Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362018
J. Lloyd, J. A. Knight
A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.
{"title":"The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies","authors":"J. Lloyd, J. A. Knight","doi":"10.1109/IRPS.1984.362018","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362018","url":null,"abstract":"A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130483306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362029
N. Khurana
A Near Infra Red Microscope has been used to debug latch-up problems on CMOS products. The microscope is used to image the recombination radiaton emitted by the forward biased junctions in SCR latch-up. If latchup occurrs at one location it will spread like a cancer untill several sites have latched up. This causes the traditional heat sensing techniques to give incorrect results. Techniques were developed to view and understand the mechanisms which cause latch-up spreading. Various kinds of I/O latch-up modes have been studied and described.
{"title":"Pulsed Infra-Red Microscopy for Debugging Latch-Up on CMOS Products","authors":"N. Khurana","doi":"10.1109/IRPS.1984.362029","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362029","url":null,"abstract":"A Near Infra Red Microscope has been used to debug latch-up problems on CMOS products. The microscope is used to image the recombination radiaton emitted by the forward biased junctions in SCR latch-up. If latchup occurrs at one location it will spread like a cancer untill several sites have latched up. This causes the traditional heat sensing techniques to give incorrect results. Techniques were developed to view and understand the mechanisms which cause latch-up spreading. Various kinds of I/O latch-up modes have been studied and described.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127732126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362057
T. Burkett, R. Miller
Fail times and activation energies were determined to vary widely for different metal compositions. General results indicate that temperature, current density and grain size are the most dominant factors that affect electromigration behavior for the various metal compositions. The technique of using changes in metal stripe resistance to predict the time of failure was evaluated.
{"title":"Electromigration Evaluation - MTF Modeling and Accelerated Testing","authors":"T. Burkett, R. Miller","doi":"10.1109/IRPS.1984.362057","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362057","url":null,"abstract":"Fail times and activation energies were determined to vary widely for different metal compositions. General results indicate that temperature, current density and grain size are the most dominant factors that affect electromigration behavior for the various metal compositions. The technique of using changes in metal stripe resistance to predict the time of failure was evaluated.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130334840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362041
G. Walker, P. Dehaven
The importance of soldering in the semiconductor industry continues to grow as packages become denser, with the resultant increasing number of connections between chip and substrate. During soldering, intermetallic formation at interfaces and/or in the bulk of the solder can affect physical properties of the joint. We have found that initial stages of wetting control intermetallic formation, its dispersion in the solder and the solder's wetting characteristics.
{"title":"Initial Wetting and Reaction Sequences in Soldering","authors":"G. Walker, P. Dehaven","doi":"10.1109/IRPS.1984.362041","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362041","url":null,"abstract":"The importance of soldering in the semiconductor industry continues to grow as packages become denser, with the resultant increasing number of connections between chip and substrate. During soldering, intermetallic formation at interfaces and/or in the bulk of the solder can affect physical properties of the joint. We have found that initial stages of wetting control intermetallic formation, its dispersion in the solder and the solder's wetting characteristics.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133683238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362053
E. Levine, J. Kitcher
The mechanisms of electromigration open failure in quartz passivated Al-Cu interconnection lines were studied by interrupting the stress test at selected intervals and photographically recording the damage. In this way a semicontinuous record of the progressive damage build up to and including open failure has been obtained for a variety of stress conditions, passivation thickness, flat lines and these going over steep topography and interconnection lines with a thin Cr underlay. It is demonstrated that the predominant mechanism that controls open failure and its variation within the confines of the above variables is the dynamic behavior of voids and their interaction with the physical and geometrical structure of the line, which act as obstacles to void motion. It is further shown that during stress the physical structure of the line i.e. precipitate particles and grain size is also coarsening which in turn provides more effective obstacles to void motion. Open failure is caused by mobile void/obstacle interactions. With no passivation on the line, failure times are significantly reduced and dynamic void behavior is no longer present i.e. voids grow in place until an open occurs. Stable underlayers such as Cr, markedly increase the lifetime by temporarily supporting the current enabling both the dynamic healing process to more effectively come into play or supporting the void until it can move downstream into the larger bond pad.
{"title":"Electromigration Induced Damage and Structure Change in Cr-Al/Cu and Al/Cu Interconnection Lines","authors":"E. Levine, J. Kitcher","doi":"10.1109/IRPS.1984.362053","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362053","url":null,"abstract":"The mechanisms of electromigration open failure in quartz passivated Al-Cu interconnection lines were studied by interrupting the stress test at selected intervals and photographically recording the damage. In this way a semicontinuous record of the progressive damage build up to and including open failure has been obtained for a variety of stress conditions, passivation thickness, flat lines and these going over steep topography and interconnection lines with a thin Cr underlay. It is demonstrated that the predominant mechanism that controls open failure and its variation within the confines of the above variables is the dynamic behavior of voids and their interaction with the physical and geometrical structure of the line, which act as obstacles to void motion. It is further shown that during stress the physical structure of the line i.e. precipitate particles and grain size is also coarsening which in turn provides more effective obstacles to void motion. Open failure is caused by mobile void/obstacle interactions. With no passivation on the line, failure times are significantly reduced and dynamic void behavior is no longer present i.e. voids grow in place until an open occurs. Stable underlayers such as Cr, markedly increase the lifetime by temporarily supporting the current enabling both the dynamic healing process to more effectively come into play or supporting the void until it can move downstream into the larger bond pad.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123135043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362059
A. Ito, E. W. George, R. Lowry, H. A. Swasey
This paper is presented to further the understanding of the physics of programming polysilicon fuses. One and two dimensional models have been developed to understand the fusing event and predict the fusing time and power relationship. The predicted fusibility (fusing time and power dependence) is shown to be in good agreement with the experimental data.
{"title":"The Physics and Reliability of Fusing Polysilicon","authors":"A. Ito, E. W. George, R. Lowry, H. A. Swasey","doi":"10.1109/IRPS.1984.362059","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362059","url":null,"abstract":"This paper is presented to further the understanding of the physics of programming polysilicon fuses. One and two dimensional models have been developed to understand the fusing event and predict the fusing time and power relationship. The predicted fusibility (fusing time and power dependence) is shown to be in good agreement with the experimental data.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120944869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362048
R. Narechania, J. Bruce, Cherie A. Beach
The effects of surface treatment and cure temperatures on polyimide to silicon nitride adhesion strength are discussed. Results show the importance of surface cleanliness and the requirements for an adhesion promoter. Understanding the temperature cure to a polyimide adhesion strength at a nitride interface is also important.
{"title":"Polyimide Adhesion Characteristics","authors":"R. Narechania, J. Bruce, Cherie A. Beach","doi":"10.1109/IRPS.1984.362048","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362048","url":null,"abstract":"The effects of surface treatment and cure temperatures on polyimide to silicon nitride adhesion strength are discussed. Results show the importance of surface cleanliness and the requirements for an adhesion promoter. Understanding the temperature cure to a polyimide adhesion strength at a nitride interface is also important.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121518736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/irps.1984.362060
D. Dening, D. Lacombe, A. Christou
{"title":"Reliability of High Temperature I2L Integrated Circuits","authors":"D. Dening, D. Lacombe, A. Christou","doi":"10.1109/irps.1984.362060","DOIUrl":"https://doi.org/10.1109/irps.1984.362060","url":null,"abstract":"","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125869640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/irps.1984.362061
T. May, G. Scott, E. S. Meieran, P. Winer, V. Rao
A technique is described for acquiring and imaging faults in random logic devices such as microprocessors and other VLSI chips. Logic states for both faulty and fault-free devices are imaged separately by means of stroboscopic voltage contrast in a scanning electron microscope and are then stored as incremental time sequences of images. These sequences represent the time evolution of states during a particular device test and are then compared in an image array processor. The divergences or changes between the faulty and fault-free device evolutions represent faults, which are then displayed on a color monitor. The architecture and implementation of the Dynamic Fault Imager is described. Several examples using highly-integrated microprocessors are given, including the imaging of functional failures, voltage marginalities, and critical speed path mapping. A partial classification of faults is presented, as well as a discussion of future trends. The technique appears to have wide application to solving problems in the design and manufacturing of future VLSI devices.
{"title":"Dynamic Fault Imaging of VLSI Random Logic Devices","authors":"T. May, G. Scott, E. S. Meieran, P. Winer, V. Rao","doi":"10.1109/irps.1984.362061","DOIUrl":"https://doi.org/10.1109/irps.1984.362061","url":null,"abstract":"A technique is described for acquiring and imaging faults in random logic devices such as microprocessors and other VLSI chips. Logic states for both faulty and fault-free devices are imaged separately by means of stroboscopic voltage contrast in a scanning electron microscope and are then stored as incremental time sequences of images. These sequences represent the time evolution of states during a particular device test and are then compared in an image array processor. The divergences or changes between the faulty and fault-free device evolutions represent faults, which are then displayed on a color monitor. The architecture and implementation of the Dynamic Fault Imager is described. Several examples using highly-integrated microprocessors are given, including the imaging of functional failures, voltage marginalities, and critical speed path mapping. A partial classification of faults is presented, as well as a discussion of future trends. The technique appears to have wide application to solving problems in the design and manufacturing of future VLSI devices.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131610110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/irps.1984.362015
A. Ito, E. W. George, R. Lowry, H. A. Swasey
This paper is presented to further the understanding of the physics of programming polysilicon fuses. One and two dimensional models have been developed to understand the fusing event and predict the fusing time and power relationship. The predicted fusibility (fusing time and power dependence) is shown to be in good agreement with the experimental data.
{"title":"The Physics and Reliability of Fusing Polysilicon","authors":"A. Ito, E. W. George, R. Lowry, H. A. Swasey","doi":"10.1109/irps.1984.362015","DOIUrl":"https://doi.org/10.1109/irps.1984.362015","url":null,"abstract":"This paper is presented to further the understanding of the physics of programming polysilicon fuses. One and two dimensional models have been developed to understand the fusing event and predict the fusing time and power relationship. The predicted fusibility (fusing time and power dependence) is shown to be in good agreement with the experimental data.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"15 30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124255632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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