Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.786068
C. Guoying, Ma Zuguang, Wang Xingqiao
Strained InGaAs/AlGaAs double quantum well lasers with two pairs of GRIN heterostructures have been fabricated by Metal-Organic Chemical Vapor Deposition (MOCVD). Its wavelength ranges from 970 to 982 nm, threshold current density is 140 A/cm/sup 2/ at room temperature CW operation. 520 mw/facet and 1.49 w/facet for CW output optical power has been obtained under 0.9 A and 2.0 A operation, respectively. The maximum CW output optical power can come up to 2.4 w/facet.
{"title":"Strained InGaAs/AlGaAs double quantum well laser with GRIN-SCH","authors":"C. Guoying, Ma Zuguang, Wang Xingqiao","doi":"10.1109/ICSICT.1998.786068","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.786068","url":null,"abstract":"Strained InGaAs/AlGaAs double quantum well lasers with two pairs of GRIN heterostructures have been fabricated by Metal-Organic Chemical Vapor Deposition (MOCVD). Its wavelength ranges from 970 to 982 nm, threshold current density is 140 A/cm/sup 2/ at room temperature CW operation. 520 mw/facet and 1.49 w/facet for CW output optical power has been obtained under 0.9 A and 2.0 A operation, respectively. The maximum CW output optical power can come up to 2.4 w/facet.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127896518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785779
C. Y. Wong, M. Chan
It has been predicted that microprocessors will use over 13 million transistors by year 2001 and that by year 2010, over 90 million transistors will he deployed to fabricate semiconductor chips with ever increasing efficiency. It has also been generally accepted that the costs of a wafer fab essentially double for each new generation of microprocessor. In the coming 21st Century, VLSI process integration, in product/research/development and in manufacturing, will need to meet the demands of not only the technology innovations, the reliability and scaling challenges, but also the cost effectiveness of yield, factory workflow and capacity management. Issues addressing these factors, sometimes leading in diametric directions, and the novel solutions, are presented and discussed.
{"title":"VLSI process integration","authors":"C. Y. Wong, M. Chan","doi":"10.1109/ICSICT.1998.785779","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785779","url":null,"abstract":"It has been predicted that microprocessors will use over 13 million transistors by year 2001 and that by year 2010, over 90 million transistors will he deployed to fabricate semiconductor chips with ever increasing efficiency. It has also been generally accepted that the costs of a wafer fab essentially double for each new generation of microprocessor. In the coming 21st Century, VLSI process integration, in product/research/development and in manufacturing, will need to meet the demands of not only the technology innovations, the reliability and scaling challenges, but also the cost effectiveness of yield, factory workflow and capacity management. Issues addressing these factors, sometimes leading in diametric directions, and the novel solutions, are presented and discussed.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128447290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785867
Bingzong Li, X. Qu, G. Ru, H. Mo, J. Liu
Co-silicide/Si hetero-epitaxial growth by solid phase reaction of various multilayers with a Ti-interlayer and its mechanism are studied and discussed.
研究和讨论了含ti中间层的多种多层材料固相反应生长co -硅化物/Si异质外延及其机理。
{"title":"Multilayer solid phase reaction and epitaxial growth of metal silicide on Si","authors":"Bingzong Li, X. Qu, G. Ru, H. Mo, J. Liu","doi":"10.1109/ICSICT.1998.785867","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785867","url":null,"abstract":"Co-silicide/Si hetero-epitaxial growth by solid phase reaction of various multilayers with a Ti-interlayer and its mechanism are studied and discussed.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115437139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785955
S. Arscott, R. Miles, S. J. Milne
Summary form only given. Bulk Acoustic Wave (BAW) resonant devices based on quartz crystals are widely used in electronic systems at frequencies up to a few tens of MHz. However for operation at higher frequencies the crystal must be made much thinner and consequently-ceases to be mechanically self supporting. Similarly, Surface Acoustic Wave (SAW) device dimensions shrink at high frequencies requiring sub-micron electrode structures for microwave operation. In this paper we describe how the submicron critical dimensionality of acoustic wave devices can be achieved by depositing thin piezo-ceramic films on semiconductor substrates with the subsequent fabrication of BAW devices. The piezoelectric ceramic used in this work is sol-gel derived lead zirconate titanate (PZT) about 0.5 /spl mu/m thick. Films having the composition Pb(Zr/sub 0.53/Ti/sub 0.47/)O/sub 3/, have been prepared on platinized silicon (Pt-Si) and platinized gallium arsenide (Pt-GaAs) substrates using a 1,3-propanediol and a novel 1,1,1-tris(hydroxymethyl)ethane based sol-gel technique. Crystallisation of the PZT films on the Pt-GaAs was achieved by firing the sol-gel coating at 650/spl deg/C for a dwell time of 1 second using rapid thermal processing (RTP) techniques. Films having the required thickness of /spl sim/0.5 /spl mu/m were produced from a single deposition of the precursor sol resulted. Average values of remnant polarisation (P/sub r/) for the Films were 29 /spl mu/C/cm/sup 2/ and 24 /spl mu/C/cm/sup 2/ on Pt-Si and Pt-GaAs respectively, comparing very well with bulk values. Preliminary microwave characterisation performed on PZT/Pt-Si based BAW resonator structures indicates a fundamental parallel resonance at 0.1 GHz, having an unloaded Q of 1100. Higher frequency operation will be obtained when substrate thinning under the active layer has been optimised.
{"title":"Lead zirconate titanate thin films on GaAs for microwave device applications","authors":"S. Arscott, R. Miles, S. J. Milne","doi":"10.1109/ICSICT.1998.785955","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785955","url":null,"abstract":"Summary form only given. Bulk Acoustic Wave (BAW) resonant devices based on quartz crystals are widely used in electronic systems at frequencies up to a few tens of MHz. However for operation at higher frequencies the crystal must be made much thinner and consequently-ceases to be mechanically self supporting. Similarly, Surface Acoustic Wave (SAW) device dimensions shrink at high frequencies requiring sub-micron electrode structures for microwave operation. In this paper we describe how the submicron critical dimensionality of acoustic wave devices can be achieved by depositing thin piezo-ceramic films on semiconductor substrates with the subsequent fabrication of BAW devices. The piezoelectric ceramic used in this work is sol-gel derived lead zirconate titanate (PZT) about 0.5 /spl mu/m thick. Films having the composition Pb(Zr/sub 0.53/Ti/sub 0.47/)O/sub 3/, have been prepared on platinized silicon (Pt-Si) and platinized gallium arsenide (Pt-GaAs) substrates using a 1,3-propanediol and a novel 1,1,1-tris(hydroxymethyl)ethane based sol-gel technique. Crystallisation of the PZT films on the Pt-GaAs was achieved by firing the sol-gel coating at 650/spl deg/C for a dwell time of 1 second using rapid thermal processing (RTP) techniques. Films having the required thickness of /spl sim/0.5 /spl mu/m were produced from a single deposition of the precursor sol resulted. Average values of remnant polarisation (P/sub r/) for the Films were 29 /spl mu/C/cm/sup 2/ and 24 /spl mu/C/cm/sup 2/ on Pt-Si and Pt-GaAs respectively, comparing very well with bulk values. Preliminary microwave characterisation performed on PZT/Pt-Si based BAW resonator structures indicates a fundamental parallel resonance at 0.1 GHz, having an unloaded Q of 1100. Higher frequency operation will be obtained when substrate thinning under the active layer has been optimised.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116139300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785880
Yongjun Wu, Mingzhen Xu, Changhua Tan, Jian-Lin Wei, Yi Liang, Yangyuan Wang
The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias.
{"title":"Discharging and recharging of anomalous positive charges in MOSFETs","authors":"Yongjun Wu, Mingzhen Xu, Changhua Tan, Jian-Lin Wei, Yi Liang, Yangyuan Wang","doi":"10.1109/ICSICT.1998.785880","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785880","url":null,"abstract":"The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114639607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785884
T. Sheng, C. Tung, J.L.F. Wang
Transmission electron microscopy (TEM) has played an important role in silicon VLSI/ULSI process evaluation and failure analysis. More recently, it has also been applied to micro-electro-machine system (MEMS), MCM, ...etc. In this talk, a few recent TEM application developments are presented. Some of these TEM applications may seem very difficult or impossible previously. These new applications are made possible by innovative sample preparation break through.
{"title":"The recent TEM application development for microelectronics","authors":"T. Sheng, C. Tung, J.L.F. Wang","doi":"10.1109/ICSICT.1998.785884","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785884","url":null,"abstract":"Transmission electron microscopy (TEM) has played an important role in silicon VLSI/ULSI process evaluation and failure analysis. More recently, it has also been applied to micro-electro-machine system (MEMS), MCM, ...etc. In this talk, a few recent TEM application developments are presented. Some of these TEM applications may seem very difficult or impossible previously. These new applications are made possible by innovative sample preparation break through.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126919609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785923
S. Lingling, Yan Xiaolang, Wang Junhu, Cai Miaohua
This paper makes an attempt to compare several methods of interconnect delay modelling. The results of different interconnect delay analyses are given and compared with SPICE simulation results for testing basic interconnect net topology.
{"title":"The comparison of delay modeling for basic interconnect net topologies","authors":"S. Lingling, Yan Xiaolang, Wang Junhu, Cai Miaohua","doi":"10.1109/ICSICT.1998.785923","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785923","url":null,"abstract":"This paper makes an attempt to compare several methods of interconnect delay modelling. The results of different interconnect delay analyses are given and compared with SPICE simulation results for testing basic interconnect net topology.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127070642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785888
C. Detavernier, R. Degryse, R. Van Meirhaeghe, F. Cardon, G. Ru, Bingzong Li
With the increasing miniaturisation, the use of thin silicide films in VLSI technology becomes more important X-ray reflectivity (XRR) is a non-destructive method for the characterization of layer thickness, surface and interfacial roughness of thin films. We have used XRR for the characterization of thin CoSi/sub 2/ and PtSi layers. The silicide films were prepared by rapid thermal annealing and XRR war used before and alter silicidation to measure the layer thickness. The XRR results are compared with results obtained on the same films by Rutherford backscattering spectrometry (RBS), cross-sectional transmission electron microscopy (XTEM), profilometry and atomic force microscopy (AFM). By XRR we were able to accurately measure the thickness of silicide layers down to 3 nm.
{"title":"Non-destructive characterization of thin silicides using X-ray reflectivity","authors":"C. Detavernier, R. Degryse, R. Van Meirhaeghe, F. Cardon, G. Ru, Bingzong Li","doi":"10.1109/ICSICT.1998.785888","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785888","url":null,"abstract":"With the increasing miniaturisation, the use of thin silicide films in VLSI technology becomes more important X-ray reflectivity (XRR) is a non-destructive method for the characterization of layer thickness, surface and interfacial roughness of thin films. We have used XRR for the characterization of thin CoSi/sub 2/ and PtSi layers. The silicide films were prepared by rapid thermal annealing and XRR war used before and alter silicidation to measure the layer thickness. The XRR results are compared with results obtained on the same films by Rutherford backscattering spectrometry (RBS), cross-sectional transmission electron microscopy (XTEM), profilometry and atomic force microscopy (AFM). By XRR we were able to accurately measure the thickness of silicide layers down to 3 nm.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122021173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.786075
Xing Zhang, Ru Huang, X. Xi, M. Chan, P. Ko, Yangyuan Wang
Recessed channel SOI devices were investigated. In this paper, the structure and processing of such devices is described in detail. The characteristics of a SOI MOSFET using recessed channel technology are much better than normal thick non-depleted and thin-film fully depleted SOI MOSFETs. The 0.15/spl sim/4.0 /spl mu/m recessed channel SOI MOSFETs with a silicon channel film of 70 nm and a source/drain silicon film of 160 nm are developed using a submicron process. The transconductance and drain current are increased by 40% more than thin-film fully depleted SOI MOSFETs.
{"title":"The investigation of recessed channel SOI devices","authors":"Xing Zhang, Ru Huang, X. Xi, M. Chan, P. Ko, Yangyuan Wang","doi":"10.1109/ICSICT.1998.786075","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.786075","url":null,"abstract":"Recessed channel SOI devices were investigated. In this paper, the structure and processing of such devices is described in detail. The characteristics of a SOI MOSFET using recessed channel technology are much better than normal thick non-depleted and thin-film fully depleted SOI MOSFETs. The 0.15/spl sim/4.0 /spl mu/m recessed channel SOI MOSFETs with a silicon channel film of 70 nm and a source/drain silicon film of 160 nm are developed using a submicron process. The transconductance and drain current are increased by 40% more than thin-film fully depleted SOI MOSFETs.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115120917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.786074
W. Maszara
An extensive effort has been undertaken to benchmark the quality of the 200 mm SOI substrates, involving all viable sources of the material in the world. A comprehensive overview of the state of the art of all pertinent parameters of this material is given. The quality of the recent material appears very competitive with the bulk material. In particular, the level of defects in the SOI film is comparable to bulk, below 0.1/cm/sup 2/ for the best material. SOI wafer processing will require only minor equipment and process adjustments. The main challenges for the SOI material today is a sustainable consistency of its parameters, the price and volume availability.
{"title":"SOI material: ready to take over mainstream bulk Si","authors":"W. Maszara","doi":"10.1109/ICSICT.1998.786074","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.786074","url":null,"abstract":"An extensive effort has been undertaken to benchmark the quality of the 200 mm SOI substrates, involving all viable sources of the material in the world. A comprehensive overview of the state of the art of all pertinent parameters of this material is given. The quality of the recent material appears very competitive with the bulk material. In particular, the level of defects in the SOI film is comparable to bulk, below 0.1/cm/sup 2/ for the best material. SOI wafer processing will require only minor equipment and process adjustments. The main challenges for the SOI material today is a sustainable consistency of its parameters, the price and volume availability.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"147 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125870910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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