Rapid calculation of electromagnetic scattering problems over a wide incident angle range is always a difficult subject in computational electromagnetics. Recently, as compressed sensing was introduced into method of moments, a fast algorithm for analyzing electromagnetic scattering characteristics illuminated by waves from multiple incident angles was proposed. This paper takes excitation matrix as prior knowledge and provides three accelerating techniques to the algorithm. The principle is described in detail, and numerical results are presented to show the efficiencies.
{"title":"The techniques to accelerate solving electromagnetic scattering over wide angles based on prior knowledge of excitations","authors":"Xinyuan Cao, Mingsheng Chen, Xianliang Wu, M. Kong, Liang Zhang, Qi Qi","doi":"10.1109/EDAPS.2017.8277022","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277022","url":null,"abstract":"Rapid calculation of electromagnetic scattering problems over a wide incident angle range is always a difficult subject in computational electromagnetics. Recently, as compressed sensing was introduced into method of moments, a fast algorithm for analyzing electromagnetic scattering characteristics illuminated by waves from multiple incident angles was proposed. This paper takes excitation matrix as prior knowledge and provides three accelerating techniques to the algorithm. The principle is described in detail, and numerical results are presented to show the efficiencies.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116050817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/edaps.2017.8276907
LiShu Wu, Y. Kong, Wei Cheng, Youtao Zhang, Tangsheng Chen
In this work, we demonstrate the wafer-scale heterogeneous integration of III-V MMIC and Silicon complementary metal oxide semiconductor (Si CMOS) on the same Silicon substrate based on epitaxial layer transfer technique, III-V Compound semiconductor devices are vertical stacked at the top of the Si CMOS wafer using wafer bonding technique. Meanwhile, we exhibit a wide band GaAs digital controlled switch circuit and InP HBT quantizing chip with 1:16 demultiplexer as examples, which shows the potential to integrate III-V MMIC and Si CMOS on the same chip to take advance of the two different material systems.
{"title":"Heterogenous integration of III-V MMIC and Si CMOS","authors":"LiShu Wu, Y. Kong, Wei Cheng, Youtao Zhang, Tangsheng Chen","doi":"10.1109/edaps.2017.8276907","DOIUrl":"https://doi.org/10.1109/edaps.2017.8276907","url":null,"abstract":"In this work, we demonstrate the wafer-scale heterogeneous integration of III-V MMIC and Silicon complementary metal oxide semiconductor (Si CMOS) on the same Silicon substrate based on epitaxial layer transfer technique, III-V Compound semiconductor devices are vertical stacked at the top of the Si CMOS wafer using wafer bonding technique. Meanwhile, we exhibit a wide band GaAs digital controlled switch circuit and InP HBT quantizing chip with 1:16 demultiplexer as examples, which shows the potential to integrate III-V MMIC and Si CMOS on the same chip to take advance of the two different material systems.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116736584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277025
Zhengping Chen, Sujuan Zhang, Y. Qiu
With the rise of counterfeiting, and counterfeit electronic components are widely used in various field. Although the components used in the military equipment are through the layers of quality checks before installed, there are still a lot of counterfeit components do not be checked out. In this paper, an identification method for counterfeit components based on physical analysis test techniques, such as visual inspection, scanning acoustic microscope (SAM) and scanning electron microscope (SEM) examination, was proposed. And a case was applied and analyzed, which indicated that the proposed method can identify counterfeit devices effectively.
{"title":"An identification method of counterfeit components based on physical analysis test technology","authors":"Zhengping Chen, Sujuan Zhang, Y. Qiu","doi":"10.1109/EDAPS.2017.8277025","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277025","url":null,"abstract":"With the rise of counterfeiting, and counterfeit electronic components are widely used in various field. Although the components used in the military equipment are through the layers of quality checks before installed, there are still a lot of counterfeit components do not be checked out. In this paper, an identification method for counterfeit components based on physical analysis test techniques, such as visual inspection, scanning acoustic microscope (SAM) and scanning electron microscope (SEM) examination, was proposed. And a case was applied and analyzed, which indicated that the proposed method can identify counterfeit devices effectively.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114757534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277044
Qing Xu, M. Tong
Electromagnetic compatibility (EMC) design for chip structures requires an accurate electromagnetic (EM) modeling and analysis for involved shielding enclosures which are usually made of conductors. The shielding effectiveness of the enclosure can be evaluated through solving for the electric field inside the enclosure. Traditionally, the problem can be solved by the method of moments (MoM) in integral equation approach, but we propose a Nyström scheme to solve it. The Nyström scheme has several merits compared to the MoM, but it has not been used to analyze the EMC problems with very thin conductors. A numerical example is presented to demonstrate the scheme and good results have been obtained.
{"title":"Electromagnetic modeling of shielding enclosure for chip structures","authors":"Qing Xu, M. Tong","doi":"10.1109/EDAPS.2017.8277044","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277044","url":null,"abstract":"Electromagnetic compatibility (EMC) design for chip structures requires an accurate electromagnetic (EM) modeling and analysis for involved shielding enclosures which are usually made of conductors. The shielding effectiveness of the enclosure can be evaluated through solving for the electric field inside the enclosure. Traditionally, the problem can be solved by the method of moments (MoM) in integral equation approach, but we propose a Nyström scheme to solve it. The Nyström scheme has several merits compared to the MoM, but it has not been used to analyze the EMC problems with very thin conductors. A numerical example is presented to demonstrate the scheme and good results have been obtained.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114981663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276921
Yong Liu, Kai Liu, Wenbin Li, Huan Zheng
This paper presents a design of the low noise induction magnetometer (IM) to measure the stray magnetic field for online monitoring of the induction machine. The frequency response and noise model of the IM are analyzed. An optimal IM is designed and developed, with the linear frequency response from 1Hz to 10kHz, which makes the IM be capable of time-domain and frequency-domain applications. The noise level of the IM is 2pT/VHz at 10Hz, 0.7fT/VHz at 20kHz. The magnetic fields during the safe and fault conditions of the induction generator are tested. The measurement results confirm that the low noise IM is efficient for online monitoring of the induction machine.
{"title":"Using low noise induction magnetometer for online monitoring of the induction machine","authors":"Yong Liu, Kai Liu, Wenbin Li, Huan Zheng","doi":"10.1109/EDAPS.2017.8276921","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276921","url":null,"abstract":"This paper presents a design of the low noise induction magnetometer (IM) to measure the stray magnetic field for online monitoring of the induction machine. The frequency response and noise model of the IM are analyzed. An optimal IM is designed and developed, with the linear frequency response from 1Hz to 10kHz, which makes the IM be capable of time-domain and frequency-domain applications. The noise level of the IM is 2pT/VHz at 10Hz, 0.7fT/VHz at 20kHz. The magnetic fields during the safe and fault conditions of the induction generator are tested. The measurement results confirm that the low noise IM is efficient for online monitoring of the induction machine.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133886654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277016
Xixiong Wei, Feng Zhuang, Zheng Zhou, Weijing Wu, Xiaoyu Ma, W. Deng
In this paper, a simple and physical-based extraction technique for model card in metal oxide thin-film transistors (TFTs) is proposed by fitting measured curves with RPI model. Using the obtained model card, we implemented the RPI model in circuit simulators. The single group of model parameters was extracted by using the algorithm of parameter extraction. By fitting measured curve with RPI model, the model card can be obtained. The validity of the circuit is verified by comparisons with measured data and the simulation results. The results indicate that it is a valuable tool for circuit design.
{"title":"Extraction of model card in metal oxide thin-film transistor by fitting measured curves with RPI model and simulation of circuits","authors":"Xixiong Wei, Feng Zhuang, Zheng Zhou, Weijing Wu, Xiaoyu Ma, W. Deng","doi":"10.1109/EDAPS.2017.8277016","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277016","url":null,"abstract":"In this paper, a simple and physical-based extraction technique for model card in metal oxide thin-film transistors (TFTs) is proposed by fitting measured curves with RPI model. Using the obtained model card, we implemented the RPI model in circuit simulators. The single group of model parameters was extracted by using the algorithm of parameter extraction. By fitting measured curve with RPI model, the model card can be obtained. The validity of the circuit is verified by comparisons with measured data and the simulation results. The results indicate that it is a valuable tool for circuit design.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133821134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276915
Yong Zhang, Tianhao Ren, W. Zhao, Shuang Liu, Oupeng Li
In this paper, we discuss the key technologies of solid state devices on terahertz, including the modeling technology of the semiconductor devices, design of the key components and the fabrication technology.
本文讨论了太赫兹固态器件的关键技术，包括半导体器件的建模技术、关键元件的设计和制造技术。
{"title":"Key technologies of solid state devices on terahertz","authors":"Yong Zhang, Tianhao Ren, W. Zhao, Shuang Liu, Oupeng Li","doi":"10.1109/EDAPS.2017.8276915","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276915","url":null,"abstract":"In this paper, we discuss the key technologies of solid state devices on terahertz, including the modeling technology of the semiconductor devices, design of the key components and the fabrication technology.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132996603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276947
Yu Fu, Yuehang Xu, R. Xu, Jianjun Zhou, Y. Kong
A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.
{"title":"Physical-based simulation of DC characteristics of hydrogen-terminated diamond MOSFETs","authors":"Yu Fu, Yuehang Xu, R. Xu, Jianjun Zhou, Y. Kong","doi":"10.1109/EDAPS.2017.8276947","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276947","url":null,"abstract":"A diamond film-based metal-semiconductor field effect transistor (MOSFET) physical-based simulation model is proposed in this paper. The DC characteristics of the proposed diamond MOSFET are analyzed by Silvaco Atlas TCAD tools. Transfer and I-V characteristics are investigated, the simulation result shows that the saturation drain current is more than 130mA/mm by the forward gate bias VGS of −4V. In total, our simulation results generally agree with the experimental results, it proves that our work is useful to investigate and predict the diamond FETs.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130584742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8276994
Yu-Chang Hsieh, Chung-hao Chen, Pao-Nan Lee, Chen-Chao Wang
A low cost and high density through-silicon vias (TSV) on high resistivity silicon (HR-Si) wafer is presented. By skip of isolation layer between TSV and HR-Si wafer, the proposed TSV provides higher via density and resolves polymer residual at the bottom of TSV. To ensure electrical performance of proposed TSV, a series of test items such as transmission line, 3D inductor and TSV chain are designed and fabricated on HR-Si wafer. The electrical performance is compared to original TSV that has isolation layer between TSV and HR-Si wafer by measurement approach. Measurement results show TSV w/o isolation has even better performance as compared to TSV with isolation on the inductor's quality factor, transmission line loss and harmonics characteristic.
{"title":"Performance comparison and analysis by electrical measurement for through-silicon vias (TSV) in wafer level package","authors":"Yu-Chang Hsieh, Chung-hao Chen, Pao-Nan Lee, Chen-Chao Wang","doi":"10.1109/EDAPS.2017.8276994","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8276994","url":null,"abstract":"A low cost and high density through-silicon vias (TSV) on high resistivity silicon (HR-Si) wafer is presented. By skip of isolation layer between TSV and HR-Si wafer, the proposed TSV provides higher via density and resolves polymer residual at the bottom of TSV. To ensure electrical performance of proposed TSV, a series of test items such as transmission line, 3D inductor and TSV chain are designed and fabricated on HR-Si wafer. The electrical performance is compared to original TSV that has isolation layer between TSV and HR-Si wafer by measurement approach. Measurement results show TSV w/o isolation has even better performance as compared to TSV with isolation on the inductor's quality factor, transmission line loss and harmonics characteristic.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121854405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-01DOI: 10.1109/EDAPS.2017.8277006
Lingrong Kong, Shitao Chen
A scheme of designing laser pulses for controlling discrete quantum states has been proposed in the reference [1]. In this paper, the Time-Domain Spectral Element (SETD) method is used to solving the Maxwell-Schrödinger coupling equation system for 3D-1D physical problem. In order to facilitate the solution of this coupling process, the Hamiltonian by applying the length gauge is used here. The accuracy of the simulation results are demonstrated by the comparison with the reference [1].
{"title":"Spectral element time-domain method simulation of the Maxwell-Schrödinger system","authors":"Lingrong Kong, Shitao Chen","doi":"10.1109/EDAPS.2017.8277006","DOIUrl":"https://doi.org/10.1109/EDAPS.2017.8277006","url":null,"abstract":"A scheme of designing laser pulses for controlling discrete quantum states has been proposed in the reference [1]. In this paper, the Time-Domain Spectral Element (SETD) method is used to solving the Maxwell-Schrödinger coupling equation system for 3D-1D physical problem. In order to facilitate the solution of this coupling process, the Hamiltonian by applying the length gauge is used here. The accuracy of the simulation results are demonstrated by the comparison with the reference [1].","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125791237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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