Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277007
G. Guo, Linsheng Wu, Yao-ping Zhang, J. Mao
An antenna array is designed with 2×8 45-degree polarized stacked patches around 28 GHz in low temperature co-fired ceramic (LTCC) for the applications of the fifth-generation wireless communication (5G). As demonstrated by the measured reflection coefficient and realized gain response, the bandwidth is broadened when compared with single-patch array. The proposed antenna-in-package (AiP) can operate from 26.3 to 29.8 GHz, with the maximum realized gain of 15.1 dBi, the 3-dB beamwidth of 11° and the estimated efficiency of 55%. Reasonable agreement is achieved between the measured and simulated results. The AiP arrays on LTCC show a promising foreground for 5G high-frequency applications.
{"title":"Stacked patch array in LTCC for 28 GHz antenna-in-package applications","authors":"G. Guo, Linsheng Wu, Yao-ping Zhang, J. Mao","doi":"10.1109/EDAPS.2017.8277007","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277007","url":null,"abstract":"An antenna array is designed with 2×8 45-degree polarized stacked patches around 28 GHz in low temperature co-fired ceramic (LTCC) for the applications of the fifth-generation wireless communication (5G). As demonstrated by the measured reflection coefficient and realized gain response, the bandwidth is broadened when compared with single-patch array. The proposed antenna-in-package (AiP) can operate from 26.3 to 29.8 GHz, with the maximum realized gain of 15.1 dBi, the 3-dB beamwidth of 11° and the estimated efficiency of 55%. Reasonable agreement is achieved between the measured and simulated results. The AiP arrays on LTCC show a promising foreground for 5G high-frequency applications.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128660975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277003
Lina Qiu, G. Xiao, X. Kong
In this paper we presented a diffuse scattering metasurface with cross-shaped units of randomly chosen sizes. The main energy of the incident wave is scattered to many different directions of the upper half space through the metasurface, resulting in the reduction of backward radar cross section (RCS). We designed a two-layered metasurface consisting of a top layer of metal patches and a flexible polyimide substrate. Owing to the good flexibility of polyimide, this structure can be easily attached to metal screen of curved shapes. After optimization, the simulation results show that the proposed metasurface can reduce the backward RCS by about 10 dB over the whole X band.
{"title":"Broadband diffuse scattering metasurface with units of randomly distributed sizes","authors":"Lina Qiu, G. Xiao, X. Kong","doi":"10.1109/EDAPS.2017.8277003","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277003","url":null,"abstract":"In this paper we presented a diffuse scattering metasurface with cross-shaped units of randomly chosen sizes. The main energy of the incident wave is scattered to many different directions of the upper half space through the metasurface, resulting in the reduction of backward radar cross section (RCS). We designed a two-layered metasurface consisting of a top layer of metal patches and a flexible polyimide substrate. Owing to the good flexibility of polyimide, this structure can be easily attached to metal screen of curved shapes. After optimization, the simulation results show that the proposed metasurface can reduce the backward RCS by about 10 dB over the whole X band.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114465419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276931
Zhilin Chen, Zhiqing Liu, Zhengdong Jiang, P. Liu, Huihua Liu, Yunqiu Wu, Chenxi Zhao, K. Kang
A 27.5–43.5 GHz high linearity up-conversion mixer for 5G communication is designed and fabricated by standard 65 nm CMOS process. The mixer consists of a double balanced Gilbert cell and a linearized transconductance stage which is used to enhance the mixer linearity. In addition, based on the coupled resonators, the input and output baluns implement wide-band impedance matching. The mixer achieves IF-port input reflection coefficient less than −10 dB for frequency 9.7–17.8 GHz, and RF-port input reflection coefficient less than −10 dB for frequency 34.3 to 47.7 GHz. The conversion gain is −5 dB to −8 dB within 27.5–43.5 GHz. LO leakage to the IF port and RF port is less than −43 dB and −40 dB, respectively. The mixer realizes an output 1 dB compression point as high as 0.42 dBm at 38 GHz, while consuming 14 mW from a 1V supply.
{"title":"A 27.5–43.5 GHz high linearity up-conversion CMOS mixer for 5G communication","authors":"Zhilin Chen, Zhiqing Liu, Zhengdong Jiang, P. Liu, Huihua Liu, Yunqiu Wu, Chenxi Zhao, K. Kang","doi":"10.1109/EDAPS.2017.8276931","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276931","url":null,"abstract":"A 27.5–43.5 GHz high linearity up-conversion mixer for 5G communication is designed and fabricated by standard 65 nm CMOS process. The mixer consists of a double balanced Gilbert cell and a linearized transconductance stage which is used to enhance the mixer linearity. In addition, based on the coupled resonators, the input and output baluns implement wide-band impedance matching. The mixer achieves IF-port input reflection coefficient less than −10 dB for frequency 9.7–17.8 GHz, and RF-port input reflection coefficient less than −10 dB for frequency 34.3 to 47.7 GHz. The conversion gain is −5 dB to −8 dB within 27.5–43.5 GHz. LO leakage to the IF port and RF port is less than −43 dB and −40 dB, respectively. The mixer realizes an output 1 dB compression point as high as 0.42 dBm at 38 GHz, while consuming 14 mW from a 1V supply.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116200406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276990
W. Xu, Kaixue Ma, Shouxian Mou
In this paper, a band-stop filter (BSF) is presented with triple electric paths formed by the transformed radial stub (TRS) and phase inverter line (PIL). The filter topology is theoretically investigated for bandwidth extension with proposed equivalent circuit model. To validate the design concept, a BSF prototype with central frequency fc of 1.6 GHz is designed and implemented. The measured results show that the filter features a fractional bandwidth of 94.3%. Also it demonstrates ultra-wide passband up to 19.24 GHz (12fc), insertion loss of 1.69 dB including the I/O connectors, and a compact size of 0.3λg × 0.3λg (λg is the guide wavelength at central frequency) with zero lumped elements applied.
{"title":"A new band-stop filter design with triple electric paths for passband extension","authors":"W. Xu, Kaixue Ma, Shouxian Mou","doi":"10.1109/EDAPS.2017.8276990","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276990","url":null,"abstract":"In this paper, a band-stop filter (BSF) is presented with triple electric paths formed by the transformed radial stub (TRS) and phase inverter line (PIL). The filter topology is theoretically investigated for bandwidth extension with proposed equivalent circuit model. To validate the design concept, a BSF prototype with central frequency fc of 1.6 GHz is designed and implemented. The measured results show that the filter features a fractional bandwidth of 94.3%. Also it demonstrates ultra-wide passband up to 19.24 GHz (12fc), insertion loss of 1.69 dB including the I/O connectors, and a compact size of 0.3λg × 0.3λg (λg is the guide wavelength at central frequency) with zero lumped elements applied.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125346455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277019
Shaoheng Luo, Baixin Chen, Ke Li, Cheng Zhuo, Yiyu Shi
At sub-14nm regime, large area overhead induced by on-chip capacitor and inductor is a major concern to ensure power integrity or enable on-chip applications. To overcome this issue, a novel 3D Through-Silicon-Via (TSV) based capacitor is investigated in this work, which may achieve both high density and high performance. The capacitor simulated in this work alleviates the depletion effect adding doping region around the TSV so that the capacitor can maintain its maximum value within operation voltage range. Moreover, the equivalent serial resistance of the proposed capacitor is reduced through doping and distributed grounded contact technology. An LC resonant clock is also simulated in this work, by replacing conventional capacitor and inductor to TSV based structures, it may achieve a 16.3x capacitor area reduction and 2.2x inductor area reduction while the performance stays almost the same.
{"title":"Novel LC resonant clocking for 3D IC using TSV-inductor and capacitor","authors":"Shaoheng Luo, Baixin Chen, Ke Li, Cheng Zhuo, Yiyu Shi","doi":"10.1109/EDAPS.2017.8277019","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277019","url":null,"abstract":"At sub-14nm regime, large area overhead induced by on-chip capacitor and inductor is a major concern to ensure power integrity or enable on-chip applications. To overcome this issue, a novel 3D Through-Silicon-Via (TSV) based capacitor is investigated in this work, which may achieve both high density and high performance. The capacitor simulated in this work alleviates the depletion effect adding doping region around the TSV so that the capacitor can maintain its maximum value within operation voltage range. Moreover, the equivalent serial resistance of the proposed capacitor is reduced through doping and distributed grounded contact technology. An LC resonant clock is also simulated in this work, by replacing conventional capacitor and inductor to TSV based structures, it may achieve a 16.3x capacitor area reduction and 2.2x inductor area reduction while the performance stays almost the same.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122604667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The advantage and reason, including electrical performance, design flexibility and potential cost saving, to adopt a coreless organic substrate in a FCBGA package is described. Especially, the cross talk and insertion loss comparison analysis between normal thick core and coreless FCBGA is presented, and there is about 10∼20 dB cross talk improvement for the coreless substrate design over the thick core substrate. However, the coreless doesn't has better insertion loss as expectation due to poor impedance control near solderball locations. In this paper, also propose the design optimization when coreless substrate is implemented.
{"title":"Design and electrical performance analysis on coreless flip chip BGA substrate","authors":"Chih-Yi Huang, Chen-Chao Wang, Tsun-Lung Hsieh, Cheng-Yu Tsai","doi":"10.1109/EDAPS.2017.8276998","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276998","url":null,"abstract":"The advantage and reason, including electrical performance, design flexibility and potential cost saving, to adopt a coreless organic substrate in a FCBGA package is described. Especially, the cross talk and insertion loss comparison analysis between normal thick core and coreless FCBGA is presented, and there is about 10∼20 dB cross talk improvement for the coreless substrate design over the thick core substrate. However, the coreless doesn't has better insertion loss as expectation due to poor impedance control near solderball locations. In this paper, also propose the design optimization when coreless substrate is implemented.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124745410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277041
Yuhang Dou, Ke-Li Wu
A passive circuit model is proposed for loop antennas of arbitrary shape, which is derived from the partial element equivalent circuit (PEEC) model using a physically meaningful micro-modeling method without any approximation. Different from the conventional method, the frequency-dependent electromagnetic couplings and radiation effects are reflected by frequency-dependent inductive couplings and radiation resistance, which can describe the antenna working mechanism more reasonably. In this paper, the variation tendency of the circuit elements for different working frequencies is presented to reveal the radiation characteristic of the loop antenna.
{"title":"Physically derived micro-modeling circuit for loop antenna of arbitrary shape","authors":"Yuhang Dou, Ke-Li Wu","doi":"10.1109/EDAPS.2017.8277041","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277041","url":null,"abstract":"A passive circuit model is proposed for loop antennas of arbitrary shape, which is derived from the partial element equivalent circuit (PEEC) model using a physically meaningful micro-modeling method without any approximation. Different from the conventional method, the frequency-dependent electromagnetic couplings and radiation effects are reflected by frequency-dependent inductive couplings and radiation resistance, which can describe the antenna working mechanism more reasonably. In this paper, the variation tendency of the circuit elements for different working frequencies is presented to reveal the radiation characteristic of the loop antenna.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130719071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277037
Shuo Zhang, Jun Z. Huang, Zhenguo Zhao, W. Yin
Ultra-scaled silicon double-gate pMOSFETs with different channel lengths and thicknesses, as well as confinement and transport crystal orientations are simulated by the non-equilibrium Green's function (NEGF) approach employing the six-band k·p Hamiltonian. The ballistic ON-state current (Ion) and the subthreshold swing (SS) are extracted from the I-V curves to evaluate the device performances. It is found that the optimal crystal orientation is dramatically different for different channel lengths and thicknesses. To understand such device behaviors, band structures, average ballistic hole velocities, and source-to-drain tunneling are calculated and compared.
{"title":"Influence of channel length, thickness, and crystal orientation in ultra-scaled double-gate pMOSFETs","authors":"Shuo Zhang, Jun Z. Huang, Zhenguo Zhao, W. Yin","doi":"10.1109/EDAPS.2017.8277037","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277037","url":null,"abstract":"Ultra-scaled silicon double-gate pMOSFETs with different channel lengths and thicknesses, as well as confinement and transport crystal orientations are simulated by the non-equilibrium Green's function (NEGF) approach employing the six-band k·p Hamiltonian. The ballistic ON-state current (Ion) and the subthreshold swing (SS) are extracted from the I-V curves to evaluate the device performances. It is found that the optimal crystal orientation is dramatically different for different channel lengths and thicknesses. To understand such device behaviors, band structures, average ballistic hole velocities, and source-to-drain tunneling are calculated and compared.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130910065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276909
Ping Li, L. J. Jiang, H. Bağcı
A discontinuous Galerkin time-domain (DGTD) method is proposed in this work to analyze printed circuit board (PCB) power/ground plate-pair having arbitrarily shaped anti-pads. To apply proper excitation source over the irregular anti-pad, the implemented wave port magnetic current excitation is expanded by the electric eigen-modes of the anti-pad that are calculated via either numerical approach or analytical method. Based on the orthogonality of eigen-modes, the temporal mode expansion coefficient for each mode can be conveniently extracted. Besides, considering the presence of decoupling capacitors, the whole physical system can be split into field and circuit subsystems. For the field subsystem, it is governed by the Maxwell's equations, thus it will be solved by DGTD method. For the circuit subsystem, the modified nodal analysis (MNA) is applied. In order to achieve the coupling between the field and circuit subsystems, a lumpled port is defined at the interface between the field and circuit subsystems. To verify the proposed algorithm, several representative examples are benchmarked.
{"title":"Numerical modeling of PCB power/ground plate-pairs by DGTD method taking into account decoupling capacitors","authors":"Ping Li, L. J. Jiang, H. Bağcı","doi":"10.1109/EDAPS.2017.8276909","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276909","url":null,"abstract":"A discontinuous Galerkin time-domain (DGTD) method is proposed in this work to analyze printed circuit board (PCB) power/ground plate-pair having arbitrarily shaped anti-pads. To apply proper excitation source over the irregular anti-pad, the implemented wave port magnetic current excitation is expanded by the electric eigen-modes of the anti-pad that are calculated via either numerical approach or analytical method. Based on the orthogonality of eigen-modes, the temporal mode expansion coefficient for each mode can be conveniently extracted. Besides, considering the presence of decoupling capacitors, the whole physical system can be split into field and circuit subsystems. For the field subsystem, it is governed by the Maxwell's equations, thus it will be solved by DGTD method. For the circuit subsystem, the modified nodal analysis (MNA) is applied. In order to achieve the coupling between the field and circuit subsystems, a lumpled port is defined at the interface between the field and circuit subsystems. To verify the proposed algorithm, several representative examples are benchmarked.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132478595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276913
W. Feng, Rui Yin, W. Che
A novel balanced-to-unbalanced filtering power divider using ring resonators is proposed. Due to the symmetry of the circuit model, even/odd-mode analysis method is applied to deduce the design equations at the operating frequency. The ring resonators can bring two transmission zeros in each side of the passband for differential-mode, which can improve frequency selectivity and out-of-band suppression. A fabricated prototype (εr = 2.65, h = 1 mm, tan δ = 0.003) with 4-dB bandwidth of 12.5% is designed and measured to prove the proposed methods.
提出了一种基于环形谐振器的平衡-不平衡滤波功率分配器。由于电路模型的对称性，采用偶/奇模分析方法推导出工作频率下的设计方程。环形谐振器可以在差模通带两侧各引入两个传输零点，提高了频率选择性和带外抑制能力。设计了一个4 db带宽为12.5%的样机(εr = 2.65, h = 1 mm, tan δ = 0.003)，并进行了测试。
{"title":"High performance balanced-to-unbalanced filtering power divider","authors":"W. Feng, Rui Yin, W. Che","doi":"10.1109/EDAPS.2017.8276913","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276913","url":null,"abstract":"A novel balanced-to-unbalanced filtering power divider using ring resonators is proposed. Due to the symmetry of the circuit model, even/odd-mode analysis method is applied to deduce the design equations at the operating frequency. The ring resonators can bring two transmission zeros in each side of the passband for differential-mode, which can improve frequency selectivity and out-of-band suppression. A fabricated prototype (εr = 2.65, h = 1 mm, tan δ = 0.003) with 4-dB bandwidth of 12.5% is designed and measured to prove the proposed methods.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114287223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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