2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529928
M. Lofrano, N. Pham, M. Rosmeulen, P. Soussan
In this paper we used Finite Element Modeling (FEM) to investigate the wafer bow induced during the substrate transfer process for GaN LED on 200mm silicon wafer. The substrate transfer process is to transfer the thin GaN LED device layer to a carrier wafer using a permanent bonding layer. In this work two different bonding materials were benchmarked, a metallic CuSn alloy and a Benzocyclobutene (BCB) polymer. It is important to control the wafer bow during the process because the high wafer bow value may cause problem for further process steps, besides it affects process quality such as in lithography and can be a threat to the device reliability. It was found that the wafer bow changes during substrate transfer process. Metallic bond material introduces high bow values at the end of the substrate transfer process. Different compositions of metallic bond material inlfuence the final wafer bow.
{"title":"Stress and wafer warpage analysis of GaN thin film induced by transfer bonding process on 200mm Si substrate","authors":"M. Lofrano, N. Pham, M. Rosmeulen, P. Soussan","doi":"10.1109/EUROSIME.2013.6529928","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529928","url":null,"abstract":"In this paper we used Finite Element Modeling (FEM) to investigate the wafer bow induced during the substrate transfer process for GaN LED on 200mm silicon wafer. The substrate transfer process is to transfer the thin GaN LED device layer to a carrier wafer using a permanent bonding layer. In this work two different bonding materials were benchmarked, a metallic CuSn alloy and a Benzocyclobutene (BCB) polymer. It is important to control the wafer bow during the process because the high wafer bow value may cause problem for further process steps, besides it affects process quality such as in lithography and can be a threat to the device reliability. It was found that the wafer bow changes during substrate transfer process. Metallic bond material introduces high bow values at the end of the substrate transfer process. Different compositions of metallic bond material inlfuence the final wafer bow.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133291235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529916
T. Azoui, E. Marcault, P. Tounsi, J. Massol, J. Dorkel, P. Dupuy
This paper presents the use of 3D transient electrothermal modeling methodology to investigate the effects of delamination on power MOSFET with SnPb soldering when a charge short-circuit occurs. The results given by electro-thermal simulations allow the study of phenomena difficult to capture experimentally, like focalization of the temperature and current densities due to the structure topology and resistivity variation. The use of sintered silver instead of SnPb could reduce the delamination extension, but it gives also improvements in terms of thermal and electrical resistivities. These latest improvements are quantified in this paper.
{"title":"Electro-thermal modeling to quantify the electrothermal impact of the solder joint delamination on power device assemblies","authors":"T. Azoui, E. Marcault, P. Tounsi, J. Massol, J. Dorkel, P. Dupuy","doi":"10.1109/EUROSIME.2013.6529916","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529916","url":null,"abstract":"This paper presents the use of 3D transient electrothermal modeling methodology to investigate the effects of delamination on power MOSFET with SnPb soldering when a charge short-circuit occurs. The results given by electro-thermal simulations allow the study of phenomena difficult to capture experimentally, like focalization of the temperature and current densities due to the structure topology and resistivity variation. The use of sintered silver instead of SnPb could reduce the delamination extension, but it gives also improvements in terms of thermal and electrical resistivities. These latest improvements are quantified in this paper.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121204029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529908
R. Dudek, P. Sommer, A. Fix, S. Rzepka, B. Michel
New high temperature interconnection technologies emerge because of the need for electronics use at temperatures beyond 150°C. Transient liquid phase (TLP) soldering is one option with the advantage of processing conditions being close to those for conventional soldering. In the Cu-Sn system addressed in the paper, a high post-processed melting point of the solder interconnects is achieved due to the formation of Cu6Sn5 and Cu3Sn intermetallic compounds (IMC). A specific low melting solder paste under development can be used if applications for both power and logic electronics are addressed. To accelerate the development of IMCs in thicker solder layers, metallic particles are embedded in the solder paste. New challenges concerning the thermo-mechanical reliability of these devices arise as the material properties of the IMC interconnect differ substantially from those known for soft solders. Based on material characterization of pure IMC effective material characteristics of the TLP joint, consisting of a mixture of different constituents, have been derived based on a micromechanical model. Due to the change in material stiffness and strongly decreasing ductility of the joining material, the potential failure modes of an assembly made by TLP soldering change. The new thermo- mechanical failure risks are evaluated for a power module, an IGBT on DCB substrate, by both conventional FEA and cohesive zone modelling.
{"title":"Reliability issues for high temperature interconnections based on transient liquid phase soldering","authors":"R. Dudek, P. Sommer, A. Fix, S. Rzepka, B. Michel","doi":"10.1109/EUROSIME.2013.6529908","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529908","url":null,"abstract":"New high temperature interconnection technologies emerge because of the need for electronics use at temperatures beyond 150°C. Transient liquid phase (TLP) soldering is one option with the advantage of processing conditions being close to those for conventional soldering. In the Cu-Sn system addressed in the paper, a high post-processed melting point of the solder interconnects is achieved due to the formation of Cu6Sn5 and Cu3Sn intermetallic compounds (IMC). A specific low melting solder paste under development can be used if applications for both power and logic electronics are addressed. To accelerate the development of IMCs in thicker solder layers, metallic particles are embedded in the solder paste. New challenges concerning the thermo-mechanical reliability of these devices arise as the material properties of the IMC interconnect differ substantially from those known for soft solders. Based on material characterization of pure IMC effective material characteristics of the TLP joint, consisting of a mixture of different constituents, have been derived based on a micromechanical model. Due to the change in material stiffness and strongly decreasing ductility of the joining material, the potential failure modes of an assembly made by TLP soldering change. The new thermo- mechanical failure risks are evaluated for a power module, an IGBT on DCB substrate, by both conventional FEA and cohesive zone modelling.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"333 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125791136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529919
Ronald Schongrundneri, M. Cordill, J. Berger, Hans-Peter KrUckli, Klaus Fellner, T. Krivec, Markus Kurz, P. Fuchs, Giinther A. Maierl
During manufacturing and use printed circuit boards (PCB) are subjected to different mechanical and thermal loads. These loads can cause the PCBs to develop a delamination between the insulating layers of pre-preg and conducting copper which can lead to failure of the entire electronic device. Therefore, it is critical to understand the delamination process and to know the adhesion strengths of the interfaces in a PCB to improve the device reliability. To evaluate the copper/pre-preg interface properties in PCBs a combination of experiments and modeling is used. The experimental characterization of interfacial adhesion strength was measured with a 4 point bending (4PB) technique. To find a context with application, the adhesion strength was determined as a function of reflow cycles. Finite element (FE) modeling was utilized to determine the optimum layer structure and the stiffness for the test specimens. In a second step, the FE model was used to study the influence of plastic deformation of the copper foils and the residual stresses developing during the reflow process on the adhesion strength. It could be shown that the calculated adhesion strength changed with the number of reflow cycles. The measured adhesion strengths were influenced by plastic deformation of the specimen and by residual stresses within the specimen.
{"title":"Adhesion of printed circuit boards with bending and the effect of reflow cycles","authors":"Ronald Schongrundneri, M. Cordill, J. Berger, Hans-Peter KrUckli, Klaus Fellner, T. Krivec, Markus Kurz, P. Fuchs, Giinther A. Maierl","doi":"10.1109/EUROSIME.2013.6529919","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529919","url":null,"abstract":"During manufacturing and use printed circuit boards (PCB) are subjected to different mechanical and thermal loads. These loads can cause the PCBs to develop a delamination between the insulating layers of pre-preg and conducting copper which can lead to failure of the entire electronic device. Therefore, it is critical to understand the delamination process and to know the adhesion strengths of the interfaces in a PCB to improve the device reliability. To evaluate the copper/pre-preg interface properties in PCBs a combination of experiments and modeling is used. The experimental characterization of interfacial adhesion strength was measured with a 4 point bending (4PB) technique. To find a context with application, the adhesion strength was determined as a function of reflow cycles. Finite element (FE) modeling was utilized to determine the optimum layer structure and the stiffness for the test specimens. In a second step, the FE model was used to study the influence of plastic deformation of the copper foils and the residual stresses developing during the reflow process on the adhesion strength. It could be shown that the calculated adhesion strength changed with the number of reflow cycles. The measured adhesion strengths were influenced by plastic deformation of the specimen and by residual stresses within the specimen.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114598003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529979
J. Schlobohm, K. Weide-Zaage, R. Rongen, F. Voogt, R. Roucou
With the aim to miniaturize and to reduce the cost, the increasing demand, regarding to advanced 3D-packages as well as high performance applications, accelerates the development of 3D-silicon integrated circuits. The trend to smaller and lighter electronics has highlighted many efforts towards size reduction and increased performance in electronic products. RF performances are limited by parasitic effects due to the RLC network between the wirebond from the dies to the leadframe. The use of flip-chip bonding technology for very fine pitch packaging allows high integration and limits parasitic inductances. Electromigration (EM) and thermomigration (TM) may have serious reliability issues for fine-pitch Pb-free solder bumps in the flip-chip technology used in consumer electronic products. A possibility to extend the reliability is the use of plastic ball in the solder bumps. Bumps containing a plastic solder balls have an excellent reliability. Using a plastic ball with a low Young modulus, the solder hardness is moderated and the stress on a ball is relaxed. Due to this the stress doesn't concentrate on the solder joint which prolongs the lifetime. In this investigation the thermal-electrical-mechanical influence of electromigration on bumps containing a plastic solder is investigated.
{"title":"Simulation and measurement of the solder bumps with a plastic core","authors":"J. Schlobohm, K. Weide-Zaage, R. Rongen, F. Voogt, R. Roucou","doi":"10.1109/EUROSIME.2013.6529979","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529979","url":null,"abstract":"With the aim to miniaturize and to reduce the cost, the increasing demand, regarding to advanced 3D-packages as well as high performance applications, accelerates the development of 3D-silicon integrated circuits. The trend to smaller and lighter electronics has highlighted many efforts towards size reduction and increased performance in electronic products. RF performances are limited by parasitic effects due to the RLC network between the wirebond from the dies to the leadframe. The use of flip-chip bonding technology for very fine pitch packaging allows high integration and limits parasitic inductances. Electromigration (EM) and thermomigration (TM) may have serious reliability issues for fine-pitch Pb-free solder bumps in the flip-chip technology used in consumer electronic products. A possibility to extend the reliability is the use of plastic ball in the solder bumps. Bumps containing a plastic solder balls have an excellent reliability. Using a plastic ball with a low Young modulus, the solder hardness is moderated and the stress on a ball is relaxed. Due to this the stress doesn't concentrate on the solder joint which prolongs the lifetime. In this investigation the thermal-electrical-mechanical influence of electromigration on bumps containing a plastic solder is investigated.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128526762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529933
A. Wright, S. Koffel, P. Pichler, H. Enichlmair, R. Minixhofer, E. Wachmann
For an assessment of the stresses occurring during ball bonding of high-voltage CMOS chips in a structure comprising a thin and a thick silicon dioxide layer below the bonding pad, a dynamic model of the process was set up and the materials parameters were calibrated. For a realistic result of the deformation of the bonding ball during the ultrasonic stage, up to 60 ultrasonic cycles were simulated. To reproduce the final height of the bonding ball, dynamically increased friction between the ball and the bonding pad as well as ultrasonic softening of the metals within the model had to be taken into account. For a more sensitive prediction of failure, the conventional failure criterion based on the ultimate tensile strength of brittle materials was complemented by an additional criterion suggested by Christensen which takes the combined effects of perpendicular tensile and compressive principle stresses into account. This yielded a prediction of earlier failure for the thinner oxide layer while no failure was predicted for the thick isolation oxide layer.
{"title":"On the thermo-mechanical modelling of a ball bonding process with ultrasonic softening","authors":"A. Wright, S. Koffel, P. Pichler, H. Enichlmair, R. Minixhofer, E. Wachmann","doi":"10.1109/EUROSIME.2013.6529933","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529933","url":null,"abstract":"For an assessment of the stresses occurring during ball bonding of high-voltage CMOS chips in a structure comprising a thin and a thick silicon dioxide layer below the bonding pad, a dynamic model of the process was set up and the materials parameters were calibrated. For a realistic result of the deformation of the bonding ball during the ultrasonic stage, up to 60 ultrasonic cycles were simulated. To reproduce the final height of the bonding ball, dynamically increased friction between the ball and the bonding pad as well as ultrasonic softening of the metals within the model had to be taken into account. For a more sensitive prediction of failure, the conventional failure criterion based on the ultimate tensile strength of brittle materials was complemented by an additional criterion suggested by Christensen which takes the combined effects of perpendicular tensile and compressive principle stresses into account. This yielded a prediction of earlier failure for the thinner oxide layer while no failure was predicted for the thick isolation oxide layer.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130871627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1016/j.microrel.2014.02.022
F. Schindler-Saefkow, F. Rost, A. Otto, R. Pantou, R. Mrossko, B. Wunderle, B. Michel, S. Rzepka, J. Keller
{"title":"Stress impact of moisture diffusion measured with the stress chip","authors":"F. Schindler-Saefkow, F. Rost, A. Otto, R. Pantou, R. Mrossko, B. Wunderle, B. Michel, S. Rzepka, J. Keller","doi":"10.1016/j.microrel.2014.02.022","DOIUrl":"https://doi.org/10.1016/j.microrel.2014.02.022","url":null,"abstract":"","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125869658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529915
T. Hung, Chin-Chun Wang, K. Chiang
Power modules have been applied in various electrical products, such as power supplies, AC/DC converters, and hybrid vehicles. During power cycling tests, the coefficient of thermal expansion mismatch (CTE) between the wire and chip may cause wire liftoff. This research aims to develop an approach for wire reliability assessment. A 3-D finite element (FE) model was established based on real test samples. Coupled electro-thermal and thermal-mechanical FE analyses were conducted to analyze the mechanical behavior of bonding wire under cyclic power loading. The temperature predicted by the FE analyses was consistent with the experimental data. Incremental plastic strain was not observed when the current loading was low. The concept of high cycle fatigue should be incorporated into the life prediction model for modules subjected to low current loadings. After the simulation results were validated with the experimental data, a model for the design of power modules was proposed.
{"title":"Bonding wire life prediction model of the power module under power cycling test","authors":"T. Hung, Chin-Chun Wang, K. Chiang","doi":"10.1109/EUROSIME.2013.6529915","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529915","url":null,"abstract":"Power modules have been applied in various electrical products, such as power supplies, AC/DC converters, and hybrid vehicles. During power cycling tests, the coefficient of thermal expansion mismatch (CTE) between the wire and chip may cause wire liftoff. This research aims to develop an approach for wire reliability assessment. A 3-D finite element (FE) model was established based on real test samples. Coupled electro-thermal and thermal-mechanical FE analyses were conducted to analyze the mechanical behavior of bonding wire under cyclic power loading. The temperature predicted by the FE analyses was consistent with the experimental data. Incremental plastic strain was not observed when the current loading was low. The concept of high cycle fatigue should be incorporated into the life prediction model for modules subjected to low current loadings. After the simulation results were validated with the experimental data, a model for the design of power modules was proposed.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115153074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529931
A. Corigliano, M. Bagherinia, M. Bruggi, S. Mariani, E. Lasalandra
A multi-physics model for a beam subject to current flow in a magnetic field is proposed which takes into account thermal and non-linear geometrical effects. The model is applied to the study of a Lorentz-force MEMS magnetometer. A topology optimization algorithm in which geometrical parameters of the beam subject to Lorentz force are considered optimization variables is proposed and discussed.
{"title":"Optimal design of a resonating MEMS magnetometer: A multi-physics approach","authors":"A. Corigliano, M. Bagherinia, M. Bruggi, S. Mariani, E. Lasalandra","doi":"10.1109/EUROSIME.2013.6529931","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529931","url":null,"abstract":"A multi-physics model for a beam subject to current flow in a magnetic field is proposed which takes into account thermal and non-linear geometrical effects. The model is applied to the study of a Lorentz-force MEMS magnetometer. A topology optimization algorithm in which geometrical parameters of the beam subject to Lorentz force are considered optimization variables is proposed and discussed.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122497674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529959
D. May, B. Wunderle, R. Schacht, B. Michel
New packaging technologies are necessary to meet the demand for smaller and more reliable electronic devices. The so-called system-in-package (SiP) concept brings different technologies, material combinations and processes together in one package. To ensure the reliability of such a package reliable, fast and non-destructive failure analysis are needed.
{"title":"Transient thermal response as failure analytical tool - A comparison of different techniques","authors":"D. May, B. Wunderle, R. Schacht, B. Michel","doi":"10.1109/EUROSIME.2013.6529959","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529959","url":null,"abstract":"New packaging technologies are necessary to meet the demand for smaller and more reliable electronic devices. The so-called system-in-package (SiP) concept brings different technologies, material combinations and processes together in one package. To ensure the reliability of such a package reliable, fast and non-destructive failure analysis are needed.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125400469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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