Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117654
Souravi Mukherjee, Eklavy Vashist, Ambarish Ghosh
Nitrogen-vacancy (NV) centers in nanodiamonds (NDs) have emerged as powerful quantum sensors, with diverse capabilities in nano-scale sensing of physical quantities (like temperature, magnetic or electric fields), even in the fluidic medium. We, in this work, study the effects of continuous infrared (IR) illumination on ND photoluminescence (Pl) and the simultaneous effects on the contrast in optically detected magnetic resonance (ODMR) signal. Our study suggests a similar decreasing trend in both the Pl and the ODMR contrast with increasing IR powers. The dependence of ODMR contrast on IR power is seen to be more sensitive and robust. Simultaneous NV-based temperature measurements on the NDs showed no substantial change in temperature. This further indicates that such quenching effects are not a result of the heating of the NDs.
{"title":"Fluorescent nanodiamonds as quantum sensors: effects of infrared illumination","authors":"Souravi Mukherjee, Eklavy Vashist, Ambarish Ghosh","doi":"10.1109/ICEE56203.2022.10117654","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117654","url":null,"abstract":"Nitrogen-vacancy (NV) centers in nanodiamonds (NDs) have emerged as powerful quantum sensors, with diverse capabilities in nano-scale sensing of physical quantities (like temperature, magnetic or electric fields), even in the fluidic medium. We, in this work, study the effects of continuous infrared (IR) illumination on ND photoluminescence (Pl) and the simultaneous effects on the contrast in optically detected magnetic resonance (ODMR) signal. Our study suggests a similar decreasing trend in both the Pl and the ODMR contrast with increasing IR powers. The dependence of ODMR contrast on IR power is seen to be more sensitive and robust. Simultaneous NV-based temperature measurements on the NDs showed no substantial change in temperature. This further indicates that such quenching effects are not a result of the heating of the NDs.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128486918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117951
C. P. Singh, K. Ghosh
An engineered electron blocking layer structure has been proposed to alleviate the significant electron leakage problem in InGaN/GaN multiple quantum well based micro-LED at lower current density (@ 1A/cm2). The simulation results show that the level of electron concentration leakage in the p-region is drastically reduced by ~ 1016times compared to a reference structure (Sample A), added with improved hole injection efficiency @ 1 A/cm2. As a result, the internal quantum efficiency is enhanced by ~1.4 times with a 50% reduction in input operating voltage compared to Sample A to reach 1 A/cm2. In addition, the efficiency droop in our proposed structure is reduced from 45% to 10% @ 200 A/cm2 compared to Sample A.
提出了一种工程化的电子阻挡层结构，以缓解InGaN/GaN多量子阱微led在低电流密度(@ 1A/cm2)下严重的电子泄漏问题。模拟结果表明，与参考结构(样品a)相比，p区电子浓度泄漏水平大幅降低了约1016倍，并提高了空穴注入效率@ 1 a /cm2。结果表明，与样品a相比，内部量子效率提高了1.4倍，输入工作电压降低了50%，达到1 a /cm2。此外，与样品A相比，我们提出的结构的效率下降从45%减少到10% @ 200 A/cm2。
{"title":"Improved Carrier Confinement With Engineered Electron Blocking Layer in InGaN/GaN-Based Micro-LED at a Lower Current Density","authors":"C. P. Singh, K. Ghosh","doi":"10.1109/ICEE56203.2022.10117951","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117951","url":null,"abstract":"An engineered electron blocking layer structure has been proposed to alleviate the significant electron leakage problem in InGaN/GaN multiple quantum well based micro-LED at lower current density (@ 1A/cm2). The simulation results show that the level of electron concentration leakage in the p-region is drastically reduced by ~ 1016times compared to a reference structure (Sample A), added with improved hole injection efficiency @ 1 A/cm2. As a result, the internal quantum efficiency is enhanced by ~1.4 times with a 50% reduction in input operating voltage compared to Sample A to reach 1 A/cm2. In addition, the efficiency droop in our proposed structure is reduced from 45% to 10% @ 200 A/cm2 compared to Sample A.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129348141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117901
S. Pal, Frank Pavlik, F. G. Anderson, A. Aboketaf, R. Sporer, Michelle Zhang, Shenghua Song
A theoretical and experimental study has been carried out on thermal phase-shifters developed using silicon photonics technology. It has also been shown that Mach Zehnder Interferometer (MZI) structures developed with sealed under-cut thermal phase-shifters show lower value of $P$π (~V7 mW) compared to MZI structures developed using standard thermal phase-shifters (P π~V32 mW) while both have waveguides with similar cross-sectional geometries. MZI structures developed with thermal phase-shifters were designed to guide only TE- polarized light over the O-band (1260-1360nm) and extended C-Band (1500-1600nm).
{"title":"Low Pπ- value Thermal Phase-Shifters in Si-Photonics Technology","authors":"S. Pal, Frank Pavlik, F. G. Anderson, A. Aboketaf, R. Sporer, Michelle Zhang, Shenghua Song","doi":"10.1109/ICEE56203.2022.10117901","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117901","url":null,"abstract":"A theoretical and experimental study has been carried out on thermal phase-shifters developed using silicon photonics technology. It has also been shown that Mach Zehnder Interferometer (MZI) structures developed with sealed under-cut thermal phase-shifters show lower value of $P$π (~V7 mW) compared to MZI structures developed using standard thermal phase-shifters (P π~V32 mW) while both have waveguides with similar cross-sectional geometries. MZI structures developed with thermal phase-shifters were designed to guide only TE- polarized light over the O-band (1260-1360nm) and extended C-Band (1500-1600nm).","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127182519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117711
Apoorva Singh, Digvijay Singh, Ram Prakash Singh, R. Ranjan, Praveen C Ramamurthy
Here the light responsivity of electrically poled ferroelectric piezoceramics with the composition (0.3) BiFe03- (0.7) Pb0.9sLa0.05 (Zr0.57Ti0.43)0.9875O3 (BFPTZT) through electrical current-voltage (IV) characterizations in dark and 1 Sun (AM 1.5 G) illumination were evaluated. Distinct current features (~ 10 nA) are observed from a thin solid pallet in the presence of light than dark, indicating light sensitivity. The material in the finely grained powdered form is introduced in the PEDOT: PSS, a hole transport layer of perovskite solar cell. Both poled, and unpoled samples resulted in different characteristics than the reference devices. The poled-BFPTZT- based device is found to be substantially perturbed with the light exposure and duration with the characteristics resembling memory effect, potentially arising due to the photoactivated domain alignments.
{"title":"Photo-response and memory effect resemblance of Piezoceramics adapted in photovoltaic architecture","authors":"Apoorva Singh, Digvijay Singh, Ram Prakash Singh, R. Ranjan, Praveen C Ramamurthy","doi":"10.1109/ICEE56203.2022.10117711","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117711","url":null,"abstract":"Here the light responsivity of electrically poled ferroelectric piezoceramics with the composition (0.3) BiFe03- (0.7) Pb0.9sLa0.05 (Zr0.57Ti0.43)0.9875O3 (BFPTZT) through electrical current-voltage (IV) characterizations in dark and 1 Sun (AM 1.5 G) illumination were evaluated. Distinct current features (~ 10 nA) are observed from a thin solid pallet in the presence of light than dark, indicating light sensitivity. The material in the finely grained powdered form is introduced in the PEDOT: PSS, a hole transport layer of perovskite solar cell. Both poled, and unpoled samples resulted in different characteristics than the reference devices. The poled-BFPTZT- based device is found to be substantially perturbed with the light exposure and duration with the characteristics resembling memory effect, potentially arising due to the photoactivated domain alignments.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123738296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117626
Sandip Mondal, R. Bisht, Chengyang Zhang, S. Ramanathan
Biological neural systems can learn and forget information that is one possible mechanism for stability and lifelong learning of neural circuits. Emulating such features in electronic devices is essential for advancing neuromorphic electronics. We discuss examples of memory devices using strongly correlated oxides to illustrate learning behavior in this conference proceeding. We give examples of transient memory and forgetting dynamics by controlling the strength of the electrical stimuli as well as stochastic behavior. Using examples of prototypical Mott insulators such as NiO and VO2, we present our vision for a neuromorphic platform utilizing quantum materials. The studies inform design of electronic hardware in emerging AI and can in future be extended to brain-machine interfaces.
{"title":"Transient memory and learning in correlated oxide neuromorphic devices","authors":"Sandip Mondal, R. Bisht, Chengyang Zhang, S. Ramanathan","doi":"10.1109/ICEE56203.2022.10117626","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117626","url":null,"abstract":"Biological neural systems can learn and forget information that is one possible mechanism for stability and lifelong learning of neural circuits. Emulating such features in electronic devices is essential for advancing neuromorphic electronics. We discuss examples of memory devices using strongly correlated oxides to illustrate learning behavior in this conference proceeding. We give examples of transient memory and forgetting dynamics by controlling the strength of the electrical stimuli as well as stochastic behavior. Using examples of prototypical Mott insulators such as NiO and VO2, we present our vision for a neuromorphic platform utilizing quantum materials. The studies inform design of electronic hardware in emerging AI and can in future be extended to brain-machine interfaces.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132461148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117866
Anurag Dwivedi, Shalu Saini, Anil Lodhi, Harshit Agarwal, S. P. Tiwari
The improvement in performance of the resistive memory device with change in phase of insulating layer due to different deposition temperatures is investigated. The active switching layer TiO2 was deposited by Atomic Layer Deposition (ALD) at 150°C, 180 °C and 200°C to obtain amorphous, lower crystalline order, and higher crystalline order switching medium. All the devices have shown good switching characteristics but with varied endurance variability. The device with TiO2 deposited at 180 °C is giving better performance with current on/off ratio of 2>103, stable retention for 102 seconds and lower cycle-to-cycle variability. This work reports a technique to lower the cycle-to-cycle variation without introducing additional fabrication steps.
{"title":"Effect of Temperature Induced Phase Variation in ALD TiO2 Dielectric on the Switching Behaviour of RRAM Devices","authors":"Anurag Dwivedi, Shalu Saini, Anil Lodhi, Harshit Agarwal, S. P. Tiwari","doi":"10.1109/ICEE56203.2022.10117866","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117866","url":null,"abstract":"The improvement in performance of the resistive memory device with change in phase of insulating layer due to different deposition temperatures is investigated. The active switching layer TiO2 was deposited by Atomic Layer Deposition (ALD) at 150°C, 180 °C and 200°C to obtain amorphous, lower crystalline order, and higher crystalline order switching medium. All the devices have shown good switching characteristics but with varied endurance variability. The device with TiO2 deposited at 180 °C is giving better performance with current on/off ratio of 2>103, stable retention for 102 seconds and lower cycle-to-cycle variability. This work reports a technique to lower the cycle-to-cycle variation without introducing additional fabrication steps.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132968633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117760
Samadrita Das, T. Lenka, F. Talukdar, G. Crupi, H. Nguyen
We report on the illustration of the novel electron blocking layer (EBL) free AIlnN nanowire light-emitting diodes (LED) with a single-quantum well (SQW) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using Atlas TCAD and compared them with simulated AIGaN nanowire DUV LED. From the simulation results, a significant efficiency droop was observed in AIGaN LED, attributed to the significant electron leakage. However, compared to AIGaN nanowire DUV LED at a similar emission wavelength, the proposed (SQW) AIlnN- based light-emitter offers higher internal quantum efficiency without droop up to the current density of 1500 A/cm2 and high output optical power. Further research shows that the performance of the AIlnN DUV nanowire LED reduces with multiple QWs in the active region due to the presence of the non- uniform carrier distribution in the active region. This study provides important insights into the design of a new type of high- performance AIlnN nanowire DUV LED, by replacing currently used AIGaN semiconductors.
我们报道了一种新型的无电子阻挡层(EBL)的AIlnN纳米线发光二极管(LED)，其单量子阱(SQW)工作在深紫外(DUV)波长区域(sub-250 nm)。我们系统地分析了Atlas TCAD的结果，并将其与模拟的AIGaN纳米线DUV LED进行了比较。从模拟结果来看，由于大量的电子泄漏，在AIGaN LED中观察到明显的效率下降。然而，与相似发射波长的AIGaN纳米线DUV LED相比，本文提出的(SQW)基于AIlnN的光发射器具有更高的内部量子效率，且高达1500 a /cm2的电流密度和高输出光功率。进一步的研究表明，由于有源区域存在非均匀载流子分布，当有源区域存在多个量子波时，AIlnN DUV纳米线LED的性能会下降。这项研究为设计一种新型的高性能AIlnN纳米线DUV LED提供了重要的见解，取代了目前使用的AIGaN半导体。
{"title":"Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED","authors":"Samadrita Das, T. Lenka, F. Talukdar, G. Crupi, H. Nguyen","doi":"10.1109/ICEE56203.2022.10117760","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117760","url":null,"abstract":"We report on the illustration of the novel electron blocking layer (EBL) free AIlnN nanowire light-emitting diodes (LED) with a single-quantum well (SQW) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using Atlas TCAD and compared them with simulated AIGaN nanowire DUV LED. From the simulation results, a significant efficiency droop was observed in AIGaN LED, attributed to the significant electron leakage. However, compared to AIGaN nanowire DUV LED at a similar emission wavelength, the proposed (SQW) AIlnN- based light-emitter offers higher internal quantum efficiency without droop up to the current density of 1500 A/cm2 and high output optical power. Further research shows that the performance of the AIlnN DUV nanowire LED reduces with multiple QWs in the active region due to the presence of the non- uniform carrier distribution in the active region. This study provides important insights into the design of a new type of high- performance AIlnN nanowire DUV LED, by replacing currently used AIGaN semiconductors.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130258961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117716
Simranjeet Singh, P. N, T. Naik, Radhika Varshney, Praveen C Ramamurthy
For the first time, low-cost and green cobalt oxide NPs were synthesized in a one-step process and the synthesized material was used as a catalyst for the electrochemical detection of Pb ions. The synthesized material was characterized by using various techniques such as UV, FTIR and XRD. The green material shows a linear range of detection of 0.9 μM. The electrode fabricated shows an excellent recovery rate in real sample analysis for electrochemical sensing of Pb ions.
{"title":"Use of novel green synthesized C0304-NPs for electrochemical sensing of Pb ions","authors":"Simranjeet Singh, P. N, T. Naik, Radhika Varshney, Praveen C Ramamurthy","doi":"10.1109/ICEE56203.2022.10117716","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117716","url":null,"abstract":"For the first time, low-cost and green cobalt oxide NPs were synthesized in a one-step process and the synthesized material was used as a catalyst for the electrochemical detection of Pb ions. The synthesized material was characterized by using various techniques such as UV, FTIR and XRD. The green material shows a linear range of detection of 0.9 μM. The electrode fabricated shows an excellent recovery rate in real sample analysis for electrochemical sensing of Pb ions.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129186930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117847
Jigar Faria, Shikha Marwaha, M. Sadullah, K. Ghosh
Silicon photovoltaic (PV) modules have a high susceptibility to moisture ingression. The impact of moisture is such that it delaminates the ethylene vinyl acetate (EVA) layer and short-circuits the PV modules by degrading the silver paste at the contacts of the solar cells. In this paper, experimental determination of the flow of moisture in silicon PV modules using SHT25 humidity and temperature sensors has been carried out. For analysis, three configurations have been proposed viz. backsheet-printed circuit board with sensor (PCB)- EVA-glass, EVA-PCB-glass, and backsheet-EVA-PCB-EVA-glass. The obtained experimental results were fitted with the analytical equations to determine the diffusivity of both EVA and backsheet materials. The obtained diffusivity of EVA is 120 times that of the backsheet indicating that diffusion through EVA is an instantaneous process.
硅光伏(PV)组件对水分侵入有很高的敏感性。湿气的影响是这样的，它使醋酸乙烯(EVA)层分层，并通过降解太阳能电池接触处的银浆使光伏组件短路。本文利用SHT25温湿度传感器对硅光伏组件中的水分流动进行了实验测定。为了进行分析，提出了三种配置，即带传感器的背板印刷电路板(PCB)- eva玻璃、eva -PCB玻璃和背板- eva -PCB- eva玻璃。所得实验结果与EVA和背板材料扩散系数的解析方程拟合。得到的EVA扩散系数是背板扩散系数的120倍，表明通过EVA扩散是一个瞬时过程。
{"title":"Experimental Determination of Diffusivity of Backsheet and EVA for Silicon Photovoltaic Modules","authors":"Jigar Faria, Shikha Marwaha, M. Sadullah, K. Ghosh","doi":"10.1109/ICEE56203.2022.10117847","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117847","url":null,"abstract":"Silicon photovoltaic (PV) modules have a high susceptibility to moisture ingression. The impact of moisture is such that it delaminates the ethylene vinyl acetate (EVA) layer and short-circuits the PV modules by degrading the silver paste at the contacts of the solar cells. In this paper, experimental determination of the flow of moisture in silicon PV modules using SHT25 humidity and temperature sensors has been carried out. For analysis, three configurations have been proposed viz. backsheet-printed circuit board with sensor (PCB)- EVA-glass, EVA-PCB-glass, and backsheet-EVA-PCB-EVA-glass. The obtained experimental results were fitted with the analytical equations to determine the diffusivity of both EVA and backsheet materials. The obtained diffusivity of EVA is 120 times that of the backsheet indicating that diffusion through EVA is an instantaneous process.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128838702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Even though multiple reports are available on photodetectors, the problem that still remain unaddressed is the low photoresponsivity while trying to increase the range of detection. In this work, broadband (UV-visible) photodetector was demonstrated by integrating zero-dimensional (0D) WS2-QDs on two-dimensional (2D) monolayer MoS2. WS2-QDs are sensitive to UV light, and MoS2 is sensitive to visible light. The maximum responsivity of the fabricated WS2-QDs/MoS2 device was found to be ~ 392 A/W. In this work, not only the photodetection range but also photoresponsivity is improved, which is a major step in the design of next-generation 2D materials based optoelectronics.
{"title":"High-performance Broadband Photodetector based on a WS2-QD/monolayer MoS2 0D/2D Mixed-dimensional Heterostructure","authors":"Venkatarao Selamneni, Chandra sekhar Reddy Kolli, Parikshit Sahatiya","doi":"10.1109/ICEE56203.2022.10118313","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118313","url":null,"abstract":"Even though multiple reports are available on photodetectors, the problem that still remain unaddressed is the low photoresponsivity while trying to increase the range of detection. In this work, broadband (UV-visible) photodetector was demonstrated by integrating zero-dimensional (0D) WS2-QDs on two-dimensional (2D) monolayer MoS2. WS2-QDs are sensitive to UV light, and MoS2 is sensitive to visible light. The maximum responsivity of the fabricated WS2-QDs/MoS2 device was found to be ~ 392 A/W. In this work, not only the photodetection range but also photoresponsivity is improved, which is a major step in the design of next-generation 2D materials based optoelectronics.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"2008 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125610065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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