Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273155
Ina Toteva, A. Andonova
Gate-grounded NMOS is often used as ESD protection for circuit design. The ESD behavior of the NMOS transistor is based on the snapback action of its parasitic, lateral NPN BJT. Modeling this behavior of NMOS devices is very important for design of ICs, because there are no standard models, which can be used for describing high current regions in the NMOS snapback characteristic. In this paper an approach of modeling snapback characteristic of NMOS device, intended for use as ESD clamp in IC I/O cells, is proposed. The modeled snapback characteristic is simulated and evaluated using PSPICE.
{"title":"Modeling NMOS snapback characteristic using PSpice","authors":"Ina Toteva, A. Andonova","doi":"10.1109/ISSE.2012.6273155","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273155","url":null,"abstract":"Gate-grounded NMOS is often used as ESD protection for circuit design. The ESD behavior of the NMOS transistor is based on the snapback action of its parasitic, lateral NPN BJT. Modeling this behavior of NMOS devices is very important for design of ICs, because there are no standard models, which can be used for describing high current regions in the NMOS snapback characteristic. In this paper an approach of modeling snapback characteristic of NMOS device, intended for use as ESD clamp in IC I/O cells, is proposed. The modeled snapback characteristic is simulated and evaluated using PSPICE.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"103 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116503308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273117
P. Mashkov, B. Gyoch, H. Beloev, S. Penchev
The aims of this work are connected with development of new method of LEDs' mounting onto the heat sink in lighting equipment. The technique involves usage of copper pins instead of standard MCPCBs. LEDs are soldered on copper pins. Mounting of LEDs demands boring holes in the heat sink and fixing copper pins into the holes by thermal conductive epoxy resin only. LED lamp is made using new technology and LEDs' thermal performance investigations are made at various ambient conditions (air temperatures from 20°C to 45°C) and different current values through LEDs - up to 600 mA. Temperature regimes of operation of power LEDs soldered on MCPCBs and on copper pins (and mounted on heat sink) are experimentally tested and compared. Experimental results show that utilization of copper pins underneath LED thermal pads ensures good dissipation of heat, good manufacturability, enables varied designs of light equipment and is cost effective.
{"title":"LED lamp - design and thermal management investigations","authors":"P. Mashkov, B. Gyoch, H. Beloev, S. Penchev","doi":"10.1109/ISSE.2012.6273117","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273117","url":null,"abstract":"The aims of this work are connected with development of new method of LEDs' mounting onto the heat sink in lighting equipment. The technique involves usage of copper pins instead of standard MCPCBs. LEDs are soldered on copper pins. Mounting of LEDs demands boring holes in the heat sink and fixing copper pins into the holes by thermal conductive epoxy resin only. LED lamp is made using new technology and LEDs' thermal performance investigations are made at various ambient conditions (air temperatures from 20°C to 45°C) and different current values through LEDs - up to 600 mA. Temperature regimes of operation of power LEDs soldered on MCPCBs and on copper pins (and mounted on heat sink) are experimentally tested and compared. Experimental results show that utilization of copper pins underneath LED thermal pads ensures good dissipation of heat, good manufacturability, enables varied designs of light equipment and is cost effective.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124355771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273147
M. Winkelhoferova, V. Maříková, J. Tupa
This paper deals with improvement of diagnostic process and its time measurement. The aim is to develop a new methodology leads to complex improvement of diagnostics processes. This paper presents concrete diagnostics process and sample of application of designed methodology. This methodology was designed in connection to time measurement. The methodology combines for example statistical process control method for determination of steps in the specific process and for prevention before risks. As other tool, we chose setting of the KPI's (Key Performance Indicators) for specifying of the performance measurement. The methodology was verified on the process of soldering testing.
{"title":"Measuring and improvement of diagnostic processes by using KPI's and statistical method","authors":"M. Winkelhoferova, V. Maříková, J. Tupa","doi":"10.1109/ISSE.2012.6273147","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273147","url":null,"abstract":"This paper deals with improvement of diagnostic process and its time measurement. The aim is to develop a new methodology leads to complex improvement of diagnostics processes. This paper presents concrete diagnostics process and sample of application of designed methodology. This methodology was designed in connection to time measurement. The methodology combines for example statistical process control method for determination of steps in the specific process and for prevention before risks. As other tool, we chose setting of the KPI's (Key Performance Indicators) for specifying of the performance measurement. The methodology was verified on the process of soldering testing.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127420825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273097
A. Bonea, A. Brodeala, M. Vlădescu, P. Svasta
The work aims to assess the conductivity of Silver tracks printed using a state-of-the-art PixDro LP50 inkjet printer which has the capability to print conductive tracks with width as low as 50μm. The conductivity of tracks with different dimensions is measured using a Keithley measurement setup. The equivalent resistivity depends on the material, printing technology and geometrical dimensions. Profile measurements indicate a track thickness of around 300nm. The optimal printing resolution appears to be 450dpi, ensuring conductivity for all selected track widths from 50μm to 400μm. This paper analyses the influence of the layout on the electrical properties with a focus on determining the minimum metal quantity necessary to have tracks with good conductivity.
{"title":"Electrical conductivity of inkjet printed silver tracks","authors":"A. Bonea, A. Brodeala, M. Vlădescu, P. Svasta","doi":"10.1109/ISSE.2012.6273097","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273097","url":null,"abstract":"The work aims to assess the conductivity of Silver tracks printed using a state-of-the-art PixDro LP50 inkjet printer which has the capability to print conductive tracks with width as low as 50μm. The conductivity of tracks with different dimensions is measured using a Keithley measurement setup. The equivalent resistivity depends on the material, printing technology and geometrical dimensions. Profile measurements indicate a track thickness of around 300nm. The optimal printing resolution appears to be 450dpi, ensuring conductivity for all selected track widths from 50μm to 400μm. This paper analyses the influence of the layout on the electrical properties with a focus on determining the minimum metal quantity necessary to have tracks with good conductivity.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132840184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273135
R. Jano, D. Pitica, P. Svasta, G. Vărzaru
The influences of different soldering methods and specific thermal profiles were investigated on the lifetime of through hole capacitors. The behavior of aluminum electrolytic, ceramic and two capacitor types with different plastic dielectric capacitors were evaluated when using alternative soldering methods instead of the standard wave soldering process, such as vapour phase or infrared convection. The changes in the values of capacitance and ESR of the capacitors were monitored before and after soldering and the influence of the different techniques on their lifetimes was assessed.
{"title":"Effects of reflow soldering methods on the lifetime of capacitors","authors":"R. Jano, D. Pitica, P. Svasta, G. Vărzaru","doi":"10.1109/ISSE.2012.6273135","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273135","url":null,"abstract":"The influences of different soldering methods and specific thermal profiles were investigated on the lifetime of through hole capacitors. The behavior of aluminum electrolytic, ceramic and two capacitor types with different plastic dielectric capacitors were evaluated when using alternative soldering methods instead of the standard wave soldering process, such as vapour phase or infrared convection. The changes in the values of capacitance and ESR of the capacitors were monitored before and after soldering and the influence of the different techniques on their lifetimes was assessed.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124582907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273131
A. Klemm, M. Oppermann, T. Zerna
In 2002 a new EU directive called 2002/95/EG (RoHS) caused the electronics industries to change their production lines to lead free soldering processes. However, in some cases they are still using the same electronic components which are not certified for the significant higher temperatures of the lead free soldering process. This causes junk that can only be reduced by placing and soldering critical components separately. Since this is mostly done manually the production costs increase. It is therefore necessary to find out all the critical components and to identify the probability of failure for each of them. Since this task cannot be accomplished by one single company the publicly funded project TDMA was started. The project aims to develop special measurement devices and knowledge about damage mechanisms on electronic components due to high soldering temperatures. In this work a device is presented by which specific properties of electronic components under temperature stress test can be monitored continuously. It features the measurement of resistance, capacitance and inductance of the respective components and forward voltage of LEDs. The device is placed outside of the climate cabinet and controlled by a PC via a RS232 connection.
{"title":"Online-monitoring of electronic components under temperature stress test","authors":"A. Klemm, M. Oppermann, T. Zerna","doi":"10.1109/ISSE.2012.6273131","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273131","url":null,"abstract":"In 2002 a new EU directive called 2002/95/EG (RoHS) caused the electronics industries to change their production lines to lead free soldering processes. However, in some cases they are still using the same electronic components which are not certified for the significant higher temperatures of the lead free soldering process. This causes junk that can only be reduced by placing and soldering critical components separately. Since this is mostly done manually the production costs increase. It is therefore necessary to find out all the critical components and to identify the probability of failure for each of them. Since this task cannot be accomplished by one single company the publicly funded project TDMA was started. The project aims to develop special measurement devices and knowledge about damage mechanisms on electronic components due to high soldering temperatures. In this work a device is presented by which specific properties of electronic components under temperature stress test can be monitored continuously. It features the measurement of resistance, capacitance and inductance of the respective components and forward voltage of LEDs. The device is placed outside of the climate cabinet and controlled by a PC via a RS232 connection.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127646527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273172
D. Visan, I. Lita
In order to obtain a high degree of reliability and very good performances, the modern sensors must be capable to integrate in a single unit the logical control module, as well as conditioning and communication modules. In this paper we present the results obtained in the design and implementation of a reliable communication circuit based on pulse modulation techniques for transmission of signals from sensors. The proposed circuit is intended to be integrated in an intelligent sensor that is capable to condition and transmit the measured signal to a remote data acquisition system. By using this novel implementation based on pulse modulation techniques for transmission, is achieved higher immunity against the external electrical noises and the useful information can be easily and correctly recovered with a proper receiver. Also the proposed architecture allows the multiplex transmission on the same channel of the signals from multiple sensors.
{"title":"Communication circuit with pulse modulation for transmission of signals from sensors","authors":"D. Visan, I. Lita","doi":"10.1109/ISSE.2012.6273172","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273172","url":null,"abstract":"In order to obtain a high degree of reliability and very good performances, the modern sensors must be capable to integrate in a single unit the logical control module, as well as conditioning and communication modules. In this paper we present the results obtained in the design and implementation of a reliable communication circuit based on pulse modulation techniques for transmission of signals from sensors. The proposed circuit is intended to be integrated in an intelligent sensor that is capable to condition and transmit the measured signal to a remote data acquisition system. By using this novel implementation based on pulse modulation techniques for transmission, is achieved higher immunity against the external electrical noises and the useful information can be easily and correctly recovered with a proper receiver. Also the proposed architecture allows the multiplex transmission on the same channel of the signals from multiple sensors.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125854696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273095
I. Iuliia, B. Oleksandr, P. Oleg, Y. Yurij
One of the problems in MEMS devices design is proper choice of the mounting elements place. It is supposed that mountings beams should be placed in quasi nodes of disks asymmetric inplane displacements to minimize the loss through the supporting beams. In this paper is provided simulation of the thin piezoelectric disks particles asymmetric in-plane displacements considering its electrodes form. The place of quasi nodes was found for disks three first resonant frequencies.
{"title":"Choice of the mounting beams place considering MEMS disk asymmetric vibration","authors":"I. Iuliia, B. Oleksandr, P. Oleg, Y. Yurij","doi":"10.1109/ISSE.2012.6273095","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273095","url":null,"abstract":"One of the problems in MEMS devices design is proper choice of the mounting elements place. It is supposed that mountings beams should be placed in quasi nodes of disks asymmetric inplane displacements to minimize the loss through the supporting beams. In this paper is provided simulation of the thin piezoelectric disks particles asymmetric in-plane displacements considering its electrodes form. The place of quasi nodes was found for disks three first resonant frequencies.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125978359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273102
M. Perný, M. Mikolasek, V. Šály, J. Huran, J. Országh
Amorphous silicon carbide (a-SiC) thin films were prepared by PECVD deposition technique. A gas mixture of SiH4, CH4 and NH3 was directly introduced into the reaction chamber through a shower head. Properties of deposited films were studied by electrical measurement. Temperature dependences of forward (FW) current-voltage (I-V) characteristics of Al/a-SiC/c-Si(p)/Al structures are shown and analyzed in this paper. Parameters as saturation current and activation energies were measured and calculated from forward biased I-V curves. Identification of bonds at surface of amorphous layers by FTIR was presented.
{"title":"Current transport mechanisms of amorphous n-doped silicon carbide/crystalline silicon heterostructure: Impact of nitrogen dopation","authors":"M. Perný, M. Mikolasek, V. Šály, J. Huran, J. Országh","doi":"10.1109/ISSE.2012.6273102","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273102","url":null,"abstract":"Amorphous silicon carbide (a-SiC) thin films were prepared by PECVD deposition technique. A gas mixture of SiH4, CH4 and NH3 was directly introduced into the reaction chamber through a shower head. Properties of deposited films were studied by electrical measurement. Temperature dependences of forward (FW) current-voltage (I-V) characteristics of Al/a-SiC/c-Si(p)/Al structures are shown and analyzed in this paper. Parameters as saturation current and activation energies were measured and calculated from forward biased I-V curves. Identification of bonds at surface of amorphous layers by FTIR was presented.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126699098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273118
R. Glatz, P. Fulmek, J. Nicolics, S. Skerlan, M. Siegele, G. Radosavljevic
We discuss the measurement of temperature distributions using thermography, and its limitations due to wavelength and temperature dependent infrared-optical properties of the sample. A typical oxygen sensor has been realized by thick film technology: a platinum heater structure with integrated temperature sensor has been printed on a zirconia substrate. The variation of the temperature of the sensor with the applied heater current has been experimentally investigated by a three-wire resistance measurement and the application of two different high-resolution thermography systems. The first method is an easy and reliable direct method to obtain an average temperature value of the heater structure, whereas thermography gives the spatial distribution of the temperature. Thermography images of the sensor as-built and coated with a high-emissivity varnish are compared. Typical pitfalls in the interpretation of the thermal signature of the device under test resulting from unknown emission coefficients and semitransparency of the substrate material are discussed in detail.
{"title":"Comparison of two high-end infrared thermography systems with different spectral sensitivity for thermal investigations of sensor heater elements","authors":"R. Glatz, P. Fulmek, J. Nicolics, S. Skerlan, M. Siegele, G. Radosavljevic","doi":"10.1109/ISSE.2012.6273118","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273118","url":null,"abstract":"We discuss the measurement of temperature distributions using thermography, and its limitations due to wavelength and temperature dependent infrared-optical properties of the sample. A typical oxygen sensor has been realized by thick film technology: a platinum heater structure with integrated temperature sensor has been printed on a zirconia substrate. The variation of the temperature of the sensor with the applied heater current has been experimentally investigated by a three-wire resistance measurement and the application of two different high-resolution thermography systems. The first method is an easy and reliable direct method to obtain an average temperature value of the heater structure, whereas thermography gives the spatial distribution of the temperature. Thermography images of the sensor as-built and coated with a high-emissivity varnish are compared. Typical pitfalls in the interpretation of the thermal signature of the device under test resulting from unknown emission coefficients and semitransparency of the substrate material are discussed in detail.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130446544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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