Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557314
O. Neagoe, M. Avram
The paper presents the project, fabrication and experimental results of a new dual-collector bipolar magnetotransistor. Two major operating principles such as the emitter injection modulation and the carrier deflection are reported a special design causes the variation of the device active area due to the carrier deflection in the base region so that a large collector current difference may result.
{"title":"A new bipolar magnetotransistor with combined phenomena of carrier deflection and emitter injection modulation","authors":"O. Neagoe, M. Avram","doi":"10.1109/SMICND.1996.557314","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557314","url":null,"abstract":"The paper presents the project, fabrication and experimental results of a new dual-collector bipolar magnetotransistor. Two major operating principles such as the emitter injection modulation and the carrier deflection are reported a special design causes the variation of the device active area due to the carrier deflection in the base region so that a large collector current difference may result.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130736210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557391
I. Grekhov, A.F. Shulekin, M. Vexler
Hot-electron Auger ionization in Al/tunnel-thin oxide/silicon structures was shown to be used most efficiently in the devices with high n-substrate doping (Nd) and/or relatively large insulator thickness. The structures with high Nd were also found to be quite appropriate for observation of electroluminescence.
{"title":"Optimization of the silicon-based tunnel MIS structures as hot electron injectors","authors":"I. Grekhov, A.F. Shulekin, M. Vexler","doi":"10.1109/SMICND.1996.557391","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557391","url":null,"abstract":"Hot-electron Auger ionization in Al/tunnel-thin oxide/silicon structures was shown to be used most efficiently in the devices with high n-substrate doping (Nd) and/or relatively large insulator thickness. The structures with high Nd were also found to be quite appropriate for observation of electroluminescence.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"41 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133833089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557463
E. Arushanov, E. Bucher, K. Friemelt, O. Kulikova, L. Kulyuk, A. Nateprov, A. Siminel
For the first time the photoluminescence of the tungsten disulphide 2H-polytype single crystals have been observed and the photoconductivity spectra in the region of indirect transition have been investigated. The analysis of the experimental data has been performed taking into account the band structure of 2H-WS/sub 2/ layered crystals.
{"title":"Photoconductivity, luminescence and optical absorption of WS/sub 2/ crystals","authors":"E. Arushanov, E. Bucher, K. Friemelt, O. Kulikova, L. Kulyuk, A. Nateprov, A. Siminel","doi":"10.1109/SMICND.1996.557463","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557463","url":null,"abstract":"For the first time the photoluminescence of the tungsten disulphide 2H-polytype single crystals have been observed and the photoconductivity spectra in the region of indirect transition have been investigated. The analysis of the experimental data has been performed taking into account the band structure of 2H-WS/sub 2/ layered crystals.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"253 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134324356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557410
F. Găiseanu, D. Kruger, J. Stoemenos, C. Dimitriadis, C. Postalache, H. Richter, W. Schroter, M. Seibt
TEM, spreading resistance and SIMS investigations of LP-CVD polysilicon layers deposited at 620/spl deg/C on a Si substrate, doped by P prediffusion at 900/spl deg/C and subsequently annealed at temperatures in the range 900/spl deg/C-1000/spl deg/C, allow the authors to propose a doping-restructuration mechanism based on the self-interstitial injection during the P diffusion.
{"title":"Doping-restructuration process during phosphorus diffusion in polysilicon layers on silicon","authors":"F. Găiseanu, D. Kruger, J. Stoemenos, C. Dimitriadis, C. Postalache, H. Richter, W. Schroter, M. Seibt","doi":"10.1109/SMICND.1996.557410","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557410","url":null,"abstract":"TEM, spreading resistance and SIMS investigations of LP-CVD polysilicon layers deposited at 620/spl deg/C on a Si substrate, doped by P prediffusion at 900/spl deg/C and subsequently annealed at temperatures in the range 900/spl deg/C-1000/spl deg/C, allow the authors to propose a doping-restructuration mechanism based on the self-interstitial injection during the P diffusion.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132764967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557443
A. Negoi, J. Zimmermann
An integrated circuit dedicated to the simulation of a charged particle in a semiconductor using the Monte Carlo method is presented. This circuit should be the basis building block of a semiconductor device hardware simulator. We detail the various phases of the physical processes involved and how to transfer them in terms of circuit architectures. The CAD tool used was Alliance 3.0. We present the very first practical realization based on a FPGA.
{"title":"Monte Carlo hardware simulator for electron dynamics in semiconductors","authors":"A. Negoi, J. Zimmermann","doi":"10.1109/SMICND.1996.557443","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557443","url":null,"abstract":"An integrated circuit dedicated to the simulation of a charged particle in a semiconductor using the Monte Carlo method is presented. This circuit should be the basis building block of a semiconductor device hardware simulator. We detail the various phases of the physical processes involved and how to transfer them in terms of circuit architectures. The CAD tool used was Alliance 3.0. We present the very first practical realization based on a FPGA.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115169860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557378
M. Badila, S. Negru, F. Mitu, G. Brezeanu, G. Dilimot, I. Enache
An integration technique for high frequency bipolar circuits is presented. A Gilbert cell and an amplifier with a bandwidth of 700 MHz and minimum 2 V supply voltage has been integrated. The circuits content npn transistors with 16 GHz cutoff frequency and BV/sub CBO/>15 V.
{"title":"Integration techniques for high frequency bipolar circuits","authors":"M. Badila, S. Negru, F. Mitu, G. Brezeanu, G. Dilimot, I. Enache","doi":"10.1109/SMICND.1996.557378","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557378","url":null,"abstract":"An integration technique for high frequency bipolar circuits is presented. A Gilbert cell and an amplifier with a bandwidth of 700 MHz and minimum 2 V supply voltage has been integrated. The circuits content npn transistors with 16 GHz cutoff frequency and BV/sub CBO/>15 V.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123487562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557414
L. Galateanu, M. Stoica, C. Bozdog, E. Popa, A. Stoica
The methods of achieving the needed reliability for the automotive rectifier CAN diodes are discussed. The RVT tool needed for investigation was found, a new stress relief shape was designed and IR and XR investigations were performed toward the complete elimination of the residual strain left behind the grinding and diffusion processes. An IR method of the rough surface layer characterization is for the first time employed and the optical configuration for XR experiments was improved in angular resolution.
{"title":"Stress and strain in automotive diodes-a RVT, IR and XR study","authors":"L. Galateanu, M. Stoica, C. Bozdog, E. Popa, A. Stoica","doi":"10.1109/SMICND.1996.557414","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557414","url":null,"abstract":"The methods of achieving the needed reliability for the automotive rectifier CAN diodes are discussed. The RVT tool needed for investigation was found, a new stress relief shape was designed and IR and XR investigations were performed toward the complete elimination of the residual strain left behind the grinding and diffusion processes. An IR method of the rough surface layer characterization is for the first time employed and the optical configuration for XR experiments was improved in angular resolution.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121238204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557384
M. Popescu, F. Sava, A. Lőrinczi, P. Koch, T. Gutberlet, W. Uebach, H. Bradaczek, E. Vateva, D. Nesheva
The structure and the thermal stability of amorphous Se/CdSe multilayers have been investigated by X-ray diffraction. The multilayers are stable up to 60/spl deg/C. During thermal treatment firstly hexagonal selenium and then hexagonal CdSe phase are gradually separated.
{"title":"Thermal stability of Se/CdSe multilayers","authors":"M. Popescu, F. Sava, A. Lőrinczi, P. Koch, T. Gutberlet, W. Uebach, H. Bradaczek, E. Vateva, D. Nesheva","doi":"10.1109/SMICND.1996.557384","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557384","url":null,"abstract":"The structure and the thermal stability of amorphous Se/CdSe multilayers have been investigated by X-ray diffraction. The multilayers are stable up to 60/spl deg/C. During thermal treatment firstly hexagonal selenium and then hexagonal CdSe phase are gradually separated.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121978809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557367
S. Sokolic, S. Amon
The modelling of the collector current and the base transit time in npn SiGe HBT is presented. The evaluation of minority electron concentration in the base and its dependence on doping concentration, temperature and Ge content is discussed in detail. It is shown that Ge-induced performance improvement of SiGe HBTs compared to Si BJTs is lowered at high doping concentrations in the base due to invalidity of Boltzmann statistics, which is more influential in SiGe due to lower hole effective mass.
{"title":"Modelling base transport properties of npn SiGe HBT","authors":"S. Sokolic, S. Amon","doi":"10.1109/SMICND.1996.557367","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557367","url":null,"abstract":"The modelling of the collector current and the base transit time in npn SiGe HBT is presented. The evaluation of minority electron concentration in the base and its dependence on doping concentration, temperature and Ge content is discussed in detail. It is shown that Ge-induced performance improvement of SiGe HBTs compared to Si BJTs is lowered at high doping concentrations in the base due to invalidity of Boltzmann statistics, which is more influential in SiGe due to lower hole effective mass.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131304587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557392
M. Iovu, A. Andriesh, S. Shutov, M. G. Bulgaru, M. Popescu, F. Sava, A. Lőrinczi
The chalcogenide glassy semiconductor As/sub 2/Se/sub 3/ doped with Mn, Dy and Sm presents practical interest for optoelectronic devices. Doping by metals influences electrical conductivity and photoelectric characteristics. The conductivity is significantly increased by addition of Mn and Dy impurities. All the dopants hamper the photoconductivity with exception of 0.5 at.% Dy, which generates a broad impurity band in the photoconductivity spectrum near 1.05 eV, ascribed to the presence of a small amount of finely dispersed crystalline phase.
{"title":"Electrical and photoelectrical properties of glassy As/sub 2/Se/sub 3/ doped with Mn, Dy and Sm","authors":"M. Iovu, A. Andriesh, S. Shutov, M. G. Bulgaru, M. Popescu, F. Sava, A. Lőrinczi","doi":"10.1109/SMICND.1996.557392","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557392","url":null,"abstract":"The chalcogenide glassy semiconductor As/sub 2/Se/sub 3/ doped with Mn, Dy and Sm presents practical interest for optoelectronic devices. Doping by metals influences electrical conductivity and photoelectric characteristics. The conductivity is significantly increased by addition of Mn and Dy impurities. All the dopants hamper the photoconductivity with exception of 0.5 at.% Dy, which generates a broad impurity band in the photoconductivity spectrum near 1.05 eV, ascribed to the presence of a small amount of finely dispersed crystalline phase.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129038260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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