2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529995
S. Koh, C. Yuan, Bo Sun, Bo Li, Xuejun Fan, G. Zhang
A 2-stage acceleration theory for luminous flux depreciation testing at LED lamp/luminaire level is developed to reduce the test time from 6,000 hours to less than 2,000 hours. Such an acceleration theory is based on the exponential decay model and Arrhenius acceleration equation. Three key parameters, namely, activation energy, operating junction temperature, and accelerated testing junction temperature are obtained from massive proven LM80 data sets, nominal junction design temperature, and maximum allowed ambient temperature in operating conditions. A “master curve” that describes the minimum requirement of the luminous decay is defined, and the curve is associated with a certain design junction temperature. Such a design junction temperature matches the maximum junction temperature where LM80 data are enveloped in the master curve. The corresponding acceleration test procedures have been established by considering the currently available measurement capabilities. Considerable amount of representative lamp/luminaire samples, which directly came from market, have been tested to validate the theory. The results show that the proposed accelerated lifetime test is equivalent to the current 6000h test. In addition, the newly developed accelerated test can eliminate those products with either poor LED sources, or poor system thermal design, or poor electronics system (including driver system) that cannot sustain sufficient temperature storage period.
{"title":"Product level accelerated lifetime test for indoor LED luminaires","authors":"S. Koh, C. Yuan, Bo Sun, Bo Li, Xuejun Fan, G. Zhang","doi":"10.1109/EUROSIME.2013.6529995","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529995","url":null,"abstract":"A 2-stage acceleration theory for luminous flux depreciation testing at LED lamp/luminaire level is developed to reduce the test time from 6,000 hours to less than 2,000 hours. Such an acceleration theory is based on the exponential decay model and Arrhenius acceleration equation. Three key parameters, namely, activation energy, operating junction temperature, and accelerated testing junction temperature are obtained from massive proven LM80 data sets, nominal junction design temperature, and maximum allowed ambient temperature in operating conditions. A “master curve” that describes the minimum requirement of the luminous decay is defined, and the curve is associated with a certain design junction temperature. Such a design junction temperature matches the maximum junction temperature where LM80 data are enveloped in the master curve. The corresponding acceleration test procedures have been established by considering the currently available measurement capabilities. Considerable amount of representative lamp/luminaire samples, which directly came from market, have been tested to validate the theory. The results show that the proposed accelerated lifetime test is equivalent to the current 6000h test. In addition, the newly developed accelerated test can eliminate those products with either poor LED sources, or poor system thermal design, or poor electronics system (including driver system) that cannot sustain sufficient temperature storage period.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132397408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529898
S. Mulay, G. Becker, R. Vayrette, J. Raskin, T. Pardoen, M. Galcerán, S. Godet, L. Noels
The advantages of micro-electro-mechanical systems (MEMS), such as low power requirement, miniaturized sizes and costs reduction, have already made significant impact in many technological fields. MEMS are now widely used as accelerometers, pressure sensors, and resonators etc. However, the determination of the mechanical properties of MEMS devices with high accuracy is still a challenging task due to their small dimensions and often anisotropic behaviour. This paper focuses on the modelling and simulation of the fracture of a key MEMS component, which is a polycrystalline silicon beam, by discontinuous Galerkin (DG) formulation combined with an extrinsic cohesive law (ECL) to describe the fracture process. As the beam is modelled by plane-stress 2D elements, an analytical equation to compute the effective fracture strength and the effective critical strain energy release rate in terms of the through-the-thickness fracture mode and of the orientation of the facet with respect to the crystal is also developed. At the end, a model is simulated, and the results are verified as per the physics of the problem and experiments.
{"title":"The fracture studies of polycrystalline silicon based MEMS","authors":"S. Mulay, G. Becker, R. Vayrette, J. Raskin, T. Pardoen, M. Galcerán, S. Godet, L. Noels","doi":"10.1109/EUROSIME.2013.6529898","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529898","url":null,"abstract":"The advantages of micro-electro-mechanical systems (MEMS), such as low power requirement, miniaturized sizes and costs reduction, have already made significant impact in many technological fields. MEMS are now widely used as accelerometers, pressure sensors, and resonators etc. However, the determination of the mechanical properties of MEMS devices with high accuracy is still a challenging task due to their small dimensions and often anisotropic behaviour. This paper focuses on the modelling and simulation of the fracture of a key MEMS component, which is a polycrystalline silicon beam, by discontinuous Galerkin (DG) formulation combined with an extrinsic cohesive law (ECL) to describe the fracture process. As the beam is modelled by plane-stress 2D elements, an analytical equation to compute the effective fracture strength and the effective critical strain energy release rate in terms of the through-the-thickness fracture mode and of the orientation of the facet with respect to the crystal is also developed. At the end, a model is simulated, and the results are verified as per the physics of the problem and experiments.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"384 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123262399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529956
A. Todri-Sanial, A. Bosio, L. Dilillo, P. Girard, A. Virazel
Power delivery networks (PDNs) are essential to the optimal performance of the circuits. Reliable design of three-dimensional (3D) PDNs faces several challenges due to parasitics of each tier PDN and Through-Silicon-Vias (TSVs). Furthermore, as 3D integration enables high circuit densities, it induces large current demand from the PDN. Because of these attributes, 3D PDNs can suffer from excessive non-uniform voltage drop and temperatures. These are further exacerbated from electro-thermal coupling, as parasitics are temperature dependent. Already 2D PDNs are challenging to analyze due to their large granularity. 3D PDNs pose additional challenge due to multi tier PDNs connected together with TSVs resulting in even larger granularities. Thus, the objective of this work is to develop fast and accurate electro-thermal models and analysis for 3D PDNs. Electro-thermal duality is exploited to develop compact electrical and thermal analytical models for 3D PDNs and TSVs. Simulation results demonstrate the accuracy of the proposed analysis method.
{"title":"Fast and accurate electro-thermal analysis of three-dimensional power delivery networks","authors":"A. Todri-Sanial, A. Bosio, L. Dilillo, P. Girard, A. Virazel","doi":"10.1109/EUROSIME.2013.6529956","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529956","url":null,"abstract":"Power delivery networks (PDNs) are essential to the optimal performance of the circuits. Reliable design of three-dimensional (3D) PDNs faces several challenges due to parasitics of each tier PDN and Through-Silicon-Vias (TSVs). Furthermore, as 3D integration enables high circuit densities, it induces large current demand from the PDN. Because of these attributes, 3D PDNs can suffer from excessive non-uniform voltage drop and temperatures. These are further exacerbated from electro-thermal coupling, as parasitics are temperature dependent. Already 2D PDNs are challenging to analyze due to their large granularity. 3D PDNs pose additional challenge due to multi tier PDNs connected together with TSVs resulting in even larger granularities. Thus, the objective of this work is to develop fast and accurate electro-thermal models and analysis for 3D PDNs. Electro-thermal duality is exploited to develop compact electrical and thermal analytical models for 3D PDNs and TSVs. Simulation results demonstrate the accuracy of the proposed analysis method.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125832147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529936
W. Kpobie, N. Bonfoh, C. Dreistadt, M. Fendler, P. Lipinski
A constitutive model based on the micromechanical characterization of the effective thermo-elastic properties of the interconnection layer of a flip chip assembly and its implementation in a finite element code is analyzed. Given the impossibility of modeling large-size assemblies containing more than one million solder bumps (more than 20 billion of elements will be needed), the suggested approach seems to be an adequate solution. The interconnection layer consisting of solder bumps surrounded by underfill (epoxy) was replaced by a homogeneous equivalent material (HEM) and the process of manufacturing (thermal loading) of the assembly has been simulated. The equivalent model allows estimation of the mean stress and strain fields in each phase of the interconnection layer. The reliability of these types of microelectronic assembly is potentially related to that of the interconnection layer. Thus, to approximate more precisely the real stress and strain fields in these phases, two structural zooming models were developed namely by coupling and sub-modeling. After comparisons, submodeling seemed to be the more precise and can be used, together with the equivalent model, for a megapixel flip chip assembly calculations.
{"title":"3D modeling of flip chip assemblies with large array and small pitch: validation of the proposed model","authors":"W. Kpobie, N. Bonfoh, C. Dreistadt, M. Fendler, P. Lipinski","doi":"10.1109/EUROSIME.2013.6529936","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529936","url":null,"abstract":"A constitutive model based on the micromechanical characterization of the effective thermo-elastic properties of the interconnection layer of a flip chip assembly and its implementation in a finite element code is analyzed. Given the impossibility of modeling large-size assemblies containing more than one million solder bumps (more than 20 billion of elements will be needed), the suggested approach seems to be an adequate solution. The interconnection layer consisting of solder bumps surrounded by underfill (epoxy) was replaced by a homogeneous equivalent material (HEM) and the process of manufacturing (thermal loading) of the assembly has been simulated. The equivalent model allows estimation of the mean stress and strain fields in each phase of the interconnection layer. The reliability of these types of microelectronic assembly is potentially related to that of the interconnection layer. Thus, to approximate more precisely the real stress and strain fields in these phases, two structural zooming models were developed namely by coupling and sub-modeling. After comparisons, submodeling seemed to be the more precise and can be used, together with the equivalent model, for a megapixel flip chip assembly calculations.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127127972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529977
Bin Yang, W. Belkhir, M. Lenczner, N. Ratier
We introduce a framework for computer-aided derivation of multi-scale models dedicated to arrays of microsystems. It relies on a combination of a asymptotic methods used in the field of partial differential equations with term rewriting techniques coming from computer science. In our approach, a multi-scale model derivation is characterized by the features taken into account in the asymptotic analyses. Its formulation consists in a derivation of a reference model associated to an elementary nominal model, and in a set of transformations to apply to this proof until it takes into account the wanted features. In addition to the reference model proof, the framework includes first order rewriting principles designed for asymptotic model derivations, and second order rewriting principles dedicated to transformations of model derivations. We apply the method to generate a family of homogenized models for second order elliptic equations with periodic coefficients that could be posed in multi-dimensional domains, with possibly multi-domains and/or thin domains. The transfer of asymptotic models into a finite element software package is illustrated through an example of a model of periodic cantilever arrays.
{"title":"A multiscale model derivation and simulation tool for MEMS arrays","authors":"Bin Yang, W. Belkhir, M. Lenczner, N. Ratier","doi":"10.1109/EUROSIME.2013.6529977","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529977","url":null,"abstract":"We introduce a framework for computer-aided derivation of multi-scale models dedicated to arrays of microsystems. It relies on a combination of a asymptotic methods used in the field of partial differential equations with term rewriting techniques coming from computer science. In our approach, a multi-scale model derivation is characterized by the features taken into account in the asymptotic analyses. Its formulation consists in a derivation of a reference model associated to an elementary nominal model, and in a set of transformations to apply to this proof until it takes into account the wanted features. In addition to the reference model proof, the framework includes first order rewriting principles designed for asymptotic model derivations, and second order rewriting principles dedicated to transformations of model derivations. We apply the method to generate a family of homogenized models for second order elliptic equations with periodic coefficients that could be posed in multi-dimensional domains, with possibly multi-domains and/or thin domains. The transfer of asymptotic models into a finite element software package is illustrated through an example of a model of periodic cantilever arrays.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128580289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529972
M. Farghaly, V. Rochus, X. Rottenberg, U. S. Mohammed, H. Tilmans
In this paper, we demonstrate a novel 2-axes MEMS-based resonant magnetic field sensor. It is a compact magnetometer, build in a single MEMS layer, which measures the two in-plane components of magnetic field and this with equal relative sensitivity. Its principle of operation is based on Lorentz force acting on a current carrying conductor placed in a magnetic field B. The force is proportional to the magnetic field B and for this particular design it results in a torque exerted on the microstructure, resulting a rotation (teeter-tooter) motion of the structure, which on its turns is translated into a differential capacitance. The proposed magnetometer design fits a chip area less than 250[μm]×300[μm]. An analytical design approach is described to reach to the equal and maximal relative sensitivity. Using FEM simulations, A relative sensitivity 3547[T-1] was reached. The design makes that cross sensitivities between the 2-axes is as small as possible. Also, for the first time, we introduce an equivalent circuit of a torsional MEMS magnetometer. It was developed starting from the known transducers like electrodynamic and electrostatic transducers.
{"title":"Novel teeter-totter 2-axes MEMS magnetometer with equal sensitivities","authors":"M. Farghaly, V. Rochus, X. Rottenberg, U. S. Mohammed, H. Tilmans","doi":"10.1109/EUROSIME.2013.6529972","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529972","url":null,"abstract":"In this paper, we demonstrate a novel 2-axes MEMS-based resonant magnetic field sensor. It is a compact magnetometer, build in a single MEMS layer, which measures the two in-plane components of magnetic field and this with equal relative sensitivity. Its principle of operation is based on Lorentz force acting on a current carrying conductor placed in a magnetic field B. The force is proportional to the magnetic field B and for this particular design it results in a torque exerted on the microstructure, resulting a rotation (teeter-tooter) motion of the structure, which on its turns is translated into a differential capacitance. The proposed magnetometer design fits a chip area less than 250[μm]×300[μm]. An analytical design approach is described to reach to the equal and maximal relative sensitivity. Using FEM simulations, A relative sensitivity 3547[T-1] was reached. The design makes that cross sensitivities between the 2-axes is as small as possible. Also, for the first time, we introduce an equivalent circuit of a torsional MEMS magnetometer. It was developed starting from the known transducers like electrodynamic and electrostatic transducers.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116691448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529992
B. Vandevelde, A. Ivankovic, B. Debecker, M. Lofrano, K. Vanstreels, W. Guo, V. Cherman, M. Gonzalez, G. van der Plas, I. De Wolf, E. Beyne, Z. Tokei
Chip Package Interaction (CPI) gained a lot of importance in the last years. The reason is twofold. First, advanced node IC technologies requires dielectrics in the BEOL (back-end-of-line) with a decreasing k value. These so-called (ultra) low-k materials have a reduced stiffness and adhesion strength to the barrier materials, making the BEOL much more vulnerable to externally applied stress due to packaging. Secondly, advanced packaging technologies such as 3D stacked IC's use thinned dies (down to 25μm) which can cause much higher stresses at transistor level, resulting in mobility shifts.
{"title":"IC-Package Interaction","authors":"B. Vandevelde, A. Ivankovic, B. Debecker, M. Lofrano, K. Vanstreels, W. Guo, V. Cherman, M. Gonzalez, G. van der Plas, I. De Wolf, E. Beyne, Z. Tokei","doi":"10.1109/EUROSIME.2013.6529992","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529992","url":null,"abstract":"Chip Package Interaction (CPI) gained a lot of importance in the last years. The reason is twofold. First, advanced node IC technologies requires dielectrics in the BEOL (back-end-of-line) with a decreasing k value. These so-called (ultra) low-k materials have a reduced stiffness and adhesion strength to the barrier materials, making the BEOL much more vulnerable to externally applied stress due to packaging. Secondly, advanced packaging technologies such as 3D stacked IC's use thinned dies (down to 25μm) which can cause much higher stresses at transistor level, resulting in mobility shifts.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129107164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529902
D. Leslie, A. Dasgupta, J. D. de Vries
Moisture can be devastating for electronic components, causing corrosion and electrochemical metal migration, which leads to changes in resistance and short circuits. Although most products (the focus in this study is on solid state lighting products) have a sealed enclosure, the driver electronics are often not as well sealed against the environment. Moisture diffusion through surrounding sealants is a primary pathway of moisture ingress into the electronics enclosures. This study's focus is on quantifying the moisture diffusion rates for various sealant materials and on modeling the moisture ingress rates into sealed containers, using commercial FEA software. This paper also presents a simulation-assisted procedure to extract the moisture diffusion properties for the seal material because most seal structures (gaskets, O-rings, etc.) are not simple one-dimensional structures. The resulting geometric correction factor is obtained for toroidal O-rings of circular cross-section and also for elliptic cross-sections caused by compression forces.
{"title":"Quantifying moisture diffusion into three-dimensional axisymmetric sealants","authors":"D. Leslie, A. Dasgupta, J. D. de Vries","doi":"10.1109/EUROSIME.2013.6529902","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529902","url":null,"abstract":"Moisture can be devastating for electronic components, causing corrosion and electrochemical metal migration, which leads to changes in resistance and short circuits. Although most products (the focus in this study is on solid state lighting products) have a sealed enclosure, the driver electronics are often not as well sealed against the environment. Moisture diffusion through surrounding sealants is a primary pathway of moisture ingress into the electronics enclosures. This study's focus is on quantifying the moisture diffusion rates for various sealant materials and on modeling the moisture ingress rates into sealed containers, using commercial FEA software. This paper also presents a simulation-assisted procedure to extract the moisture diffusion properties for the seal material because most seal structures (gaskets, O-rings, etc.) are not simple one-dimensional structures. The resulting geometric correction factor is obtained for toroidal O-rings of circular cross-section and also for elliptic cross-sections caused by compression forces.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128920509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529975
N. Nabiollahi, C. Wilson, J. De Messemaeker, M. Gonzalez, K. Croes, E. Beyne, I. De Wolf
Using Finite element methods, a model to predict the Cu pumping in Through Silicon Vias (TSV) is built. The processes which a TSV undergoes after Cu electroplating are considered and the model is built in such a way that after each process sequence, the stress and strain data are transferred into the following sequence and used as input conditions. The stress and Cu pumping at the end of the simulations are extracted and compared with experimental results. This allows virtual studies and predictions of Cu pumping for different TSV geometries and the possible effects of Back-end of line (BEOL) layers.
{"title":"Simulation of Cu pumping during TSV fabrication","authors":"N. Nabiollahi, C. Wilson, J. De Messemaeker, M. Gonzalez, K. Croes, E. Beyne, I. De Wolf","doi":"10.1109/EUROSIME.2013.6529975","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529975","url":null,"abstract":"Using Finite element methods, a model to predict the Cu pumping in Through Silicon Vias (TSV) is built. The processes which a TSV undergoes after Cu electroplating are considered and the model is built in such a way that after each process sequence, the stress and strain data are transferred into the following sequence and used as input conditions. The stress and Cu pumping at the end of the simulations are extracted and compared with experimental results. This allows virtual studies and predictions of Cu pumping for different TSV geometries and the possible effects of Back-end of line (BEOL) layers.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131683702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-14DOI: 10.1109/EUROSIME.2013.6529970
R. Metasch, M. Roellig, A. Roehsler, C. Boehm, K. Wolter
The paper presents low cycle fatigue results and properties as measured by small solder joints in a shear test setup. These symmetrical triangle experiments were performed at 25 °C by the variation of the specimen's displacements and the solder joint materials. The displacements varied between 2 μm and 8 μm to get strains up to 2 % and stresses up to 40 MPa. The used solder ball alloys are SnAg3.5, SnAg3.0Cu0.75 and SnPb36. The strain rate was close to 1E-2 per second.
{"title":"Low cycle fatigue measurement results on real flip chip solder contacts","authors":"R. Metasch, M. Roellig, A. Roehsler, C. Boehm, K. Wolter","doi":"10.1109/EUROSIME.2013.6529970","DOIUrl":"https://doi.org/10.1109/EUROSIME.2013.6529970","url":null,"abstract":"The paper presents low cycle fatigue results and properties as measured by small solder joints in a shear test setup. These symmetrical triangle experiments were performed at 25 °C by the variation of the specimen's displacements and the solder joint materials. The displacements varied between 2 μm and 8 μm to get strains up to 2 % and stresses up to 40 MPa. The used solder ball alloys are SnAg3.5, SnAg3.0Cu0.75 and SnPb36. The strain rate was close to 1E-2 per second.","PeriodicalId":270532,"journal":{"name":"2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130342579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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