Progress in higher level integration in digital CMOS technology has led to the implementation of mixed mode analog/digital circuit functions on the same chip. In order to fully realize the potential of analog applications of MOS FETs processed with digital technology, the impact of digital fabrication technology on device analog performance has to be examined. One of the essential processing issues is the plasma etching induced gate oxide damage, which affects MOSFET threshold voltage and 1/f noise. The 1/f noise is known to affect broad band circuit design and its intensity poses a limit on input signal level, which will be further reduced in low power electronics. To alleviate the design constraints imposed by MOSFET noise, it is essential to examine the 1/f noise characteristics affected by the device design. In this paper, we report such an investigation, illustrating that the noise dependence on channel length, metal interconnect perimeter length, and gate bias needs to be taken into consideration for analog circuit design.
{"title":"Low frequency noise consideration for MOSFET analog circuits","authors":"Chun Hu, G. Li","doi":"10.1109/DRC.1995.496230","DOIUrl":"https://doi.org/10.1109/DRC.1995.496230","url":null,"abstract":"Progress in higher level integration in digital CMOS technology has led to the implementation of mixed mode analog/digital circuit functions on the same chip. In order to fully realize the potential of analog applications of MOS FETs processed with digital technology, the impact of digital fabrication technology on device analog performance has to be examined. One of the essential processing issues is the plasma etching induced gate oxide damage, which affects MOSFET threshold voltage and 1/f noise. The 1/f noise is known to affect broad band circuit design and its intensity poses a limit on input signal level, which will be further reduced in low power electronics. To alleviate the design constraints imposed by MOSFET noise, it is essential to examine the 1/f noise characteristics affected by the device design. In this paper, we report such an investigation, illustrating that the noise dependence on channel length, metal interconnect perimeter length, and gate bias needs to be taken into consideration for analog circuit design.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126982359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bolometric infrared sensors using integrated thermoelements for temperature detection and membrane structures for thermal isolation of the absorber are passive devices for highly sensitive remote temperature measurements. With the typical broad banded response to infrared radiation this device has a wide area of applications. We used the GaAs/AlGaAs material system for this purpose as its material parameters show advantages in terms of sensor performance and technology.
{"title":"Free-standing Al/sub 0.30/Ga/sub 0.70/As thermopile infrared sensor","authors":"A. Dehé, H. Hartnagel","doi":"10.1109/DRC.1995.496295","DOIUrl":"https://doi.org/10.1109/DRC.1995.496295","url":null,"abstract":"Bolometric infrared sensors using integrated thermoelements for temperature detection and membrane structures for thermal isolation of the absorber are passive devices for highly sensitive remote temperature measurements. With the typical broad banded response to infrared radiation this device has a wide area of applications. We used the GaAs/AlGaAs material system for this purpose as its material parameters show advantages in terms of sensor performance and technology.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127750335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Anselm, S. Murtaza, I. Tan, R.V. Chelakara, M.R. Islam, R. Dupuis, B. Streetman, J. Bowers, E. Hu, J. Campbell
Resonant-cavity photodetectors (RECAPs) can circumvent the tradeoff between quantum efficiency and bandwidth that can limit the performance of conventional photodiode structures. For example, a Si-based RECAP has achieved 65% external quantum efficiency with almost 10x improvement in bandwidth compared to commercially-available Si p-i-n photodiodes. In addition, the wavelength selective spectral response offers potential advantages for applications where filtering is needed such as wavelength division multiplexing (WDM). In this paper, we demonstrate, for the first time, a resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiode (APD). The motivation for using the SAM-APD structure is to achieve single carrier injection into the multiplication region and thus obtain low excess multiplication noise. We also demonstrate a long-wavelength, resonant-cavity photodetector that exhibits a high quantum efficiency and the narrowest spectral-linewidth reported to date.
{"title":"High-performance resonant-cavity photodetectors","authors":"K. Anselm, S. Murtaza, I. Tan, R.V. Chelakara, M.R. Islam, R. Dupuis, B. Streetman, J. Bowers, E. Hu, J. Campbell","doi":"10.1109/DRC.1995.496272","DOIUrl":"https://doi.org/10.1109/DRC.1995.496272","url":null,"abstract":"Resonant-cavity photodetectors (RECAPs) can circumvent the tradeoff between quantum efficiency and bandwidth that can limit the performance of conventional photodiode structures. For example, a Si-based RECAP has achieved 65% external quantum efficiency with almost 10x improvement in bandwidth compared to commercially-available Si p-i-n photodiodes. In addition, the wavelength selective spectral response offers potential advantages for applications where filtering is needed such as wavelength division multiplexing (WDM). In this paper, we demonstrate, for the first time, a resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiode (APD). The motivation for using the SAM-APD structure is to achieve single carrier injection into the multiplication region and thus obtain low excess multiplication noise. We also demonstrate a long-wavelength, resonant-cavity photodetector that exhibits a high quantum efficiency and the narrowest spectral-linewidth reported to date.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121661906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Siergiej, A. Agarwal, W. E. Wagner, M. White, C. Brandt, M. Driver, R. Hopkins
Silicon Carbide (SiC) has enjoyed rapid success in discrete device development primarily due to the availability of single crystal wafers and the similarities which exist with present day silicon technologies. Some of the devices which have been fabricated in SiC include the MOSFET, MESFET, thyristor, JFET, and UMOS. Additionally some devices, such as MOSFETs and MESFETs, have been utilized in integrated form to demonstrate digital and analog circuitry. However, the MOS devices used in integrated circuits have all been of one type, either enhancement or depletion. It is the purpose of the present study to investigate an integrated circuit technology which provides both enhancement and depletion mode NMOS transistors. This type of circuit technology is desirable for high-density circuit integration schemes since it consumes less area than an all enhancement or depletion mode design.
{"title":"Novel SiC device technology featuring enhancement and depletion mode transistors","authors":"R. Siergiej, A. Agarwal, W. E. Wagner, M. White, C. Brandt, M. Driver, R. Hopkins","doi":"10.1109/DRC.1995.496287","DOIUrl":"https://doi.org/10.1109/DRC.1995.496287","url":null,"abstract":"Silicon Carbide (SiC) has enjoyed rapid success in discrete device development primarily due to the availability of single crystal wafers and the similarities which exist with present day silicon technologies. Some of the devices which have been fabricated in SiC include the MOSFET, MESFET, thyristor, JFET, and UMOS. Additionally some devices, such as MOSFETs and MESFETs, have been utilized in integrated form to demonstrate digital and analog circuitry. However, the MOS devices used in integrated circuits have all been of one type, either enhancement or depletion. It is the purpose of the present study to investigate an integrated circuit technology which provides both enhancement and depletion mode NMOS transistors. This type of circuit technology is desirable for high-density circuit integration schemes since it consumes less area than an all enhancement or depletion mode design.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125550759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. A constant-current driven semiconductor laser has a sub-Poissonian internal pump noise and thus produces a number-phase squeezed state instead of a coherent state. The measured photon number (intensity) noise was -8.6 dB below the shot noise value. The authors review the principle and the potential applications of squeezed state generation by semiconductor lasers. They discuss control of spontaneous emission in a semiconductor laser. Spontaneous emission in not an immutable property of an atom but is a consequence of atom-vacuum field (quantum mechanical zero-point fluctuation) coupling. If the intensity of a vacuum field fluctuation is modified by a cavity wall, spontaneous emission is either enhanced or suppressed. The principle is known as a cavity quantum electrodynamic effect. A surface emitting microcavity semiconductor laser has enhanced spontaneous emission rate into a lasing mode and suppressed spontaneous emission rate into nonlasing spurious modes which leads to an increased spontaneous emission coefficient and decreased lasing threshold. Various applications of such a microcavity effect are discussed.
{"title":"Squeezing and controlled spontaneous emission in semiconductor lasers","authors":"Y. Yamamoto","doi":"10.1109/DRC.1995.496226","DOIUrl":"https://doi.org/10.1109/DRC.1995.496226","url":null,"abstract":"Summary form only given. A constant-current driven semiconductor laser has a sub-Poissonian internal pump noise and thus produces a number-phase squeezed state instead of a coherent state. The measured photon number (intensity) noise was -8.6 dB below the shot noise value. The authors review the principle and the potential applications of squeezed state generation by semiconductor lasers. They discuss control of spontaneous emission in a semiconductor laser. Spontaneous emission in not an immutable property of an atom but is a consequence of atom-vacuum field (quantum mechanical zero-point fluctuation) coupling. If the intensity of a vacuum field fluctuation is modified by a cavity wall, spontaneous emission is either enhanced or suppressed. The principle is known as a cavity quantum electrodynamic effect. A surface emitting microcavity semiconductor laser has enhanced spontaneous emission rate into a lasing mode and suppressed spontaneous emission rate into nonlasing spurious modes which leads to an increased spontaneous emission coefficient and decreased lasing threshold. Various applications of such a microcavity effect are discussed.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130556933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Chang, J. Pankove, M. Leksono, B. van Zeghbroeck
Silicon Carbide has been proposed as a preferred material for high-power, high temperature semiconductor devices, primarily because of its large energy-bandgap and high thermal conductivity. Heterojunction bipolar transistors with a GaN wide bandgap emitter and SiC base and collector region have recently been demonstrated to have very high DC current gain (>100,000) and have been operated up to 260/spl deg/C. We present the first operation of a semiconductor bipolar transistor at a temperature of 500/spl deg/C with a current gain greater than 100. The GaN/SiC n-p-n HBT's common base I-V characteristics, current gain versus emitter current curves, and Gummel plots were obtained at temperatures ranging from 25/spl deg/C to 535/spl deg/C. The I-V characteristics showed little change over this temperature range, except for an increase in leakage current with increasing temperature. Only common base characteristics were obtained due to the high gain of the devices and the leakage current between base and collector. The high temperature of operation and the large gain even at elevated temperatures indicate the extraordinary potential of these devices for high-temperature and high-power operation.
{"title":"500/spl deg/C operation of a GaN/SiC heterojunction bipolar transistor","authors":"S. Chang, J. Pankove, M. Leksono, B. van Zeghbroeck","doi":"10.1109/DRC.1995.496291","DOIUrl":"https://doi.org/10.1109/DRC.1995.496291","url":null,"abstract":"Silicon Carbide has been proposed as a preferred material for high-power, high temperature semiconductor devices, primarily because of its large energy-bandgap and high thermal conductivity. Heterojunction bipolar transistors with a GaN wide bandgap emitter and SiC base and collector region have recently been demonstrated to have very high DC current gain (>100,000) and have been operated up to 260/spl deg/C. We present the first operation of a semiconductor bipolar transistor at a temperature of 500/spl deg/C with a current gain greater than 100. The GaN/SiC n-p-n HBT's common base I-V characteristics, current gain versus emitter current curves, and Gummel plots were obtained at temperatures ranging from 25/spl deg/C to 535/spl deg/C. The I-V characteristics showed little change over this temperature range, except for an increase in leakage current with increasing temperature. Only common base characteristics were obtained due to the high gain of the devices and the leakage current between base and collector. The high temperature of operation and the large gain even at elevated temperatures indicate the extraordinary potential of these devices for high-temperature and high-power operation.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"96 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125983717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fabrication of CMOS devices with feature sizes on the order of 100 nm will require junction depths of less than 70 nm in order to control short-channel effects. Fully-scaled 100x100 nm/sup 2/ source-drain regions in such devices will require contact resistivities of less than 10/sup -7/ ohm-cm/sup 2/ in order not to reach limits on currents. A W contact technology was been pursued in this work. W can be be deposited selectively with little substrate consumption and it has been shown to have a low contact resistivity on n+ Si. Si/sub x/Ge/sub 1-x/ has the further potential advantage of lowered tunnel barrier heights to p+ Si because of the reduced bandgap. Therefore there is a possibility for improving contact resistivities to p+ Si as well. Finally, W is an excellent barrier metal with good thermal stability both for Si and Si/sub x/Ge/sub 1-x/.
{"title":"Ultra-low resistance W/Si/sub 1-x/Ge/sub x//Si source-drain contacts","authors":"Y. Chieh, J.P. Krusius, D. Green, M. Ozturk","doi":"10.1109/DRC.1995.496233","DOIUrl":"https://doi.org/10.1109/DRC.1995.496233","url":null,"abstract":"Fabrication of CMOS devices with feature sizes on the order of 100 nm will require junction depths of less than 70 nm in order to control short-channel effects. Fully-scaled 100x100 nm/sup 2/ source-drain regions in such devices will require contact resistivities of less than 10/sup -7/ ohm-cm/sup 2/ in order not to reach limits on currents. A W contact technology was been pursued in this work. W can be be deposited selectively with little substrate consumption and it has been shown to have a low contact resistivity on n+ Si. Si/sub x/Ge/sub 1-x/ has the further potential advantage of lowered tunnel barrier heights to p+ Si because of the reduced bandgap. Therefore there is a possibility for improving contact resistivities to p+ Si as well. Finally, W is an excellent barrier metal with good thermal stability both for Si and Si/sub x/Ge/sub 1-x/.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127309672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Among the newly developed organic semiconductors, thiophene oligomers e.g., sexithiophene molecules are very stable under ambient conditions and they can be easily deposited as thin homogeneous films by the use of mild techniques such as vacuum evaporation at about 300/spl deg/ C. From X-ray diffraction, polarized light absorption spectroscopy and scanning electron microscopy studies, it has been shown that structural organization of molecules in the film is the determining factor which controls its electrical properties. By varying the experimental conditions for film deposition (substrate temperature) and by the development of self assembly properties in these oligomers (molecular engineering of semiconductors), highly structured film with long range order can be easily obtained as evidenced by the large anisotropy observed in conductivity, /spl sigma//sub 11///spl sigma//sub /spl perp//=150. The fabrication and mode of operation of thin film transistors based on these p-type organic semiconductors is described, in which substrate, insulator, and electrodes can be made from organic materials corresponding to an all organic device.
{"title":"New generation of organic-based thin-film transistors","authors":"F. Garnier","doi":"10.1109/DRC.1995.496227","DOIUrl":"https://doi.org/10.1109/DRC.1995.496227","url":null,"abstract":"Among the newly developed organic semiconductors, thiophene oligomers e.g., sexithiophene molecules are very stable under ambient conditions and they can be easily deposited as thin homogeneous films by the use of mild techniques such as vacuum evaporation at about 300/spl deg/ C. From X-ray diffraction, polarized light absorption spectroscopy and scanning electron microscopy studies, it has been shown that structural organization of molecules in the film is the determining factor which controls its electrical properties. By varying the experimental conditions for film deposition (substrate temperature) and by the development of self assembly properties in these oligomers (molecular engineering of semiconductors), highly structured film with long range order can be easily obtained as evidenced by the large anisotropy observed in conductivity, /spl sigma//sub 11///spl sigma//sub /spl perp//=150. The fabrication and mode of operation of thin film transistors based on these p-type organic semiconductors is described, in which substrate, insulator, and electrodes can be made from organic materials corresponding to an all organic device.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114252561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jin-Hee Lee, H. Yoon, Chul-Soon Park, Hyung‐Moo Park
The parasitic gate resistance is one of the most important factors in determining the noise performance of HEMTs. In order to reduce the gate resistance, T-shaped gates with large cross-sectional area are required. In this study, we report a AlGaAs/InGaAs pseudomorphic HEMT with a newly developed wide head T-gate fabricated by using dose split electron beam lithography and selective gate recess etching.
{"title":"Very low noise characteristics of AlGaAs/InGaAs HEMTs with wide head T-gate","authors":"Jin-Hee Lee, H. Yoon, Chul-Soon Park, Hyung‐Moo Park","doi":"10.1109/DRC.1995.496239","DOIUrl":"https://doi.org/10.1109/DRC.1995.496239","url":null,"abstract":"The parasitic gate resistance is one of the most important factors in determining the noise performance of HEMTs. In order to reduce the gate resistance, T-shaped gates with large cross-sectional area are required. In this study, we report a AlGaAs/InGaAs pseudomorphic HEMT with a newly developed wide head T-gate fabricated by using dose split electron beam lithography and selective gate recess etching.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125461964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electroabsorption modulators are typically reticulated into NxN pixel arrays with N/sup 2/ electrical leads. Extension to broad-area arrays becomes technically and economically prohibitive. We show that the multiple contacts can be replaced by two electrodes and dynamic holography by operating multiple-quantum-well (MQW) diodes as holographic thin films with no photolithographic reticulation necessary. The key to this performance is the recent discovery of sharp excitons in low-temperature-growth (LTG) MQWs. The LTG layers isolate adjacent pixels, thus eliminating the need for elaborate post-growth photolithography.
{"title":"Non-pixelated quantum well diode diffraction modulators","authors":"I. Lahiri, M. Melloch, D. Nolte","doi":"10.1109/DRC.1995.496277","DOIUrl":"https://doi.org/10.1109/DRC.1995.496277","url":null,"abstract":"Electroabsorption modulators are typically reticulated into NxN pixel arrays with N/sup 2/ electrical leads. Extension to broad-area arrays becomes technically and economically prohibitive. We show that the multiple contacts can be replaced by two electrodes and dynamic holography by operating multiple-quantum-well (MQW) diodes as holographic thin films with no photolithographic reticulation necessary. The key to this performance is the recent discovery of sharp excitons in low-temperature-growth (LTG) MQWs. The LTG layers isolate adjacent pixels, thus eliminating the need for elaborate post-growth photolithography.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126621861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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