Pub Date : 2022-01-17DOI: 10.1088/2633-4356/ac70a2
Zach Degnan, Xin He, Alejandro G. Frieiro, Y. Sachkou, A. Fedorov, P. Jacobson
Substrate material imperfections and surface losses are one of the major factors limiting superconducting quantum circuitry from reaching the scale and complexity required to build a practical quantum computer. One potential path towards higher coherence of superconducting quantum devices is to explore new substrate materials with a reduced density of imperfections due to inherently different surface chemistries. Here, we examine two ternary metal oxide materials, spinel (MgAl2O4) and lanthanum aluminate (LaAlO3), with a focus on surface and interface characterization and preparation. Devices fabricated on LaAlO3 have quality factors three times higher than those of earlier devices, which we attribute to a reduction in the interfacial disorder. MgAl2O4) is a new material in superconducting quantum devices, and even in the presence of significant surface disorder, it consistently outperforms LaAlO3. Our results highlight the importance of materials exploration, substrate preparation, and characterization for identifying materials suitable for high-performance superconducting quantum circuitry.
{"title":"Ternary metal oxide substrates for superconducting circuits","authors":"Zach Degnan, Xin He, Alejandro G. Frieiro, Y. Sachkou, A. Fedorov, P. Jacobson","doi":"10.1088/2633-4356/ac70a2","DOIUrl":"https://doi.org/10.1088/2633-4356/ac70a2","url":null,"abstract":"\u0000 Substrate material imperfections and surface losses are one of the major factors limiting superconducting quantum circuitry from reaching the scale and complexity required to build a practical quantum computer. One potential path towards higher coherence of superconducting quantum devices is to explore new substrate materials with a reduced density of imperfections due to inherently different surface chemistries. Here, we examine two ternary metal oxide materials, spinel (MgAl2O4) and lanthanum aluminate (LaAlO3), with a focus on surface and interface characterization and preparation. Devices fabricated on LaAlO3 have quality factors three times higher than those of earlier devices, which we attribute to a reduction in the interfacial disorder. MgAl2O4) is a new material in superconducting quantum devices, and even in the presence of significant surface disorder, it consistently outperforms LaAlO3. Our results highlight the importance of materials exploration, substrate preparation, and characterization for identifying materials suitable for high-performance superconducting quantum circuitry.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132683894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-15DOI: 10.1088/2633-4356/ac50f8
M. Müller, Thomas Luschmann, A. Faltermeier, S. Weichselbaumer, L. Koch, Gerhard B. P. Huber, H. Schumacher, N. Ubbelohde, D. Reifert, T. Scheller, F. Deppe, A. Marx, S. Filipp, M. Althammer, R. Gross, H. Huebl
We systematically study the performance of compact lumped element planar microwave $mathrm{Nb_{70}Ti_{30}N}$ (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at $T=2.2$ K, we find internal quality factors $Q_{mathrm{int}}simeq$ $2cdot10^5$ for NbTiN resonators grown on pristine Si substrates. In addition, we investigate the $Q$-factors of the resonators on pristine Si substrates at millikelvin temperatures to asses their applicability for quantum applications. We find $Q_{mathrm{int}}simeq$ $2cdot10^5$ in the single photon regime and $Q_{mathrm{int}}simeq$ $5cdot10^5$ in the high power regime at $T=7$ mK. From the excellent performance of our resonators over a broad temperature and magnetic field range, we conclude that NbTiN deposited on Si (100) substrates, where the suface oxide has been removed, constitutes a promising material platform for electron spin resonance and ferromagnetic resonance experiments using superconducting planar microwave resonators.
{"title":"Magnetic field robust high quality factor NbTiN superconducting microwave resonators","authors":"M. Müller, Thomas Luschmann, A. Faltermeier, S. Weichselbaumer, L. Koch, Gerhard B. P. Huber, H. Schumacher, N. Ubbelohde, D. Reifert, T. Scheller, F. Deppe, A. Marx, S. Filipp, M. Althammer, R. Gross, H. Huebl","doi":"10.1088/2633-4356/ac50f8","DOIUrl":"https://doi.org/10.1088/2633-4356/ac50f8","url":null,"abstract":"\u0000 We systematically study the performance of compact lumped element planar microwave $mathrm{Nb_{70}Ti_{30}N}$ (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at $T=2.2$ K, we find internal quality factors $Q_{mathrm{int}}simeq$ $2cdot10^5$ for NbTiN resonators grown on pristine Si substrates. In addition, we investigate the $Q$-factors of the resonators on pristine Si substrates at millikelvin temperatures to asses their applicability for quantum applications. We find $Q_{mathrm{int}}simeq$ $2cdot10^5$ in the single photon regime and $Q_{mathrm{int}}simeq$ $5cdot10^5$ in the high power regime at $T=7$ mK. From the excellent performance of our resonators over a broad temperature and magnetic field range, we conclude that NbTiN deposited on Si (100) substrates, where the suface oxide has been removed, constitutes a promising material platform for electron spin resonance and ferromagnetic resonance experiments using superconducting planar microwave resonators.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128442183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-09DOI: 10.1088/2633-4356/ac5ac4
Yuta Tsuchimoto, M. Kroner
Quantum transducers between microwave and optical photons are essential for long-distance quantum networks based on superconducting qubits. An optically active self-assembled quantum dot molecule (QDM) is an attractive platform for the implementation of a quantum transducer because an exciton in a QDM can be efficiently coupled to both optical and microwave fields at the single-photon level. Recently, the transduction between microwave and optical photons has been demonstrated with a QDM integrated with a superconducting resonator. In this paper, we present a design of a QD-high impedance resonator device with a low microwave loss and an expected large single-microwave photon coupling strength of 100s of MHz. We integrate self-assembled QDs onto a high-impedance superconducting resonator using a transfer printing technique and demonstrate a low-microwave loss rate of 1.8 MHz and gate tunability of the QDs. The corresponding microwave photon decay time of 88 ns is longer than the time necessary for the optical-microwave transduction process as well as the transmon-resonator swap operation time. This feature will facilitate efficient quantum transduction between an optical and microwave qubit.
{"title":"Low-loss high-impedance circuit for quantum transduction between optical and microwave photons","authors":"Yuta Tsuchimoto, M. Kroner","doi":"10.1088/2633-4356/ac5ac4","DOIUrl":"https://doi.org/10.1088/2633-4356/ac5ac4","url":null,"abstract":"\u0000 Quantum transducers between microwave and optical photons are essential for long-distance quantum networks based on superconducting qubits. An optically active self-assembled quantum dot molecule (QDM) is an attractive platform for the implementation of a quantum transducer because an exciton in a QDM can be efficiently coupled to both optical and microwave fields at the single-photon level. Recently, the transduction between microwave and optical photons has been demonstrated with a QDM integrated with a superconducting resonator. In this paper, we present a design of a QD-high impedance resonator device with a low microwave loss and an expected large single-microwave photon coupling strength of 100s of MHz. We integrate self-assembled QDs onto a high-impedance superconducting resonator using a transfer printing technique and demonstrate a low-microwave loss rate of 1.8 MHz and gate tunability of the QDs. The corresponding microwave photon decay time of 88 ns is longer than the time necessary for the optical-microwave transduction process as well as the transmon-resonator swap operation time. This feature will facilitate efficient quantum transduction between an optical and microwave qubit.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123750323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-25DOI: 10.1088/2633-4356/ac4fba
S. G. Schellingerhout, Eline J. de Jong, M. Gomanko, Xin Guan, Yifan Jiang, M. Hoskam, Jason Jung, S. Koelling, O. Moutanabbir, M. Verheijen, S. Frolov, E. Bakkers
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can host few-electron quantum dots and ballistic quantum wires with opportunities for control of electron spins and other quantum degrees of freedom. Here, we report the fabrication of PbTe nanowires by molecular beam epitaxy. We achieve defect-free single crystalline PbTe with large aspect ratios up to 50 suitable for quantum devices. Furthermore, by fabricating a single nanowire field effect transistor, we attain bipolar transport, extract the bandgap and observe Fabry-Pérot oscillations of conductance, a signature of quasiballistic transmission.
{"title":"Growth of PbTe nanowires by molecular beam epitaxy","authors":"S. G. Schellingerhout, Eline J. de Jong, M. Gomanko, Xin Guan, Yifan Jiang, M. Hoskam, Jason Jung, S. Koelling, O. Moutanabbir, M. Verheijen, S. Frolov, E. Bakkers","doi":"10.1088/2633-4356/ac4fba","DOIUrl":"https://doi.org/10.1088/2633-4356/ac4fba","url":null,"abstract":"\u0000 Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can host few-electron quantum dots and ballistic quantum wires with opportunities for control of electron spins and other quantum degrees of freedom. Here, we report the fabrication of PbTe nanowires by molecular beam epitaxy. We achieve defect-free single crystalline PbTe with large aspect ratios up to 50 suitable for quantum devices. Furthermore, by fabricating a single nanowire field effect transistor, we attain bipolar transport, extract the bandgap and observe Fabry-Pérot oscillations of conductance, a signature of quasiballistic transmission.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"264 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127371043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-12DOI: 10.1088/2633-4356/ac2ef7
O. Kennedy, James O'Sullivan, C. Zollitsch, Christopher N. Thomas, S. Withington, J. Morton
{"title":"Strain in heterogeneous quantum devices with atomic layer deposition","authors":"O. Kennedy, James O'Sullivan, C. Zollitsch, Christopher N. Thomas, S. Withington, J. Morton","doi":"10.1088/2633-4356/ac2ef7","DOIUrl":"https://doi.org/10.1088/2633-4356/ac2ef7","url":null,"abstract":"","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125279189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-17DOI: 10.1088/2633-4356/ac5d1d
B. Voisin, K. S. H. Ng, J. Salfi, M. Usman, J. C. Wong, A. Tankasala, B. C. Johnson, J. McCallum, L. Hutin, B. Bertrand, M. Vinet, N. Valanoor, M. Simmons, R. Rahman, L. Hollenberg, S. Rogge
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.8% and their wave function imaged using spatially resolved spectroscopy. A prevalence of the out-of-plane valleys is confirmed from the real-space images, and a combination of theoretical modelling tools is used to assess how this valley repopulation effect can yield isotropic exchange and tunnel interactions in the xy-plane relevant for atomically precise donor qubit devices. Finally, the residual presence of in-plane valleys is evidenced by a Fourier analysis of both experimental and theoretical images, and atomistic calculations highlight the importance of higher orbital excited states to obtain a precise relationship between valley population and strain. Controlling the valley degree of freedom in engineered strained epilayers provides a new competitive asset for the development of donor-based quantum technologies in silicon.
{"title":"Valley population of donor states in highly strained silicon","authors":"B. Voisin, K. S. H. Ng, J. Salfi, M. Usman, J. C. Wong, A. Tankasala, B. C. Johnson, J. McCallum, L. Hutin, B. Bertrand, M. Vinet, N. Valanoor, M. Simmons, R. Rahman, L. Hollenberg, S. Rogge","doi":"10.1088/2633-4356/ac5d1d","DOIUrl":"https://doi.org/10.1088/2633-4356/ac5d1d","url":null,"abstract":"\u0000 Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.8% and their wave function imaged using spatially resolved spectroscopy. A prevalence of the out-of-plane valleys is confirmed from the real-space images, and a combination of theoretical modelling tools is used to assess how this valley repopulation effect can yield isotropic exchange and tunnel interactions in the xy-plane relevant for atomically precise donor qubit devices. Finally, the residual presence of in-plane valleys is evidenced by a Fourier analysis of both experimental and theoretical images, and atomistic calculations highlight the importance of higher orbital excited states to obtain a precise relationship between valley population and strain. Controlling the valley degree of freedom in engineered strained epilayers provides a new competitive asset for the development of donor-based quantum technologies in silicon.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122878206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-08-06DOI: 10.1088/2633-4356/ac168c
C. Taballione, R. van der Meer, H. Snijders, P. Hooijschuur, J. Epping, M. de Goede, B. Kassenberg, P. Venderbosch, C. Toebes, H. H. van den Vlekkert, P. Pinkse, J. Renema
Photonic processors are pivotal for both quantum and classical information processing tasks using light. In particular, linear optical quantum information processing requires both large-scale and low-loss programmable photonic processors. In this paper, we report the demonstration of the largest universal quantum photonic processor to date: a low-loss 12-mode fully tunable linear interferometer with all-to-all mode coupling based on stoichiometric silicon nitride waveguides.
{"title":"A universal fully reconfigurable 12-mode quantum photonic processor","authors":"C. Taballione, R. van der Meer, H. Snijders, P. Hooijschuur, J. Epping, M. de Goede, B. Kassenberg, P. Venderbosch, C. Toebes, H. H. van den Vlekkert, P. Pinkse, J. Renema","doi":"10.1088/2633-4356/ac168c","DOIUrl":"https://doi.org/10.1088/2633-4356/ac168c","url":null,"abstract":"Photonic processors are pivotal for both quantum and classical information processing tasks using light. In particular, linear optical quantum information processing requires both large-scale and low-loss programmable photonic processors. In this paper, we report the demonstration of the largest universal quantum photonic processor to date: a low-loss 12-mode fully tunable linear interferometer with all-to-all mode coupling based on stoichiometric silicon nitride waveguides.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122570334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-20DOI: 10.1088/2633-4356/ac4a75
G. Catelani, J. Pekola
The fundamental excitations in superconductors – Bogoliubov quasiparticles – can be either a resource or a liability in superconducting devices: they are what enables photon detection in microwave kinetic inductance detectors, but they are a source of errors in qubits and electron pumps. To improve operation of the latter devices, ways to mitigate quasiparticle effects have been devised; in particular, combining different materials quasiparticles can be trapped where they do no harm and their generation can be impeded. We review recent developments in these mitigation efforts and discuss open questions.
{"title":"Using materials for quasiparticle engineering","authors":"G. Catelani, J. Pekola","doi":"10.1088/2633-4356/ac4a75","DOIUrl":"https://doi.org/10.1088/2633-4356/ac4a75","url":null,"abstract":"\u0000 The fundamental excitations in superconductors – Bogoliubov quasiparticles – can be either a resource or a liability in superconducting devices: they are what enables photon detection in microwave kinetic inductance detectors, but they are a source of errors in qubits and electron pumps. To improve operation of the latter devices, ways to mitigate quasiparticle effects have been devised; in particular, combining different materials quasiparticles can be trapped where they do no harm and their generation can be impeded. We review recent developments in these mitigation efforts and discuss open questions.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121660400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-06DOI: 10.1088/2633-4356/ac11c3
Konrad Tschernig, R. Lo Franco, M. Ivanov, M. Bandres, K. Busch, A. Pérez-Leija
We study theoretically the evolution of entangled non-Gaussian two-photon states in disordered topological lattices. Specifically, we consider spatially entangled two- photon states, modulated by Laguerre polynomials up to the 3rd order, which feature ring-shaped spatial and spectral correlation patterns. Such states are discrete analogs of photon-subtracted squeezed states, which are ubiquitous in optical quantum infor- mation processing or sensing applications. We find that, in general, a higher degree of entanglement coincides with a loss of topological protection against disorder, this is in line with previous results for Gaussian two-photon states. However, we identify a particular regime in the parameter space of the considered non-Gaussian states, where the situation is reversed and an increase of entanglement can be beneficial for the transport of two-photon quantum states through disordered regions.
{"title":"Topological protection of highly entangled non-Gaussian two-photon states","authors":"Konrad Tschernig, R. Lo Franco, M. Ivanov, M. Bandres, K. Busch, A. Pérez-Leija","doi":"10.1088/2633-4356/ac11c3","DOIUrl":"https://doi.org/10.1088/2633-4356/ac11c3","url":null,"abstract":"We study theoretically the evolution of entangled non-Gaussian two-photon states in disordered topological lattices. Specifically, we consider spatially entangled two- photon states, modulated by Laguerre polynomials up to the 3rd order, which feature ring-shaped spatial and spectral correlation patterns. Such states are discrete analogs of photon-subtracted squeezed states, which are ubiquitous in optical quantum infor- mation processing or sensing applications. We find that, in general, a higher degree of entanglement coincides with a loss of topological protection against disorder, this is in line with previous results for Gaussian two-photon states. However, we identify a particular regime in the parameter space of the considered non-Gaussian states, where the situation is reversed and an increase of entanglement can be beneficial for the transport of two-photon quantum states through disordered regions.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"1 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113932508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1088/2633-4356/ac40f4
Timothy Camenzind, A. Elsayed, F. Mohiyaddin, Ruoyu Li, S. Kubicek, J. Jussot, P. Van Dorpe, B. Govoreanu, I. Radu, D. Zumbühl
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full CMOS process and of very thin oxide below a thickness of unit[10]{nm}, we report a record mobility of unit[$17.5times 10^{3}$]{cm$^2$/Vs} indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.
{"title":"High mobility SiMOSFETs fabricated in a full 300 mm CMOS process","authors":"Timothy Camenzind, A. Elsayed, F. Mohiyaddin, Ruoyu Li, S. Kubicek, J. Jussot, P. Van Dorpe, B. Govoreanu, I. Radu, D. Zumbühl","doi":"10.1088/2633-4356/ac40f4","DOIUrl":"https://doi.org/10.1088/2633-4356/ac40f4","url":null,"abstract":"\u0000 The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full CMOS process and of very thin oxide below a thickness of unit[10]{nm}, we report a record mobility of unit[$17.5times 10^{3}$]{cm$^2$/Vs} indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124908312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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