Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964388
C. Whelan, P. Marsh, R. Leoni, J. Hunt, M. Grigas, W. Hoke, K. C. Hwang, T. Kazior, A. Joshi, X. Wang
High-speed metamorphic PIN diodes that absorb at 1.55 /spl mu/m wavelength light were fabricated on a GaAs substrate. The In/sub 0.53/Ga/sub 0.47/As-based top-illuminated structure showed a low, stable dark current of 7 nA at 10 V reverse bias. The packaged diode demonstrated a -3 dB bandwidth of 52 GHz and 0.52 A/W responsivity. This state-of-the-art diode fabricated on a highly manufacturable GaAs substrate is clearly suitable for the 40 Gbit/s fiber optic telecommunication market, and opens the door for metamorphic OEICs.
{"title":"Metamorphic PIN photodiodes for the 40 Gb/s fiber market","authors":"C. Whelan, P. Marsh, R. Leoni, J. Hunt, M. Grigas, W. Hoke, K. C. Hwang, T. Kazior, A. Joshi, X. Wang","doi":"10.1109/GAAS.2001.964388","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964388","url":null,"abstract":"High-speed metamorphic PIN diodes that absorb at 1.55 /spl mu/m wavelength light were fabricated on a GaAs substrate. The In/sub 0.53/Ga/sub 0.47/As-based top-illuminated structure showed a low, stable dark current of 7 nA at 10 V reverse bias. The packaged diode demonstrated a -3 dB bandwidth of 52 GHz and 0.52 A/W responsivity. This state-of-the-art diode fabricated on a highly manufacturable GaAs substrate is clearly suitable for the 40 Gbit/s fiber optic telecommunication market, and opens the door for metamorphic OEICs.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124908145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964383
F. Murgadella, P. Coulon, C. Moreau
During the last 3 years, the French MoD has supported technology developments and/or specific MMICs designs for power amplification from S-band to Ku-band (i.e. 18 GHz), for radar and electronic warfare applications. Our objective in this paper, is to present and analyse the results obtained on three X-band power amplifiers using different GaAs technologies and designs with a view to meeting the same specifications target. To our knowledge, this is the first time a concrete comparison is conducted on three different state-of-the art technologies, simultaneously taking into account, technology, reliability issues and microwave measurements of MMICs.
{"title":"Comparisons of technologies and MMICS results for military needs","authors":"F. Murgadella, P. Coulon, C. Moreau","doi":"10.1109/GAAS.2001.964383","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964383","url":null,"abstract":"During the last 3 years, the French MoD has supported technology developments and/or specific MMICs designs for power amplification from S-band to Ku-band (i.e. 18 GHz), for radar and electronic warfare applications. Our objective in this paper, is to present and analyse the results obtained on three X-band power amplifiers using different GaAs technologies and designs with a view to meeting the same specifications target. To our knowledge, this is the first time a concrete comparison is conducted on three different state-of-the art technologies, simultaneously taking into account, technology, reliability issues and microwave measurements of MMICs.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124974299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964393
K. Feng, L. Runshing, P. Canfield, Wanxiu Sun
The reliability of InGaP/GaAs heterojunction bipolar transistors (HBT's) under high emitter current density stress has been investigated. The current acceleration of transistor lifetime is modeled as a power law relationship. Over a range of 25kA/cm/sup 2/ to 150 kA/cm/sup 2/, we have extracted a square root dependence of lifetime on current density. These results compare with an approximate square law result measured on AlGaAs HBT's.
{"title":"Reliability of InGaP/GaAs HBT's under high current acceleration","authors":"K. Feng, L. Runshing, P. Canfield, Wanxiu Sun","doi":"10.1109/GAAS.2001.964393","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964393","url":null,"abstract":"The reliability of InGaP/GaAs heterojunction bipolar transistors (HBT's) under high emitter current density stress has been investigated. The current acceleration of transistor lifetime is modeled as a power law relationship. Over a range of 25kA/cm/sup 2/ to 150 kA/cm/sup 2/, we have extracted a square root dependence of lifetime on current density. These results compare with an approximate square law result measured on AlGaAs HBT's.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130935378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964372
Y. Chou, D. Leung, R. Lai, J. Scarpulla, M. Barsky, R. Grundbacher, D. Eng, P. Liu, A. Oki, D. Streit
The high-reliability performance of K-band MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process is reported. Operating at an accelerated life test condition of V/sub ds/=1.2 V and I/sub ds/=150 mA/mm, two-stage balanced amplifiers were life tested at three temperatures (T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C) in a N/sub 2/ ambient. The activation energy (E/sub a/) is as high as 2 eV, achieving a projected median-time-to-failure (MTF) >1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. MTF was determined by 3-temperature constant current stress using | /spl Delta/S21 | >1.0 dB as the failure criteria. This is the first demonstration of 3-temperature high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT based on small-signal microwave characteristics of HEMT MMIC. This result demonstrates a robust InGaAs/InAlAs/InP HEMT production technology.
{"title":"High reliability of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP production process","authors":"Y. Chou, D. Leung, R. Lai, J. Scarpulla, M. Barsky, R. Grundbacher, D. Eng, P. Liu, A. Oki, D. Streit","doi":"10.1109/GAAS.2001.964372","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964372","url":null,"abstract":"The high-reliability performance of K-band MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process is reported. Operating at an accelerated life test condition of V/sub ds/=1.2 V and I/sub ds/=150 mA/mm, two-stage balanced amplifiers were life tested at three temperatures (T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C) in a N/sub 2/ ambient. The activation energy (E/sub a/) is as high as 2 eV, achieving a projected median-time-to-failure (MTF) >1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. MTF was determined by 3-temperature constant current stress using | /spl Delta/S21 | >1.0 dB as the failure criteria. This is the first demonstration of 3-temperature high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT based on small-signal microwave characteristics of HEMT MMIC. This result demonstrates a robust InGaAs/InAlAs/InP HEMT production technology.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132261174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964358
P. Blount, J. Cuggino, J. McPhee
In this paper we present a state-of-the-art Power Amplifier module operating at S-band. The power module consists of an InGaP HBT MMIC amplifier at 3.5 GHz with the necessary bias and output matching networks integrated using standard surface mount components. As such the module is truly 50 /spl Omega/ matched at input and output ports with no external circuitry required. The technology chosen for the module is a low cost, high volume ball grid array (BGA) technology, which is widely available. The power module gave a peak output power of 27.5 dBm and a power added efficiency of 44% from a single +5 V supply.
{"title":"A 3.5 GHz fully integrated power amplifier module","authors":"P. Blount, J. Cuggino, J. McPhee","doi":"10.1109/GAAS.2001.964358","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964358","url":null,"abstract":"In this paper we present a state-of-the-art Power Amplifier module operating at S-band. The power module consists of an InGaP HBT MMIC amplifier at 3.5 GHz with the necessary bias and output matching networks integrated using standard surface mount components. As such the module is truly 50 /spl Omega/ matched at input and output ports with no external circuitry required. The technology chosen for the module is a low cost, high volume ball grid array (BGA) technology, which is widely available. The power module gave a peak output power of 27.5 dBm and a power added efficiency of 44% from a single +5 V supply.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128545834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964341
P. Blount
In this paper we present a 25-34 GHz subharmonically pumped image reject mixer (IRM). This is to the author's knowledge the first detailed report of a subharmonic IRM MMIC in this frequency band (Smith and Novak, 1998). It directly addresses the LMDS frequency band, and also 26 GHz and 28 GHz point to point radio applications. The IRM has a conversion loss of 11dB, an image rejection of 22-24 dB and an input IP3 of +17 dBm. To further reduce the required MMW system complexity, an on-board LO amplifier has been included reducing the required LO drive to 2 dBm while drawing only 28 mA at 4 V. Due to lumped element matching throughout, the design occupies only 2.28 mm/sup 2/ of GaAs area.
{"title":"An LMDS, subharmonically pumped image reject mixer","authors":"P. Blount","doi":"10.1109/GAAS.2001.964341","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964341","url":null,"abstract":"In this paper we present a 25-34 GHz subharmonically pumped image reject mixer (IRM). This is to the author's knowledge the first detailed report of a subharmonic IRM MMIC in this frequency band (Smith and Novak, 1998). It directly addresses the LMDS frequency band, and also 26 GHz and 28 GHz point to point radio applications. The IRM has a conversion loss of 11dB, an image rejection of 22-24 dB and an input IP3 of +17 dBm. To further reduce the required MMW system complexity, an on-board LO amplifier has been included reducing the required LO drive to 2 dBm while drawing only 28 mA at 4 V. Due to lumped element matching throughout, the design occupies only 2.28 mm/sup 2/ of GaAs area.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"31 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132792771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964387
D. Streit, R. Lai, A. Gutierrez-Aitken, M. Siddiqui, B. Allen, A. Chau, W. Beale, A. Oki
We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.
{"title":"InP and GaAs components for 40 Gbps applications","authors":"D. Streit, R. Lai, A. Gutierrez-Aitken, M. Siddiqui, B. Allen, A. Chau, W. Beale, A. Oki","doi":"10.1109/GAAS.2001.964387","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964387","url":null,"abstract":"We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124540651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964347
A. Gasmi, B. Wroblewski, R. Leblanc, D. Smith, M. Rocchi
We present a high performance 2.5 Gb/s Transimpedance Amplifier (TIA) with the lowest input noise current ever reported at 3.3 V. Typical use is as a low noise preamplifier for lightwave receiver modules in optical fiber with an exceptionally good sensitivity and high gain. The circuit features a very small chip size, differential outputs, very low power consumption and built in Automatic Gain Control (AGC) to allow operation over a wide dynamic range. We have used an advanced enhancement-depletion mode PHEMT process to fabricate the device. This type of process offers the designer the flexibility and options required to obtain both a very good noise figure and low power consumption.
{"title":"Ultra low noise 2.5 Gbit/s 3.3V transimpedance amplifier with automatic gain control","authors":"A. Gasmi, B. Wroblewski, R. Leblanc, D. Smith, M. Rocchi","doi":"10.1109/GAAS.2001.964347","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964347","url":null,"abstract":"We present a high performance 2.5 Gb/s Transimpedance Amplifier (TIA) with the lowest input noise current ever reported at 3.3 V. Typical use is as a low noise preamplifier for lightwave receiver modules in optical fiber with an exceptionally good sensitivity and high gain. The circuit features a very small chip size, differential outputs, very low power consumption and built in Automatic Gain Control (AGC) to allow operation over a wide dynamic range. We have used an advanced enhancement-depletion mode PHEMT process to fabricate the device. This type of process offers the designer the flexibility and options required to obtain both a very good noise figure and low power consumption.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115445487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964356
K. Ishii, H. Nosaka, H. Nakajima, K. Kurishima, M. Ida, N. Watanabe, Y. Yamane, E. Sano, T. Enoki
Using InP/InGaAs heterojunction bipolar transistor (HBT) technology, we have successfully designed and fabricated a low power 1:16 demultiplexer (DEMUX) IC and one-chip clock and data recovery (CDR) with a 1:4 DEMUX IC for 10 Gbit/s optical communication systems. The HBTs were fabricated by a non-self-aligned process to achieve high productivity and uniformity of device characteristics. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consist of approximately 1200 and 460 transistors, respectively. We have confirmed error-free operation at 10 Gbit/s for all data outputs of both ICs. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consume only 1 W and 950 mW, respectively. These results demonstrate the feasibility of InP/InGaAs HBTs for low-power, high-integration optical communication ICs.
{"title":"1-W 1:16 DEMUX and one-chip CDR with 1:4 DEMUX for 10 Gbit/s optical communication systems","authors":"K. Ishii, H. Nosaka, H. Nakajima, K. Kurishima, M. Ida, N. Watanabe, Y. Yamane, E. Sano, T. Enoki","doi":"10.1109/GAAS.2001.964356","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964356","url":null,"abstract":"Using InP/InGaAs heterojunction bipolar transistor (HBT) technology, we have successfully designed and fabricated a low power 1:16 demultiplexer (DEMUX) IC and one-chip clock and data recovery (CDR) with a 1:4 DEMUX IC for 10 Gbit/s optical communication systems. The HBTs were fabricated by a non-self-aligned process to achieve high productivity and uniformity of device characteristics. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consist of approximately 1200 and 460 transistors, respectively. We have confirmed error-free operation at 10 Gbit/s for all data outputs of both ICs. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consume only 1 W and 950 mW, respectively. These results demonstrate the feasibility of InP/InGaAs HBTs for low-power, high-integration optical communication ICs.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131952286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964364
H. Shigematsu, N. Yoshida, M. Sato, N. Hara, T. Hirose, Y. Watanabe
We developed a coplanar waveguided-type distributed amplifier for a LiNbO/sub 3/ modulator driver (LN driver) using double-doped AlGaAs/InGaAs/AlGaAs-pseudomorphic High Electron Mobility Transistors (p-HEMTs). By using a stabilization and impedance control technique, we obtained a 45 GHz bandwidth for coplanar waveguided (CPW) lines with a 600 /spl mu/m thick substrate and 54 GHz bandwidth for grounded coplanar waveguided (GCPW) lines with a 75 /spl mu/m thick substrate, and a linear 6-Vp-p output at 40 Gb/s. These results indicate that our circuit design technique is suitable for use in fiber-optic communication systems.
{"title":"45 GHz distributed amplifier with a linear 6-Vp-p output for a 40 Gb/s LiNbO/sub 3/ modulator driver circuit","authors":"H. Shigematsu, N. Yoshida, M. Sato, N. Hara, T. Hirose, Y. Watanabe","doi":"10.1109/GAAS.2001.964364","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964364","url":null,"abstract":"We developed a coplanar waveguided-type distributed amplifier for a LiNbO/sub 3/ modulator driver (LN driver) using double-doped AlGaAs/InGaAs/AlGaAs-pseudomorphic High Electron Mobility Transistors (p-HEMTs). By using a stabilization and impedance control technique, we obtained a 45 GHz bandwidth for coplanar waveguided (CPW) lines with a 600 /spl mu/m thick substrate and 54 GHz bandwidth for grounded coplanar waveguided (GCPW) lines with a 75 /spl mu/m thick substrate, and a linear 6-Vp-p output at 40 Gb/s. These results indicate that our circuit design technique is suitable for use in fiber-optic communication systems.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131306771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：