Pub Date : 2022-08-10DOI: 10.1088/2633-4356/acc302
S. Majety, S. Strohauer, Pranta Saha, F. Wietschorke, J. Finley, K. Mueller, M. Radulaski
Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission in a triangular cross-section SiC waveguide by introducing a photonic crystal mirror on its one side and a superconducting nanowire single photon detector (SNSPD) on the other. Our modeled triangular cross-section devices with a randomly positioned emitter have a maximum coupling efficiency of 89 % into the desired optical mode and a high coupling efficiency (> 75 %) in more than half of the configurations. For the first time, NbTiN thin films were sputtered on 4H-SiC and the electrical and optical properties of the thin films were measured. We found that the transport properties are similar to the case of NbTiN on SiO2 substrates, while the extinction coefficient is up to 50 % higher for 1680 nm wavelength. Finally, we performed Finite-Difference Time-Domain simulations of triangular cross-section waveguide integrated with an SNSPD to identify optimal nanowire geometries for efficient detection of light from TE and TM polarized modes.
{"title":"Triangular quantum photonic devices with integrated detectors in silicon carbide","authors":"S. Majety, S. Strohauer, Pranta Saha, F. Wietschorke, J. Finley, K. Mueller, M. Radulaski","doi":"10.1088/2633-4356/acc302","DOIUrl":"https://doi.org/10.1088/2633-4356/acc302","url":null,"abstract":"\u0000 Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission in a triangular cross-section SiC waveguide by introducing a photonic crystal mirror on its one side and a superconducting nanowire single photon detector (SNSPD) on the other. Our modeled triangular cross-section devices with a randomly positioned emitter have a maximum coupling efficiency of 89 % into the desired optical mode and a high coupling efficiency (> 75 %) in more than half of the configurations. For the first time, NbTiN thin films were sputtered on 4H-SiC and the electrical and optical properties of the thin films were measured. We found that the transport properties are similar to the case of NbTiN on SiO2 substrates, while the extinction coefficient is up to 50 % higher for 1680 nm wavelength. Finally, we performed Finite-Difference Time-Domain simulations of triangular cross-section waveguide integrated with an SNSPD to identify optimal nanowire geometries for efficient detection of light from TE and TM polarized modes.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126355205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-30DOI: 10.1088/2633-4356/acb30a
Dylan G. Stone, C. Bradac
In recent years, machine and quantum learning have gained considerable momentum sustained by growth in computational power and data availability and have shown exceptional aptness for solving recognition- and classification-type problems, as well as problems that require complex, strategic planning. In this work, we discuss and analyze the role machine and quantum learning are playing in the development of diamond-based quantum technologies. This matters as diamond and its optically-addressable spin defects are becoming prime hardware candidates for solid state-based applications in quantum information, computing and metrology. Through a selected number of demonstrations, we show that machine and quantum learning are leading to both practical and fundamental improvements in measurement speed and accuracy. This is crucial for quantum applications, especially for those where coherence time and signal-to-noise ratio are scarce resources. We summarize some of the most prominent machine and quantum learning approaches that have been conducive to the presented advances and discuss their potential for proposed and future quantum applications.
{"title":"Machine and quantum learning for diamond-based quantum applications","authors":"Dylan G. Stone, C. Bradac","doi":"10.1088/2633-4356/acb30a","DOIUrl":"https://doi.org/10.1088/2633-4356/acb30a","url":null,"abstract":"\u0000 In recent years, machine and quantum learning have gained considerable momentum sustained by growth in computational power and data availability and have shown exceptional aptness for solving recognition- and classification-type problems, as well as problems that require complex, strategic planning. In this work, we discuss and analyze the role machine and quantum learning are playing in the development of diamond-based quantum technologies. This matters as diamond and its optically-addressable spin defects are becoming prime hardware candidates for solid state-based applications in quantum information, computing and metrology. Through a selected number of demonstrations, we show that machine and quantum learning are leading to both practical and fundamental improvements in measurement speed and accuracy. This is crucial for quantum applications, especially for those where coherence time and signal-to-noise ratio are scarce resources. We summarize some of the most prominent machine and quantum learning approaches that have been conducive to the presented advances and discuss their potential for proposed and future quantum applications.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115858248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-19DOI: 10.1088/2633-4356/ac78ba
S. D. de Graaf, S. Un, A. Shard, T. Lindström
Quantum circuits show unprecedented sensitivity to external fluctuations compared to their classical counterparts, and it can take as little as a single atomic defect somewhere in a mm-sized area to completely spoil device performance. For improved device coherence it is thus essential to find ways to reduce the number of defects, thereby lowering the hardware threshold for achieving fault-tolerant large-scale error-corrected quantum computing. Given the evasive nature of these defects, the materials science required to understand them is at present in uncharted territories, and new techniques must be developed to bridge existing capabilities from materials science with the needs identified by the superconducting quantum circuit community. In this paper, we give an overview of methods for characterising the chemical and structural properties of defects in materials relevant for superconducting quantum circuits. We cover recent developments from in-operation techniques, where quantum circuits are used as probes of the defects themselves, to in situ analysis techniques and well-established ex situ materials analysis techniques. The latter is now increasingly explored by the quantum circuits community to correlate specific material properties with qubit performance. We highlight specific techniques which, given further development, look especially promising and will contribute towards a future toolbox of material analysis techniques for quantum.
{"title":"Chemical and structural identification of material defects in superconducting quantum circuits","authors":"S. D. de Graaf, S. Un, A. Shard, T. Lindström","doi":"10.1088/2633-4356/ac78ba","DOIUrl":"https://doi.org/10.1088/2633-4356/ac78ba","url":null,"abstract":"\u0000 Quantum circuits show unprecedented sensitivity to external fluctuations compared to their classical counterparts, and it can take as little as a single atomic defect somewhere in a mm-sized area to completely spoil device performance. For improved device coherence it is thus essential to find ways to reduce the number of defects, thereby lowering the hardware threshold for achieving fault-tolerant large-scale error-corrected quantum computing. Given the evasive nature of these defects, the materials science required to understand them is at present in uncharted territories, and new techniques must be developed to bridge existing capabilities from materials science with the needs identified by the superconducting quantum circuit community. In this paper, we give an overview of methods for characterising the chemical and structural properties of defects in materials relevant for superconducting quantum circuits. We cover recent developments from in-operation techniques, where quantum circuits are used as probes of the defects themselves, to in situ analysis techniques and well-established ex situ materials analysis techniques. The latter is now increasingly explored by the quantum circuits community to correlate specific material properties with qubit performance. We highlight specific techniques which, given further development, look especially promising and will contribute towards a future toolbox of material analysis techniques for quantum.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121145446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-06DOI: 10.1088/2633-4356/aca8e8
Yujing Wang, L. Vannucci, S. Burger, N. Gregersen
We report a numerical design procedure for pursuing a near-unity coupling efficiency in quantum dot-cavity ridge waveguide single-photon sources by performing simulations with the finite element method. Our optimum design which is based on a 1D nanobeam cavity, achieves a high source efficiency εxy of 97.7% for an isotropic in-plane dipole, together with a remarkable Purcell factor of 38.6. Such a good performance is mainly attributed to the high index contrast of GaAs/SiO2 and a careful cavity design achieving constructive interference and low scattering losses. Furthermore, we analyze the bottleneck of the proposed platform, which is the mode mismatch between the cavity mode and the Bloch mode in the nanobeam. Accordingly, we present the optimization recipe of an arbitrarily high-efficiency on-chip single-photon source by implementing a taper section, whose high smoothness is beneficial to gradually overcoming the mode mismatch, and therefore leading to a higher Purcell factor and source efficiency. Finally, we see good robustness of the source properties in the taper-nanobeam system under the consideration of realistic fabrication imperfections on the hole variation.
{"title":"Near-unity efficiency in ridge waveguide-based, on-chip single-photon sources","authors":"Yujing Wang, L. Vannucci, S. Burger, N. Gregersen","doi":"10.1088/2633-4356/aca8e8","DOIUrl":"https://doi.org/10.1088/2633-4356/aca8e8","url":null,"abstract":"\u0000 We report a numerical design procedure for pursuing a near-unity coupling efficiency in quantum dot-cavity ridge waveguide single-photon sources by performing simulations with the finite element method. Our optimum design which is based on a 1D nanobeam cavity, achieves a high source efficiency εxy of 97.7% for an isotropic in-plane dipole, together with a remarkable Purcell factor of 38.6. Such a good performance is mainly attributed to the high index contrast of GaAs/SiO2 and a careful cavity design achieving constructive interference and low scattering losses. Furthermore, we analyze the bottleneck of the proposed platform, which is the mode mismatch between the cavity mode and the Bloch mode in the nanobeam. Accordingly, we present the optimization recipe of an arbitrarily high-efficiency on-chip single-photon source by implementing a taper section, whose high smoothness is beneficial to gradually overcoming the mode mismatch, and therefore leading to a higher Purcell factor and source efficiency. Finally, we see good robustness of the source properties in the taper-nanobeam system under the consideration of realistic fabrication imperfections on the hole variation.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128510373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-20DOI: 10.1088/2633-4356/ac88ae
C. Thomas, J. Michel, E. Deschaseaux, J. Charbonnier, R. Souil, E. Vermande, Alain Campo, T. Farjot, G. Rodriguez, G. Romano, Frederico Gustavo, B. Jadot, V. Thiney, Y. Thonnart, G. Billiot, T. Meunier, M. Vinet
To reach large-scale quantum computing, three-dimensional integration of scalable qubit arrays and their control electronics in multi-chip assemblies is promising. Within these assemblies, the use of superconducting interconnections, as routing layers, offers interesting perspective in terms of (1) thermal management to protect the qubits from control electronics self-heating, (2) passive device performance with significant increase of quality factors and (3) density rise of low and high frequency signals thanks to minimal dispersion. We report on the fabrication, using 200 mm silicon wafer technologies, of a multi-layer routing platform designed for the hybridation of spin qubit and control electronics chips. A routing level couples the qubits and the control circuits through one layer of Al0.995Cu0.005 and superconducting layers of TiN, Nb or NbN, connected between them by W-based vias. Wafer-level parametric tests at 300 K validate the yield of these technologies while low temperature electrical measurements in cryostat are used to extract the superconducting properties of the routing layers. Preliminary low temperature radio-frequency characterizations of superconducting passive elements, embedded in these routing levels, are presented.
{"title":"Superconducting routing platform for large-scale integration of quantum technologies","authors":"C. Thomas, J. Michel, E. Deschaseaux, J. Charbonnier, R. Souil, E. Vermande, Alain Campo, T. Farjot, G. Rodriguez, G. Romano, Frederico Gustavo, B. Jadot, V. Thiney, Y. Thonnart, G. Billiot, T. Meunier, M. Vinet","doi":"10.1088/2633-4356/ac88ae","DOIUrl":"https://doi.org/10.1088/2633-4356/ac88ae","url":null,"abstract":"\u0000 To reach large-scale quantum computing, three-dimensional integration of scalable qubit arrays and their control electronics in multi-chip assemblies is promising. Within these assemblies, the use of superconducting interconnections, as routing layers, offers interesting perspective in terms of (1) thermal management to protect the qubits from control electronics self-heating, (2) passive device performance with significant increase of quality factors and (3) density rise of low and high frequency signals thanks to minimal dispersion. We report on the fabrication, using 200 mm silicon wafer technologies, of a multi-layer routing platform designed for the hybridation of spin qubit and control electronics chips. A routing level couples the qubits and the control circuits through one layer of Al0.995Cu0.005 and superconducting layers of TiN, Nb or NbN, connected between them by W-based vias. Wafer-level parametric tests at 300 K validate the yield of these technologies while low temperature electrical measurements in cryostat are used to extract the superconducting properties of the routing layers. Preliminary low temperature radio-frequency characterizations of superconducting passive elements, embedded in these routing levels, are presented.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126600893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-12DOI: 10.1088/2633-4356/ac6f3e
Marc Sartison, Oscar Camacho Ibarra, Ioannis Caltzidis, D. Reuter, K. Jöns
Scaling up photonic quantum devices to reach complexities allowing to solve real-world problems requires a platform enabling scalable integration of solid-state quantum emitter with a high yield. Their nanometer-size together with their excellent quantum optical properties make them the ideal candidates for on-chip photonic quantum technologies. However, robust, scalable integration remains elusive. Here, we discuss the state-of-the-art methods to integrate quantum emitters into photonic integrated circuits, emphasizing the pros and cons of the integration methods applicable for specific quantum emitters. Based on our thorough comparison we give our perspective on the most promising approaches and how to overcome the remaining challenges.
{"title":"Scalable integration of quantum emitters into photonic integrated circuits","authors":"Marc Sartison, Oscar Camacho Ibarra, Ioannis Caltzidis, D. Reuter, K. Jöns","doi":"10.1088/2633-4356/ac6f3e","DOIUrl":"https://doi.org/10.1088/2633-4356/ac6f3e","url":null,"abstract":"\u0000 Scaling up photonic quantum devices to reach complexities allowing to solve real-world problems requires a platform enabling scalable integration of solid-state quantum emitter with a high yield. Their nanometer-size together with their excellent quantum optical properties make them the ideal candidates for on-chip photonic quantum technologies. However, robust, scalable integration remains elusive. Here, we discuss the state-of-the-art methods to integrate quantum emitters into photonic integrated circuits, emphasizing the pros and cons of the integration methods applicable for specific quantum emitters. Based on our thorough comparison we give our perspective on the most promising approaches and how to overcome the remaining challenges.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128075369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.1088/2633-4356/ac55fb
K. Goh, L. Krivitsky, D. Polla
The materials challenge is often a major hurdle for translating good ideas in science into technologies. This is no different in the arena of quantum technologies which has seen a resurgence of interest in the last decade. This perspective provides a unique insight into the recent collaborative works by research groups in Singapore to surmount key quantum materials and processing bottlenecks that have impeded quantum technologies in the areas of sensing, computing, and communications. We highlight recent important materials related breakthroughs that have made possible novel advancements such as integrated ion traps, light frequency conversion, highly efficient cryogenic contacts to atomically thin quantum devices, and gate defined quantum dots, to name just a few. We also discuss the potential applications and conclude with our perspective on the remaining challenges to be addressed and the prospects enabled by these materials advances for future collaborations and co-developments to advance quantum technologies.
{"title":"Quantum technologies for engineering: the materials challenge","authors":"K. Goh, L. Krivitsky, D. Polla","doi":"10.1088/2633-4356/ac55fb","DOIUrl":"https://doi.org/10.1088/2633-4356/ac55fb","url":null,"abstract":"\u0000 The materials challenge is often a major hurdle for translating good ideas in science into technologies. This is no different in the arena of quantum technologies which has seen a resurgence of interest in the last decade. This perspective provides a unique insight into the recent collaborative works by research groups in Singapore to surmount key quantum materials and processing bottlenecks that have impeded quantum technologies in the areas of sensing, computing, and communications. We highlight recent important materials related breakthroughs that have made possible novel advancements such as integrated ion traps, light frequency conversion, highly efficient cryogenic contacts to atomically thin quantum devices, and gate defined quantum dots, to name just a few. We also discuss the potential applications and conclude with our perspective on the remaining challenges to be addressed and the prospects enabled by these materials advances for future collaborations and co-developments to advance quantum technologies.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123155103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-15DOI: 10.1088/2633-4356/aca3f2
C. Becher, Wei-Chao Gao, S. Kar, Christian D. Marciniak, T. Monz, J. Bartholomew, P. Goldner, H. Loh, E. Marcellina, K. Goh, Teck Seng Koh, B. Weber, Zhao Mu, Jeng-Yuan Tsai, Q. Yan, Tobias Huber, S. Höfling, S. Gyger, S. Steinhauer, V. Zwiller
Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.
{"title":"2023 roadmap for materials for quantum technologies","authors":"C. Becher, Wei-Chao Gao, S. Kar, Christian D. Marciniak, T. Monz, J. Bartholomew, P. Goldner, H. Loh, E. Marcellina, K. Goh, Teck Seng Koh, B. Weber, Zhao Mu, Jeng-Yuan Tsai, Q. Yan, Tobias Huber, S. Höfling, S. Gyger, S. Steinhauer, V. Zwiller","doi":"10.1088/2633-4356/aca3f2","DOIUrl":"https://doi.org/10.1088/2633-4356/aca3f2","url":null,"abstract":"\u0000 Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125736284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-10DOI: 10.1088/2633-4356/ac603e
Cori Haws, B. Guha, E. Perez, M. Davanco, J. Song, K. Srinivasan, L. Sapienza
The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broad-band reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes containing InAs quantum dots and which have dimensions up to about 260 μm x 80 μm onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 105 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanopho- tonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.
结合不同材料的能力使得在单一材料系统中无法找到或利用的互补特性和设备工程相结合。在量子纳米光子学中，人们可能希望通过结合III-V半导体中有效的经典和量子光发射，硅基材料中可实现的低损耗光传播，铌酸锂的快速电光特性，以及用于局部电场应用或发射体电注入的宽带反射器和/或埋地金属触点来增加设备功能。然而，在单一晶圆上组合不同的材料是具有挑战性的，并且可能导致低再现性和/或低产量。例如，直接外延生长需要晶格匹配以生产无缺陷的薄膜，晶圆键合需要相当大且昂贵的工艺开发以获得高键合强度和良率。我们提出了一种转移印刷技术，该技术基于去除独立膜阵列并使用热释放胶带辅助工艺将其沉积到宿主材料上。这种方法是通用的，因为它对传输和宿主材料的限制有限。特别是，我们将包含InAs量子点的190 nm厚的GaAs膜转移到镀金硅衬底上，其尺寸约为260 μm x 80 μm。我们表明，背反射镜的存在与微柱的蚀刻相结合，显着提高了从单个量子点线提取量子光的效率，达到超过8105光子每秒的光子通量。该通量比同一芯片上柱外发射器测量到的最高计数率高4倍。鉴于其通用性和易于处理，该技术为实现混合量子纳米补强器件提供了一条途径，该器件几乎结合了任何材料，其中独立膜可以在任何宿主基底上制造，没有特定的兼容性问题和/或要求。
{"title":"Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters","authors":"Cori Haws, B. Guha, E. Perez, M. Davanco, J. Song, K. Srinivasan, L. Sapienza","doi":"10.1088/2633-4356/ac603e","DOIUrl":"https://doi.org/10.1088/2633-4356/ac603e","url":null,"abstract":"\u0000 The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broad-band reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes containing InAs quantum dots and which have dimensions up to about 260 μm x 80 μm onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 105 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanopho- tonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133699953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-24DOI: 10.1088/2633-4356/ac75a6
Joseph Sykes, R. Barnett
Local topological markers are effective tools for determining the topological properties of both homogeneous and inhomogeneous systems. The Chern marker is an established topological marker that has previously been shown to effectively reveal the topological properties of 2D systems. In previous work a topological marker was developed that can be applied to 1D time-dependent systems which can be used to explore their topological properties, like charge pumping under the presence of disorder. In this paper, we show how to alter the 1D marker so that it can be applied to quasiperiodic and aperiodic systems. We then verify its effectiveness against different quasicrystal Hamiltonians, some which have been addressed in previous studies using existing methods, and others which possess topological structures that have been largely unexplored. We also demonstrate that the altered 1D marker can be productively applied to systems that are fully aperiodic.
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