We report an advance in photoreceiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors (HEMTs) and metal-semiconductor-metal (MSM) photodetectors in the design of a 1.55 /spl mu/m sensitive high-speed, monolithically integrated lightwave receiver.
{"title":"A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver","authors":"P. Fay, W. Wohlmuth, C. Caneau, I. Adesida","doi":"10.1109/DRC.1995.496275","DOIUrl":"https://doi.org/10.1109/DRC.1995.496275","url":null,"abstract":"We report an advance in photoreceiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors (HEMTs) and metal-semiconductor-metal (MSM) photodetectors in the design of a 1.55 /spl mu/m sensitive high-speed, monolithically integrated lightwave receiver.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128120084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Simulating the function of biological retina using electronic hardware is the future trend for intelligent electronics. It is believed that the first three features that a biological visual system extracts from an object image are edge position, edge orientation and angle position. The contrast edge position of an object and its orientation with respect to the horizontal line can be measured from the active hollow FOur QUadrant Orientation Detector (FOQUOD). Based on this device, a double FOQUOD device which can extract the angle position is proposed for the first time and has been fabricated successfully. The a-Si:H angle position detector is composed of two hollow FOQUODs packed in a concentric fashion and each FOQUOD consists of four a-Si:H p-i-n solar cells.
{"title":"A novel angle position detector for application to pattern recognition","authors":"K. Lin, Si-Chen Lee","doi":"10.1109/DRC.1995.496274","DOIUrl":"https://doi.org/10.1109/DRC.1995.496274","url":null,"abstract":"Simulating the function of biological retina using electronic hardware is the future trend for intelligent electronics. It is believed that the first three features that a biological visual system extracts from an object image are edge position, edge orientation and angle position. The contrast edge position of an object and its orientation with respect to the horizontal line can be measured from the active hollow FOur QUadrant Orientation Detector (FOQUOD). Based on this device, a double FOQUOD device which can extract the angle position is proposed for the first time and has been fabricated successfully. The a-Si:H angle position detector is composed of two hollow FOQUODs packed in a concentric fashion and each FOQUOD consists of four a-Si:H p-i-n solar cells.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125555005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We proposed counter doping into a heavily and uniformly doped channel region of SOI MOSFETs. This enabled us to suppress the short channel effects with proper threshold voltage V/sub th/, and to eliminate parasitic edge or back gate transistors. We derived a model for V/sub th/, as a function of the projected range, R/sub p/ and dose, /spl Phi//sub D/, of the counter doping and showed that V/sub th/ is invariable even when the as-implanted counter doping profile redistributes. Using this technology, we demonstrated a V/sub th/ roll-off free 0.075 /spl mu/m-L/sub Geff/ nMOSFET with low off-state current.
{"title":"Sub 0.1 /spl mu/m SOI MOSFETs with counter doping into uniformly and heavily doped channel region","authors":"K. Suzuki, A. Satoh, T. Sugii","doi":"10.1109/DRC.1995.496228","DOIUrl":"https://doi.org/10.1109/DRC.1995.496228","url":null,"abstract":"We proposed counter doping into a heavily and uniformly doped channel region of SOI MOSFETs. This enabled us to suppress the short channel effects with proper threshold voltage V/sub th/, and to eliminate parasitic edge or back gate transistors. We derived a model for V/sub th/, as a function of the projected range, R/sub p/ and dose, /spl Phi//sub D/, of the counter doping and showed that V/sub th/ is invariable even when the as-implanted counter doping profile redistributes. Using this technology, we demonstrated a V/sub th/ roll-off free 0.075 /spl mu/m-L/sub Geff/ nMOSFET with low off-state current.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117194270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Compound semiconductor FETs have begun to be used for applications which need high-speed and high-voltage operation. It becomes very important to reduce threshold-voltage change with respect to drain voltage in such applications requiring large amplitude outputs. For high-voltage operation, important results on gate breakdown and on I-V kinks have been obtained using two-dimensional device simulations. However, threshold-voltage change has not been investigated fully. In this study, we analyze the effect of surface trap levels on threshold-voltage change. We used 0.3-micron gate doped-channel heterostructure insulated-gate FETs in this study.
{"title":"Effect of surface-trap levels on threshold-voltage change in GaAs FETs","authors":"O. Kagaya, H. Takazawa","doi":"10.1109/DRC.1995.496237","DOIUrl":"https://doi.org/10.1109/DRC.1995.496237","url":null,"abstract":"Compound semiconductor FETs have begun to be used for applications which need high-speed and high-voltage operation. It becomes very important to reduce threshold-voltage change with respect to drain voltage in such applications requiring large amplitude outputs. For high-voltage operation, important results on gate breakdown and on I-V kinks have been obtained using two-dimensional device simulations. However, threshold-voltage change has not been investigated fully. In this study, we analyze the effect of surface trap levels on threshold-voltage change. We used 0.3-micron gate doped-channel heterostructure insulated-gate FETs in this study.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115176142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, we present the experimental results of a 130 unit GaAs/AlGaAs quantum well infrared detector line-array with front-side normal illumination based on a waveguide of a doubly periodic grating coupler. The detector array has achieved a broad spectral response by optimizing the quantum well structures and device processes.
{"title":"Investigation of GaAs/AlGaAs multiquantum well infrared detector","authors":"Jinmin Li, Haiqun Zheng, Yiping Zeng, M. Kong","doi":"10.1109/DRC.1995.496297","DOIUrl":"https://doi.org/10.1109/DRC.1995.496297","url":null,"abstract":"In this article, we present the experimental results of a 130 unit GaAs/AlGaAs quantum well infrared detector line-array with front-side normal illumination based on a waveguide of a doubly periodic grating coupler. The detector array has achieved a broad spectral response by optimizing the quantum well structures and device processes.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"73 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123075502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. Device performance of IGBT's has been improved rapidly in recent years, particularly regarding the trade-off between its on-state voltage and switching loss. Another important performance trade-off is between its on-state voltage and short-circuit withstanding capability. A short-circuit condition occurs when an IGBT is fully turned on and the collector-emitter voltage remains high. Since the IGBT experiences both high current and voltage simultaneously, the power dissipation becomes excessive even during a short time period. The IGBT may be destroyed through a latch-up failure mode or simply due to the excessive heat generated in the device. In this paper, a new IGBT structure with emitter ballast resistor is investigated to improve the trade-off between the on-state voltage and the short circuit withstanding capability. IGBTs with voltage and current ratings of 600 V and 5 A have been designed and fabricated to conduct this study. The IGBTs demonstrate excellent switching speed with a typical turn-off fall time of 150 ns. The 3-dimensional semiconductor device simulator DAVINCI is used to model this new design. Both experimental and simulation results are discussed.
{"title":"Design and modeling of the 600 V IGBT with emitter ballast resistor","authors":"Z. Shen, S. P. Robb","doi":"10.1109/DRC.1995.496292","DOIUrl":"https://doi.org/10.1109/DRC.1995.496292","url":null,"abstract":"Summary form only given. Device performance of IGBT's has been improved rapidly in recent years, particularly regarding the trade-off between its on-state voltage and switching loss. Another important performance trade-off is between its on-state voltage and short-circuit withstanding capability. A short-circuit condition occurs when an IGBT is fully turned on and the collector-emitter voltage remains high. Since the IGBT experiences both high current and voltage simultaneously, the power dissipation becomes excessive even during a short time period. The IGBT may be destroyed through a latch-up failure mode or simply due to the excessive heat generated in the device. In this paper, a new IGBT structure with emitter ballast resistor is investigated to improve the trade-off between the on-state voltage and the short circuit withstanding capability. IGBTs with voltage and current ratings of 600 V and 5 A have been designed and fabricated to conduct this study. The IGBTs demonstrate excellent switching speed with a typical turn-off fall time of 150 ns. The 3-dimensional semiconductor device simulator DAVINCI is used to model this new design. Both experimental and simulation results are discussed.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131491653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Field effect transistors (FETs) made from InAs/AlSb quantum wells have demonstrated excellent microwave performance ( fi = 93Ghz for a 0.5/spl mu/m gate length). However, a serious fundamental problem has plagued even our best InAs/A1Sb devices (and others reported in the literature): almost all devices show very poor drain I-V characteristics, with undesirably high drain conductances that increase rapidly with increasing drain voltage, leading to a pronounced turnup at very low voltages. The purpose of the present work is to demonstrate that the enhancement in drain conductance is caused by a feedback mechanism initiated by holes generated during the impact ionization of hot electrons in the InAs channel.
{"title":"Impact ionization in InAs/AlSb field effect transistors","authors":"B. Brar, H. Kroemer","doi":"10.1109/DRC.1995.496235","DOIUrl":"https://doi.org/10.1109/DRC.1995.496235","url":null,"abstract":"Field effect transistors (FETs) made from InAs/AlSb quantum wells have demonstrated excellent microwave performance ( fi = 93Ghz for a 0.5/spl mu/m gate length). However, a serious fundamental problem has plagued even our best InAs/A1Sb devices (and others reported in the literature): almost all devices show very poor drain I-V characteristics, with undesirably high drain conductances that increase rapidly with increasing drain voltage, leading to a pronounced turnup at very low voltages. The purpose of the present work is to demonstrate that the enhancement in drain conductance is caused by a feedback mechanism initiated by holes generated during the impact ionization of hot electrons in the InAs channel.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"308 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132980290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Tanimoto, S. Tanaka, I. Ohbu, H. Matsumoto, T. Nakamura
Dual-gate FETs with higher output impedance have been developed for ultra-high efficiency mobile communication high power amplifiers (HPAs). These FETs have a large linear gain (22 dB) and maximum power-added efficiency (PAE) of 78%, almost twice that of single-gate FETs. They operate with a 3-V supply voltage at 1.9 GHz.
{"title":"Dual-gate FETs for ultra-high efficiency HPA","authors":"T. Tanimoto, S. Tanaka, I. Ohbu, H. Matsumoto, T. Nakamura","doi":"10.1109/DRC.1995.496238","DOIUrl":"https://doi.org/10.1109/DRC.1995.496238","url":null,"abstract":"Dual-gate FETs with higher output impedance have been developed for ultra-high efficiency mobile communication high power amplifiers (HPAs). These FETs have a large linear gain (22 dB) and maximum power-added efficiency (PAE) of 78%, almost twice that of single-gate FETs. They operate with a 3-V supply voltage at 1.9 GHz.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133097465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Allen, J. Palmour, V. Tsvetkov, S. Macko, C. Carter, C. Weitzel, K. Moore, K. Nordquist, L. Pond
MESFET's fabricated on high resistivity 4H-SiC substrates have attained an f/sub max/ of 30.5 GHz and an f/sub /spl tau// of 14.0 GHz. Both of these figures of merit are the highest ever reported for a SiC MESFET, and this is the first report of high resistivity 4H-SiC substrates. With the continued advances in bulk crystal growth, including the availability of high resistivity material, the development of two-inch substrates and the reduction of micropipe defect densities to <30 cm/sup -2/, SiC is rapidly emerging as a viable technology for high power microwave applications.
{"title":"4H-SiC MESFET's on high resistivity substrates with 30 GHz f/sub max/","authors":"S. Allen, J. Palmour, V. Tsvetkov, S. Macko, C. Carter, C. Weitzel, K. Moore, K. Nordquist, L. Pond","doi":"10.1109/DRC.1995.496289","DOIUrl":"https://doi.org/10.1109/DRC.1995.496289","url":null,"abstract":"MESFET's fabricated on high resistivity 4H-SiC substrates have attained an f/sub max/ of 30.5 GHz and an f/sub /spl tau// of 14.0 GHz. Both of these figures of merit are the highest ever reported for a SiC MESFET, and this is the first report of high resistivity 4H-SiC substrates. With the continued advances in bulk crystal growth, including the availability of high resistivity material, the development of two-inch substrates and the reduction of micropipe defect densities to <30 cm/sup -2/, SiC is rapidly emerging as a viable technology for high power microwave applications.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133565532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gerhard Klimeck, R. Lake, R. Bowen, W. Frensley, D. Blanks
The design of resonant tunneling based quantum devices requires accurate modeling of the quantum charge, resonant levels, and scattering effects in extremely complicated and varied potential profiles made possible by the great flexibility of heteroepitaxial based band engineering. Until now, such a device simulator did not exist. We unveil an alpha version of such a tool. It is planned for this tool to become available to the national R&D community. The tool solves the non-equilibrium Green function equations including realistic models for the important scattering mechanisms.
{"title":"Nano electronic modelling (NEMO)","authors":"Gerhard Klimeck, R. Lake, R. Bowen, W. Frensley, D. Blanks","doi":"10.1109/DRC.1995.496267","DOIUrl":"https://doi.org/10.1109/DRC.1995.496267","url":null,"abstract":"The design of resonant tunneling based quantum devices requires accurate modeling of the quantum charge, resonant levels, and scattering effects in extremely complicated and varied potential profiles made possible by the great flexibility of heteroepitaxial based band engineering. Until now, such a device simulator did not exist. We unveil an alpha version of such a tool. It is planned for this tool to become available to the national R&D community. The tool solves the non-equilibrium Green function equations including realistic models for the important scattering mechanisms.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133646334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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