Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.653939
R. Ahrenkiel, S. Johnston
Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work shows that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.
{"title":"Contactless measurement of recombination lifetime in photovoltaic materials","authors":"R. Ahrenkiel, S. Johnston","doi":"10.1109/PVSC.1997.653939","DOIUrl":"https://doi.org/10.1109/PVSC.1997.653939","url":null,"abstract":"Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work shows that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115346785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654208
S. Ringel, R. Sieg, S. Ting, E. Fitzgerald
Elimination of anti-phase domains (APDs), threading dislocations and uncontrolled interface diffusion are critical considerations for achieving maximum design flexibility and high efficiency in multi-bandgap III-V solar cells on Ge. In this paper, we identify critical growth steps to eliminate each of these problems and present an optimum molecular beam epitaxy (MBE) growth procedure which yields APD-free, near-dislocation-free GaAs/Ge with greatly suppressed interdiffusion in both the GaAs overlayer and Ge substrate. For solid source MBE, elimination of APDs requires a double-stepped, clean Ge surface and a prelayer consisting of a complete monolayer of either As or Ga. Correct conditions can be observed and maintained by real-time in-situ monitoring to ensure reproducibility. Initiating growth at low temperature with migration enhanced epitaxy virtually eliminates Ge diffusion into GaAs and Ga diffusion into Ge, while As diffusion into Ge is substantially suppressed.
{"title":"Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications","authors":"S. Ringel, R. Sieg, S. Ting, E. Fitzgerald","doi":"10.1109/PVSC.1997.654208","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654208","url":null,"abstract":"Elimination of anti-phase domains (APDs), threading dislocations and uncontrolled interface diffusion are critical considerations for achieving maximum design flexibility and high efficiency in multi-bandgap III-V solar cells on Ge. In this paper, we identify critical growth steps to eliminate each of these problems and present an optimum molecular beam epitaxy (MBE) growth procedure which yields APD-free, near-dislocation-free GaAs/Ge with greatly suppressed interdiffusion in both the GaAs overlayer and Ge substrate. For solid source MBE, elimination of APDs requires a double-stepped, clean Ge surface and a prelayer consisting of a complete monolayer of either As or Ga. Correct conditions can be observed and maintained by real-time in-situ monitoring to ensure reproducibility. Initiating growth at low temperature with migration enhanced epitaxy virtually eliminates Ge diffusion into GaAs and Ga diffusion into Ge, while As diffusion into Ge is substantially suppressed.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115485035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.653914
J. Schmidt, A. Aberle, R. Hezel
In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 /spl Omega/cm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.
{"title":"Investigation of carrier lifetime instabilities in Cz-grown silicon","authors":"J. Schmidt, A. Aberle, R. Hezel","doi":"10.1109/PVSC.1997.653914","DOIUrl":"https://doi.org/10.1109/PVSC.1997.653914","url":null,"abstract":"In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 /spl Omega/cm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114905289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654053
R. Ludemann, S. Schaefer, C. Schule, C. Hebling
A dry-chemical solar cell process has been developed by substituting conventional wet etching steps by reactive ion etching. The performance of mc-Si solar cells that have been made by this new technology is comparable to that of conventionally processed cells. Thin-film solar cells have been prepared by applying zone melting recrystallisation of CVD-grown, highly doped p/sup +/-Si layers, that were used as seeding layers for the growth of the active Si-layers. Graphite with two kinds of encapsulation have been used as a foreign substrate for the silicon deposition: (a) covered with conducting SiC, the graphite acts as base contact of the cells; and (b) graphite encapsulated with insulating SiC- and SiO/sub 2//SiN/SiO/sub 2/-layers (ONO) leads to solar cells on insulating foreign substrates, with front side base contact. The graphite/SiC/Si layer system was developed by ASE; ONO deposition and recrystallisation were realised at Fraunhofer ISE. Applying the authors' dry solar cell technology, conversion efficiencies up to 11% were achieved.
{"title":"Dry processing of mc-silicon thin-film solar cells on foreign substrates leading to 11% efficiency","authors":"R. Ludemann, S. Schaefer, C. Schule, C. Hebling","doi":"10.1109/PVSC.1997.654053","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654053","url":null,"abstract":"A dry-chemical solar cell process has been developed by substituting conventional wet etching steps by reactive ion etching. The performance of mc-Si solar cells that have been made by this new technology is comparable to that of conventionally processed cells. Thin-film solar cells have been prepared by applying zone melting recrystallisation of CVD-grown, highly doped p/sup +/-Si layers, that were used as seeding layers for the growth of the active Si-layers. Graphite with two kinds of encapsulation have been used as a foreign substrate for the silicon deposition: (a) covered with conducting SiC, the graphite acts as base contact of the cells; and (b) graphite encapsulated with insulating SiC- and SiO/sub 2//SiN/SiO/sub 2/-layers (ONO) leads to solar cells on insulating foreign substrates, with front side base contact. The graphite/SiC/Si layer system was developed by ASE; ONO deposition and recrystallisation were realised at Fraunhofer ISE. Applying the authors' dry solar cell technology, conversion efficiencies up to 11% were achieved.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116023177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654241
V. Andreev, V. Khvostikov, V. Larionov, V. Rumyantsev, S. Sorokina, M. Shvarts, V. I. Vasil’ev, A. Vlasov
Computer modelling of a tandem thermophotovoltaic (TPV) system has been carried out. The monolithic GaSb/InGaAsSb tandem TPV devices have been designed and fabricated by LPE. The cell consists of: nGaSb (substrate); (n-p)In/sub x/Ga/sub 1-x/As/sub y/Sb/sub 1-y/ (E/sub g//spl ap/0.56 eV, bottom cell); p/sup ++/-n/sup ++/GaSb (tunnel junction); (n-p)-GaSb (top cell). External quantum yields of 80% at 800-1600 nm wavelength (top cell) and of about 75% at 1800-2100 nm (bottom cell) have been measured. V/sub OC/=0.61 V and FF=0.75 were achieved in a tandem cell at current density of 0.7 A/cm/sup 2/.
{"title":"Tandem GaSb/InGaAsSb thermophotovoltaic cells","authors":"V. Andreev, V. Khvostikov, V. Larionov, V. Rumyantsev, S. Sorokina, M. Shvarts, V. I. Vasil’ev, A. Vlasov","doi":"10.1109/PVSC.1997.654241","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654241","url":null,"abstract":"Computer modelling of a tandem thermophotovoltaic (TPV) system has been carried out. The monolithic GaSb/InGaAsSb tandem TPV devices have been designed and fabricated by LPE. The cell consists of: nGaSb (substrate); (n-p)In/sub x/Ga/sub 1-x/As/sub y/Sb/sub 1-y/ (E/sub g//spl ap/0.56 eV, bottom cell); p/sup ++/-n/sup ++/GaSb (tunnel junction); (n-p)-GaSb (top cell). External quantum yields of 80% at 800-1600 nm wavelength (top cell) and of about 75% at 1800-2100 nm (bottom cell) have been measured. V/sub OC/=0.61 V and FF=0.75 were achieved in a tandem cell at current density of 0.7 A/cm/sup 2/.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121904022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654145
Sung Chan Park, B. Han, J. Ahn, B. Ahn, Donghwan Kim
To increase grain size, solution-grown CdS films were annealed at 560/spl deg/C in a (CdCl/sub 2/+CdS) atmosphere, instead of CdCl/sub 2/ only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near E/sub g/, compared to that of CdS films annealed at 400/spl deg/C for 30 min in H/sub 2/. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl/sub 2/+CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface.
{"title":"Effect of CdS annealing in (CdCl/sub 2/+CdS) atmosphere on CdTe cells","authors":"Sung Chan Park, B. Han, J. Ahn, B. Ahn, Donghwan Kim","doi":"10.1109/PVSC.1997.654145","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654145","url":null,"abstract":"To increase grain size, solution-grown CdS films were annealed at 560/spl deg/C in a (CdCl/sub 2/+CdS) atmosphere, instead of CdCl/sub 2/ only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near E/sub g/, compared to that of CdS films annealed at 400/spl deg/C for 30 min in H/sub 2/. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl/sub 2/+CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"254 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120881853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.653921
K. Fukui, Y. Inomata, K. Shirasawa
We have developed a new surface texturing technique using a reactive ion etching (RIE) method for multicrystalline silicon (mc-Si) solar cells, which is expected to form a low reflectance surface on grains of various crystalline orientations. This surface texture has a cone shape, and aspect ratio and size of which can be easily controlled. We have optimized surface shape and emitter sheet resistance. The optimum emitter sheet resistance for RIE textured cell is higher than that for the usual cell. The high aspect ratio of the cone shape makes surface reflectance low, but the cell efficiency is not so good. There is an optimum aspect ratio because the emitter of cell with high aspect ratio surface has large saturation current and cell performance is decreased with aspect ratio. We have fabricated over 17% efficient large area (225 cm/sup 2/) mc-Si solar cell using this surface texturing technique and passivation schemes which is based on the silicon nitride film deposited by the plasma CVD method and hydrogen annealing at a high temperature.
{"title":"Surface texturing using reactive ion etching for multicrystalline silicon solar cells","authors":"K. Fukui, Y. Inomata, K. Shirasawa","doi":"10.1109/PVSC.1997.653921","DOIUrl":"https://doi.org/10.1109/PVSC.1997.653921","url":null,"abstract":"We have developed a new surface texturing technique using a reactive ion etching (RIE) method for multicrystalline silicon (mc-Si) solar cells, which is expected to form a low reflectance surface on grains of various crystalline orientations. This surface texture has a cone shape, and aspect ratio and size of which can be easily controlled. We have optimized surface shape and emitter sheet resistance. The optimum emitter sheet resistance for RIE textured cell is higher than that for the usual cell. The high aspect ratio of the cone shape makes surface reflectance low, but the cell efficiency is not so good. There is an optimum aspect ratio because the emitter of cell with high aspect ratio surface has large saturation current and cell performance is decreased with aspect ratio. We have fabricated over 17% efficient large area (225 cm/sup 2/) mc-Si solar cell using this surface texturing technique and passivation schemes which is based on the silicon nitride film deposited by the plasma CVD method and hydrogen annealing at a high temperature.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"2675 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127278632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654086
Z. T. Kuzinicki
The multiinterface concept seems allow a considerable increase of the present efficiency limit of Si solar cells. An experimental investigation of several types of multiinterface Si structures obtained, for example, by impurity implantation and adequate thermal treatment has been carried out. The most characteristic feature of the devices investigated concerns a buried amorphized substructure which is delimited at its front and back edges by a-Si/c-Si heterointerfaces. Electron microscope and X-ray studies show that these two phases are separated by a very sharp interface and a very thin c-Si transition zone with new crystalline properties. In this way, active substructures and active interfaces can be well-controlled by bandgap, defect and stress engineering. The results obtained indicate one of the possible ways towards the practical realization of improvements postulated by theory and simulations.
多界面的概念似乎允许相当大的提高目前的效率限制硅太阳能电池。实验研究了几种类型的多界面Si结构，例如通过杂质注入和适当的热处理获得的Si结构。所研究的器件最具特色的特征是埋置的非晶化子结构，其前后边缘由a- si /c-Si异质界面划分。电子显微镜和x射线研究表明，这两个相被一个非常锋利的界面和一个非常薄的c-Si过渡区分开，具有新的晶体性质。这样就可以通过带隙、缺陷和应力工程很好地控制活性子结构和活性界面。所得结果为实际实现理论和仿真所假定的改进提供了可能的途径之一。
{"title":"Multiinterface Si solar cells with active substructures and active interfaces","authors":"Z. T. Kuzinicki","doi":"10.1109/PVSC.1997.654086","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654086","url":null,"abstract":"The multiinterface concept seems allow a considerable increase of the present efficiency limit of Si solar cells. An experimental investigation of several types of multiinterface Si structures obtained, for example, by impurity implantation and adequate thermal treatment has been carried out. The most characteristic feature of the devices investigated concerns a buried amorphized substructure which is delimited at its front and back edges by a-Si/c-Si heterointerfaces. Electron microscope and X-ray studies show that these two phases are separated by a very sharp interface and a very thin c-Si transition zone with new crystalline properties. In this way, active substructures and active interfaces can be well-controlled by bandgap, defect and stress engineering. The results obtained indicate one of the possible ways towards the practical realization of improvements postulated by theory and simulations.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127495181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654127
F. Álvarez, N. Di Lalla, A. Lamagna
This article describes the elaboration process of thin films for CdS/CdTe solar cells using low cost materials and a very simple process. The device structure (SnO/sub 2/:F/CdS/CdTe/Cu/Au) is deposited on coverglass substrates. The crystal structure of the films were determined by X-ray diffraction analysis. The surface morphology and microstructure of both films were subsequently characterized using a conventional scanning electron microscopy (SEM) and an atomic force microscopy (AFM). An enlargement of the grain size structure is observed after the thermal annealing. Finally, the solar cells prepared using this process exhibited a short circuit current density of J/sub sc/=18 mA/cm/sup 2/, open circuit voltage of V/sub oc/=600 mV and efficiencies above 5% under AM 1 simulated solar illumination.
{"title":"Thin film CdS/CdTe solar cells prepared by electrodeposition using low cost materials","authors":"F. Álvarez, N. Di Lalla, A. Lamagna","doi":"10.1109/PVSC.1997.654127","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654127","url":null,"abstract":"This article describes the elaboration process of thin films for CdS/CdTe solar cells using low cost materials and a very simple process. The device structure (SnO/sub 2/:F/CdS/CdTe/Cu/Au) is deposited on coverglass substrates. The crystal structure of the films were determined by X-ray diffraction analysis. The surface morphology and microstructure of both films were subsequently characterized using a conventional scanning electron microscopy (SEM) and an atomic force microscopy (AFM). An enlargement of the grain size structure is observed after the thermal annealing. Finally, the solar cells prepared using this process exhibited a short circuit current density of J/sub sc/=18 mA/cm/sup 2/, open circuit voltage of V/sub oc/=600 mV and efficiencies above 5% under AM 1 simulated solar illumination.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129998270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654239
V. Andreev, V. Khvostikov, V. Rumyantsev, E. V. Paleeva, M. Shvarts
Monolithic two-junction two-terminal AlGaAs/GaAs solar cells were grown during two-stage liquid phase epitaxy. At the first stage the GaAs-based bottom subcell with a tunnel junction was grown on n-GaAs(Sn) substrate. Test samples of such a cell without layers of the tunnel junction and with thin enough p-Al/sub 0.9/Ga/sub 0.1/As window layer demonstrated the efficiencies of 27.5% (AM1.5D, 140 Suns) and of about 25% (AM1.5D, 1000-1500 Suns). At the second stage, the top AlGaAs subcell was grown. The following parameters have been measured in tandems: V/sub OC/=2.53 V, FF=0.80 at 50 Suns (AM0). An efficiency of 20.3% (AM0) has been achieved.
{"title":"Monolithic two-junction AlGaAs/GaAs solar cells","authors":"V. Andreev, V. Khvostikov, V. Rumyantsev, E. V. Paleeva, M. Shvarts","doi":"10.1109/PVSC.1997.654239","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654239","url":null,"abstract":"Monolithic two-junction two-terminal AlGaAs/GaAs solar cells were grown during two-stage liquid phase epitaxy. At the first stage the GaAs-based bottom subcell with a tunnel junction was grown on n-GaAs(Sn) substrate. Test samples of such a cell without layers of the tunnel junction and with thin enough p-Al/sub 0.9/Ga/sub 0.1/As window layer demonstrated the efficiencies of 27.5% (AM1.5D, 140 Suns) and of about 25% (AM1.5D, 1000-1500 Suns). At the second stage, the top AlGaAs subcell was grown. The following parameters have been measured in tandems: V/sub OC/=2.53 V, FF=0.80 at 50 Suns (AM0). An efficiency of 20.3% (AM0) has been achieved.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128908145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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