首页 > 最新文献

23rd IEEE VLSI Test Symposium (VTS'05)最新文献

英文 中文
Defect screening using independent component analysis on I/sub DDQ/ 使用独立分量分析对I/sub DDQ/进行缺陷筛选
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.38
R. Turakhia, B. Benware, R. Madge, Fort Collins, OR Gresham, T. Shannon, Robert Daasch
An I/sub DDQ/ Statistical Post-Processing/spl trade/ (SPP) outlier screen is presented based on the computation of statistically independent sources of variation in the I/sub DDQ/ measurements. I/sub DDQ/ measurements from die passing all other tests are modeled using sources of variation extracted by independent component analysis (ICA). Outliers are separated from the sample population based on residuals computed using these sources and a nearest neighbor spatial signature. An algorithm is presented for applying the proposed technique in production. The screen is demonstrated with 0.18/spl mu/m and 0.11/spl mu/m volume data and shown to effectively identify the outliers at the 0.1 /spl mu/m technology node.
基于I/sub DDQ/测量值中统计独立变异源的计算,提出了I/sub DDQ/ Statistical Post-Processing/spl trade/ (SPP)离群值筛选。通过所有其他测试的模具的I/sub DDQ/测量使用独立成分分析(ICA)提取的变异源进行建模。根据使用这些源和最近邻空间签名计算的残差,从样本总体中分离出离群值。提出了一种将该技术应用于生产的算法。该屏幕显示了0.18/spl mu/m和0.11/spl mu/m的体积数据,并显示可以有效识别0.1 /spl mu/m技术节点的异常值。
{"title":"Defect screening using independent component analysis on I/sub DDQ/","authors":"R. Turakhia, B. Benware, R. Madge, Fort Collins, OR Gresham, T. Shannon, Robert Daasch","doi":"10.1109/VTS.2005.38","DOIUrl":"https://doi.org/10.1109/VTS.2005.38","url":null,"abstract":"An I/sub DDQ/ Statistical Post-Processing/spl trade/ (SPP) outlier screen is presented based on the computation of statistically independent sources of variation in the I/sub DDQ/ measurements. I/sub DDQ/ measurements from die passing all other tests are modeled using sources of variation extracted by independent component analysis (ICA). Outliers are separated from the sample population based on residuals computed using these sources and a nearest neighbor spatial signature. An algorithm is presented for applying the proposed technique in production. The screen is demonstrated with 0.18/spl mu/m and 0.11/spl mu/m volume data and shown to effectively identify the outliers at the 0.1 /spl mu/m technology node.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114081017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Hierarchical compactor design for diagnosis in deterministic logic BIST 确定性逻辑BIST诊断的分层压缩器设计
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.48
P. Wohl, J. Waicukauski, Sanjay B. Patel, C. Hay, Emil Gizdarski, B. Mathew
Scan-based tests created by automatic test pattern generators (ATPG) can be efficiently compressed and applied in a deterministic built-in self-test (DBIST) architecture. However, the BIST environment adds significant complexity to failure diagnosis. We present a simple scan-compatible diagnosis solution - streaming DBIST (SDBIST), which is based on a low-overhead hierarchical compactor SDBIST allows continuously monitoring streaming scanout data for reduced-volume expect-data diagnosis, on-line fail-data collection and selective scan cell masking.
自动测试模式生成器(ATPG)创建的基于扫描的测试可以有效地压缩并应用于确定性内置自测(DBIST)体系结构中。然而,BIST环境大大增加了故障诊断的复杂性。我们提出了一种简单的扫描兼容诊断解决方案-流式DBIST (SDBIST),它基于低开销的分层压缩器。SDBIST允许连续监控流式扫描数据,以实现小容量的期望数据诊断、在线故障数据收集和选择性扫描单元屏蔽。
{"title":"Hierarchical compactor design for diagnosis in deterministic logic BIST","authors":"P. Wohl, J. Waicukauski, Sanjay B. Patel, C. Hay, Emil Gizdarski, B. Mathew","doi":"10.1109/VTS.2005.48","DOIUrl":"https://doi.org/10.1109/VTS.2005.48","url":null,"abstract":"Scan-based tests created by automatic test pattern generators (ATPG) can be efficiently compressed and applied in a deterministic built-in self-test (DBIST) architecture. However, the BIST environment adds significant complexity to failure diagnosis. We present a simple scan-compatible diagnosis solution - streaming DBIST (SDBIST), which is based on a low-overhead hierarchical compactor SDBIST allows continuously monitoring streaming scanout data for reduced-volume expect-data diagnosis, on-line fail-data collection and selective scan cell masking.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116429728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
SRAM retention testing: zero incremental time integration with March algorithms SRAM保留测试:零增量时间集成与三月算法
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.76
Baosheng Wang, Yuejian Wu, Josh Yang, A. Ivanov, Y. Zorian
Testing data retention faults (DRFs), particularly in integrated systems on chip comprised of very large number of various sizes and types of embedded SRAMs is challenging and typically time-consuming due to the required pause time that needs to be introduced in the test session. This paper proposes a novel technique, referred to as pre-discharge write test mode (PDWTM), that effectively integrates the testing of DRF within "regular" March algorithms such that the rate (speed) of the latter remains unaltered. That is, the PDWTM enables DRF testing without incurring the additional cycles or pauses in the March test execution thereby enabling additional coverage at no expense in terms of overall test time. We show that DRFs can be easily detected by pre-discharging bit lines before a write operation. Here, the PDWTM is evaluated using both high-speed and low power memory cells, representing two extreme cases based on the typical memory design methodologies.
测试数据保留故障(drf),特别是在由大量不同尺寸和类型的嵌入式sram组成的芯片上集成系统中,是具有挑战性的,并且通常是耗时的,因为需要在测试会话中引入所需的暂停时间。本文提出了一种新技术,称为预放电写入测试模式(PDWTM),该技术有效地将DRF测试集成到“常规”March算法中,从而使后者的速率(速度)保持不变。也就是说,PDWTM支持DRF测试,而不会在3月份的测试执行中产生额外的周期或暂停,因此可以在不花费整体测试时间的情况下实现额外的覆盖。我们表明,在写操作之前,通过预放电位线可以很容易地检测到drf。本文使用高速和低功耗存储单元对PDWTM进行了评估,这是基于典型存储设计方法的两种极端情况。
{"title":"SRAM retention testing: zero incremental time integration with March algorithms","authors":"Baosheng Wang, Yuejian Wu, Josh Yang, A. Ivanov, Y. Zorian","doi":"10.1109/VTS.2005.76","DOIUrl":"https://doi.org/10.1109/VTS.2005.76","url":null,"abstract":"Testing data retention faults (DRFs), particularly in integrated systems on chip comprised of very large number of various sizes and types of embedded SRAMs is challenging and typically time-consuming due to the required pause time that needs to be introduced in the test session. This paper proposes a novel technique, referred to as pre-discharge write test mode (PDWTM), that effectively integrates the testing of DRF within \"regular\" March algorithms such that the rate (speed) of the latter remains unaltered. That is, the PDWTM enables DRF testing without incurring the additional cycles or pauses in the March test execution thereby enabling additional coverage at no expense in terms of overall test time. We show that DRFs can be easily detected by pre-discharging bit lines before a write operation. Here, the PDWTM is evaluated using both high-speed and low power memory cells, representing two extreme cases based on the typical memory design methodologies.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128766230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Resistive Bridge fault model evolution from conventional to ultra deep submicron 电阻桥故障模型从常规到超深亚微米的演变
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.72
I. Polian, S. Kundu, J. Gallière, P. Engelke, M. Renovell, B. Becker
We present three resistive bridging fault models valid for different CMOS technologies. The models are partitioned into a general framework (which is shared by all three models) and a technology-specific part. The first model is based on Shockley equations and is valid for conventional but not deep submicron CMOS. The second model is obtained by fitting SPICE data. The third resistive bridging fault model uses Berkeley predictive technology model and BSIM4; it is valid for CMOS technologies with feature sizes of 90nm and below, accurately describing non-trivial electrical behavior in that technologies. Experimental results for ISCAS circuits show that the test patterns obtained for the Shockley model are still valid for the fitted model, but lead to coverage loss under the predictive model.
我们提出了三种适用于不同CMOS技术的电阻式桥接故障模型。这些模型被划分为一个通用框架(由所有三个模型共享)和一个特定于技术的部分。第一种模型基于肖克利方程,适用于常规但不适用于深亚微米CMOS。第二个模型是通过拟合SPICE数据得到的。第三种电阻式桥接故障模型采用Berkeley预测技术模型和BSIM4;它适用于特征尺寸为90纳米及以下的CMOS技术,准确描述了该技术中的非平凡电气行为。ISCAS电路的实验结果表明,肖克利模型得到的测试图对拟合模型仍然有效,但在预测模型下会导致覆盖损失。
{"title":"Resistive Bridge fault model evolution from conventional to ultra deep submicron","authors":"I. Polian, S. Kundu, J. Gallière, P. Engelke, M. Renovell, B. Becker","doi":"10.1109/VTS.2005.72","DOIUrl":"https://doi.org/10.1109/VTS.2005.72","url":null,"abstract":"We present three resistive bridging fault models valid for different CMOS technologies. The models are partitioned into a general framework (which is shared by all three models) and a technology-specific part. The first model is based on Shockley equations and is valid for conventional but not deep submicron CMOS. The second model is obtained by fitting SPICE data. The third resistive bridging fault model uses Berkeley predictive technology model and BSIM4; it is valid for CMOS technologies with feature sizes of 90nm and below, accurately describing non-trivial electrical behavior in that technologies. Experimental results for ISCAS circuits show that the test patterns obtained for the Shockley model are still valid for the fitted model, but lead to coverage loss under the predictive model.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122014859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 48
Unsatisfiability based efficient design for testability solution for register-transfer level circuits 基于不满意度的寄存器传输级电路可测性高效设计
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.88
L. Lingappan, N. Jha
In this paper, we present a novel and accurate method for identifying design for testability (DFT) solutions for register-transfer level (RTL) circuits. In this technique, clauses are generated using a satisfiability (SAT) based automatic test pattern generation (ATPG) tool to represent the control and data flow for a module under test in the given RTL circuit. RTL test generation makes use of the concept of pre-computed test sets for different RTL modules. The generated clauses corresponding to different pre-computed test vectors are then resolved by a SAT solver to obtain the test sequences for that module. In case of an unsatisfiable (UNSAT) solution, recent advances in the field of satisfiability enable us to accurately and efficiently identify clauses that are responsible for unsatisfiability (also known as the unsatisfiable segment). We show that adding DFT elements is equivalent to modifying clauses such that the unsatisfiable segment becomes satisfiable. In order to minimize the number of DFT elements added to a circuit, a greedy algorithm is used to select circuit variables for DFT such that all the unsatisfiable segments become satisfiable. Unlike existing DFT techniques that are either inefficient in terms of the amount of test hardware added or take significant time to identify an efficient solution, the proposed DFT technique is both fast and accurate as it is applicable to RTL and mixed gate-level/RTL circuits and uses UNSAT to identify the DFT solutions. Experimental results on benchmarks show that for RTL circuits, the CPU time required to identify pre-computed test vectors for which the SAT ATPG fails to generate test sequences and to select DFT solutions for such cases is two orders of magnitude smaller than the time required for a single run of a gate-level sequential test generator. The DFT solution has very low area overhead (an average of 1.7%) and results in near-100% fault coverage.
在本文中,我们提出了一种新颖而准确的方法来识别寄存器传输电平(RTL)电路的可测试性(DFT)解的设计。在该技术中,子句是使用基于可满足性(SAT)的自动测试模式生成(ATPG)工具生成的,以表示给定RTL电路中被测模块的控制和数据流。RTL测试生成利用了针对不同RTL模块的预计算测试集的概念。生成的子句对应于不同的预先计算的测试向量,然后由SAT求解器解析得到该模块的测试序列。在不令人满意(UNSAT)解决方案的情况下,可满意性领域的最新进展使我们能够准确有效地识别导致不令人满意(也称为不令人满意的部分)的条款。我们证明了添加DFT元素等价于修改子句,使不可满足的段变为可满足的。为了使添加到电路中的DFT元素的数量最小化,采用贪心算法选择DFT的电路变量,使所有不能满足的段变为可满足的。现有的DFT技术要么在添加的测试硬件数量方面效率低下,要么需要花费大量时间来确定有效的解决方案,与之不同,所提出的DFT技术既快速又准确,因为它适用于RTL和混合门电平/RTL电路,并使用UNSAT来识别DFT解决方案。基准测试的实验结果表明,对于RTL电路,识别SAT ATPG无法生成测试序列的预计算测试向量所需的CPU时间,以及在这种情况下选择DFT解决方案所需的CPU时间,比门级顺序测试发生器单次运行所需的时间要小两个数量级。DFT解决方案具有非常低的面积开销(平均为1.7%),并且导致接近100%的故障覆盖率。
{"title":"Unsatisfiability based efficient design for testability solution for register-transfer level circuits","authors":"L. Lingappan, N. Jha","doi":"10.1109/VTS.2005.88","DOIUrl":"https://doi.org/10.1109/VTS.2005.88","url":null,"abstract":"In this paper, we present a novel and accurate method for identifying design for testability (DFT) solutions for register-transfer level (RTL) circuits. In this technique, clauses are generated using a satisfiability (SAT) based automatic test pattern generation (ATPG) tool to represent the control and data flow for a module under test in the given RTL circuit. RTL test generation makes use of the concept of pre-computed test sets for different RTL modules. The generated clauses corresponding to different pre-computed test vectors are then resolved by a SAT solver to obtain the test sequences for that module. In case of an unsatisfiable (UNSAT) solution, recent advances in the field of satisfiability enable us to accurately and efficiently identify clauses that are responsible for unsatisfiability (also known as the unsatisfiable segment). We show that adding DFT elements is equivalent to modifying clauses such that the unsatisfiable segment becomes satisfiable. In order to minimize the number of DFT elements added to a circuit, a greedy algorithm is used to select circuit variables for DFT such that all the unsatisfiable segments become satisfiable. Unlike existing DFT techniques that are either inefficient in terms of the amount of test hardware added or take significant time to identify an efficient solution, the proposed DFT technique is both fast and accurate as it is applicable to RTL and mixed gate-level/RTL circuits and uses UNSAT to identify the DFT solutions. Experimental results on benchmarks show that for RTL circuits, the CPU time required to identify pre-computed test vectors for which the SAT ATPG fails to generate test sequences and to select DFT solutions for such cases is two orders of magnitude smaller than the time required for a single run of a gate-level sequential test generator. The DFT solution has very low area overhead (an average of 1.7%) and results in near-100% fault coverage.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121918589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Test and characterization of a variable-capacity multilevel DRAM 可变容量多电平DRAM的测试与表征
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.82
J. C. Koob, S. A. Ung, Ashwin S. Rao, Daniel A. Leder, Craig S. Joly, K.C. Breen, T. Brandon, M. Hume, B. Cockburn, D. Elliott
Multilevel DRAM (MLDRAM) increases the storage density of DRAMs by using more than two data signal levels in the storage cells. An operational 19200-cell MLDRAM in 1.8-V 0.18-/spl mu/m mixed-signal CMOS is described that allows 1, 1.5, 2, 2.25 and 2.5 bits-per-cell operation using 2, 3, 4, 5 and 6 data signal levels, respectively. The MLDRAM uses reference and data cell signals that are generated in the cell array using charge sharing. The single-step sensing method uses multiple reference signals in parallel. Test chip characterization features include four cell sizes, two sense amplifier sizes, and bitline shields for half of the cells. New tests were developed based on an MLDRAM fault model. These include basic functionality, retention time, multilevel march, inter-bitline coupling, and cell-plate voltage bump tests. Our results show that the data and reference signals are generated correctly and that MLDRAM is possible for up to six signal levels.
多电平DRAM (MLDRAM)通过在存储单元中使用两个以上的数据信号电平来增加DRAM的存储密度。描述了一种可操作的19200单元MLDRAM,采用1.8 v 0.18-/spl mu/m混合信号CMOS,分别使用2、3、4、5和6个数据信号电平,允许1,1.5、2、2.25和2.5位/单元操作。MLDRAM使用在单元阵列中使用电荷共享产生的参考和数据单元信号。单步传感方法采用多个参考信号并联。测试芯片的特性特征包括四种单元尺寸,两种感测放大器尺寸,以及一半单元的位线屏蔽。基于MLDRAM故障模型开发了新的测试方法。这些测试包括基本功能、保持时间、多级行进、位线间耦合和电池板电压碰撞测试。我们的结果表明,数据和参考信号的生成是正确的,并且MLDRAM可以达到6个信号电平。
{"title":"Test and characterization of a variable-capacity multilevel DRAM","authors":"J. C. Koob, S. A. Ung, Ashwin S. Rao, Daniel A. Leder, Craig S. Joly, K.C. Breen, T. Brandon, M. Hume, B. Cockburn, D. Elliott","doi":"10.1109/VTS.2005.82","DOIUrl":"https://doi.org/10.1109/VTS.2005.82","url":null,"abstract":"Multilevel DRAM (MLDRAM) increases the storage density of DRAMs by using more than two data signal levels in the storage cells. An operational 19200-cell MLDRAM in 1.8-V 0.18-/spl mu/m mixed-signal CMOS is described that allows 1, 1.5, 2, 2.25 and 2.5 bits-per-cell operation using 2, 3, 4, 5 and 6 data signal levels, respectively. The MLDRAM uses reference and data cell signals that are generated in the cell array using charge sharing. The single-step sensing method uses multiple reference signals in parallel. Test chip characterization features include four cell sizes, two sense amplifier sizes, and bitline shields for half of the cells. New tests were developed based on an MLDRAM fault model. These include basic functionality, retention time, multilevel march, inter-bitline coupling, and cell-plate voltage bump tests. Our results show that the data and reference signals are generated correctly and that MLDRAM is possible for up to six signal levels.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129036494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Testing the interconnect networks and I/O resources of field programmable analog arrays 测试互连网络和I/O资源的现场可编程模拟阵列
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.85
Gustavo Pereira, A. Andrade, T. Balen, M. Lubaszewski, F. Azaïs, M. Renovell
The test of field programmable analog arrays (FPAA) may be performed based on partitioning these devices in three main parts: I/O cells, interconnection networks and configurable analog blocks. In this work, a scheme for testing the I/O cells and the local and global interconnection networks of FPAAs is proposed, using an adjacency graph model to represent the programmable interconnection and I/O resources, and then devising a set of test configurations (TC) by solving graph coloring problems. The goal is to achieve a near minimum number of TCs ensuring all stuck-open and stuck-on faults in switches, as well as opens and shorts in wires, are covered. Large parametric faults in interconnects are implicitly covered in these TCs by judiciously choosing test stimuli and, in I/O buffers, by means of an oscillation-based test strategy.
现场可编程模拟阵列(FPAA)的测试可以基于将这些设备划分为三个主要部分来执行:I/O单元、互连网络和可配置模拟块。本文提出了一种测试FPAAs的I/O单元以及局部和全局互连网络的方案,使用邻接图模型来表示可编程互连和I/O资源,然后通过解决图着色问题设计一组测试配置(TC)。目标是实现接近最小数量的tc,以确保覆盖开关中所有卡开和卡接故障,以及电线的开路和短路。通过明智地选择测试刺激,以及在I/O缓冲中,通过基于振荡的测试策略,这些tc隐含地覆盖了互连中的大参数故障。
{"title":"Testing the interconnect networks and I/O resources of field programmable analog arrays","authors":"Gustavo Pereira, A. Andrade, T. Balen, M. Lubaszewski, F. Azaïs, M. Renovell","doi":"10.1109/VTS.2005.85","DOIUrl":"https://doi.org/10.1109/VTS.2005.85","url":null,"abstract":"The test of field programmable analog arrays (FPAA) may be performed based on partitioning these devices in three main parts: I/O cells, interconnection networks and configurable analog blocks. In this work, a scheme for testing the I/O cells and the local and global interconnection networks of FPAAs is proposed, using an adjacency graph model to represent the programmable interconnection and I/O resources, and then devising a set of test configurations (TC) by solving graph coloring problems. The goal is to achieve a near minimum number of TCs ensuring all stuck-open and stuck-on faults in switches, as well as opens and shorts in wires, are covered. Large parametric faults in interconnects are implicitly covered in these TCs by judiciously choosing test stimuli and, in I/O buffers, by means of an oscillation-based test strategy.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125612813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Implementing a scheme for external deterministic self-test 实现了一种外部确定性自检方案
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.50
A. Hakmi, H. Wunderlich, V. Gherman, Michael Garbers, J. Schlöffel
A method for test resource partitioning is introduced which keeps the design-for-test logic test set independent and moves the test pattern dependent information to an external, programmable chip. The scheme includes a new decompression scheme for a fast and efficient communication between the external test chip and the circuit under test. The hardware costs on chip are significantly lower compared with a deterministic BIST scheme while the test application time is still in the same range. The proposed scheme is fully programmable, flexible and can be reused at board level for testing in the field.
介绍了一种测试资源划分方法,该方法使测试设计逻辑测试集保持独立性,并将测试模式相关信息转移到外部可编程芯片上。该方案包括一种新的解压缩方案,以实现外部测试芯片与被测电路之间快速有效的通信。与确定性BIST方案相比,该方案的芯片硬件成本明显降低,而测试应用时间仍在同一范围内。所提出的方案是完全可编程的,灵活的,并且可以在板级上重复使用,以进行现场测试。
{"title":"Implementing a scheme for external deterministic self-test","authors":"A. Hakmi, H. Wunderlich, V. Gherman, Michael Garbers, J. Schlöffel","doi":"10.1109/VTS.2005.50","DOIUrl":"https://doi.org/10.1109/VTS.2005.50","url":null,"abstract":"A method for test resource partitioning is introduced which keeps the design-for-test logic test set independent and moves the test pattern dependent information to an external, programmable chip. The scheme includes a new decompression scheme for a fast and efficient communication between the external test chip and the circuit under test. The hardware costs on chip are significantly lower compared with a deterministic BIST scheme while the test application time is still in the same range. The proposed scheme is fully programmable, flexible and can be reused at board level for testing in the field.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"1256 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115829156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Reductions of instantaneous power by ripple scan clocking 通过纹波扫描时钟降低瞬时功率
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.71
Kirti Joshi, E. MacDonald
The exponential increase in the number of transistors implemented in integrated circuits in each new generation of CMOS technology is causing an explosion not only in functional power consumption but in test power consumption as well. Although most research has focused mainly on reducing average power or the total energy consumed during test, instantaneous power consumption is also increasing and posing a serious threat for the ability of a chip to be tested in a manufacturing test floor - or worse in field testing using built-in-self test (BIST) where battery-powered applications lack the supply voltage robustness of automated test equipment (ATE). In this paper, a flip-flop design is proposed that is the cornerstone of a novel scan clocking architecture inspired by the need to reduce instantaneous power during scan.
在每一代新CMOS技术中,集成电路中实现的晶体管数量呈指数级增长,不仅在功能功耗方面,而且在测试功耗方面也引起了爆炸式增长。尽管大多数研究主要集中在降低测试期间的平均功耗或总能耗上,但瞬时功耗也在增加,并对芯片在制造测试平台中的测试能力构成严重威胁,或者更糟的是,在使用内置自检(BIST)的现场测试中,电池供电的应用缺乏自动化测试设备(ATE)的供电电压稳健性。本文提出了一种触发器设计,该设计是一种新型扫描时钟架构的基础,其灵感来自于降低扫描过程中的瞬时功率的需要。
{"title":"Reductions of instantaneous power by ripple scan clocking","authors":"Kirti Joshi, E. MacDonald","doi":"10.1109/VTS.2005.71","DOIUrl":"https://doi.org/10.1109/VTS.2005.71","url":null,"abstract":"The exponential increase in the number of transistors implemented in integrated circuits in each new generation of CMOS technology is causing an explosion not only in functional power consumption but in test power consumption as well. Although most research has focused mainly on reducing average power or the total energy consumed during test, instantaneous power consumption is also increasing and posing a serious threat for the ability of a chip to be tested in a manufacturing test floor - or worse in field testing using built-in-self test (BIST) where battery-powered applications lack the supply voltage robustness of automated test equipment (ATE). In this paper, a flip-flop design is proposed that is the cornerstone of a novel scan clocking architecture inspired by the need to reduce instantaneous power during scan.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127725062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Power-aware test scheduling in network-on-chip using variable-rate on-chip clocking 基于可变速率片上时钟的片上网络中功率感知测试调度
Pub Date : 2005-05-01 DOI: 10.1109/VTS.2005.66
Chunsheng Liu, V. Iyengar, Jiangfan Shi, É. Cota
Network-on-chip is the new paradigm in core-based system design. Reuse of the on-chip communication network for NoC test is critical to reduce test cost. However, efficient reuse of the communication network for test of legacy cores is challenging. A mismatch between the NoC channel width and the core test wrapper width can adversely affect test efficiency. In addition, stringent power constraints on today's high-density systems exacerbate the test scheduling problem. In this paper, we propose a method for efficiently utilizing the on-chip network for power-aware test scheduling in NoCs. We make use of on-chip clocking to speed up test data transfer by selectively using faster clocks to test certain cores; other cores receive slower clocks to limit test power consumption. A method is presented to determine the clock rate distribution among cores. Experimental results for the ITC '02 benchmarks show that the new method leads to substantial reduction in overall test application time, while satisfying power constraints.
片上网络是基于核心的系统设计的新范式。芯片上通信网络的复用是降低测试成本的关键。然而,有效地重用通信网络来测试遗留核心是一个挑战。NoC通道宽度和核心测试封装宽度之间的不匹配会对测试效率产生不利影响。此外,当今高密度系统的严格功率限制加剧了测试调度问题。本文提出了一种有效利用片上网络进行功耗感知测试调度的方法。我们利用片上时钟,通过选择性地使用更快的时钟来测试某些核心,以加快测试数据的传输;其他内核接收较慢的时钟以限制测试功耗。提出了一种确定内核间时钟速率分布的方法。ITC '02基准测试的实验结果表明,新方法在满足功耗限制的同时,大大减少了总体测试应用时间。
{"title":"Power-aware test scheduling in network-on-chip using variable-rate on-chip clocking","authors":"Chunsheng Liu, V. Iyengar, Jiangfan Shi, É. Cota","doi":"10.1109/VTS.2005.66","DOIUrl":"https://doi.org/10.1109/VTS.2005.66","url":null,"abstract":"Network-on-chip is the new paradigm in core-based system design. Reuse of the on-chip communication network for NoC test is critical to reduce test cost. However, efficient reuse of the communication network for test of legacy cores is challenging. A mismatch between the NoC channel width and the core test wrapper width can adversely affect test efficiency. In addition, stringent power constraints on today's high-density systems exacerbate the test scheduling problem. In this paper, we propose a method for efficiently utilizing the on-chip network for power-aware test scheduling in NoCs. We make use of on-chip clocking to speed up test data transfer by selectively using faster clocks to test certain cores; other cores receive slower clocks to limit test power consumption. A method is presented to determine the clock rate distribution among cores. Experimental results for the ITC '02 benchmarks show that the new method leads to substantial reduction in overall test application time, while satisfying power constraints.","PeriodicalId":268324,"journal":{"name":"23rd IEEE VLSI Test Symposium (VTS'05)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131407341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 71
期刊
23rd IEEE VLSI Test Symposium (VTS'05)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1