Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920839
A. H. Afifah Maheran, Z. A. Noor Faizah, P. Menon, I. Ahmad, P. Apte, T. Kalaivani, F. Salehuddin
The evolution of MOSFET technology has been governed solely by device scaling, delivered an ever-increasing transistor density through Moore's Law. In this paper, the design, fabrication and characterization of 32nm HfO2/TiSi2 PMOS device is presented; replacing the conventional SiO2 dielectric and Poly-Silicon. The fabrication and simulation of PMOS transistor is performed via Virtual Wafer Fabrication (VWF) Silvaco TCAD Tools namely ATHENA and ATLAS. Taguchi L9 Orthogonal method is then applied to this experiment for optimization of threshold voltage (VTH) and leakage current (IOFF). The simulation result shows that the optimal value of VTH and IOFF which are 0.1030075V and 3.4264075×10-12A/um respectively are well within ITRS prediction.
{"title":"Statistical process modelling for 32nm high-K/metal gate PMOS device","authors":"A. H. Afifah Maheran, Z. A. Noor Faizah, P. Menon, I. Ahmad, P. Apte, T. Kalaivani, F. Salehuddin","doi":"10.1109/SMELEC.2014.6920839","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920839","url":null,"abstract":"The evolution of MOSFET technology has been governed solely by device scaling, delivered an ever-increasing transistor density through Moore's Law. In this paper, the design, fabrication and characterization of 32nm HfO<sub>2</sub>/TiSi<sub>2</sub> PMOS device is presented; replacing the conventional SiO<sub>2</sub> dielectric and Poly-Silicon. The fabrication and simulation of PMOS transistor is performed via Virtual Wafer Fabrication (VWF) Silvaco TCAD Tools namely ATHENA and ATLAS. Taguchi L9 Orthogonal method is then applied to this experiment for optimization of threshold voltage (V<sub>TH</sub>) and leakage current (I<sub>OFF</sub>). The simulation result shows that the optimal value of V<sub>TH</sub> and I<sub>OFF</sub> which are 0.1030075V and 3.4264075×10<sup>-12</sup>A/um respectively are well within ITRS prediction.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121018044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920915
A. Shafura, I. Saurdi, N. Azhar, M. H. Mamat, M. Uzer, M. Rusop, A. Shuhaimi
Nanostructured Aluminium (Al) doped zinc oxide (ZnO) was prepared using sol-gel spin-coating method. These films were tested under different exposure of oxygen flow rates at room temperature with bias voltage applied at 5 V. The structural properties were characterized using Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The fesem image revealed the surface morphology of nanostructured ZnO. The diameters size of nanostructured Al-doped ZnO thin film was observed in range of 16-46 nm. These thin films were tested for oxygen-sensing characteristic by varying the gas flow rates at room temperature. The nanostructured Al-doped ZnO-based gas sensor exhibited good sensitivity at low flow rates of oxygen exposure.
{"title":"Nanostructured Al-doped ZnO-based gas sensor prepared using sol-gel spin-coating method","authors":"A. Shafura, I. Saurdi, N. Azhar, M. H. Mamat, M. Uzer, M. Rusop, A. Shuhaimi","doi":"10.1109/SMELEC.2014.6920915","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920915","url":null,"abstract":"Nanostructured Aluminium (Al) doped zinc oxide (ZnO) was prepared using sol-gel spin-coating method. These films were tested under different exposure of oxygen flow rates at room temperature with bias voltage applied at 5 V. The structural properties were characterized using Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The fesem image revealed the surface morphology of nanostructured ZnO. The diameters size of nanostructured Al-doped ZnO thin film was observed in range of 16-46 nm. These thin films were tested for oxygen-sensing characteristic by varying the gas flow rates at room temperature. The nanostructured Al-doped ZnO-based gas sensor exhibited good sensitivity at low flow rates of oxygen exposure.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117067741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920897
H. Hashim, S. S. Shariffudin, A. Khairuddin, M. Sarah, M. Rusop
Light-emitting diode (LED) applications consist of various materials. One of the materials used is polymer. In this study, MEH-PPV known as poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1, 4-phenylenevinylene] was used. The objective of this paper is to characterize the electrical and optical properties of MEH-PPV thin film by using sol-gel method. The scope is to study only the MEH-PPV thin film without implementation to any device. The MEH-PPV thin film thicknesses were varied from 10 to 100 nm. The experiment was started by stirring the sol-gel solution with toluene. The spin-coating technique was used to deposit the MEH-PPV thin film on a glass substrate. All samples were characterized using Atomic Force Microscopy (AFM), Surface Profiler, Two-point Probe, Raman PL Dispersive and UV-Vis Spectroscopy for the surface morphologies, thin film thickness, electrical and optical properties respectively. From the current-voltage (I-V) measurement, it show that symmetrical line plotted at low-voltage ranges. Moreover, the calculated conductivity was inversely proportional with the thin film thickness. The results from photoluminescence (PL) spectra showed that the intensity reached optimum peak at 38nm thickness and quenched for other samples. At 108 nm of thickness, absorption reached the highest peak compared to other samples of different thickness. The film was non-uniformed for the thickness at 134 nm, due to aggregation phenomenon.
{"title":"Electrical and optical properties characterization of MEH-PPV thin film using sol-gel method","authors":"H. Hashim, S. S. Shariffudin, A. Khairuddin, M. Sarah, M. Rusop","doi":"10.1109/SMELEC.2014.6920897","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920897","url":null,"abstract":"Light-emitting diode (LED) applications consist of various materials. One of the materials used is polymer. In this study, MEH-PPV known as poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1, 4-phenylenevinylene] was used. The objective of this paper is to characterize the electrical and optical properties of MEH-PPV thin film by using sol-gel method. The scope is to study only the MEH-PPV thin film without implementation to any device. The MEH-PPV thin film thicknesses were varied from 10 to 100 nm. The experiment was started by stirring the sol-gel solution with toluene. The spin-coating technique was used to deposit the MEH-PPV thin film on a glass substrate. All samples were characterized using Atomic Force Microscopy (AFM), Surface Profiler, Two-point Probe, Raman PL Dispersive and UV-Vis Spectroscopy for the surface morphologies, thin film thickness, electrical and optical properties respectively. From the current-voltage (I-V) measurement, it show that symmetrical line plotted at low-voltage ranges. Moreover, the calculated conductivity was inversely proportional with the thin film thickness. The results from photoluminescence (PL) spectra showed that the intensity reached optimum peak at 38nm thickness and quenched for other samples. At 108 nm of thickness, absorption reached the highest peak compared to other samples of different thickness. The film was non-uniformed for the thickness at 134 nm, due to aggregation phenomenon.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127089320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920889
N. Azhar, S. S. Shariffudin, Z. Nurbaya, I. H. Affendi, A. Shafura, M. Rusop
Nanocomposite based on zinc oxide (ZnO) nanostructures and poly [2-methoxy-5(2'-ethylhexyloxy)-phenylene vinylene) (MEH-PPV) of various weight percent have been obtained using sol-gel method. The substrates were deposit at 0.1 wt% to 0.4 wt% of ZnO with pure MEH-PPV to investigate the concentration effect of MEH-PPV/ZnO nanocomposite. The structural properties were characterized using FESEM and AFM to obtain the morphology of nanocomposite. From the AFM, it was found that the roughness is more uniform. The optical properties were obtained using ultraviolet-visible spectrometer (UV-Vis). It was found that the transmittance band increased with decreased of weight percent of ZnO nanostructures. For photoluminescence (PL) spectra shows that 0.4 wt% of ZnO at visible emission is due to emission characterisitic of PPV backbone which is arise from the relaxtion of excited π-electron to the ground state. This study will provide better performance and suitable for optoelectronic device especially OLEDs application.
{"title":"Optical performance of MEH-PPV/ZnO nanocomposite at different weight percent for OLED applications","authors":"N. Azhar, S. S. Shariffudin, Z. Nurbaya, I. H. Affendi, A. Shafura, M. Rusop","doi":"10.1109/SMELEC.2014.6920889","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920889","url":null,"abstract":"Nanocomposite based on zinc oxide (ZnO) nanostructures and poly [2-methoxy-5(2'-ethylhexyloxy)-phenylene vinylene) (MEH-PPV) of various weight percent have been obtained using sol-gel method. The substrates were deposit at 0.1 wt% to 0.4 wt% of ZnO with pure MEH-PPV to investigate the concentration effect of MEH-PPV/ZnO nanocomposite. The structural properties were characterized using FESEM and AFM to obtain the morphology of nanocomposite. From the AFM, it was found that the roughness is more uniform. The optical properties were obtained using ultraviolet-visible spectrometer (UV-Vis). It was found that the transmittance band increased with decreased of weight percent of ZnO nanostructures. For photoluminescence (PL) spectra shows that 0.4 wt% of ZnO at visible emission is due to emission characterisitic of PPV backbone which is arise from the relaxtion of excited π-electron to the ground state. This study will provide better performance and suitable for optoelectronic device especially OLEDs application.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133349240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920812
V. Retnasamy, Z. Sauli, R. Vairavan, H. Mamat
This work demonstrates the evaluation of stress distribution of the printed circuit boards (PCB) during the depanelling process and technique to manage it were investigated. The stress distribution of the PCB were evaluated using 4 types of PCB geometry, one without hole, one with single front hole, one with single centric hole and one with three through holes. The holes were placed in various positions to scrutinize the stress distribution of the PCB. The PCB boards were displaced with heights in the range of 1cm till 5cm. Ansys ver 11 was utilized to perform the simulation. Key results showed that the hole structures assisted in managing the stress distribution during the arching process of the PCB subjected to its position on the PCB.
本文研究了印制板拆板过程中应力分布的评估及控制技术。采用无孔、单前孔、单中心孔和三通孔4种PCB几何形状对PCB的应力分布进行了评价。这些孔被放置在不同的位置，以仔细检查PCB的应力分布。PCB板移位高度在1cm到5cm的范围内。利用Ansys ver 11进行仿真。关键结果表明，孔结构有助于控制其在PCB板上的位置在PCB板成拱过程中的应力分布。
{"title":"PCB depanelling stress distribution simulation analysis using designated thru holes","authors":"V. Retnasamy, Z. Sauli, R. Vairavan, H. Mamat","doi":"10.1109/SMELEC.2014.6920812","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920812","url":null,"abstract":"This work demonstrates the evaluation of stress distribution of the printed circuit boards (PCB) during the depanelling process and technique to manage it were investigated. The stress distribution of the PCB were evaluated using 4 types of PCB geometry, one without hole, one with single front hole, one with single centric hole and one with three through holes. The holes were placed in various positions to scrutinize the stress distribution of the PCB. The PCB boards were displaced with heights in the range of 1cm till 5cm. Ansys ver 11 was utilized to perform the simulation. Key results showed that the hole structures assisted in managing the stress distribution during the arching process of the PCB subjected to its position on the PCB.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"133 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133877290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920874
S. R. Kasjoo, M. M. Ramli, M. Zakaria, M. Arshad, R. Ayub, R. A. Rahim, U. Hashim
In this work, a back-gated field-effect device based on an exfoliated thin film of few-layer graphene (FLG) has been fabricated and some of its properties were characterized. The estimated hole mobility of the FLG film, extracted from the device transconductance, was approximately 843 cm2V-1s-1 which was lower than the typical reported values. The reasons for the lower mobility were briefly discussed in terms of charged impurity density, and contact resistance between FLG film and metal. The use of mechanical exfoliation method in producing thin films of FLG, which is cheap, fast and simple, can also be exploited in the development of other graphene-based devices.
{"title":"A field-effect device based on an exfoliated thin film of few-layer graphene","authors":"S. R. Kasjoo, M. M. Ramli, M. Zakaria, M. Arshad, R. Ayub, R. A. Rahim, U. Hashim","doi":"10.1109/SMELEC.2014.6920874","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920874","url":null,"abstract":"In this work, a back-gated field-effect device based on an exfoliated thin film of few-layer graphene (FLG) has been fabricated and some of its properties were characterized. The estimated hole mobility of the FLG film, extracted from the device transconductance, was approximately 843 cm2V-1s-1 which was lower than the typical reported values. The reasons for the lower mobility were briefly discussed in terms of charged impurity density, and contact resistance between FLG film and metal. The use of mechanical exfoliation method in producing thin films of FLG, which is cheap, fast and simple, can also be exploited in the development of other graphene-based devices.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116259226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920821
M. A. Ismail
Analytical-based and Monte Carlo-based are two methods available in TCAD for simulation of ion implantation step. This paper presents a selection of suitable implantation methods considering the speed and accuracy trade-off while fulfilling the calibrated TCAD requirements in MOSFET process and device simulations. Doping profiles from several device physicals such as channel, halo and source-drain structures are acquired to capture the impact of different implantation methods. The comparisons between measured and simulated doping profiles are presented to further investigate the trade-off as a function of energy levels and tilt angles. The best solution is proposed to obtain essentially calibrated TCAD simulation, without unnecessarily scarifying the simulation time.
{"title":"Impact of implantation methods on speed and accuracy trade-off in calibrated TCAD tool","authors":"M. A. Ismail","doi":"10.1109/SMELEC.2014.6920821","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920821","url":null,"abstract":"Analytical-based and Monte Carlo-based are two methods available in TCAD for simulation of ion implantation step. This paper presents a selection of suitable implantation methods considering the speed and accuracy trade-off while fulfilling the calibrated TCAD requirements in MOSFET process and device simulations. Doping profiles from several device physicals such as channel, halo and source-drain structures are acquired to capture the impact of different implantation methods. The comparisons between measured and simulated doping profiles are presented to further investigate the trade-off as a function of energy levels and tilt angles. The best solution is proposed to obtain essentially calibrated TCAD simulation, without unnecessarily scarifying the simulation time.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121666875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920913
W. Yusoff, A. Jalar, N. Othman, I. A. Rahman
The mechanical properties of gold wire bonding are subjected to thermal cycling (TC) test has been investigated. Gold wire bonding was experienced to temperature cycle of (-65) °C to 150 °C for 10, 100, and 1000 cycles. In order to determine the mechanical properties of gold wire, nanoindentation test was performed. A constant load nanoindentation test was carried out at the center of the gold wire to investigate hardness and reduced modulus. The load-depth curve for the thermal cycled gold wire bond displayed apparent discontinuities during loading as compared to the as-received gold wire bond. The hardness value has increased after the gold wire bond subjected to thermal cycle whilst, the hardness value has decreased with the increment of the TC cycle number. For reduced modulus, the values increased with increase of the TC cycle number. The decrease in the hardness value is in line with theoretical grain size coarsening following thermal treatment. These nanoindentation results are important in assessing the strength of gold wire bond after exposure to the thermal cycles.
{"title":"Effects of thermal cycling on the mechanical properties of gold wire bonding","authors":"W. Yusoff, A. Jalar, N. Othman, I. A. Rahman","doi":"10.1109/SMELEC.2014.6920913","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920913","url":null,"abstract":"The mechanical properties of gold wire bonding are subjected to thermal cycling (TC) test has been investigated. Gold wire bonding was experienced to temperature cycle of (-65) °C to 150 °C for 10, 100, and 1000 cycles. In order to determine the mechanical properties of gold wire, nanoindentation test was performed. A constant load nanoindentation test was carried out at the center of the gold wire to investigate hardness and reduced modulus. The load-depth curve for the thermal cycled gold wire bond displayed apparent discontinuities during loading as compared to the as-received gold wire bond. The hardness value has increased after the gold wire bond subjected to thermal cycle whilst, the hardness value has decreased with the increment of the TC cycle number. For reduced modulus, the values increased with increase of the TC cycle number. The decrease in the hardness value is in line with theoretical grain size coarsening following thermal treatment. These nanoindentation results are important in assessing the strength of gold wire bond after exposure to the thermal cycles.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124975096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920792
S. Norhafiezah, R. M. Ayub, M. Arshad, A. H. Azman, M. F. Fatin, M. A. Farehanim, U. Hashim
In this paper, we present the influence of deposition process parameter on the morphological properties of titanium dioxide (TiO2). Thin film of TiO2 was deposited on Si (100) substrate using the reactive Radio Frequency (RF) sputtering technique with different RF power. The XRD analysis showed that only Anatase structure was obtained during low RF power deposition, while both; Anatase and Rutile structure were obtained at high RF power. It was also observed that when the RF power is increased from 100W to 300W, the surface roughness and the particle size of the TiO2 film measured by using AFM were shown to be decreased from 0.39 to 0.25nm and 68.3 to 59.6nm respectively. Consequently, the diffuse transmittance measured using UV-vis spectroscopy shown degradation of transmittance percentage from 85% to 60% and the Eg also reduce from 3.24eV to 2.55eV. Moreover, the small particle size with the acceptable surface roughness, the less percentage of transmittance and the reduction of the band gap were successfully achieved.
{"title":"The RF power effect on the surface morphology of titanium dioxide (TiO2) film","authors":"S. Norhafiezah, R. M. Ayub, M. Arshad, A. H. Azman, M. F. Fatin, M. A. Farehanim, U. Hashim","doi":"10.1109/SMELEC.2014.6920792","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920792","url":null,"abstract":"In this paper, we present the influence of deposition process parameter on the morphological properties of titanium dioxide (TiO2). Thin film of TiO2 was deposited on Si (100) substrate using the reactive Radio Frequency (RF) sputtering technique with different RF power. The XRD analysis showed that only Anatase structure was obtained during low RF power deposition, while both; Anatase and Rutile structure were obtained at high RF power. It was also observed that when the RF power is increased from 100W to 300W, the surface roughness and the particle size of the TiO2 film measured by using AFM were shown to be decreased from 0.39 to 0.25nm and 68.3 to 59.6nm respectively. Consequently, the diffuse transmittance measured using UV-vis spectroscopy shown degradation of transmittance percentage from 85% to 60% and the Eg also reduce from 3.24eV to 2.55eV. Moreover, the small particle size with the acceptable surface roughness, the less percentage of transmittance and the reduction of the band gap were successfully achieved.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125632160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-13DOI: 10.1109/SMELEC.2014.6920905
K. A. Yusof, S. H. Herman, W. Abdullah
In this study, titanium dioxide (TiO2) thin films have been investigated as a sensing membrane of the extended gate field effect transistor (EGFET) for pH detection application. The sol-gel TiO2 has been prepared and spin coated onto the indium tin oxide (ITO) coated glass as a substrate. Then the TiO2/ITO test structures thin films were annealed for 15 min at different temperatures; 300 °C and 400 °C under ambient atmosphere. The pH sensing characterizations of TiO2 thin films were measured by Semiconductor Parametric Device Analyzer in different pH buffer solutions of pH 4, 7, 10 and 12. The sensitivity of TiO2 thin film annealed at 400 °C exhibited a higher sensitivity that is 51 mV/pH compared to the thin film annealed at 300 °C gave slightly lower sensitivity of 49 mV/pH. The hysteresis and drift effect for TiO2 thin films also being investigated in this study. TiO2 thin films annealed at 400 °C obtain better hysteresis and drift value compared to the TiO2 thin films annealed at 300 °C.
{"title":"TiO2-based extended gate FET pH-sensor: Effect of annealing temperature on its sensitivity, hysteresis and stability","authors":"K. A. Yusof, S. H. Herman, W. Abdullah","doi":"10.1109/SMELEC.2014.6920905","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920905","url":null,"abstract":"In this study, titanium dioxide (TiO<sub>2</sub>) thin films have been investigated as a sensing membrane of the extended gate field effect transistor (EGFET) for pH detection application. The sol-gel TiO<sub>2</sub> has been prepared and spin coated onto the indium tin oxide (ITO) coated glass as a substrate. Then the TiO<sub>2</sub>/ITO test structures thin films were annealed for 15 min at different temperatures; 300 °C and 400 °C under ambient atmosphere. The pH sensing characterizations of TiO<sub>2</sub> thin films were measured by Semiconductor Parametric Device Analyzer in different pH buffer solutions of pH 4, 7, 10 and 12. The sensitivity of TiO<sub>2</sub> thin film annealed at 400 °C exhibited a higher sensitivity that is 51 mV/pH compared to the thin film annealed at 300 °C gave slightly lower sensitivity of 49 mV/pH. The hysteresis and drift effect for TiO<sub>2</sub> thin films also being investigated in this study. TiO<sub>2</sub> thin films annealed at 400 °C obtain better hysteresis and drift value compared to the TiO<sub>2</sub> thin films annealed at 300 °C.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"83 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127974180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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