Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772284
A. Inoue, H. Amasuga, S. Goto, M. Miyazaki
A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.
{"title":"A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers","authors":"A. Inoue, H. Amasuga, S. Goto, M. Miyazaki","doi":"10.1109/EMICC.2008.4772284","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772284","url":null,"abstract":"A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133209061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772288
Yu Zhu, Cejun Wei, O. Klimashov, Binghui Li, C. Zhang, Y. Tkachenko
Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise model can be attached to any nonlinear signal model to predicate both noise and nonlinear signal responses.
{"title":"Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs","authors":"Yu Zhu, Cejun Wei, O. Klimashov, Binghui Li, C. Zhang, Y. Tkachenko","doi":"10.1109/EMICC.2008.4772288","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772288","url":null,"abstract":"Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise model can be attached to any nonlinear signal model to predicate both noise and nonlinear signal responses.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127073755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772248
D. Yeh, S. Sarkar, S. Pinel, Procheta Sen, J. Laskar
In this paper, two integrated low-power broadband 90 nm-CMOS analog solutions are demonstrated to demodulate the multi-gigabit BPSK/ASK signal up to 3 Gbps. In the coherent BPSK mode, a transmission speed over 2.5 Gbps is achievable with a carrier frequency range of 8.5-9.5 GHz for a total DC power consumption of 73 mW with more than 20 dB conversion gain. A minimum sensitivity of -35 dBm is demonstrated for this demodulator with 33 dB dynamic range. In the non-coherent ASK mode, a transmission speed over 3 Gbps is achieved for a carrier frequency range of 6-9 GHz at DC power consumption of 32 mW. A minimum sensitivity of -26 dBm is demonstrated for the demodulator with 21 dB dynamic range. This is the best trade-off in terms of data rate and power consumption of CMOS demodulators reported at around 10 GHz carrier frequencies.
{"title":"An Integrated IQ Demodulator with Integrated Low-Power Multi-Gigabit BPSK / ASK Analog Signal Processor in 90nm CMOS","authors":"D. Yeh, S. Sarkar, S. Pinel, Procheta Sen, J. Laskar","doi":"10.1109/EMICC.2008.4772248","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772248","url":null,"abstract":"In this paper, two integrated low-power broadband 90 nm-CMOS analog solutions are demonstrated to demodulate the multi-gigabit BPSK/ASK signal up to 3 Gbps. In the coherent BPSK mode, a transmission speed over 2.5 Gbps is achievable with a carrier frequency range of 8.5-9.5 GHz for a total DC power consumption of 73 mW with more than 20 dB conversion gain. A minimum sensitivity of -35 dBm is demonstrated for this demodulator with 33 dB dynamic range. In the non-coherent ASK mode, a transmission speed over 3 Gbps is achieved for a carrier frequency range of 6-9 GHz at DC power consumption of 32 mW. A minimum sensitivity of -26 dBm is demonstrated for the demodulator with 21 dB dynamic range. This is the best trade-off in terms of data rate and power consumption of CMOS demodulators reported at around 10 GHz carrier frequencies.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115059712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772280
H. Berg, H. Thiesies, E. Hemmendorff, Georgios Sidiropoulos, J. Hedman
Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 mum SiGe-BiCMOS process with an fT of 70 GHz.
在低成本的标准硅工艺中实现了相位和幅度控制集成电路。S, C和x波段的几个集成电路的设计表明，硅锗是砷化镓的有力竞争者，在最低噪声系数并不重要的情况下。这也适用于适用于军用有源相控阵雷达的T/ r模块。本文所介绍的电路是由奥地利微系统公司在其0.35 μ m SiGe-BiCMOS工艺中制造的，fT为70 GHz。
{"title":"Silicon-Germanium for Phased Array Radars","authors":"H. Berg, H. Thiesies, E. Hemmendorff, Georgios Sidiropoulos, J. Hedman","doi":"10.1109/EMICC.2008.4772280","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772280","url":null,"abstract":"Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 mum SiGe-BiCMOS process with an fT of 70 GHz.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116978403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772228
M. Kantanen, J. Holmberg, T. Karttaavi, J. Volotinen
This paper presents design and a characterisation of an active single-stage single-ended 30 to 60 GHz frequency doubler and a resistive down conversion mixer with differential buffer stage. These MMICs are realised using 90-nm CMOS process. The doubler exhibit 7.1 dB conversion loss and 10.8 dB fundamental frequency suppression with 0 dBm input power and 13.7 mW power consumption. Maximum output power of -4.2 dBm is achieved with 5 dBm input power. The mixer has 9.8 dB conversion gain with +5 dBm local oscillator level. The compression point P1dB is -2 dBm with 14 mW power consumption.
{"title":"60 GHz Frequency Conversion 90 nm CMOS Circuits","authors":"M. Kantanen, J. Holmberg, T. Karttaavi, J. Volotinen","doi":"10.1109/EMICC.2008.4772228","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772228","url":null,"abstract":"This paper presents design and a characterisation of an active single-stage single-ended 30 to 60 GHz frequency doubler and a resistive down conversion mixer with differential buffer stage. These MMICs are realised using 90-nm CMOS process. The doubler exhibit 7.1 dB conversion loss and 10.8 dB fundamental frequency suppression with 0 dBm input power and 13.7 mW power consumption. Maximum output power of -4.2 dBm is achieved with 5 dBm input power. The mixer has 9.8 dB conversion gain with +5 dBm local oscillator level. The compression point P1dB is -2 dBm with 14 mW power consumption.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124058938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772341
E. Ragonese, A. Scuderi, G. Palmisano
In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-μm SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply.
{"title":"A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar","authors":"E. Ragonese, A. Scuderi, G. Palmisano","doi":"10.1109/EMICC.2008.4772341","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772341","url":null,"abstract":"In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-μm SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130806317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772285
R. Trew, W. Kuang, Y. Liu, G. Bilbro
Physics-based device models integrated into harmonic-balance microwave CAD simulators add flexibility and the ability to investigate both device and circuit design parameters before fabrication and prototyping. Accurate formulation of these models requires that relevant physical phenomena affecting the performance of these devices be identified and suitable models developed. In this work it is shown that inclusion of space-charge induced source resistance, RF channel breakdown, and gate tunnel leakage and surface conduction in AlGaN/GaN HFETs produce a simulator that produces excellent agreement between simulated and measured data for amplifiers fabricated with these devices. This type of simulator is very useful for advanced optimization investigations.
{"title":"Widebandgap Semiconductor HFET Models for Microwave CAD","authors":"R. Trew, W. Kuang, Y. Liu, G. Bilbro","doi":"10.1109/EMICC.2008.4772285","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772285","url":null,"abstract":"Physics-based device models integrated into harmonic-balance microwave CAD simulators add flexibility and the ability to investigate both device and circuit design parameters before fabrication and prototyping. Accurate formulation of these models requires that relevant physical phenomena affecting the performance of these devices be identified and suitable models developed. In this work it is shown that inclusion of space-charge induced source resistance, RF channel breakdown, and gate tunnel leakage and surface conduction in AlGaN/GaN HFETs produce a simulator that produces excellent agreement between simulated and measured data for amplifiers fabricated with these devices. This type of simulator is very useful for advanced optimization investigations.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130289237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772306
T. Yamamoto, K. Fujimori, M. Sanagi, S. Nogi
A Rectifying Antenna (Rectenna) is one of the most important components for a wireless power transmission. It has been developed for many applications such as Space Solar Power System (SSPS), Radio Frequency IDentification (RF-ID), and electric vehicle etc. The Rectenna consisting of RF-DC conversion circuits and receiving antennas needs to be designed for high conversion efficiency to achieve efficient power transmission. In this paper, we investigated the RF-DC conversion circuits by the theoretical analysis. And, we propose the theoretical formula for calculating the output DC voltage in giving the input voltage. The result that is calculated by the formula agreed with the simulator's result, so, we confirmed the validity of the formula we derived. The theory and the formula we derived are useful in order to know the basic operation of the RF-DC conversion circuit, and to design the circuit efficiently.
{"title":"The Fundamental Design Approach of The RF-DC Conversion Circuit for Optimizing Its Characteristics","authors":"T. Yamamoto, K. Fujimori, M. Sanagi, S. Nogi","doi":"10.1109/EMICC.2008.4772306","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772306","url":null,"abstract":"A Rectifying Antenna (Rectenna) is one of the most important components for a wireless power transmission. It has been developed for many applications such as Space Solar Power System (SSPS), Radio Frequency IDentification (RF-ID), and electric vehicle etc. The Rectenna consisting of RF-DC conversion circuits and receiving antennas needs to be designed for high conversion efficiency to achieve efficient power transmission. In this paper, we investigated the RF-DC conversion circuits by the theoretical analysis. And, we propose the theoretical formula for calculating the output DC voltage in giving the input voltage. The result that is calculated by the formula agreed with the simulator's result, so, we confirmed the validity of the formula we derived. The theory and the formula we derived are useful in order to know the basic operation of the RF-DC conversion circuit, and to design the circuit efficiently.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126909655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772223
C. Pastore, F. Gianesello, D. Gloria, Emmanuelle Serret, P. Benech
A complete strategy to manage dummy fills inside and underneath a large spectrum of integrated RF inductors realized in a 0.13 mum CMOS technology using a Damascene Copper Back End of Line (BEOL) is presented here. The main motivation of this paper is first to evaluate through a Design Of Experiment (DOE) modeling, the impact on RF inductor performances of dummy fills inserted inside or underneath the coils, and then determine the right metal fill density to insert to be compliant with Digital metal density rules without degrading their electrical performances.
本文介绍了一种完整的策略，可以在0.13 μ m CMOS技术中使用Damascene铜后端线(BEOL)实现大频谱集成RF电感器内部和下方管理虚拟填充。本文的主要动机是首先通过实验设计(DOE)建模来评估插入线圈内部或下方的假填充物对射频电感器性能的影响，然后确定要插入的正确金属填充物密度，以符合数字金属密度规则，而不会降低其电气性能。
{"title":"Innovative and Complete Dummy Filling Strategy for RF Inductors Integrated in an Advanced Copper BEOL","authors":"C. Pastore, F. Gianesello, D. Gloria, Emmanuelle Serret, P. Benech","doi":"10.1109/EMICC.2008.4772223","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772223","url":null,"abstract":"A complete strategy to manage dummy fills inside and underneath a large spectrum of integrated RF inductors realized in a 0.13 mum CMOS technology using a Damascene Copper Back End of Line (BEOL) is presented here. The main motivation of this paper is first to evaluate through a Design Of Experiment (DOE) modeling, the impact on RF inductor performances of dummy fills inserted inside or underneath the coils, and then determine the right metal fill density to insert to be compliant with Digital metal density rules without degrading their electrical performances.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123022999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/EMICC.2008.4772272
M. Dehan, J. Borremans, P. Wambacq, S. Decoutere
As CMOS scales down and sees is cost per mm2 increasing, area-aware RF design solutions are called for. Integrated inductors with multiple taps allow for low-area multi-band RF circuit design. This work reports on the design of these inductors and provides modelling and extraction procedures demonstrated on 4-port measurements. Additionally, the application of such inductors is demonstrated on a low-area switchable dual-band VCO in 90 nm CMOS with an area of only 0.04 mm2. Dual-band operation around 3.5 and 10 GHz is achieved, with a high FOM of 182 dB. This performance demonstrates the opportunities using tapped inductors for high-performance area-aware RF design.
{"title":"Tapped integrated inductors: Modelling and Application in Multi-Band RF Circuits","authors":"M. Dehan, J. Borremans, P. Wambacq, S. Decoutere","doi":"10.1109/EMICC.2008.4772272","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772272","url":null,"abstract":"As CMOS scales down and sees is cost per mm2 increasing, area-aware RF design solutions are called for. Integrated inductors with multiple taps allow for low-area multi-band RF circuit design. This work reports on the design of these inductors and provides modelling and extraction procedures demonstrated on 4-port measurements. Additionally, the application of such inductors is demonstrated on a low-area switchable dual-band VCO in 90 nm CMOS with an area of only 0.04 mm2. Dual-band operation around 3.5 and 10 GHz is achieved, with a high FOM of 182 dB. This performance demonstrates the opportunities using tapped inductors for high-performance area-aware RF design.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115263300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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