Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118065
Rakesh Suthar, A. T, S. Karak
The power conversion efficiency (PCE) of organic solar cells (OSCs) has recently progressed significantly with a rapid increase from 10% to 19% due to state-of-the-art research on non-fullerene acceptor molecules and various device processing strategies. However, OSCs still exhibit significant open circuit energy loss (~0.6 eV) due to disorder and excitonic nature of the organic semiconductors. In this work, we explored the role of energetic disorder on the total energy loss of bulk heterojunction OSCs. For this purpose, different donor-acceptor combinations were used to fabricate the OSCs, and various electrical characterizations were carried out in detail. The approximation of the energetic disorder was measured in term of Urbach energy (EU) from the band tail of spectra. The correlation between open circuit energy loss due to different recombination processes and Urbach energy were observed. As EU was decreased, the energy loss decreased due to more ordered molecular packing and lower energetic disorder, resulting in better device performance. These finding show the need of reducing the energetic disorder, hence lower energy losses for boosting the PCE of the OSCs.
{"title":"Role of Energetic Disorder in Energy Loss of Bulk Heterojunction Organic Solar Cells","authors":"Rakesh Suthar, A. T, S. Karak","doi":"10.1109/ICEE56203.2022.10118065","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118065","url":null,"abstract":"The power conversion efficiency (PCE) of organic solar cells (OSCs) has recently progressed significantly with a rapid increase from 10% to 19% due to state-of-the-art research on non-fullerene acceptor molecules and various device processing strategies. However, OSCs still exhibit significant open circuit energy loss (~0.6 eV) due to disorder and excitonic nature of the organic semiconductors. In this work, we explored the role of energetic disorder on the total energy loss of bulk heterojunction OSCs. For this purpose, different donor-acceptor combinations were used to fabricate the OSCs, and various electrical characterizations were carried out in detail. The approximation of the energetic disorder was measured in term of Urbach energy (EU) from the band tail of spectra. The correlation between open circuit energy loss due to different recombination processes and Urbach energy were observed. As EU was decreased, the energy loss decreased due to more ordered molecular packing and lower energetic disorder, resulting in better device performance. These finding show the need of reducing the energetic disorder, hence lower energy losses for boosting the PCE of the OSCs.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130932273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117583
Novashree Samantaray, Karan Rane, N. Shiradkar
Even though bypass diode failures due to thermal fatigue are reported in the industry, there's no appropriate accelerated test for this in the qualification test standard for PV modules. This paper presents a low-cost power cycling-based approach and optimization of the current cycle to minimize the Time to Failure in the test. The results are promising for the development of a new accelerated test standard that would cover thermal fatigue induced failures in power bypass diodes in PV modules.
{"title":"Optimization of Power Cycling Profiles for Power Diodes to Accelerate Thermal Fatigue Induced Failures","authors":"Novashree Samantaray, Karan Rane, N. Shiradkar","doi":"10.1109/ICEE56203.2022.10117583","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117583","url":null,"abstract":"Even though bypass diode failures due to thermal fatigue are reported in the industry, there's no appropriate accelerated test for this in the qualification test standard for PV modules. This paper presents a low-cost power cycling-based approach and optimization of the current cycle to minimize the Time to Failure in the test. The results are promising for the development of a new accelerated test standard that would cover thermal fatigue induced failures in power bypass diodes in PV modules.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132830898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118340
P. Supraja, R. Gangwar, Suryasnata Tripathy, S. Vanjari, S. Singh
Alzheimer's Disease (AD) is the most common form of dementia associated with progressive loss of neuronal cells due to progressive accumulation of amyloid-beta (AB/Aβ) peptides in plaque form. Early diagnosis is the key to effective AD treatment, which can be carried out by detecting Aβ 1–40 (AB40) and Aβ 1–42 (AB42) potential biomarkers in easily accessible body fluids at sub pico gram per mL. With this aim, we have developed carboxylic functionalized multi-walled carbon nanotubes (fMWCNTs) embedded Polypyrrole (PPY) nanocomposite (PPY-fMWCNT) based highly sensitive and selective chemiresistive immunosensing platform that has the potential to detect multiple analytes simultaneously on the same substrate at sub femto gram per mL range. The binding event of antibody and antigen was transduced in terms of normalized resistance of bioelectrodes, measured through a four-probe probe station. By using PPY-fMWCNT as a bioelectrical transducer, the proposed sensing platform detected AB40 peptides (in real-time human plasma samples) in the linear detection range of 10 fg/mL to 10 ng/mL with a very low limit of detection (LoD) and a high sensitivity of 0.564 fg/mL and 55.67 ((ΔR/R0)/ng.mL-1)/cm2, respectively. The sensitivity of bare PPY (18.44 ((ΔR/R0)/ng.mL-1)/cm2) compared with fMWCNTs embedded PPY sensing platform enhanced 2.02 times without compromising in LoD. The analytical performance of the platform is further evaluated in terms of selectivity, repeatability and interference, posing its significance in the early detection of AD.
{"title":"An ultrasensitive and selective PPY-fMWCNT nanocomposite electrical-transducer based Chemiresistive immunosensing platform for early detection of Alzheimer's","authors":"P. Supraja, R. Gangwar, Suryasnata Tripathy, S. Vanjari, S. Singh","doi":"10.1109/ICEE56203.2022.10118340","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118340","url":null,"abstract":"Alzheimer's Disease (AD) is the most common form of dementia associated with progressive loss of neuronal cells due to progressive accumulation of amyloid-beta (AB/Aβ) peptides in plaque form. Early diagnosis is the key to effective AD treatment, which can be carried out by detecting Aβ 1–40 (AB40) and Aβ 1–42 (AB42) potential biomarkers in easily accessible body fluids at sub pico gram per mL. With this aim, we have developed carboxylic functionalized multi-walled carbon nanotubes (fMWCNTs) embedded Polypyrrole (PPY) nanocomposite (PPY-fMWCNT) based highly sensitive and selective chemiresistive immunosensing platform that has the potential to detect multiple analytes simultaneously on the same substrate at sub femto gram per mL range. The binding event of antibody and antigen was transduced in terms of normalized resistance of bioelectrodes, measured through a four-probe probe station. By using PPY-fMWCNT as a bioelectrical transducer, the proposed sensing platform detected AB40 peptides (in real-time human plasma samples) in the linear detection range of 10 fg/mL to 10 ng/mL with a very low limit of detection (LoD) and a high sensitivity of 0.564 fg/mL and 55.67 ((ΔR/R0)/ng.mL-1)/cm2, respectively. The sensitivity of bare PPY (18.44 ((ΔR/R0)/ng.mL-1)/cm2) compared with fMWCNTs embedded PPY sensing platform enhanced 2.02 times without compromising in LoD. The analytical performance of the platform is further evaluated in terms of selectivity, repeatability and interference, posing its significance in the early detection of AD.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126584698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117646
Vishal Khandelwal, S. Yuvaraja, Chuanju Wang, Dhanu Chettri, Xiaohang Li
A systematic study of Al2O3 and SiO2/ Al2O3 dielectric on p-Ga2O3 is carried out including the effect of the forming gas annealing. Capacitance-voltage (C-V) curve of the Al2O3/Ga2O3 gate stack shows a large hysteresis and sweep-to-sweep C-V shift compared to SiO2/Al2O3/Ga2O3 case, which suggests SiO2 interlayer reduces the defect density in Al2O3/Ga2O3 gate stack. In addition, forming gas annealing further suppresses the interface and border traps density in both Al2O3/Ga2O3 and SiO2/ Al2O3/Ga2O3 gate stacks. A thin film transistor (TFT) with annealed SiO2/ Al2O3 dielectric has an on-off ratio of ~106, a subthreshold swing (SS) of ~ 0.75 V/decade, and a hysteresis width $(mathrm{V}_{text{Hy}})$ of~ 0.5 V compared to an on-off ratio of~105, a SS of ~1.2 V/decade, and a VHy of ~2 V in the controlled TFT with unannealed Al2O3 dielectric. The increased on-off ratio by one order, reduced SS by > 400 mV/decade, and $mathrm{V}_{text{Hy}}$ by >1.5 V is attributed to decreased interface and border traps in annealed SiO2/ Al2O3 compared to unannealed Al2O3/Ga2O3 gate stack. Interface trap density is calculated by $mathbf{V}_{text{Hy}}$ of the transistor, which showed a five-time reduction in annealed SiO2/ Al2O3/Ga2O3 compared to the unannealed A;2O3/Ga2O3 gate stack. This study suggests that annealed SiO2/ Al2O3 dielectric stack is promising for $boldsymbol{upbeta}-text{Ga}_2 mathrm{O}_3$ transistors.
{"title":"Gate Stack Engineering in n-type (−201) $upbeta-text{Ga}_{2}mathrm{O}_{3}$ Transistors","authors":"Vishal Khandelwal, S. Yuvaraja, Chuanju Wang, Dhanu Chettri, Xiaohang Li","doi":"10.1109/ICEE56203.2022.10117646","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117646","url":null,"abstract":"A systematic study of Al<inf>2</inf>O<inf>3</inf> and SiO<inf>2</inf>/ Al<inf>2</inf>O<inf>3</inf> dielectric on p-Ga2O3 is carried out including the effect of the forming gas annealing. Capacitance-voltage (C-V) curve of the Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf> gate stack shows a large hysteresis and sweep-to-sweep C-V shift compared to SiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf> case, which suggests SiO2 interlayer reduces the defect density in Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf> gate stack. In addition, forming gas annealing further suppresses the interface and border traps density in both Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf> and SiO<inf>2</inf>/ Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf> gate stacks. A thin film transistor (TFT) with annealed SiO<inf>2</inf>/ Al<inf>2</inf>O<inf>3</inf> dielectric has an on-off ratio of ~106, a subthreshold swing (SS) of ~ 0.75 V/decade, and a hysteresis width <tex>$(mathrm{V}_{text{Hy}})$</tex> of~ 0.5 V compared to an on-off ratio of~105, a SS of ~1.2 V/decade, and a VHy of ~2 V in the controlled TFT with unannealed Al<inf>2</inf>O<inf>3</inf> dielectric. The increased on-off ratio by one order, reduced SS by > 400 mV/decade, and <tex>$mathrm{V}_{text{Hy}}$</tex> by >1.5 V is attributed to decreased interface and border traps in annealed SiO<inf>2</inf>/ Al<inf>2</inf>O<inf>3</inf> compared to unannealed Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf> gate stack. Interface trap density is calculated by <tex>$mathbf{V}_{text{Hy}}$</tex> of the transistor, which showed a five-time reduction in annealed SiO<inf>2</inf>/ Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf> compared to the unannealed A;2O3/Ga<inf>2</inf>O<inf>3</inf> gate stack. This study suggests that annealed SiO<inf>2</inf>/ Al<inf>2</inf>O<inf>3</inf> dielectric stack is promising for <tex>$boldsymbol{upbeta}-text{Ga}_2 mathrm{O}_3$</tex> transistors.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131676515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118233
Manvendra Singh, J. R. Pradhan, S. Dasgupta
From the beginning of this century, printed electronics (PE) has attracted large research as well as commercial interest. A large variety of functional devices belong to the PE umbrella, starting from conducting inks, sensors, energy storage and conversion devices, lighting, and of course logic and memory electronics. Here, it is important to note that for fully print electronic circuits, all the basic building blocks, such as, TFTs, memories, capacitors, and diodes must be fabricated by solution process/printing techniques with sufficient performance, reliability and lifetime. However, while printed TFTs have attracted the majority of attention, the other circuit components have largely been under-represented. In this regard, here we demonstrate ink-jet printed Ag/a-IGZO/ITO Schottky diodes with rectification ratio more than 10^6 for low voltage and low frequency applications. In this study, we show that the diodes can be operated at as low as 1 V, till 3 kHz operation frequency and can carry substantially large current density of 45 A [(cm)] ^(-2).
从本世纪初开始，印刷电子(PE)吸引了大量的研究和商业兴趣。各种各样的功能器件都属于PE保护伞，从导电油墨，传感器，能量存储和转换器件，照明，当然还有逻辑和存储电子产品。在这里，重要的是要注意，对于完全印刷的电子电路，所有的基本构建块，如tft，存储器，电容器和二极管必须通过溶液工艺/印刷技术制造，具有足够的性能，可靠性和寿命。然而，虽然印刷tft吸引了大多数人的关注，但其他电路元件在很大程度上没有得到充分的代表。在这方面，我们展示了喷墨印刷Ag/a-IGZO/ITO肖特基二极管，整流比超过10^6，适用于低压和低频应用。在这项研究中，我们证明了二极管可以在低至1 V的工作频率下工作，直到3 kHz的工作频率，并且可以携带45 A [(cm)] ^(-2)的大电流密度。
{"title":"Inkjet-printed a-IGZO/Ag Schottky diodes with> 10^6 rectification ratio","authors":"Manvendra Singh, J. R. Pradhan, S. Dasgupta","doi":"10.1109/ICEE56203.2022.10118233","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118233","url":null,"abstract":"From the beginning of this century, printed electronics (PE) has attracted large research as well as commercial interest. A large variety of functional devices belong to the PE umbrella, starting from conducting inks, sensors, energy storage and conversion devices, lighting, and of course logic and memory electronics. Here, it is important to note that for fully print electronic circuits, all the basic building blocks, such as, TFTs, memories, capacitors, and diodes must be fabricated by solution process/printing techniques with sufficient performance, reliability and lifetime. However, while printed TFTs have attracted the majority of attention, the other circuit components have largely been under-represented. In this regard, here we demonstrate ink-jet printed Ag/a-IGZO/ITO Schottky diodes with rectification ratio more than 10^6 for low voltage and low frequency applications. In this study, we show that the diodes can be operated at as low as 1 V, till 3 kHz operation frequency and can carry substantially large current density of 45 A [(cm)] ^(-2).","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115644327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117674
V. Mere, Forrest Valdez, S. Mookherjea
A process for designing and fabricating hybrid lithium niobate Mach-Zehnder electro-optic modulators is described. The design uses unetched thin-film lithium niobate bonded to a foundry-fabricated chip containing planarized silicon nitride waveguides. We demonstrate 3-dB electro-optic bandwidth greater than 110 GHz and $mathrm{V}pi mathrm{L}$ of 2.4 V.cm, at 1310 nm wavelength.
{"title":"Design and Fabrication of Hybrid Lithium Niobate Electro-Optic Modulators","authors":"V. Mere, Forrest Valdez, S. Mookherjea","doi":"10.1109/ICEE56203.2022.10117674","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117674","url":null,"abstract":"A process for designing and fabricating hybrid lithium niobate Mach-Zehnder electro-optic modulators is described. The design uses unetched thin-film lithium niobate bonded to a foundry-fabricated chip containing planarized silicon nitride waveguides. We demonstrate 3-dB electro-optic bandwidth greater than 110 GHz and $mathrm{V}pi mathrm{L}$ of 2.4 V.cm, at 1310 nm wavelength.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115999224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/icee56203.2022.10117933
Sabyasachi Tiwari, M. L. Van de Put, B. Sorée, W. Vandenberghe
We present a first-principle based computational framework to model low-dimensional magnetic materials and their magnetization dynamics. We apply our method first on well-known 2D magnetic materials such as CrI3 and CrBr3. Next, we apply our method on transition metal doped 2D transition-metal dichalcogenides (TMDs). Finally, as an example of our device modelling methodology, we model a magnetic memory device using an interface between a 2D topological insulator and a 2D FM and show that a very fast switching of magnetic domain is possible in such devices (a fast write operation).
{"title":"Ab-initio modeling of magneto-electronic devices","authors":"Sabyasachi Tiwari, M. L. Van de Put, B. Sorée, W. Vandenberghe","doi":"10.1109/icee56203.2022.10117933","DOIUrl":"https://doi.org/10.1109/icee56203.2022.10117933","url":null,"abstract":"We present a first-principle based computational framework to model low-dimensional magnetic materials and their magnetization dynamics. We apply our method first on well-known 2D magnetic materials such as CrI3 and CrBr3. Next, we apply our method on transition metal doped 2D transition-metal dichalcogenides (TMDs). Finally, as an example of our device modelling methodology, we model a magnetic memory device using an interface between a 2D topological insulator and a 2D FM and show that a very fast switching of magnetic domain is possible in such devices (a fast write operation).","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123604882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118332
P. Suri, Preeti Deshpande, Ambarish Ghosh
Plasmonic nanostructures have been engineered and investigated for their ability to confine light to sub-nm gaps and increase absorption[1]. The heat generated upon optical illumination of these nanostructures has been utilized in various applications ranging from biomedical technology to optoelectronics [2–5]. Here we computationally quantify the heat generated by one such sub-nm spaced plasmonic dimer geometry with monolayer Mos2 sandwiched in between. Such structures can be used for on demand material phase transformation and other optoelectronic applications[7]. This rise in local temperature confined to few nanometers has potential to be used as optically controlled nano heaters for heat assisted storage and patterning.
{"title":"Estimation of temperature rise in an atomically separated plasmonic dimer under resonant optical illumination","authors":"P. Suri, Preeti Deshpande, Ambarish Ghosh","doi":"10.1109/ICEE56203.2022.10118332","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118332","url":null,"abstract":"Plasmonic nanostructures have been engineered and investigated for their ability to confine light to sub-nm gaps and increase absorption[1]. The heat generated upon optical illumination of these nanostructures has been utilized in various applications ranging from biomedical technology to optoelectronics [2–5]. Here we computationally quantify the heat generated by one such sub-nm spaced plasmonic dimer geometry with monolayer Mos2 sandwiched in between. Such structures can be used for on demand material phase transformation and other optoelectronic applications[7]. This rise in local temperature confined to few nanometers has potential to be used as optically controlled nano heaters for heat assisted storage and patterning.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122100558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118203
H. B. Variar, Jhnanesh Somayaji, M. Shrivastava
Field plates are commonly used to extend the breakdown voltage to achieve high voltage devices. But, the role of field plates in the ESD behaviour of these devices is still not addressed. This work provides physical insights into the ESD behaviour of field plated Ultra High Voltage Laterally Diffused Metal Oxide Semiconductor (UHV LDMOS) devices. UHV devices are simulated and compared using 3D TCAD simulations. For the first time, the role of field plates in ESD design aspects is investigated. This paper highlights the importance of each field plate (Gate Field plate (GFp), Source Field plate (SFp) and Drain Field plate (DFp)), exploring their individual roles. It was found that GFp and SFp play a significant role in improving the trigger voltage and holding voltage, while DFp is the sole reason for enhancing the failure threshold. Finally, a 3D device failure study is performed to support the theory drawn from 2D simulations.
{"title":"Physical Insights Into the ESD Behavior of Field Plated UHV LDMOS Devices","authors":"H. B. Variar, Jhnanesh Somayaji, M. Shrivastava","doi":"10.1109/ICEE56203.2022.10118203","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118203","url":null,"abstract":"Field plates are commonly used to extend the breakdown voltage to achieve high voltage devices. But, the role of field plates in the ESD behaviour of these devices is still not addressed. This work provides physical insights into the ESD behaviour of field plated Ultra High Voltage Laterally Diffused Metal Oxide Semiconductor (UHV LDMOS) devices. UHV devices are simulated and compared using 3D TCAD simulations. For the first time, the role of field plates in ESD design aspects is investigated. This paper highlights the importance of each field plate (Gate Field plate (GFp), Source Field plate (SFp) and Drain Field plate (DFp)), exploring their individual roles. It was found that GFp and SFp play a significant role in improving the trigger voltage and holding voltage, while DFp is the sole reason for enhancing the failure threshold. Finally, a 3D device failure study is performed to support the theory drawn from 2D simulations.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124428712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117931
Sandeep Sharma Kongbrailatpam, J. P. Goud, K. Raju, Gayathri Pillai
This paper reports the study and characterization of a high overtone bulk acoustic resonator (HBAR) with varying dc bias voltages applied and with measurements performed at various temperature points. Important parameters of the resonators such as the effective coupling coefficient and quality factors are studied for the multiple resonant modes appearing in the frequency spectra with relation to effects from both temperature and dc bias applied. It is observed that the resonant modes intensity (S11, dB) and its distribution varies with different bias voltages as well as upon the polarity of the bias applied. Both the effective coupling coefficient and the quality factor (Q) of the modes are heavily influenced by the temperature at which the resonator operated. The transition temperature of the ferroelectric thin film Ba0.5Sr0.5TiO3 (BST) used as the transducer is also observed from the distribution of the coupling coefficient and quality factor with temperature. From the study of three different resonant modes (0.94 GHz, 1.52 GHz and 2.56 GHz), it is observed that the frequency quality factor product (fQ) has an inverse proportionality with temperature wherein with decrease in temperature, the recorded fQ increases. The dependence of fQ on temperature also increases with increase in frequency of the mode considered.
{"title":"Low Temperature and DC Bias Dependence Study of Barium Strontium Titanate Based High Overtone Bulk Acoustic Resonator (HBAR)","authors":"Sandeep Sharma Kongbrailatpam, J. P. Goud, K. Raju, Gayathri Pillai","doi":"10.1109/ICEE56203.2022.10117931","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117931","url":null,"abstract":"This paper reports the study and characterization of a high overtone bulk acoustic resonator (HBAR) with varying dc bias voltages applied and with measurements performed at various temperature points. Important parameters of the resonators such as the effective coupling coefficient and quality factors are studied for the multiple resonant modes appearing in the frequency spectra with relation to effects from both temperature and dc bias applied. It is observed that the resonant modes intensity (S11, dB) and its distribution varies with different bias voltages as well as upon the polarity of the bias applied. Both the effective coupling coefficient and the quality factor (Q) of the modes are heavily influenced by the temperature at which the resonator operated. The transition temperature of the ferroelectric thin film Ba0.5Sr0.5TiO3 (BST) used as the transducer is also observed from the distribution of the coupling coefficient and quality factor with temperature. From the study of three different resonant modes (0.94 GHz, 1.52 GHz and 2.56 GHz), it is observed that the frequency quality factor product (fQ) has an inverse proportionality with temperature wherein with decrease in temperature, the recorded fQ increases. The dependence of fQ on temperature also increases with increase in frequency of the mode considered.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129525849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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