2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724591
Arūnas Kleiva, R. Dauksevicius
This paper presents results of finite element analysis and testing of a novel frequency up-converting multi-magnet piezoelectric vibration energy harvester, which advantageously exploits multiple magnetic excitation events per single cycle of out-of-plane plucking together with amplification of driving magnet speed in order to provide sufficiently stable generation of nearly constant high average power when subjected to real-life human body movements. It is based on a cantilevered bimorph that is magnetically deflected and released (plucked) by a couple of driving magnets that are accelerated by means of magnets placed on inertial rotor. It was demonstrated that the proposed device operating in a synchronized multi-magnet excitation regime outperforms its conventional single-magnet counterparts, thereby constituting a viable vibration energy harvesting concept that addresses key challenges associated with time-varying ultralow frequency biomechanical excitations.
{"title":"Numerical and experimental study of a novel body-mounted piezoelectric energy harvester based on synchronized multi-magnet excitation","authors":"Arūnas Kleiva, R. Dauksevicius","doi":"10.1109/EUROSIME.2019.8724591","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724591","url":null,"abstract":"This paper presents results of finite element analysis and testing of a novel frequency up-converting multi-magnet piezoelectric vibration energy harvester, which advantageously exploits multiple magnetic excitation events per single cycle of out-of-plane plucking together with amplification of driving magnet speed in order to provide sufficiently stable generation of nearly constant high average power when subjected to real-life human body movements. It is based on a cantilevered bimorph that is magnetically deflected and released (plucked) by a couple of driving magnets that are accelerated by means of magnets placed on inertial rotor. It was demonstrated that the proposed device operating in a synchronized multi-magnet excitation regime outperforms its conventional single-magnet counterparts, thereby constituting a viable vibration energy harvesting concept that addresses key challenges associated with time-varying ultralow frequency biomechanical excitations.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132848929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724548
D. Bülz, Petra Streit, R. Forke, T. Otto
Self-heating of electric components is an important design criterion for electronic circuits. Using additive manufacturing processes like low temperature printing of interconnects to replace conventional cables, is beneficial in terms of customizability and flexibility. However, the materials used to print interconnects often have lower conductivities than conventional bulk-metal leads. This causes an increase of temperature for interconnects with equal cross-section due to the higher power density. Using a heat spreading substrate can be advantageous for cooling the interconnects and therefore saving material which otherwise would be needed to compensate the higher resistivity. In this work, an analytical model is used to calculate the temperature of printed interconnects based on their cross-section profile and the free space on the substrate. The model allows to vary the cross-section geometry by adding up multiple profiles in order to emulate interconnects printed with multiple dispense cycles on top or next to each other. Therefore, it can be used to find suitable print configurations for different power requirements. The results are verified by comparison with FEM simulations and experimentally obtained data.
{"title":"Simulation of Self-Heating of Printed Interconnects for Thermal Design","authors":"D. Bülz, Petra Streit, R. Forke, T. Otto","doi":"10.1109/EUROSIME.2019.8724548","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724548","url":null,"abstract":"Self-heating of electric components is an important design criterion for electronic circuits. Using additive manufacturing processes like low temperature printing of interconnects to replace conventional cables, is beneficial in terms of customizability and flexibility. However, the materials used to print interconnects often have lower conductivities than conventional bulk-metal leads. This causes an increase of temperature for interconnects with equal cross-section due to the higher power density. Using a heat spreading substrate can be advantageous for cooling the interconnects and therefore saving material which otherwise would be needed to compensate the higher resistivity. In this work, an analytical model is used to calculate the temperature of printed interconnects based on their cross-section profile and the free space on the substrate. The model allows to vary the cross-section geometry by adding up multiple profiles in order to emulate interconnects printed with multiple dispense cycles on top or next to each other. Therefore, it can be used to find suitable print configurations for different power requirements. The results are verified by comparison with FEM simulations and experimentally obtained data.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117303348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724534
M. Schmidt, Y. Maniar, R. Ratchev, A. Kabakchiev, M. Guyenot, H. Walter, M. Schneider-Ramelow
In the field of electric and autonomous driving applications, there is currently an increasing demand for high-performance PCB materials, which can meet the requirements of high durability and long-term stability. For example, high temperature PCB base materials with an increased glass transition temperature offer new possibilities and facilitate new fields of usage. However, to the best of our knowledge, their thermomechanical properties on the local scale of glass fiber and resin matrix regions are not widely reported yet. Important investigations on the deformation behavior and the load limits still have to be performed. The lack of a solid experimental data basis hampers the development of numerical simulation methods as a valuable tool for reliability prognoses. In this work, we employ a novel material characterization procedure focused on the local mechanical properties of the PCB resin matrix to support the material modeling for numerical simulations. The goal of the current work is to assess the capabilities of state of the art FE-assisted methods to describe the local material properties in critical locations of a PCB stack. Numerical modeling is performed on mechanical tensile tests as well as on an idealized PCB module subjected to a standard manufacturing profile. We investigate two strategies for modeling a PCB stack, namely as a homogenized block, and as a discrete layer-by-layer stack of filled resin matrix and glass fiber reinforced resin layers. The local loads in a PCB assembly resulting from the simulation of a manufacturing thermal profile are compared to the loads observed in tensile tests. We discuss the current capabilities and limitations in the applied FE-methodology, and we derive necessary improvements of the material modeling and the geometrical discretization approaches for PCB modules.
{"title":"Numerical estimation of local load during manufacturing process in high temperature PCB resin based on viscoelastic material modeling","authors":"M. Schmidt, Y. Maniar, R. Ratchev, A. Kabakchiev, M. Guyenot, H. Walter, M. Schneider-Ramelow","doi":"10.1109/EUROSIME.2019.8724534","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724534","url":null,"abstract":"In the field of electric and autonomous driving applications, there is currently an increasing demand for high-performance PCB materials, which can meet the requirements of high durability and long-term stability. For example, high temperature PCB base materials with an increased glass transition temperature offer new possibilities and facilitate new fields of usage. However, to the best of our knowledge, their thermomechanical properties on the local scale of glass fiber and resin matrix regions are not widely reported yet. Important investigations on the deformation behavior and the load limits still have to be performed. The lack of a solid experimental data basis hampers the development of numerical simulation methods as a valuable tool for reliability prognoses. In this work, we employ a novel material characterization procedure focused on the local mechanical properties of the PCB resin matrix to support the material modeling for numerical simulations. The goal of the current work is to assess the capabilities of state of the art FE-assisted methods to describe the local material properties in critical locations of a PCB stack. Numerical modeling is performed on mechanical tensile tests as well as on an idealized PCB module subjected to a standard manufacturing profile. We investigate two strategies for modeling a PCB stack, namely as a homogenized block, and as a discrete layer-by-layer stack of filled resin matrix and glass fiber reinforced resin layers. The local loads in a PCB assembly resulting from the simulation of a manufacturing thermal profile are compared to the loads observed in tensile tests. We discuss the current capabilities and limitations in the applied FE-methodology, and we derive necessary improvements of the material modeling and the geometrical discretization approaches for PCB modules.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133342624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724570
Cadmus C A Yuan, Yu-Jun Hong, Chang-Chi Lee, K. Chiang, J. Huang
Artificial intelligence techniques have been widely applied in many domains, such as image /sound/text recognition, manufacturing monitoring, etc. One of the requirements for an artificial intelligence modeling is massive datasets. However, it is often limited knowns in the beginning of the design phase.This paper studied the methods and the influence of building an artificial intelligence model from a limited number of inputs. The application of the artificial neural network (ANN) and the recurrent neural network (RNN) has been applied to the nonlinear mechanical FE, steady-state thermal FE and transient FE model, and a rather simple neural network model and accuracy/application of these models has been reported.
{"title":"Application of Artificial and recurrent neural network on the steady-state and transient finite element modeling","authors":"Cadmus C A Yuan, Yu-Jun Hong, Chang-Chi Lee, K. Chiang, J. Huang","doi":"10.1109/EUROSIME.2019.8724570","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724570","url":null,"abstract":"Artificial intelligence techniques have been widely applied in many domains, such as image /sound/text recognition, manufacturing monitoring, etc. One of the requirements for an artificial intelligence modeling is massive datasets. However, it is often limited knowns in the beginning of the design phase.This paper studied the methods and the influence of building an artificial intelligence model from a limited number of inputs. The application of the artificial neural network (ANN) and the recurrent neural network (RNN) has been applied to the nonlinear mechanical FE, steady-state thermal FE and transient FE model, and a rather simple neural network model and accuracy/application of these models has been reported.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132458891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724562
V. Hein, K. Weide-Zaage, Xi Yang
The reliability of CMOS circuits is influenced by local inhomogeneities in current density, temperature and mechanical stress. Mechanical stress caused by processing and post-processing sources like material mismatch, temperature steps and extrinsic sources like bonding, 3D integration and extended operating conditions becomes more and more relevant the for reliability. It can affect the life time performance of interconnects as well as the function of active devices like stress sensitive transistors.First simulations which support the development work for optimized interconnect layouts as features to improve the reliability of a circuit were prepared. The evaluations started with the heater development of self-heating test structures for higher metal layers for accelerated reliability tests. It continued with the development of a high robust metal stack. The simulations and the tests at heaters and high robust metallization test structures demonstrated the advantages of such a layout improvement.The simulations of the distribution of the temperature and the mechanical stress illustrates the important parameters and their interactions.The paper presents new ANSYS® -simulations on some exemplary heater layout variants in the highly robust metallization design. The scientific questions were the suitability and the benefits of such a heater layout for heating, cooling and stress distribution in CMOS circuits. Different heater-test line models have been analysed by ANSYS® -simulations. The variants of the models were forced or no forced current in heater and/or test line and the kind of metal layer of heater connection. The current density, temperature, their gradients, the hydrostatic stress, the Von Mises stress and the mass flux divergences have been analysed.Such simulations can be utilized to improve parts of circuits like chip corners, sensitive transistors, circuits on GaN-substrate, with TSVs or applications with 3D integration. The local temperature and stress management can be improved by the special metallization layout and the improvement can be supported by simulation data.
{"title":"Layout optimization of CMOS Interconnects for Heating, Cooling and Improved Stress Distribution","authors":"V. Hein, K. Weide-Zaage, Xi Yang","doi":"10.1109/EUROSIME.2019.8724562","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724562","url":null,"abstract":"The reliability of CMOS circuits is influenced by local inhomogeneities in current density, temperature and mechanical stress. Mechanical stress caused by processing and post-processing sources like material mismatch, temperature steps and extrinsic sources like bonding, 3D integration and extended operating conditions becomes more and more relevant the for reliability. It can affect the life time performance of interconnects as well as the function of active devices like stress sensitive transistors.First simulations which support the development work for optimized interconnect layouts as features to improve the reliability of a circuit were prepared. The evaluations started with the heater development of self-heating test structures for higher metal layers for accelerated reliability tests. It continued with the development of a high robust metal stack. The simulations and the tests at heaters and high robust metallization test structures demonstrated the advantages of such a layout improvement.The simulations of the distribution of the temperature and the mechanical stress illustrates the important parameters and their interactions.The paper presents new ANSYS® -simulations on some exemplary heater layout variants in the highly robust metallization design. The scientific questions were the suitability and the benefits of such a heater layout for heating, cooling and stress distribution in CMOS circuits. Different heater-test line models have been analysed by ANSYS® -simulations. The variants of the models were forced or no forced current in heater and/or test line and the kind of metal layer of heater connection. The current density, temperature, their gradients, the hydrostatic stress, the Von Mises stress and the mass flux divergences have been analysed.Such simulations can be utilized to improve parts of circuits like chip corners, sensitive transistors, circuits on GaN-substrate, with TSVs or applications with 3D integration. The local temperature and stress management can be improved by the special metallization layout and the improvement can be supported by simulation data.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128780593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/EUROSIME.2019.8724531
A. G. Morozov, A. Freidin, Wolfgang H. Müller, A. Semencha, M. Tribunskiy
This paper is concerned with the modeling of the formation and growth of InterMetallic Compound (IMC) layers in tin (Sn) based solder bumps on copper (Cu) interconnects within a microelectronic component subjected to a thermo-cycle test. IMC formation is the result of diffusion and chemical reaction processes. There is a change in shape and volume between the products and reactants, and, consequently, in addition to temperature the growth is influenced by the resulting residual stresses and strains. Strictly speaking IMC formation is based on multi-component diffusion in solids, including vacancies as a migrating species leading to Kirkendall voiding, and in addition to mechanical stress it can be enhanced by electric currents. It should also be noted that if the bump is used as an electric connection in a microelectronic component additional mechanical stress will result from the thermal mismatch of the various materials used to fabricate this component. In this paper we will use a formerly developed methodology to study IMC growth in solder bumps that are sheared due to the different thermal expansion coefficients of the adjacent material structures. The change of temperature is chosen such that it mimics the temperature range, ramp and hold times typically encountered in a temperature cycle test. The methodology for computing the growth of the reaction front is based on a kinetic equation. It was derived in former work from an expression for the chemical affinity tensor. It allows to incorporate the influence of stresses and strains on the chemical reaction rate and the normal component of the reaction front velocity in a rational manner. Due to the complexity of the geometry the involved solution procedures must be numerical ones. Consequently, the Finite Element (FE) technique will be applied during the solution.
{"title":"Modeling temperature dependent chemical reaction of intermetallic compound growth","authors":"A. G. Morozov, A. Freidin, Wolfgang H. Müller, A. Semencha, M. Tribunskiy","doi":"10.1109/EUROSIME.2019.8724531","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724531","url":null,"abstract":"This paper is concerned with the modeling of the formation and growth of InterMetallic Compound (IMC) layers in tin (Sn) based solder bumps on copper (Cu) interconnects within a microelectronic component subjected to a thermo-cycle test. IMC formation is the result of diffusion and chemical reaction processes. There is a change in shape and volume between the products and reactants, and, consequently, in addition to temperature the growth is influenced by the resulting residual stresses and strains. Strictly speaking IMC formation is based on multi-component diffusion in solids, including vacancies as a migrating species leading to Kirkendall voiding, and in addition to mechanical stress it can be enhanced by electric currents. It should also be noted that if the bump is used as an electric connection in a microelectronic component additional mechanical stress will result from the thermal mismatch of the various materials used to fabricate this component. In this paper we will use a formerly developed methodology to study IMC growth in solder bumps that are sheared due to the different thermal expansion coefficients of the adjacent material structures. The change of temperature is chosen such that it mimics the temperature range, ramp and hold times typically encountered in a temperature cycle test. The methodology for computing the growth of the reaction front is based on a kinetic equation. It was derived in former work from an expression for the chemical affinity tensor. It allows to incorporate the influence of stresses and strains on the chemical reaction rate and the normal component of the reaction front velocity in a rational manner. Due to the complexity of the geometry the involved solution procedures must be numerical ones. Consequently, the Finite Element (FE) technique will be applied during the solution.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"378 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125331037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/eurosime.2019.8724519
Kourosh M. Kalayeh, Natalie Hernandez, C. Hillman, N. Blattau
The electronic industry recently experienced a sudden increase in microvia failures in printed circuit boards during the reflow process. The failures occurred specifically on triple-stack microvias placed over a buried via. The failure mechanisms included separation of the microvia from the capture pad and ductile tearing of the copper flanges. The sudden onset of these failures was due to the electronics industry’s over-reliance on design rules to avoid PCB issues. The flaw in design rules is their reliance on lessons learned from previous designs and the assumption that new designs are sufficiently similar to older designs. This pervasive failure mode across multiple industries and designs is evidence that a new, more robust technique based on reliability physics is required for future, high density electronic hardware designs. We propose a technique that takes advantage of finite element modeling and industry research to predict the reliability and manufacturability of microvias.
{"title":"Automated Method Using Finite Element Simulation to Identify Microvia Stacks at Risk of Separation in Complex PCB Designs","authors":"Kourosh M. Kalayeh, Natalie Hernandez, C. Hillman, N. Blattau","doi":"10.1109/eurosime.2019.8724519","DOIUrl":"https://doi.org/10.1109/eurosime.2019.8724519","url":null,"abstract":"The electronic industry recently experienced a sudden increase in microvia failures in printed circuit boards during the reflow process. The failures occurred specifically on triple-stack microvias placed over a buried via. The failure mechanisms included separation of the microvia from the capture pad and ductile tearing of the copper flanges. The sudden onset of these failures was due to the electronics industry’s over-reliance on design rules to avoid PCB issues. The flaw in design rules is their reliance on lessons learned from previous designs and the assumption that new designs are sufficiently similar to older designs. This pervasive failure mode across multiple industries and designs is evidence that a new, more robust technique based on reliability physics is required for future, high density electronic hardware designs. We propose a technique that takes advantage of finite element modeling and industry research to predict the reliability and manufacturability of microvias.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115190453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/EUROSIME.2019.8724528
W. Westerveld, S. M. Leinders, P. van Neer, H. Urbach, N. Jong, M. Verweij, X. Rottenberg, V. Rochus
Future applications of ultrasonography in (bio-)medical imaging require ultrasound sensor matrices with small sensitive elements. Promising are opto-mechanical ultrasound sensors (OMUS) based on a silicon photonic ring resonator embedded in a silicon-dioxide acoustical membrane. This work presents new OMUS modelling: acousto-mechanical non-linear FEM and photonic circuit equations. We show that initial wafer stress needs to be considered in the design: the acoustical resonance frequency changes considerably and OMUS sensitivity differs for up-or downwards buckled membranes. Simulated acoustical resonance frequency agrees well with measurements, assuming realistic SOI wafer stress. Measured sensitivity showed large device-to-device variation and simulations agree within this order of magnitude. We conclude that careful modeling of stress is necessary (b) for the design of robust and sensitive sensors.
{"title":"Optical micro-machined ultrasound sensors with a silicon photonic resonator in a buckled acoustical membrane","authors":"W. Westerveld, S. M. Leinders, P. van Neer, H. Urbach, N. Jong, M. Verweij, X. Rottenberg, V. Rochus","doi":"10.1109/EUROSIME.2019.8724528","DOIUrl":"https://doi.org/10.1109/EUROSIME.2019.8724528","url":null,"abstract":"Future applications of ultrasonography in (bio-)medical imaging require ultrasound sensor matrices with small sensitive elements. Promising are opto-mechanical ultrasound sensors (OMUS) based on a silicon photonic ring resonator embedded in a silicon-dioxide acoustical membrane. This work presents new OMUS modelling: acousto-mechanical non-linear FEM and photonic circuit equations. We show that initial wafer stress needs to be considered in the design: the acoustical resonance frequency changes considerably and OMUS sensitivity differs for up-or downwards buckled membranes. Simulated acoustical resonance frequency agrees well with measurements, assuming realistic SOI wafer stress. Measured sensitivity showed large device-to-device variation and simulations agree within this order of magnitude. We conclude that careful modeling of stress is necessary (b) for the design of robust and sensitive sensors.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129032699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：