2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724509
Seyed Amir Fouad Farshchi Yazdi, M. Garavaglia, A. Ghisi, A. Corigliano
In the thermo-compressive, silicon-to-silicon wafer bonding process, due to the residual stresses, the wafer warps, thus affecting the structural integrity and the performance of the devices. The aim of this numerical research is to i) get insights into the sources of the residual stresses, and ii) to minimize the residual stresses and the final warpage of the silicon wafers in glass frit bonding. The complete thermo-mechanical bonding process is simulated with a commercial finite element code to evaluate the sources of the residual stresses in the bonded wafers. The glass frit layer is modeled with a bilinear traction-separation interface law to reduce the computational costs. To validate the model, numerical results have been compared with experimental measurements. The overall deformed convex shape of the bonded wafers and the numerical results are in agreement with wafers produced in the bonding chamber. To reduce the wafer warpage, a shape optimization by means of reducing the thickness of the silicon wafer at the center is proposed. The results of the 3D simulation regarding the reduced-thickness wafers show up to a 36% reduction in the final warpage in comparison with the plane silicon wafers.
{"title":"Modelling and Simulation of Glass Frit Bonding of Silicon Wafers","authors":"Seyed Amir Fouad Farshchi Yazdi, M. Garavaglia, A. Ghisi, A. Corigliano","doi":"10.1109/EUROSIME.2019.8724509","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724509","url":null,"abstract":"In the thermo-compressive, silicon-to-silicon wafer bonding process, due to the residual stresses, the wafer warps, thus affecting the structural integrity and the performance of the devices. The aim of this numerical research is to i) get insights into the sources of the residual stresses, and ii) to minimize the residual stresses and the final warpage of the silicon wafers in glass frit bonding. The complete thermo-mechanical bonding process is simulated with a commercial finite element code to evaluate the sources of the residual stresses in the bonded wafers. The glass frit layer is modeled with a bilinear traction-separation interface law to reduce the computational costs. To validate the model, numerical results have been compared with experimental measurements. The overall deformed convex shape of the bonded wafers and the numerical results are in agreement with wafers produced in the bonding chamber. To reduce the wafer warpage, a shape optimization by means of reducing the thickness of the silicon wafer at the center is proposed. The results of the 3D simulation regarding the reduced-thickness wafers show up to a 36% reduction in the final warpage in comparison with the plane silicon wafers.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131104962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724530
Mike Schwarz, V. Senz, A. Dannenberg, W. Feiler, F. Heuck, T. Friedrich, C. Sorger, J. Franz
Nowadays, the demand for a MEMS Development/Design Kit (MDK) is even more in the focus than ever. In order to achieve a high quality and cost effectiveness in automotive and consumer applications, an advanced design flow for the MEMS (Micro Electro Mechanical Systems) element is required to fulfill these criteria. In this paper, a methodology and design flow is presented to ensure an integration of active semiconductor devices and components into micromechanical sensors. The methodology considers cross coupling effects and limitations of the electrical active device and mechanical MEMS. An example with mechanical constraints is presented and discussed and finally the results of the simulation methodology are compared with fabricated devices in terms of accuracy and capability of the design flow.
{"title":"Simulation Methodology for Active Semiconductor Devices in MEMS","authors":"Mike Schwarz, V. Senz, A. Dannenberg, W. Feiler, F. Heuck, T. Friedrich, C. Sorger, J. Franz","doi":"10.1109/EUROSIME.2019.8724530","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724530","url":null,"abstract":"Nowadays, the demand for a MEMS Development/Design Kit (MDK) is even more in the focus than ever. In order to achieve a high quality and cost effectiveness in automotive and consumer applications, an advanced design flow for the MEMS (Micro Electro Mechanical Systems) element is required to fulfill these criteria. In this paper, a methodology and design flow is presented to ensure an integration of active semiconductor devices and components into micromechanical sensors. The methodology considers cross coupling effects and limitations of the electrical active device and mechanical MEMS. An example with mechanical constraints is presented and discussed and finally the results of the simulation methodology are compared with fabricated devices in terms of accuracy and capability of the design flow.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121282650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724526
A. Halbach, P. Gijsenbergh, Y. Jeong, M. Billen, C. Chare, H. Gao, G. Torri, D. Cheyns, X. Rottenberg, V. Rochus
In this paper, a physically representative electric equivalent lumped model of a fabricated 600 um diameter polymer-based piezoelectric micromachined ultrasonic transducer (PMUT) is detailed. All parameter values in the lumped model are identified based on electrical impedance measurements in air and in vacuum. The model is then used to predict the emitted ultrasound pressure, the radiated acoustic power and the overall power efficiency. The predictions are validated with experimental data and finite element simulations. Finally, the model is used to estimate the minimum PMUT array size required to reach the expected haptic sensing threshold at a given focus point.
{"title":"Modelling of display-compatible piezoelectric micromachined ultrasonic transducers for haptic feedback","authors":"A. Halbach, P. Gijsenbergh, Y. Jeong, M. Billen, C. Chare, H. Gao, G. Torri, D. Cheyns, X. Rottenberg, V. Rochus","doi":"10.1109/EUROSIME.2019.8724526","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724526","url":null,"abstract":"In this paper, a physically representative electric equivalent lumped model of a fabricated 600 um diameter polymer-based piezoelectric micromachined ultrasonic transducer (PMUT) is detailed. All parameter values in the lumped model are identified based on electrical impedance measurements in air and in vacuum. The model is then used to predict the emitted ultrasound pressure, the radiated acoustic power and the overall power efficiency. The predictions are validated with experimental data and finite element simulations. Finally, the model is used to estimate the minimum PMUT array size required to reach the expected haptic sensing threshold at a given focus point.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116212098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724566
N. Pflügler, G. M. Reuther, M. Goroll, R. Pufall, B. Wunderle
Different test methods are used within the microelectronics community to quantify adhesion of material combinations interacting inside the package. Button Shear Tests or Bending Tests are popular test methods for studying moulding compound adhesion on various surfaces. The measured data obtained from these tests is a superposition of the characteristics of the interface, the experimental setup, and the test vehicle's geometry and materials used. Compressive contact, for example, between shear or bending tool and the sample might lead to plastic deformation. Nanoindentation on bulk moulding compound strips showed that plastic deformation under compressive loading does occur. Low indentation forces lead to a levelling of the rough surface. For higher forces residual imprints after indentation can be as deep as $15 mu mathrm {m}$. Test vehicles are very often only a few millimetres in size. Thus, sub-micron accuracy for displacement measurements becomes a necessity when extracting energies from force-displacement curves. Plastic deformation at the shear contact then needs to be subtracted from measurement data in order to achieve accurate adhesion results.
微电子界使用不同的测试方法来量化在封装内部相互作用的材料组合的粘附性。按钮剪切试验或弯曲试验是研究模塑复合材料在各种表面上粘附性的常用试验方法。从这些测试中获得的测量数据是界面特性、实验装置、测试车辆的几何形状和使用的材料的叠加。例如，剪切或弯曲工具与样品之间的压缩接触可能导致塑性变形。体模复合条上的纳米压痕表明，在压缩载荷作用下，复合条确实发生了塑性变形。低压痕力导致粗糙表面的平整。对于更高的力，压痕后的残余压痕可深至$15 mu mathm {m}$。测试车辆的尺寸通常只有几毫米。因此，当从力-位移曲线中提取能量时，亚微米精度的位移测量成为必要。然后需要从测量数据中减去剪切接触处的塑性变形，以获得准确的粘附结果。
{"title":"Plastic deformation and failure modes of moulding compounds during indentation loading and their importance for the quantitative characterisation of adhesion","authors":"N. Pflügler, G. M. Reuther, M. Goroll, R. Pufall, B. Wunderle","doi":"10.1109/EUROSIME.2019.8724566","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724566","url":null,"abstract":"Different test methods are used within the microelectronics community to quantify adhesion of material combinations interacting inside the package. Button Shear Tests or Bending Tests are popular test methods for studying moulding compound adhesion on various surfaces. The measured data obtained from these tests is a superposition of the characteristics of the interface, the experimental setup, and the test vehicle's geometry and materials used. Compressive contact, for example, between shear or bending tool and the sample might lead to plastic deformation. Nanoindentation on bulk moulding compound strips showed that plastic deformation under compressive loading does occur. Low indentation forces lead to a levelling of the rough surface. For higher forces residual imprints after indentation can be as deep as $15 mu mathrm {m}$. Test vehicles are very often only a few millimetres in size. Thus, sub-micron accuracy for displacement measurements becomes a necessity when extracting energies from force-displacement curves. Plastic deformation at the shear contact then needs to be subtracted from measurement data in order to achieve accurate adhesion results.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128764881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724542
R. Sethu, Lars Bergmann, M. Erstling, P. Lammert, A. Fahr, Hansika Jayawardana
Harsh wafer level probing has a higher chance of causing inter metal dielectric (IMD) cracking compared to wire bonding. This work explores the stress induced by probing by utilizing dynamic Finite Element Analysis (FEA) structural mechanics simulation. A thicker bond pad (METTHK with thickness of 3000 nm) can reduce the IMD stress caused by harsh wafer level probing.
{"title":"Numerical Simulation of Top Metal Thickness on IMD Stress due to Probing","authors":"R. Sethu, Lars Bergmann, M. Erstling, P. Lammert, A. Fahr, Hansika Jayawardana","doi":"10.1109/EUROSIME.2019.8724542","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724542","url":null,"abstract":"Harsh wafer level probing has a higher chance of causing inter metal dielectric (IMD) cracking compared to wire bonding. This work explores the stress induced by probing by utilizing dynamic Finite Element Analysis (FEA) structural mechanics simulation. A thicker bond pad (METTHK with thickness of 3000 nm) can reduce the IMD stress caused by harsh wafer level probing.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126217927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724564
M. Schulz, R. Mrossko, B. Wunderle, M. A. Ras
In this paper, a hypothesis is further investigated which states the dependence of fracture toughness on the orientation of the crack opening to the topography of the surface of the lead frame which forms the interface with the EMC. Additionally, the size effect of the specimen width is investigated as well.A test series using the Advanced Mixed Mode Bending method was performed using eight samples. The samples are bi-material beams which are extracted from a mold map. The sample width was varied as well as the orientation of the beam according to the topography of the lead frame. The samples are destructively tested and the measured sensor and image data are then used in a finite element analysis. A new algorithm is introduced which utilizes a digital image correlation software to extract the displacement fields from the recorded images of the beam flank. The simulation results in form of the critical energy release rate $G_{c}$ versus the corresponding mode mixity $psi$ of the eight samples are than analyzed to test the hypothesis of the orientation and the effect of the sample width as alias of the size effect.
{"title":"Advanced Mixed-Mode Bending Test: Influence of the Surface Topography on the Fracture Behavior of an EMC to Copper Lead Frame Bi-Material Interface","authors":"M. Schulz, R. Mrossko, B. Wunderle, M. A. Ras","doi":"10.1109/EUROSIME.2019.8724564","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724564","url":null,"abstract":"In this paper, a hypothesis is further investigated which states the dependence of fracture toughness on the orientation of the crack opening to the topography of the surface of the lead frame which forms the interface with the EMC. Additionally, the size effect of the specimen width is investigated as well.A test series using the Advanced Mixed Mode Bending method was performed using eight samples. The samples are bi-material beams which are extracted from a mold map. The sample width was varied as well as the orientation of the beam according to the topography of the lead frame. The samples are destructively tested and the measured sensor and image data are then used in a finite element analysis. A new algorithm is introduced which utilizes a digital image correlation software to extract the displacement fields from the recorded images of the beam flank. The simulation results in form of the critical energy release rate $G_{c}$ versus the corresponding mode mixity $psi$ of the eight samples are than analyzed to test the hypothesis of the orientation and the effect of the sample width as alias of the size effect.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125886203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724557
X.J. Zhao, H. Vries, R. Engelen, P. Watté, G. Hees
Solderjoints of LEDs mounted by SMD reflow on Cu wire assemblies can exhibit irregular shapes that are very different from the interconnects of components on normal printed circuit boards. In order to understand the effect of the irregularities on the solder interconnect reliability and the intermetallic layer growth, the solder degradation was studied by setting up a series of accelerating tests and finite element modelling. In addition, the sensitivity of design parameters on the aging behavior was analyzed. It turns out that the cyclic fatigue of the solder interconnects due to thermal expansion mismatch is not as critical as the one from assemblies on traditional circuit boards. However, the decreasing interconnect strength due to the embrittlement of the intermetallic compound (IMC) is more critical and some optimization must be considered in the design.
{"title":"Solder interconnect degradation with irregular joint shape","authors":"X.J. Zhao, H. Vries, R. Engelen, P. Watté, G. Hees","doi":"10.1109/EUROSIME.2019.8724557","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724557","url":null,"abstract":"Solderjoints of LEDs mounted by SMD reflow on Cu wire assemblies can exhibit irregular shapes that are very different from the interconnects of components on normal printed circuit boards. In order to understand the effect of the irregularities on the solder interconnect reliability and the intermetallic layer growth, the solder degradation was studied by setting up a series of accelerating tests and finite element modelling. In addition, the sensitivity of design parameters on the aging behavior was analyzed. It turns out that the cyclic fatigue of the solder interconnects due to thermal expansion mismatch is not as critical as the one from assemblies on traditional circuit boards. However, the decreasing interconnect strength due to the embrittlement of the intermetallic compound (IMC) is more critical and some optimization must be considered in the design.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127976399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724515
L. Wambera, K. Meier, R. Höhne, Björn Böhme, Christian Götze, J. Paul, M. Wieland, K. Bock
In this study, a universal modular test setup for a variety of high density package concepts with ball pitches smaller than 0.4 mm is presented. It enables bias loading and online monitoring of multiple test specimens during accelerated environment stress testing according to AEC grade 1 conditions. Humidity is a critical factor when reducing ball pitch and introducing innovative casting compounds (e. g. epoxy resins) for electronic packaging. Therefore, its influence has to be investigated and a reliable test setup is required. The focus of this study is on the overall performance of the test setup under test conditions for storage at temperature and humidity. Experiments during board development were performed, including tests on material behaviour and surface effects due to narrow spacing between neighbouring traces, pads, or grid dimensions. The functionality of the developed test setup is demonstrated by electrical measurements at specimen level and setup system level before, during, and after temperature humidity storage. Potential failure modes at die, package, and board level can be investigated with the presented test setup.
{"title":"Development of a Modular Test Setup for Reliability Testing under Harsh Environment Conditions","authors":"L. Wambera, K. Meier, R. Höhne, Björn Böhme, Christian Götze, J. Paul, M. Wieland, K. Bock","doi":"10.1109/EUROSIME.2019.8724515","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724515","url":null,"abstract":"In this study, a universal modular test setup for a variety of high density package concepts with ball pitches smaller than 0.4 mm is presented. It enables bias loading and online monitoring of multiple test specimens during accelerated environment stress testing according to AEC grade 1 conditions. Humidity is a critical factor when reducing ball pitch and introducing innovative casting compounds (e. g. epoxy resins) for electronic packaging. Therefore, its influence has to be investigated and a reliable test setup is required. The focus of this study is on the overall performance of the test setup under test conditions for storage at temperature and humidity. Experiments during board development were performed, including tests on material behaviour and surface effects due to narrow spacing between neighbouring traces, pads, or grid dimensions. The functionality of the developed test setup is demonstrated by electrical measurements at specimen level and setup system level before, during, and after temperature humidity storage. Potential failure modes at die, package, and board level can be investigated with the presented test setup.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129739083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724535
C. Maj, M. Szermer, P. Zając, Piotr Amrozik
One of the most crucial step in designing of MEMS devices is modelling. It allows estimating the performance of a device without its fabrication and it provides fast optimization process. Very often it is desired to perform a coupled electromechanical simulation when a device integrates sensor and read-out circuit. A classical method uses FEM simulation. Although it is very precise, it requires building 3-D model, solving complex equations and does not provide electrical simulation of IC circuit. Therefore, there are other commercial solutions available on the market that may be coupled with CADENCE environment. In this paper, we propose to use an analytical model that can be exported to CADENCE as a black-box cell described in Verilog-A language. As an example, we take MEMS Z-axis comb-drive accelerometer whose mechanical part behave like an torsional harmonic oscillator. We include also the influence of fringing field. The model is compared with MEMS+ software in terms of electrical parameters that are inputs for electrical simulation of read-out circuit.
{"title":"Analytical modelling of MEMS Z-axis comb-drive accelerometer","authors":"C. Maj, M. Szermer, P. Zając, Piotr Amrozik","doi":"10.1109/EUROSIME.2019.8724535","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724535","url":null,"abstract":"One of the most crucial step in designing of MEMS devices is modelling. It allows estimating the performance of a device without its fabrication and it provides fast optimization process. Very often it is desired to perform a coupled electromechanical simulation when a device integrates sensor and read-out circuit. A classical method uses FEM simulation. Although it is very precise, it requires building 3-D model, solving complex equations and does not provide electrical simulation of IC circuit. Therefore, there are other commercial solutions available on the market that may be coupled with CADENCE environment. In this paper, we propose to use an analytical model that can be exported to CADENCE as a black-box cell described in Verilog-A language. As an example, we take MEMS Z-axis comb-drive accelerometer whose mechanical part behave like an torsional harmonic oscillator. We include also the influence of fringing field. The model is compared with MEMS+ software in terms of electrical parameters that are inputs for electrical simulation of read-out circuit.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126648075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724558
A. Hanss, E. Liu, Muhammad Rizwan Abdullah, G. Elger
Transient thermal analysis (TTA) by experimental thermal impedance $(Z_{th})$ measurements and data simulation by transient finite element (FE) simulation are suited to investigate the thermal path and mechanical integrity of electronic devices. After calibration, the FE model can be used for failure mode analysis. In this paper first a FE model for blue Flip Chip (FC) LEDs is set-up and calibrated to the experimental data. To reduce the ambiguity of the parameter identification within the calibration process caused by the relative large number of model parameters in a transient FE simulation several sets of experimental data are measured and simulated: the LED assembled on different substrates, i.e. an AlN ceramic and a standard Al-IMS board, and similar LEDs, i.e. same LED type but different sized light emitting area (1 mm2 and 0.5 mm2). The model is calibrated in the time domain using b(z), i.e. the logarithmic time derived of $Z_{th}(z= {ln(t))}$. The least square residuum of simulated and experimental data is minimized. Different approaches of fitting are compared, i.e. fitting $b(z), Z_{th}(t)$ and the structure function, resulting in b(z) being a good option for the LED under investigation. The calibration is obtained by an optimizer in an automated workflow, i.e. using ANSYS coupled with optiSLang.After calibration the model is used to identify failures during accelerated stress test. An automatic TTA tester is used to detect changes of the Zth(t) during accelerated lifetime testing, e.g. temperature shock testing.By implementing failure into the calibrated model, e.g. cracks in the solder joint, delamination of the EPI from the redistribution layer and degradation of the dielectric layer of the Al-IMS, the calibrated model is fitted to the b(z) curves of the aged samples. The strength of the approach is demonstrated by extracting the quantitative changes of the physical parameters from the fitted model in an automatic way.
{"title":"Failure Identification in LED packages by Transient Thermal Analysis and Calibrated FE Models","authors":"A. Hanss, E. Liu, Muhammad Rizwan Abdullah, G. Elger","doi":"10.1109/EUROSIME.2019.8724558","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724558","url":null,"abstract":"Transient thermal analysis (TTA) by experimental thermal impedance $(Z_{th})$ measurements and data simulation by transient finite element (FE) simulation are suited to investigate the thermal path and mechanical integrity of electronic devices. After calibration, the FE model can be used for failure mode analysis. In this paper first a FE model for blue Flip Chip (FC) LEDs is set-up and calibrated to the experimental data. To reduce the ambiguity of the parameter identification within the calibration process caused by the relative large number of model parameters in a transient FE simulation several sets of experimental data are measured and simulated: the LED assembled on different substrates, i.e. an AlN ceramic and a standard Al-IMS board, and similar LEDs, i.e. same LED type but different sized light emitting area (1 mm2 and 0.5 mm2). The model is calibrated in the time domain using b(z), i.e. the logarithmic time derived of $Z_{th}(z= {ln(t))}$. The least square residuum of simulated and experimental data is minimized. Different approaches of fitting are compared, i.e. fitting $b(z), Z_{th}(t)$ and the structure function, resulting in b(z) being a good option for the LED under investigation. The calibration is obtained by an optimizer in an automated workflow, i.e. using ANSYS coupled with optiSLang.After calibration the model is used to identify failures during accelerated stress test. An automatic TTA tester is used to detect changes of the Zth(t) during accelerated lifetime testing, e.g. temperature shock testing.By implementing failure into the calibrated model, e.g. cracks in the solder joint, delamination of the EPI from the redistribution layer and degradation of the dielectric layer of the Al-IMS, the calibrated model is fitted to the b(z) curves of the aged samples. The strength of the approach is demonstrated by extracting the quantitative changes of the physical parameters from the fitted model in an automatic way.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121805403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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