Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772240
C. Bolognesi, H. Liu, O. Ostinelli, Y. Zeng
In response to the continually increasing appetite for bandwidth, most transistor technologies have recently made great strides towards higher cutoff frequencies: Silicon MOSFETs, SiGe HBTs, InP-based HEMTs and a variety of InP -based HBTs all show cutoff frequencies fT and/or fMAX exceeding 300 GHz, and in some cases approaching 800 GHz. Proponents of various technologies have stated that the development of THz bandwidth devices is an attainable milestone for their technology of choice. Such ambitious goals naturally raise the question of whether such performances are in fact realistic given the well-known trends relating breakdown voltages and cutoff frequencies. Can the contending technologies be scaled in a way enabling THz cutoff frequencies while maintaining the well-behaved characteristics of less aggressively scaled previous generations? The present Invited Paper focuses on our efforts to push InP/GaAsSb DHBTs toward THz bandwidths.
{"title":"Development of Ultrahigh-Speed InP/GaAsSb/InP DHBTs: Are Terahertz Bandwidth Transistors Realistic?","authors":"C. Bolognesi, H. Liu, O. Ostinelli, Y. Zeng","doi":"10.1109/EMICC.2008.4772240","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772240","url":null,"abstract":"In response to the continually increasing appetite for bandwidth, most transistor technologies have recently made great strides towards higher cutoff frequencies: Silicon MOSFETs, SiGe HBTs, InP-based HEMTs and a variety of InP -based HBTs all show cutoff frequencies fT and/or fMAX exceeding 300 GHz, and in some cases approaching 800 GHz. Proponents of various technologies have stated that the development of THz bandwidth devices is an attainable milestone for their technology of choice. Such ambitious goals naturally raise the question of whether such performances are in fact realistic given the well-known trends relating breakdown voltages and cutoff frequencies. Can the contending technologies be scaled in a way enabling THz cutoff frequencies while maintaining the well-behaved characteristics of less aggressively scaled previous generations? The present Invited Paper focuses on our efforts to push InP/GaAsSb DHBTs toward THz bandwidths.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122619684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EUMC.2008.4751769
B. Bonnet, P. Monfraix, R. Chiniard, J. Chaplain, C. Drevon, H. Legay, P. Couderc, J. Cazaux
Thanks to Vertical Multi-Chip Module packaging technology (MCM-V), a novel concept of integrated antenna feed in Ka band has been developed. This technology enables the integration of active elements very close to the radiating surface, which reduces dramatically the weight and volume of the antenna. In this paper the different technological building blocks are described, and the measurements obtained on the first breadboard are discussed. The promising results obtained should lead to a major breakthrough for active receive antennas, driving down cost and complexity.
{"title":"3D Packaging Technology for Integrated Antenna Front-Ends","authors":"B. Bonnet, P. Monfraix, R. Chiniard, J. Chaplain, C. Drevon, H. Legay, P. Couderc, J. Cazaux","doi":"10.1109/EUMC.2008.4751769","DOIUrl":"https://doi.org/10.1109/EUMC.2008.4751769","url":null,"abstract":"Thanks to Vertical Multi-Chip Module packaging technology (MCM-V), a novel concept of integrated antenna feed in Ka band has been developed. This technology enables the integration of active elements very close to the radiating surface, which reduces dramatically the weight and volume of the antenna. In this paper the different technological building blocks are described, and the measurements obtained on the first breadboard are discussed. The promising results obtained should lead to a major breakthrough for active receive antennas, driving down cost and complexity.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122180583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EUMC.2008.4751752
P. Farinelli, F. Solazzi, C. Calaza, B. Margesin, R. Sorrentino
This paper presents a novel wide tuning range MEMS varactor based on a toggle push - pull mechanism for high RF power applications and improved reliability. The device anchoring utilizes a torsion spring mechanism which virtually allows for a full capacitance tuning range. Improved mechanical stability is also provided by the actively controlled pull-out implementation that is realized without increasing the MEMS manufacturing complexity. As a proof of concept, a toggle MEMS varactor has been modeled, designed and manufactured in shunt configuration on a 50 Omega coplanar transmission line. Analytical and full wave electromechanical models are provided as well as electromagnetic characterization. The device has been manufactured on HR Silicon substrate by using the standard FBK-irst RF MEMS process. Optical profile, DC and RF measurements are presented in the 0-40 GHz frequency band. Excellent RF performance as well as a capacitance tuning ratio of 2.5 has been obtained.
本文提出了一种基于开关推拉机构的新型宽调谐范围MEMS变容器，用于高射频功率应用，提高了可靠性。该装置锚定采用扭转弹簧机构，几乎允许全电容调谐范围。主动控制的拉出实现在不增加MEMS制造复杂性的情况下也提供了更好的机械稳定性。作为概念验证，在50 ω共面传输线上进行了并联配置的切换MEMS变容管建模，设计和制造。分析和全波机电模型以及电磁特性提供。该器件采用标准的fbk - first RF MEMS工艺在HR硅衬底上制造。给出了0-40 GHz频段的光学轮廓、直流和射频测量。获得了优异的射频性能和2.5的电容调谐比。
{"title":"A Wide Tuning Range MEMS Varactor Based on a Toggle Push-Pull Mechanism","authors":"P. Farinelli, F. Solazzi, C. Calaza, B. Margesin, R. Sorrentino","doi":"10.1109/EUMC.2008.4751752","DOIUrl":"https://doi.org/10.1109/EUMC.2008.4751752","url":null,"abstract":"This paper presents a novel wide tuning range MEMS varactor based on a toggle push - pull mechanism for high RF power applications and improved reliability. The device anchoring utilizes a torsion spring mechanism which virtually allows for a full capacitance tuning range. Improved mechanical stability is also provided by the actively controlled pull-out implementation that is realized without increasing the MEMS manufacturing complexity. As a proof of concept, a toggle MEMS varactor has been modeled, designed and manufactured in shunt configuration on a 50 Omega coplanar transmission line. Analytical and full wave electromechanical models are provided as well as electromagnetic characterization. The device has been manufactured on HR Silicon substrate by using the standard FBK-irst RF MEMS process. Optical profile, DC and RF measurements are presented in the 0-40 GHz frequency band. Excellent RF performance as well as a capacitance tuning ratio of 2.5 has been obtained.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123744532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772317
K. Kawakami, K. Nishida, M. Hieda, M. Miyazaki
This paper describes a millimeter-wave low spurious quadruple harmonic image rejection mixer (IRM). The even harmonic mixer with the anti-parallel diode pair (APDP) cancels the even harmonics of the input signal and the LO wave. But if we use the higher order harmonic mixer as an up-conversion mixer, there are many odd-order spurious signals that locate nearby a desired RF signal. In order to obtain a low spurious performance of the quadruple harmonic IRM, it employs the 90-degree divider for the LO wave in addition to the RF signal and the IF signal. In the fabricated 60 GHz band IRM MMIC, the 30 dB suppression of the 5th order LO harmonics (5LO) can be achieved by the proposed IRM configuration compared with the conventional one. Realization of the low spurious harmonic mixer is useful for the low cost millimeter-wave commercial production.
{"title":"Millimeter-Wave Low Spurious Quadruple Harmonic Image Rejection Mixer with 90-degree LO Power Divider","authors":"K. Kawakami, K. Nishida, M. Hieda, M. Miyazaki","doi":"10.1109/EMICC.2008.4772317","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772317","url":null,"abstract":"This paper describes a millimeter-wave low spurious quadruple harmonic image rejection mixer (IRM). The even harmonic mixer with the anti-parallel diode pair (APDP) cancels the even harmonics of the input signal and the LO wave. But if we use the higher order harmonic mixer as an up-conversion mixer, there are many odd-order spurious signals that locate nearby a desired RF signal. In order to obtain a low spurious performance of the quadruple harmonic IRM, it employs the 90-degree divider for the LO wave in addition to the RF signal and the IF signal. In the fabricated 60 GHz band IRM MMIC, the 30 dB suppression of the 5th order LO harmonics (5LO) can be achieved by the proposed IRM configuration compared with the conventional one. Realization of the low spurious harmonic mixer is useful for the low cost millimeter-wave commercial production.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128215310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772242
M. Karkkainen, M. Varonen, D. Sandstrom, T. Tikka, S. Lindfors, K. Halonen
We present design aspects and techniques for millimeter-wave circuits implemented in 65-nm CMOS. Different transmission line topologies are discussed and measurement results for a conventional coplanar waveguide and slow-wave coplanar waveguide implemented in 65-nm CMOS are shown. The attenuation of the on-chip transmission lines can be reduced by using slow-wave coplanar waveguides. A 1-stage cascode amplifier in 65-nm CMOS employing inductors as matching elements is presented. On-chip interconnections of the amplifier are implemented and modeled using coplanar waveguides. The ground plane of the coplanar waveguide provides a good ground reference for the entire circuit.
{"title":"Design Aspects of 65-nm CMOS MMICs","authors":"M. Karkkainen, M. Varonen, D. Sandstrom, T. Tikka, S. Lindfors, K. Halonen","doi":"10.1109/EMICC.2008.4772242","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772242","url":null,"abstract":"We present design aspects and techniques for millimeter-wave circuits implemented in 65-nm CMOS. Different transmission line topologies are discussed and measurement results for a conventional coplanar waveguide and slow-wave coplanar waveguide implemented in 65-nm CMOS are shown. The attenuation of the on-chip transmission lines can be reduced by using slow-wave coplanar waveguides. A 1-stage cascode amplifier in 65-nm CMOS employing inductors as matching elements is presented. On-chip interconnections of the amplifier are implemented and modeled using coplanar waveguides. The ground plane of the coplanar waveguide provides a good ground reference for the entire circuit.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128216310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772289
Zongru Liu, E. Skafidas, R. Evans
A 70 GHz VCO with 8 GHz tuning range is implemented on 0.13um CMOS. It has an output power of - 4 dBm and a phase noise of -107 dBc/Hz at 10 MHz carrier offset. From 0 to 70 degree Celsius the output power varies from -4 dBm to -8 dBm and exhibits a maximum frequency deviation of 200 MHz over this range. The VCO has the highest figure of merit (-169.8dBc/Hz) of any VCO fabricated on bulk CMOS operating above 60 GHz.
{"title":"A 70GHz VCO with 8GHz Tuning Range in 0.13um CMOS Technology","authors":"Zongru Liu, E. Skafidas, R. Evans","doi":"10.1109/EMICC.2008.4772289","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772289","url":null,"abstract":"A 70 GHz VCO with 8 GHz tuning range is implemented on 0.13um CMOS. It has an output power of - 4 dBm and a phase noise of -107 dBc/Hz at 10 MHz carrier offset. From 0 to 70 degree Celsius the output power varies from -4 dBm to -8 dBm and exhibits a maximum frequency deviation of 200 MHz over this range. The VCO has the highest figure of merit (-169.8dBc/Hz) of any VCO fabricated on bulk CMOS operating above 60 GHz.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134129975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772292
W. Ciccognani, F. Giannini, E. Limiti, P. Longhi
In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip's power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.
{"title":"Full W-Band High-Gain LNA in mHEMT MMIC Technology","authors":"W. Ciccognani, F. Giannini, E. Limiti, P. Longhi","doi":"10.1109/EMICC.2008.4772292","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772292","url":null,"abstract":"In this contribution the possible applications, technology, design and measurements of a W-Band high gain LNA are given. The main features of the four stage LNA can be summarised as following: a 25 dB average gain with plusmn2 dB ripple from 70 to 105 GHz, where gain is higher than 21 dB on the entire 70-110 GHz range. LNA predicted noise figure is 2.7 dB between 80 and 95GHz and less than 3.2 dB up to 108 GHz while the chip's power consumption is 35 mW. The technology used is a 70 nm GaAs mHEMT process from OMMIC.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130264998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772334
S. Fouladi, W. Dong Yan, R. Mansour
This paper presents an approach to linearly tune the center frequency of a microwave bandpass filter using MEMS thermal actuators. A three-pole microwave tunable bandpass filter operating at Ka-band is designed, fabricated and tested. The fabricated filter has a center frequency at 33 GHz and a 14% relative bandwidth. The mid-band insertion loss is 2.7 dB and the return loss is better than 10 dB. A 15% continuous linear tuning range from 28 GHz to 33 GHz is achieved with a mid-band insertion loss better than 3.3 dB over the tuning range.
{"title":"Microwave Tunable Bandpass Filter with MEMS Thermal Actuators","authors":"S. Fouladi, W. Dong Yan, R. Mansour","doi":"10.1109/EMICC.2008.4772334","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772334","url":null,"abstract":"This paper presents an approach to linearly tune the center frequency of a microwave bandpass filter using MEMS thermal actuators. A three-pole microwave tunable bandpass filter operating at Ka-band is designed, fabricated and tested. The fabricated filter has a center frequency at 33 GHz and a 14% relative bandwidth. The mid-band insertion loss is 2.7 dB and the return loss is better than 10 dB. A 15% continuous linear tuning range from 28 GHz to 33 GHz is achieved with a mid-band insertion loss better than 3.3 dB over the tuning range.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132706211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772320
I. Kallfass, S. Diebold, H. Massler, S. Koch, Matthias Seelmann-Eggebert, A. Leuther
This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60 and 94 GHz, respectively. Rivalled only by PIN diode switches, an insertion loss of <2 dB is demonstrated up to 120 GHz. Shorted stubs are used to compensate for parasitic FET capacitance and allow for matching. Linearity data is presented for 60 and 94 GHz SPDT switches. A comprehensive comparison with state-of-the-art planar SPDT switches is included. A 2:6 switch network for multi-antenna transceivers achieves <4 dB insertion loss at 60 GHz.
{"title":"Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz","authors":"I. Kallfass, S. Diebold, H. Massler, S. Koch, Matthias Seelmann-Eggebert, A. Leuther","doi":"10.1109/EMICC.2008.4772320","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772320","url":null,"abstract":"This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60 and 94 GHz, respectively. Rivalled only by PIN diode switches, an insertion loss of <2 dB is demonstrated up to 120 GHz. Shorted stubs are used to compensate for parasitic FET capacitance and allow for matching. Linearity data is presented for 60 and 94 GHz SPDT switches. A comprehensive comparison with state-of-the-art planar SPDT switches is included. A 2:6 switch network for multi-antenna transceivers achieves <4 dB insertion loss at 60 GHz.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114399194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772290
Z. Hasan-Abrar, Y. Chow, Y. W. Eng
This paper describes the design and implementation of a fully-integrated MMIC low-voltage, low-noise amplifier (LNA) for use in multimode, multiband receivers using 0.25 um enhancement-mode GaAs pHEMT technology. The LNA has two cascaded gain stages and is fully usable down to 0.8 V supply voltage and 5 mA total current drain. Power supply inductors, bypass capacitor and interstage matching are integrated on the die. An external inductor can be added to improve input match and gain. At 1.4 V supply, it achieves broadband (1.5-6)GHz gain of 17.5 dB and typical noise figure of 1.5 dB while consuming 18 mA of total current. Gain variation is typically less than 1.5 dB. Input IP3 is better than -4 dBm across the band. The complete chip occupies an area of 1.1 mm2.
{"title":"A Low-voltage, Fully-integrated (1.5-6) GHz Low-Noise Amplifier in E-mode pHEMT Technology for Multiband, Multimode Applications","authors":"Z. Hasan-Abrar, Y. Chow, Y. W. Eng","doi":"10.1109/EMICC.2008.4772290","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772290","url":null,"abstract":"This paper describes the design and implementation of a fully-integrated MMIC low-voltage, low-noise amplifier (LNA) for use in multimode, multiband receivers using 0.25 um enhancement-mode GaAs pHEMT technology. The LNA has two cascaded gain stages and is fully usable down to 0.8 V supply voltage and 5 mA total current drain. Power supply inductors, bypass capacitor and interstage matching are integrated on the die. An external inductor can be added to improve input match and gain. At 1.4 V supply, it achieves broadband (1.5-6)GHz gain of 17.5 dB and typical noise figure of 1.5 dB while consuming 18 mA of total current. Gain variation is typically less than 1.5 dB. Input IP3 is better than -4 dBm across the band. The complete chip occupies an area of 1.1 mm2.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134430706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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