Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277049
M. Tang, J. Mao
An effective approach for simulating electronic transport in graphene nanoribbon (GNR) interconnects is presented based on the Boltzmann-Poisson formalism. The Boltzmann transport equation (BTE) is solved under the relaxation time approximation (RTA). Using this method, the current-voltage (I-V) characteristics of metallic GNRs are investigated in detail. The proposed method can provide accurate prediction of I-V characteristics of GNR interconnects.
{"title":"Simulation of graphene nanoribbon interconnects by boltzmann-poisson approach under relaxation time approximation","authors":"M. Tang, J. Mao","doi":"10.1109/EDAPS.2017.8277049","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277049","url":null,"abstract":"An effective approach for simulating electronic transport in graphene nanoribbon (GNR) interconnects is presented based on the Boltzmann-Poisson formalism. The Boltzmann transport equation (BTE) is solved under the relaxation time approximation (RTA). Using this method, the current-voltage (I-V) characteristics of metallic GNRs are investigated in detail. The proposed method can provide accurate prediction of I-V characteristics of GNR interconnects.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122584193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276911
Wei Wu, Hong-li Peng, J. Mao
A new compact dual polarized co-axial antenna with gain greater than 8.0dBi is presented operated in 0.69GHz–0.96GHz/1.71GHz–2.69GHz. The size of the antenna is 286 × 286 × 81mm3. Its reflection coefficient and the cross-polarization isolation are less than −10.5dB (−12dB) and higher than 15dB (20dB) in low (high) frequency respectively. Measured results are agree well with the simulated one, verifying the availability of this antenna design.
{"title":"A new compact dual-polarized co-axial full-band antenna for 2G/3G/LTE base station applications","authors":"Wei Wu, Hong-li Peng, J. Mao","doi":"10.1109/EDAPS.2017.8276911","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276911","url":null,"abstract":"A new compact dual polarized co-axial antenna with gain greater than 8.0dBi is presented operated in 0.69GHz–0.96GHz/1.71GHz–2.69GHz. The size of the antenna is 286 × 286 × 81mm<sup>3</sup>. Its reflection coefficient and the cross-polarization isolation are less than −10.5dB (−12dB) and higher than 15dB (20dB) in low (high) frequency respectively. Measured results are agree well with the simulated one, verifying the availability of this antenna design.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120948009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277050
B. Wu
In this paper, we describe the architecture and performance of a fine pitch multi-chip heterogeneous integration solution using embedded ceramic interconnect bridge (ECIB) in organic substrate package. We present the increased IO density and the improvement of electrical high-speed performance on signal integrity are achievable through this novel integration scheme, where small ceramic elements are embedded and served as interconnect bridges in organic substrate.
{"title":"Embedded ceramic interconnect bridge in organic substrate for heterogeneous integration and multi-chip packaging","authors":"B. Wu","doi":"10.1109/EDAPS.2017.8277050","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277050","url":null,"abstract":"In this paper, we describe the architecture and performance of a fine pitch multi-chip heterogeneous integration solution using embedded ceramic interconnect bridge (ECIB) in organic substrate package. We present the increased IO density and the improvement of electrical high-speed performance on signal integrity are achievable through this novel integration scheme, where small ceramic elements are embedded and served as interconnect bridges in organic substrate.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117345216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277039
Qiwei Zhan, Rui Zhang, James Baker, H. Hansen, Q. Liu
Foaming the expanded polyethylene (PE) is a prevailing way to lower the dielectric constants and dissipation factors of insulators in modern communication high-speed cables. The porosity and elongated cell shapes impose significant effects on the dielectric properties of PE. However, a theoretical study is lacking. This work proposes an effective way to predict the dielectric parameters of foamed PE. Unlike directly generating the extremely dense meshes for the randomly distributed pores, which is usually computationally intractable, we apply an electrodynamics homogenization method to obtain the equivalent anisotropic model for the complex foamed insulators. It is shown that the predicted values are amenable to the experimentally measured data.
{"title":"Mapping the foam-induced dielectric anisotropy for high-speed cables","authors":"Qiwei Zhan, Rui Zhang, James Baker, H. Hansen, Q. Liu","doi":"10.1109/EDAPS.2017.8277039","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277039","url":null,"abstract":"Foaming the expanded polyethylene (PE) is a prevailing way to lower the dielectric constants and dissipation factors of insulators in modern communication high-speed cables. The porosity and elongated cell shapes impose significant effects on the dielectric properties of PE. However, a theoretical study is lacking. This work proposes an effective way to predict the dielectric parameters of foamed PE. Unlike directly generating the extremely dense meshes for the randomly distributed pores, which is usually computationally intractable, we apply an electrodynamics homogenization method to obtain the equivalent anisotropic model for the complex foamed insulators. It is shown that the predicted values are amenable to the experimentally measured data.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128768127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276996
Xin Chen, Q. Tang, M. Tong
In this paper, a new algorithm for the generation of the approximate poles and residues of multiconductor transmission lines characterized by frequency-dependent per-unit-length parameters is presented. Based on the Green's function-based delay-rational model for lossy transmission lines, which performs a reduced number of rational functions for the open-end impedance matrix, the proposed algorithm is more efficient by performing the poles and residues approximation comparing with solving high order equation. And the frequency response and transient analysis results have been considered when compared to the delay-rational model calculated. The results show that the proposed method can achieve an over seventy percent speed-up while keeping a good accuracy.
{"title":"An efficient approximation method for delay-rational model of multiconductor transmission line","authors":"Xin Chen, Q. Tang, M. Tong","doi":"10.1109/EDAPS.2017.8276996","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276996","url":null,"abstract":"In this paper, a new algorithm for the generation of the approximate poles and residues of multiconductor transmission lines characterized by frequency-dependent per-unit-length parameters is presented. Based on the Green's function-based delay-rational model for lossy transmission lines, which performs a reduced number of rational functions for the open-end impedance matrix, the proposed algorithm is more efficient by performing the poles and residues approximation comparing with solving high order equation. And the frequency response and transient analysis results have been considered when compared to the delay-rational model calculated. The results show that the proposed method can achieve an over seventy percent speed-up while keeping a good accuracy.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129132558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276929
Yujie Hua, Cheng-rui Zhang, Liang Zhou, J. Mao
This paper demonstrated the design methodology of 3 dimensional wafer level integrations of slow wave coupled oscillators. The Q factors have been calculated, compared and improved with the transmission line resonators. In order to minimize the size of the oscillator, we used multilayer BCB to integrate the GaAs FET low noise amplifier and slow wave resonators. Finally the phase noise of the packaged oscillator has been calculated.
{"title":"Design of 3-dimensional wafer level integrations of slow-wave coupled oscillators","authors":"Yujie Hua, Cheng-rui Zhang, Liang Zhou, J. Mao","doi":"10.1109/EDAPS.2017.8276929","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276929","url":null,"abstract":"This paper demonstrated the design methodology of 3 dimensional wafer level integrations of slow wave coupled oscillators. The Q factors have been calculated, compared and improved with the transmission line resonators. In order to minimize the size of the oscillator, we used multilayer BCB to integrate the GaAs FET low noise amplifier and slow wave resonators. Finally the phase noise of the packaged oscillator has been calculated.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116568541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276965
Qijun Lu, Zhangming Zhu, Yintang Yang, Xiangkun Yin, Xiaoxian Liu, Chenbing Qu, Yang Liu
A simple formula for the internal impedance of mixed carbon nanotube (CNT) bundles is proposed in this paper. It can appropriately capture the skin effect as well as temperature effect of mixed CNT bundles. The computing time and results of the simple formula and the numerical calculation are compared with various mean diameters, standard deviations, and temperatures. It is shown that the proposed simple formula can improve the efficiency dramatically, and has very high accuracy in the whole frequency range considered, with maximum errors of 1.2% and 2.5% for the resistance and the internal inductance, respectively.
{"title":"Simple formula for the internal impedance of mixed carbon nanotube bundles","authors":"Qijun Lu, Zhangming Zhu, Yintang Yang, Xiangkun Yin, Xiaoxian Liu, Chenbing Qu, Yang Liu","doi":"10.1109/EDAPS.2017.8276965","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276965","url":null,"abstract":"A simple formula for the internal impedance of mixed carbon nanotube (CNT) bundles is proposed in this paper. It can appropriately capture the skin effect as well as temperature effect of mixed CNT bundles. The computing time and results of the simple formula and the numerical calculation are compared with various mean diameters, standard deviations, and temperatures. It is shown that the proposed simple formula can improve the efficiency dramatically, and has very high accuracy in the whole frequency range considered, with maximum errors of 1.2% and 2.5% for the resistance and the internal inductance, respectively.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116606967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276997
Wenchao Chen, Manxi Wang, W. Yin, Erping Li
Multi-physical study of self-heating effect in GeOI MOSFET with 4nm channel thickness and 300nm channel length for digital integrated circuit is carried out by using finite element algorithm to solve carrier transport equations, Poisson equation, current continuity equations and thermal conduction equation. The simulated J-V curve is obtained by solving diffusive carrier transport equations. The time-dependent thermal conduction equation is solved to get the transient temperature response of the GeOI MOSFET. Due to the small size of the simulated structure, temperature response is in the scale of nanosecond according to our simulation results.
{"title":"Multiphysics modeling and simulation of ultra-thin channel Germanium on insulator (GeOI) MOSFETs","authors":"Wenchao Chen, Manxi Wang, W. Yin, Erping Li","doi":"10.1109/EDAPS.2017.8276997","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276997","url":null,"abstract":"Multi-physical study of self-heating effect in GeOI MOSFET with 4nm channel thickness and 300nm channel length for digital integrated circuit is carried out by using finite element algorithm to solve carrier transport equations, Poisson equation, current continuity equations and thermal conduction equation. The simulated J-V curve is obtained by solving diffusive carrier transport equations. The time-dependent thermal conduction equation is solved to get the transient temperature response of the GeOI MOSFET. Due to the small size of the simulated structure, temperature response is in the scale of nanosecond according to our simulation results.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128128668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276943
Aixin Chen, Li Wang, Xiangwei Ning, Yue Zhao
In this paper, electromagnetic compatibility (EMC) of a four-layer printed circuit board (PCB) with the function of Digital-to-Analog conversion (DAC) is analyzed. The characteristic is explored by the method of combination of field and circuit. Resonance of power layer is simulated in SIwave and noise of critical signal lines are simulated in Designer. Based on the result of simulation, some improvement approaches are put forward and applied to the PCB design. Finally, the DAC of the board has accomplished and the frequency spectrum of analog waveform is measured by network analyzer. The result of measurement shows a pure sine spectrum with noise lower than − 45dBm.
{"title":"EMC analysis on field and circuit of PCB","authors":"Aixin Chen, Li Wang, Xiangwei Ning, Yue Zhao","doi":"10.1109/EDAPS.2017.8276943","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276943","url":null,"abstract":"In this paper, electromagnetic compatibility (EMC) of a four-layer printed circuit board (PCB) with the function of Digital-to-Analog conversion (DAC) is analyzed. The characteristic is explored by the method of combination of field and circuit. Resonance of power layer is simulated in SIwave and noise of critical signal lines are simulated in Designer. Based on the result of simulation, some improvement approaches are put forward and applied to the PCB design. Finally, the DAC of the board has accomplished and the frequency spectrum of analog waveform is measured by network analyzer. The result of measurement shows a pure sine spectrum with noise lower than − 45dBm.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128450972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276925
Jiatong Huang, Yiping Zhu, Zerun Yin, Zhijie Zhang, Shaohui Xu, D. Xiong, P. Yang, Lianwei Wang, P. Chu
A flexible pyramidal piezoelectric structure composed of a PVDF-TrFE piezoelectric film which can generate high output voltage is simulated and fabricated. Compared to the flat, square columnar and trigonal-line micropatterned thin films, the pyramidal structure has stronger variation strain and produces higher piezoelectric signals. When they are subjected to the same mechanical load, the pyramidal structure generates output voltage that is 9 times larger than that of the planar film. The optimized flexible piezoelectric film has broad application in self-powered pressure sensors.
{"title":"Optimization model for flexible piezoelectric film in self-powered pressure sensor","authors":"Jiatong Huang, Yiping Zhu, Zerun Yin, Zhijie Zhang, Shaohui Xu, D. Xiong, P. Yang, Lianwei Wang, P. Chu","doi":"10.1109/EDAPS.2017.8276925","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276925","url":null,"abstract":"A flexible pyramidal piezoelectric structure composed of a PVDF-TrFE piezoelectric film which can generate high output voltage is simulated and fabricated. Compared to the flat, square columnar and trigonal-line micropatterned thin films, the pyramidal structure has stronger variation strain and produces higher piezoelectric signals. When they are subjected to the same mechanical load, the pyramidal structure generates output voltage that is 9 times larger than that of the planar film. The optimized flexible piezoelectric film has broad application in self-powered pressure sensors.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127670953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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