Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117949
S. Chauhan, N. Beigh, Dibyajyoti Mukherjee, D. Mallick
The interest in flexible vibrational energy harvesters is continuously increasing due to their low cost, biocompatibility, and environmental friendliness. This paper presents the optimization of PVDF-TrFE nanocomposite thin film in which barium titanate (BTO) is added as a functional material for the transformation of inherent α to highly piezoelectric β phase. The PVDF-TrFE and BTO are dispersed in dimethyl sulfoxide (DMSO) and spin-coated on a Molybdenum/polyethylene terephthalate sheet (Mo/PET). The composition and crystallinity are varied to optimize the growth of PVDF-TrFE and BTO/PVDF-TrFE films. X-ray diffraction (XRD) is used to characterize the spin-coated films' β phase. The field emission scanning electron microscope (FE-SEM) is utilized to characterize the film's uniformity. The Fourier Fourier-transform infrared spectroscopy (FTIR) is used to detect the transmittance in the wavenumber range from 400 to 1500 cm-1 of spin-coated BTO/PVDF-TrFE thin films. The piezo response force microscopy (PFM) measurement of films with different weight % and compositions is performed to identify the energy harvesting ability. It is found that the film deposited with 15% BTO in 15% PVDF-TrFE shows the best piezoelectric response. The piezoelectricity coefficient (d31) is found to be 1.29 nm/V, showing the excellent ability of polymer film to harvest vibrational energy available in the environment.
{"title":"Development and Optimization of Highly Piezoelectric BTO/PVDF-TrFE Nanocomposite Film for Energy Harvesting Application","authors":"S. Chauhan, N. Beigh, Dibyajyoti Mukherjee, D. Mallick","doi":"10.1109/ICEE56203.2022.10117949","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117949","url":null,"abstract":"The interest in flexible vibrational energy harvesters is continuously increasing due to their low cost, biocompatibility, and environmental friendliness. This paper presents the optimization of PVDF-TrFE nanocomposite thin film in which barium titanate (BTO) is added as a functional material for the transformation of inherent α to highly piezoelectric β phase. The PVDF-TrFE and BTO are dispersed in dimethyl sulfoxide (DMSO) and spin-coated on a Molybdenum/polyethylene terephthalate sheet (Mo/PET). The composition and crystallinity are varied to optimize the growth of PVDF-TrFE and BTO/PVDF-TrFE films. X-ray diffraction (XRD) is used to characterize the spin-coated films' β phase. The field emission scanning electron microscope (FE-SEM) is utilized to characterize the film's uniformity. The Fourier Fourier-transform infrared spectroscopy (FTIR) is used to detect the transmittance in the wavenumber range from 400 to 1500 cm-1 of spin-coated BTO/PVDF-TrFE thin films. The piezo response force microscopy (PFM) measurement of films with different weight % and compositions is performed to identify the energy harvesting ability. It is found that the film deposited with 15% BTO in 15% PVDF-TrFE shows the best piezoelectric response. The piezoelectricity coefficient (d31) is found to be 1.29 nm/V, showing the excellent ability of polymer film to harvest vibrational energy available in the environment.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132358438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117780
Sudha Arumugam, Aarju Mathew Koshy, Faiz Ali, P. Swaminathan, M. M. Solly
Electrochromic tungsten oxide (W03) has potential applications in smart windows, switchable mirrors, display devices, and photo-electrochromic devices. The thin films of tungsten oxide with thicknesses of approximately 150 and 200 nm, measured using an optical profilometer, are prepared by reactive magnetron sputtering. The optical properties of the W03 films are characterized using ultraviolet-visible spectroscopy. A change in transmittance is also measured. A reversible color change from transparent to blue is observed during Cyclic Voltametry (CV) measurements. The coloration/bleaching reaction shows a good response in an aqueous acid electrolyte. The 150 nm film shows a better response while the 200 nm film reveals an unbalanced charge transfer indicating incomplete deintercalation of ions. These results can contribute to the development of EC based applications.
{"title":"Magnetron sputtered tungsten oxide films for electrochromic applications","authors":"Sudha Arumugam, Aarju Mathew Koshy, Faiz Ali, P. Swaminathan, M. M. Solly","doi":"10.1109/ICEE56203.2022.10117780","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117780","url":null,"abstract":"Electrochromic tungsten oxide (W03) has potential applications in smart windows, switchable mirrors, display devices, and photo-electrochromic devices. The thin films of tungsten oxide with thicknesses of approximately 150 and 200 nm, measured using an optical profilometer, are prepared by reactive magnetron sputtering. The optical properties of the W03 films are characterized using ultraviolet-visible spectroscopy. A change in transmittance is also measured. A reversible color change from transparent to blue is observed during Cyclic Voltametry (CV) measurements. The coloration/bleaching reaction shows a good response in an aqueous acid electrolyte. The 150 nm film shows a better response while the 200 nm film reveals an unbalanced charge transfer indicating incomplete deintercalation of ions. These results can contribute to the development of EC based applications.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132355738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117990
Parul Gupta, M. Imran, M. Mishra
This paper presents Monolithic Microwave Integrated circuit low noise amplifier (LNA) and single pole double throw switch (SPDT) circuits designed and fabricated with using 150 nm Gallium Nitride on SiC process of UMS, France. This MMIC LNA exhibits a noise figure of 2.5 dB with an associated gain of 25 dB in a chip area of 3.5 mm x 1.8 mm at Ku band. The designed and fabricated MMIC SPDT switch has an insertion loss less than 1.2 dB with an isolation better than 45 dB throughout the operating frequency band of 15.5 GHz - 17.5 GHz. The chip dimensions of SPDT switch is 1.5 mm X 3.5 mm. These MMICs operating at Ku-Band are suitable for integration in RF front-end chip for phased array radar applications.
本文介绍了采用法国UMS公司的SiC工艺，采用150 nm氮化镓设计制作的单片微波集成电路低噪声放大器(LNA)和单极双掷开关(SPDT)电路。该MMIC LNA在Ku波段的芯片面积为3.5 mm x 1.8 mm，噪声系数为2.5 dB，相关增益为25 dB。设计制造的MMIC SPDT开关在15.5 GHz ~ 17.5 GHz工作频段内的插入损耗小于1.2 dB，隔离度优于45 dB。SPDT开关的芯片尺寸为1.5 mm X 3.5 mm。这些工作在ku波段的mmic适合集成在相控阵雷达应用的射频前端芯片中。
{"title":"GaN HEMT based Ku band LNA and SPDT Switch for Transmit-Receive application","authors":"Parul Gupta, M. Imran, M. Mishra","doi":"10.1109/ICEE56203.2022.10117990","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117990","url":null,"abstract":"This paper presents Monolithic Microwave Integrated circuit low noise amplifier (LNA) and single pole double throw switch (SPDT) circuits designed and fabricated with using 150 nm Gallium Nitride on SiC process of UMS, France. This MMIC LNA exhibits a noise figure of 2.5 dB with an associated gain of 25 dB in a chip area of 3.5 mm x 1.8 mm at Ku band. The designed and fabricated MMIC SPDT switch has an insertion loss less than 1.2 dB with an isolation better than 45 dB throughout the operating frequency band of 15.5 GHz - 17.5 GHz. The chip dimensions of SPDT switch is 1.5 mm X 3.5 mm. These MMICs operating at Ku-Band are suitable for integration in RF front-end chip for phased array radar applications.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134145809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117695
Jeffin Shibu, Raghuram Tattamangalam Raman, Abhilash O. S., Arun Kumar, A. Ajoy
Electrostatic MEMS actuators require high operating voltages. It has been predicted that a ferroelectric negative capacitance connected in series with a MEMS actuator, forming a hybrid actuator, can reduce its operating voltage. We propose a driver circuit that mimics the behaviour of such hybrid actuators. Electrostatic actuators also suffer from pull-in instability, wherein the movable electrode snaps down to hit the bottom electrode beyond a certain applied voltage, called the pull-in voltage. Pull-in instability prohibits the use of entire air-gap for stable operation. We modify the proposed driver circuit to eliminate pull-in, resulting in full-gap travel. Using our topology, we illustrate both non-linear and linear quasi-static response for pull-in free operation. The results obtained using the numerical and circuit simulations and analytical predictions are in good agreement with each other. Thus, the proposed driver circuits can aid in the design of pull-in free electrostatic MEMS actuators.
{"title":"Ferroelectric Negative Capacitance Inspired Driver Circuits for Electrostatic MEMS Actuators","authors":"Jeffin Shibu, Raghuram Tattamangalam Raman, Abhilash O. S., Arun Kumar, A. Ajoy","doi":"10.1109/ICEE56203.2022.10117695","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117695","url":null,"abstract":"Electrostatic MEMS actuators require high operating voltages. It has been predicted that a ferroelectric negative capacitance connected in series with a MEMS actuator, forming a hybrid actuator, can reduce its operating voltage. We propose a driver circuit that mimics the behaviour of such hybrid actuators. Electrostatic actuators also suffer from pull-in instability, wherein the movable electrode snaps down to hit the bottom electrode beyond a certain applied voltage, called the pull-in voltage. Pull-in instability prohibits the use of entire air-gap for stable operation. We modify the proposed driver circuit to eliminate pull-in, resulting in full-gap travel. Using our topology, we illustrate both non-linear and linear quasi-static response for pull-in free operation. The results obtained using the numerical and circuit simulations and analytical predictions are in good agreement with each other. Thus, the proposed driver circuits can aid in the design of pull-in free electrostatic MEMS actuators.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128087172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118088
K. Kumar, D. Kaur
Herein, an N-CQDs/MoS2 (0D/2D) hybrid dimensional heterostructure based broad range (UV to NIR) photodetector has been fabricated with two-dimensional (2D) layered MoS2 and zero-dimensional (0D) N-doped Carbon quantum dots. The fabricated heterostructure offers good optical and optoelectronic properties. A significant photoresponse has been observed for the incidence of all three UV, visible and NIR radiations. The fabricated heterostructure gives responsivity of 4.31 AW-1, 26.73 AW-1, and 20.72 AW-1 at 325 nm, 532 nm, and 1064 nm wavelengths. Also, recorded external quantum efficiency (EQE) spectra support the superior photovoltaic performance of the heterostructure. Recorded response time demonstrates that the fabricated heterostructure responds fast to all three radiations. Our findings show that N-CQDs/MoS2 heterostructure has a great potential in futuristic low-cost, non-toxic, and highly efficient photovoltaic devices for next-generation broad range photodetection applications.
{"title":"A Broad Range (UV-Visible-NIR) Photodetector Based on N-Doped CQD/MoS2 (0D/2D) Quantum Dimensional Heterostructure","authors":"K. Kumar, D. Kaur","doi":"10.1109/ICEE56203.2022.10118088","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118088","url":null,"abstract":"Herein, an N-CQDs/MoS2 (0D/2D) hybrid dimensional heterostructure based broad range (UV to NIR) photodetector has been fabricated with two-dimensional (2D) layered MoS2 and zero-dimensional (0D) N-doped Carbon quantum dots. The fabricated heterostructure offers good optical and optoelectronic properties. A significant photoresponse has been observed for the incidence of all three UV, visible and NIR radiations. The fabricated heterostructure gives responsivity of 4.31 AW-1, 26.73 AW-1, and 20.72 AW-1 at 325 nm, 532 nm, and 1064 nm wavelengths. Also, recorded external quantum efficiency (EQE) spectra support the superior photovoltaic performance of the heterostructure. Recorded response time demonstrates that the fabricated heterostructure responds fast to all three radiations. Our findings show that N-CQDs/MoS2 heterostructure has a great potential in futuristic low-cost, non-toxic, and highly efficient photovoltaic devices for next-generation broad range photodetection applications.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133113687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117893
P. K. Bharti, Joycee Mekie
Radiations in space are very critical and may cause failure in the SRAM. Various state-of-the-art SRAMs, such as DICE, Quatro-10T, etc., are proposed to mitigate the failure of SRAM. However, the designs are still vulnerable to radiations causing soft errors. This work proposes a Gate Boosted Radiation Hardened Quadruple 14T SRAM with better Single Node Upset (SNU) and Double Node Upset (DNU) tolerance. It has very high read stability. On top of that, our proposed design outperforms in terms of RSNM, Read Access Time(RAT), Wordline Write Trip Voltage (WWTV), Write Access Time (WAT), and leakage power than most conventional designs. It has a maximum of 1.3x less RAT than SAR-14T, 2.63x more WWTV than Quatro-10T, 1.38× less WAT than Quatro-10T SRAM, and 1.32x less leakage power than SEA-14T SRAM respectively at VDD=0.9V, CMOS 28nm Technology.
{"title":"GBRHQ-14T: Gate-Boosted Radiation Hardened Quadruple SRAM Design","authors":"P. K. Bharti, Joycee Mekie","doi":"10.1109/ICEE56203.2022.10117893","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117893","url":null,"abstract":"Radiations in space are very critical and may cause failure in the SRAM. Various state-of-the-art SRAMs, such as DICE, Quatro-10T, etc., are proposed to mitigate the failure of SRAM. However, the designs are still vulnerable to radiations causing soft errors. This work proposes a Gate Boosted Radiation Hardened Quadruple 14T SRAM with better Single Node Upset (SNU) and Double Node Upset (DNU) tolerance. It has very high read stability. On top of that, our proposed design outperforms in terms of RSNM, Read Access Time(RAT), Wordline Write Trip Voltage (WWTV), Write Access Time (WAT), and leakage power than most conventional designs. It has a maximum of 1.3x less RAT than SAR-14T, 2.63x more WWTV than Quatro-10T, 1.38× less WAT than Quatro-10T SRAM, and 1.32x less leakage power than SEA-14T SRAM respectively at VDD=0.9V, CMOS 28nm Technology.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116631482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118029
Asish Prosad, Rabindra Biswas, S. Talabattula, V. Raghunathan
We discuss the quantum mechanical modelling of spontaneous four wave mixing (SFWM) in dispersion engineered silicon nitride waveguide and ring resonator operating in the 700–800 nm wavelength range in the presence of realistic propagation losses. The photon pair generation rates from dispersion engineered ring-resonators are found to be enhanced by at least two-orders of magnitude when compared to the straight waveguides when excited with pump on-resonance.
{"title":"Realistic Quantum Mechanical Modelling of Spontaneous Four-wave Mixing in Silicon Nitride Waveguide and Ring Resonator","authors":"Asish Prosad, Rabindra Biswas, S. Talabattula, V. Raghunathan","doi":"10.1109/ICEE56203.2022.10118029","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118029","url":null,"abstract":"We discuss the quantum mechanical modelling of spontaneous four wave mixing (SFWM) in dispersion engineered silicon nitride waveguide and ring resonator operating in the 700–800 nm wavelength range in the presence of realistic propagation losses. The photon pair generation rates from dispersion engineered ring-resonators are found to be enhanced by at least two-orders of magnitude when compared to the straight waveguides when excited with pump on-resonance.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121907210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117895
Mitali Basak, Shirsendu Mitra, D. Bandyopadhyay
Infections caused by microorganisms possess a great global public health problem which demands advanced antimicrobial strategies. Now-a-days, nano metallic 2D antibacterial materials have gained enormous interest for the development of antimicrobial biomaterials research owing to long service life and fast effective bactericidal speed. In the present work, we have utilized the active energy of graphene, and its visible band plasmonic hotspots tunability of gold nanoparticles embedded graphene along with NIR active Fe2O3 to synthesize G@GNP-Fe3O4 active sheets having bactericidal properties in a broad spectrum of VIS to NIR. The synthesized materials showed antibacterial action in visible white light, outdoor sunlight, and NIR light with no killing action in dark environment.
{"title":"Plasmonic Graphene Nanocomposite as efficient Photothermal Antibacterial Agent","authors":"Mitali Basak, Shirsendu Mitra, D. Bandyopadhyay","doi":"10.1109/ICEE56203.2022.10117895","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117895","url":null,"abstract":"Infections caused by microorganisms possess a great global public health problem which demands advanced antimicrobial strategies. Now-a-days, nano metallic 2D antibacterial materials have gained enormous interest for the development of antimicrobial biomaterials research owing to long service life and fast effective bactericidal speed. In the present work, we have utilized the active energy of graphene, and its visible band plasmonic hotspots tunability of gold nanoparticles embedded graphene along with NIR active Fe2O3 to synthesize G@GNP-Fe3O4 active sheets having bactericidal properties in a broad spectrum of VIS to NIR. The synthesized materials showed antibacterial action in visible white light, outdoor sunlight, and NIR light with no killing action in dark environment.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125710337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, the self-heating effect (SHE) is investigated in single nanosheet to stacked multi-nanosheet channels using the 3D electrothermal module of the Sentaurus TCAD simulation tool. The non-uniform lattice temperature (TL) distribution is observed in the junctionless multi-nanosheet FET. The device performance is enhanced by ~5% when the nanosheet is stacked from a single to three nanosheets, but the maximum lattice temperature (TLmax) also increases by ~66.8 K. The ON-current degradation and TLmax do not only define the device's thermal stability. Therefore, the thermal resistance is obtained by the slope of ΔTLmax and DC power curves, which reflects the low thermal resistance in the multi-nanosheet device. Furthermore, the TLmax of junctionless and inversion mode devices is compared at the same operational power. It is found ~ 100 K lower in junctionless devices due to weak lateral electric field intensity at the channel/drain interface.
{"title":"Self-Heating Effect in Sub-5nm Node Junctionless Multi-Nanosheet FET","authors":"Nitish Kumar, Kanyakumari Ashok Bhinge, Sushil Kumar, Samaresh Das, Ankur Gupta, Pushpapraj Singh","doi":"10.1109/ICEE56203.2022.10117830","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117830","url":null,"abstract":"In this paper, the self-heating effect (SHE) is investigated in single nanosheet to stacked multi-nanosheet channels using the 3D electrothermal module of the Sentaurus TCAD simulation tool. The non-uniform lattice temperature (TL) distribution is observed in the junctionless multi-nanosheet FET. The device performance is enhanced by ~5% when the nanosheet is stacked from a single to three nanosheets, but the maximum lattice temperature (TLmax) also increases by ~66.8 K. The ON-current degradation and TLmax do not only define the device's thermal stability. Therefore, the thermal resistance is obtained by the slope of ΔTLmax and DC power curves, which reflects the low thermal resistance in the multi-nanosheet device. Furthermore, the TLmax of junctionless and inversion mode devices is compared at the same operational power. It is found ~ 100 K lower in junctionless devices due to weak lateral electric field intensity at the channel/drain interface.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125967046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117871
H. B. Variar, Jhnanesh Somayaji, M. Shrivastava
This work presents the performance and re-liability (HCI, SOA and ESD) co-design insights of Ul-tra High Voltage (UHV) Laterally Diffused Metal Oxide Semiconductor (LDMOS) devices. Device design insights and performance optimization guidelines for four different types of UHV LDMOS devices (Conventional, RESURF, SOI and RESURF SOI) is systematically developed using 3D TCAD. For the first time, a step-by-step approach to design gate, drain and source field plates and its implications on the co-design of these four different UHV designs is investigated, which demonstrated significant improvement in the device breakdown without altering its ON-resistance. Finally, performance and HCI, ESD & SOA reliability benchmarking is done for the optimum designs of all four (i.e. Conventional, RESURF, SOI and RESURF SOI) UHV LDMOS architectures.
{"title":"Performance and Reliability Co-design of Ultra High Voltage LDMOS Devices","authors":"H. B. Variar, Jhnanesh Somayaji, M. Shrivastava","doi":"10.1109/ICEE56203.2022.10117871","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117871","url":null,"abstract":"This work presents the performance and re-liability (HCI, SOA and ESD) co-design insights of Ul-tra High Voltage (UHV) Laterally Diffused Metal Oxide Semiconductor (LDMOS) devices. Device design insights and performance optimization guidelines for four different types of UHV LDMOS devices (Conventional, RESURF, SOI and RESURF SOI) is systematically developed using 3D TCAD. For the first time, a step-by-step approach to design gate, drain and source field plates and its implications on the co-design of these four different UHV designs is investigated, which demonstrated significant improvement in the device breakdown without altering its ON-resistance. Finally, performance and HCI, ESD & SOA reliability benchmarking is done for the optimum designs of all four (i.e. Conventional, RESURF, SOI and RESURF SOI) UHV LDMOS architectures.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123814762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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