Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557451
A. Nateprov, S. Radautsan, J. Schon, K. Kloc, H. Riazi-Nejad, E. Bucher
The ZnO/CdS/CuGaSe/sub 2/ single crystal solar cells with thermally evaporated CdS layers have been prepared. The cells with undoped and In-doped oxygen free buffer layers CdS had a low open-circuit voltages in comparision with chemically deposited CdS buffer layers. The strong oxygen influence on open-circuit voltage of devices was established. It is shown that using of oxygen during ZnO films preparation by rf-sputtering lead to high open circuit voltages for devices with thermal evaporated CdS buffer layers.
{"title":"ZnO/CdS/CuGaSe/sub 2/ single crystal solar cells","authors":"A. Nateprov, S. Radautsan, J. Schon, K. Kloc, H. Riazi-Nejad, E. Bucher","doi":"10.1109/SMICND.1996.557451","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557451","url":null,"abstract":"The ZnO/CdS/CuGaSe/sub 2/ single crystal solar cells with thermally evaporated CdS layers have been prepared. The cells with undoped and In-doped oxygen free buffer layers CdS had a low open-circuit voltages in comparision with chemically deposited CdS buffer layers. The strong oxygen influence on open-circuit voltage of devices was established. It is shown that using of oxygen during ZnO films preparation by rf-sputtering lead to high open circuit voltages for devices with thermal evaporated CdS buffer layers.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117181825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557398
N. Syrbu, V. E. Tazlavanu, R. Creţu
In this work, the wave-length derivative reflection (WDR) spectra of CuInS/sub 2/ (CIS) crystals have been investigated in the region of A, B and C series. The n=1, n=2 and n=3 states are determined and contours of exciton lines (n=1) are calculated, The parameters of excitons and bands have been determined for the region of band gap minimum.
{"title":"Energy band structure of CuInS/sub 2/ crystals","authors":"N. Syrbu, V. E. Tazlavanu, R. Creţu","doi":"10.1109/SMICND.1996.557398","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557398","url":null,"abstract":"In this work, the wave-length derivative reflection (WDR) spectra of CuInS/sub 2/ (CIS) crystals have been investigated in the region of A, B and C series. The n=1, n=2 and n=3 states are determined and contours of exciton lines (n=1) are calculated, The parameters of excitons and bands have been determined for the region of band gap minimum.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115319387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557395
M. Zivanov, L. Zivanov, J. Jovović
In this paper was calculated the position of Fermi energy level and effective mass of electron in n-type GaAs as a function of donor concentrations in the range from 10/sup 17/ to 10/sup 21/ cm/sup -3/, taking into account upper minima in conduction band at 300 K. Calculations show that is necessary taken besides /spl Gamma/ and L minimum for concentrations greater than 10/sup 19/ cm/sup -3/ and all three minima (/spl Gamma/, L and X) for concentrations greater than 10/sup 20/ cm/sup -3/.
{"title":"The influence of higher minima on physical parameters in ultra heavily doped n-type GaAs","authors":"M. Zivanov, L. Zivanov, J. Jovović","doi":"10.1109/SMICND.1996.557395","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557395","url":null,"abstract":"In this paper was calculated the position of Fermi energy level and effective mass of electron in n-type GaAs as a function of donor concentrations in the range from 10/sup 17/ to 10/sup 21/ cm/sup -3/, taking into account upper minima in conduction band at 300 K. Calculations show that is necessary taken besides /spl Gamma/ and L minimum for concentrations greater than 10/sup 19/ cm/sup -3/ and all three minima (/spl Gamma/, L and X) for concentrations greater than 10/sup 20/ cm/sup -3/.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128723536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557409
V. Vanca, Z. Schlett, M. Dinu, V. Enache
In order to improve the axial distribution for the main impurities, oxygen and carbon concentration, in Cz silicon single crystals, the authors have established a computer numerical method to reduce the scattering area for values along the ingot by using different pulling rates.
{"title":"Distribution improvement for main impurity, oxygen and carbon concentration in Czochralski silicon single crystals","authors":"V. Vanca, Z. Schlett, M. Dinu, V. Enache","doi":"10.1109/SMICND.1996.557409","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557409","url":null,"abstract":"In order to improve the axial distribution for the main impurities, oxygen and carbon concentration, in Cz silicon single crystals, the authors have established a computer numerical method to reduce the scattering area for values along the ingot by using different pulling rates.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116139342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557465
D. Dobrescu, A. Rusu
Based on experimental observation, a new mathematical model is made for explaining the carrier lifetime versus temperature dependence in silicon solar cells manufactured on p-type material with one dominant acceptor trap energy level, situated in the lower part of the forbidden band. This model explains the behaviour of the lifetime taking into account the SRH model for the lifetime and the physical parameters temperature dependencies.
{"title":"Temperature study of the carrier lifetime in solar cells with one dominant trap energy level","authors":"D. Dobrescu, A. Rusu","doi":"10.1109/SMICND.1996.557465","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557465","url":null,"abstract":"Based on experimental observation, a new mathematical model is made for explaining the carrier lifetime versus temperature dependence in silicon solar cells manufactured on p-type material with one dominant acceptor trap energy level, situated in the lower part of the forbidden band. This model explains the behaviour of the lifetime taking into account the SRH model for the lifetime and the physical parameters temperature dependencies.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125815825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557407
M. Modreanu, P. Cosmin, S. Cosmin, C. Cobianu, C. Dunare
Several type of films obtained by the Chemical Vapour Deposition technique, such as silicon dioxide, phosphosilicate glass, silicon oxynitride, silicon nitride and polysilicon, were investigated. A calibration technique for the sample weighing method comprising film density evaluation was developed. The sample weighing method was found to be a fast, precise and non-destructive method for thin film thickness evaluation.
{"title":"Measurement of CVD thin films thickness by sample weighing method","authors":"M. Modreanu, P. Cosmin, S. Cosmin, C. Cobianu, C. Dunare","doi":"10.1109/SMICND.1996.557407","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557407","url":null,"abstract":"Several type of films obtained by the Chemical Vapour Deposition technique, such as silicon dioxide, phosphosilicate glass, silicon oxynitride, silicon nitride and polysilicon, were investigated. A calibration technique for the sample weighing method comprising film density evaluation was developed. The sample weighing method was found to be a fast, precise and non-destructive method for thin film thickness evaluation.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125932110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557441
S.-M. Popescu, S. Spanoche
This paper describes some theoretical aspects of the time domain simulation in the presence of noise sources. It is demonstrated that the commonly used techniques are giving distorted results when using adaptive timestep. A correct method of noise modelling is explained. Based on this method, a practical implementation of a simulator capable of carrying out accurate transient analysis with noise is announced.
{"title":"A noise modelling approach for accurate time domain analysis","authors":"S.-M. Popescu, S. Spanoche","doi":"10.1109/SMICND.1996.557441","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557441","url":null,"abstract":"This paper describes some theoretical aspects of the time domain simulation in the presence of noise sources. It is demonstrated that the commonly used techniques are giving distorted results when using adaptive timestep. A correct method of noise modelling is explained. Based on this method, a practical implementation of a simulator capable of carrying out accurate transient analysis with noise is announced.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127090393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557412
C.W. Wang, T. Sheu, Y. Su, M. Yokoyama
The purpose of this work is to study the relationship between the oxygen-rich concentration and brightness degradation in ZnS:TbOF green A.C. thin-film electroluminescent devices. The results showed that higher oxygen-content (O/Tb>1) in the phosphor layer not only created the deep hole traps (E/sub t1/ and/or E/sub t2/) but also yielded the EL devices with moisture. As a result, lower brightness was obtained.
{"title":"Deep traps and brightness degradation for oxygen-rich concentration in ZnS:TbOF thin film electroluminescent devices","authors":"C.W. Wang, T. Sheu, Y. Su, M. Yokoyama","doi":"10.1109/SMICND.1996.557412","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557412","url":null,"abstract":"The purpose of this work is to study the relationship between the oxygen-rich concentration and brightness degradation in ZnS:TbOF green A.C. thin-film electroluminescent devices. The results showed that higher oxygen-content (O/Tb>1) in the phosphor layer not only created the deep hole traps (E/sub t1/ and/or E/sub t2/) but also yielded the EL devices with moisture. As a result, lower brightness was obtained.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126850782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557393
A. Nikorich, V. Kantser, V. Nikorich, D. Constantinescu
The results of the I-V characteristics (IVC) investigation on PbTe semiconductor samples in the temperature range 67-100 K are given. IVC was found to be N-shaped, and at temperatures below 77 K the electric current oscillations through the sample were observed.
{"title":"Non-linear transport properties of PbTe semiconductors","authors":"A. Nikorich, V. Kantser, V. Nikorich, D. Constantinescu","doi":"10.1109/SMICND.1996.557393","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557393","url":null,"abstract":"The results of the I-V characteristics (IVC) investigation on PbTe semiconductor samples in the temperature range 67-100 K are given. IVC was found to be N-shaped, and at temperatures below 77 K the electric current oscillations through the sample were observed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1978 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128222397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557323
B. Arion, Y. Ni, F. Devos
This paper presents an analog VLSI retina-based passive stereoscopic system for real-time obstacle detection in automobile context. The system is built of two analog visual feature extraction retinas with lens connected to a PC via a Parallel Port interface in order to generate control signals and to display the computed depth map.
{"title":"An analog CMOS passive stereoscopic system for automated vehicle guidance","authors":"B. Arion, Y. Ni, F. Devos","doi":"10.1109/SMICND.1996.557323","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557323","url":null,"abstract":"This paper presents an analog VLSI retina-based passive stereoscopic system for real-time obstacle detection in automobile context. The system is built of two analog visual feature extraction retinas with lens connected to a PC via a Parallel Port interface in order to generate control signals and to display the computed depth map.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126972009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：