Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117687
Kamalesh Tripathy, K. Habib, M. Bhattacharjee, Dayarnab Baidya
Microheater is an integral part of gas/vapor sensing systems. Here, a set of microheater structures on a PET substrate of 10 mm x 10 mm x 0.2 mm dimension are studied for flexible gas sensing applications. Three different geometrical structures such as double meander (DM), double meander with a perpendicular electrode (DMPE), and N-shaped (NS) heating circuit have been designed and electro-thermal analysis has been performed. The temperature distribution over the microheater shows NS has the highest uniformity over the other two structures, which is 74.70% over DMPE (least uniform). The dimension and shape of the structure are considered based on integration feasibility with gas sensor arrays. It is found that NS has the lowest power consumption (44.37 mW) among others, which is 34.02% lower than DM (highest power consumption). Hence, NS is the best structure both in terms of temperature uniformity and power consumption. The study of the heaters can bring insight to improve the performance of gas sensing arrays in the flexible domain.
微加热器是气体/蒸汽传感系统的一个组成部分。本文研究了一套尺寸为10mm x 10mm x 0.2 mm的PET基板微加热器结构，用于柔性气敏应用。设计了双曲径(DM)、双曲径带垂直电极(DMPE)和n形(NS)加热电路三种不同的几何结构，并进行了电热分析。在微加热器上的温度分布表明，NS比DMPE均匀度最高，为74.70%(均匀度最低)。基于与气体传感器阵列集成的可行性，考虑了结构的尺寸和形状。其中，NS的功耗最低(44.37 mW)，比DM(最高功耗)低34.02%。因此，在温度均匀性和功耗方面，NS是最好的结构。该加热器的研究对提高柔性领域气敏阵列的性能具有重要意义。
{"title":"Microheater Structures to Achieve Uniform Temperature Distribution for Flexible Gas Sensing Application","authors":"Kamalesh Tripathy, K. Habib, M. Bhattacharjee, Dayarnab Baidya","doi":"10.1109/ICEE56203.2022.10117687","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117687","url":null,"abstract":"Microheater is an integral part of gas/vapor sensing systems. Here, a set of microheater structures on a PET substrate of 10 mm x 10 mm x 0.2 mm dimension are studied for flexible gas sensing applications. Three different geometrical structures such as double meander (DM), double meander with a perpendicular electrode (DMPE), and N-shaped (NS) heating circuit have been designed and electro-thermal analysis has been performed. The temperature distribution over the microheater shows NS has the highest uniformity over the other two structures, which is 74.70% over DMPE (least uniform). The dimension and shape of the structure are considered based on integration feasibility with gas sensor arrays. It is found that NS has the lowest power consumption (44.37 mW) among others, which is 34.02% lower than DM (highest power consumption). Hence, NS is the best structure both in terms of temperature uniformity and power consumption. The study of the heaters can bring insight to improve the performance of gas sensing arrays in the flexible domain.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126029660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118322
Saurav Roy, A. Bhattacharyya, Carl Peterson, S. Krishnamoorthy
We demonstrate lateral β-Ga2O3 Schottky barrier diode (SBD) with a high permittivity (high-k) dielectric superjunction (SJ) structure. Extreme permittivity dielectric (BaTiO3) with dielectric constant of 220 is used to uniformly distribute the electric field in a MOVPE-grown lateral drift layer, which circumvents the extreme difficulties in achieving charge balance using conventional p-n superjunction structures in β-Ga2O3 due to the lack of shallow acceptors. SBD on an epilayer with a sheet charge of 1.5×1013 cm2demonstrates a specific on resistance (Ron-sp) of 0.83 mΩ-cm-2and a breakdown voltage VBR of 1487 V for an anode to cathode length of 5 microns, rendering a Power figure of Merit (PFOM) of 2.7 GW/cm-2 when normalized to the active current conducting area. These results using the proposed device structure demonstrates the promise of β-Ga2O3-based devices in multi-kilovolt class applications.
{"title":"β-Ga2O3Dielectric Superjunction Schottky Barrier Diode Exceeding SiC Unipolar Figure of Merit: A Novel Approach to Realizing Superjunction Devices Without p-type Doping","authors":"Saurav Roy, A. Bhattacharyya, Carl Peterson, S. Krishnamoorthy","doi":"10.1109/ICEE56203.2022.10118322","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118322","url":null,"abstract":"We demonstrate lateral β-Ga<inf>2</inf>O<inf>3</inf> Schottky barrier diode (SBD) with a high permittivity (high-k) dielectric superjunction (SJ) structure. Extreme permittivity dielectric (BaTiO<inf>3</inf>) with dielectric constant of 220 is used to uniformly distribute the electric field in a MOVPE-grown lateral drift layer, which circumvents the extreme difficulties in achieving charge balance using conventional p-n superjunction structures in β-Ga<inf>2</inf>O<inf>3</inf> due to the lack of shallow acceptors. SBD on an epilayer with a sheet charge of 1.5×10<sup>13</sup> cm<sup>2</sup>demonstrates a specific on resistance (Ron-sp) of 0.83 mΩ-cm<sup>-2</sup>and a breakdown voltage V<inf>BR</inf> of 1487 V for an anode to cathode length of 5 microns, rendering a Power figure of Merit (PFOM) of 2.7 GW/cm-<sup>2</sup> when normalized to the active current conducting area. These results using the proposed device structure demonstrates the promise of β-Ga<inf>2</inf>O<inf>3</inf>-based devices in multi-kilovolt class applications.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120967176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117786
S. Yuvaraja, Vishal Khandelwal, S. Krishna, Yi Lu, Zhiyuan Liu, Mritunjay Kumar, Dhanu Chettri, Xiao Tang, Glen Issac Maciel Garcia, Che-Hao Liao, Xiaohang Li
In this paper we demonstrated the UWBG Ga2O3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (105) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm2/V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.
{"title":"Demonstration of Ga2O3 trigate transistors on (100) silicon substrates","authors":"S. Yuvaraja, Vishal Khandelwal, S. Krishna, Yi Lu, Zhiyuan Liu, Mritunjay Kumar, Dhanu Chettri, Xiao Tang, Glen Issac Maciel Garcia, Che-Hao Liao, Xiaohang Li","doi":"10.1109/ICEE56203.2022.10117786","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117786","url":null,"abstract":"In this paper we demonstrated the UWBG Ga2O3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (105) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm2/V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122595385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117867
Goutam Prakash, Vasanth Kumar, Sabiha Sultana
In this work, we present a discussion on an efficient and economical ‘Double Exposure’ (dual exposure or multiple exposures) method to achieve lithographic pattern alignments on opposite sides of various substrates (Silicon, GaN, GaAs, SiN) using Direct Writing tools and a single (standard) alignment marker photo mask. By exposing and developing the same photoresist (PR) multiple times, while using the corresponding lithographic tools in concert, the efficiency can be significantly improved while drastically reducing the resource cost with no compromise in the final resolution. The process has been optimized and demonstrated for repeatability in the lithography step followed by both etching and/or deposition (lift-off) processes. The proposed process is especially beneficial in the Backside Alignment (BSA) of Single- Side Polished (SSP) Silicon wafers. This has also been proven for BSA applications in full-fledged process flows for MEMS/NEMS and Heterogeneously-Integrated Devices.
{"title":"A simple and cost-effective dual side lithography alignment process using a combination of a single mask and direct writing Double Exposure process","authors":"Goutam Prakash, Vasanth Kumar, Sabiha Sultana","doi":"10.1109/ICEE56203.2022.10117867","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117867","url":null,"abstract":"In this work, we present a discussion on an efficient and economical ‘Double Exposure’ (dual exposure or multiple exposures) method to achieve lithographic pattern alignments on opposite sides of various substrates (Silicon, GaN, GaAs, SiN) using Direct Writing tools and a single (standard) alignment marker photo mask. By exposing and developing the same photoresist (PR) multiple times, while using the corresponding lithographic tools in concert, the efficiency can be significantly improved while drastically reducing the resource cost with no compromise in the final resolution. The process has been optimized and demonstrated for repeatability in the lithography step followed by both etching and/or deposition (lift-off) processes. The proposed process is especially beneficial in the Backside Alignment (BSA) of Single- Side Polished (SSP) Silicon wafers. This has also been proven for BSA applications in full-fledged process flows for MEMS/NEMS and Heterogeneously-Integrated Devices.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127821136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118333
Shreyasi Das, A. Ghorai, Sourabh Pal, S. Mahato, Soumen K. Das, S. Ray
A promising device architecture that can achieve high response in photodetector devices can be consists of an effective semiconductor layer with high carrier mobility and highly photoabsorbing material. Here, we report a superior broadband visible photodetector with a few-layer tungsten disulfide (WS2) decorated with cesium lead iodide (CsPbI3) nano-crystals (NCs) in hybrid heterojunctions. An enhancement in photocurrent is demonstrated in the CsPbI3 NCs decorated WS2 0D/2D hybrid nanostructure compared to pristine WS2, revealing the potential of hybrid systems in next generation optoelectronic devices.
{"title":"High Performance CsPbI3 NCs Decorated Few-layer WS2 Hybrid Photodetectors","authors":"Shreyasi Das, A. Ghorai, Sourabh Pal, S. Mahato, Soumen K. Das, S. Ray","doi":"10.1109/ICEE56203.2022.10118333","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118333","url":null,"abstract":"A promising device architecture that can achieve high response in photodetector devices can be consists of an effective semiconductor layer with high carrier mobility and highly photoabsorbing material. Here, we report a superior broadband visible photodetector with a few-layer tungsten disulfide (WS2) decorated with cesium lead iodide (CsPbI3) nano-crystals (NCs) in hybrid heterojunctions. An enhancement in photocurrent is demonstrated in the CsPbI3 NCs decorated WS2 0D/2D hybrid nanostructure compared to pristine WS2, revealing the potential of hybrid systems in next generation optoelectronic devices.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128125328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117961
S. Puttur, S. Dutta
Solution-processed polymer-based organic thin-film transistors (OTFT) have been used in various applications over the past decade due to the advantages of low-temperature processing, inexpensive technology abundant dielectric and semi-conductors materials, and their processing compatibility with flexible substrates. In this work comparision of OTFT fabricated on the flexible and rigid substrate is accomplished using cross-linked poly(4-vinyl phenol) (c-PVP) as polymer gate dielectric and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-c14) as polymer semiconductor. The dielectric cross-linking is accomplished at comparatively much lower temperatures to achieve solution processing on the flexible polyethylene terephthalate (PET) substrate. The spice Level-1 model parameters for the OTFTs on glass and flexible substrates are extracted from DC characteristics. Finally the DC characteristics are simulated using LTspice simulator incorporating the extracted parameters. The extracted model parameter of OTFT can be used for circuit design and applications.
{"title":"Strategy from the Fabrication of Polymer Thin Film Transistor on Rigid and Flexible Substrate to LTspice Simulation Towards Circuit Applications","authors":"S. Puttur, S. Dutta","doi":"10.1109/ICEE56203.2022.10117961","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117961","url":null,"abstract":"Solution-processed polymer-based organic thin-film transistors (OTFT) have been used in various applications over the past decade due to the advantages of low-temperature processing, inexpensive technology abundant dielectric and semi-conductors materials, and their processing compatibility with flexible substrates. In this work comparision of OTFT fabricated on the flexible and rigid substrate is accomplished using cross-linked poly(4-vinyl phenol) (c-PVP) as polymer gate dielectric and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-c14) as polymer semiconductor. The dielectric cross-linking is accomplished at comparatively much lower temperatures to achieve solution processing on the flexible polyethylene terephthalate (PET) substrate. The spice Level-1 model parameters for the OTFTs on glass and flexible substrates are extracted from DC characteristics. Finally the DC characteristics are simulated using LTspice simulator incorporating the extracted parameters. The extracted model parameter of OTFT can be used for circuit design and applications.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132636583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118198
M. Sharma, Rajendra Singh
Here we fabricated a flexible MoS2 photodetector onto a transparent, ultrathin cellulose acetate substrate using a quasi-dry layer transfer process. The device showed the broadband photoresponse from ultraviolet to visible region. The maximum responsivity and detectivity of the MoS2/CA photodetector were found to be 9.1 mA/W and 2.82 × 1011 Jones, respectively. Additionally, the performance of the device was investigated with bending or strain, and it was shown that photocurrent is consistent with bending.
{"title":"Wearable Mos2 Photodetector based on Quasi-Dry Layer Transfer Process","authors":"M. Sharma, Rajendra Singh","doi":"10.1109/ICEE56203.2022.10118198","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118198","url":null,"abstract":"Here we fabricated a flexible MoS2 photodetector onto a transparent, ultrathin cellulose acetate substrate using a quasi-dry layer transfer process. The device showed the broadband photoresponse from ultraviolet to visible region. The maximum responsivity and detectivity of the MoS2/CA photodetector were found to be 9.1 mA/W and 2.82 × 1011 Jones, respectively. Additionally, the performance of the device was investigated with bending or strain, and it was shown that photocurrent is consistent with bending.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133312312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117675
Sudarshan Singh, Arijit Sarkar, Ila Ashok, S. Ray
This study deals with the fabrication of germanium (Ge) micropillars (MPs) followed by their development into novel Ge-MPs/Cu2ZnSnS4 (CZTS) heterojunction-based photodetectors. Vertically oriented and uniform Ge MPs templates were fabricated using facile and cost-effective wet-chemical etching techniques at the wafer scale. The CZTS thin films were deposited by pulsed laser deposition technique on MPs to obtain Ge MPs/CZTS heterostructures. Scanning electron microscopy and atomic force microscopy have been carried out to study the morphologies of the as-grown conical-shaped Ge MPs and their heterostructure with CZTS. The fabricated Ge MPs/CZTS heterostructure was then developed into a self-powered photodetector exhibiting broadband photodetection characteristics covering a wavelength range from visible-near infrared to short wave infrared (Vis-NIR-SWIR) region.
{"title":"Self-Powered, Broadband (400–1800 Nm), Highly Responsive Photodetectors Based on Germanium Micropillars/Cu2-ZnSnS4 Heterojunctions","authors":"Sudarshan Singh, Arijit Sarkar, Ila Ashok, S. Ray","doi":"10.1109/ICEE56203.2022.10117675","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117675","url":null,"abstract":"This study deals with the fabrication of germanium (Ge) micropillars (MPs) followed by their development into novel Ge-MPs/Cu2ZnSnS4 (CZTS) heterojunction-based photodetectors. Vertically oriented and uniform Ge MPs templates were fabricated using facile and cost-effective wet-chemical etching techniques at the wafer scale. The CZTS thin films were deposited by pulsed laser deposition technique on MPs to obtain Ge MPs/CZTS heterostructures. Scanning electron microscopy and atomic force microscopy have been carried out to study the morphologies of the as-grown conical-shaped Ge MPs and their heterostructure with CZTS. The fabricated Ge MPs/CZTS heterostructure was then developed into a self-powered photodetector exhibiting broadband photodetection characteristics covering a wavelength range from visible-near infrared to short wave infrared (Vis-NIR-SWIR) region.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"11 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131872214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118193
Sandip Ghosh, Shon Yadav, A. Chakravorty
A physics-based model is proposed to accurately capture the lateral non-quasi-static (LNQS) effects in SiGe HBTs. The model uses new methodology to implement the internal base impedance of the device using two-RC circuits. Equations of all base impedance related components associated with the two-RC network are derived. The proposed model is implemented in Verilog-A. The small-signal AC and the large-signal transient simulations show that the two-RC model yields significantly more accurate results when compared with those of the state-of-the-art model and the π-model.
{"title":"Compact 2-RC Model for Lateral NQS Effects in SiGe HBTs","authors":"Sandip Ghosh, Shon Yadav, A. Chakravorty","doi":"10.1109/ICEE56203.2022.10118193","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118193","url":null,"abstract":"A physics-based model is proposed to accurately capture the lateral non-quasi-static (LNQS) effects in SiGe HBTs. The model uses new methodology to implement the internal base impedance of the device using two-RC circuits. Equations of all base impedance related components associated with the two-RC network are derived. The proposed model is implemented in Verilog-A. The small-signal AC and the large-signal transient simulations show that the two-RC model yields significantly more accurate results when compared with those of the state-of-the-art model and the π-model.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134410512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117645
Bhumika Sharma, V. Pawar, S. Patil, S. Avasthi
Ionic liquids have recently gained attention in the field of perovskite solar cells because of the enhanced efficiency and stability that they offer. Here, we study the effect of ionic liquid on both 3D, MAPbI3 and 2D-3D, PEA2MA4Pb5I16 lead based perovskite solar cells. A comparative analysis has been done to observe the enhancement in performance with and without the usage of ionic liquids. The material characterizations clearly show that an interlayer of ionic liquid causes no change in the morphology as well as the phase formation of the desired perovskite. Looking at the cell performance, we can observe a significant increase in the efficiency from 7.89 percent to 10.35 percent in the case when MAPbI3 was used as an absorber layer without and with an interlayer of ionic liquid 1 Butyl 3 methylimidazolium tetrafluoroborate respectively. Further, when PEA2MA4Pb5I16 was used as an absorber layer, the efficiencies were recorded to be 6.15 percent and 8.6 percent for the devices without and with an ionic liquid interlayer. The results show that ionic liquid can enhance the device performance for 2D-3D lead-halide perovskite solar cells.
{"title":"Effect of Ionic liquids on 2D-3D Lead-based Perovskite Solar Cells","authors":"Bhumika Sharma, V. Pawar, S. Patil, S. Avasthi","doi":"10.1109/ICEE56203.2022.10117645","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117645","url":null,"abstract":"Ionic liquids have recently gained attention in the field of perovskite solar cells because of the enhanced efficiency and stability that they offer. Here, we study the effect of ionic liquid on both 3D, MAPbI3 and 2D-3D, PEA2MA4Pb5I16 lead based perovskite solar cells. A comparative analysis has been done to observe the enhancement in performance with and without the usage of ionic liquids. The material characterizations clearly show that an interlayer of ionic liquid causes no change in the morphology as well as the phase formation of the desired perovskite. Looking at the cell performance, we can observe a significant increase in the efficiency from 7.89 percent to 10.35 percent in the case when MAPbI3 was used as an absorber layer without and with an interlayer of ionic liquid 1 Butyl 3 methylimidazolium tetrafluoroborate respectively. Further, when PEA2MA4Pb5I16 was used as an absorber layer, the efficiencies were recorded to be 6.15 percent and 8.6 percent for the devices without and with an ionic liquid interlayer. The results show that ionic liquid can enhance the device performance for 2D-3D lead-halide perovskite solar cells.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133112019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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