Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273147
M. Winkelhoferova, V. Maříková, J. Tupa
This paper deals with improvement of diagnostic process and its time measurement. The aim is to develop a new methodology leads to complex improvement of diagnostics processes. This paper presents concrete diagnostics process and sample of application of designed methodology. This methodology was designed in connection to time measurement. The methodology combines for example statistical process control method for determination of steps in the specific process and for prevention before risks. As other tool, we chose setting of the KPI's (Key Performance Indicators) for specifying of the performance measurement. The methodology was verified on the process of soldering testing.
{"title":"Measuring and improvement of diagnostic processes by using KPI's and statistical method","authors":"M. Winkelhoferova, V. Maříková, J. Tupa","doi":"10.1109/ISSE.2012.6273147","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273147","url":null,"abstract":"This paper deals with improvement of diagnostic process and its time measurement. The aim is to develop a new methodology leads to complex improvement of diagnostics processes. This paper presents concrete diagnostics process and sample of application of designed methodology. This methodology was designed in connection to time measurement. The methodology combines for example statistical process control method for determination of steps in the specific process and for prevention before risks. As other tool, we chose setting of the KPI's (Key Performance Indicators) for specifying of the performance measurement. The methodology was verified on the process of soldering testing.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127420825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273093
T. Pencheva, B. Gyoch, P. Mashkov
The investigation deals with computer-aided design of antireflection coatings for photo receiving devices based on InGaAs. These types day and night vision detectors are sensitive and operate in spectral region 0.4 μm - 1.7 μm. Wide-band antireflection multilayer structures from two different materials of high and low refractive index transparent in upper mentioned spectral region are designed and analyzed.
{"title":"Day and night vision detectors - Design of antireflection coatings","authors":"T. Pencheva, B. Gyoch, P. Mashkov","doi":"10.1109/ISSE.2012.6273093","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273093","url":null,"abstract":"The investigation deals with computer-aided design of antireflection coatings for photo receiving devices based on InGaAs. These types day and night vision detectors are sensitive and operate in spectral region 0.4 μm - 1.7 μm. Wide-band antireflection multilayer structures from two different materials of high and low refractive index transparent in upper mentioned spectral region are designed and analyzed.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114175317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273126
O. Krammer, T. Garami
In our research, we performed comparative analyses concerning various lead-free SAC (SnAgCu) and micro-alloyed SAC (SnAgCu+Bi+Sb) solder alloys. The mechanical properties of these solder alloys were characterized by measuring the shear strength of 0603 (1.5 × 0.75 mm) size chip resistors' joints. We designed a testboard, which contains fifty pieces of 0603 size resistors. Thirty of them are intended for shear strength measurements and the remaining twenty are intended for cross-sectional analyses. During the experiment, twenty-eight pieces of testboards were soldered (seven with each solder alloy) and twenty-four of them are subjected to Thermal-Shock life time tests with temperature range of +125°C - -40°C up to 2 000 cycles. The shear strength of the solder joints was measured on aged samples to examine their reliability as well. The detailed results are presented in the paper.
{"title":"Reliability investigation of low silver content micro-alloyed SAC solders","authors":"O. Krammer, T. Garami","doi":"10.1109/ISSE.2012.6273126","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273126","url":null,"abstract":"In our research, we performed comparative analyses concerning various lead-free SAC (SnAgCu) and micro-alloyed SAC (SnAgCu+Bi+Sb) solder alloys. The mechanical properties of these solder alloys were characterized by measuring the shear strength of 0603 (1.5 × 0.75 mm) size chip resistors' joints. We designed a testboard, which contains fifty pieces of 0603 size resistors. Thirty of them are intended for shear strength measurements and the remaining twenty are intended for cross-sectional analyses. During the experiment, twenty-eight pieces of testboards were soldered (seven with each solder alloy) and twenty-four of them are subjected to Thermal-Shock life time tests with temperature range of +125°C - -40°C up to 2 000 cycles. The shear strength of the solder joints was measured on aged samples to examine their reliability as well. The detailed results are presented in the paper.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122964829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273120
A. Reithe, M. Munch, K. Wolter
The effects of plasma-treatment on the contact quality of the molybdenum back contact of flexible solar cells interconnected with isotropic conductive adhesives have been studied. The influence of the surface treatment on surface properties like roughness, contact angles and surface energies have been measured and flow characteristics have been analyzed. The contact resistances and microsections have been studied. Pre-treatment might help to increase the spreading of the freshly applied conductive adhesive on a surface, but also enhances the thickness of the polymer layer at the interface. Because the contact geometry largely depends on the dispensing parameter, it was also found that a highly thixotropic adhesive does not show significantly better wetting behavior on the treated surface. The samples without preliminary plasma treatment show better contact resistance in that case.
{"title":"Effect of surface treatment on the conductive adhesive interconnection of flexible solar cells","authors":"A. Reithe, M. Munch, K. Wolter","doi":"10.1109/ISSE.2012.6273120","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273120","url":null,"abstract":"The effects of plasma-treatment on the contact quality of the molybdenum back contact of flexible solar cells interconnected with isotropic conductive adhesives have been studied. The influence of the surface treatment on surface properties like roughness, contact angles and surface energies have been measured and flow characteristics have been analyzed. The contact resistances and microsections have been studied. Pre-treatment might help to increase the spreading of the freshly applied conductive adhesive on a surface, but also enhances the thickness of the polymer layer at the interface. Because the contact geometry largely depends on the dispensing parameter, it was also found that a highly thixotropic adhesive does not show significantly better wetting behavior on the treated surface. The samples without preliminary plasma treatment show better contact resistance in that case.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123091800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273135
R. Jano, D. Pitica, P. Svasta, G. Vărzaru
The influences of different soldering methods and specific thermal profiles were investigated on the lifetime of through hole capacitors. The behavior of aluminum electrolytic, ceramic and two capacitor types with different plastic dielectric capacitors were evaluated when using alternative soldering methods instead of the standard wave soldering process, such as vapour phase or infrared convection. The changes in the values of capacitance and ESR of the capacitors were monitored before and after soldering and the influence of the different techniques on their lifetimes was assessed.
{"title":"Effects of reflow soldering methods on the lifetime of capacitors","authors":"R. Jano, D. Pitica, P. Svasta, G. Vărzaru","doi":"10.1109/ISSE.2012.6273135","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273135","url":null,"abstract":"The influences of different soldering methods and specific thermal profiles were investigated on the lifetime of through hole capacitors. The behavior of aluminum electrolytic, ceramic and two capacitor types with different plastic dielectric capacitors were evaluated when using alternative soldering methods instead of the standard wave soldering process, such as vapour phase or infrared convection. The changes in the values of capacitance and ESR of the capacitors were monitored before and after soldering and the influence of the different techniques on their lifetimes was assessed.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124582907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273131
A. Klemm, M. Oppermann, T. Zerna
In 2002 a new EU directive called 2002/95/EG (RoHS) caused the electronics industries to change their production lines to lead free soldering processes. However, in some cases they are still using the same electronic components which are not certified for the significant higher temperatures of the lead free soldering process. This causes junk that can only be reduced by placing and soldering critical components separately. Since this is mostly done manually the production costs increase. It is therefore necessary to find out all the critical components and to identify the probability of failure for each of them. Since this task cannot be accomplished by one single company the publicly funded project TDMA was started. The project aims to develop special measurement devices and knowledge about damage mechanisms on electronic components due to high soldering temperatures. In this work a device is presented by which specific properties of electronic components under temperature stress test can be monitored continuously. It features the measurement of resistance, capacitance and inductance of the respective components and forward voltage of LEDs. The device is placed outside of the climate cabinet and controlled by a PC via a RS232 connection.
{"title":"Online-monitoring of electronic components under temperature stress test","authors":"A. Klemm, M. Oppermann, T. Zerna","doi":"10.1109/ISSE.2012.6273131","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273131","url":null,"abstract":"In 2002 a new EU directive called 2002/95/EG (RoHS) caused the electronics industries to change their production lines to lead free soldering processes. However, in some cases they are still using the same electronic components which are not certified for the significant higher temperatures of the lead free soldering process. This causes junk that can only be reduced by placing and soldering critical components separately. Since this is mostly done manually the production costs increase. It is therefore necessary to find out all the critical components and to identify the probability of failure for each of them. Since this task cannot be accomplished by one single company the publicly funded project TDMA was started. The project aims to develop special measurement devices and knowledge about damage mechanisms on electronic components due to high soldering temperatures. In this work a device is presented by which specific properties of electronic components under temperature stress test can be monitored continuously. It features the measurement of resistance, capacitance and inductance of the respective components and forward voltage of LEDs. The device is placed outside of the climate cabinet and controlled by a PC via a RS232 connection.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127646527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273172
D. Visan, I. Lita
In order to obtain a high degree of reliability and very good performances, the modern sensors must be capable to integrate in a single unit the logical control module, as well as conditioning and communication modules. In this paper we present the results obtained in the design and implementation of a reliable communication circuit based on pulse modulation techniques for transmission of signals from sensors. The proposed circuit is intended to be integrated in an intelligent sensor that is capable to condition and transmit the measured signal to a remote data acquisition system. By using this novel implementation based on pulse modulation techniques for transmission, is achieved higher immunity against the external electrical noises and the useful information can be easily and correctly recovered with a proper receiver. Also the proposed architecture allows the multiplex transmission on the same channel of the signals from multiple sensors.
{"title":"Communication circuit with pulse modulation for transmission of signals from sensors","authors":"D. Visan, I. Lita","doi":"10.1109/ISSE.2012.6273172","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273172","url":null,"abstract":"In order to obtain a high degree of reliability and very good performances, the modern sensors must be capable to integrate in a single unit the logical control module, as well as conditioning and communication modules. In this paper we present the results obtained in the design and implementation of a reliable communication circuit based on pulse modulation techniques for transmission of signals from sensors. The proposed circuit is intended to be integrated in an intelligent sensor that is capable to condition and transmit the measured signal to a remote data acquisition system. By using this novel implementation based on pulse modulation techniques for transmission, is achieved higher immunity against the external electrical noises and the useful information can be easily and correctly recovered with a proper receiver. Also the proposed architecture allows the multiplex transmission on the same channel of the signals from multiple sensors.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125854696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273095
I. Iuliia, B. Oleksandr, P. Oleg, Y. Yurij
One of the problems in MEMS devices design is proper choice of the mounting elements place. It is supposed that mountings beams should be placed in quasi nodes of disks asymmetric inplane displacements to minimize the loss through the supporting beams. In this paper is provided simulation of the thin piezoelectric disks particles asymmetric in-plane displacements considering its electrodes form. The place of quasi nodes was found for disks three first resonant frequencies.
{"title":"Choice of the mounting beams place considering MEMS disk asymmetric vibration","authors":"I. Iuliia, B. Oleksandr, P. Oleg, Y. Yurij","doi":"10.1109/ISSE.2012.6273095","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273095","url":null,"abstract":"One of the problems in MEMS devices design is proper choice of the mounting elements place. It is supposed that mountings beams should be placed in quasi nodes of disks asymmetric inplane displacements to minimize the loss through the supporting beams. In this paper is provided simulation of the thin piezoelectric disks particles asymmetric in-plane displacements considering its electrodes form. The place of quasi nodes was found for disks three first resonant frequencies.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125978359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273102
M. Perný, M. Mikolasek, V. Šály, J. Huran, J. Országh
Amorphous silicon carbide (a-SiC) thin films were prepared by PECVD deposition technique. A gas mixture of SiH4, CH4 and NH3 was directly introduced into the reaction chamber through a shower head. Properties of deposited films were studied by electrical measurement. Temperature dependences of forward (FW) current-voltage (I-V) characteristics of Al/a-SiC/c-Si(p)/Al structures are shown and analyzed in this paper. Parameters as saturation current and activation energies were measured and calculated from forward biased I-V curves. Identification of bonds at surface of amorphous layers by FTIR was presented.
{"title":"Current transport mechanisms of amorphous n-doped silicon carbide/crystalline silicon heterostructure: Impact of nitrogen dopation","authors":"M. Perný, M. Mikolasek, V. Šály, J. Huran, J. Országh","doi":"10.1109/ISSE.2012.6273102","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273102","url":null,"abstract":"Amorphous silicon carbide (a-SiC) thin films were prepared by PECVD deposition technique. A gas mixture of SiH4, CH4 and NH3 was directly introduced into the reaction chamber through a shower head. Properties of deposited films were studied by electrical measurement. Temperature dependences of forward (FW) current-voltage (I-V) characteristics of Al/a-SiC/c-Si(p)/Al structures are shown and analyzed in this paper. Parameters as saturation current and activation energies were measured and calculated from forward biased I-V curves. Identification of bonds at surface of amorphous layers by FTIR was presented.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126699098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-09DOI: 10.1109/ISSE.2012.6273118
R. Glatz, P. Fulmek, J. Nicolics, S. Skerlan, M. Siegele, G. Radosavljevic
We discuss the measurement of temperature distributions using thermography, and its limitations due to wavelength and temperature dependent infrared-optical properties of the sample. A typical oxygen sensor has been realized by thick film technology: a platinum heater structure with integrated temperature sensor has been printed on a zirconia substrate. The variation of the temperature of the sensor with the applied heater current has been experimentally investigated by a three-wire resistance measurement and the application of two different high-resolution thermography systems. The first method is an easy and reliable direct method to obtain an average temperature value of the heater structure, whereas thermography gives the spatial distribution of the temperature. Thermography images of the sensor as-built and coated with a high-emissivity varnish are compared. Typical pitfalls in the interpretation of the thermal signature of the device under test resulting from unknown emission coefficients and semitransparency of the substrate material are discussed in detail.
{"title":"Comparison of two high-end infrared thermography systems with different spectral sensitivity for thermal investigations of sensor heater elements","authors":"R. Glatz, P. Fulmek, J. Nicolics, S. Skerlan, M. Siegele, G. Radosavljevic","doi":"10.1109/ISSE.2012.6273118","DOIUrl":"https://doi.org/10.1109/ISSE.2012.6273118","url":null,"abstract":"We discuss the measurement of temperature distributions using thermography, and its limitations due to wavelength and temperature dependent infrared-optical properties of the sample. A typical oxygen sensor has been realized by thick film technology: a platinum heater structure with integrated temperature sensor has been printed on a zirconia substrate. The variation of the temperature of the sensor with the applied heater current has been experimentally investigated by a three-wire resistance measurement and the application of two different high-resolution thermography systems. The first method is an easy and reliable direct method to obtain an average temperature value of the heater structure, whereas thermography gives the spatial distribution of the temperature. Thermography images of the sensor as-built and coated with a high-emissivity varnish are compared. Typical pitfalls in the interpretation of the thermal signature of the device under test resulting from unknown emission coefficients and semitransparency of the substrate material are discussed in detail.","PeriodicalId":277579,"journal":{"name":"2012 35th International Spring Seminar on Electronics Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130446544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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