Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117864
Mohammad Abdul Shukoor, Tejas Shibu Bini, Nissan Kunju, Sukomal Dey
A novel multiband dual-polarized reflective polarizer is demonstrated in this article, which performs dual-operation like linear-cross and linear-circular conversions in the THz regime. The unitcell consists of a thin gold film coated modified circular rings-based Frequency Selective Surface (FSS) on top of a polyamide substrate grounded with a gold film to make the reflective design. Under normal incidence, the design performs the linear-cross conversion from 0.62-0.65 THz, 0.98-1.10 THz, and 1.74-1.80 THz, with a 90% minimum Polarization Conversion Ratio (PCR), respectively. In addition, it also demonstrates linear to circular conversion with Axial Ratio (= 3dB) from 0.58-0.59 THz, 0.69-0.90 THz, 1.18-1.67 THz, and 1.87-1.90THz. Multiple plasmonic resonances are the reason behind these conversions, which are visualized with surface current distribution analysis. The device performance is stable for Transverse Electric (TE) and Transverse Magnetic (TM) incidences up to 45°. The proposed converter's dual-polarized linear-cross and linear-circular conversion influence real-time THz applications significantly.
{"title":"Wideband Linear-Circular and Linear-Cross Angular Stable THz Reflective Polarizer with Circular Ring Based Frequency Selective Surface","authors":"Mohammad Abdul Shukoor, Tejas Shibu Bini, Nissan Kunju, Sukomal Dey","doi":"10.1109/ICEE56203.2022.10117864","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117864","url":null,"abstract":"A novel multiband dual-polarized reflective polarizer is demonstrated in this article, which performs dual-operation like linear-cross and linear-circular conversions in the THz regime. The unitcell consists of a thin gold film coated modified circular rings-based Frequency Selective Surface (FSS) on top of a polyamide substrate grounded with a gold film to make the reflective design. Under normal incidence, the design performs the linear-cross conversion from 0.62-0.65 THz, 0.98-1.10 THz, and 1.74-1.80 THz, with a 90% minimum Polarization Conversion Ratio (PCR), respectively. In addition, it also demonstrates linear to circular conversion with Axial Ratio (= 3dB) from 0.58-0.59 THz, 0.69-0.90 THz, 1.18-1.67 THz, and 1.87-1.90THz. Multiple plasmonic resonances are the reason behind these conversions, which are visualized with surface current distribution analysis. The device performance is stable for Transverse Electric (TE) and Transverse Magnetic (TM) incidences up to 45°. The proposed converter's dual-polarized linear-cross and linear-circular conversion influence real-time THz applications significantly.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121918624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118330
K. Prabakar, O. Sheela, Raghu Ramaiah M, S. T. Sundari, S. Dhara
Positive - intrinsic - Negative (PIN) photodiodes have been widely studied in recent times for detecting and measuring different types of ionizing radiations owing to their superior characteristics when compared to conventional gas-filled or scintillator based detectors. PIN diodes are also explored for detecting neutrons with a suitable converter layer (10B or 6LiF). PIN diode energy resolution is influenced by various experimental conditions and is not completely understood. In the present work, role of diode leakage current, applied reverse bias, alpha source-detector distance, diode size and gamma radiation on the PIN diode performance in terms of energy resolution (FWHM) when exposed to alpha radiation (239Pu, 241Am,244Cm) is studied. The results presented in this work will be useful while considering the PIN diodes for various radiation sensing applications.
{"title":"Alpha radiation detection using Si PIN diodes","authors":"K. Prabakar, O. Sheela, Raghu Ramaiah M, S. T. Sundari, S. Dhara","doi":"10.1109/ICEE56203.2022.10118330","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118330","url":null,"abstract":"Positive - intrinsic - Negative (PIN) photodiodes have been widely studied in recent times for detecting and measuring different types of ionizing radiations owing to their superior characteristics when compared to conventional gas-filled or scintillator based detectors. PIN diodes are also explored for detecting neutrons with a suitable converter layer (10B or 6LiF). PIN diode energy resolution is influenced by various experimental conditions and is not completely understood. In the present work, role of diode leakage current, applied reverse bias, alpha source-detector distance, diode size and gamma radiation on the PIN diode performance in terms of energy resolution (FWHM) when exposed to alpha radiation (239Pu, 241Am,244Cm) is studied. The results presented in this work will be useful while considering the PIN diodes for various radiation sensing applications.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116016635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118324
Riddhi Nandi, M. Rakowski, Avijit Chatterjee, Aneesh Dash, A. Aboketaf, Qidi Liu, Prateek Kumar Sharma
A microring-assisted Mach-Zehnder interferometer has been studied. The structure demonstrates better extinction ratio, eye opening and bandwidth than a single microring modulator. The extinction of the ring-assisted Mach-Zehnder interferometer can be further tailored by controlling the amount of light coupled to each of the interferometer arms. A 7 dB improvement in the extinction ratio over that of a standalone micro-ring device is observed for a 7.54 µm ring radius when operated in over-coupled regime at around 1310 nm wavelength.
{"title":"Study of Ring-Assisted Mach-Zehnder Interferometer Modulators","authors":"Riddhi Nandi, M. Rakowski, Avijit Chatterjee, Aneesh Dash, A. Aboketaf, Qidi Liu, Prateek Kumar Sharma","doi":"10.1109/ICEE56203.2022.10118324","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118324","url":null,"abstract":"A microring-assisted Mach-Zehnder interferometer has been studied. The structure demonstrates better extinction ratio, eye opening and bandwidth than a single microring modulator. The extinction of the ring-assisted Mach-Zehnder interferometer can be further tailored by controlling the amount of light coupled to each of the interferometer arms. A 7 dB improvement in the extinction ratio over that of a standalone micro-ring device is observed for a 7.54 µm ring radius when operated in over-coupled regime at around 1310 nm wavelength.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116197331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118295
C. Mukherjee, Nikhil Gangwar, Somil Maheshwari, S. Mukhopadhyay
Electric heating is essential for many research and industrial applications, including multi-chamber furnaces for heat treatment and plasma vacuum chambers. Heating elements, such as heating tapes, coils, etc., are conveniently used for these kinds of heating operations. Variable auto-transformers, also known as Variacs, are used to regulate the power input to these heating components because of their versatility. With the use of auto-transformers, the user can change the input voltage to the heater, which in turn changes the input current to the heaters, thus changing the input power (hence the process temperature). In many processes, a constant power input needs to be supplied to these heaters through out the operation. The user must continuously monitor the process power input and manually adjust the auto-transformer voltage as necessary. This is a tedious and error prone task. In this work the automation for supplying constant power to heating element utilizing a stepper motor controller to regulate a variable auto transformer is described in detailed. The design has the provision of setting desired power input by the user and the control system will achieve and maintain it accordingly. The system utilizes both programmable logic control and an algorithm to achieve efficient control. The design uses the ATmega328P micro-controller based Arduino UNO for control and operating purposes. The code development is done in the Arduino Integrated Development Environment (IDE). Experimental findings have confirmed the better controlling of the auto-transformer's power output. The auto-transformer controlling mechanism described in this paper is power-efficient, less expensive (in terms of components' total cost), and best suited for all resistance heaters and motors' speed control and other similar applications. Project files available at: https://github.com/Nikhil-Gangwar/SPARS
{"title":"Development of Stepper Motor-Based Programmable Autotransformer Output Power Regulating System","authors":"C. Mukherjee, Nikhil Gangwar, Somil Maheshwari, S. Mukhopadhyay","doi":"10.1109/ICEE56203.2022.10118295","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118295","url":null,"abstract":"Electric heating is essential for many research and industrial applications, including multi-chamber furnaces for heat treatment and plasma vacuum chambers. Heating elements, such as heating tapes, coils, etc., are conveniently used for these kinds of heating operations. Variable auto-transformers, also known as Variacs, are used to regulate the power input to these heating components because of their versatility. With the use of auto-transformers, the user can change the input voltage to the heater, which in turn changes the input current to the heaters, thus changing the input power (hence the process temperature). In many processes, a constant power input needs to be supplied to these heaters through out the operation. The user must continuously monitor the process power input and manually adjust the auto-transformer voltage as necessary. This is a tedious and error prone task. In this work the automation for supplying constant power to heating element utilizing a stepper motor controller to regulate a variable auto transformer is described in detailed. The design has the provision of setting desired power input by the user and the control system will achieve and maintain it accordingly. The system utilizes both programmable logic control and an algorithm to achieve efficient control. The design uses the ATmega328P micro-controller based Arduino UNO for control and operating purposes. The code development is done in the Arduino Integrated Development Environment (IDE). Experimental findings have confirmed the better controlling of the auto-transformer's power output. The auto-transformer controlling mechanism described in this paper is power-efficient, less expensive (in terms of components' total cost), and best suited for all resistance heaters and motors' speed control and other similar applications. Project files available at: https://github.com/Nikhil-Gangwar/SPARS","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122341801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118336
J. Jatin, M. Monishmurali, S. K. Gautam, M. Shrivastava
In this work, for the first time, Drain-Extended vertically stacked Nanosheet-based HV device has been studied in the context of System-On-Chip (SoC) integration. Physical insights into the device performance and ESD reliability are elaborated using 3D TCAD process simulations. Finally, the performance and reliability co-design guidelines related to HV devices in Nanosheets technology have been discussed comprehensively.
{"title":"Performance and Reliability Co-Design of HV devices in Vertically Stacked Nanosheet Technology","authors":"J. Jatin, M. Monishmurali, S. K. Gautam, M. Shrivastava","doi":"10.1109/ICEE56203.2022.10118336","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118336","url":null,"abstract":"In this work, for the first time, Drain-Extended vertically stacked Nanosheet-based HV device has been studied in the context of System-On-Chip (SoC) integration. Physical insights into the device performance and ESD reliability are elaborated using 3D TCAD process simulations. Finally, the performance and reliability co-design guidelines related to HV devices in Nanosheets technology have been discussed comprehensively.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126848555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118015
Radhika Varshney, P. N, Simranjeet Singh, T. Naik, Praveen C Ramamurthy
Cadmium (Cd), popularly used in electroplating, batteries, and paints, is a well-recognized carcinogen and a toxic non-essential element for the human body. Hence, developing an effective sensor for detecting Cd (II) from water is a critical requirement. In this work, an electrochemical sensor based on green synthesized sulphur-doped carbon nanospheres (S-CNs) modified carbon paste electrode (S-CNs/CPE) has been developed that demonstrates a limit of detection (LOD) of ~14.4 μM towards Cd (II) in water using differential pulse voltammetry (DPV) technique. Interference studies and real sample analysis reveal the effectiveness of the developed S-CNs/CPE.
{"title":"Sulphur-Doped Carbon Nanospheres Based Sensor for the Electrochemical Detection of Cadmium","authors":"Radhika Varshney, P. N, Simranjeet Singh, T. Naik, Praveen C Ramamurthy","doi":"10.1109/ICEE56203.2022.10118015","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118015","url":null,"abstract":"Cadmium (Cd), popularly used in electroplating, batteries, and paints, is a well-recognized carcinogen and a toxic non-essential element for the human body. Hence, developing an effective sensor for detecting Cd (II) from water is a critical requirement. In this work, an electrochemical sensor based on green synthesized sulphur-doped carbon nanospheres (S-CNs) modified carbon paste electrode (S-CNs/CPE) has been developed that demonstrates a limit of detection (LOD) of ~14.4 μM towards Cd (II) in water using differential pulse voltammetry (DPV) technique. Interference studies and real sample analysis reveal the effectiveness of the developed S-CNs/CPE.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"549 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126013664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117752
A. P., Y. Chauhan, Amit Verma
Vanadium dioxide (V02) has been exploited in steep subthreshold slope switches, coupled oscillators for neuromorphic computing, and selectors for RRAM due to its intrinsic insulator to metal phase transition properties. The thin-film synthesis of V02 needs a high-temperature process or long annealing duration, which increases the thermal budget and is difficult to integrate with the back-end of line CMOS technology process. In this work, we use a low thermal budget process to fabricate and characterize both horizontal and vertical V02 devices. In both configurations, V02 devices show voltage induced reversible switching beyond a threshold voltage. The threshold voltage of devices decreases monotonically as a function of decreasing channel length of the devices. The vertical device shows the lowest threshold voltage compared to the horizontal structure due to significantly smaller channel length. Finally, we demonstrate a relaxation oscillator using the fabricated V02 devices which shows stable oscillations over half a million cycles with an oscillation frequency of 1.75 kHz. We also demonstrate voltage-controlled tuning of the oscillation frequency in the range of ~1.3-2 kHz. This demonstration of V02 devices with a low-thermal budget process will be helpful for integrating V02-based phase transition devices with CMOS technology
{"title":"Experimental Demonstration of $text{VO}_{2}$ based Lateral/Vertical Devices and Relaxation Oscillator with an Ultra-low Thermal Budget Process","authors":"A. P., Y. Chauhan, Amit Verma","doi":"10.1109/ICEE56203.2022.10117752","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117752","url":null,"abstract":"Vanadium dioxide (V02) has been exploited in steep subthreshold slope switches, coupled oscillators for neuromorphic computing, and selectors for RRAM due to its intrinsic insulator to metal phase transition properties. The thin-film synthesis of V02 needs a high-temperature process or long annealing duration, which increases the thermal budget and is difficult to integrate with the back-end of line CMOS technology process. In this work, we use a low thermal budget process to fabricate and characterize both horizontal and vertical V02 devices. In both configurations, V02 devices show voltage induced reversible switching beyond a threshold voltage. The threshold voltage of devices decreases monotonically as a function of decreasing channel length of the devices. The vertical device shows the lowest threshold voltage compared to the horizontal structure due to significantly smaller channel length. Finally, we demonstrate a relaxation oscillator using the fabricated V02 devices which shows stable oscillations over half a million cycles with an oscillation frequency of 1.75 kHz. We also demonstrate voltage-controlled tuning of the oscillation frequency in the range of ~1.3-2 kHz. This demonstration of V02 devices with a low-thermal budget process will be helpful for integrating V02-based phase transition devices with CMOS technology","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127813880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118117
Debaleena Majumder, Ambarish Ghosh
The highly lossy nature of the conventional noble metals in the infrared region limits their implementation to the UV-Vis part of the electromagnetic spectrum. Hence, the necessity for a lossless alternate plasmonic material having large negative permittivity in the IR regime has paved the way for the exploration of transparent conducting oxides such as Aluminium doped Zinc Oxide. The mid-IR plasmonic response has a strong dependence on diverse tuneable parameters, the most efficient and flexible being the geometrical parameters. Detailed theoretical investigations using COMSOL Multiphysics can obliterate the requirement of complex fabrication efforts to understand the dynamic tunability of the optical signal. This study is motivated by the systematic investigation of the effect of shape factors on the linear optical properties of three different AZO based plasmonic planar nanostructures namely Nonamer, Dipole, and BowTie nanoantennas. A comparative matrix for various configuration sensitive optical modes investigated by this work provides a unique possibility to encompass the idea for exploration and design of mid-IR photodetection and sensor-based devices.
{"title":"Optical tunability of mid-IR based AZO nano geometries through the characterisation of plasmon induced resonance modes","authors":"Debaleena Majumder, Ambarish Ghosh","doi":"10.1109/ICEE56203.2022.10118117","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118117","url":null,"abstract":"The highly lossy nature of the conventional noble metals in the infrared region limits their implementation to the UV-Vis part of the electromagnetic spectrum. Hence, the necessity for a lossless alternate plasmonic material having large negative permittivity in the IR regime has paved the way for the exploration of transparent conducting oxides such as Aluminium doped Zinc Oxide. The mid-IR plasmonic response has a strong dependence on diverse tuneable parameters, the most efficient and flexible being the geometrical parameters. Detailed theoretical investigations using COMSOL Multiphysics can obliterate the requirement of complex fabrication efforts to understand the dynamic tunability of the optical signal. This study is motivated by the systematic investigation of the effect of shape factors on the linear optical properties of three different AZO based plasmonic planar nanostructures namely Nonamer, Dipole, and BowTie nanoantennas. A comparative matrix for various configuration sensitive optical modes investigated by this work provides a unique possibility to encompass the idea for exploration and design of mid-IR photodetection and sensor-based devices.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127920680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118273
Vikram Maharshi, A. Agarwal, Bhaskar Mitra
A cost-effective, flexible tactile sensor with a PDMS (polydimethylsiloxane) layer with a nanostructure pattern serving as the dielectric layer has been demonstrated. The creation of the PDMS layer with a nanostructure design uses an anodized porous alumina (APA) layer as a mold. The APA is created by electrochemically etching the aluminum material in oxalic acid. Due to the great elasticity and deformability of the nanostructures on the PDMS layer, the created tactile sensor device demonstrated remarkable sensitivity. For a pressure of 0.1 kPa, the tactile sensing device was shown to have a sensitivity of 1.1 kPa-1. The sensor can find applications in tactile sensing in low-pressure ranges (0-0.3kPa), where soft touch is desirable for non-destructive sensing.
{"title":"A Novel Technique To Realize a Flexible Tactile Sensor","authors":"Vikram Maharshi, A. Agarwal, Bhaskar Mitra","doi":"10.1109/ICEE56203.2022.10118273","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118273","url":null,"abstract":"A cost-effective, flexible tactile sensor with a PDMS (polydimethylsiloxane) layer with a nanostructure pattern serving as the dielectric layer has been demonstrated. The creation of the PDMS layer with a nanostructure design uses an anodized porous alumina (APA) layer as a mold. The APA is created by electrochemically etching the aluminum material in oxalic acid. Due to the great elasticity and deformability of the nanostructures on the PDMS layer, the created tactile sensor device demonstrated remarkable sensitivity. For a pressure of 0.1 kPa, the tactile sensing device was shown to have a sensitivity of 1.1 kPa-1. The sensor can find applications in tactile sensing in low-pressure ranges (0-0.3kPa), where soft touch is desirable for non-destructive sensing.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133721039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118050
Athul O. Asok, Mohammad Abdul Shukoor, Sukomal Dey
This work introduces a miniaturized monopole antenna based on metamaterials for breast cancer detection. The proposed antenna is designed on a low-cost FR4 substrate with a dielectric constant of 4.4, loss tangent 0.025 and thickness of 1.6 mm. For gain enhancement, the designed antenna is equipped with a frequency selective surface (FSS) on its back side. The suggested antenna obtains a broad bandwidth (S11> 10 dB) between 3.4 and 9 GHz, with a peak gain of 6.2 dBi at 5 GHz. The proposed work also achieves a maximum gain enhancement of 4.7 dBi with the addition of FSS at the back side of the antenna. The Specific absorption Rate (SAR) study of the antenna with a realistic hemispherical breast phantom modelled in the simulator is performed to assess the impact of radiation on the human breast. It is observed that the proposed antenna complies with the International limits when averaged over 10g of tissue.
{"title":"Breast Cancer Detection with Metamerial Enabled Monopole Antennas using Microwave Imaging","authors":"Athul O. Asok, Mohammad Abdul Shukoor, Sukomal Dey","doi":"10.1109/ICEE56203.2022.10118050","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118050","url":null,"abstract":"This work introduces a miniaturized monopole antenna based on metamaterials for breast cancer detection. The proposed antenna is designed on a low-cost FR4 substrate with a dielectric constant of 4.4, loss tangent 0.025 and thickness of 1.6 mm. For gain enhancement, the designed antenna is equipped with a frequency selective surface (FSS) on its back side. The suggested antenna obtains a broad bandwidth (S11> 10 dB) between 3.4 and 9 GHz, with a peak gain of 6.2 dBi at 5 GHz. The proposed work also achieves a maximum gain enhancement of 4.7 dBi with the addition of FSS at the back side of the antenna. The Specific absorption Rate (SAR) study of the antenna with a realistic hemispherical breast phantom modelled in the simulator is performed to assess the impact of radiation on the human breast. It is observed that the proposed antenna complies with the International limits when averaged over 10g of tissue.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116819454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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