Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118337
Srishti Parandiyal, Anamika Singh, Kumar Sheelvardhan, Surila Guglani, M. Ehteshamuddin, Sourajeet Roy, A. Dasgupta
In this paper, a novel artificial neural network (ANN) has been developed for the efficient variation-aware modeling of current-voltage (I-V) characteristics of general nanoscale devices. The key innovation of this work lies in the development of a new control variate strategy to significantly shrink the number of technology computer-aided design (TCAD) device simulations required to train the ANN model. Consequently, the proposed ANN model can emulate the drain current of the target device as analytic functions of the device geometry, material, and bias voltages at much smaller computational costs than conventional ANN models. A validation example of a 14nm fin field effect transistor (FinFET) is provided in this paper.
{"title":"An Efficient Variability-Aware Control Variate-Assisted Neural Network Model for Advanced Nanoscale Transistors","authors":"Srishti Parandiyal, Anamika Singh, Kumar Sheelvardhan, Surila Guglani, M. Ehteshamuddin, Sourajeet Roy, A. Dasgupta","doi":"10.1109/ICEE56203.2022.10118337","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118337","url":null,"abstract":"In this paper, a novel artificial neural network (ANN) has been developed for the efficient variation-aware modeling of current-voltage (I-V) characteristics of general nanoscale devices. The key innovation of this work lies in the development of a new control variate strategy to significantly shrink the number of technology computer-aided design (TCAD) device simulations required to train the ANN model. Consequently, the proposed ANN model can emulate the drain current of the target device as analytic functions of the device geometry, material, and bias voltages at much smaller computational costs than conventional ANN models. A validation example of a 14nm fin field effect transistor (FinFET) is provided in this paper.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"15 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128669804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117937
Roopesh Singh, Sumit Purkait, S. Verma
Ferroelectricity in HZO-based thin films and its integration of ferroelectric field effect transistors (FeFET) into standard CMOS platforms has germinated new prospects in the field of non-volatile memory and non-volatile computing. The FeFET has emerged from a theoretical concept to many experimental demonstrations in recent years. FeFETs can be widely used in a variety of fields, including non-volatile memory, neuromorphic computing, logic-in-memory (LiM), and others. This paper proposes a novel silicon-on-insulator (SOI) based junction-less ferroelectric field effect transistor (JLFeFET). Further, an investigation of a non-volatile latch for non-volatile logic-in memory computing is also done using the proposed JLFeFET. The proposed JLFeFET offers huge possibilities for the design of low-power and high-speed non-volatile logic-in-memory applications. Using the TCAD simulations, JLFeFET of 20 nm HfO2 thickness has been demonstrated that achieves a memory window (MW) of 0.34 V. The fabrication flow is also proposed with an easy integration of the JLFeFET device in silicon-on-insulator (SOI) process. Further, the proposed non-volatile latch with JLFeFET displays significantly low power with respect to its non-volatile counterpart implemented using magnetic tunnel junction (MTJ) devices.
{"title":"Junction Less Ferroelectric FET on FDSOI for Non-Volatile Logic-In-Memory Applications","authors":"Roopesh Singh, Sumit Purkait, S. Verma","doi":"10.1109/ICEE56203.2022.10117937","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117937","url":null,"abstract":"Ferroelectricity in HZO-based thin films and its integration of ferroelectric field effect transistors (FeFET) into standard CMOS platforms has germinated new prospects in the field of non-volatile memory and non-volatile computing. The FeFET has emerged from a theoretical concept to many experimental demonstrations in recent years. FeFETs can be widely used in a variety of fields, including non-volatile memory, neuromorphic computing, logic-in-memory (LiM), and others. This paper proposes a novel silicon-on-insulator (SOI) based junction-less ferroelectric field effect transistor (JLFeFET). Further, an investigation of a non-volatile latch for non-volatile logic-in memory computing is also done using the proposed JLFeFET. The proposed JLFeFET offers huge possibilities for the design of low-power and high-speed non-volatile logic-in-memory applications. Using the TCAD simulations, JLFeFET of 20 nm HfO2 thickness has been demonstrated that achieves a memory window (MW) of 0.34 V. The fabrication flow is also proposed with an easy integration of the JLFeFET device in silicon-on-insulator (SOI) process. Further, the proposed non-volatile latch with JLFeFET displays significantly low power with respect to its non-volatile counterpart implemented using magnetic tunnel junction (MTJ) devices.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129678714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117614
Pritom J. Bora, Bibhusita Mahanta, K. K., Praveen C Ramamurthy
In this work, a strong microwave absorption characteristic viz., minimum reflection loss (RL) -69.5 dB (8.2-12.4 GHz absorption bandwidth i.e., RL< -10 dB) is evaluated for the bi-layered polyvinyl butyral (PVB)-polyaniline (PANI) coated fly ash cenosphere (FAC) composite. Materials data-driven approach is used to model and optimize the associated parameters (based on an experimental evaluation), and hence to realize the best RL. The outstanding RL performance is achieved for the 10 wt% PANI-FAC loaded PVB (top layer, thickness 1.5 mm) and 6 wt% PANI-FAC loaded PVB (a bottom layer, thickness 2 mm).
{"title":"Design of Bi-Layered Strong Microwave Absorber Based on Polymer-Fly Ash Cenosphere Composite With A Data-Driven Approach","authors":"Pritom J. Bora, Bibhusita Mahanta, K. K., Praveen C Ramamurthy","doi":"10.1109/ICEE56203.2022.10117614","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117614","url":null,"abstract":"In this work, a strong microwave absorption characteristic viz., minimum reflection loss (RL) -69.5 dB (8.2-12.4 GHz absorption bandwidth i.e., RL< -10 dB) is evaluated for the bi-layered polyvinyl butyral (PVB)-polyaniline (PANI) coated fly ash cenosphere (FAC) composite. Materials data-driven approach is used to model and optimize the associated parameters (based on an experimental evaluation), and hence to realize the best RL. The outstanding RL performance is achieved for the 10 wt% PANI-FAC loaded PVB (top layer, thickness 1.5 mm) and 6 wt% PANI-FAC loaded PVB (a bottom layer, thickness 2 mm).","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129684296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117613
H. Ulla, Krishnamanohara, P. Yadav, Madhu Seetharaman, Rita Rana, Gopika G. Pillai, Bodduri Venkata Durga Vijaykumar, Sanjeevkumar Nalluri, Maheshkumar Uppada, Saikat Sen, Srinivas Oruganti, M. Balakrishnan, M. Katiyar
To fabricate fully solution-processed small-molecule organic light-emitting diodes (OLEDs), we investigate the slot-die coating technique for the small-molecule electron transport layer (ETL). 2,2’,2”-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) was dissolved in methanol and slot-die coated as ETL and applied in multilayer OLEDs with small-molecule Bis(4-phenylthieno[3,2-c]pyridinato-N, C2’) (acetylacetonate) iridium(III) (PO-01) doped in 4,4’-Bis(carbazol-9-yl)biphenyl (CBP) host as an emissive layer. The ETL provides efficient electron injection and electron transport ability in the devices. The efficiency of the devices with the combination of ETL and Ca/Al cathode reaches 0.8 cd/A at 1000 cd/m2.
为了制造全溶液处理的小分子有机发光二极管(oled)，我们研究了小分子电子传输层(ETL)的槽模涂层技术。将2,2 '，2 " -(1,3,5-苯三基)-三(1-苯基-1- h -苯并咪唑)(TPBi)溶解于甲醇中，并将其作为ETL包覆在槽模中，应用于以4,4 ' -双(咔唑-9-基)联苯(CBP)为发射层的小分子双(4-苯基噻吩[3,2-c]吡啶- n, C2 ')(乙酰丙酮)铱(III) (PO-01)掺杂的多层oled中。ETL为器件提供了高效的电子注入和电子传递能力。在1000 cd/m2时，ETL和Ca/Al阴极组合的器件效率达到0.8 cd/A。
{"title":"Solution-Processed Organic Light-Emitting Diodes With Slot-Die Coated Electron Transport Layer","authors":"H. Ulla, Krishnamanohara, P. Yadav, Madhu Seetharaman, Rita Rana, Gopika G. Pillai, Bodduri Venkata Durga Vijaykumar, Sanjeevkumar Nalluri, Maheshkumar Uppada, Saikat Sen, Srinivas Oruganti, M. Balakrishnan, M. Katiyar","doi":"10.1109/ICEE56203.2022.10117613","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117613","url":null,"abstract":"To fabricate fully solution-processed small-molecule organic light-emitting diodes (OLEDs), we investigate the slot-die coating technique for the small-molecule electron transport layer (ETL). 2,2’,2”-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) was dissolved in methanol and slot-die coated as ETL and applied in multilayer OLEDs with small-molecule Bis(4-phenylthieno[3,2-c]pyridinato-N, C2’) (acetylacetonate) iridium(III) (PO-01) doped in 4,4’-Bis(carbazol-9-yl)biphenyl (CBP) host as an emissive layer. The ETL provides efficient electron injection and electron transport ability in the devices. The efficiency of the devices with the combination of ETL and Ca/Al cathode reaches 0.8 cd/A at 1000 cd/m2.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126820318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118151
Akanksha Angural, J. Ghosh
The study, generation, and application of squeezed states of light has been a widely researched area in quantum optics. Vacuum fluctuations or photon shot noise quantified in terms of quadrature operators, impose a quantum limit on the sensitivity of quantum sensing and quantum communication systems. Thus, squeezing the quadratures reduces the quantum uncertainty in a particular quadrature. The amount of squeezing is, however, highly limited by the optics in the experiments and the performance of the balanced homodyne detection (BHD) systems employed for the detection of the squeezed states of light. In this paper, we have analytically studied the steady state, transient and noise responses of the balanced homodyne detection (BHD) circuitry by comparing two configurations i.e., a variable gain circuit with a differential amplifier and a current subtracting circuit with differential fine-tuning circuit (DFTC) and an adjustable bias (ABV). The current subtracting circuit design with DFTC and ABV has been adopted from Xiaoli et al. [1] in order to compensate for any differences in the photodiode performance characteristics in the two arms. A variable gain configuration is used to compensate for the unequal beam splitter ratio and uneven optical powers in the two arms. In order to further improve the noise performance of the system, a differential amplifier is used in the output of the variable gain configuration. A high transimpedance gain (~>70 dB) and a low noise (~<500nV/ √ Hz) performance can be achieved using these circuits as per our analysis.
{"title":"Balanced homodyne detection circuit design analysis for high gain and low noise performance","authors":"Akanksha Angural, J. Ghosh","doi":"10.1109/ICEE56203.2022.10118151","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118151","url":null,"abstract":"The study, generation, and application of squeezed states of light has been a widely researched area in quantum optics. Vacuum fluctuations or photon shot noise quantified in terms of quadrature operators, impose a quantum limit on the sensitivity of quantum sensing and quantum communication systems. Thus, squeezing the quadratures reduces the quantum uncertainty in a particular quadrature. The amount of squeezing is, however, highly limited by the optics in the experiments and the performance of the balanced homodyne detection (BHD) systems employed for the detection of the squeezed states of light. In this paper, we have analytically studied the steady state, transient and noise responses of the balanced homodyne detection (BHD) circuitry by comparing two configurations i.e., a variable gain circuit with a differential amplifier and a current subtracting circuit with differential fine-tuning circuit (DFTC) and an adjustable bias (ABV). The current subtracting circuit design with DFTC and ABV has been adopted from Xiaoli et al. [1] in order to compensate for any differences in the photodiode performance characteristics in the two arms. A variable gain configuration is used to compensate for the unequal beam splitter ratio and uneven optical powers in the two arms. In order to further improve the noise performance of the system, a differential amplifier is used in the output of the variable gain configuration. A high transimpedance gain (~>70 dB) and a low noise (~<500nV/ √ Hz) performance can be achieved using these circuits as per our analysis.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126876871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117888
S. P. Rath, Sreetosh Goswami, S. Goswami
Molecular memristor comprising a Ru-coordinated bis ligated complex has been designed. Depending on different operating conditions such as Voltage and temperature, its current-voltage characteristics changes gradually. Whereas the voltage helps to achieve different molecular conductance states, temperature variation from 300K to 4K can control various supramolecular dynamical components. Imposing different operating conditions can lead to practically all the possible memristive functionalities starting from bipolar, unipolar, volatile, non-volatile, ternary, and binary responses with gradual analog and sharp digital transitions as well as diode characteristics. A mathematical model comprising of multiple parameter design space has been constructed to model all these characteristics.
{"title":"A Multifaceted Molecular Memristor","authors":"S. P. Rath, Sreetosh Goswami, S. Goswami","doi":"10.1109/ICEE56203.2022.10117888","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117888","url":null,"abstract":"Molecular memristor comprising a Ru-coordinated bis ligated complex has been designed. Depending on different operating conditions such as Voltage and temperature, its current-voltage characteristics changes gradually. Whereas the voltage helps to achieve different molecular conductance states, temperature variation from 300K to 4K can control various supramolecular dynamical components. Imposing different operating conditions can lead to practically all the possible memristive functionalities starting from bipolar, unipolar, volatile, non-volatile, ternary, and binary responses with gradual analog and sharp digital transitions as well as diode characteristics. A mathematical model comprising of multiple parameter design space has been constructed to model all these characteristics.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116268980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117948
Sandeep Kumar, R. Kant, Nisheka Anadkat, Mahek Mehta, V. Pawar, S. Avasthi
NiOx is one of the potential alternates for organic hole transport (HTL) layer in perovskite solar cells (PSCs) due to its low-cost and chemical stability. Inherent insulating properties of NiOx, and requirement of post-processing steps in its solution processing are the limiting factors which restricts its routine use for further development and applications. This work reports sputtered NiOx as HTL in n-i-p configured PSC having stainless-steel as a substrate. The best device showed a power conversion efficiency of 5.37%. It exhibited a short-circuit current density (Jsc) of −9.58 mA/cm2, open circuit voltage (Voc) of 0.97V and a fill-factor (FF) of 58%. Due to the opaque nature of steel substrate, a semi-transparent ≈10 nm thin Au was thermally deposited as a top-transparent illumination contact. The poor performance of the device is mainly attributed to the poor transparency of the thin top-metal contact.
{"title":"Sputtered NiOx as a Hole Transport Layer in n-i-p Perovskite Solar Cells Manufactured on Steel Substrate","authors":"Sandeep Kumar, R. Kant, Nisheka Anadkat, Mahek Mehta, V. Pawar, S. Avasthi","doi":"10.1109/ICEE56203.2022.10117948","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117948","url":null,"abstract":"NiOx is one of the potential alternates for organic hole transport (HTL) layer in perovskite solar cells (PSCs) due to its low-cost and chemical stability. Inherent insulating properties of NiOx, and requirement of post-processing steps in its solution processing are the limiting factors which restricts its routine use for further development and applications. This work reports sputtered NiOx as HTL in n-i-p configured PSC having stainless-steel as a substrate. The best device showed a power conversion efficiency of 5.37%. It exhibited a short-circuit current density (Jsc) of −9.58 mA/cm2, open circuit voltage (Voc) of 0.97V and a fill-factor (FF) of 58%. Due to the opaque nature of steel substrate, a semi-transparent ≈10 nm thin Au was thermally deposited as a top-transparent illumination contact. The poor performance of the device is mainly attributed to the poor transparency of the thin top-metal contact.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134011633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118298
Indrajit Das, Shashank Tiwari, K. T. M. Shafi, Varuna Baipadi, V. Vanukuru
This paper presents a 28 GHz source-degenerated cascode low noise amplifier (LNA) in 22 nm fully depleted silicon on insulator (FDSOI) technology with a redistribution layer (RDL) gate inductor. In a source-degenerated cascode LNA, high quality factor (Q) of the gate inductor is necessary to achieve a low noise figure (NF). However, it is hard to push the quality factor of an on-chip inductor beyond a point. This work demonstrates that very high Q inductors can be realized using a multi-layer RDL technology. Taking advantage of the designed high Q RDL inductor, the NF of a millimeter-wave (mmWave) LNA is significantly reduced. Overall, the designed single-stage LNA achieves a 1.29 dB NF, 12.2 dB gain at 28 GHz, with a DC power consumption of 7.7 mW only.
{"title":"A 1.3 dB NF 7.7 mW 28 GHz LNA in 22 nm FDSOI Technology using Redistribution Layer Gate Inductor","authors":"Indrajit Das, Shashank Tiwari, K. T. M. Shafi, Varuna Baipadi, V. Vanukuru","doi":"10.1109/ICEE56203.2022.10118298","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118298","url":null,"abstract":"This paper presents a 28 GHz source-degenerated cascode low noise amplifier (LNA) in 22 nm fully depleted silicon on insulator (FDSOI) technology with a redistribution layer (RDL) gate inductor. In a source-degenerated cascode LNA, high quality factor (Q) of the gate inductor is necessary to achieve a low noise figure (NF). However, it is hard to push the quality factor of an on-chip inductor beyond a point. This work demonstrates that very high Q inductors can be realized using a multi-layer RDL technology. Taking advantage of the designed high Q RDL inductor, the NF of a millimeter-wave (mmWave) LNA is significantly reduced. Overall, the designed single-stage LNA achieves a 1.29 dB NF, 12.2 dB gain at 28 GHz, with a DC power consumption of 7.7 mW only.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134002043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117857
Soumyajyoti Mallick, D. R. Chowdhury
We propose a multilayer meta-device in metal/insulator/metal configuration that exploits broadside coupling of the incident THz radiation to the metastructure mediated through the VO2 spacer layer. We theoretically demonstrate that, by changing the field strength of the incident radiation, the field confinement and thus, the spectral response of the structure can be modulated by means of initiating insulator to metal phase transition in VO2 spacer layer by exploiting the strong electron-electron correlation in such structures. Hence, the all-optical modulation of the THz field can be attained by means of active tuning. The outcomes of our work hold tremendous potential in attaining active control of metamaterials by all-optical route as well as pave the way for ultrafast sensing, switching applications and nonlinear studies.
{"title":"Terahertz field driven active switching in vanadium dioxide-based multilayer metasurfaces","authors":"Soumyajyoti Mallick, D. R. Chowdhury","doi":"10.1109/ICEE56203.2022.10117857","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117857","url":null,"abstract":"We propose a multilayer meta-device in metal/insulator/metal configuration that exploits broadside coupling of the incident THz radiation to the metastructure mediated through the VO2 spacer layer. We theoretically demonstrate that, by changing the field strength of the incident radiation, the field confinement and thus, the spectral response of the structure can be modulated by means of initiating insulator to metal phase transition in VO2 spacer layer by exploiting the strong electron-electron correlation in such structures. Hence, the all-optical modulation of the THz field can be attained by means of active tuning. The outcomes of our work hold tremendous potential in attaining active control of metamaterials by all-optical route as well as pave the way for ultrafast sensing, switching applications and nonlinear studies.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127628368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118076
Shaona Bose, S. Mahato, B. Roy, A. Ghorai, Sanjeev Srivastava, N. Das, S. Ray
Ambient stability is a serious unresolved issue with recently trending all-inorganic perovskite materials, especially CsPbI3 which has a high tendency to get converted from the black phase to the yellow delta or nonperovskite phase. So here we have demonstrated successful doping-induced phase transformation from the metastable mixed phase to the stable cubic phase CsPbI3 by optimizing its tolerance factor. Smaller size of dopant Cu atom in pristine CsPbI3 leads to a significant enhancement of the structural and optical stability of CsPbI3 which can thus be used for fabricating solar cells and other optoelectronic devices.
{"title":"Doping-induced phase transformation in all-inorganic perovskite CsPbI3 with enhanced structural and optical stability","authors":"Shaona Bose, S. Mahato, B. Roy, A. Ghorai, Sanjeev Srivastava, N. Das, S. Ray","doi":"10.1109/ICEE56203.2022.10118076","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118076","url":null,"abstract":"Ambient stability is a serious unresolved issue with recently trending all-inorganic perovskite materials, especially CsPbI3 which has a high tendency to get converted from the black phase to the yellow delta or nonperovskite phase. So here we have demonstrated successful doping-induced phase transformation from the metastable mixed phase to the stable cubic phase CsPbI3 by optimizing its tolerance factor. Smaller size of dopant Cu atom in pristine CsPbI3 leads to a significant enhancement of the structural and optical stability of CsPbI3 which can thus be used for fabricating solar cells and other optoelectronic devices.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131213576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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