2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529912
B. Zafer, M. H. Vishkasougheh, B. Tunaboylu
This study investigates the wafer probe temperature distribution along a probe body in order to model probe burn phenomenon by using computational mechanics techniques. The finite volume software is used to study the effects of different materials and different geometrical factors on the temperature along a special design vertical/spring and cantilever probe. The computation shows higher temperatures towards the probe tip region as a result of Joule heating. The probe burn is also observed at the tip region of spring and cantilever probes in wafer testing. This is believed to be due to very low heat dissipation rates resulting from very small sizes compared to the probe body.
{"title":"Wafer test probe burn modeling and characterization","authors":"B. Zafer, M. H. Vishkasougheh, B. Tunaboylu","doi":"10.1109/EUROSIME.2013.6529912","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529912","url":null,"abstract":"This study investigates the wafer probe temperature distribution along a probe body in order to model probe burn phenomenon by using computational mechanics techniques. The finite volume software is used to study the effects of different materials and different geometrical factors on the temperature along a special design vertical/spring and cantilever probe. The computation shows higher temperatures towards the probe tip region as a result of Joule heating. The probe burn is also observed at the tip region of spring and cantilever probes in wafer testing. This is believed to be due to very low heat dissipation rates resulting from very small sizes compared to the probe body.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121492666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529980
S. Leung, L. Zhong, Jia Wei, Zhenlei Xu, C. Yuan, G. Zhang
LED module with multiple chips on silicon substrate becomes one of the mainstream light engine designs. Compared to conventional discrete LED package, which based on single die, module design with multi LED dies is necessary to fulfill the high luminous requirement for various lighting applications. Fabrication of the silicon based substrate can take the advantages of wafer level processes, which is a cost effective solution in massively parallel high throughput manufacturing and having the flexibility of scalability. Furthermore, the advances of silicon MEMS processing technologies open up the novel 3D module design consideration. The fabrication of 3D structure on silicon wafer can be realized by anisotropic etching based crystal direction and etchant selection. 3D cavities to embrace the LED dies, such as V-groove or trapezoidal basin, can be fabricated in by proper control of mask design and etch process. The fabricated cavities can then be coated with a reflective metal layer to become light reflectors. In this study, enhanced light extraction module design based on 3D reflector cavities is design and fabricated. The new design make used of the bulk micromachining process for tuning the reflector cup structure in order to effectively guiding the light emitted from the lateral surfaces of the LED dies. The optical performance related to the reflector geometries is examined by ray trace simulation. The light extraction can be improved by tuning the reflector placement and the depth of the reflector. The LED modules were fabricated and their optical performances were measured. The measured optical performance is presented and the design consideration is discussed.
{"title":"Optical design and characterization of micro-fabricated light reflector for 3D multi-chip LED module","authors":"S. Leung, L. Zhong, Jia Wei, Zhenlei Xu, C. Yuan, G. Zhang","doi":"10.1109/EUROSIME.2013.6529980","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529980","url":null,"abstract":"LED module with multiple chips on silicon substrate becomes one of the mainstream light engine designs. Compared to conventional discrete LED package, which based on single die, module design with multi LED dies is necessary to fulfill the high luminous requirement for various lighting applications. Fabrication of the silicon based substrate can take the advantages of wafer level processes, which is a cost effective solution in massively parallel high throughput manufacturing and having the flexibility of scalability. Furthermore, the advances of silicon MEMS processing technologies open up the novel 3D module design consideration. The fabrication of 3D structure on silicon wafer can be realized by anisotropic etching based crystal direction and etchant selection. 3D cavities to embrace the LED dies, such as V-groove or trapezoidal basin, can be fabricated in by proper control of mask design and etch process. The fabricated cavities can then be coated with a reflective metal layer to become light reflectors. In this study, enhanced light extraction module design based on 3D reflector cavities is design and fabricated. The new design make used of the bulk micromachining process for tuning the reflector cup structure in order to effectively guiding the light emitted from the lateral surfaces of the LED dies. The optical performance related to the reflector geometries is examined by ray trace simulation. The light extraction can be improved by tuning the reflector placement and the depth of the reflector. The LED modules were fabricated and their optical performances were measured. The measured optical performance is presented and the design consideration is discussed.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130571951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529961
A. Grams, T. Prewitz, O. Wittler, J. Kripfgans, S. Schmitz, A. Middendorf, W. Muller, K. Lang
In this study possibilities are investigated to use the cohesive zone method for numerical calculation of fatigue crack growth through the interface area of aluminum thick wire bond joints. For that purpose a detailed three-dimensional model of a wire bond joint is built. Two approaches are investigated to describe the fatigue crack growth: explicit calculation of a large number of cycles and crack growth prediction using a crack growth law like the Paris' law. Both methods are shown to be theoretically feasible and challenges and limits of the cohesive zone method are described.
{"title":"Simulation of an aluminum thick wire bond fatigue crack by means of the cohesive zone method","authors":"A. Grams, T. Prewitz, O. Wittler, J. Kripfgans, S. Schmitz, A. Middendorf, W. Muller, K. Lang","doi":"10.1109/EUROSIME.2013.6529961","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529961","url":null,"abstract":"In this study possibilities are investigated to use the cohesive zone method for numerical calculation of fatigue crack growth through the interface area of aluminum thick wire bond joints. For that purpose a detailed three-dimensional model of a wire bond joint is built. Two approaches are investigated to describe the fatigue crack growth: explicit calculation of a large number of cycles and crack growth prediction using a crack growth law like the Paris' law. Both methods are shown to be theoretically feasible and challenges and limits of the cohesive zone method are described.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":" 15","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120829748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529947
P. Saettler, M. Boettcher, K. Wolter
In this paper the thermo-mechanical behavior of Through Silicon Vias (TSVs) is in the center of interest. Therefore a Finite Element model was developed, which calculates emerging stresses and strains in TSV periphery during annealing. For validation of the simulation results μ-Raman measurements on according test samples were carried out. Samples underwent annealing at 250 °C for 2 h. Warpage and Raman shifts were measured subsequently. Because of the complex stress distribution in TSV periphery a linear relation between stress and Raman shift cannot be presumed. For this reason an evaluation routine is introduced, that enables comparison of Raman measurements and simulation. Thereby, not only the calculation of Raman shifts out of FE data is executed. Further physical effects like penetration depth and laser spot size are taken into account. This procedure enables to move from the evaluation of single node results to a constrained section containing the laser excited region. In summary our paper succeeds in developing a new evaluation algorithm for the transformation of calculated mechanical strains in TSV periphery into Raman shifts. First comparisons of measurements and FE-results deliver much better fitting of data.
{"title":"μ-Raman spectroscopy and FE-analysis of thermo-mechanical stresses in TSV periphery","authors":"P. Saettler, M. Boettcher, K. Wolter","doi":"10.1109/EUROSIME.2013.6529947","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529947","url":null,"abstract":"In this paper the thermo-mechanical behavior of Through Silicon Vias (TSVs) is in the center of interest. Therefore a Finite Element model was developed, which calculates emerging stresses and strains in TSV periphery during annealing. For validation of the simulation results μ-Raman measurements on according test samples were carried out. Samples underwent annealing at 250 °C for 2 h. Warpage and Raman shifts were measured subsequently. Because of the complex stress distribution in TSV periphery a linear relation between stress and Raman shift cannot be presumed. For this reason an evaluation routine is introduced, that enables comparison of Raman measurements and simulation. Thereby, not only the calculation of Raman shifts out of FE data is executed. Further physical effects like penetration depth and laser spot size are taken into account. This procedure enables to move from the evaluation of single node results to a constrained section containing the laser excited region. In summary our paper succeeds in developing a new evaluation algorithm for the transformation of calculated mechanical strains in TSV periphery into Raman shifts. First comparisons of measurements and FE-results deliver much better fitting of data.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130735325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529907
J. Kludt, K. Weide-Zaage, M. Ackermann, V. Hein
Highly robust metallizations in ICs for high temperature and high current applications are needed. Special thick metal layers often known as “power metals” are added to achieve a higher current capability. But these metallizations suffer from reliability limitations as well. Therefore a new design for “power metals” was created for a 0.35μm aluminium CMOS process. The reliability of a new power metal structure is investigated in this article. A determination of the thermal-electrical and thermo-mechanical behaviour is carried out by simulations.
{"title":"Characterization of a new designed octahedron slotted metal track by simulations","authors":"J. Kludt, K. Weide-Zaage, M. Ackermann, V. Hein","doi":"10.1109/EUROSIME.2013.6529907","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529907","url":null,"abstract":"Highly robust metallizations in ICs for high temperature and high current applications are needed. Special thick metal layers often known as “power metals” are added to achieve a higher current capability. But these metallizations suffer from reliability limitations as well. Therefore a new design for “power metals” was created for a 0.35μm aluminium CMOS process. The reliability of a new power metal structure is investigated in this article. A determination of the thermal-electrical and thermo-mechanical behaviour is carried out by simulations.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"343 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132660457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529897
N. Iwamoto
Mesoscale models (parameterized from molecular models) have been previously reported [1-2] which simulate interfacial failure of both flat and rough epoxy-copper oxide interfaces, and demonstrate how coarsegrained models could be used to predict interfacial properties and mechanical failure. The work was targeted at understand molding compound failure [3-4]; however, all molding compounds are highly filled and the aspect of the filler had not yet been addressed. The current paper reports the continued efforts to explore the use of mesoscale models by adding in the effect of the filler on the mechanical response of the epoxy. This work was supported in part by the NanoInterface Consortium funded from the Seventh Framework Program for Research and Technological Development (FP7) of the European Union (NMP3-SL-20080214371).
{"title":"Molecularly derived mesoscale modeling of an epoxy/Cu interface (Part IV): The effect of Filler","authors":"N. Iwamoto","doi":"10.1109/EUROSIME.2013.6529897","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529897","url":null,"abstract":"Mesoscale models (parameterized from molecular models) have been previously reported [1-2] which simulate interfacial failure of both flat and rough epoxy-copper oxide interfaces, and demonstrate how coarsegrained models could be used to predict interfacial properties and mechanical failure. The work was targeted at understand molding compound failure [3-4]; however, all molding compounds are highly filled and the aspect of the filler had not yet been addressed. The current paper reports the continued efforts to explore the use of mesoscale models by adding in the effect of the filler on the mechanical response of the epoxy. This work was supported in part by the NanoInterface Consortium funded from the Seventh Framework Program for Research and Technological Development (FP7) of the European Union (NMP3-SL-20080214371).","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132113651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529921
K. Jankowski, R. Świerczyński, K. Urbanski, A. Wymyslowski, D. Chicot, R. Dudek
Last decades in reliability prototyping of microelectronic devices show that from a long time there is no good solution to examine it in relatively short time and small expenditure of costs. Currently all thermo-mechanical reliability processes are long-lasting and costly. With using only the most dominating failure mode and cyclic loadings tests can last for a number of months. Companies, which produce their products very fast can't allow on such inconvenience, because this would lead to bankruptcy. To solve that kind of problem in this paper will be proposed new method of reliability investigating. Most of existing methods are concerned on only one failure mode which is dominating under selected loading conditions. Moreover all failure analysis are done under the simplified conditions what means that obtained results are not properly reliable. New presented method aim at using typical failure modes creep and fatigue at the same time while testing. That solution can have an important meaning in the standard Accelerated Thermal Cyclic test, which are based partly on experiment measurements and numerical analysis. Therefore appropriate understanding and development of analytical methods and experimental tools for multifailure criteria analysis could be very helpful. This work presents a methodology based on the use of well known indentation technique and second, innovative method with using new instrument called Failure And Reliability Investigation System created to study creep and fatigue phenomenon carried out on two lead-free alloys: SAC 405(S-SnAg4Cu0.5) and SAC 307(S-SnAg3Cu0.7).
{"title":"Maintenance of solder joints on the strength of simultaneously acting creep and fatigue phenomena by using microindentation technique","authors":"K. Jankowski, R. Świerczyński, K. Urbanski, A. Wymyslowski, D. Chicot, R. Dudek","doi":"10.1109/EUROSIME.2013.6529921","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529921","url":null,"abstract":"Last decades in reliability prototyping of microelectronic devices show that from a long time there is no good solution to examine it in relatively short time and small expenditure of costs. Currently all thermo-mechanical reliability processes are long-lasting and costly. With using only the most dominating failure mode and cyclic loadings tests can last for a number of months. Companies, which produce their products very fast can't allow on such inconvenience, because this would lead to bankruptcy. To solve that kind of problem in this paper will be proposed new method of reliability investigating. Most of existing methods are concerned on only one failure mode which is dominating under selected loading conditions. Moreover all failure analysis are done under the simplified conditions what means that obtained results are not properly reliable. New presented method aim at using typical failure modes creep and fatigue at the same time while testing. That solution can have an important meaning in the standard Accelerated Thermal Cyclic test, which are based partly on experiment measurements and numerical analysis. Therefore appropriate understanding and development of analytical methods and experimental tools for multifailure criteria analysis could be very helpful. This work presents a methodology based on the use of well known indentation technique and second, innovative method with using new instrument called Failure And Reliability Investigation System created to study creep and fatigue phenomenon carried out on two lead-free alloys: SAC 405(S-SnAg4Cu0.5) and SAC 307(S-SnAg3Cu0.7).","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128665590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529996
A. Yadur, P. Gromala, S. Green, K. Mat Daud
Electronic packages in automotive industry are prone to harsh environmental attacks such as extreme temperatures, high temperature variations, shocks, vibrations, humidity and hazarding liquids. Plastic encapsulation is introduced to protect the electronic part by molding a compound material around it. This has been proven as a powerful solution to these challenges. Interfacial delamination is one of the major concerns in reliability issues of electronic packages with molding. To fulfill the reliability challenges, these packages require accurate reliability models and tools for lifetime estimation during the product design and development stage. Hence it is aspired to address the study of adhesion between molding compound and leadframe interface as one aspect in reliability studies.
{"title":"Investigation of interface delamination of EMC-copper interfaces in molded electronic packages","authors":"A. Yadur, P. Gromala, S. Green, K. Mat Daud","doi":"10.1109/EUROSIME.2013.6529996","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529996","url":null,"abstract":"Electronic packages in automotive industry are prone to harsh environmental attacks such as extreme temperatures, high temperature variations, shocks, vibrations, humidity and hazarding liquids. Plastic encapsulation is introduced to protect the electronic part by molding a compound material around it. This has been proven as a powerful solution to these challenges. Interfacial delamination is one of the major concerns in reliability issues of electronic packages with molding. To fulfill the reliability challenges, these packages require accurate reliability models and tools for lifetime estimation during the product design and development stage. Hence it is aspired to address the study of adhesion between molding compound and leadframe interface as one aspect in reliability studies.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133607216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529909
B. Czerny, I. Paul, G. Khatibi, M. Thoben
The subject of this study was to investigate the effect of different geometrical loop shapes on the reliability of 400 μm thick Al bond wires in IGBT modules by means of experimental and analytical methods. The experimental fatigue tests have been realized by linear cyclic displacements of 5-45 μm of the contact plates at 200 Hz and 20 kHz. Life time curves were obtained for bond wire connections with different loop heights, distances and angles with the main failure mechanism being wire bond heel cracking. Furthermore an analytical model was developed to calculate the effect of variation of geometrical shape parameters on the stress at different locations of the bond wire. This model can be used to make a preliminary geometry selection of the bond wire and to predict the force or stress at critical sites of the wire bond during stress tests. This model was validated with finite element analysis.
{"title":"Influence of wirebond shape on its lifetime with application to frame connections","authors":"B. Czerny, I. Paul, G. Khatibi, M. Thoben","doi":"10.1109/EUROSIME.2013.6529909","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529909","url":null,"abstract":"The subject of this study was to investigate the effect of different geometrical loop shapes on the reliability of 400 μm thick Al bond wires in IGBT modules by means of experimental and analytical methods. The experimental fatigue tests have been realized by linear cyclic displacements of 5-45 μm of the contact plates at 200 Hz and 20 kHz. Life time curves were obtained for bond wire connections with different loop heights, distances and angles with the main failure mechanism being wire bond heel cracking. Furthermore an analytical model was developed to calculate the effect of variation of geometrical shape parameters on the stress at different locations of the bond wire. This model can be used to make a preliminary geometry selection of the bond wire and to predict the force or stress at critical sites of the wire bond during stress tests. This model was validated with finite element analysis.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122205742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529894
P. Gromala, S. Fischer, T. Zoller, A. Andreescu, J. Duerr, M. Rapp, J. Wilde
In this paper internal stress state measurements in a large molded electronic control unit are discussed. Measurements were done during transfer molding process in a high volume production environment. In addition, the effect of the post mold cure (PMC) was investigated. Tests were done utilizing piezoresistive stress sensors and thin film strain gages. For some parts post mold cure was done in parallel to warpage measurements using TDM Insidix apparatus. In this case the stress and deformation measurements were conducted at the same time. It was observed that the initial warpage of the module before the PMC at room temperature was reduced by 40%. It is shown that the reduction of the deformation is caused by shifting of the glass transition temperature (Tg) to 180°C, which was for not fully cured sample at 125°C. As a result of increase of the Tg, the internal stresses at room temperature after the PMC were changed as well. Driven by the fact that the out-of-plane component of stress is affecting the measurement of the in-plane components of stress, numerical simulations were used in an iterative way to correlate the results of experiment. Presented algorithm improved results of the measurements.
{"title":"Internal stress state measurements of the large molded electronic control units","authors":"P. Gromala, S. Fischer, T. Zoller, A. Andreescu, J. Duerr, M. Rapp, J. Wilde","doi":"10.1109/EUROSIME.2013.6529894","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529894","url":null,"abstract":"In this paper internal stress state measurements in a large molded electronic control unit are discussed. Measurements were done during transfer molding process in a high volume production environment. In addition, the effect of the post mold cure (PMC) was investigated. Tests were done utilizing piezoresistive stress sensors and thin film strain gages. For some parts post mold cure was done in parallel to warpage measurements using TDM Insidix apparatus. In this case the stress and deformation measurements were conducted at the same time. It was observed that the initial warpage of the module before the PMC at room temperature was reduced by 40%. It is shown that the reduction of the deformation is caused by shifting of the glass transition temperature (Tg) to 180°C, which was for not fully cured sample at 125°C. As a result of increase of the Tg, the internal stresses at room temperature after the PMC were changed as well. Driven by the fact that the out-of-plane component of stress is affecting the measurement of the in-plane components of stress, numerical simulations were used in an iterative way to correlate the results of experiment. Presented algorithm improved results of the measurements.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126132245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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