Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964337
H. Bennett
Unlike the silicon semiconductor industry, the compound semiconductor industry does not have an international consensus for a few selected applications and markets to set priorities for investments. The main purpose of this paper is to increase the awareness among industrial decision-makers about the need for an international consensus or technology roadmap concerning selected compound semiconductors. Reasons are given for why there needs to be more wide-spread involvement in technology roadmaps for compound semiconductors. The technical challenges presented by predictive computer simulations, high performance analog-to-digital converters, and RF power devices are three areas from among many for which technology roadmaps would be appropriate.
{"title":"Why you should be interested in technology roadmaps for compound semiconductors","authors":"H. Bennett","doi":"10.1109/GAAS.2001.964337","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964337","url":null,"abstract":"Unlike the silicon semiconductor industry, the compound semiconductor industry does not have an international consensus for a few selected applications and markets to set priorities for investments. The main purpose of this paper is to increase the awareness among industrial decision-makers about the need for an international consensus or technology roadmap concerning selected compound semiconductors. Reasons are given for why there needs to be more wide-spread involvement in technology roadmaps for compound semiconductors. The technical challenges presented by predictive computer simulations, high performance analog-to-digital converters, and RF power devices are three areas from among many for which technology roadmaps would be appropriate.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130966827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964363
R. Leoni, S. Lichwala, J. G. Hunt, C. Whelan, P. Marsh, W. Hoke, T. Kazior
Metamorphic HEMT (MHEMT) technology is capable of providing InP based HEMT performance at GaAs based HEMT levels of manufacturability and cost. This makes the MHEMT an attractive alternative for low noise, high frequency, and wide bandwidth applications. The authors describe the performance of a DC-45 GHz MHEMT traveling wave amplifier (TWA) that is well suited for broadband applications such as 40 Gb/s fiber-optic receivers. The amplifier provides a typical noise figure of 2 dB and output powers in excess of 3 dBm.
{"title":"A DC-45 GHz metamorphic HEMT traveling wave amplifier","authors":"R. Leoni, S. Lichwala, J. G. Hunt, C. Whelan, P. Marsh, W. Hoke, T. Kazior","doi":"10.1109/GAAS.2001.964363","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964363","url":null,"abstract":"Metamorphic HEMT (MHEMT) technology is capable of providing InP based HEMT performance at GaAs based HEMT levels of manufacturability and cost. This makes the MHEMT an attractive alternative for low noise, high frequency, and wide bandwidth applications. The authors describe the performance of a DC-45 GHz MHEMT traveling wave amplifier (TWA) that is well suited for broadband applications such as 40 Gb/s fiber-optic receivers. The amplifier provides a typical noise figure of 2 dB and output powers in excess of 3 dBm.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132560510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964373
D. A. Clark
Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.
{"title":"Evaluation of 4\" InP(Fe) substrates for production of HBTs","authors":"D. A. Clark","doi":"10.1109/GAAS.2001.964373","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964373","url":null,"abstract":"Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4\" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132651052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964359
R. Lai, R. Grundbacher, M. Barsky, A. Oki, M. Siddiqui, B. Pitman, R. Katz, P. Tran, L. Callejo, D. Streit
In this paper we describe single stage and two-stage MMIC power amplifier data at Ka-band. An extremely high P1dB power density of 700 mW/mm and 571 mW/mm were measured for the 1-stage and 2-stage GaAs HEMT MMIC amplifiers respectively. When biased for optimal IP3, 4.5 W/mm and 2.1 W/mm were achieved respectively. The performance of the latter 2-stage MMIC PA is achieved in a very compact design of 4.08 mm/sup 2/ total MMIC area. These are believed to be among the best numbers reported for linear power amplifiers at Ka-band.
{"title":"Extremely high P1dB MMIC amplifiers for Ka-band applications","authors":"R. Lai, R. Grundbacher, M. Barsky, A. Oki, M. Siddiqui, B. Pitman, R. Katz, P. Tran, L. Callejo, D. Streit","doi":"10.1109/GAAS.2001.964359","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964359","url":null,"abstract":"In this paper we describe single stage and two-stage MMIC power amplifier data at Ka-band. An extremely high P1dB power density of 700 mW/mm and 571 mW/mm were measured for the 1-stage and 2-stage GaAs HEMT MMIC amplifiers respectively. When biased for optimal IP3, 4.5 W/mm and 2.1 W/mm were achieved respectively. The performance of the latter 2-stage MMIC PA is achieved in a very compact design of 4.08 mm/sup 2/ total MMIC area. These are believed to be among the best numbers reported for linear power amplifiers at Ka-band.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115066361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964370
Yu Zhang, S. Cherepko, J.C.M. Hwang, S. Halder, K. Radhakrishnan, G. Ng, J. Muraro, A. Bensoussan, J. Cazaux, M. Soulard
RF breakdown characteristics of GaAs MESFETs were found to correlate well with their DC breakdown characteristics, provided sufficient dwell time at the quiescent state with sufficient drain-gate voltage was allowed before the MESFETs were turned on. This implies that, for radar applications in which MESFET power amplifiers are rapidly cycled on and off by pulsing the drain voltage, their performance and reliability may be compromised.
{"title":"RF vs. DC breakdown: implication on pulsed radar applications [MESFETs]","authors":"Yu Zhang, S. Cherepko, J.C.M. Hwang, S. Halder, K. Radhakrishnan, G. Ng, J. Muraro, A. Bensoussan, J. Cazaux, M. Soulard","doi":"10.1109/GAAS.2001.964370","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964370","url":null,"abstract":"RF breakdown characteristics of GaAs MESFETs were found to correlate well with their DC breakdown characteristics, provided sufficient dwell time at the quiescent state with sufficient drain-gate voltage was allowed before the MESFETs were turned on. This implies that, for radar applications in which MESFET power amplifiers are rapidly cycled on and off by pulsing the drain voltage, their performance and reliability may be compromised.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115580495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964342
Sang‐Woong Yoon, Chang-Ho Lee, Min-Gun Kim, Chung-Hwan Kim, Jaejin Lee, J. Laskar, Songcheol Hong
We present a fully integrated 6.7 GHz push-push oscillator MMIC using a cross-coupled differential topology with a capacitive coupling feedback in a commercial GaAs MESFET process. The push-push oscillator shows phase noise of -118.83 dBc/Hz at an offset frequency of 600 kHz with a 3.3 V supply voltage. This low phase-noise performance is comparable to, or better than, the best reported results of 5/spl sim/6 GHz-band oscillators implemented in CMOS and SiGe HBT processes. A 6.4 GHz fundamental oscillator MMIC using the cross-coupled differential topology was also fabricated. The measured phase-noise of the fundamental oscillator is -108 dBc/Hz at an offset frequency of 600 kHz. In addition to the low phase-noise, the push-push oscillator in this paper occupies a compact area of 480/spl times/500 /spl mu/m/sup 2/. To our knowledge, it is the first implementation of a GaAs MESFET-based push-push oscillator MMIC using the cross-coupled differential topology with capacitive coupling feedback. This work is also the first report that shows the low phase-noise performance of the push-push oscillator using the differential topology as compared with that of the fundamental oscillator.
{"title":"A compact GaAs MESFET-based push-push oscillator MMIC using differential topology with low phase-noise performance","authors":"Sang‐Woong Yoon, Chang-Ho Lee, Min-Gun Kim, Chung-Hwan Kim, Jaejin Lee, J. Laskar, Songcheol Hong","doi":"10.1109/GAAS.2001.964342","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964342","url":null,"abstract":"We present a fully integrated 6.7 GHz push-push oscillator MMIC using a cross-coupled differential topology with a capacitive coupling feedback in a commercial GaAs MESFET process. The push-push oscillator shows phase noise of -118.83 dBc/Hz at an offset frequency of 600 kHz with a 3.3 V supply voltage. This low phase-noise performance is comparable to, or better than, the best reported results of 5/spl sim/6 GHz-band oscillators implemented in CMOS and SiGe HBT processes. A 6.4 GHz fundamental oscillator MMIC using the cross-coupled differential topology was also fabricated. The measured phase-noise of the fundamental oscillator is -108 dBc/Hz at an offset frequency of 600 kHz. In addition to the low phase-noise, the push-push oscillator in this paper occupies a compact area of 480/spl times/500 /spl mu/m/sup 2/. To our knowledge, it is the first implementation of a GaAs MESFET-based push-push oscillator MMIC using the cross-coupled differential topology with capacitive coupling feedback. This work is also the first report that shows the low phase-noise performance of the push-push oscillator using the differential topology as compared with that of the fundamental oscillator.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124138052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/gaas.2001.964362
A. Kurdoghlian, M. Mokhtari, C. Fields, M. Wetzel, M. Sokolich, M. Micovic, S. Thomas, B. Shi, M. Sawins
A fully integrated and differential AlInAs/InGaAs HBT voltage controlled oscillator (VCO) with wide tuning range was demonstrated for 40 GHz wireless and optical communication applications. To our knowledge, this 40 GHz IC is the highest frequency fundamental mode fully integrated and differential VCO with wide tuning range ever reported. This VCO delivers a typical differential output power of +5 dBm at a center frequency of 39 GHz with a tuning range of up to 3.5 GHz. Co-planar waveguide (CPW) circuit designs has been employed for the development of the InP HBT MMIC VCOs to reduce chip cost and make them flip chip compatible. The measured phase noise shows -95 dBc/Hz at 1 MHz offset and -75 dBc/Hz at 100 KHz offset. The VCO was realized in a high yield optical lithography triple mesa HBT process. Circuit performance was relatively insensitive to process variation indicating a highly robust circuit design and process.
{"title":"40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT","authors":"A. Kurdoghlian, M. Mokhtari, C. Fields, M. Wetzel, M. Sokolich, M. Micovic, S. Thomas, B. Shi, M. Sawins","doi":"10.1109/gaas.2001.964362","DOIUrl":"https://doi.org/10.1109/gaas.2001.964362","url":null,"abstract":"A fully integrated and differential AlInAs/InGaAs HBT voltage controlled oscillator (VCO) with wide tuning range was demonstrated for 40 GHz wireless and optical communication applications. To our knowledge, this 40 GHz IC is the highest frequency fundamental mode fully integrated and differential VCO with wide tuning range ever reported. This VCO delivers a typical differential output power of +5 dBm at a center frequency of 39 GHz with a tuning range of up to 3.5 GHz. Co-planar waveguide (CPW) circuit designs has been employed for the development of the InP HBT MMIC VCOs to reduce chip cost and make them flip chip compatible. The measured phase noise shows -95 dBc/Hz at 1 MHz offset and -75 dBc/Hz at 100 KHz offset. The VCO was realized in a high yield optical lithography triple mesa HBT process. Circuit performance was relatively insensitive to process variation indicating a highly robust circuit design and process.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116571522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964374
S. Lee, H. Kim, M. Urteaga, S. Krishnan, Y. Wei, M. Dahstrom, M. Rodwell
We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) with power gain cut-off frequency f/sub max/=425 GHz and current gain cut-off frequency f/sub t/=141 GHz using transferred-substrate technology. This is the highest reported f/sub max/ for a DHBT. The breakdown voltage BV/sub CEO/ is 8 V at J/sub C/=5/spl times/10/sup 4/ A/cm/sup 2/ and the DC current gain /spl beta/ is 43.
{"title":"Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz","authors":"S. Lee, H. Kim, M. Urteaga, S. Krishnan, Y. Wei, M. Dahstrom, M. Rodwell","doi":"10.1109/GAAS.2001.964374","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964374","url":null,"abstract":"We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) with power gain cut-off frequency f/sub max/=425 GHz and current gain cut-off frequency f/sub t/=141 GHz using transferred-substrate technology. This is the highest reported f/sub max/ for a DHBT. The breakdown voltage BV/sub CEO/ is 8 V at J/sub C/=5/spl times/10/sup 4/ A/cm/sup 2/ and the DC current gain /spl beta/ is 43.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115810563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964338
D. Barlas
SiGe technology has been evolving over the last decade and a half (Patton et al, 1990; Schuppen et al, 1995; Kasper et al, 1993; Schuppen et al, 1998; Barlas et al, 1999.). During the last few years, there has been much debate with regard to the pros and cons and viability of SiGe based RF devices for wireless applications. This paper describes the design, development and performance of an IS 95/98 dual band tri-mode chip-set using commercially available SiGe bipolar and BiCMOS foundry processes.
SiGe技术在过去15年中不断发展(Patton et al, 1990;Schuppen et al .， 1995;Kasper et al .， 1993;Schuppen et al, 1998;Barlas et al .， 1999)。在过去的几年中，关于无线应用中基于SiGe的射频设备的利弊和可行性存在很多争论。本文介绍了一种IS 95/98双频三模芯片组的设计、开发和性能，该芯片组采用商用SiGe双极和BiCMOS代工工艺。
{"title":"Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set","authors":"D. Barlas","doi":"10.1109/GAAS.2001.964338","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964338","url":null,"abstract":"SiGe technology has been evolving over the last decade and a half (Patton et al, 1990; Schuppen et al, 1995; Kasper et al, 1993; Schuppen et al, 1998; Barlas et al, 1999.). During the last few years, there has been much debate with regard to the pros and cons and viability of SiGe based RF devices for wireless applications. This paper describes the design, development and performance of an IS 95/98 dual band tri-mode chip-set using commercially available SiGe bipolar and BiCMOS foundry processes.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125474760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964366
F. Murgadella, F. Payen, P. Coulon
One of the most specific military needs in microwave power amplification is wide band capability. Indeed, in order to fulfil electronic warfare specifications, amplifiers have to provide (from S- to Ku-band) a high level of output power taking into account Power Added Efficiency (PAE) and cost. Results obtained on MMICs (HBT devices) and TWTAs (MPMs) are presented in the 6-18 GHz instantaneous bandwidth. Current and anticipated results show that systems designer will have to take major improvements into account: this will lead to extensive competition in the near future between these two technologies.
微波功率放大最特殊的军事需求之一是宽带能力。事实上，为了满足电子战规范，放大器必须提供（从 S 波段到 Ku 波段）高水平的输出功率，同时考虑到功率附加效率（PAE）和成本。在 6-18 GHz 瞬时带宽范围内，介绍了 MMIC（HBT 器件）和 TWTA（MPM）取得的成果。当前和预期的结果表明，系统设计者必须考虑到重大改进：这将在不久的将来导致这两种技术之间的广泛竞争。
{"title":"SSPAs & TWTAs: an evolutive situation for electronic warfare applications","authors":"F. Murgadella, F. Payen, P. Coulon","doi":"10.1109/GAAS.2001.964366","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964366","url":null,"abstract":"One of the most specific military needs in microwave power amplification is wide band capability. Indeed, in order to fulfil electronic warfare specifications, amplifiers have to provide (from S- to Ku-band) a high level of output power taking into account Power Added Efficiency (PAE) and cost. Results obtained on MMICs (HBT devices) and TWTAs (MPMs) are presented in the 6-18 GHz instantaneous bandwidth. Current and anticipated results show that systems designer will have to take major improvements into account: this will lead to extensive competition in the near future between these two technologies.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128041385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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