Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785965
J. Chengzhou, Liao Huailin, Li Guohui
A punch-through type AlGaAs-GaAs heterojunction phototransistor with a guarding modulation electrode is analyzed by a numerical procedure. The augmented drift-diffusion model is regarded as a suitable model to describe the device, and the coupled equations are solved by the successive line overrelaxation method. The distribution of carriers and electric potential, transportation of non-equilibrium carriers and frequency characteristics are computed systematically. Preliminary results are presented and discussed briefly.
{"title":"A numerical analysis for heterojunction phototransistor","authors":"J. Chengzhou, Liao Huailin, Li Guohui","doi":"10.1109/ICSICT.1998.785965","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785965","url":null,"abstract":"A punch-through type AlGaAs-GaAs heterojunction phototransistor with a guarding modulation electrode is analyzed by a numerical procedure. The augmented drift-diffusion model is regarded as a suitable model to describe the device, and the coupled equations are solved by the successive line overrelaxation method. The distribution of carriers and electric potential, transportation of non-equilibrium carriers and frequency characteristics are computed systematically. Preliminary results are presented and discussed briefly.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121489480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.786091
Wu Chuanliang, C. Jianmin, Huang Chang, Hu Guicai, Li Yinbo, Xu Yangzhen
The structure of DTMOSFET is proposed. SOI DTMOSFET devices and ring oscillators are designed and fabricated. The characteristics of DTMOS devices and the speed performance of DTMOS-based ring oscillators are discussed.
{"title":"Experimental studies of SOI DTMOSFET for low-voltage low-power applications","authors":"Wu Chuanliang, C. Jianmin, Huang Chang, Hu Guicai, Li Yinbo, Xu Yangzhen","doi":"10.1109/ICSICT.1998.786091","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.786091","url":null,"abstract":"The structure of DTMOSFET is proposed. SOI DTMOSFET devices and ring oscillators are designed and fabricated. The characteristics of DTMOS devices and the speed performance of DTMOS-based ring oscillators are discussed.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116977436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.786066
Q. Gong, J.B. Liang, B. Xu, Z.G. Wang
Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and quantum wire lasers. We report on quantum dot lasers with active media of vertically stacked InAs quantum dot layers grown by molecular beam epitaxy. The laser diodes were fabricated and the threshold current density of 220 A/cm/sup 2/ was achieved at room temperature with lasing wavelength of 951 nm. The characteristic temperature T/sub 0/ was measured to be 333 K and 157 K for the temperature ranges of 40-180 K and 180-300 K, respectively.
{"title":"Room-temperature continuous-wave lasing from InAs/GaAs quantum dot laser grown by molecular beam epitaxy","authors":"Q. Gong, J.B. Liang, B. Xu, Z.G. Wang","doi":"10.1109/ICSICT.1998.786066","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.786066","url":null,"abstract":"Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and quantum wire lasers. We report on quantum dot lasers with active media of vertically stacked InAs quantum dot layers grown by molecular beam epitaxy. The laser diodes were fabricated and the threshold current density of 220 A/cm/sup 2/ was achieved at room temperature with lasing wavelength of 951 nm. The characteristic temperature T/sub 0/ was measured to be 333 K and 157 K for the temperature ranges of 40-180 K and 180-300 K, respectively.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115130530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785972
Shi Yan-li, Shen Guang-di, Wu Xing-hui, Feng Wen-Qing, Chen Tie-Jin
Instead of anodization, photochemical oxidation is used to perform the surface passivation of n-type mercury cadmium tellurium (HgCdTe) photoconductance detectors for the first time. X-ray photoelectron spectroscopy (XPS) is used to analyze the influence of the oxidation condition on the oxidation reaction. The passivation mechanism of photochemical oxidation is also studied. Comparing of the performances of the two kinds of detectors with each other, which were prepared under the same technique conditions by the anodization and the photochemical oxidation respectively, it shows that the results of photochemical oxidation is slightly superior to that of anodic oxidation.
{"title":"Study and mechanism analysis of photochemical oxidation for n-type mercury cadmium tellurium photoconductance detectors","authors":"Shi Yan-li, Shen Guang-di, Wu Xing-hui, Feng Wen-Qing, Chen Tie-Jin","doi":"10.1109/ICSICT.1998.785972","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785972","url":null,"abstract":"Instead of anodization, photochemical oxidation is used to perform the surface passivation of n-type mercury cadmium tellurium (HgCdTe) photoconductance detectors for the first time. X-ray photoelectron spectroscopy (XPS) is used to analyze the influence of the oxidation condition on the oxidation reaction. The passivation mechanism of photochemical oxidation is also studied. Comparing of the performances of the two kinds of detectors with each other, which were prepared under the same technique conditions by the anodization and the photochemical oxidation respectively, it shows that the results of photochemical oxidation is slightly superior to that of anodic oxidation.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116753448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785819
Wang Wei, L. Xiaowei, Wang Xilian, L. Yuqiang, Fan Maojun
The main influences of KOH anisotropic etching of Si <100> wafers on etched surface flatness are investigated experimentally. In the Si membrane etching with Si/sub 3/N/sub 4/ mask, the Si/sub 3/N/sub 4/ etching and the sediments in KOH aqueous solution are found as the main influences. The effective method to improve surface quality is presented by the mechanism analysis.
{"title":"Investigation of KOH anisotropic etching of Si <100> wafers for improving etched surface quality","authors":"Wang Wei, L. Xiaowei, Wang Xilian, L. Yuqiang, Fan Maojun","doi":"10.1109/ICSICT.1998.785819","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785819","url":null,"abstract":"The main influences of KOH anisotropic etching of Si <100> wafers on etched surface flatness are investigated experimentally. In the Si membrane etching with Si/sub 3/N/sub 4/ mask, the Si/sub 3/N/sub 4/ etching and the sediments in KOH aqueous solution are found as the main influences. The effective method to improve surface quality is presented by the mechanism analysis.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116769503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785970
Chien-Ping Lee, Shiang-Yu Wang
By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs have also demonstrated with excellent performance.
{"title":"Normal incident quantum well infrared photodetectors","authors":"Chien-Ping Lee, Shiang-Yu Wang","doi":"10.1109/ICSICT.1998.785970","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785970","url":null,"abstract":"By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs have also demonstrated with excellent performance.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121414486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785929
Liao Xiaoyong, Ji Lijiu
A new Quadru-Tree algorithm, by which the transition probabilities of circuit nodes, including all internal and output nodes, can be exactly worked out, and its program implementation are presented in this paper. As evidence of its accuracy and efficiency, the result of one example run in the prototype is reported, as well.
{"title":"Quadru-tree algorithm for transition probability in CMOS IC power estimation","authors":"Liao Xiaoyong, Ji Lijiu","doi":"10.1109/ICSICT.1998.785929","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785929","url":null,"abstract":"A new Quadru-Tree algorithm, by which the transition probabilities of circuit nodes, including all internal and output nodes, can be exactly worked out, and its program implementation are presented in this paper. As evidence of its accuracy and efficiency, the result of one example run in the prototype is reported, as well.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"3 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120927193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785956
Liang Ruigang, Wang Jian-nong, W. Yuqi, Dong Wenfu, Wu Dexin
A novel fabrication process, based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs, AlAs/InAs/GaAs quantum dots double barrier quantum well sub-micron resonant tunneling diodes (RTD), and the peak to valley current ratio could be over 20. A new model of multilevel logic SRAM with RTDs was proposed.
{"title":"Quantum resonant tunneling effect and multi-value logic memory","authors":"Liang Ruigang, Wang Jian-nong, W. Yuqi, Dong Wenfu, Wu Dexin","doi":"10.1109/ICSICT.1998.785956","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785956","url":null,"abstract":"A novel fabrication process, based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs, AlAs/InAs/GaAs quantum dots double barrier quantum well sub-micron resonant tunneling diodes (RTD), and the peak to valley current ratio could be over 20. A new model of multilevel logic SRAM with RTDs was proposed.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124057588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.785913
Li-Fu Chang, Y. Hsu, M. Chi
A new cell structure for minimizing bit-line coupling noise in DRAM with stack capacitor is proposed in this paper. The node capacitors are fabricated in between bit-lines, so that the bit-line to bit-line capacitance coupling is blocked by the node capacitor and is shielded by the plate. This scheme is referred to as Capacitor-Equiplanar-to-Bitline (CEB). In this way, as 3D simulation shows, the bit-line coupling noise can be almost eliminated to <1% of total bit-line capacitance. The SPICE simulation shows /spl sim/3 ns faster bit-line signal sensing in 0.25 /spl mu/m 64 Mb CMOS DRAM. The CEB scheme also leads to a smaller topology and a simpler fabrication process.
{"title":"A new DRAM cell structure with Capacitor-Equiplanar-to-Bitline (CEB) for bitline coupling noise elimination","authors":"Li-Fu Chang, Y. Hsu, M. Chi","doi":"10.1109/ICSICT.1998.785913","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785913","url":null,"abstract":"A new cell structure for minimizing bit-line coupling noise in DRAM with stack capacitor is proposed in this paper. The node capacitors are fabricated in between bit-lines, so that the bit-line to bit-line capacitance coupling is blocked by the node capacitor and is shielded by the plate. This scheme is referred to as Capacitor-Equiplanar-to-Bitline (CEB). In this way, as 3D simulation shows, the bit-line coupling noise can be almost eliminated to <1% of total bit-line capacitance. The SPICE simulation shows /spl sim/3 ns faster bit-line signal sensing in 0.25 /spl mu/m 64 Mb CMOS DRAM. The CEB scheme also leads to a smaller topology and a simpler fabrication process.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128268602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-21DOI: 10.1109/ICSICT.1998.786138
Deyi Kong, Y. Li, Tongli Wei, Weidong Nie, W. Qian
In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of the discontinuity on base and frequency performance has been discussed, Conclusions from our work may be also applicable to Si-BJTs.
{"title":"The influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high f/sub T/","authors":"Deyi Kong, Y. Li, Tongli Wei, Weidong Nie, W. Qian","doi":"10.1109/ICSICT.1998.786138","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.786138","url":null,"abstract":"In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of the discontinuity on base and frequency performance has been discussed, Conclusions from our work may be also applicable to Si-BJTs.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129568845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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