们利用范德华(vdW)相关的密度泛函理论(DFT)对SnS和GeSe单层(MLs)以及SnS/GeSe异质结构进行了计算分析。具体来说,我们确定了结构参数、形成能、极化和声子模式。负形成能与声子光谱的实际频率证实了SnS和GeSe单层(MLs)以及SnS/GeSe异质结构的(相对)稳定性。在 SnS/GeSe 结构中保留了两个单层的电子特性,其直接带隙值为 1.13 eV。声子光谱和单层双阱电位的计算揭示了 Pnm21 铁电-Pnmm 准电的相变。SnS/GeSe 多层显示出最大的自发极化(3.71 × 10-10 Cm-1),而 SnS-MLs 和 GeSe-MLs 的自发极化分别为 2.78 × 10-10 Cm-1 和 3.69 × 10-10 Cm-1。此外,我们还证明了 SnS/GeSe 异质结构的自发极化、带隙、动态稳定性和带隙类型可以通过施加双轴应变进行调整。在平面内拉伸应变为 5% 时,SnS/GeSe 的自发极化为 3.90 × 10-10 Cm-1。随着拉伸双轴应变的增加,SnS/GeSe 异质结构的带隙也随之扩大,在拉伸应变达到 2% 时仍能保持其直接带隙半导体的特性。这些研究结果表明,SnS/GeSe 异质结构是一种前景广阔的材料,在纳米电子学中具有巨大的应用潜力。
{"title":"Strain-tunable robust ferroelectricity in two-dimensional monochalcogenide heterostructures","authors":"Ramesh Paudel, S.Pamir Alpay","doi":"10.1016/j.apsusc.2024.161785","DOIUrl":"https://doi.org/10.1016/j.apsusc.2024.161785","url":null,"abstract":"Low-dimensional layered ferroelectric van der Waals heterostructures (vdWHs) are of tremendous interest for novel nanoscale electronic applications, including nonvolatile memories, transistors, and sensors. Here, we design SnS/GeSe multilayer vdWHs and show that the construct is ferroelectric with a spontaneous polarization of 3.71 × 10<sup>-10</sup> <!-- -->Cm<sup>−1</sup>. We computationally analyze SnS and GeSe monolayers (MLs) and SnS/GeSe heterostructures using density functional theory (DFT) with van der Waals (vdW) correlations. Specifically, we determine structural parameters, formation energies, polarization, and phonon modes. Negative formation energies with real frequencies of phonon spectra confirm the (relative) stabilities of SnS and GeSe monolayers (MLs) and SnS/GeSe heterostructures. The electronic properties of both monolayers are retained in the SnS/GeSe construct, which exhibits a direct band gap with a value of 1.13 eV. The calculations of phonon spectra and double-well potential of monolayers unveil a Pnm21 ferroelectric – Pnmm paraelectric phase transformation. The SnS/GeSe multilayer shows the largest spontaneous polarization of 3.71 × 10<sup>-10</sup> <!-- -->Cm<sup>−1</sup> <!-- -->compared to 2.78 × 10<sup>-10</sup> <!-- -->Cm<sup>−1</sup> <!-- -->and 3.69 × 10<sup>-10</sup> <!-- -->Cm<sup>−1</sup> <!-- -->for SnS- and GeSe-MLs, respectively.<!-- --> <!-- -->Additionally, we demonstrate that the spontaneous polarization, band gap, dynamic stability, and band gap types of SnS/GeSe heterostructures can be tuned through the application of biaxial strains. For an in-plane 5 % tensile strain, SnS/GeSe has a spontaneous polarization of 3.90 × 10<sup>-10</sup> <!-- -->Cm<sup>−1</sup>. The band gap of the SnS/GeSe heterostructure widens with increasing tensile biaxial strain, maintaining its characteristics as a direct band gap semiconductor up to 2 % tensile strain. These findings demonstrate that SnS/GeSe heterostructures are promising materials with significant potential for applications in nanoelectronics.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"17 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142601178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of molecular layer deposition of zinc-based hybrid film as photoresist 锌基混合薄膜作为光刻胶的分子层沉积研究
IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2024-11-13 DOI: 10.1016/j.apsusc.2024.161727
Yiyang Shan , Xingkun Wang , Xu Zheng , Xiang Zhao , Ze Feng , Weihua Wang , Yahui Cheng , Hui Liu , Kui Tan , Feng Luo , Hong Dong
Molecular layer deposition (MLD) of metal oxide and organic hybrid thin films has great potential to be utilized in extreme ultraviolet photoresist, thanks to its excellent uniformity on the nanometer scale thickness control. Zn has large photoelectron effect cross-section, resulting in lots of secondary electrons, which can break the organic bonds, causing changes in solubility upon the ultraviolet (UV) light exposure. In this work, Zn-based MLD thin films have been demonstrated for their potential to be used as photoresist for extreme ultraviolet (EUV) application. UV light exposure mechanisms have been proposed based on X-ray photoelectron spectroscopy (XPS) analysis.
金属氧化物和有机杂化薄膜的分子层沉积(MLD)在纳米级厚度控制上具有极佳的均匀性,因此在极紫外光阻剂中具有巨大的应用潜力。Zn 具有较大的光电子效应截面,会产生大量的次级电子,这些次级电子会破坏有机键,从而在紫外线(UV)照射下导致溶解度发生变化。在这项研究中,Zn 基 MLD 薄膜被证明具有用作极紫外(EUV)光刻胶的潜力。根据 X 射线光电子能谱(XPS)分析提出了紫外线照射机制。
{"title":"Study of molecular layer deposition of zinc-based hybrid film as photoresist","authors":"Yiyang Shan ,&nbsp;Xingkun Wang ,&nbsp;Xu Zheng ,&nbsp;Xiang Zhao ,&nbsp;Ze Feng ,&nbsp;Weihua Wang ,&nbsp;Yahui Cheng ,&nbsp;Hui Liu ,&nbsp;Kui Tan ,&nbsp;Feng Luo ,&nbsp;Hong Dong","doi":"10.1016/j.apsusc.2024.161727","DOIUrl":"10.1016/j.apsusc.2024.161727","url":null,"abstract":"<div><div>Molecular layer deposition (MLD) of metal oxide and organic hybrid thin films has great potential to be utilized in extreme ultraviolet photoresist, thanks to its excellent uniformity on the nanometer scale thickness control. Zn has large photoelectron effect cross-section, resulting in lots of secondary electrons, which can break the organic bonds, causing changes in solubility upon the ultraviolet (UV) light exposure. In this work, Zn-based MLD thin films have been demonstrated for their potential to be used as photoresist for extreme ultraviolet (EUV) application. UV light exposure mechanisms have been proposed based on X-ray photoelectron spectroscopy (XPS) analysis.</div></div>","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"683 ","pages":"Article 161727"},"PeriodicalIF":6.3,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142601215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Applied Surface Science
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