Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772282
P. Schuh, H. Sledzik, R. Reber, A. Fleckenstein, R. Leberer, M. Oppermann, R. Quay, F. van Raay, M. Seelmann-Eggebert, R. Kiefer, M. Mikulla
Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. The measured noise figure of the low noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multilayer LTCC technology.
未来有源阵列天线中下一代T/ r模块的放大器是基于新型AlGaN/GaN HEMT结构的单片集成电路(MMIC)。低噪声和功率放大器都是为x波段频率设计的。采用新颖的过孔微带技术设计、模拟和制造了mmic。驱动放大器(DA)的输出功率为6.8 W (38 dBm)，高功率放大器(HPA)的输出功率为20 W (43 dBm)。低噪声放大器(LNA)的实测噪声系数在1.5 dB范围内。基于多层LTCC技术，设计了搭载GaN mmic的T/ r模块前端。
{"title":"GaN MMIC based T/R-Module Front-End for X-Band Applications","authors":"P. Schuh, H. Sledzik, R. Reber, A. Fleckenstein, R. Leberer, M. Oppermann, R. Quay, F. van Raay, M. Seelmann-Eggebert, R. Kiefer, M. Mikulla","doi":"10.1109/EMICC.2008.4772282","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772282","url":null,"abstract":"Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. The measured noise figure of the low noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multilayer LTCC technology.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122696967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772299
W. Woods, Guoan Wang, H. Ding
As operating frequencies increase in state-of-the-art wireless designs, highly accurate modelling of critical interconnect paths routed over silicon is crucial for first-pass design success [1]. With this in mind, the interconnect stack of an IBM silicon germanium (SiGe) process incorporating a TSV ground supply network was modelled with model accuracy and efficiency as the goals. A unique modelling methodology for assigning the values of silicon skin-effect circuit model elements is discussed. The final model is verified with hardware measurements and found to accurately estimate the frequency-dependent resistance, capacitance, and inductance of a single line over silicon at microwave frequencies in a compact, efficient, pre-layout circuit model that includes the effects of process variation.
{"title":"Microwave Compact Passive Circuit Model of Isolated Interconnect over a Silicon Substrate with a Through-Silicon Via (TSV) Ground Supply Network","authors":"W. Woods, Guoan Wang, H. Ding","doi":"10.1109/EMICC.2008.4772299","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772299","url":null,"abstract":"As operating frequencies increase in state-of-the-art wireless designs, highly accurate modelling of critical interconnect paths routed over silicon is crucial for first-pass design success [1]. With this in mind, the interconnect stack of an IBM silicon germanium (SiGe) process incorporating a TSV ground supply network was modelled with model accuracy and efficiency as the goals. A unique modelling methodology for assigning the values of silicon skin-effect circuit model elements is discussed. The final model is verified with hardware measurements and found to accurately estimate the frequency-dependent resistance, capacitance, and inductance of a single line over silicon at microwave frequencies in a compact, efficient, pre-layout circuit model that includes the effects of process variation.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126715971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772354
F. Scappaviva, R. Cignani, C. Florian, G. Vannini, F. Filicori, M. Feudale
This paper describes the design of a GaAs monolithic high power amplifier at Ku band. The chip delivers about 40 dBm of saturated output power, in CW operating conditions, at 11.7 GHz central frequency, with 17% of bandwidth. The saturated power gain is 12.4 dB with 2 dB gain flatness across the application bandwidth while the chip power added efficiency is estimated between 33% to 47%. The amplifier is designed to be used as final stage of a downlink satellite transmitter for Tracking Telemetry & Command system. A commercial power p-HEMT process capable of handling a power density higher than 1 W/mm has been selected for the MMIC design. Due to the space application, special attention must be put on the process and MMIC reliability: to this aim performances must be guaranteed in de-rated conditions respect to the process maximum ratings and, in addition, the channel temperature of the active devices must be kept within the value established by Space Requirements and carefully controlled. This makes the design objective very tight. The MMIC power amplifier design and some measurement results are presented in the paper.
{"title":"10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications","authors":"F. Scappaviva, R. Cignani, C. Florian, G. Vannini, F. Filicori, M. Feudale","doi":"10.1109/EMICC.2008.4772354","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772354","url":null,"abstract":"This paper describes the design of a GaAs monolithic high power amplifier at Ku band. The chip delivers about 40 dBm of saturated output power, in CW operating conditions, at 11.7 GHz central frequency, with 17% of bandwidth. The saturated power gain is 12.4 dB with 2 dB gain flatness across the application bandwidth while the chip power added efficiency is estimated between 33% to 47%. The amplifier is designed to be used as final stage of a downlink satellite transmitter for Tracking Telemetry & Command system. A commercial power p-HEMT process capable of handling a power density higher than 1 W/mm has been selected for the MMIC design. Due to the space application, special attention must be put on the process and MMIC reliability: to this aim performances must be guaranteed in de-rated conditions respect to the process maximum ratings and, in addition, the channel temperature of the active devices must be kept within the value established by Space Requirements and carefully controlled. This makes the design objective very tight. The MMIC power amplifier design and some measurement results are presented in the paper.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132619059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EUMC.2008.4751770
M. Richter, K. Becker, L. Bottcher, M. Schneider
This paper describes the design, simulation and measurement of interconnects of buried active 77 GHz chips to a high frequency substrate using microvia technology. The embedding technology proposed offers great opportunities for a very broad range of frequencies and applications as well as a large potential for cost reduction.
{"title":"Design of 77 GHz Interconnects for Buried SiGe MMICs Using Novel System-in-Package Technology","authors":"M. Richter, K. Becker, L. Bottcher, M. Schneider","doi":"10.1109/EUMC.2008.4751770","DOIUrl":"https://doi.org/10.1109/EUMC.2008.4751770","url":null,"abstract":"This paper describes the design, simulation and measurement of interconnects of buried active 77 GHz chips to a high frequency substrate using microvia technology. The embedding technology proposed offers great opportunities for a very broad range of frequencies and applications as well as a large potential for cost reduction.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127222355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772335
K. Y. Chan, M. Daneshmand, A. A. Fomani, R. Mansour, R. Ramer
This paper presents a novel approach to monolithically implementing RF MEMS T-type switches for redundancy switch matrix applications. The T-type switch performs three operational states: two turning states and one crossover state. A six-mask fabrication process is adapted to fabricate the proposed design. Novel RF circuits were used to implement the entire system, including series contact cantilever beams, RF crossover, 90 degree turns and four-port cross junctions. The measured results for the entire T-type switch demonstrate an insertion loss of 1.5 dB, a return loss of better than -20 dB and an isolation higher than 28 dB for all states for frequencies up to 30 GHz. To our knowledge, this is the first time an RF MEMS T-type switch has ever been reported.
{"title":"Monolithic MEMS T-type Switch for Redundancy Switch Matrix Applications","authors":"K. Y. Chan, M. Daneshmand, A. A. Fomani, R. Mansour, R. Ramer","doi":"10.1109/EMICC.2008.4772335","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772335","url":null,"abstract":"This paper presents a novel approach to monolithically implementing RF MEMS T-type switches for redundancy switch matrix applications. The T-type switch performs three operational states: two turning states and one crossover state. A six-mask fabrication process is adapted to fabricate the proposed design. Novel RF circuits were used to implement the entire system, including series contact cantilever beams, RF crossover, 90 degree turns and four-port cross junctions. The measured results for the entire T-type switch demonstrate an insertion loss of 1.5 dB, a return loss of better than -20 dB and an isolation higher than 28 dB for all states for frequencies up to 30 GHz. To our knowledge, this is the first time an RF MEMS T-type switch has ever been reported.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128597653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772255
T. Tikka, V. Saari, K. Halonen, J. Ryynanen, J. Jussila
This paper describes design issues related to high linearity SiGe BiCMOS active mixers, which are primarily targeted for WCDMA base-station applications. The effect of different mixer components to overall mixer dynamic range is described, and the measurement results from four different implementations are given to support this discussion. The different mixers are implemented using the same process as part of a complete receiver and thus the interface to baseband filter has been taken into account in the performance analysis. Since one of the goals in the mixer design has been to maximize the mixer bandwidth, the frequency limitations of different alternatives are discussed throughout the paper.
{"title":"SiGe BiCMOS High Linearity Mixers for Base-Station Applications","authors":"T. Tikka, V. Saari, K. Halonen, J. Ryynanen, J. Jussila","doi":"10.1109/EMICC.2008.4772255","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772255","url":null,"abstract":"This paper describes design issues related to high linearity SiGe BiCMOS active mixers, which are primarily targeted for WCDMA base-station applications. The effect of different mixer components to overall mixer dynamic range is described, and the measurement results from four different implementations are given to support this discussion. The different mixers are implemented using the same process as part of a complete receiver and thus the interface to baseband filter has been taken into account in the performance analysis. Since one of the goals in the mixer design has been to maximize the mixer bandwidth, the frequency limitations of different alternatives are discussed throughout the paper.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128929765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EUMC.2008.4751750
T. Baras, A. Jacob
A subsystem implementation study of a fractional-N frequency synthesizer for K-band satellite communications is presented. The architecture is based on a subharmonic frequency generation implemented with commercially available voltage-controlled oscillator, phase-locked loop chip and a custom designed frequency tripler implemented in low temperature cofired ceramics with vertical integration techniques. As a key component, the frequency multiplier is analyzed in terms of conversion efficiency and suppression of undesired harmonic signals. With the entire subsystem, a reference-stabilized signal in the range of 19...21 GHz with phase noise of -80dBc/Hz at 10 kHz offset and a 25 kHz channel spacing is achieved. The output power is -1 dBm and the spectral purity better than 25 dBc over the entire range. With the presented approach it is demonstrated that the employed technology can be used to successfully design customized, packaged modules and subsystems in the upper microwave frequency range.
{"title":"K-Band Frequency Synthesizer with Subharmonic Signal Generation and LTCC Frequency Tripler","authors":"T. Baras, A. Jacob","doi":"10.1109/EUMC.2008.4751750","DOIUrl":"https://doi.org/10.1109/EUMC.2008.4751750","url":null,"abstract":"A subsystem implementation study of a fractional-N frequency synthesizer for K-band satellite communications is presented. The architecture is based on a subharmonic frequency generation implemented with commercially available voltage-controlled oscillator, phase-locked loop chip and a custom designed frequency tripler implemented in low temperature cofired ceramics with vertical integration techniques. As a key component, the frequency multiplier is analyzed in terms of conversion efficiency and suppression of undesired harmonic signals. With the entire subsystem, a reference-stabilized signal in the range of 19...21 GHz with phase noise of -80dBc/Hz at 10 kHz offset and a 25 kHz channel spacing is achieved. The output power is -1 dBm and the spectral purity better than 25 dBc over the entire range. With the presented approach it is demonstrated that the employed technology can be used to successfully design customized, packaged modules and subsystems in the upper microwave frequency range.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115216616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772278
Timothy Boles
Performance issues in S-Band and X-Band radar applications, have been investigated in parallel paths. The first approach continued with the basic GaAs based MESFET and pHEMT devices with the addition of field plate structures to enhance the transistor source-to-drain breakdown, enabling operation at higher voltages and producing significant improvements in device operation. The second direction questioned the basic material properties underlying the device structures. This methodology has led to the investigation of a number of pHEMT and HEMT designs based on SiC, GaN on SiC, and GaN on silicon devices for both S-Band and X-Band radar applications.
{"title":"Advanced Components for Applications in S-Band and X-Band Radars","authors":"Timothy Boles","doi":"10.1109/EMICC.2008.4772278","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772278","url":null,"abstract":"Performance issues in S-Band and X-Band radar applications, have been investigated in parallel paths. The first approach continued with the basic GaAs based MESFET and pHEMT devices with the addition of field plate structures to enhance the transistor source-to-drain breakdown, enabling operation at higher voltages and producing significant improvements in device operation. The second direction questioned the basic material properties underlying the device structures. This methodology has led to the investigation of a number of pHEMT and HEMT designs based on SiC, GaN on SiC, and GaN on silicon devices for both S-Band and X-Band radar applications.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114246287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772287
V. D. Giacomo, A. Santarelli, A. Raffo, P. Traverso, D. Schreurs, J. Lonac, D. Resca, G. Vannini, F. Filicori, M. Pagani
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.
{"title":"Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design","authors":"V. D. Giacomo, A. Santarelli, A. Raffo, P. Traverso, D. Schreurs, J. Lonac, D. Resca, G. Vannini, F. Filicori, M. Pagani","doi":"10.1109/EMICC.2008.4772287","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772287","url":null,"abstract":"A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125412583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772303
Chau-Ching Chiong, Hong-Yeh Chang, Ming-Tang Chen
Monolithic wide-bandwidth low-phase-noise voltage-controlled oscillators (VCOs) using 2-mum InGaP-GaAs heterojunction bipolar transistor (HBT) technology are presented in the paper. The tuning range of the VCOs are 28.0 to 34.0 GHz and 33.8 to 39.1 GHz, with a phase noise of -100.7 and -103.8 dBc/Hz at 1-MHz offset from the carrier. The overall dc power consumption of the differential-output VCOs is 85 mW with a supply voltage of -2.5 V. The VCOs feature wide tuning range and low phase noise at the same time, with a figure of merit (FOM) of -176 and -171 dB. These are the first Ka-band VCOs with wide tuning bandwidth using commercial GaAs HBT process.
{"title":"Ka-Band Wide-Bandwidth Voltage-Controlled Oscillators in InGaP-GaAs HBT Technology","authors":"Chau-Ching Chiong, Hong-Yeh Chang, Ming-Tang Chen","doi":"10.1109/EMICC.2008.4772303","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772303","url":null,"abstract":"Monolithic wide-bandwidth low-phase-noise voltage-controlled oscillators (VCOs) using 2-mum InGaP-GaAs heterojunction bipolar transistor (HBT) technology are presented in the paper. The tuning range of the VCOs are 28.0 to 34.0 GHz and 33.8 to 39.1 GHz, with a phase noise of -100.7 and -103.8 dBc/Hz at 1-MHz offset from the carrier. The overall dc power consumption of the differential-output VCOs is 85 mW with a supply voltage of -2.5 V. The VCOs feature wide tuning range and low phase noise at the same time, with a figure of merit (FOM) of -176 and -171 dB. These are the first Ka-band VCOs with wide tuning bandwidth using commercial GaAs HBT process.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126974841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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