Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654251
S. Hubbard, M. Tabib-Azar, S. Bailey, G. Rybicki, P. Neudeck, R. Raffaelle
Minority-carrier diffusion lengths in n-type 6H-SiC solar cells were measured using the planar electron-beam induced current (EBIC) technique. Experimental values of electron beam current, EBIC and beam voltage were obtained for n-type SIC with a carrier concentration of 1.7E17 cm/sup -3/. This data was fit to theoretically calculated diode efficiency curves, and the diffusion length and metal layer thickness extracted. The extracted hole diffusion length ranged from 0.68 /spl mu/m to 1.46 /spl mu/m. The error for these values was /spl plusmn/15%. Additionally, we introduce a novel variation of the planar technique. This "planar mapping" technique measures diffusion length along a linescan creating a map of diffusion length versus position. This map is overlaid onto the EBIC image of the linescan, allowing direct visualization of the effect of crystal defects on minority carrier diffusion length. Diffusion length maps of both n and p-type 6H SiC show that large micropipe defects severely limit the minority carrier diffusion length, reducing it well below 0.1 /spl mu/m inside large defects.
{"title":"Effect of crystal defects on minority carrier diffusion lengths in 6H SiC [solar cells]","authors":"S. Hubbard, M. Tabib-Azar, S. Bailey, G. Rybicki, P. Neudeck, R. Raffaelle","doi":"10.1109/PVSC.1997.654251","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654251","url":null,"abstract":"Minority-carrier diffusion lengths in n-type 6H-SiC solar cells were measured using the planar electron-beam induced current (EBIC) technique. Experimental values of electron beam current, EBIC and beam voltage were obtained for n-type SIC with a carrier concentration of 1.7E17 cm/sup -3/. This data was fit to theoretically calculated diode efficiency curves, and the diffusion length and metal layer thickness extracted. The extracted hole diffusion length ranged from 0.68 /spl mu/m to 1.46 /spl mu/m. The error for these values was /spl plusmn/15%. Additionally, we introduce a novel variation of the planar technique. This \"planar mapping\" technique measures diffusion length along a linescan creating a map of diffusion length versus position. This map is overlaid onto the EBIC image of the linescan, allowing direct visualization of the effect of crystal defects on minority carrier diffusion length. Diffusion length maps of both n and p-type 6H SiC show that large micropipe defects severely limit the minority carrier diffusion length, reducing it well below 0.1 /spl mu/m inside large defects.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127876172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654297
J. Rand, Y. Bai, J.C. Checchi, J. Culik, D. H. Ford, C. L. Kendall, P. Sims, R. Hall, A. Barnett
AstroPower is developing a manufacturing process for Silicon-Film/sup (TM)/ solar cell production under an NREL-administered PVMaT cost-share program. Progress in improving efficiencies and increasing the size and production volume of Silicon-Film/sup (TM/) solar cells over the past year are discussed. Future concepts and goals for the Silicon-Film/sup (TM)/ process are also discussed.
{"title":"Large-area Silicon-Film/sup (TM)/ manufacturing under the PVMaT program","authors":"J. Rand, Y. Bai, J.C. Checchi, J. Culik, D. H. Ford, C. L. Kendall, P. Sims, R. Hall, A. Barnett","doi":"10.1109/PVSC.1997.654297","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654297","url":null,"abstract":"AstroPower is developing a manufacturing process for Silicon-Film/sup (TM)/ solar cell production under an NREL-administered PVMaT cost-share program. Progress in improving efficiencies and increasing the size and production volume of Silicon-Film/sup (TM/) solar cells over the past year are discussed. Future concepts and goals for the Silicon-Film/sup (TM)/ process are also discussed.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122278372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654122
J. Tang, D. Mao, T. Ohno, V. Kaydanov, J. Trefny
The effects of Cu doping and post-deposition annealing on the properties of ZnTe thin films and CdS/CdTe solar cells with the ZnTe:Cu/Au back contact were investigated. The structural, compositional and electrical properties of ZnTe films were studied systematically using X-ray diffraction (XRD), electron microprobe analysis, atomic force microscopy (AFM), electrical resistivity and Hall effect measurements. ZnTe films with Cu concentrations of 1-6 at. % were used successfully as a back contact layer, providing fill factors over 0.70. The stability of CdTe/ZnTe/Au cells under accelerated temperature stress tests was investigated. I-V and C-V measurements, scanning Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy (XPS) were used to clarify possible degradation mechanisms. Significant Cu and Te diffusion into Au layer and Au diffusion into ZnTe were observed after annealing.
{"title":"Properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells","authors":"J. Tang, D. Mao, T. Ohno, V. Kaydanov, J. Trefny","doi":"10.1109/PVSC.1997.654122","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654122","url":null,"abstract":"The effects of Cu doping and post-deposition annealing on the properties of ZnTe thin films and CdS/CdTe solar cells with the ZnTe:Cu/Au back contact were investigated. The structural, compositional and electrical properties of ZnTe films were studied systematically using X-ray diffraction (XRD), electron microprobe analysis, atomic force microscopy (AFM), electrical resistivity and Hall effect measurements. ZnTe films with Cu concentrations of 1-6 at. % were used successfully as a back contact layer, providing fill factors over 0.70. The stability of CdTe/ZnTe/Au cells under accelerated temperature stress tests was investigated. I-V and C-V measurements, scanning Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy (XPS) were used to clarify possible degradation mechanisms. Significant Cu and Te diffusion into Au layer and Au diffusion into ZnTe were observed after annealing.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"34 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132132951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654150
W. Gross, J. Zettner, H. Scheuerpflug, T. Hierl, M. Schulz, F. Karg
Thermal imaging by an infrared camera is proposed to localize material defects in solar cell modules. The method is demonstrated on two CuInSe/sub 2/ minimodules consisting of 5 and 9 solar cells, respectively. Compared to the optical beam induced current (OBIC) method, the new thermosensoric defect localization (TDL) method is highly sensitive in solar modules and suitable for fabrication control. Shunts in the diode junction and series resistance in the semiconductor layer or the top contact may be differentiated.
{"title":"Thermosensoric localization of defects in CIS solar modules","authors":"W. Gross, J. Zettner, H. Scheuerpflug, T. Hierl, M. Schulz, F. Karg","doi":"10.1109/PVSC.1997.654150","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654150","url":null,"abstract":"Thermal imaging by an infrared camera is proposed to localize material defects in solar cell modules. The method is demonstrated on two CuInSe/sub 2/ minimodules consisting of 5 and 9 solar cells, respectively. Compared to the optical beam induced current (OBIC) method, the new thermosensoric defect localization (TDL) method is highly sensitive in solar modules and suitable for fabrication control. Shunts in the diode junction and series resistance in the semiconductor layer or the top contact may be differentiated.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132457900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654061
C. J. Bruno, M.G. Martinez Bogado, J. Plá, J. C. Durán
A new simple method for the determination of the solar cell minority carrier lifetime (/spl tau/), based on a biased OCVD technique, is analyzed. In this case, the excitation is given by a pulsed light source (time dependent contribution) plus a continuous illumination (continuous forward bias). Under appropriate conditions, this configuration produces an exponential decay with a time constant which depends on the bias. This constant decreases monotonously as a function of bias and allows one to determine an effective /spl tau/ for the base region. Inexpensive test equipment has been developed which basically consists of two sets of high-efficiency GaAs LEDs, which provide both light contributions. Measurements have been performed on crystalline silicon solar cells elaborated in the Argentine Atomic Energy Commission. Experimental results show good agreement with the theoretical model and with numerical PC-1D simulations.
{"title":"A new method for the determination of the minority carrier lifetime based on a biased OCVD technique [solar cells]","authors":"C. J. Bruno, M.G. Martinez Bogado, J. Plá, J. C. Durán","doi":"10.1109/PVSC.1997.654061","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654061","url":null,"abstract":"A new simple method for the determination of the solar cell minority carrier lifetime (/spl tau/), based on a biased OCVD technique, is analyzed. In this case, the excitation is given by a pulsed light source (time dependent contribution) plus a continuous illumination (continuous forward bias). Under appropriate conditions, this configuration produces an exponential decay with a time constant which depends on the bias. This constant decreases monotonously as a function of bias and allows one to determine an effective /spl tau/ for the base region. Inexpensive test equipment has been developed which basically consists of two sets of high-efficiency GaAs LEDs, which provide both light contributions. Measurements have been performed on crystalline silicon solar cells elaborated in the Argentine Atomic Energy Commission. Experimental results show good agreement with the theoretical model and with numerical PC-1D simulations.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130285706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654144
R. Ahrenkiel, S. P. Ahrenkiel, M. Al‐Jassim, R. Venkatasubramanian
As germanium is closed lattice matched to GaAs, it a suitable substrate for epitaxial growth. In the quest for inexpensive substrates, thin-film Ge grown on glass is an attractive candidate if suitable grain growth can be achieved. Here we describe Ge films that are deposited by an e-beam evaporator on glass and are approximately 2000 /spl Aring/ thick. The films were annealed at 500/spl deg/C and 600/spl deg/C to improve the quality of the material. The growth was done in three steps with 1000 /spl Aring/ of Ge, 70 /spl Aring/ of Sb, and followed by another 1000 /spl Aring/ of Ge. Sb is an n-type dopant in Ge and is included to enhance grain growth. The best films contained the Sb layer and hole concentrations between 1.4/spl times/10/sup 15/ to 1.6/spl times/10/sup 17/ cm/sup -3/. The largest hole mobility measured was 30.6 cm/sup 2//Vs in the 1.4/spl times/10/sup 15/ p-type sample. The electron lifetime was measured by ultra-high frequency photoconductive decay and the best lifetimes were in the 30- to 40-ns range. Scanning-electron microscope and transmission-electron microscope studies indicated a polycrystalline grain structure with grain size comparable to the film thickness.
{"title":"Electronic and mechanical properties of Ge films grown on glass substrates","authors":"R. Ahrenkiel, S. P. Ahrenkiel, M. Al‐Jassim, R. Venkatasubramanian","doi":"10.1109/PVSC.1997.654144","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654144","url":null,"abstract":"As germanium is closed lattice matched to GaAs, it a suitable substrate for epitaxial growth. In the quest for inexpensive substrates, thin-film Ge grown on glass is an attractive candidate if suitable grain growth can be achieved. Here we describe Ge films that are deposited by an e-beam evaporator on glass and are approximately 2000 /spl Aring/ thick. The films were annealed at 500/spl deg/C and 600/spl deg/C to improve the quality of the material. The growth was done in three steps with 1000 /spl Aring/ of Ge, 70 /spl Aring/ of Sb, and followed by another 1000 /spl Aring/ of Ge. Sb is an n-type dopant in Ge and is included to enhance grain growth. The best films contained the Sb layer and hole concentrations between 1.4/spl times/10/sup 15/ to 1.6/spl times/10/sup 17/ cm/sup -3/. The largest hole mobility measured was 30.6 cm/sup 2//Vs in the 1.4/spl times/10/sup 15/ p-type sample. The electron lifetime was measured by ultra-high frequency photoconductive decay and the best lifetimes were in the 30- to 40-ns range. Scanning-electron microscope and transmission-electron microscope studies indicated a polycrystalline grain structure with grain size comparable to the film thickness.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131151957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654148
F. Hasoon, M. Al‐Jassim, A. Swartzlander, P. Sheldon, A. Al-Douri, A. Alnajjar
The morphology and microstructure of cadmium sulfide (CdS) thin films are a major concern in the fabrication process of CdTe solar cells. In this work, we investigate the morphology and microstructure of chemical-bath-deposited CdS in order to better understand the growth conditions that give rise to films for optimum device performance. The film morphology was investigated by field-emission, high-resolution scanning electron microscopy (SEM). The film microstructure was studied by transmission electron microscopy (TEM), while the film's chemistry was investigated by Auger electron spectroscopy (AES). All films examined exhibited pinholes and discontinuities varying in size and density. This may have a significant impact on cell performance by providing shunt paths between the CdTe and the SnO/sub 2/. Additionally, the CdS films are heavily faulted, which may partially explain why a high density of planar defects is observed in the CdTe/CdS interface region.
{"title":"The morphology of CdS thin films deposited on SnO/sub 2/-coated glass substrates [for solar cells]","authors":"F. Hasoon, M. Al‐Jassim, A. Swartzlander, P. Sheldon, A. Al-Douri, A. Alnajjar","doi":"10.1109/PVSC.1997.654148","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654148","url":null,"abstract":"The morphology and microstructure of cadmium sulfide (CdS) thin films are a major concern in the fabrication process of CdTe solar cells. In this work, we investigate the morphology and microstructure of chemical-bath-deposited CdS in order to better understand the growth conditions that give rise to films for optimum device performance. The film morphology was investigated by field-emission, high-resolution scanning electron microscopy (SEM). The film microstructure was studied by transmission electron microscopy (TEM), while the film's chemistry was investigated by Auger electron spectroscopy (AES). All films examined exhibited pinholes and discontinuities varying in size and density. This may have a significant impact on cell performance by providing shunt paths between the CdTe and the SnO/sub 2/. Additionally, the CdS films are heavily faulted, which may partially explain why a high density of planar defects is observed in the CdTe/CdS interface region.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130853203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654108
R. Bhatt, H. Sankaranarayanan, C. Ferekides, D. Morel
High electronic quality undoped ZnO deposited by reactive sputtering has been developed for use as the buffer layer in CuIn/sub x/Ga/sub 1-x/Se/sub 2/ solar cells. Growth mechanisms are shown to differ from those resulting from conventional sputtering with ZnO targets. Film resistivity can be varied from 10/sup -2/ /spl rho/-cm to unmeasurable by variation of the growth parameters. Mobilities of films grown at substrate temperatures of 200/spl deg/C are in the range 25-30 cm/sup 2//V-s. Annealing at 325/spl deg/C increases mobilities to the 35-40 cm/sup 2//V-s range. The resulting resistivity, however, is dominated by the resulting carrier concentration which is controlled by oxygen vacancies. Devices fabricated with reactively sputtered buffer layers have matched the performance of the best literature results.
{"title":"The dependence of reactively sputtered ZnO electronic properties on growth parameters for use as buffer layers in CuIn/sub x/Ga/sub 1-x/Se/sub 2/ solar cells","authors":"R. Bhatt, H. Sankaranarayanan, C. Ferekides, D. Morel","doi":"10.1109/PVSC.1997.654108","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654108","url":null,"abstract":"High electronic quality undoped ZnO deposited by reactive sputtering has been developed for use as the buffer layer in CuIn/sub x/Ga/sub 1-x/Se/sub 2/ solar cells. Growth mechanisms are shown to differ from those resulting from conventional sputtering with ZnO targets. Film resistivity can be varied from 10/sup -2/ /spl rho/-cm to unmeasurable by variation of the growth parameters. Mobilities of films grown at substrate temperatures of 200/spl deg/C are in the range 25-30 cm/sup 2//V-s. Annealing at 325/spl deg/C increases mobilities to the 35-40 cm/sup 2//V-s range. The resulting resistivity, however, is dominated by the resulting carrier concentration which is controlled by oxygen vacancies. Devices fabricated with reactively sputtered buffer layers have matched the performance of the best literature results.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"36 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133411892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654266
G. Crotty, P. Verlinden, M. Cudzinovic, R. M. Swanson, R. Crane
In this paper, the authors report on the development of high-efficiency silicon solar cells designed specifically for space applications. The cells are the 100 /spl mu/m thin N/sup +/-P-P/sup +/ and are 2/spl times/4 cm in size. The front side surface is textured with inverted pyramids and received a double layer anti-reflection coating (ARC). They also have a back surface field (BSF) and a back surface reflector (BSR). Both front and back diffusions are optimized for radiation hardness. The best beginning of life (BOL) efficiencies of these thin (100 /spl mu/m) 2 cm/spl times/4 cm cells have been measured At JPL to be 18.3%. The best end of life (EOL) efficiencies after 1 MeV 1E15 electrons is 12.1%.
{"title":"18.3% efficient silicon solar cells for space applications","authors":"G. Crotty, P. Verlinden, M. Cudzinovic, R. M. Swanson, R. Crane","doi":"10.1109/PVSC.1997.654266","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654266","url":null,"abstract":"In this paper, the authors report on the development of high-efficiency silicon solar cells designed specifically for space applications. The cells are the 100 /spl mu/m thin N/sup +/-P-P/sup +/ and are 2/spl times/4 cm in size. The front side surface is textured with inverted pyramids and received a double layer anti-reflection coating (ARC). They also have a back surface field (BSF) and a back surface reflector (BSR). Both front and back diffusions are optimized for radiation hardness. The best beginning of life (BOL) efficiencies of these thin (100 /spl mu/m) 2 cm/spl times/4 cm cells have been measured At JPL to be 18.3%. The best end of life (EOL) efficiencies after 1 MeV 1E15 electrons is 12.1%.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133122142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654094
K. Kushiya, M. Tachiyuki, T. Kase, Y. Nagoya, T. Miura, D. Okumura, M. Satoh, I. Sugiyama, O. Yamase
In order to explain the observations on the post-deposition light soaking and understand this unique and valuable effect, a model is proposed and confirmed to work well. Based on the model, released H/sub 2/O molecules through the dehydration of Zn(OH)/sub 2/ in the Zn(O,S,OH)/sub x/ buffer during the light soaking is considered as a major player to affect the form factor (FF). The most striking result in this study is the post-deposition light soaking effect can be controlled from reversible to irreversible by adjusting the light soaking conditions. Approach to reduce the Zn(OH)/sub 2/ concentration in the buffer contributes to make a better p-n heterojunction and improve the yield.
{"title":"Improved FF of CIGS thin-film mini-modules with Zn(O,S,OH)/sub x/ buffer by post-depostion light soaking","authors":"K. Kushiya, M. Tachiyuki, T. Kase, Y. Nagoya, T. Miura, D. Okumura, M. Satoh, I. Sugiyama, O. Yamase","doi":"10.1109/PVSC.1997.654094","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654094","url":null,"abstract":"In order to explain the observations on the post-deposition light soaking and understand this unique and valuable effect, a model is proposed and confirmed to work well. Based on the model, released H/sub 2/O molecules through the dehydration of Zn(OH)/sub 2/ in the Zn(O,S,OH)/sub x/ buffer during the light soaking is considered as a major player to affect the form factor (FF). The most striking result in this study is the post-deposition light soaking effect can be controlled from reversible to irreversible by adjusting the light soaking conditions. Approach to reduce the Zn(OH)/sub 2/ concentration in the buffer contributes to make a better p-n heterojunction and improve the yield.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127393628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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