首页 > 最新文献

Electro International, 1991最新文献

英文 中文
An Overview Of Computer Integrated Manufacturing 计算机集成制造概述
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718241
L.A. Derrick, D. Telfer
In today's manufacturing environment, competition and technological advances affect both products and processes. A major management challenge will be to select the proper technologies to make the most efficient use of resources and gain a competitive advantage. Companies must quickly respond to market changes and customer demands in terms of product features, availability, and price. At the same time, costs must be kept low and quality high in design and production. These will not be achieved by technology alone. In addition to organizational changes and new management approaches, computer integrated manufacturing will play a vital role in the future of production environments. The recognition of information from the activities of many varied areas of an organization is important. These include design and manufacturing engineering, production and process planning, marketing, field service, finance, information systems, materials control, operations and distribution. The volume of data from these areas and the need for information collection, storage, and handling resulted in automation via computer technology. However, a by-product of automation is a large number of stand-alone islands incorporating computer technologies. This creates a severe problem for an enterprise because data is stored in multiple locations and changed by many different people, which results in a loss of data integrity. Transfer from one piece of equipment to another is often manual. This is inefficient and allows for many errors to result.
在今天的制造环境中,竞争和技术进步影响着产品和过程。一个主要的管理挑战将是选择适当的技术以最有效地利用资源并获得竞争优势。公司必须在产品特性、可用性和价格方面快速响应市场变化和客户需求。同时,在设计和生产中必须保持低成本和高质量。这些不是单靠技术就能实现的。除了组织变革和新的管理方法,计算机集成制造将在未来的生产环境中发挥至关重要的作用。从组织的许多不同领域的活动中识别信息是很重要的。这些包括设计和制造工程、生产和工艺规划、市场营销、现场服务、财务、信息系统、材料控制、运营和分销。来自这些领域的数据量以及对信息收集、存储和处理的需求导致了计算机技术的自动化。然而,自动化的副产品是大量采用计算机技术的独立岛屿。这给企业带来了严重的问题,因为数据存储在多个位置,并由许多不同的人更改,从而导致数据完整性的损失。从一件设备转移到另一件设备通常是手工的。这是低效的,并且会导致许多错误。
{"title":"An Overview Of Computer Integrated Manufacturing","authors":"L.A. Derrick, D. Telfer","doi":"10.1109/ELECTR.1991.718241","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718241","url":null,"abstract":"In today's manufacturing environment, competition and technological advances affect both products and processes. A major management challenge will be to select the proper technologies to make the most efficient use of resources and gain a competitive advantage. Companies must quickly respond to market changes and customer demands in terms of product features, availability, and price. At the same time, costs must be kept low and quality high in design and production. These will not be achieved by technology alone. In addition to organizational changes and new management approaches, computer integrated manufacturing will play a vital role in the future of production environments. The recognition of information from the activities of many varied areas of an organization is important. These include design and manufacturing engineering, production and process planning, marketing, field service, finance, information systems, materials control, operations and distribution. The volume of data from these areas and the need for information collection, storage, and handling resulted in automation via computer technology. However, a by-product of automation is a large number of stand-alone islands incorporating computer technologies. This creates a severe problem for an enterprise because data is stored in multiple locations and changed by many different people, which results in a loss of data integrity. Transfer from one piece of equipment to another is often manual. This is inefficient and allows for many errors to result.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"232 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123647592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Speed Clocked FIFOs Yield Lower System Cost And Higher Performance 高速时钟fifo降低了系统成本,提高了性能
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718188
M. Shamshirian, B. Nanduri
The proliferation of high speed RISC and CISC microprocessors has resulted in an increased demand for high speed data buffers. Standard First-in-First-Out (FIFO) memories have fulfilled a portion of the system's speed requirements, however new systems require faster and easier to design devices. First-in-First-Out (FIFO) memories were first introduced over five years ago. Since their introduction, FIFOs have evolved from a register based cell array to a dual ported RAM cell array. This evolution resulted in a major performance improvement. In recent years, many new FIFOs have been introduced. Aside from higher density version of the existing parts, manufacturers introduced parallel to serial, serial to parallel and bidirectional FIFOs. But perhaps the most important introduction was the Synchronous (Clocked) FIFO. These devices have been designed to meet current and future high speed data buffering requirements.
高速RISC和CISC微处理器的激增导致对高速数据缓冲区的需求增加。标准的先进先出(FIFO)存储器已经满足了系统速度要求的一部分,但是新系统要求更快,更容易设计器件。先进先出(FIFO)存储器在五年前首次被引入。自引入以来,fifo已经从基于寄存器的单元阵列发展到双端口RAM单元阵列。这种演变导致了重大的性能改进。近年来,引入了许多新的fifo。除了现有零件的高密度版本外,制造商还引入了并行到串行,串行到并行和双向fifo。但也许最重要的引入是同步(时钟)FIFO。这些设备的设计是为了满足当前和未来的高速数据缓冲要求。
{"title":"High Speed Clocked FIFOs Yield Lower System Cost And Higher Performance","authors":"M. Shamshirian, B. Nanduri","doi":"10.1109/ELECTR.1991.718188","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718188","url":null,"abstract":"The proliferation of high speed RISC and CISC microprocessors has resulted in an increased demand for high speed data buffers. Standard First-in-First-Out (FIFO) memories have fulfilled a portion of the system's speed requirements, however new systems require faster and easier to design devices. First-in-First-Out (FIFO) memories were first introduced over five years ago. Since their introduction, FIFOs have evolved from a register based cell array to a dual ported RAM cell array. This evolution resulted in a major performance improvement. In recent years, many new FIFOs have been introduced. Aside from higher density version of the existing parts, manufacturers introduced parallel to serial, serial to parallel and bidirectional FIFOs. But perhaps the most important introduction was the Synchronous (Clocked) FIFO. These devices have been designed to meet current and future high speed data buffering requirements.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123366379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microengineered Silicon Pressure Sensors 微工程硅压力传感器
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718185
D. W. Burns, P. Dupuis
{"title":"Microengineered Silicon Pressure Sensors","authors":"D. W. Burns, P. Dupuis","doi":"10.1109/ELECTR.1991.718185","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718185","url":null,"abstract":"","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115809520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Power, High Speed Si And GaAs Optical Switching Devices Utilizing Semiconductor Lasers As An Optical Source 利用半导体激光器作为光源的高功率、高速Si和GaAs光开关器件
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718180
P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel
High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.
高功率、高速度、光激活开关仅采用半导体器件,体积小、效率高、成本合理。它们由一个2D激光二极管阵列组成,该阵列激活具有集成光学端口的半导体开关。有几种类型的半导体开关器件是有用的。具有长载流子寿命的Si PIN二极管提供了连续波切换千瓦级射频功率的手段,而脉冲激光二极管阵列只需要几瓦的平均功率。直流偏置,Si PIN二极管也可用于控制高达一兆瓦的功率进入短ns爆发的负载。脉冲偏置砷化镓器件,利用锁定现象,用于控制高达兆瓦的功率进入短ns脉冲负载。本文将对这些类型的交换机进行概述。
{"title":"High Power, High Speed Si And GaAs Optical Switching Devices Utilizing Semiconductor Lasers As An Optical Source","authors":"P. Stabile, A. Rosen, D. Gilbert, F. Zutavern, G. Loubriel","doi":"10.1109/ELECTR.1991.718180","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718180","url":null,"abstract":"High power, high speed, optically activated switches incorporating only semiconductor devices are small, efficient, and reasonable in cost. They consist of a 2D laser diode array activating a semiconductor switch with an integrated optical port. Several types of semiconductor switch devices are useful. Si PIN diodes with long carrier lifetime provide the means for cw switching kilo-watts of rf power with pulsed laser diode arrays which require only a few watts of average power. DC biased, Si PIN diodes are also useful in controlling up to a mega-watt of power into a load for short ns bursts. Pulsed biased GaAs devices, utilizing the phenomenon of lock-on, are used for controlling up to mega-watts of power into a load for short ns bursts. An overview of these types of switches will be described.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126608267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Data Acquisition And Instrument Control With Personal Computers 个人计算机的数据采集和仪表控制
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718288
R. Almgren
{"title":"Data Acquisition And Instrument Control With Personal Computers","authors":"R. Almgren","doi":"10.1109/ELECTR.1991.718288","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718288","url":null,"abstract":"","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121297051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Potential Role Of Maglev In Short-Haul Airline Operations 磁悬浮在短途航空运营中的潜在作用
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718284
L. Johnson
Intercity travel is predominately by commercial air transport. However, airports are becoming increasingly congested at a time when there is often substantial local opposition to the expansion of airport infrastructure because of the environmental impacts. This paper explores the potential for integrating high-speed maglev systeras into the airport infrastructure, but more importantly into airline operations.
城际旅行主要是商业航空运输。然而,机场正变得越来越拥挤,而当地往往因为环境影响而强烈反对扩建机场基础设施。本文探讨了将高速磁悬浮系统整合到机场基础设施中的潜力,但更重要的是整合到航空公司运营中。
{"title":"The Potential Role Of Maglev In Short-Haul Airline Operations","authors":"L. Johnson","doi":"10.1109/ELECTR.1991.718284","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718284","url":null,"abstract":"Intercity travel is predominately by commercial air transport. However, airports are becoming increasingly congested at a time when there is often substantial local opposition to the expansion of airport infrastructure because of the environmental impacts. This paper explores the potential for integrating high-speed maglev systeras into the airport infrastructure, but more importantly into airline operations.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132719847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microengineered Actuators: A Review 微工程致动器:综述
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718183
W. Tang
In the past decade, numerous microengineered mechanical devices have been fabricated successfully by exploiting and adapting the well-established integrated-circuit technology. Advancements in this field are motivated by potential applications in batch-fabricated integrated sensors and silicon-based microactuators. These devices promise new capabilities, as well as improved performance-to-cost ratio over conventional hybrid-manufactured devices. Micromachined transducers that can be fabricated compatibly with an integrated circuit process are the building blocks for integrated microsystems with added functionality, such as closed-loop control and signal conditioning. Furthermore, miniaturized transducers are powerful tools for research in the micron-sized domain in the physical, chemical and biomedical fields. This paper reviews the development of microengineered actuators (microactuators) based on crystalline silicon and polycrystalline silicon (polysilicon) as the structural materials. Several microactuator examples are first described. Various actuation methods adapted for micro-sized mechanical devices and fabrication techniques are evaluated. Finally, the direction for future research in light of the present challenges and potential applications of microactuators are considered.
在过去的十年中,许多微工程机械设备通过开发和适应成熟的集成电路技术而成功地制造出来。该领域的进步是由批量制造集成传感器和硅基微致动器的潜在应用驱动的。与传统的混合制造设备相比,这些设备承诺了新的功能,以及更高的性能与成本比。可以与集成电路工艺兼容制造的微机械换能器是集成微系统的基石,具有附加功能,例如闭环控制和信号调理。此外,小型化换能器是研究微米级物理、化学和生物医学领域的有力工具。本文综述了以晶体硅和多晶硅为结构材料的微工程致动器的研究进展。首先描述了几个微执行器的例子。评估了适用于微型机械装置的各种驱动方法和制造技术。最后,针对微致动器目前面临的挑战和潜在的应用前景,展望了未来的研究方向。
{"title":"Microengineered Actuators: A Review","authors":"W. Tang","doi":"10.1109/ELECTR.1991.718183","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718183","url":null,"abstract":"In the past decade, numerous microengineered mechanical devices have been fabricated successfully by exploiting and adapting the well-established integrated-circuit technology. Advancements in this field are motivated by potential applications in batch-fabricated integrated sensors and silicon-based microactuators. These devices promise new capabilities, as well as improved performance-to-cost ratio over conventional hybrid-manufactured devices. Micromachined transducers that can be fabricated compatibly with an integrated circuit process are the building blocks for integrated microsystems with added functionality, such as closed-loop control and signal conditioning. Furthermore, miniaturized transducers are powerful tools for research in the micron-sized domain in the physical, chemical and biomedical fields. This paper reviews the development of microengineered actuators (microactuators) based on crystalline silicon and polycrystalline silicon (polysilicon) as the structural materials. Several microactuator examples are first described. Various actuation methods adapted for micro-sized mechanical devices and fabrication techniques are evaluated. Finally, the direction for future research in light of the present challenges and potential applications of microactuators are considered.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129010791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
MAX EPLD Family: PAL Speed to FPGA Density MAX EPLD家族:PAL速度到FPGA密度
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718235
B. Jorgens
{"title":"MAX EPLD Family: PAL Speed to FPGA Density","authors":"B. Jorgens","doi":"10.1109/ELECTR.1991.718235","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718235","url":null,"abstract":"","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127693173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A PC-Based JTAG Test Environment 一个基于pc的JTAG测试环境
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718271
J. Marshall
In order for boundary scan to become useful it must be implemented at all levels of electronics manufacturing. Widespread use can only be achieved once component and test technology providers introduce products that manufacturers can obtain at a reasonable cost. This paper speaks to the design of boundary scan environments. It addresses some of the electronic, software and mechanical considerations of using such test environments. An example of such a test environment is given.
为了使边界扫描变得有用,它必须在电子制造的各个层次上实施。只有当组件和测试技术提供商推出制造商能够以合理成本获得的产品时,才能实现广泛使用。本文讨论了边界扫描环境的设计。它解决了使用这种测试环境的一些电子、软件和机械方面的考虑。给出了这样一个测试环境的实例。
{"title":"A PC-Based JTAG Test Environment","authors":"J. Marshall","doi":"10.1109/ELECTR.1991.718271","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718271","url":null,"abstract":"In order for boundary scan to become useful it must be implemented at all levels of electronics manufacturing. Widespread use can only be achieved once component and test technology providers introduce products that manufacturers can obtain at a reasonable cost. This paper speaks to the design of boundary scan environments. It addresses some of the electronic, software and mechanical considerations of using such test environments. An example of such a test environment is given.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131654464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Solid-State Electronic Linear Adaptive Neuron With Electrically Reprogrammabe Synapses 具有电可编程突触的固态电子线性自适应神经元
Pub Date : 1991-04-16 DOI: 10.1109/ELECTR.1991.718281
C.-Y.M. Chen, M. White, M. French
This paper addresses the implementation of a semiconductor device used to siniulate the synaptic interconnection in hardware realization of neural network systems. We have incorporated these modifiable synaptic weights into a solid-state electronic linear adaptive neuron with a Widrow-Hoff's delta learning rule as the updating algorithm to investigate the electrical performance of these programmable synapses. The experimental and simulation results are also presented in the paper.
本文讨论了在神经网络系统硬件实现中用于模拟突触互连的半导体器件的实现。我们将这些可修改的突触权重整合到固态电子线性自适应神经元中,并使用Widrow-Hoff's delta学习规则作为更新算法来研究这些可编程突触的电学性能。最后给出了实验和仿真结果。
{"title":"A Solid-State Electronic Linear Adaptive Neuron With Electrically Reprogrammabe Synapses","authors":"C.-Y.M. Chen, M. White, M. French","doi":"10.1109/ELECTR.1991.718281","DOIUrl":"https://doi.org/10.1109/ELECTR.1991.718281","url":null,"abstract":"This paper addresses the implementation of a semiconductor device used to siniulate the synaptic interconnection in hardware realization of neural network systems. We have incorporated these modifiable synaptic weights into a solid-state electronic linear adaptive neuron with a Widrow-Hoff's delta learning rule as the updating algorithm to investigate the electrical performance of these programmable synapses. The experimental and simulation results are also presented in the paper.","PeriodicalId":339281,"journal":{"name":"Electro International, 1991","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133659626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Electro International, 1991
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1