Pub Date : 1984-04-03DOI: 10.1109/IRPS.1984.362047
I. Eisele, P. Vitanov, F. Fischer, U. Schwabe
For scaled Mos devices long term reliability of the turn-on voltage is important. Longterm stability of the turn-on voltage has been measured under stress aging for 2000 h (T=150°C. E=2.5×106V/cm). Generation of interface traps without essential flatband shift is observed. Despite that, positive turn-on voltage shift appears for effective channel lengths L<2.0¿m. The stress measurements have been performed on multitransistor structures which permit to measure interface traps, threshold voltage, and feature sizes on the same test structure. The relationship between the turn-on voltage shift and the interface trap density is discussed with respect to the effective channel length.
对于规模化Mos器件，导通电压的长期可靠性非常重要。在应力老化2000 h (T=150℃)下，测量了导通电压的长期稳定性。E = 2.5×106 v /厘米)。产生的界面陷阱没有必要的平带移位观察。尽管如此，当有效通道长度L<2.0¿m时，出现正的导通电压移位。应力测量已在多晶体管结构上进行，该结构允许在同一测试结构上测量界面陷阱、阈值电压和特征尺寸。从有效通道长度的角度讨论了导通电压位移与界面阱密度之间的关系。
{"title":"Turn-On Voltage Degradation of Short Channel MOSFETs Due to Generation of Interface States","authors":"I. Eisele, P. Vitanov, F. Fischer, U. Schwabe","doi":"10.1109/IRPS.1984.362047","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362047","url":null,"abstract":"For scaled Mos devices long term reliability of the turn-on voltage is important. Longterm stability of the turn-on voltage has been measured under stress aging for 2000 h (T=150°C. E=2.5×106V/cm). Generation of interface traps without essential flatband shift is observed. Despite that, positive turn-on voltage shift appears for effective channel lengths L<2.0¿m. The stress measurements have been performed on multitransistor structures which permit to measure interface traps, threshold voltage, and feature sizes on the same test structure. The relationship between the turn-on voltage shift and the interface trap density is discussed with respect to the effective channel length.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130881872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-03DOI: 10.1109/IRPS.1984.362050
G. Digiacomo
The diffusion of phosphorus through chip glass passivation is studied at various temperatures and water vapor pressures. The phosphorus diffuses from the phosphosilicate glass (PSG) to the glass surface through defects. It is detected by electron microprobe at low accelerating potential (3¿ kV) to avoid excitation of the underlying PSG. The amount of phosphorus transported varies proportionally to the water vapor pressure with an activation energy of 0.32 eV.
{"title":"Phosphorus Migration Kinetics from PSG to Glass Passivation Surface","authors":"G. Digiacomo","doi":"10.1109/IRPS.1984.362050","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362050","url":null,"abstract":"The diffusion of phosphorus through chip glass passivation is studied at various temperatures and water vapor pressures. The phosphorus diffuses from the phosphosilicate glass (PSG) to the glass surface through defects. It is detected by electron microprobe at low accelerating potential (3¿ kV) to avoid excitation of the underlying PSG. The amount of phosphorus transported varies proportionally to the water vapor pressure with an activation energy of 0.32 eV.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126048336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362021
T. Shiragasawa, H. Shimura, K. Kagawa, T. Yonezawa, M. Noyori
In order to quantitatively evaluate latch-up sensitivity on scaled CMOS LSIs, an advanced latch-up analyzer with a laser scanner has been developed. As a result of the application of the analyzer to a 64K bit full CMOS static RAM, the analyzer was found to be very useful in latch-up evaluation on CMOS LSIs. Furthermore, high sensitivity regions in the memory cell and a sensitivity distribution in the memory array block, which depend on pattern layout, have been clearly observed on the static RAM.
{"title":"Latch-Up Analysis on a 64K Bit Full CMOS Static RAM using a Laser Scanner","authors":"T. Shiragasawa, H. Shimura, K. Kagawa, T. Yonezawa, M. Noyori","doi":"10.1109/IRPS.1984.362021","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362021","url":null,"abstract":"In order to quantitatively evaluate latch-up sensitivity on scaled CMOS LSIs, an advanced latch-up analyzer with a laser scanner has been developed. As a result of the application of the analyzer to a 64K bit full CMOS static RAM, the analyzer was found to be very useful in latch-up evaluation on CMOS LSIs. Furthermore, high sensitivity regions in the memory cell and a sensitivity distribution in the memory array block, which depend on pattern layout, have been clearly observed on the static RAM.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125947435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362034
M. Hirayama, T. Matsukawa, N. Tsubouchi, H. Nakata
Time dependent dielectric breakdown characteristics of the thin silicon dioxide films were automatically measured. These films were obtained from the high pressure low temperature oxidation of silicon. Breakdown failures were independent on the oxidation pressure but dependent on the oxidation temperature and film thickness. The electric field acceleration factor is estimated about 105.6/MV/cm.
{"title":"Time Dependent Dielectric Breakdown Measurement of High Pressure Low Temperature Oxidized Film","authors":"M. Hirayama, T. Matsukawa, N. Tsubouchi, H. Nakata","doi":"10.1109/IRPS.1984.362034","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362034","url":null,"abstract":"Time dependent dielectric breakdown characteristics of the thin silicon dioxide films were automatically measured. These films were obtained from the high pressure low temperature oxidation of silicon. Breakdown failures were independent on the oxidation pressure but dependent on the oxidation temperature and film thickness. The electric field acceleration factor is estimated about 105.6/MV/cm.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"312 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122773029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362044
T. Watanabe, H. Ishiuchi, T. Tanaka, T. Mochizuki, O. Ozawa
Oxide leakage currents of silicide gate MOSFET's have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.
{"title":"Mechanism of Oxide Leakage Current of Silicide Gate MOSFET's","authors":"T. Watanabe, H. Ishiuchi, T. Tanaka, T. Mochizuki, O. Ozawa","doi":"10.1109/IRPS.1984.362044","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362044","url":null,"abstract":"Oxide leakage currents of silicide gate MOSFET's have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129787089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362019
H. Grubin, W. Anderson, A. Christou
A two-dimensional transient numerical study of failure mechanisms in gallium arsenide transferred electron devices was undertaken. The simulation, which incorporates the effects of elevated temperature operation, mobility and donor density variations was designed to assess these contributions on device operation and reliability. The results of the study are consistent with a previously proposed reliability model and are discussed below.
{"title":"Theoretical and Experimental Studies of Failure Mechanisms in Gallium Arsenide Three-Terminal Transferred Electron Devices","authors":"H. Grubin, W. Anderson, A. Christou","doi":"10.1109/IRPS.1984.362019","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362019","url":null,"abstract":"A two-dimensional transient numerical study of failure mechanisms in gallium arsenide transferred electron devices was undertaken. The simulation, which incorporates the effects of elevated temperature operation, mobility and donor density variations was designed to assess these contributions on device operation and reliability. The results of the study are consistent with a previously proposed reliability model and are discussed below.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"49 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128835223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362027
D. Wendell, D. Segers, Billy Wang
Long-term integrity and stability of oxides is of prime concern in MOS reliability. This paper presents a test method for the in-situ prediction of thin film thermal oxide failure rates. The method is correlated with standard accelerated device studies.
{"title":"Predicting Oxide Failure Rates using the Matrix of a 64K DRAM Chip","authors":"D. Wendell, D. Segers, Billy Wang","doi":"10.1109/IRPS.1984.362027","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362027","url":null,"abstract":"Long-term integrity and stability of oxides is of prime concern in MOS reliability. This paper presents a test method for the in-situ prediction of thin film thermal oxide failure rates. The method is correlated with standard accelerated device studies.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117202596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362056
P. Merchant, T. Cass
Al-Cu films, obtained from several sputter deposition processes have been subjected to accelerated electromigration life tests. The resultant median times to failure (ranging from 15-1600 h) have been compared with the microstructure and alloy distributions in the films as measured by He backscattering spectroscopy, transmission electron microscopy and diffraction and X-ray diffraction. We conclude that the film texture and location of copper in the films have a strong influence on their electromigration resistance.
{"title":"Comparative Electromigration Tests of Al-Cu Alloys","authors":"P. Merchant, T. Cass","doi":"10.1109/IRPS.1984.362056","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362056","url":null,"abstract":"Al-Cu films, obtained from several sputter deposition processes have been subjected to accelerated electromigration life tests. The resultant median times to failure (ranging from 15-1600 h) have been compared with the microstructure and alloy distributions in the films as measured by He backscattering spectroscopy, transmission electron microscopy and diffraction and X-ray diffraction. We conclude that the film texture and location of copper in the films have a strong influence on their electromigration resistance.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132147970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362032
M. Shatzkes, M. Av-Ron, K. Srikrishnan
Ramped voltage breakdown experiments were used to derive the dependence of life-time, ¿(v), on the applied voltage for Ta2O5-Si3N4 dual dielectric capacitors. Techniques previously described allowed for recognition of defective capacitors, which break down early, and for the effect of trapping of injected carriers, which retards the breakdown. It is there. ore possible to determine ¿(v) for charge-free nondefective capacitors--a quantity of interest for reliability. For nonoptimistic reliability projections, ¿(v) must be obtained over a range in voltage so that log ¿(v) versus v exhibits, at the lower portion of that range, an upward concavity. Projections thus obtained were verified in a life-test.
用斜电压击穿实验推导了Ta2O5-Si3N4双介质电容器寿命¿(v)与外加电压的关系。先前描述的技术允许识别早期击穿的缺陷电容器，以及捕获注入载流子的效果，这延缓了击穿。它就在那里。有可能确定无电荷无缺陷电容器的¿(v) -可靠性的兴趣量。对于非乐观可靠性预测，必须在电压范围内获得¿(v)，以便在该范围的较低部分，log¿(v) vs . v呈现向上的凹度。这样得到的投影在寿命试验中得到了验证。
{"title":"Determination of Reliability from Ramped Voltage Breakdown Experiments; Application to Dual Dielectric MIM Capacitors","authors":"M. Shatzkes, M. Av-Ron, K. Srikrishnan","doi":"10.1109/IRPS.1984.362032","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362032","url":null,"abstract":"Ramped voltage breakdown experiments were used to derive the dependence of life-time, ¿(v), on the applied voltage for Ta2O5-Si3N4 dual dielectric capacitors. Techniques previously described allowed for recognition of defective capacitors, which break down early, and for the effect of trapping of injected carriers, which retards the breakdown. It is there. ore possible to determine ¿(v) for charge-free nondefective capacitors--a quantity of interest for reliability. For nonoptimistic reliability projections, ¿(v) must be obtained over a range in voltage so that log ¿(v) versus v exhibits, at the lower portion of that range, an upward concavity. Projections thus obtained were verified in a life-test.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114202439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1984-04-01DOI: 10.1109/IRPS.1984.362023
D. J. Burns, Mark T. Pronobis, C. Eldering, Robert J. Hillman
A new device analysis technique is discussed which may prove useful in characterizing critical timing paths and analyzing timing related failure modes in high clock rate VLSI circuits. A focussed laser is used to inject localized photocurrent at the drain of a single transistor as the device is tested. The resulting effects on circuit performance have been studied and it is shown that individual circuit path propagation delays can be increased in this manner. To assign a relative value to a measurement, the operating frequency, power supply voltage or injected photocurrent level can be varied with the others fixed until the device just fails. Models, circuit simulations and experimental results obtained using this technique on a simple gate and results measured on CMOS microprocessors are given in this paper. Possible applications of the technique beyond the analysis of frequency sensitive failures include experimentally locating performance limiting timing paths in a circuit and assessing a circuit's sensitivity to process or failure mechanism induced drifts in device parameters which affect timing.
{"title":"Reliability/Design Assessment by Internal-Node Timing-Margin Analysis using Laser Photocurrent-Injection","authors":"D. J. Burns, Mark T. Pronobis, C. Eldering, Robert J. Hillman","doi":"10.1109/IRPS.1984.362023","DOIUrl":"https://doi.org/10.1109/IRPS.1984.362023","url":null,"abstract":"A new device analysis technique is discussed which may prove useful in characterizing critical timing paths and analyzing timing related failure modes in high clock rate VLSI circuits. A focussed laser is used to inject localized photocurrent at the drain of a single transistor as the device is tested. The resulting effects on circuit performance have been studied and it is shown that individual circuit path propagation delays can be increased in this manner. To assign a relative value to a measurement, the operating frequency, power supply voltage or injected photocurrent level can be varied with the others fixed until the device just fails. Models, circuit simulations and experimental results obtained using this technique on a simple gate and results measured on CMOS microprocessors are given in this paper. Possible applications of the technique beyond the analysis of frequency sensitive failures include experimentally locating performance limiting timing paths in a circuit and assessing a circuit's sensitivity to process or failure mechanism induced drifts in device parameters which affect timing.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123485107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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