2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529982
P. Liu, J. Zhang, R. Sokolovskij, H. V. van Zeijl, B. Mimoun, G. Zhang
Wafer Level Packaging (WLP) technology for Solid State Lighting application is regarded as great potential for cost reduction. Rigid/Flexible/Rigid (RFR) substrate that is capable of transforming WLP devices from 2-dimentional into 3-dimentional devices is of enormous interest in SSL industry. In this work, numerical simulations were performed to discover the optimized geometry of interconnects in the newly developed RFR substrate to meet the harsh requirements set for SSL products. The relations of maximum temperatures in the substrate as a function of interconnect geometry and bending angle at different current levels were derived. Moreover, by using the derived relations, geometric effects on electromigration behaviours of interconnect were investigated. Suggestions were given for optimizing the geometry of interconnects and avoiding over-bending of the substrate.
{"title":"Geometric optimization of high performance interconnect of Rigid/Flexible/Rigid substrate for Wafer Level Packaging in Solid State Lighting applications by numerical simulations","authors":"P. Liu, J. Zhang, R. Sokolovskij, H. V. van Zeijl, B. Mimoun, G. Zhang","doi":"10.1109/EUROSIME.2013.6529982","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529982","url":null,"abstract":"Wafer Level Packaging (WLP) technology for Solid State Lighting application is regarded as great potential for cost reduction. Rigid/Flexible/Rigid (RFR) substrate that is capable of transforming WLP devices from 2-dimentional into 3-dimentional devices is of enormous interest in SSL industry. In this work, numerical simulations were performed to discover the optimized geometry of interconnects in the newly developed RFR substrate to meet the harsh requirements set for SSL products. The relations of maximum temperatures in the substrate as a function of interconnect geometry and bending angle at different current levels were derived. Moreover, by using the derived relations, geometric effects on electromigration behaviours of interconnect were investigated. Suggestions were given for optimizing the geometry of interconnects and avoiding over-bending of the substrate.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128814478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529991
D. Vogel, E. Auerswald, J. Auersperg, S. Rzepka, B. Michel
The paper reviews some of the currently used strain / stress measurement tools developed for rather local application - deformation and stress measurement by Digital Image Correlation (DIC) techniques, microRaman, and electron diffraction for stress measurement. The selected methods possess spatial measurement resolutions of 1 μm or better, which makes them ideal to meet typical demands for strain and stress analyses on objects with high gradients, like e.g. advanced MEMS, semiconductor devices, and components of 3D IC integration. DIC methods applied to stress measurement, which have been seized past years by different labs, are described in more detail. Examples of stress determination on TSVs by DIC and microRaman approaches illustrate the utilization of these methods to analyze stresses in electronics components of current interest. Finally, a brief comparison between the DIC, microRaman and electron diffraction techniques (EBSD) is given.
{"title":"Measuring techniques for deformation and stress analysis in micro-dimensions","authors":"D. Vogel, E. Auerswald, J. Auersperg, S. Rzepka, B. Michel","doi":"10.1109/EUROSIME.2013.6529991","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529991","url":null,"abstract":"The paper reviews some of the currently used strain / stress measurement tools developed for rather local application - deformation and stress measurement by Digital Image Correlation (DIC) techniques, microRaman, and electron diffraction for stress measurement. The selected methods possess spatial measurement resolutions of 1 μm or better, which makes them ideal to meet typical demands for strain and stress analyses on objects with high gradients, like e.g. advanced MEMS, semiconductor devices, and components of 3D IC integration. DIC methods applied to stress measurement, which have been seized past years by different labs, are described in more detail. Examples of stress determination on TSVs by DIC and microRaman approaches illustrate the utilization of these methods to analyze stresses in electronics components of current interest. Finally, a brief comparison between the DIC, microRaman and electron diffraction techniques (EBSD) is given.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130818903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529932
M. Schulz, M. Springborn, J. Keller, B. Michel, B. Wunderle
In this paper, the Advanced Mixed-Mode Bending Test (AMB) is presented. The AMB is an experimental method to determine the effects on the critical crack propagation in bi-material interfaces that exist in electronic packages. Target in the development of this test rig was a quick and cost-effective data collection in addition to easier handling of samples. By two independent load components, shearing and opening of the boundary layer, a large range of the mode-angle can be determined. The test rig is designed for bimaterial beams, which are industrially manufactured, e.g. produced through laser cutting. Another preparation of the test-specimen is not necessary. It can also be used cutouts from actual products. Thus it is possible to examine influences of the production line.
{"title":"Advanced mixed-mode bending test Experimental-numerical characterization of the critical energy release rate Gc including Mixed-Mode-Angle Ψ in interfaces under independent external loads","authors":"M. Schulz, M. Springborn, J. Keller, B. Michel, B. Wunderle","doi":"10.1109/EUROSIME.2013.6529932","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529932","url":null,"abstract":"In this paper, the Advanced Mixed-Mode Bending Test (AMB) is presented. The AMB is an experimental method to determine the effects on the critical crack propagation in bi-material interfaces that exist in electronic packages. Target in the development of this test rig was a quick and cost-effective data collection in addition to easier handling of samples. By two independent load components, shearing and opening of the boundary layer, a large range of the mode-angle can be determined. The test rig is designed for bimaterial beams, which are industrially manufactured, e.g. produced through laser cutting. Another preparation of the test-specimen is not necessary. It can also be used cutouts from actual products. Thus it is possible to examine influences of the production line.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126112754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1016/j.microrel.2014.02.018
J. Auersperg, R. Dudek, R. Jordan, O. Bochow-Neß, S. Rzepka, B. Michel
{"title":"On the crack and delamination risk optimization of a Si-interposer for LED packaging","authors":"J. Auersperg, R. Dudek, R. Jordan, O. Bochow-Neß, S. Rzepka, B. Michel","doi":"10.1016/j.microrel.2014.02.018","DOIUrl":"https://doi.org/10.1016/j.microrel.2014.02.018","url":null,"abstract":"","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126979192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529952
J. Al Ahmar, S. Wiese
The goal in this analysis is to undestand more about the progressing of preexisting cracks in silicon solar cells under different enviromental loads. This enables to estimate critical crack sizes and reduce the losses and to improve realibility. In this work we present a 2D finite element model of encapsulated silicon solar cells containing cracks on critical positions. Cracks were modelled using special elements in ANSYS and the enviromental load caused by the thermal cycle is applied. In order to execute the evaluation of crack propagation on critical areas in the cross section of the solar cell the fracture mechanic theory is used and corresponding parameters are calculated.
{"title":"Analysis and simulation of cracks and micro cracks in PV cells","authors":"J. Al Ahmar, S. Wiese","doi":"10.1109/EUROSIME.2013.6529952","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529952","url":null,"abstract":"The goal in this analysis is to undestand more about the progressing of preexisting cracks in silicon solar cells under different enviromental loads. This enables to estimate critical crack sizes and reduce the losses and to improve realibility. In this work we present a 2D finite element model of encapsulated silicon solar cells containing cracks on critical positions. Cracks were modelled using special elements in ANSYS and the enviromental load caused by the thermal cycle is applied. In order to execute the evaluation of crack propagation on critical areas in the cross section of the solar cell the fracture mechanic theory is used and corresponding parameters are calculated.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127015273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529964
F. Kraemer, S. Wiese
This paper is focused on the reliability performance of novel back contact solar modules. Tn this study the mechanical integrity of the interconnect structures of back contact modules is analyzed by FEM-simulations. The solar module lifetime is limited by mechanical stresses which arise from temperature cycles. These temperature cycles are caused by day to night shifts. The reliability of photovoltaic modules under these load conditions is tested by the IEC standard 61215. The according temperature profile is created for the FEM simulations and tested with the novel back contact solar modules. A classic module assembly applying H-patterned cells is taken as reference case. The result evaluation shows high localized stresses in the interconnection structures of both module assemblies. However, these localized stresses do not cause ultimate cracks of the interconnection structures and thus may help to reduce the stress in adjacent sections of the assembly. The goal of the study is to compare the mechanical behavior of these two types of photovoltaic modules. The results of this investigation figure out, where are critical structural elements in the photovoltaic modules.
{"title":"FEM simulations of back contact solar modules during temperature cycling","authors":"F. Kraemer, S. Wiese","doi":"10.1109/EUROSIME.2013.6529964","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529964","url":null,"abstract":"This paper is focused on the reliability performance of novel back contact solar modules. Tn this study the mechanical integrity of the interconnect structures of back contact modules is analyzed by FEM-simulations. The solar module lifetime is limited by mechanical stresses which arise from temperature cycles. These temperature cycles are caused by day to night shifts. The reliability of photovoltaic modules under these load conditions is tested by the IEC standard 61215. The according temperature profile is created for the FEM simulations and tested with the novel back contact solar modules. A classic module assembly applying H-patterned cells is taken as reference case. The result evaluation shows high localized stresses in the interconnection structures of both module assemblies. However, these localized stresses do not cause ultimate cracks of the interconnection structures and thus may help to reduce the stress in adjacent sections of the assembly. The goal of the study is to compare the mechanical behavior of these two types of photovoltaic modules. The results of this investigation figure out, where are critical structural elements in the photovoltaic modules.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"498 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126116532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529967
G. Schondelmaier, S. Hartmann, D. May, A. Shaporin, S. Voigt, R. D. Rodriguez, O. Gordan, D. Zahn, J. Mehner, K. Hiller, B. Wunderle
For properties characterization of nanostructured materials and simultaneously to predict their reliability a tensile testing system consisting of a thermal actuator and a lateral nano-Newton force piezoresistive sensor is presented. The implementation of a piezoresistive load sensor in a MEMS-based tensile testing system can be regarded as an innovative and ultrasensitive method to continuously observe the specimen deformation while simultaneously measuring the applied load electronically with nano-Newton resolution. The primary technique that we have used for the fabrication of these systems is Bonding and Deep Reactive Ion Etching (BDRIE) applied on SOI wafers.
{"title":"Piezoresistive force sensor and thermal actuators usage as applications to nanosystems manipulation: Design, simulations, technology and experiments","authors":"G. Schondelmaier, S. Hartmann, D. May, A. Shaporin, S. Voigt, R. D. Rodriguez, O. Gordan, D. Zahn, J. Mehner, K. Hiller, B. Wunderle","doi":"10.1109/EUROSIME.2013.6529967","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529967","url":null,"abstract":"For properties characterization of nanostructured materials and simultaneously to predict their reliability a tensile testing system consisting of a thermal actuator and a lateral nano-Newton force piezoresistive sensor is presented. The implementation of a piezoresistive load sensor in a MEMS-based tensile testing system can be regarded as an innovative and ultrasensitive method to continuously observe the specimen deformation while simultaneously measuring the applied load electronically with nano-Newton resolution. The primary technique that we have used for the fabrication of these systems is Bonding and Deep Reactive Ion Etching (BDRIE) applied on SOI wafers.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121410410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529918
A. Renault, F. Molière, C. Munier
System in Package components (SiP) are nowadays widely used in commercial telecommunication applications. Based on More than Moore approach, SiP components consists in increasing the number of integrated circuits/packages enclosed in a single module. The main advantage of those technologies remains the possibility to densify the number of Commercial Off-The-Shelf (COTS) subsystems at component level rather than at board level. However, if the asset of SiP components seems to be obvious in term of equipment design, their reliability is still questioning regarding aeronautic environments, which are characterized by harsh and long term stresses. Furthermore, due to their quite novelty, there is no feedback about SiP devices. As a consequence, it becomes mandatory for aeronautic end users to assess in phase lead, the reliability of those devices prior to use them in electronic equipment. On this view, the goal of this paper is based on two pillars. First of all, a general methodology devoted to the component selection as a function of the mission profile and the technology will be presented. In order to underline the method, two configurations of SiP components will be studied according to two aeronautic mission profiles. Those profiles typically concern airplane and helicopter applications and will be described by the means of thermo-mechanical and vibration stresses. Then, some finite element modelling and simulations will be performed at the 2nd reliability level in order to evaluate the impact of SiP architectures on the solder joints integrity. The targeted parameters investigated in this study will be the equivalent stress, the strain and deformation. Next, either the number of cycles or the time to failure will be determined for all SiP configurations and compared to the aeronautic reliability specifications at 2nd reliability level. This approach enables an end-user component to select a suitable SiP device for his application if reliability results got by simulations successfully passes the aeronautic specifications. However, reliability results are strongly linked to the design and process parameters such as solder joints, packaging dimensions and board design or the choice of process assembly for instance. Considering both the lack of design standards and the high number of SiP configurations available on market, guidelines do not exist for end user to evaluate the reliability of commercial SiP. Based on the studied configurations, this paper will supply some design rules of SiP ball grid array architectures at 2nd level of reliability in order to fulfil the reliability specifications. This study has been performed in the framework of the ENIAC project entitled ESiP and is a result of a European collaboration between EADS, Siemens and Murata Electronics Oy.
{"title":"Reliability investigation of system in package devices toward aeronautic requirements: Methodology and application","authors":"A. Renault, F. Molière, C. Munier","doi":"10.1109/EUROSIME.2013.6529918","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529918","url":null,"abstract":"System in Package components (SiP) are nowadays widely used in commercial telecommunication applications. Based on More than Moore approach, SiP components consists in increasing the number of integrated circuits/packages enclosed in a single module. The main advantage of those technologies remains the possibility to densify the number of Commercial Off-The-Shelf (COTS) subsystems at component level rather than at board level. However, if the asset of SiP components seems to be obvious in term of equipment design, their reliability is still questioning regarding aeronautic environments, which are characterized by harsh and long term stresses. Furthermore, due to their quite novelty, there is no feedback about SiP devices. As a consequence, it becomes mandatory for aeronautic end users to assess in phase lead, the reliability of those devices prior to use them in electronic equipment. On this view, the goal of this paper is based on two pillars. First of all, a general methodology devoted to the component selection as a function of the mission profile and the technology will be presented. In order to underline the method, two configurations of SiP components will be studied according to two aeronautic mission profiles. Those profiles typically concern airplane and helicopter applications and will be described by the means of thermo-mechanical and vibration stresses. Then, some finite element modelling and simulations will be performed at the 2nd reliability level in order to evaluate the impact of SiP architectures on the solder joints integrity. The targeted parameters investigated in this study will be the equivalent stress, the strain and deformation. Next, either the number of cycles or the time to failure will be determined for all SiP configurations and compared to the aeronautic reliability specifications at 2nd reliability level. This approach enables an end-user component to select a suitable SiP device for his application if reliability results got by simulations successfully passes the aeronautic specifications. However, reliability results are strongly linked to the design and process parameters such as solder joints, packaging dimensions and board design or the choice of process assembly for instance. Considering both the lack of design standards and the high number of SiP configurations available on market, guidelines do not exist for end user to evaluate the reliability of commercial SiP. Based on the studied configurations, this paper will supply some design rules of SiP ball grid array architectures at 2nd level of reliability in order to fulfil the reliability specifications. This study has been performed in the framework of the ENIAC project entitled ESiP and is a result of a European collaboration between EADS, Siemens and Murata Electronics Oy.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114539054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529943
J. Heilmann, B. Wunderle, S. G. Kumar, O. Hoelck, H. Walter, O. Wittler, G. Engelmann, M. Wolf, G. Beer, K. Pressel
Through encapsulant vias (TEVs) are an interconnect technology which enables 3D stacking and double sided re-routing of packages encapsulated with epoxy molding compound. These interconnects are formed by Cu-plated holes through the encapsulant and can typically be routed by an RDL (redistribution layer). In order to enable prolonged function of these interconnects, thermomechanical reliability has to be assured. Dedicated stress tests have to be conducted to evaluate lifetime under relevant testing conditions, then failure mechanisms have to be identified, understood and quantitatively condensed into a lifetime model to predict reliability for future designs. In order to assure a short time to market, accelerated tests (and corresponding acceleration factors) are urgently needed by industry and are the holy grail of reliability as an academic discipline. The idea presented in this paper is to substitute lengthy thermal cycling tests by results obtained by rapid isothermal fatigue tests at different temperatures and establish a correlation between both of them. Based on physics of failure principles, the applicability and viability of such a concept then is evaluated and discussed.In conclusion, this work shows a consistent approach for acceleration of the design for reliability procedure in system integration. It is based on the now possible rapid generation of a lifetime model by thin metal layer samples which are easily manufacturable with the same technology as the TEVs. More data is needed to confirm the failure mechanisms in TEVs, reproducible samples for thermal cycling and to validate the applicability of the method also to other metal layers used in the electronic packaging industry.
{"title":"Reliability of Cu-plated through encapsulant vias (TEV) for 3D-integration","authors":"J. Heilmann, B. Wunderle, S. G. Kumar, O. Hoelck, H. Walter, O. Wittler, G. Engelmann, M. Wolf, G. Beer, K. Pressel","doi":"10.1109/EUROSIME.2013.6529943","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529943","url":null,"abstract":"Through encapsulant vias (TEVs) are an interconnect technology which enables 3D stacking and double sided re-routing of packages encapsulated with epoxy molding compound. These interconnects are formed by Cu-plated holes through the encapsulant and can typically be routed by an RDL (redistribution layer). In order to enable prolonged function of these interconnects, thermomechanical reliability has to be assured. Dedicated stress tests have to be conducted to evaluate lifetime under relevant testing conditions, then failure mechanisms have to be identified, understood and quantitatively condensed into a lifetime model to predict reliability for future designs. In order to assure a short time to market, accelerated tests (and corresponding acceleration factors) are urgently needed by industry and are the holy grail of reliability as an academic discipline. The idea presented in this paper is to substitute lengthy thermal cycling tests by results obtained by rapid isothermal fatigue tests at different temperatures and establish a correlation between both of them. Based on physics of failure principles, the applicability and viability of such a concept then is evaluated and discussed.In conclusion, this work shows a consistent approach for acceleration of the design for reliability procedure in system integration. It is based on the now possible rapid generation of a lifetime model by thin metal layer samples which are easily manufacturable with the same technology as the TEVs. More data is needed to confirm the failure mechanisms in TEVs, reproducible samples for thermal cycling and to validate the applicability of the method also to other metal layers used in the electronic packaging industry.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127044545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1016/j.microrel.2014.02.016
E. Parsa, Hao Huang, A. Dasgupta
{"title":"Multi-physics simulations for combined temperature/humidity cycling of potted electronic assemblies","authors":"E. Parsa, Hao Huang, A. Dasgupta","doi":"10.1016/j.microrel.2014.02.016","DOIUrl":"https://doi.org/10.1016/j.microrel.2014.02.016","url":null,"abstract":"","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124879821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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