D. Woolard, E. R. Brown, F. Buot, X. Lu, D. Rhodes, B. Perlman
The resonant tunneling diode (RTD) is an important device because it yields a negative differential resistance which can respond very rapidly to changes in applied bias. In fact, RTDs have been shown experimentally to have detection capabilities up to 2.5 THz and have been implemented as oscillators up to 712 GHz. However, RTD-based power sources have only demonstrated microwatt levels (i.e. <50 /spl mu/W) of performance above 100 GHz. Traditional RTD-based sources generate power by establishing limit-cycles which exchange energy with storage elements in the external circuit. Hence, in this implementation the amount of achievable output power will always be limited by external losses (e.g. contact resistance) and low-frequency design constraints (i.e. suppression of bias circuit oscillations). Recently, we have performed a comprehensive study of various nonlinear second-order circuit forms in an effort to reproduce the high-frequency self-oscillations observed in previous quantum-transport simulations of an RTD structure. A comparison between these two theoretical results allows one to deduce intrinsic oscillations which are free of external resonances.
{"title":"Intrinsic oscillations in resonant tunneling structures","authors":"D. Woolard, E. R. Brown, F. Buot, X. Lu, D. Rhodes, B. Perlman","doi":"10.1109/DRC.1995.496268","DOIUrl":"https://doi.org/10.1109/DRC.1995.496268","url":null,"abstract":"The resonant tunneling diode (RTD) is an important device because it yields a negative differential resistance which can respond very rapidly to changes in applied bias. In fact, RTDs have been shown experimentally to have detection capabilities up to 2.5 THz and have been implemented as oscillators up to 712 GHz. However, RTD-based power sources have only demonstrated microwatt levels (i.e. <50 /spl mu/W) of performance above 100 GHz. Traditional RTD-based sources generate power by establishing limit-cycles which exchange energy with storage elements in the external circuit. Hence, in this implementation the amount of achievable output power will always be limited by external losses (e.g. contact resistance) and low-frequency design constraints (i.e. suppression of bias circuit oscillations). Recently, we have performed a comprehensive study of various nonlinear second-order circuit forms in an effort to reproduce the high-frequency self-oscillations observed in previous quantum-transport simulations of an RTD structure. A comparison between these two theoretical results allows one to deduce intrinsic oscillations which are free of external resonances.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114151831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX (separation by implanted oxygen) silicon wafer with the top silicon layer 70 nm thick.
{"title":"Silicon quantum-dot transistors operating above 100 K","authors":"E. Leobandung, L. Guo, Y. Wang, S. Chou","doi":"10.1109/DRC.1995.496265","DOIUrl":"https://doi.org/10.1109/DRC.1995.496265","url":null,"abstract":"Reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX (separation by implanted oxygen) silicon wafer with the top silicon layer 70 nm thick.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114642039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Osenbach, N. Chand, R. Comizzoli, T.L. Evanosky, C.B. Roxlo, W. Tsang
We report on the development of the first non-hermetic InP-based communications lasers and photodiodes that have reliability comparable to their hermetic counterparts. As such, they can be used in terrestrial telecommunication applications such as fiber in the loop and cable TV. The development of the reliable non-hermetic lasers and photodiodes is expected to not only reduce packaging costs, but also lead the way for the novel low cost optoelectronic packaging technologies.
{"title":"Highly reliable non-hermetic InP-based lasers and photodiodes for telecommunication","authors":"J. Osenbach, N. Chand, R. Comizzoli, T.L. Evanosky, C.B. Roxlo, W. Tsang","doi":"10.1109/DRC.1995.496304","DOIUrl":"https://doi.org/10.1109/DRC.1995.496304","url":null,"abstract":"We report on the development of the first non-hermetic InP-based communications lasers and photodiodes that have reliability comparable to their hermetic counterparts. As such, they can be used in terrestrial telecommunication applications such as fiber in the loop and cable TV. The development of the reliable non-hermetic lasers and photodiodes is expected to not only reduce packaging costs, but also lead the way for the novel low cost optoelectronic packaging technologies.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114471496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Iwai, H. Shigematsu, H. Yamada, T. Tomioka, S. Sasa, K. Joshin, T. Fujii
We report the first demonstration of microwave power performance at an extremely low operation voltage (1.5 V) using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). Fabricated InAlAs/InGaAs DHBTs have a step graded collector structure which suppresses the collector-emitter offset voltage V/sub CE,offset/ of I-V characteristics, enabling us to use power devices at a low operation voltage.
{"title":"Microwave power InAlAs/InGaAs double heterojunction bipolar transistors with 1.5 V-low voltage operation","authors":"T. Iwai, H. Shigematsu, H. Yamada, T. Tomioka, S. Sasa, K. Joshin, T. Fujii","doi":"10.1109/DRC.1995.496283","DOIUrl":"https://doi.org/10.1109/DRC.1995.496283","url":null,"abstract":"We report the first demonstration of microwave power performance at an extremely low operation voltage (1.5 V) using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). Fabricated InAlAs/InGaAs DHBTs have a step graded collector structure which suppresses the collector-emitter offset voltage V/sub CE,offset/ of I-V characteristics, enabling us to use power devices at a low operation voltage.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121217096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We demonstrate theoretically the self-consistent operation of a complete family of logic circuits, including invertors, logic gates and flip-flops, based on complementary capacitively-coupled single-electron transistors (C-SETs), and give some estimates for the expected characteristics of these devices.
{"title":"A new logic family based on single-electron transistors","authors":"R. Chen, A. Korotkov, K. Likharev","doi":"10.1109/DRC.1995.496242","DOIUrl":"https://doi.org/10.1109/DRC.1995.496242","url":null,"abstract":"We demonstrate theoretically the self-consistent operation of a complete family of logic circuits, including invertors, logic gates and flip-flops, based on complementary capacitively-coupled single-electron transistors (C-SETs), and give some estimates for the expected characteristics of these devices.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130190768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Pehlke, A. Sailer, W. Ho, J. Higgins, H. Smith, J. Hebert, M. Vineyard
An analysis of AM noise in AlGaAs-GaAs HBT amplifiers is presented. A predictive model is introduced which allows calculation of AM noise sideband power alongside carrier signals in HBT amplifers as a result of the upconversion of low frequency noise. These sidebands are an unavoidable result of the nonlinear components in microwave oscillators and power amplifiers which causes upconversion of intrinsic low frequency 1/f noise into amplitude modulated (AM) and phase modulated (PM) sidebands about the carrier. AM and PM sidebands degrade the spectral purity of the carrier which ultimately limits system performance in communication systems. Many works have described the upconversion process in microwave oscillators with its dominant phase noise, but less attention has been paid to the AM noise of power amplifiers. This work presents the theory of such noise in AlGaAs-GaAs HBT amplification and details a predictive model that allows calculation of AM noise sidebands for any HBT device.
{"title":"A predictive model describing the upconversion of 1/f noise into AM sideband noise in HBTs","authors":"D. Pehlke, A. Sailer, W. Ho, J. Higgins, H. Smith, J. Hebert, M. Vineyard","doi":"10.1109/DRC.1995.496286","DOIUrl":"https://doi.org/10.1109/DRC.1995.496286","url":null,"abstract":"An analysis of AM noise in AlGaAs-GaAs HBT amplifiers is presented. A predictive model is introduced which allows calculation of AM noise sideband power alongside carrier signals in HBT amplifers as a result of the upconversion of low frequency noise. These sidebands are an unavoidable result of the nonlinear components in microwave oscillators and power amplifiers which causes upconversion of intrinsic low frequency 1/f noise into amplitude modulated (AM) and phase modulated (PM) sidebands about the carrier. AM and PM sidebands degrade the spectral purity of the carrier which ultimately limits system performance in communication systems. Many works have described the upconversion process in microwave oscillators with its dominant phase noise, but less attention has been paid to the AM noise of power amplifiers. This work presents the theory of such noise in AlGaAs-GaAs HBT amplification and details a predictive model that allows calculation of AM noise sidebands for any HBT device.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125412932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a novel bandgap-engineered DHBT that (i) eliminates the current-blocking potential barrier between the base and the collector, and (ii) injects hot electrons into the collector at room temperature. Using a Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.49/In/sub 0.51/As DHBT with a composite collector consisting of a 50 nm short-period chirped superlattice (CSL) and a 350 nm Ga/sub 0.47/In/sub 0.53/As collector we demonstrate that the energy band profile and the electrostatic potential arising from the ionized dopants in the base-collector space charge region can be properly tailored to produce a barrier-free conduction band for electrons, similar to that of a homojunction.
{"title":"Chirped superlattice hot electron transistor","authors":"C. Nguyen, Hsiang-Chih Sun, Takyiu Liu","doi":"10.1109/DRC.1995.496280","DOIUrl":"https://doi.org/10.1109/DRC.1995.496280","url":null,"abstract":"We report a novel bandgap-engineered DHBT that (i) eliminates the current-blocking potential barrier between the base and the collector, and (ii) injects hot electrons into the collector at room temperature. Using a Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.49/In/sub 0.51/As DHBT with a composite collector consisting of a 50 nm short-period chirped superlattice (CSL) and a 350 nm Ga/sub 0.47/In/sub 0.53/As collector we demonstrate that the energy band profile and the electrostatic potential arising from the ionized dopants in the base-collector space charge region can be properly tailored to produce a barrier-free conduction band for electrons, similar to that of a homojunction.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123603075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Slater, L. Lipkin, G.M. Johnson, A. Suvorov, J. Palmour
SiC devices are capable of operating at very high temperatures, allowing placement of electronics in high temperature ambients with limited cooling. The enhancement-mode MOSFET, used extensively in analog and digital circuits, has a particular advantage for high temperature operation because of its insulated gate. Research in this area has produced SiC n-channel depletion-mode devices/circuits and n-channel enhancement-mode digital gates operating from 25 to 300/spl deg/C. In this report, we demonstrate the first p-channel enhancement-mode MOSFETs and integrated circuits with good characteristics from 25 to 500/spl deg/C. The first enhancement-mode NMOS operational amplifier has also been fabricated and tested. The limited transconductance of SiC MOSFETs makes it difficult to produce sizable voltage gains without active loads. This work is focused on solving this problem by developing a potential SiC CMOS technology.
{"title":"High temperature enhancement-mode NMOS and PMOS devices and circuits in 6H-SiC","authors":"D. Slater, L. Lipkin, G.M. Johnson, A. Suvorov, J. Palmour","doi":"10.1109/DRC.1995.496288","DOIUrl":"https://doi.org/10.1109/DRC.1995.496288","url":null,"abstract":"SiC devices are capable of operating at very high temperatures, allowing placement of electronics in high temperature ambients with limited cooling. The enhancement-mode MOSFET, used extensively in analog and digital circuits, has a particular advantage for high temperature operation because of its insulated gate. Research in this area has produced SiC n-channel depletion-mode devices/circuits and n-channel enhancement-mode digital gates operating from 25 to 300/spl deg/C. In this report, we demonstrate the first p-channel enhancement-mode MOSFETs and integrated circuits with good characteristics from 25 to 500/spl deg/C. The first enhancement-mode NMOS operational amplifier has also been fabricated and tested. The limited transconductance of SiC MOSFETs makes it difficult to produce sizable voltage gains without active loads. This work is focused on solving this problem by developing a potential SiC CMOS technology.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126300302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spectrally and spatially resolved infrared microscopy has been used to study the steady state internal physics of semiconductor laser diodes. By imaging the longitudinal intra-cavity spontaneous emission profiles of both long wavelength bulk and MQW CMBH Fabry-Perot InGaAsP/InP lasers lasing at 1.48/spl mu/m, we observed the longitudinal spatial hole burning above the lasing threshold.
{"title":"Imaging spatial and spectral inhomogenous spontaneous emission in high power semiconductor lasers","authors":"C. Bethea, W. Fang, Y.K. Chen, S. Chuang","doi":"10.1109/DRC.1995.496308","DOIUrl":"https://doi.org/10.1109/DRC.1995.496308","url":null,"abstract":"Spectrally and spatially resolved infrared microscopy has been used to study the steady state internal physics of semiconductor laser diodes. By imaging the longitudinal intra-cavity spontaneous emission profiles of both long wavelength bulk and MQW CMBH Fabry-Perot InGaAsP/InP lasers lasing at 1.48/spl mu/m, we observed the longitudinal spatial hole burning above the lasing threshold.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116778037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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{"title":"1995 53rd Annual Device Research Conference Digest","authors":"","doi":"10.1109/DRC.1995.496243","DOIUrl":"https://doi.org/10.1109/DRC.1995.496243","url":null,"abstract":"ing is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923. For other copying, reprint or republication, write to IEEE Copyrights Manager, IEEE Service Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331. All rights reserved. Copyright","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116290906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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