1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619113
R. Herrick, Y.M. Cheng, P. Petroff
VCSELs are increasingly being adopted for use in data communications products, with numerous other applications being explored. Their low threshold current, circular beam, and excellent temperature stability are advantageous for many applications. While excellent lifetimes have been reported, lower early failure rates at high temperatures and high powers would be desirable, so we seek to better understand the aging process. Our past work has shown that dislocations grow not only in the active region (as expected) but also in the p-DBR. We have proposed that high-energy spontaneous emission from the active region is a driving force for degradation in the p-mirror layers. In the past year, we have been concentrating on developing new techniques to allow us to examine the VCSELs in plan view, and explore the radial extent of the degradation.
{"title":"Failure analysis of 850 nm proton-implanted VCSELs","authors":"R. Herrick, Y.M. Cheng, P. Petroff","doi":"10.1109/LEOSST.1997.619113","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619113","url":null,"abstract":"VCSELs are increasingly being adopted for use in data communications products, with numerous other applications being explored. Their low threshold current, circular beam, and excellent temperature stability are advantageous for many applications. While excellent lifetimes have been reported, lower early failure rates at high temperatures and high powers would be desirable, so we seek to better understand the aging process. Our past work has shown that dislocations grow not only in the active region (as expected) but also in the p-DBR. We have proposed that high-energy spontaneous emission from the active region is a driving force for degradation in the p-mirror layers. In the past year, we have been concentrating on developing new techniques to allow us to examine the VCSELs in plan view, and explore the radial extent of the degradation.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122585384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619109
R. Bockstaele, C. Sys, J. Blondelle, H. de Neve, B. Dhoedt, I. Moerman, P. van Daele, R. Baets
Summary form only given. Microcavity LEDs were optimised for optical interconnect requirements. Overall quantum efficiency of up to 4.3% into a numerical aperture of 0.5 and a FWHM beam divergence angle of 105 degrees at a drive current of 1 mA was achieved. Microcavity LEDs with one gold and one GaAs-AlAs DBR-mirror have been optimized for efficiency into a limited NA of 0.5. Simulations indicate that an efficiency of 8% can be achieved. Experimental devices give a best value of 3.7%.
{"title":"Microcavity LEDs with an overall efficiency of 4% into a numerical aperture of 0.5","authors":"R. Bockstaele, C. Sys, J. Blondelle, H. de Neve, B. Dhoedt, I. Moerman, P. van Daele, R. Baets","doi":"10.1109/LEOSST.1997.619109","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619109","url":null,"abstract":"Summary form only given. Microcavity LEDs were optimised for optical interconnect requirements. Overall quantum efficiency of up to 4.3% into a numerical aperture of 0.5 and a FWHM beam divergence angle of 105 degrees at a drive current of 1 mA was achieved. Microcavity LEDs with one gold and one GaAs-AlAs DBR-mirror have been optimized for efficiency into a limited NA of 0.5. Simulations indicate that an efficiency of 8% can be achieved. Experimental devices give a best value of 3.7%.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123163486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619160
W. Sohler, H. Herrmann, K. Schafer
By combining acousto-optical polarization converters and passive polarization splitters in various ways on a single (X-cut) LiNbO/sub 3/ substrate a whole family of tunable integrated optical WDM-devices has been developed. Among them are wavelength filters, wavelength-selective switches and add-drop multiplexers. They offer fast and broad tunability. Due to their unique multi-wavelength operation capability simplified architectures of optical cross-connects and add-drop nodes can be realized. By fabricating these devices in erbium-diffusion doped LiNbO/sub 3/ internal amplification can be added by optical pumping. Moreover, by optical feedback in a cavity even lasing can be achieved with a tunable emission wavelength. In this contribution, the current state-of-the-art of tunable, acousto-optical devices in LiNbO/sub 3/ is reviewed, illustrated by a number of selected examples.
{"title":"Tunable acousto-optical filters, multiplexers and lasers in LiNbO/sub 3/","authors":"W. Sohler, H. Herrmann, K. Schafer","doi":"10.1109/LEOSST.1997.619160","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619160","url":null,"abstract":"By combining acousto-optical polarization converters and passive polarization splitters in various ways on a single (X-cut) LiNbO/sub 3/ substrate a whole family of tunable integrated optical WDM-devices has been developed. Among them are wavelength filters, wavelength-selective switches and add-drop multiplexers. They offer fast and broad tunability. Due to their unique multi-wavelength operation capability simplified architectures of optical cross-connects and add-drop nodes can be realized. By fabricating these devices in erbium-diffusion doped LiNbO/sub 3/ internal amplification can be added by optical pumping. Moreover, by optical feedback in a cavity even lasing can be achieved with a tunable emission wavelength. In this contribution, the current state-of-the-art of tunable, acousto-optical devices in LiNbO/sub 3/ is reviewed, illustrated by a number of selected examples.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125591342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619247
W. Van Der Stricht, I. Moerman, P. Demeester, E. Thrush, J. Crawley
Recently the group III-nitrides (In,Ga)N have attracted much attention because of the high potential for the fabrication of light emitting devices operating in the red to ultraviolet wavelength range. Despite the recent success in realizing devices, only few reports have been made on growth of InGaN. In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapor phase epitaxy in a close spaced vertical rotating disk reactor is investigated. The effect of the growth temperature, V/III ratio and rotation speed is investigated. Some early results on InGaN/GaN quantum well structures are also discussed.
{"title":"MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells","authors":"W. Van Der Stricht, I. Moerman, P. Demeester, E. Thrush, J. Crawley","doi":"10.1109/LEOSST.1997.619247","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619247","url":null,"abstract":"Recently the group III-nitrides (In,Ga)N have attracted much attention because of the high potential for the fabrication of light emitting devices operating in the red to ultraviolet wavelength range. Despite the recent success in realizing devices, only few reports have been made on growth of InGaN. In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapor phase epitaxy in a close spaced vertical rotating disk reactor is investigated. The effect of the growth temperature, V/III ratio and rotation speed is investigated. Some early results on InGaN/GaN quantum well structures are also discussed.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114402347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619251
K. Domen, K. Horino, A. Kuramata, T. Tanahashi
Since successful lasing has been reported for wurtzite (WZ) GaN and related materials, researchers are now interested in exploring the possibility of reducing the threshold current density (Jth). In this paper, we focus on this point by calculating the optical gain. We discuss the reduction in Jth on the c-plane, and we investigate the anisotropic strain effect on the (11~00) plane.
{"title":"Optical gain in GaN based semiconductors","authors":"K. Domen, K. Horino, A. Kuramata, T. Tanahashi","doi":"10.1109/LEOSST.1997.619251","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619251","url":null,"abstract":"Since successful lasing has been reported for wurtzite (WZ) GaN and related materials, researchers are now interested in exploring the possibility of reducing the threshold current density (Jth). In this paper, we focus on this point by calculating the optical gain. We discuss the reduction in Jth on the c-plane, and we investigate the anisotropic strain effect on the (11~00) plane.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123007916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619197
J. Heerlein, M. Grabherr, R. Jager, P. Unger
We report on results of wet oxidized narrow stripe GaAs QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 3-11 /spl mu/m achieved single mode output powers of up to 240 mW in continuous wave operation at room temperature.
{"title":"Improved performance of single-mode lasers by using native-oxide lateral-confinement layers","authors":"J. Heerlein, M. Grabherr, R. Jager, P. Unger","doi":"10.1109/LEOSST.1997.619197","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619197","url":null,"abstract":"We report on results of wet oxidized narrow stripe GaAs QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 3-11 /spl mu/m achieved single mode output powers of up to 240 mW in continuous wave operation at room temperature.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123681163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619114
K. Lascola, W. Yuen, C. Chang-Hasnain
Thermal effects are well known to limit peak output power and efficiency of vertical cavity surface emitting lasers (VCSELs). However, they are often disregarded in VCSEL design. In this work, using a simple thermal model, we consider the effect of device structure (both geometry and layer composition) on the thermal properties of VCSELs and verify the validity of the model by comparing with experimental results.
{"title":"Structural dependence of the thermal resistance of vertical cavity surface emitting lasers","authors":"K. Lascola, W. Yuen, C. Chang-Hasnain","doi":"10.1109/LEOSST.1997.619114","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619114","url":null,"abstract":"Thermal effects are well known to limit peak output power and efficiency of vertical cavity surface emitting lasers (VCSELs). However, they are often disregarded in VCSEL design. In this work, using a simple thermal model, we consider the effect of device structure (both geometry and layer composition) on the thermal properties of VCSELs and verify the validity of the model by comparing with experimental results.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"491 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123563199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619100
L. Goldstein, C. Fortin, P. Salet, A. Plais, J. Jacquet, A. Rocher, C. Poussou
Long wavelength (1.3/1.5 /spl mu/m) GaAs-GaAlAs vertical cavity surface emitting lasers (VCSEL) with Bragg mirror (GaAs/AlAs) wafer fused on InP substrate exhibits low threshold current and cw operation at room temperature. However the wafer fusion technique requires additional substrate, epitaxy and technological steps. Furthermore the wafer fusion is difficult to achieve on a full 2 inches substrate. A new approach is proposed which consists in the metamorphic growth of GaAs-AlAs Bragg mirrors on InP by gas source molecular beam epitaxy.
{"title":"Metamorphic GaAs/AlAs Bragg mirrors deposited on InP for 1.3/1.55 /spl mu/m vertical cavity losers","authors":"L. Goldstein, C. Fortin, P. Salet, A. Plais, J. Jacquet, A. Rocher, C. Poussou","doi":"10.1109/LEOSST.1997.619100","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619100","url":null,"abstract":"Long wavelength (1.3/1.5 /spl mu/m) GaAs-GaAlAs vertical cavity surface emitting lasers (VCSEL) with Bragg mirror (GaAs/AlAs) wafer fused on InP substrate exhibits low threshold current and cw operation at room temperature. However the wafer fusion technique requires additional substrate, epitaxy and technological steps. Furthermore the wafer fusion is difficult to achieve on a full 2 inches substrate. A new approach is proposed which consists in the metamorphic growth of GaAs-AlAs Bragg mirrors on InP by gas source molecular beam epitaxy.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128333943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619079
Y. Sugimoto, K. Kasahara
Research and development of vertical-cavity surface-emitting lasers (VCSELs) has made rapid progress in recent years. VCSEL array link modules have been developed with increasing speed by American consortiums such as OETC and POLO. On the other hand, high-performance VCSELs, such as low-threshold or high wall-plug efficiency ones, are being developed using AlAs selective oxidation. With this background, we describe the future prospects of VCSELs from an industrial viewpoint. The topics discussed include: reliability; low-voltage and low-power operations; and module assembly techniques. The authors conclude that the VCSEL is a promising device for achieving optical interconnections.
{"title":"Future prospects of VCSELs: industrial view","authors":"Y. Sugimoto, K. Kasahara","doi":"10.1109/LEOSST.1997.619079","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619079","url":null,"abstract":"Research and development of vertical-cavity surface-emitting lasers (VCSELs) has made rapid progress in recent years. VCSEL array link modules have been developed with increasing speed by American consortiums such as OETC and POLO. On the other hand, high-performance VCSELs, such as low-threshold or high wall-plug efficiency ones, are being developed using AlAs selective oxidation. With this background, we describe the future prospects of VCSELs from an industrial viewpoint. The topics discussed include: reliability; low-voltage and low-power operations; and module assembly techniques. The authors conclude that the VCSEL is a promising device for achieving optical interconnections.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129979337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619157
Hsiao-Yun Yu, D. Mahgerefteh, Pak Cho, J. Goldhar, G.L. Burdage
We demonstrated a novel SOA-fiber-grating wavelength converter for RZ data that has a better frequency response than a single SOA wavelength converter at the same optical power level. The SOA-fiber-grating wavelength converter uses a single amplifier and requires no interferometers. The principle of this device is described as follows: Consider an input pump beam at /spl lambda//sub 1/ and a CW probing signal at /spl lambda//sub 2/ coincident in the amplifier. The pump beam partially depletes the gain of the amplifier. This rapidly increases the refractive index of the semiconductor and chirps the CW signal at /spl lambda//sub 1/ towards the red, There is a smaller, blue chirp associated with the slower recovery of the amplifier's gain. The probing signal's wavelength, /spl lambda//sub 2/, is adjusted such that the fiber grating passes the red chirped portion of the CW signal and blocks its unchanged spectral components. We use a more compact, fiber grating step filter than previous devices which selects the phase modulated portions of the probing signal more effectively.
{"title":"Improved frequency response of a semiconductor-optical-amplifier wavelength converter using a fiber Bragg grating","authors":"Hsiao-Yun Yu, D. Mahgerefteh, Pak Cho, J. Goldhar, G.L. Burdage","doi":"10.1109/LEOSST.1997.619157","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619157","url":null,"abstract":"We demonstrated a novel SOA-fiber-grating wavelength converter for RZ data that has a better frequency response than a single SOA wavelength converter at the same optical power level. The SOA-fiber-grating wavelength converter uses a single amplifier and requires no interferometers. The principle of this device is described as follows: Consider an input pump beam at /spl lambda//sub 1/ and a CW probing signal at /spl lambda//sub 2/ coincident in the amplifier. The pump beam partially depletes the gain of the amplifier. This rapidly increases the refractive index of the semiconductor and chirps the CW signal at /spl lambda//sub 1/ towards the red, There is a smaller, blue chirp associated with the slower recovery of the amplifier's gain. The probing signal's wavelength, /spl lambda//sub 2/, is adjusted such that the fiber grating passes the red chirped portion of the CW signal and blocks its unchanged spectral components. We use a more compact, fiber grating step filter than previous devices which selects the phase modulated portions of the probing signal more effectively.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121766955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
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