2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529969
B. Platek, T. Falat, J. Felba
In this paper study on algorithms for evaluation the thermal conductivity of nanomaterials by using molecular dynamics technique was presented. First one is based on algorithm proposed by Ikeshoji and Hafskjold, the second one is developed by authors. As a reference material the boron nitride in hexagonal form was taken into consideration. The heat transfer was studied in-plane of BN layers as well as through-plane. From the results can be concluded that the Ikeshoji's algorithm was better for the structure with low thermal conductivity (through-plane of BN) while for the structure with higher conductivity (in-plane of BN) better results gave algorithm proposed by authors.
{"title":"Study on thermal conductivity of boron nitride in hexagonal structure in atomistic scale by using Non-Equilibrium Molecular Dynamics technique","authors":"B. Platek, T. Falat, J. Felba","doi":"10.1109/EUROSIME.2013.6529969","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529969","url":null,"abstract":"In this paper study on algorithms for evaluation the thermal conductivity of nanomaterials by using molecular dynamics technique was presented. First one is based on algorithm proposed by Ikeshoji and Hafskjold, the second one is developed by authors. As a reference material the boron nitride in hexagonal form was taken into consideration. The heat transfer was studied in-plane of BN layers as well as through-plane. From the results can be concluded that the Ikeshoji's algorithm was better for the structure with low thermal conductivity (through-plane of BN) while for the structure with higher conductivity (in-plane of BN) better results gave algorithm proposed by authors.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125527509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529906
S. Watzke, P. Altieri-Weimar
In this study the influence of assembly process steps on reliability behavior of Light Emitting Diodes (LED) products is investigated. A virtual assembly process is developed in Finite Element (FE) model and is validated using experimental results deriving from material characterization as well as robustness results of the LED products. Focus is set on delamination failures and the correlation between failure risk and variations of the assembly process. Additional environmental conditions such as temperature and moisture concentration are taken into account during the assembly process. The FE model gives insights into the relationship between the reliability of the virtual assembled product and the environmental conditions and offers the capability of LED design optimization to ensure the robustness of the products.
{"title":"LED design optimization by means of virtual assembly process based on FEM simulation","authors":"S. Watzke, P. Altieri-Weimar","doi":"10.1109/EUROSIME.2013.6529906","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529906","url":null,"abstract":"In this study the influence of assembly process steps on reliability behavior of Light Emitting Diodes (LED) products is investigated. A virtual assembly process is developed in Finite Element (FE) model and is validated using experimental results deriving from material characterization as well as robustness results of the LED products. Focus is set on delamination failures and the correlation between failure risk and variations of the assembly process. Additional environmental conditions such as temperature and moisture concentration are taken into account during the assembly process. The FE model gives insights into the relationship between the reliability of the virtual assembled product and the environmental conditions and offers the capability of LED design optimization to ensure the robustness of the products.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120968450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529971
V. Rochus, M. Ramezani, S. Cosemans, S. Severi, A. Witvrouw, K. De Meyer, H. Tilmans, X. Rottenberg
This paper presents a design approach for Nano-ElectroMechanical Structures (NEMS) relays taking Casimir or van der Waals forces into account for the static and dynamic modeling of the devices. The goal is to design these structures using the Poly Silicon Germanium process, with several fabrication constraints on the gap, the structure thickness and the critical dimensions. The design approach starts with an analytical study taking the general expression for adhesion forces into account. Considering the van der Waals forces, finite element simulations performed on a simple cantilever confirm these analytical results. More complex structures are then designed, such as cantilevers with larger plates and torsion actuators, in order to increase the performance of the devices and to avoid permanent stiction. Inverters as well as NAND gates are designed and optimized to reach CMOS-equivalent specifications and finally a ring oscillator based on the new inverter and NAND gate is proposed.
{"title":"Design of SiGe Nano-Electromechanical relays for logic applications","authors":"V. Rochus, M. Ramezani, S. Cosemans, S. Severi, A. Witvrouw, K. De Meyer, H. Tilmans, X. Rottenberg","doi":"10.1109/EUROSIME.2013.6529971","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529971","url":null,"abstract":"This paper presents a design approach for Nano-ElectroMechanical Structures (NEMS) relays taking Casimir or van der Waals forces into account for the static and dynamic modeling of the devices. The goal is to design these structures using the Poly Silicon Germanium process, with several fabrication constraints on the gap, the structure thickness and the critical dimensions. The design approach starts with an analytical study taking the general expression for adhesion forces into account. Considering the van der Waals forces, finite element simulations performed on a simple cantilever confirm these analytical results. More complex structures are then designed, such as cantilevers with larger plates and torsion actuators, in order to increase the performance of the devices and to avoid permanent stiction. Inverters as well as NAND gates are designed and optimized to reach CMOS-equivalent specifications and finally a ring oscillator based on the new inverter and NAND gate is proposed.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122431307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529960
H. Hui, M. Lenczner, S. Cogan, A. Meister, M. Favre, T. Overstolz, R. Couturier, S. Domas
In this paper, our attention is focused on a two-scale model based algorithm for deflection estimation of array of Atomic force microscopes (AFM) in quasi-static regime by interferometry. In a previous work, an algorithm based on three measurements by cantilever was introduced to compute their displacements in quasi-static regime. Here, we propose an improvement so that two measurements only are required. This is based on a published two-scale model of such array. Numerical simulation results of topographic scan by an array of AFMs on a sample surface are reported. The simulations are carried out with a model calibrated from a device which design optimization is also discussed here.
{"title":"Estimation of deflections by interferometry in a cantilever array and its optimization based on a two-scale model","authors":"H. Hui, M. Lenczner, S. Cogan, A. Meister, M. Favre, T. Overstolz, R. Couturier, S. Domas","doi":"10.1109/EUROSIME.2013.6529960","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529960","url":null,"abstract":"In this paper, our attention is focused on a two-scale model based algorithm for deflection estimation of array of Atomic force microscopes (AFM) in quasi-static regime by interferometry. In a previous work, an algorithm based on three measurements by cantilever was introduced to compute their displacements in quasi-static regime. Here, we propose an improvement so that two measurements only are required. This is based on a published two-scale model of such array. Numerical simulation results of topographic scan by an array of AFMs on a sample surface are reported. The simulations are carried out with a model calibrated from a device which design optimization is also discussed here.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124149381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529949
T. Kashko, M. Essert
Plastics are used as the material for the housing of power modules. The most obvious function of this part is the electrical insulation as well as protecting the chips from the environmental pollution (e.g. dust). The housing is also designed to carry and distribute mechanical loads, for the positioning of the pins and bus bars and for containing the silicon gel until it is hardened. The housing also provides a connection point for the circuit board. Plastics are chosen due to the fact, that their properties such as moldability, stiffness, strength, and chemical resistance can be optimized by the correct choice of the basis material, the production process and by the inclusion of additives. The material behavior of the plastics depends not only on the temperature or current load state, but also on production method, load profile, age and environmental conditions such as humidity that the plastic is subjected to. The difference in mechanical behavior of the housing frequently results in an additional stress on the metallic components of the module. Improving the design of the plastic parts can reduce this load on these other components. Simulation of the plastic housing can help to predict module behavior in the relevant tests, under application conditions, and can simplify and accelerate the module development to achieve a better mechanical behavior. In the presented paper, potential weak points of the simulation strategies for the plastic material have been addressed. No matter which material model is used for simulation of the plastic (elastic, viscoelastic or viscoplastic), it is usually described as a homogeneous and an isotropic material. The material properties of the plastics, published in different sources like scientific papers or material data sheets, have been evaluated from testing specimens. In practice the more complex forms show inhomogeneous anisotropic behavior, even with pure and unreinforced plastics. This situation is amplified by the use of the short fibre reinforced plastics. Here, the complete mechanical behavior of the housing is influenced by the fiber orientation resulting from the injection molding process as well as from the housing geometry and positions of the metallic inserts. It also depends on position of weld lines, which are considered as the weak points of any plastic component. If the anisotropy and inhomogenity of the plastic part is taken into account, a better prediction of the critical areas of the chosen part can be achieved.
{"title":"Application of simulation of plastics in the development of power modules","authors":"T. Kashko, M. Essert","doi":"10.1109/EUROSIME.2013.6529949","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529949","url":null,"abstract":"Plastics are used as the material for the housing of power modules. The most obvious function of this part is the electrical insulation as well as protecting the chips from the environmental pollution (e.g. dust). The housing is also designed to carry and distribute mechanical loads, for the positioning of the pins and bus bars and for containing the silicon gel until it is hardened. The housing also provides a connection point for the circuit board. Plastics are chosen due to the fact, that their properties such as moldability, stiffness, strength, and chemical resistance can be optimized by the correct choice of the basis material, the production process and by the inclusion of additives. The material behavior of the plastics depends not only on the temperature or current load state, but also on production method, load profile, age and environmental conditions such as humidity that the plastic is subjected to. The difference in mechanical behavior of the housing frequently results in an additional stress on the metallic components of the module. Improving the design of the plastic parts can reduce this load on these other components. Simulation of the plastic housing can help to predict module behavior in the relevant tests, under application conditions, and can simplify and accelerate the module development to achieve a better mechanical behavior. In the presented paper, potential weak points of the simulation strategies for the plastic material have been addressed. No matter which material model is used for simulation of the plastic (elastic, viscoelastic or viscoplastic), it is usually described as a homogeneous and an isotropic material. The material properties of the plastics, published in different sources like scientific papers or material data sheets, have been evaluated from testing specimens. In practice the more complex forms show inhomogeneous anisotropic behavior, even with pure and unreinforced plastics. This situation is amplified by the use of the short fibre reinforced plastics. Here, the complete mechanical behavior of the housing is influenced by the fiber orientation resulting from the injection molding process as well as from the housing geometry and positions of the metallic inserts. It also depends on position of weld lines, which are considered as the weak points of any plastic component. If the anisotropy and inhomogenity of the plastic part is taken into account, a better prediction of the critical areas of the chosen part can be achieved.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125147114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529984
M. Cai, K. Tian, W. B. Chen, H. Huang, H. Y. Tang, L. L. Liang, D. Yang, X. Fan, G. Zhang
High power light-emitting diode (LED) has gained more and more applications because LED has many advantages over traditional light sources. However, it is extremely time-consuming and complicated to evaluate the LED luminaires reliability, in particular, the luminous degradation. In this work, a novel hybrid method, which combines the thermal modeling and temperature measurement, is proposed to estimate the junction temperature of high-power LEDs at system level, and therefore predict the lifetime of LED luminaries based on the known LM-80 data. First, a reference point at a luminaire system is selected to measure the temperature in the operating mode. Secondly, thermal modeling is performed to predict the reliable relationship between the junction temperature and the temperature of reference point (measuring point). Finally, the relationship between lifetime and junction temperature provided by the known LM-80 database is applied to estimate the LED luminaire's lifetime. To validate the predicted junction temperature, the thermal measuring experiments combined with the thermal tester T3ster are also implemented in this paper. It is found that, after a luminaire operates to a steady situation, the temperature difference between the reference point and the junction point reaches a constant, which indicates the thermal resistance between them can be simplified as a stable value. Therefore, the junction temperature of a luminaire can be obtained based on the temperature measurement of a measuring point and the thermal modeling. The lifetime predicted with the proposed method meets closely the lifetime estimated by vendor. The proposed method is expected to be very useful in future LED luminaire qualification test specification, instead of running lumen maintenance test to extrapolate the lifetime.
{"title":"A novel hybrid method for reliability prediction of high-power LED luminaires","authors":"M. Cai, K. Tian, W. B. Chen, H. Huang, H. Y. Tang, L. L. Liang, D. Yang, X. Fan, G. Zhang","doi":"10.1109/EUROSIME.2013.6529984","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529984","url":null,"abstract":"High power light-emitting diode (LED) has gained more and more applications because LED has many advantages over traditional light sources. However, it is extremely time-consuming and complicated to evaluate the LED luminaires reliability, in particular, the luminous degradation. In this work, a novel hybrid method, which combines the thermal modeling and temperature measurement, is proposed to estimate the junction temperature of high-power LEDs at system level, and therefore predict the lifetime of LED luminaries based on the known LM-80 data. First, a reference point at a luminaire system is selected to measure the temperature in the operating mode. Secondly, thermal modeling is performed to predict the reliable relationship between the junction temperature and the temperature of reference point (measuring point). Finally, the relationship between lifetime and junction temperature provided by the known LM-80 database is applied to estimate the LED luminaire's lifetime. To validate the predicted junction temperature, the thermal measuring experiments combined with the thermal tester T3ster are also implemented in this paper. It is found that, after a luminaire operates to a steady situation, the temperature difference between the reference point and the junction point reaches a constant, which indicates the thermal resistance between them can be simplified as a stable value. Therefore, the junction temperature of a luminaire can be obtained based on the temperature measurement of a measuring point and the thermal modeling. The lifetime predicted with the proposed method meets closely the lifetime estimated by vendor. The proposed method is expected to be very useful in future LED luminaire qualification test specification, instead of running lumen maintenance test to extrapolate the lifetime.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122315324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529945
T. Herboth, M. Guenther, R. Zeiser, J. Wilde
The aim of this study was to analyse the stress state in silicon dies joined by Low Temperature Joining Technology (LTJT) based on measurements and simulation results. The focus was to establish a method to determine the initial stress state and stress-free temperature in a silicon die attached to a copper substrate after the joining process. An approach to analyse the evolution of the stress state after sintering and during thermal cycling was developed.
{"title":"Investigation of stress states in silicon dies induced by the Low Temperature Joining Technology","authors":"T. Herboth, M. Guenther, R. Zeiser, J. Wilde","doi":"10.1109/EUROSIME.2013.6529945","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529945","url":null,"abstract":"The aim of this study was to analyse the stress state in silicon dies joined by Low Temperature Joining Technology (LTJT) based on measurements and simulation results. The focus was to establish a method to determine the initial stress state and stress-free temperature in a silicon die attached to a copper substrate after the joining process. An approach to analyse the evolution of the stress state after sintering and during thermal cycling was developed.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116041602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529954
I. Maus, H. Pape, H. Nabi, B. Michel, B. Wunderle
Interfacial delamination IS one of the most important reliability issues in the microelectronic industry. On this account more and more focus is set on related research. The application of advanced Finite Element Analysis (FEA) provides a way to understand, predict and in conclusion to prevent reliability issues. Critical interface fracture data, which include the Critical (Strain) Energy Release Rate Gc(Ψ) as a function of temperature, humidity or aging, are crucially needed in microelectronic industry for failure modeling, lifetime prediction and design evaluation associated with reliability [1], but they are rarely given in literature. Therefore fast measurement methods are needed [2, 3, 4]. The evaluation of the critical data with respect to interfacial fracture mechanics needs not only measurements, but also simulations to be carried out in parallel. The numerical methods used in this work are the Crack Surface Displacement Extrapolation Method (CSDEM) [3, 5] and the Virtual Crack Closure Technique (VCCT) [3, 4, 6]. The interface we focus on is between Cu-Lead frame and epoxy-based glue-Die Attach. This work is focused on the measurement method of the critical fracture mechanic properties with the micro Mixed Mode Tester (μMMT) [2] on samples cut from real products and their numerical evaluation including parameter effect studies.
{"title":"Determination of interface fracture parameters: Energy Release Rate and Mode Mixity using FEA","authors":"I. Maus, H. Pape, H. Nabi, B. Michel, B. Wunderle","doi":"10.1109/EUROSIME.2013.6529954","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529954","url":null,"abstract":"Interfacial delamination IS one of the most important reliability issues in the microelectronic industry. On this account more and more focus is set on related research. The application of advanced Finite Element Analysis (FEA) provides a way to understand, predict and in conclusion to prevent reliability issues. Critical interface fracture data, which include the Critical (Strain) Energy Release Rate Gc(Ψ) as a function of temperature, humidity or aging, are crucially needed in microelectronic industry for failure modeling, lifetime prediction and design evaluation associated with reliability [1], but they are rarely given in literature. Therefore fast measurement methods are needed [2, 3, 4]. The evaluation of the critical data with respect to interfacial fracture mechanics needs not only measurements, but also simulations to be carried out in parallel. The numerical methods used in this work are the Crack Surface Displacement Extrapolation Method (CSDEM) [3, 5] and the Virtual Crack Closure Technique (VCCT) [3, 4, 6]. The interface we focus on is between Cu-Lead frame and epoxy-based glue-Die Attach. This work is focused on the measurement method of the critical fracture mechanic properties with the micro Mixed Mode Tester (μMMT) [2] on samples cut from real products and their numerical evaluation including parameter effect studies.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128510693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529958
O. Holck, J. Bauer, T. Braun, H. Walter, O. Wittler, B. Wunderle, K. Lang
We have investigated the capability to predict moisture induced swelling of an epoxy by use of molecular dynamics in combination with finite element simulations with well agreeing results. Some open questions remain regarding reproducability, structural validity of molecular models and equilibrium conditions and structural acuracy and influence on the results, which will be subject of future investigations. But promising first results could be achieved which advance the understanding of the phenomenon of moisture induced swelling. Results on an investigation of enhanced transport at the interface showed a significant impact of swelling on the stresses at the interface, but only little influence on the concentration profile in the bulk. The discussion of the reasons may spark further experimental and simulative investigations to better understand mechanisms of moisture transport and swelling.
{"title":"Moisture transport and swelling stresses at moulding-compound substrate interfaces investigated by molecular modeling and finite element simulations","authors":"O. Holck, J. Bauer, T. Braun, H. Walter, O. Wittler, B. Wunderle, K. Lang","doi":"10.1109/EUROSIME.2013.6529958","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529958","url":null,"abstract":"We have investigated the capability to predict moisture induced swelling of an epoxy by use of molecular dynamics in combination with finite element simulations with well agreeing results. Some open questions remain regarding reproducability, structural validity of molecular models and equilibrium conditions and structural acuracy and influence on the results, which will be subject of future investigations. But promising first results could be achieved which advance the understanding of the phenomenon of moisture induced swelling. Results on an investigation of enhanced transport at the interface showed a significant impact of swelling on the stresses at the interface, but only little influence on the concentration profile in the bulk. The discussion of the reasons may spark further experimental and simulative investigations to better understand mechanisms of moisture transport and swelling.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134000554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529917
T. D. Bui, F. Bremerkamp, M. Nowottnick, D. Seehase
As a theoretical prediction the simulations of protection of PCB structures in microwave process are successful. Unless the structure with all wires crosses the polarization, the antenna effect will stand over the dielectric. Conductive shields can be used locally or totally. By increasing the imaginary part of the permitivity of the coating, the dielectric heating can dominate the antenna effect.
{"title":"Protection of printed circuit board structures in microwave process","authors":"T. D. Bui, F. Bremerkamp, M. Nowottnick, D. Seehase","doi":"10.1109/EUROSIME.2013.6529917","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529917","url":null,"abstract":"As a theoretical prediction the simulations of protection of PCB structures in microwave process are successful. Unless the structure with all wires crosses the polarization, the antenna effect will stand over the dielectric. Conductive shields can be used locally or totally. By increasing the imaginary part of the permitivity of the coating, the dielectric heating can dominate the antenna effect.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134376050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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