Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556340
W. Zhuang, Jingbiao Chen
The experiment system for Active Optical Frequency Standard(AOFS) based on thermal Ca atomic beam has been set up. Making use of magnetic field for the atomic beam, we have realized population inversion between ground state 1S0 and metastable state 3P1(m=0) which is primary for AOFS. Detection results are presented by applying electron-shelving technique on thermal Ca atomic beam.
{"title":"Progress of Active Optical Frequency Standard based on thermal Ca atomic beam","authors":"W. Zhuang, Jingbiao Chen","doi":"10.1109/FREQ.2010.5556340","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556340","url":null,"abstract":"The experiment system for Active Optical Frequency Standard(AOFS) based on thermal Ca atomic beam has been set up. Making use of magnetic field for the atomic beam, we have realized population inversion between ground state <sup>1</sup>S<inf>0</inf> and metastable state <sup>3</sup>P<inf>1</inf>(m=0) which is primary for AOFS. Detection results are presented by applying electron-shelving technique on thermal Ca atomic beam.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"272 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133813584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556292
P. Green, M. Facchine, Jonathon Ulrey
Newer systems require improved noise performance in order to detect and track targets at great distances in difficult clutter environments. Typically, phase noise is an area that is closely watched as a main contributor to overall system noise performance. Amplitude noise is often treated as a second order effect because systems are often operated in amplitude compression during transmits to maximize the effective radiated power. This amplitude compression, in effect, will strip off most of the amplitude noise generated. Advances in phase noise performance continue to improve to the degree such that corruption due to other noise contributors may degrade overall system phase noise performance. This paper reflects a potential method of measuring transmit modules in a passive-dynamic mode to account for this phenomenon. Total noise can now considered at the output as a function of drive level and total input noise. Measured data from a module will illustrate the technique.
{"title":"Passive dynamic method & measurements of compressed amplifiers to determine amplitude noise effects on system noise performance","authors":"P. Green, M. Facchine, Jonathon Ulrey","doi":"10.1109/FREQ.2010.5556292","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556292","url":null,"abstract":"Newer systems require improved noise performance in order to detect and track targets at great distances in difficult clutter environments. Typically, phase noise is an area that is closely watched as a main contributor to overall system noise performance. Amplitude noise is often treated as a second order effect because systems are often operated in amplitude compression during transmits to maximize the effective radiated power. This amplitude compression, in effect, will strip off most of the amplitude noise generated. Advances in phase noise performance continue to improve to the degree such that corruption due to other noise contributors may degrade overall system phase noise performance. This paper reflects a potential method of measuring transmit modules in a passive-dynamic mode to account for this phenomenon. Total noise can now considered at the output as a function of drive level and total input noise. Measured data from a module will illustrate the technique.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115086348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556305
T. Ishii, Y. Watanabe, Y. Yano, S. Goka, T. Sato, H. Sekimoto
A measurement system with a temperature control function was developed for mapping the vibration patterns of piezoelectric resonator devices. This system is based on the laser speckle method with intermittent device excitation. By use of a small oven with transparent windows, the vibration shapes of devices can be visualized in high temperature environment. Experimental results using a 5.6 MHz AT-cut quartz resonator show that the mode shapes can be visualized from room temperature to 74°C
{"title":"Mode shape measurement system with temperature variation function","authors":"T. Ishii, Y. Watanabe, Y. Yano, S. Goka, T. Sato, H. Sekimoto","doi":"10.1109/FREQ.2010.5556305","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556305","url":null,"abstract":"A measurement system with a temperature control function was developed for mapping the vibration patterns of piezoelectric resonator devices. This system is based on the laser speckle method with intermittent device excitation. By use of a small oven with transparent windows, the vibration shapes of devices can be visualized in high temperature environment. Experimental results using a 5.6 MHz AT-cut quartz resonator show that the mode shapes can be visualized from room temperature to 74°C","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115311243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556263
B. Shillue
The ALMA Photonic LO system consists of a unique combination of a widely tunable and low-phase-noise millimeter-wave LO reference transmission, combined with a precise round-trip phase correction system based on an optical interferometer. The first installation of the system is now in place and supporting the initial phase of scientific commissioning of the telescope.
{"title":"Atacama Large Millimeter Array photonic local oscillator: femtosecond-level synchronization for radio astronomy","authors":"B. Shillue","doi":"10.1109/FREQ.2010.5556263","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556263","url":null,"abstract":"The ALMA Photonic LO system consists of a unique combination of a widely tunable and low-phase-noise millimeter-wave LO reference transmission, combined with a precise round-trip phase correction system based on an optical interferometer. The first installation of the system is now in place and supporting the initial phase of scientific commissioning of the telescope.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114404365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556357
Joshua E-Y Lee, A. Seshia
This paper presents a method for the fast and direct extraction of model parameters for capacitive MEMS resonators from their measured transmission response such as quality factor, resonant frequency, and motional resistance. We show that these parameters may be extracted without having to first de-embed the resonator motional current from the feedthrough. The series and parallel resonances from the measured electrical transmission are used to determine the MEMS resonator circuit parameters. The theoretical basis for the method is elucidated by using both the Nyquist and susceptance frequency response plots, and applicable in the limit where CF > CmQ; commonly the case when characterizing MEMS resonators at RF. The method is then applied to the measured electrical transmission for capacitively transduced MEMS resonators, and compared against parameters obtained using a Lorentzian fit to the measured response. Close agreement between the two methods is reported herein.
{"title":"Direct parameter extraction in capacitively transduced micromechanical resonators using the anti-resonance","authors":"Joshua E-Y Lee, A. Seshia","doi":"10.1109/FREQ.2010.5556357","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556357","url":null,"abstract":"This paper presents a method for the fast and direct extraction of model parameters for capacitive MEMS resonators from their measured transmission response such as quality factor, resonant frequency, and motional resistance. We show that these parameters may be extracted without having to first de-embed the resonator motional current from the feedthrough. The series and parallel resonances from the measured electrical transmission are used to determine the MEMS resonator circuit parameters. The theoretical basis for the method is elucidated by using both the Nyquist and susceptance frequency response plots, and applicable in the limit where CF > CmQ; commonly the case when characterizing MEMS resonators at RF. The method is then applied to the measured electrical transmission for capacitively transduced MEMS resonators, and compared against parameters obtained using a Lorentzian fit to the measured response. Close agreement between the two methods is reported herein.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117097680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556261
B. Capelle, Y. Epelboin, J. Détaint
This paper considers the effect of dislocations on the vibration modes of thickness shear resonator and SAW delay line using quartz. It is observed that they are at the origin of mode shape modifications and non linear effects. The principal mechanism of interaction seems to be related to the creation of a stained bias state increasing the non-linear effects.
{"title":"Study by stroboscopic X-ray topography of the effects of the crystal defects on the modes of high performance resonators","authors":"B. Capelle, Y. Epelboin, J. Détaint","doi":"10.1109/FREQ.2010.5556261","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556261","url":null,"abstract":"This paper considers the effect of dislocations on the vibration modes of thickness shear resonator and SAW delay line using quartz. It is observed that they are at the origin of mode shape modifications and non linear effects. The principal mechanism of interaction seems to be related to the creation of a stained bias state increasing the non-linear effects.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117308998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556379
Steven J. Fry, G. A. Burnett
Miniature AT-strip quartz crystal resonators are capable of providing excellent frequency stability with good immunity to environmental influences. In particular, the fractional frequency change under acceleration is typically about 2×10−9 g−1. While more than good enough for most applications, for those that require low phase noise under vibration this may not be adequate. In this case, the sensitivity to acceleration must be below 1×10−9 g−1 and for some applications near to if not below 1×10−10 g−1. While the method of using two crystals oriented so that their acceleration sensitivity vectors are anti-parallel to produce a composite resonator with reduced sensitivity has been known for many years, difficulties in characterizing and orienting the crystals has limited the implementation of this technique. We adopt this method using AT-strip crystals designed and manufactured to have acceleration sensitivities below 1×10−9 g−1 that are sufficiently repeatable so that two crystals can be paired and easily oriented in an oscillator with a resultant acceleration sensitivity below 1×10−10 g−1. The results of implementing this method in the production of 10 MHz to 40 MHz oscillators are summarized.
{"title":"Reducing the acceleration sensitivity of AT-strip quartz crystal oscillators","authors":"Steven J. Fry, G. A. Burnett","doi":"10.1109/FREQ.2010.5556379","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556379","url":null,"abstract":"Miniature AT-strip quartz crystal resonators are capable of providing excellent frequency stability with good immunity to environmental influences. In particular, the fractional frequency change under acceleration is typically about 2×10<sup>−9</sup> g<sup>−1</sup>. While more than good enough for most applications, for those that require low phase noise under vibration this may not be adequate. In this case, the sensitivity to acceleration must be below 1×10<sup>−9</sup> g<sup>−1</sup> and for some applications near to if not below 1×10<sup>−10</sup> g<sup>−1</sup>. While the method of using two crystals oriented so that their acceleration sensitivity vectors are anti-parallel to produce a composite resonator with reduced sensitivity has been known for many years, difficulties in characterizing and orienting the crystals has limited the implementation of this technique. We adopt this method using AT-strip crystals designed and manufactured to have acceleration sensitivities below 1×10<sup>−9</sup> g<sup>−1</sup> that are sufficiently repeatable so that two crystals can be paired and easily oriented in an oscillator with a resultant acceleration sensitivity below 1×10<sup>−10</sup> g<sup>−1</sup>. The results of implementing this method in the production of 10 MHz to 40 MHz oscillators are summarized.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117314443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556289
P. Moreira, P. Alvarez, J. Serrano, Izzat Darwezeh, T. Wlostowski
A digital architecture for the Dual Mixer Time Difference (DMTD) is presented. This architecture has several advantages over other phase frequency detectors such as being linear, not having a dead zone and with an accuracy within the sub-picoseconds range. The intrinsic phase noise present in all timing signals is the main cause of the limitation in the accuracy of this phase frequency detector. Therefore, this paper describes the advantages and disadvantages of the presented architecture as well as how its performance changes with the clock phase noise by showing some experimental measurements. The application of this architecture, for the use of Ethernet as both data and synchronization network, is also discussed.
{"title":"Digital dual mixer time difference for sub-nanosecond time synchronization in Ethernet","authors":"P. Moreira, P. Alvarez, J. Serrano, Izzat Darwezeh, T. Wlostowski","doi":"10.1109/FREQ.2010.5556289","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556289","url":null,"abstract":"A digital architecture for the Dual Mixer Time Difference (DMTD) is presented. This architecture has several advantages over other phase frequency detectors such as being linear, not having a dead zone and with an accuracy within the sub-picoseconds range. The intrinsic phase noise present in all timing signals is the main cause of the limitation in the accuracy of this phase frequency detector. Therefore, this paper describes the advantages and disadvantages of the presented architecture as well as how its performance changes with the clock phase noise by showing some experimental measurements. The application of this architecture, for the use of Ethernet as both data and synchronization network, is also discussed.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116135830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556282
T. Ma, Zhitian Zhang, Wenyan Wang, Chao Zhang, G. Feng
Lateral field excitation (LFE) acoustic wave devices, which employ two electrodes on the same surface of a piezoelectric substrate, have been found attractive in sensing applications. However, up to now, the cut for the pure-LFE mode of LiTaO3 is still unknown, which has hindered the application of LiTaO3 pure-LFE mode device in liquid phase sensing. In this work, pure-LFE on LiTaO3 was investigated both theoretically and experimentally. The calculated results showed that when the driving electric field direction is parallel to the crystallographic X-axis of the piezoelectric substrate, (yxl)90° LiTaO3 LFE device works on pure-LFE mode with a piezoelectric coupling factor of 44.52% for slow shear c mode of LFE. The devices' impedance curves were measured. The experimental results agreed with the theoretical prediction well.
{"title":"Investigation of lateral-field-excitation on LiTaO3 single crystal","authors":"T. Ma, Zhitian Zhang, Wenyan Wang, Chao Zhang, G. Feng","doi":"10.1109/FREQ.2010.5556282","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556282","url":null,"abstract":"Lateral field excitation (LFE) acoustic wave devices, which employ two electrodes on the same surface of a piezoelectric substrate, have been found attractive in sensing applications. However, up to now, the cut for the pure-LFE mode of LiTaO3 is still unknown, which has hindered the application of LiTaO3 pure-LFE mode device in liquid phase sensing. In this work, pure-LFE on LiTaO3 was investigated both theoretically and experimentally. The calculated results showed that when the driving electric field direction is parallel to the crystallographic X-axis of the piezoelectric substrate, (yxl)90° LiTaO3 LFE device works on pure-LFE mode with a piezoelectric coupling factor of 44.52% for slow shear c mode of LFE. The devices' impedance curves were measured. The experimental results agreed with the theoretical prediction well.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123721183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-01DOI: 10.1109/FREQ.2010.5556315
A. Samarao, F. Ayazi
We report on a novel temperature compensation technique that exploits the dependence of TCF on the free charge carriers in silicon bulk acoustic resonators (SiBARs). The free charge carriers are considerably minimized by creating single and multiple pn-junction based depletion regions in the body of the resonator. The TCF of a highly resistive (>1000 Ω-cm) conventional rectangular SiBAR has been reduced from −32 ppm/°C to −3 ppm/°C. We previously exploited the dependence of TCF on silicon resonator geometry for TCF compensation. However, at large charge carrier depletion levels achieved in this work, the TCF is found to become independent of silicon resonator geometry.
{"title":"Intrinsic temperature compensation of highly resistive high-Q silicon microresonators via charge carrier depletion","authors":"A. Samarao, F. Ayazi","doi":"10.1109/FREQ.2010.5556315","DOIUrl":"https://doi.org/10.1109/FREQ.2010.5556315","url":null,"abstract":"We report on a novel temperature compensation technique that exploits the dependence of TCF on the free charge carriers in silicon bulk acoustic resonators (SiBARs). The free charge carriers are considerably minimized by creating single and multiple pn-junction based depletion regions in the body of the resonator. The TCF of a highly resistive (>1000 Ω-cm) conventional rectangular SiBAR has been reduced from −32 ppm/°C to −3 ppm/°C. We previously exploited the dependence of TCF on silicon resonator geometry for TCF compensation. However, at large charge carrier depletion levels achieved in this work, the TCF is found to become independent of silicon resonator geometry.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123874814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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