Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009640
Kunihisa Kato, T. Muto, T. Kondo, K. Miyazaki
We investigated effects of the submicron structured thermoelectric thin films and module on their performance. The output power of the submicron structured module was 1.5 times greater than that of a smooth structured module.
{"title":"Fabrication of flexible thermoelectric thin film module using micro porous structure","authors":"Kunihisa Kato, T. Muto, T. Kondo, K. Miyazaki","doi":"10.1109/ICSJ.2014.7009640","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009640","url":null,"abstract":"We investigated effects of the submicron structured thermoelectric thin films and module on their performance. The output power of the submicron structured module was 1.5 times greater than that of a smooth structured module.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125798597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009633
B. T. Tung, Xiaojin Cheng, N. Watanabe, F. Kato, K. Kikuchi, M. Aoyagi
In this study, Parylene-HT, the newest commercially available parylene with the lowest dielectric constant and highest temperature tolerance within all the series, was investigated as insulation/liner in the application of through-silicon-via (TSV). Bottom-up copper filled TSV with 1 μm Parylene-HT insulator was realized on a 100 μm-thick Si wafer through via etching, parylene vapor deposition, and electroplating processes. The fabrication process on the 36 μm diameter TSVs, are reported here, as well as their electrical properties, including DC leakage and capacitance.
{"title":"Fabrication and electrical characterization of Parylene-HT liner bottom-up copper filled through silicon via (TSV)","authors":"B. T. Tung, Xiaojin Cheng, N. Watanabe, F. Kato, K. Kikuchi, M. Aoyagi","doi":"10.1109/ICSJ.2014.7009633","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009633","url":null,"abstract":"In this study, Parylene-HT, the newest commercially available parylene with the lowest dielectric constant and highest temperature tolerance within all the series, was investigated as insulation/liner in the application of through-silicon-via (TSV). Bottom-up copper filled TSV with 1 μm Parylene-HT insulator was realized on a 100 μm-thick Si wafer through via etching, parylene vapor deposition, and electroplating processes. The fabrication process on the 36 μm diameter TSVs, are reported here, as well as their electrical properties, including DC leakage and capacitance.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125114577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009612
K. Murayama, Mitsuhiro Aizawa, T. Kurihara
Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).
{"title":"Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections","authors":"K. Murayama, Mitsuhiro Aizawa, T. Kurihara","doi":"10.1109/ICSJ.2014.7009612","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009612","url":null,"abstract":"Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125977228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009636
O. Sugihara
An optical module for demultiplexing optical communication wavelengths is realized by incorporating a multilayer filter into a light-induced self-written (LISW) optical waveguide. For the purpose, a 24-layer-filter comprising low and high refractive index hybrid material layers is designed and fabricated by mutual spin-coating and UV-curing. The LISW waveguide by exposure to 850-nm light using bi-directional process to a photocurable resin is realized, and insertion loss difference reaches to 17.8 dB between 1.31 μm and 1.55 μm.
{"title":"Organic-inorganic hybrid materials for wavelength division multiplexing filter in self-written waveguide module","authors":"O. Sugihara","doi":"10.1109/ICSJ.2014.7009636","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009636","url":null,"abstract":"An optical module for demultiplexing optical communication wavelengths is realized by incorporating a multilayer filter into a light-induced self-written (LISW) optical waveguide. For the purpose, a 24-layer-filter comprising low and high refractive index hybrid material layers is designed and fabricated by mutual spin-coating and UV-curing. The LISW waveguide by exposure to 850-nm light using bi-directional process to a photocurable resin is realized, and insertion loss difference reaches to 17.8 dB between 1.31 μm and 1.55 μm.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128851903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009600
N. Chujo, Y. Uematsu, M. Yasunaga
We describe a chip-to-chip interconnect solution that will enable 40-Tb/s bandwidth per apparatus and 10-Tb/s bandwidth per LSI in 2020. By using an interposer which can increase wiring density, we aim to increase the parallel number of data, relax the data rate, and integrate optical transceivers in the package. Doing so both enhances bandwidth and reduces power consumption. By analyzing the optical interconnect composed of a Si interposer, VCSEL, and PD, we determine that about 10Gb/s is the most power efficient data rate.
{"title":"Power efficient data rate for photonic interposer","authors":"N. Chujo, Y. Uematsu, M. Yasunaga","doi":"10.1109/ICSJ.2014.7009600","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009600","url":null,"abstract":"We describe a chip-to-chip interconnect solution that will enable 40-Tb/s bandwidth per apparatus and 10-Tb/s bandwidth per LSI in 2020. By using an interposer which can increase wiring density, we aim to increase the parallel number of data, relax the data rate, and integrate optical transceivers in the package. Doing so both enhances bandwidth and reduces power consumption. By analyzing the optical interconnect composed of a Si interposer, VCSEL, and PD, we determine that about 10Gb/s is the most power efficient data rate.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124336452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009594
T. Araki
Femtosecond laser induced second harmonic generation (SHG) microscopy provides non-invasive and non-staining observation of collagen structure. In this article, application of SHG microscopy for skin diagnosis and for engineered cell culture are demonstrated.
{"title":"Visualization of tissue collagen with femtosecond laser: application to skin diagnosis and cell culture","authors":"T. Araki","doi":"10.1109/ICSJ.2014.7009594","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009594","url":null,"abstract":"Femtosecond laser induced second harmonic generation (SHG) microscopy provides non-invasive and non-staining observation of collagen structure. In this article, application of SHG microscopy for skin diagnosis and for engineered cell culture are demonstrated.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"225 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121154434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009629
T. Sakai, Brett M. D. Sawyer, Hao Lu, Y. Takagi, R. Furuya, Yuya Suzuki, M. Kobayashi, V. Smet, V. Sundaram, R. Tummala
In this paper, a large 2.5D glass interposer is demonstrated with 50 um chip-level interconnect (FLI), 3/3 um line and space (L/S) escape routing, and six metal layers, which are targeted for JEDEC high bandwidth memory (HBM). Our routing design suggests that double sided panel processing with 3/3 um L/S can accommodate required signal lines for HBM. Then, 3/3 um L/S transmission lines on 25mm × 30mm glass interposers with 300 um core thickness can be realized by utilizing semi additive process. Finally, 10mm × 10m dies with daisy chains can be successfully bonded to 25mm × 30mm glass interposer with 6 metal lines using copper microbumps with SnAg solder caps.
{"title":"Design and demonstration of large 2.5D glass interposer for high bandwidth applications","authors":"T. Sakai, Brett M. D. Sawyer, Hao Lu, Y. Takagi, R. Furuya, Yuya Suzuki, M. Kobayashi, V. Smet, V. Sundaram, R. Tummala","doi":"10.1109/ICSJ.2014.7009629","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009629","url":null,"abstract":"In this paper, a large 2.5D glass interposer is demonstrated with 50 um chip-level interconnect (FLI), 3/3 um line and space (L/S) escape routing, and six metal layers, which are targeted for JEDEC high bandwidth memory (HBM). Our routing design suggests that double sided panel processing with 3/3 um L/S can accommodate required signal lines for HBM. Then, 3/3 um L/S transmission lines on 25mm × 30mm glass interposers with 300 um core thickness can be realized by utilizing semi additive process. Finally, 10mm × 10m dies with daisy chains can be successfully bonded to 25mm × 30mm glass interposer with 6 metal lines using copper microbumps with SnAg solder caps.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126796228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009628
T. Yagisawa, M. Sugawara, T. Shiraishi, Kazuhiro Tanaka
We propose a high-speed FPC connector, an inductive peaking line on a module substrate, and an integrated lens using inkjet technology for a small-diameter photodiode to extend the frequency bandwidth on electrical and optical packaging. These techniques enable high-speed operation over 25 Gb/s. We fabricated a 4-channel flexible printed circuit-based optical engine by adopting these technologies and demonstrated a clear eye opening and error-free operation up to 41.25 Gb/s.
{"title":"Novel packaging technologies for FPC-based optical transceiver for high-speed optical interconnect","authors":"T. Yagisawa, M. Sugawara, T. Shiraishi, Kazuhiro Tanaka","doi":"10.1109/ICSJ.2014.7009628","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009628","url":null,"abstract":"We propose a high-speed FPC connector, an inductive peaking line on a module substrate, and an integrated lens using inkjet technology for a small-diameter photodiode to extend the frequency bandwidth on electrical and optical packaging. These techniques enable high-speed operation over 25 Gb/s. We fabricated a 4-channel flexible printed circuit-based optical engine by adopting these technologies and demonstrated a clear eye opening and error-free operation up to 41.25 Gb/s.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126225629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009625
M. Yoshizawa, Seisei Oyamada, A. Hattori, T. Nakura, K. Asada
In this paper, we demonstrate our STO thin film decoupling capacitor embedded in organic interposer is effective for reduction of resonant power supply noise of LSI. By comparison of Shmoo plots with on-chip MOS capacitor, significant contributions of STO capacitor to higher operable frequency and lower power supply voltage are shown.
{"title":"Improvement of power integrity with thin film capacitors embedded in organic interposer","authors":"M. Yoshizawa, Seisei Oyamada, A. Hattori, T. Nakura, K. Asada","doi":"10.1109/ICSJ.2014.7009625","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009625","url":null,"abstract":"In this paper, we demonstrate our STO thin film decoupling capacitor embedded in organic interposer is effective for reduction of resonant power supply noise of LSI. By comparison of Shmoo plots with on-chip MOS capacitor, significant contributions of STO capacitor to higher operable frequency and lower power supply voltage are shown.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123124331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-01DOI: 10.1109/ICSJ.2014.7009642
M. Inoue, Yoshiaki Sakaniwa, Yasunori Tada
Electrical conductivity evolution of ECAs composed of epoxy-based binders during curing was analyzed using an in-situ viscoelastic characterization (free-damped oscillation method). Variation in electrical conductivity of ECAs was monitored concurrently with the viscoelastic characterization. This work clarified that increase in electrical conductivity of ECAs during curing does not always relate to curing reaction of the binder molecules. Interface chemistry is one of the important factors in determining inter-filler electrical conductance as well as the gap width. Inter-filler chemistry should be taken into account for developing novel ECAs and for optimizing assembly process condition.
{"title":"In-situ analysis of electrical conductivity evolution in epoxy-based conductive adhesives with Ag loading during curing process","authors":"M. Inoue, Yoshiaki Sakaniwa, Yasunori Tada","doi":"10.1109/ICSJ.2014.7009642","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009642","url":null,"abstract":"Electrical conductivity evolution of ECAs composed of epoxy-based binders during curing was analyzed using an in-situ viscoelastic characterization (free-damped oscillation method). Variation in electrical conductivity of ECAs was monitored concurrently with the viscoelastic characterization. This work clarified that increase in electrical conductivity of ECAs during curing does not always relate to curing reaction of the binder molecules. Interface chemistry is one of the important factors in determining inter-filler electrical conductance as well as the gap width. Inter-filler chemistry should be taken into account for developing novel ECAs and for optimizing assembly process condition.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129373733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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