2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529937
R. Świerczyński, K. Urbanski, A. Wymyslowski, K. Jankowski
Avionics is very demanding and specific field of research according to sensor and system design. In systems designed for such applications not only reliability in very low temperatures is key aspect, but also system geometry, energy usage and its weight. During preliminary tests of different rotor blades designs some special measurement of a gas (air) flow type around blades is crucial. Following research is focused on design, implementation and optimization of smart sensor for detection of flow type around rotor blades. Key aspect of design is to integrate sensor system with blade in a way that rotor geometry and rotor mass is virtually not affected. Such requirement implicitly defines also some criteria of sensor system itself. The best solution for such sensor system design is to use small, low-power, batteryless sensor nodes and wireless data transmission. Such design offers not only very good flexibility and ability to expand the system, but also offers good reliability thanks to using local, compact sensor nodes. During a development of such system various optimizations are needed including energy harvesting, microcontroller selection, radio stage design and data transmission protocols. The term "smart sensor" should be understood as a sensor node capable for measuring of pressure and temperature data, capable for processing it in-situ and wirelessly send information (quantitative and qualitative) about gas flow nature. It distinguishes presented design from classical pressure sensor node.
{"title":"Low-power smart sensor for laminar and turbulent flow detection in avionics application","authors":"R. Świerczyński, K. Urbanski, A. Wymyslowski, K. Jankowski","doi":"10.1109/EUROSIME.2013.6529937","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529937","url":null,"abstract":"Avionics is very demanding and specific field of research according to sensor and system design. In systems designed for such applications not only reliability in very low temperatures is key aspect, but also system geometry, energy usage and its weight. During preliminary tests of different rotor blades designs some special measurement of a gas (air) flow type around blades is crucial. Following research is focused on design, implementation and optimization of smart sensor for detection of flow type around rotor blades. Key aspect of design is to integrate sensor system with blade in a way that rotor geometry and rotor mass is virtually not affected. Such requirement implicitly defines also some criteria of sensor system itself. The best solution for such sensor system design is to use small, low-power, batteryless sensor nodes and wireless data transmission. Such design offers not only very good flexibility and ability to expand the system, but also offers good reliability thanks to using local, compact sensor nodes. During a development of such system various optimizations are needed including energy harvesting, microcontroller selection, radio stage design and data transmission protocols. The term \"smart sensor\" should be understood as a sensor node capable for measuring of pressure and temperature data, capable for processing it in-situ and wirelessly send information (quantitative and qualitative) about gas flow nature. It distinguishes presented design from classical pressure sensor node.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121184708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529927
R. Schwerz, K. Meier, M. Roellig, A. Schiessl, Angelika Schingale, K. Wolter, Norbert Meyendorf
Embedding of discrete passives or functional chips as bare dies has been successfully proven in the last years. The embedding technology provides multiple advantages when compared to conventional surface mount technology. As of today multiple possibilities to embed active devices in the substrate exist. One method has been selected here and a fully parameterized finite-element framework has been created to assess its reliability potential. It is shown how it is possible to represent even very complex geometries with features spanning over multiple orders of magnitude, while fulfilling the requirement of reasonable simulation time effort and the possibility to still extracting all necessary local simulation result information. Special attention has been given to the simulation sequence used for the proposed model. Because the embedding technology involves multiple temperature critical production process steps it is advised to transfer the residual stresses of the previous step into the following. This ensures simulation results with high quality. Furthermore it is proposed to update the geometries according to the process calculations. In this work a feasible modeling approach for the underfill curing process is given. With the proposed framework the structural behavior of an embedded IC component both during the manufacturing stage and under environmental loading conditions can be investigated. This will facilitate future design choices and help expose the reliability potential of the novel embedding technology compared to conventional SMT.
{"title":"Evaluation of embedded IC approach for automotive application","authors":"R. Schwerz, K. Meier, M. Roellig, A. Schiessl, Angelika Schingale, K. Wolter, Norbert Meyendorf","doi":"10.1109/EUROSIME.2013.6529927","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529927","url":null,"abstract":"Embedding of discrete passives or functional chips as bare dies has been successfully proven in the last years. The embedding technology provides multiple advantages when compared to conventional surface mount technology. As of today multiple possibilities to embed active devices in the substrate exist. One method has been selected here and a fully parameterized finite-element framework has been created to assess its reliability potential. It is shown how it is possible to represent even very complex geometries with features spanning over multiple orders of magnitude, while fulfilling the requirement of reasonable simulation time effort and the possibility to still extracting all necessary local simulation result information. Special attention has been given to the simulation sequence used for the proposed model. Because the embedding technology involves multiple temperature critical production process steps it is advised to transfer the residual stresses of the previous step into the following. This ensures simulation results with high quality. Furthermore it is proposed to update the geometries according to the process calculations. In this work a feasible modeling approach for the underfill curing process is given. With the proposed framework the structural behavior of an embedded IC component both during the manufacturing stage and under environmental loading conditions can be investigated. This will facilitate future design choices and help expose the reliability potential of the novel embedding technology compared to conventional SMT.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122702364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529911
Bo Sun, S. Koh, C. Yuan, Xuejun Fan, Guoqi Zhang
This paper proposes an isolated component accelerated lifetime testing of high-voltage SSL driver. In this method, the most critical component(s) will be isolated from the rest, and critical stress will be applied to these components to estimate the lifetime. Although circuit modification is unavoidable, this testing method can minimize failure interactions between components and testing duration for the system. Thus, compared to the conventional accelerated testing method, this method could achieve shorter test duration. In the configuration of high-voltage LED, the electrolytic capacitors have been selected from the linear driver configuration. As one of most significant failure mechanisms, the effects of high temperature degradation of electrolytic capacitors to the entire system were investigated in this test. To quantify these effects, the changes in luminous flux and power consumption over time were measured. By analysis of all these output data, the relationship between the system's outputs and temperature of electrolytic capacitor can be found. For the high-voltage LED system, this relationship is a required condition for the accurate system reliability prediction.
{"title":"Accelerated lifetime test for isolated components in linear drivers of high-voltage LED system","authors":"Bo Sun, S. Koh, C. Yuan, Xuejun Fan, Guoqi Zhang","doi":"10.1109/EUROSIME.2013.6529911","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529911","url":null,"abstract":"This paper proposes an isolated component accelerated lifetime testing of high-voltage SSL driver. In this method, the most critical component(s) will be isolated from the rest, and critical stress will be applied to these components to estimate the lifetime. Although circuit modification is unavoidable, this testing method can minimize failure interactions between components and testing duration for the system. Thus, compared to the conventional accelerated testing method, this method could achieve shorter test duration. In the configuration of high-voltage LED, the electrolytic capacitors have been selected from the linear driver configuration. As one of most significant failure mechanisms, the effects of high temperature degradation of electrolytic capacitors to the entire system were investigated in this test. To quantify these effects, the changes in luminous flux and power consumption over time were measured. By analysis of all these output data, the relationship between the system's outputs and temperature of electrolytic capacitor can be found. For the high-voltage LED system, this relationship is a required condition for the accurate system reliability prediction.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123037645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529968
A. Damian, R. Poelma, H. V. van Zeijl, G. Zhang
Techniques for the bonding of wafers and dies at low temperature are investigated. Controlled wet etching using acids is used to bond SiO2-SiO2 and Al-Al chips at room temperature. The bond strength is evaluated using die-shear tests. Infrared imaging and SEM analysis are used to inspect the bonding interface. The results are compared with data from fusion bonding experiments. Relatively high bond bond strengths for SiO2 and Al-terminated chips are achieved using bonding at room temperature.
{"title":"Low temperature hybrid wafer bonding for 3D integration","authors":"A. Damian, R. Poelma, H. V. van Zeijl, G. Zhang","doi":"10.1109/EUROSIME.2013.6529968","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529968","url":null,"abstract":"Techniques for the bonding of wafers and dies at low temperature are investigated. Controlled wet etching using acids is used to bond SiO2-SiO2 and Al-Al chips at room temperature. The bond strength is evaluated using die-shear tests. Infrared imaging and SEM analysis are used to inspect the bonding interface. The results are compared with data from fusion bonding experiments. Relatively high bond bond strengths for SiO2 and Al-terminated chips are achieved using bonding at room temperature.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116848727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529913
Kai Zhang, Xinfeng Zhang, Zhibo Chen, Hongye Sun, M. Yuen, M. Zhang, Cheuk Yan Chan, Yuhua Lee, Lisa Liu, Sean Ho, Guoqi Zhang
Die attach material (DA) is important to heat dissipation and light output of solid state lighting (SSL) packages. Even though high thermal conductivity benefits to reduce the bulk thermal resistance of die attach, high viscosity will increase the contact thermal resistance in the packages. To face such a dilemma, it is of desirable to develop new technique to increase the filler loading without sacrificing the rheological properties. In this paper, we propose surface treatment of fillers with PDMS to keep the viscosity at a relatively low level while achieve high thermal performance. It has been demonstrated that surface-grafting can significantly reduce the viscosity of the die attach and increase the filler loading. The thermal concutvity of the die attach increased with the increase of the filler loading. However, there wasn't any percolation-like transition of thermal conductivity observed at high loading up to 50%, which might limit achieving better thermal performance in LED packages through surface-grafting technique. It is expected that the decease of percolation threshold of die attach materials and increase of percolative thermal conductivity are the complementing approach to fully exploit the benefit from surface grafting techniques to enhance the thermal performance.
{"title":"Thermal improvement of die attach by using PDMS-grafted particles as filler and Its application in solid state lighting","authors":"Kai Zhang, Xinfeng Zhang, Zhibo Chen, Hongye Sun, M. Yuen, M. Zhang, Cheuk Yan Chan, Yuhua Lee, Lisa Liu, Sean Ho, Guoqi Zhang","doi":"10.1109/EUROSIME.2013.6529913","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529913","url":null,"abstract":"Die attach material (DA) is important to heat dissipation and light output of solid state lighting (SSL) packages. Even though high thermal conductivity benefits to reduce the bulk thermal resistance of die attach, high viscosity will increase the contact thermal resistance in the packages. To face such a dilemma, it is of desirable to develop new technique to increase the filler loading without sacrificing the rheological properties. In this paper, we propose surface treatment of fillers with PDMS to keep the viscosity at a relatively low level while achieve high thermal performance. It has been demonstrated that surface-grafting can significantly reduce the viscosity of the die attach and increase the filler loading. The thermal concutvity of the die attach increased with the increase of the filler loading. However, there wasn't any percolation-like transition of thermal conductivity observed at high loading up to 50%, which might limit achieving better thermal performance in LED packages through surface-grafting technique. It is expected that the decease of percolation threshold of die attach materials and increase of percolative thermal conductivity are the complementing approach to fully exploit the benefit from surface grafting techniques to enhance the thermal performance.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"17 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120832233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529896
J. Kludt, K. Weide-Zaage, M. Ackermann, V. Hein
For high temperature automotive applications a 0.35 μm aluminium CMOS is one of the common technology processes. In this process Ti/Al/Ti/TiN stacks are used as metallization. These aluminium stacks form TiAl3 layers during the following annealing step. The thermal-electrical and thermo-mechanical properties of this metallization is different from titanium or aluminium. Hence the forming TiAl3 layer influences the thermalelectrical, thermo-mechanical behaviour and reduces the current capability. The influence of the deposition temperatures on the thermal-electrical behaviour is investigated. Three different deposition temperatures of 150 °C, 250 °C and 470 °C were considered. Also the behaviour of anisotropic etching was investigated with regard to the reduced current capability.
{"title":"Investigation of temperature gradients with regard to thermomigration in aluminium metallizations","authors":"J. Kludt, K. Weide-Zaage, M. Ackermann, V. Hein","doi":"10.1109/EUROSIME.2013.6529896","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529896","url":null,"abstract":"For high temperature automotive applications a 0.35 μm aluminium CMOS is one of the common technology processes. In this process Ti/Al/Ti/TiN stacks are used as metallization. These aluminium stacks form TiAl3 layers during the following annealing step. The thermal-electrical and thermo-mechanical properties of this metallization is different from titanium or aluminium. Hence the forming TiAl3 layer influences the thermalelectrical, thermo-mechanical behaviour and reduces the current capability. The influence of the deposition temperatures on the thermal-electrical behaviour is investigated. Three different deposition temperatures of 150 °C, 250 °C and 470 °C were considered. Also the behaviour of anisotropic etching was investigated with regard to the reduced current capability.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117337653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529989
N. Strusevich, C. Bailey, S. Costello, M. Patel, M. Desmulliez
For numerical simulation of electrodeposition in small features, we have developed a novel method that allows an explicit tracking of the interface between the electrolyte and the deposited metal. The method is implemented in the CFD package PHYSICA and validated by comparing the delivered simulation results with those achieved by real-life measurements and/or obtained by another piece of software, COMSOL Multiphysics using a standard electrodeposition module.
{"title":"Numerical modeling of the electroplating process for microvia fabrication","authors":"N. Strusevich, C. Bailey, S. Costello, M. Patel, M. Desmulliez","doi":"10.1109/EUROSIME.2013.6529989","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529989","url":null,"abstract":"For numerical simulation of electrodeposition in small features, we have developed a novel method that allows an explicit tracking of the interface between the electrolyte and the deposited metal. The method is implemented in the CFD package PHYSICA and validated by comparing the delivered simulation results with those achieved by real-life measurements and/or obtained by another piece of software, COMSOL Multiphysics using a standard electrodeposition module.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115523739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529890
M. Pustan, C. Bîrleanu, C. Dudescu, O. Belcin
The scope of this paper is to analyze the temperature effect on tribological and mechanical properties of materials used in the fabrication of the flexible components from Microelectromechanical Systems (MEMS). Using a temperature control system and an atomic force microscope (AFM) with a nanoindentation module, the changes of the mechanical and tribological properties of MEMS material as a function of temperature are investigated. The temperature has influence on the tribological and mechanical behaviors of materials based on thermal relaxation. Firstly, the temperature effect on hardness and contact stiffness of MEMS materials is investigated. The coupling of the strain field to a temperature field provides an energy dissipation mechanism that allows the material to relax. In the case of investigated MEMS materials, the relaxation strength to be considered is that of the modulus of elasticity with influence on contact stiffness and hardness. Secondly, the temperature influence on tribological properties is determined. The tribological investigation of interest is the friction force measurement as a function of temperature. The direct measurement of the temperature effect on tribological and mechanical behavior of MEMS materials is important in order to improve the reliability design of MEMS and to increase the lifetime of microstructures from MEMS applications.
{"title":"Temperature effect on tribological and mechanical properties of MEMS","authors":"M. Pustan, C. Bîrleanu, C. Dudescu, O. Belcin","doi":"10.1109/EUROSIME.2013.6529890","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529890","url":null,"abstract":"The scope of this paper is to analyze the temperature effect on tribological and mechanical properties of materials used in the fabrication of the flexible components from Microelectromechanical Systems (MEMS). Using a temperature control system and an atomic force microscope (AFM) with a nanoindentation module, the changes of the mechanical and tribological properties of MEMS material as a function of temperature are investigated. The temperature has influence on the tribological and mechanical behaviors of materials based on thermal relaxation. Firstly, the temperature effect on hardness and contact stiffness of MEMS materials is investigated. The coupling of the strain field to a temperature field provides an energy dissipation mechanism that allows the material to relax. In the case of investigated MEMS materials, the relaxation strength to be considered is that of the modulus of elasticity with influence on contact stiffness and hardness. Secondly, the temperature influence on tribological properties is determined. The tribological investigation of interest is the friction force measurement as a function of temperature. The direct measurement of the temperature effect on tribological and mechanical behavior of MEMS materials is important in order to improve the reliability design of MEMS and to increase the lifetime of microstructures from MEMS applications.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129472724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529990
Michael Edwards, K. Brinkfeldt
Thermal electric modules (TEMs) utilise the Seebeck effect that occurs in thermally-insulating semiconductors to generate electricity from a sufficient thermal gradient. This has specific applications in the automotive industry where TEMs can be used as energy harvesters in vehicle engines, exhaust systems and large scale industrial applications, leading to lower greenhouse emissions and fuel consumption [1]. In this work, the proposed thermo-electric (TE) material for the TEM is nanostructured SiGe, designed to enhance TE performance. The TEM needs to ultimately be able to operate from ~40°C on the cold side of the device up to a maximum of at least 650°C on the hot side. Using the thermo-mechanical models developed, thermo-mechanical loads have been modelled. The modelling results have then been used to select the packaging materials to ensure that the thermo-mechanical stresses on the TEM are manageable. The thermo-mechanical simulations were used to determine the best combination materials used for packaging and found that using W/AlN/W substrates on both the hot side and cold side of the module produces a maximum stress of ~130 MPa when 650°C is applied to the hot side and 45°C is applied to the cold side, which is below the AlN flexural stress of 600 MPa [2]. This indicates that it may be possible to produce a high temperature TEM that does not crack at the first instance when a large thermal gradient is applied.
{"title":"Thermo-mechanical modelling and design of SiGe-based thermo-electric modules for high temperature applications","authors":"Michael Edwards, K. Brinkfeldt","doi":"10.1109/EUROSIME.2013.6529990","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529990","url":null,"abstract":"Thermal electric modules (TEMs) utilise the Seebeck effect that occurs in thermally-insulating semiconductors to generate electricity from a sufficient thermal gradient. This has specific applications in the automotive industry where TEMs can be used as energy harvesters in vehicle engines, exhaust systems and large scale industrial applications, leading to lower greenhouse emissions and fuel consumption [1]. In this work, the proposed thermo-electric (TE) material for the TEM is nanostructured SiGe, designed to enhance TE performance. The TEM needs to ultimately be able to operate from ~40°C on the cold side of the device up to a maximum of at least 650°C on the hot side. Using the thermo-mechanical models developed, thermo-mechanical loads have been modelled. The modelling results have then been used to select the packaging materials to ensure that the thermo-mechanical stresses on the TEM are manageable. The thermo-mechanical simulations were used to determine the best combination materials used for packaging and found that using W/AlN/W substrates on both the hot side and cold side of the module produces a maximum stress of ~130 MPa when 650°C is applied to the hot side and 45°C is applied to the cold side, which is below the AlN flexural stress of 600 MPa [2]. This indicates that it may be possible to produce a high temperature TEM that does not crack at the first instance when a large thermal gradient is applied.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129714706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529950
H. Kock, S. de Filippis, M. Nelhiebel, M. Glavanovics, M. Kaltenbacher
In order to investigate the reliability of power semiconductors under overload conditions, a detailed thermal analysis concerning temperature distribution and three dimensional heat flow of MOSFET devices is required. Thermal finite element simulation methods have the potential to provide this information but are limited due to computational constraints when approaching multi-scale models. Unfortunately, a typical power MOSFET device has a highly complex layer structure close to the junction in the sub-micrometer range while in lateral direction the active region of the MOSFET extends to the millimeter range. In that case, the standard FE method is limited due to its requirement of conforming meshes. The methods presented in this paper introduce homogenization concepts as well as nonmatching grid techniques to overcome this limitation. With the aid of homogenization methods, effective orthotropic material parameters are obtained. Nonmatching grids allow to embed complex device structures, such as temperature sensors, in full detail within the macroscopic full chip model. Both concepts are applied and verified on a dedicated power semiconductor test structure.
{"title":"Multiscale FE modeling concepts applied to microelectronic device simulations","authors":"H. Kock, S. de Filippis, M. Nelhiebel, M. Glavanovics, M. Kaltenbacher","doi":"10.1109/EUROSIME.2013.6529950","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529950","url":null,"abstract":"In order to investigate the reliability of power semiconductors under overload conditions, a detailed thermal analysis concerning temperature distribution and three dimensional heat flow of MOSFET devices is required. Thermal finite element simulation methods have the potential to provide this information but are limited due to computational constraints when approaching multi-scale models. Unfortunately, a typical power MOSFET device has a highly complex layer structure close to the junction in the sub-micrometer range while in lateral direction the active region of the MOSFET extends to the millimeter range. In that case, the standard FE method is limited due to its requirement of conforming meshes. The methods presented in this paper introduce homogenization concepts as well as nonmatching grid techniques to overcome this limitation. With the aid of homogenization methods, effective orthotropic material parameters are obtained. Nonmatching grids allow to embed complex device structures, such as temperature sensors, in full detail within the macroscopic full chip model. Both concepts are applied and verified on a dedicated power semiconductor test structure.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130090759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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