C. Popescu, A. McClelland, G. Dawson, J. Roth, D. Kazazis, Y. Ekinci, W. Theis, A. Robinson
Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the Multi-trigger concept. In a Multi-Trigger resist, multiple distinct chemical reactions in chemical amplification process must take place in close proximity simultaneously during resist exposure. Thus, at the edge of a pattern feature, where the density of photo-initiators that drive the chemical reactions is low, the amplification process ceases. This significantly reduces blurring effects and enables much improved resolution and line edge roughness while maintaining the sensitivity advantages of chemical amplification. A series of studies such as enhanced resist crosslinking, elimination of the nucleophilic quencher and the addition of high-Z additives to e-beam resist (as a means to increase sensitivity and modify secondary electron blur) were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning down to 28 nm pitch lines with a dose of 248 μC/cm2 using 100kV e-beam lithography, demonstrating the potential of the concept. Furthermore, it was possible to pattern 26 nm diameter pillars on a 60 nm pitch with dose of 221μC/cm2 with a line edge roughness of 2.3 nm.
{"title":"Multi-trigger resist for electron beam lithography","authors":"C. Popescu, A. McClelland, G. Dawson, J. Roth, D. Kazazis, Y. Ekinci, W. Theis, A. Robinson","doi":"10.1117/12.2279767","DOIUrl":"https://doi.org/10.1117/12.2279767","url":null,"abstract":"Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the Multi-trigger concept. In a Multi-Trigger resist, multiple distinct chemical reactions in chemical amplification process must take place in close proximity simultaneously during resist exposure. Thus, at the edge of a pattern feature, where the density of photo-initiators that drive the chemical reactions is low, the amplification process ceases. This significantly reduces blurring effects and enables much improved resolution and line edge roughness while maintaining the sensitivity advantages of chemical amplification. A series of studies such as enhanced resist crosslinking, elimination of the nucleophilic quencher and the addition of high-Z additives to e-beam resist (as a means to increase sensitivity and modify secondary electron blur) were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning down to 28 nm pitch lines with a dose of 248 μC/cm2 using 100kV e-beam lithography, demonstrating the potential of the concept. Furthermore, it was possible to pattern 26 nm diameter pillars on a 60 nm pitch with dose of 221μC/cm2 with a line edge roughness of 2.3 nm.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"10446 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129936778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Mohtashami, V. Navarro, H. Sadeghian, I. Englard, D. Shemesh, N. S. Malik
Using the electron beam (e-beam) as an advanced metrology tool in semiconductor manufacturing technologies has attracted many interests in the recent years. Owing to its high resolution and transparency to a wide range of materials including the metals, the e-beam shows a great promise to be used individually or in combination with the current optical metrology techniques in semiconductor industries. However, the e-beam can cause damages to the materials under inspection due to its relatively high energy. Therefore, determining the amount and type of damage as a result of the e-beam exposure is critical. Here, we present scanning probe microscopy techniques with the capability of measuring the e-beam induced damages on various materials. The experimental results of the e-beam induced damages on 300 mm silicon wafers covered by 1) patterned low-k material and 2) patterned low-k material filled with copper metal after chemical-mechanical polishing treatment are discussed. This method can be considered as a complementary approach to e-beam to ensure minimizing damage to the features.
{"title":"Characterizing electron beam induced damage in metrology and inspection of advance devices","authors":"A. Mohtashami, V. Navarro, H. Sadeghian, I. Englard, D. Shemesh, N. S. Malik","doi":"10.1117/12.2279707","DOIUrl":"https://doi.org/10.1117/12.2279707","url":null,"abstract":"Using the electron beam (e-beam) as an advanced metrology tool in semiconductor manufacturing technologies has attracted many interests in the recent years. Owing to its high resolution and transparency to a wide range of materials including the metals, the e-beam shows a great promise to be used individually or in combination with the current optical metrology techniques in semiconductor industries. However, the e-beam can cause damages to the materials under inspection due to its relatively high energy. Therefore, determining the amount and type of damage as a result of the e-beam exposure is critical. Here, we present scanning probe microscopy techniques with the capability of measuring the e-beam induced damages on various materials. The experimental results of the e-beam induced damages on 300 mm silicon wafers covered by 1) patterned low-k material and 2) patterned low-k material filled with copper metal after chemical-mechanical polishing treatment are discussed. This method can be considered as a complementary approach to e-beam to ensure minimizing damage to the features.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122628988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels as well as the choice of calibration patterns is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels –“internal, external, curvature, Gaussian, z_profile” – designed to capture the finest details of the resist contours and represent precisely any etch bias. By evaluating the etch kernels on various structures it is possible to map their etch signatures in a multi-dimensional space and analyze them to find an optimal sampling of structures to train an etch model. The method was specifically applied to a contact layer containing many different geometries and was used to successfully select appropriate calibration structures. The proposed kernels evaluated on these structures were combined to train an etch model significantly better than the standard one. We also illustrate the usage of the specific kernel “z_profile” which adds a third dimension to the description of the resist profile.
{"title":"Pattern sampling for etch model calibration","authors":"F. Weisbuch, A. Lutich, Jirka Schatz","doi":"10.1117/12.2279700","DOIUrl":"https://doi.org/10.1117/12.2279700","url":null,"abstract":"Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels as well as the choice of calibration patterns is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels –“internal, external, curvature, Gaussian, z_profile” – designed to capture the finest details of the resist contours and represent precisely any etch bias. By evaluating the etch kernels on various structures it is possible to map their etch signatures in a multi-dimensional space and analyze them to find an optimal sampling of structures to train an etch model. The method was specifically applied to a contact layer containing many different geometries and was used to successfully select appropriate calibration structures. The proposed kernels evaluated on these structures were combined to train an etch model significantly better than the standard one. We also illustrate the usage of the specific kernel “z_profile” which adds a third dimension to the description of the resist profile.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"73 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124256088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As the concepts of machine learning and artificial intelligence continue to grow in importance in the context of internet related applications it is still in its infancy when it comes to process control within the semiconductor industry. Especially the branch of mask manufacturing presents a challenge to the concepts of machine learning since the business process intrinsically induces pronounced product variability on the background of small plate numbers. In this paper we present the architectural set up of a machine learning algorithm which successfully deals with the demands and pitfalls of mask manufacturing. A detailed motivation of this basic set up followed by an analysis of its statistical properties is given. The machine learning set up for mask manufacturing involves two learning steps: an initial step which identifies and classifies the basic global CD patterns of a process. These results form the basis for the extraction of an optimized training set via balanced sampling. A second learning step uses this training set to obtain the local as well as global CD relationships induced by the manufacturing process. Using two production motivated examples we show how this approach is flexible and powerful enough to deal with the exacting demands of mask manufacturing. In one example we show how dedicated covariates can be used in conjunction with increased spatial resolution of the CD map model in order to deal with pathological CD effects at the mask boundary. The other example shows how the model set up enables strategies for dealing tool specific CD signature differences. In this case the balanced sampling enables a process control scheme which allows usage of the full tool park within the specified tight tolerance budget. Overall, this paper shows that the current rapid developments off the machine learning algorithms can be successfully used within the context of semiconductor manufacturing.
{"title":"Splendidly blended: a machine learning set up for CDU control","authors":"C. Utzny","doi":"10.1117/12.2279430","DOIUrl":"https://doi.org/10.1117/12.2279430","url":null,"abstract":"As the concepts of machine learning and artificial intelligence continue to grow in importance in the context of internet related applications it is still in its infancy when it comes to process control within the semiconductor industry. Especially the branch of mask manufacturing presents a challenge to the concepts of machine learning since the business process intrinsically induces pronounced product variability on the background of small plate numbers. In this paper we present the architectural set up of a machine learning algorithm which successfully deals with the demands and pitfalls of mask manufacturing. A detailed motivation of this basic set up followed by an analysis of its statistical properties is given. The machine learning set up for mask manufacturing involves two learning steps: an initial step which identifies and classifies the basic global CD patterns of a process. These results form the basis for the extraction of an optimized training set via balanced sampling. A second learning step uses this training set to obtain the local as well as global CD relationships induced by the manufacturing process. Using two production motivated examples we show how this approach is flexible and powerful enough to deal with the exacting demands of mask manufacturing. In one example we show how dedicated covariates can be used in conjunction with increased spatial resolution of the CD map model in order to deal with pathological CD effects at the mask boundary. The other example shows how the model set up enables strategies for dealing tool specific CD signature differences. In this case the balanced sampling enables a process control scheme which allows usage of the full tool park within the specified tight tolerance budget. Overall, this paper shows that the current rapid developments off the machine learning algorithms can be successfully used within the context of semiconductor manufacturing.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127517885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Michael J. Haslinger, Michael M. Mühlberger, Kurzmann Julia, Markus Ikeda, Anita Fuchsbauer, Thomas Faury, T. Köpplmayr, H. Außerhuber, Julia Kastner, Christian Wögerer, Daniel Fechtig
We are investigating the possibilities and the technical requirements to do nanopatterning on arbitrary curved surfaces. This is done considering the opportunities and possibilities of additive manufacturing. One of the key elements is the necessity to deposit material in well-defined areas of various complex 3D objects. In order to achieve this we are developing a robot-based inkjet printing. We report on our progress with this respect and also on our efforts to perform nanoimprinting on curved, possibly 3D-printed objects using materials that can be deposited by inkjet printing. In the framework of this article, we provide an overview over our current status, the challenges and an outlook.
{"title":"Function follows form: combining nanoimprint and inkjet printing","authors":"Michael J. Haslinger, Michael M. Mühlberger, Kurzmann Julia, Markus Ikeda, Anita Fuchsbauer, Thomas Faury, T. Köpplmayr, H. Außerhuber, Julia Kastner, Christian Wögerer, Daniel Fechtig","doi":"10.1117/12.2282503","DOIUrl":"https://doi.org/10.1117/12.2282503","url":null,"abstract":"We are investigating the possibilities and the technical requirements to do nanopatterning on arbitrary curved surfaces. This is done considering the opportunities and possibilities of additive manufacturing. One of the key elements is the necessity to deposit material in well-defined areas of various complex 3D objects. In order to achieve this we are developing a robot-based inkjet printing. We report on our progress with this respect and also on our efforts to perform nanoimprinting on curved, possibly 3D-printed objects using materials that can be deposited by inkjet printing. In the framework of this article, we provide an overview over our current status, the challenges and an outlook.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134484388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Bolten, K. Arat, N. Ünal, C. Porschatis, T. Wahlbrink, M. Lemme
In this paper key challenges posed on metrology by feature dimensions of 20nm and below are discussed. In detail, the need for software-based tools for SEM image acquisition and image analysis in environments where CD-SEMs are not available and/or not flexible enough to cover all inspection tasks is outlined. These environments include research at universities as well as industrial R and D environments focused on non-IC applications. The benefits of combining automated image acquisition and analysis with computational techniques to simulate image generation in a conventional analytical SEM with respect to the overall reliability, precision and speed of inspection will be demonstrated using real-life inspection tasks as demonstrators.
{"title":"Challenges for scanning electron microscopy and inspection on the nanometer scale for non-IC application: and how to tackle them using computational techniques","authors":"J. Bolten, K. Arat, N. Ünal, C. Porschatis, T. Wahlbrink, M. Lemme","doi":"10.1117/12.2279564","DOIUrl":"https://doi.org/10.1117/12.2279564","url":null,"abstract":"In this paper key challenges posed on metrology by feature dimensions of 20nm and below are discussed. In detail, the need for software-based tools for SEM image acquisition and image analysis in environments where CD-SEMs are not available and/or not flexible enough to cover all inspection tasks is outlined. These environments include research at universities as well as industrial R and D environments focused on non-IC applications. The benefits of combining automated image acquisition and analysis with computational techniques to simulate image generation in a conventional analytical SEM with respect to the overall reliability, precision and speed of inspection will be demonstrated using real-life inspection tasks as demonstrators.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128433171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mike Borisov, D. Chelyubeev, V. Chernik, Peter A. Miheev, Vadim I. Rakhovskiі, A. Shamaev
Authors of the report have been developing Sub-Wavelength Holographic Lithography (SWHL) methods of aerial image creation for IC layer topologies for the last several years. Sub-wavelength holographic masks (SWHM) have a number of substantial advantages in comparison with the traditional masks, which are used in projection photo-microlithography. The main advantages: there is no one-to-one correspondence between mask and image elements thus the effect of local mask defects almost completely eliminated [1]; holographic mask may consist of single-tipe elements with typical size many times bigger than projection mask elements [2]; technological methods of image quality optimization can be replaced by virtual routines in the process of the holographic mask calculating, that simplifies mask manufacturing and dramatically reduces the mask cost [3]; imaging via holographic mask does not need the projection lens, that significantly simplifies photolithographic tool and reduces ones cost. Our group developed effective methods of holographic mask synthesis and of aerial images modelling and created software package. This methods and calculation results were verified and reported many times [1-3].
{"title":"Experimental verification of sub-wavelength holographic lithography physical concept for single exposure fabrication of complex structures on planar and nonplanar surfaces","authors":"Mike Borisov, D. Chelyubeev, V. Chernik, Peter A. Miheev, Vadim I. Rakhovskiі, A. Shamaev","doi":"10.1117/12.2279736","DOIUrl":"https://doi.org/10.1117/12.2279736","url":null,"abstract":"Authors of the report have been developing Sub-Wavelength Holographic Lithography (SWHL) methods of aerial image creation for IC layer topologies for the last several years. Sub-wavelength holographic masks (SWHM) have a number of substantial advantages in comparison with the traditional masks, which are used in projection photo-microlithography. The main advantages: there is no one-to-one correspondence between mask and image elements thus the effect of local mask defects almost completely eliminated [1]; holographic mask may consist of single-tipe elements with typical size many times bigger than projection mask elements [2]; technological methods of image quality optimization can be replaced by virtual routines in the process of the holographic mask calculating, that simplifies mask manufacturing and dramatically reduces the mask cost [3]; imaging via holographic mask does not need the projection lens, that significantly simplifies photolithographic tool and reduces ones cost. Our group developed effective methods of holographic mask synthesis and of aerial images modelling and created software package. This methods and calculation results were verified and reported many times [1-3].","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131234969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Laforge, R. Anthony, P. McCloskey, C. O'Mathúna
In recent years, increased demand for high aspect ratio MEMS structures has driven the need for thick photoresist fabrication processes. In this work, the optimization of a thick photoresist process using a negative tone resist (THB-151N) is described. A thickness of 85 μm is obtained with an aspect ratio of 17:1 in a single coating process, with a 5 μm pitch. Conventional UV lithography is used and its parameters are optimized in order to achieve straight and near vertical sidewall profiles. The developed patterns are used as a mold to electroplate high aspect ratio copper windings of micro-inductors and micro-transformers. A high aspect ratio yields a copper track with a large cross sectional area resulting in a lower DC resistance. This enables a further reduction in the footprint area allowing for a more efficient manufacturing process and smaller device size. Unlike other high aspect ratio resist such as SU-8, this resist does not need a post exposure bake and can be readily removed after metal electroplating.
{"title":"A thick photoresist process for high aspect ratio MEMS applications","authors":"E. Laforge, R. Anthony, P. McCloskey, C. O'Mathúna","doi":"10.1117/12.2247899","DOIUrl":"https://doi.org/10.1117/12.2247899","url":null,"abstract":"In recent years, increased demand for high aspect ratio MEMS structures has driven the need for thick photoresist fabrication processes. In this work, the optimization of a thick photoresist process using a negative tone resist (THB-151N) is described. A thickness of 85 μm is obtained with an aspect ratio of 17:1 in a single coating process, with a 5 μm pitch. Conventional UV lithography is used and its parameters are optimized in order to achieve straight and near vertical sidewall profiles. The developed patterns are used as a mold to electroplate high aspect ratio copper windings of micro-inductors and micro-transformers. A high aspect ratio yields a copper track with a large cross sectional area resulting in a lower DC resistance. This enables a further reduction in the footprint area allowing for a more efficient manufacturing process and smaller device size. Unlike other high aspect ratio resist such as SU-8, this resist does not need a post exposure bake and can be readily removed after metal electroplating.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116952807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The race to 800 PPI and higher in mobile devices and the transition to OLED displays are driving a dramatic development of mask quality: resolution, CDU, registration, and complexity. 2D metrology for large area masks is necessary and must follow the roadmap. Driving forces in the market place point to continued development of even more dense displays. State-of-the-art metrology has proven itself capable of overlay below 40 nm and registration below 65 nm for G6 masks. Future developments include incoming and recurrent measurements of pellicalized masks at the panel maker’s factory site. Standardization of coordinate systems across supplier networks is feasible. This will enable better yield and production economy for both mask and panel maker. Better distortion correction methods will give better registration on the panels and relax the flatness requirements of the mask blanks. If panels are measured together with masks and the results are used to characterize the aligners, further quality and yield improvements are possible. Possible future developments include in-cell metrology and integration with other instruments in the same platform.
{"title":"The future of 2D metrology for display manufacturing","authors":"T. Sandstrom, M. Wahlsten, Youngjin Park","doi":"10.1117/12.2248951","DOIUrl":"https://doi.org/10.1117/12.2248951","url":null,"abstract":"The race to 800 PPI and higher in mobile devices and the transition to OLED displays are driving a dramatic development of mask quality: resolution, CDU, registration, and complexity. 2D metrology for large area masks is necessary and must follow the roadmap. Driving forces in the market place point to continued development of even more dense displays. State-of-the-art metrology has proven itself capable of overlay below 40 nm and registration below 65 nm for G6 masks. Future developments include incoming and recurrent measurements of pellicalized masks at the panel maker’s factory site. Standardization of coordinate systems across supplier networks is feasible. This will enable better yield and production economy for both mask and panel maker. Better distortion correction methods will give better registration on the panels and relax the flatness requirements of the mask blanks. If panels are measured together with masks and the results are used to characterize the aligners, further quality and yield improvements are possible. Possible future developments include in-cell metrology and integration with other instruments in the same platform.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122315469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Michael Green, Y. Ham, Brian Dillon, B. Kasprowicz, Ikboum Hur, Joong Hee Park, Yohan Choi, J. McMurran, Henry H. Kamberian, D. Chalom, J. Klikovits, Michal Jurkovič, P. Hudek
As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking Sub-Resolution Assist Features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, we study one such process, characterizing mask manufacturing capability of 10nm and below structures with particular focus on minimum resolution and pattern fidelity.
{"title":"Mask manufacturing of advanced technology designs using multi-beam lithography (Part 1)","authors":"Michael Green, Y. Ham, Brian Dillon, B. Kasprowicz, Ikboum Hur, Joong Hee Park, Yohan Choi, J. McMurran, Henry H. Kamberian, D. Chalom, J. Klikovits, Michal Jurkovič, P. Hudek","doi":"10.1117/12.2247941","DOIUrl":"https://doi.org/10.1117/12.2247941","url":null,"abstract":"As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking Sub-Resolution Assist Features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, we study one such process, characterizing mask manufacturing capability of 10nm and below structures with particular focus on minimum resolution and pattern fidelity.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129404114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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