Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956385
L. Fanucci, R. Roncella, R. Saletti
A sine evaluation architecture based on a quadratic interpolation is considered for the realization of direct digital frequency synthesizers (DDFS). In the proposed architecture the sine values are approximated with the output of a second order interpolator, whose coefficients are stored in a tiny look-up table (LUT). The memory and computation resources needed by this approach are compared with a solution where a first order interpolation is used, recently presented as the best LUT-based system for DDFS implementation. The comparison demonstrates that parabolic interpolation of the sine function asymptotically outperforms lower order approximations and that it could be considered as a better approach for frequency synthesizers with output resolution of practical interest. As a case example, a DDFS with a phase resolution of 20 b and an output resolution of 9 b has been designed. It is characterized by a maximum absolute error of 0.798 LSB, an output signal to noise ratio (SNR) of 55.60 dB and a spectral purity better than 74 dBc. The dimension of the LUT is only 104 b, and the parabolic interpolator has an estimated complexity equivalent to 175 full-adders. The structure of the evaluator is simple, easily pipelinable, and well suited to an integrated implementation.
{"title":"A sine wave digital synthesizer based on a quadratic approximation","authors":"L. Fanucci, R. Roncella, R. Saletti","doi":"10.1109/FREQ.2001.956385","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956385","url":null,"abstract":"A sine evaluation architecture based on a quadratic interpolation is considered for the realization of direct digital frequency synthesizers (DDFS). In the proposed architecture the sine values are approximated with the output of a second order interpolator, whose coefficients are stored in a tiny look-up table (LUT). The memory and computation resources needed by this approach are compared with a solution where a first order interpolation is used, recently presented as the best LUT-based system for DDFS implementation. The comparison demonstrates that parabolic interpolation of the sine function asymptotically outperforms lower order approximations and that it could be considered as a better approach for frequency synthesizers with output resolution of practical interest. As a case example, a DDFS with a phase resolution of 20 b and an output resolution of 9 b has been designed. It is characterized by a maximum absolute error of 0.798 LSB, an output signal to noise ratio (SNR) of 55.60 dB and a spectral purity better than 74 dBc. The dimension of the LUT is only 104 b, and the parabolic interpolator has an estimated complexity equivalent to 175 full-adders. The structure of the evaluator is simple, easily pipelinable, and well suited to an integrated implementation.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127379211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956360
T. Omori, J. Akasaka, M. Arai, Kunihiko Hashimoto, M. Yamaguchi
This paper discusses a method of designing weighted SAW grating reflectors which enables one to develop the filters having a small group delay deviation, a flat passband and steep responses in transition bands. Both electrode width and withdrawal-weightings were adopted to realise weighted reflectors. An SAW delay line employing the optimally designed reflector was fabricated, and the reflector performance was discussed. The group delay deviation of less than 80 ns in the stopband was achieved at the centre frequency of 200 MHz. For practical applications, an SAW IF filter employing the reflectors was fabricated. The reflector response is vividly reflected on filter performance, achieving the group delay deviation of less than 80 ns in the passband.
{"title":"Optimisation of weighted SAW grating reflectors with minimised time delay deviation","authors":"T. Omori, J. Akasaka, M. Arai, Kunihiko Hashimoto, M. Yamaguchi","doi":"10.1109/FREQ.2001.956360","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956360","url":null,"abstract":"This paper discusses a method of designing weighted SAW grating reflectors which enables one to develop the filters having a small group delay deviation, a flat passband and steep responses in transition bands. Both electrode width and withdrawal-weightings were adopted to realise weighted reflectors. An SAW delay line employing the optimally designed reflector was fabricated, and the reflector performance was discussed. The group delay deviation of less than 80 ns in the stopband was achieved at the centre frequency of 200 MHz. For practical applications, an SAW IF filter employing the reflectors was fabricated. The reflector response is vividly reflected on filter performance, achieving the group delay deviation of less than 80 ns in the passband.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127323206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956382
Y. Watanabe, K. Ozaki, S. Goka, T. Sato, H. Sekimoto
A high-stability oven-controlled crystal oscillator (OCXO) (frequency stability; +/- 10 ppb from -30 to 70/spl deg/C) has been developed using a dual-mode SC-cut quartz crystal oscillator. The oscillator's frequency stability includes a frequency-temperature hysteresis over the range of operational temperatures, and repeatability of frequencies after power is switched off then back on. In this OCXO a conventional oven-control system is used for coarse compensation and a digital correction system is used for fine compensation. The combination of these forms of compensation greatly improves the C-mode frequency stability and expands the operational temperature range with a very small additional requirement for electric power. Experimental results indicate that the frequency-temperature stability of the OCXO was 20 times better, and its operational temperature range 30 degrees wider, than the conventional OCXOs. We also measured the phase noise characteristics of this OCXO. The experimental results indicate that very low phase-noise (-157 dBc/Hz @ 10 kHz) can be obtained at the floor region. This noise level corresponds well with a calculation based on our dual-mode oscillator noise estimation.
{"title":"Frequency stability and phase noise characteristics of digital OCXOs using dual-mode excitation","authors":"Y. Watanabe, K. Ozaki, S. Goka, T. Sato, H. Sekimoto","doi":"10.1109/FREQ.2001.956382","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956382","url":null,"abstract":"A high-stability oven-controlled crystal oscillator (OCXO) (frequency stability; +/- 10 ppb from -30 to 70/spl deg/C) has been developed using a dual-mode SC-cut quartz crystal oscillator. The oscillator's frequency stability includes a frequency-temperature hysteresis over the range of operational temperatures, and repeatability of frequencies after power is switched off then back on. In this OCXO a conventional oven-control system is used for coarse compensation and a digital correction system is used for fine compensation. The combination of these forms of compensation greatly improves the C-mode frequency stability and expands the operational temperature range with a very small additional requirement for electric power. Experimental results indicate that the frequency-temperature stability of the OCXO was 20 times better, and its operational temperature range 30 degrees wider, than the conventional OCXOs. We also measured the phase noise characteristics of this OCXO. The experimental results indicate that very low phase-noise (-157 dBc/Hz @ 10 kHz) can be obtained at the floor region. This noise level corresponds well with a calculation based on our dual-mode oscillator noise estimation.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121934887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956253
Y. Nagaura, Z. Nagaura, K. Nagaura, K. Nagato, K. Emoto, K. Imani, K. Kinoshita, S. Yokomizo, M. Nakazawa
Novel quartz resonators of single-sided grooved type and double-sided grooved type in two steps shape are successfully manufactured by chemical etching processes.
采用化学蚀刻工艺，成功地制造出了两阶梯形状的单面沟槽型和双面沟槽型石英谐振器。
{"title":"Single-sided grooved type or double-sided grooved type resonators manufactured by chemical etching process of two or above steps","authors":"Y. Nagaura, Z. Nagaura, K. Nagaura, K. Nagato, K. Emoto, K. Imani, K. Kinoshita, S. Yokomizo, M. Nakazawa","doi":"10.1109/FREQ.2001.956253","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956253","url":null,"abstract":"Novel quartz resonators of single-sided grooved type and double-sided grooved type in two steps shape are successfully manufactured by chemical etching processes.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122454529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956210
J. Nosek
The paper deals with the critical evaluation of the methods used in our previous papers concerning the determination of the high-order material constants in the quartz. We have determined the effective elastic constants of 4th order using a measurement of the intermodulation products, and measurement of drive level dependence of resonant frequency of quartz resonators. The computer based-method of solution of the set of equations gives an access to obtain the effective non-linear stiffnesses of 4th order. The measurements and computer solutions are performed on different Y-cuts resonators, both for quartz and gallium phosphate resonators, vibrating in fundamental thickness shear mode. The experimental results are discussed.
{"title":"A critical evaluation of the determination of high-order elastic stiffnesses of quartz","authors":"J. Nosek","doi":"10.1109/FREQ.2001.956210","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956210","url":null,"abstract":"The paper deals with the critical evaluation of the methods used in our previous papers concerning the determination of the high-order material constants in the quartz. We have determined the effective elastic constants of 4th order using a measurement of the intermodulation products, and measurement of drive level dependence of resonant frequency of quartz resonators. The computer based-method of solution of the set of equations gives an access to obtain the effective non-linear stiffnesses of 4th order. The measurements and computer solutions are performed on different Y-cuts resonators, both for quartz and gallium phosphate resonators, vibrating in fundamental thickness shear mode. The experimental results are discussed.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130571024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956204
J. Nosek, J. Zelenka
In the last decade much attention is given to piezoelectric crystals with a large value of the electromechanical coupling coefficient. Namely, quartz homeotype crystals such as berlinite, langasite and also gallium ortophosphate (GaPO/sub 4/) are the representatives of this group of crystals. Approximately two times greater coupling coefficient k/sub 26/ connected with the resonators vibrating in the thickness-shear mode allows extend the distance between the series and parallel resonance frequency of the resonators suitable for the frequency range from 1 to 100 MHz. This is important for some types of crystal oscillator and monolithic filter. The large electromechanical coupling coefficient increases also the difference of the resonant frequency temperature dependence of the fundamental and harmonic resonance frequencies of the resonators vibrating in the thickness-shear mode. The results of the measured resonance frequency temperature characteristics of fundamental and third harmonic of Y-cuts of GaPO/sub 4/ resonators vibrating in thickness-shear mode are presented. The computed electromechanical coupling coefficient k/sub 26/ are compared with the measured ones. Attention is further given to the measurement of some nonlinear properties of the rotated Y-cuts GaPO/sub 4/ resonators vibrating in essentially thickness-shear mode. The knowledge of the nonlinear interactions is important for the analysis of intermodulation phenomena resonators. This phenomena is important for the application of GaPO/sub 4/ resonators in crystal oscillators, filters and other electronic devices.
{"title":"Contribution to the electromechanical and nonlinear properties of GaPO/sub 4/ crystals","authors":"J. Nosek, J. Zelenka","doi":"10.1109/FREQ.2001.956204","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956204","url":null,"abstract":"In the last decade much attention is given to piezoelectric crystals with a large value of the electromechanical coupling coefficient. Namely, quartz homeotype crystals such as berlinite, langasite and also gallium ortophosphate (GaPO/sub 4/) are the representatives of this group of crystals. Approximately two times greater coupling coefficient k/sub 26/ connected with the resonators vibrating in the thickness-shear mode allows extend the distance between the series and parallel resonance frequency of the resonators suitable for the frequency range from 1 to 100 MHz. This is important for some types of crystal oscillator and monolithic filter. The large electromechanical coupling coefficient increases also the difference of the resonant frequency temperature dependence of the fundamental and harmonic resonance frequencies of the resonators vibrating in the thickness-shear mode. The results of the measured resonance frequency temperature characteristics of fundamental and third harmonic of Y-cuts of GaPO/sub 4/ resonators vibrating in thickness-shear mode are presented. The computed electromechanical coupling coefficient k/sub 26/ are compared with the measured ones. Attention is further given to the measurement of some nonlinear properties of the rotated Y-cuts GaPO/sub 4/ resonators vibrating in essentially thickness-shear mode. The knowledge of the nonlinear interactions is important for the analysis of intermodulation phenomena resonators. This phenomena is important for the application of GaPO/sub 4/ resonators in crystal oscillators, filters and other electronic devices.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129688039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956388
R. Kozhuharov, H. Zirath
A voltage controlled oscillator (VCO) is one of the key components in millimeter wave systems for FM or FSK modulation, frequency tuning and phase locked sources, etc. MMIC VCOs with integrated varactor for frequency control or modulation is useful for such functions. The main problem is to integrate the varactor with a standard technological process. One possibility is the use of a cold HEMT as a diode. Drain and source are connected and the non-linearity Cgs is only depending upon the voltage Vgs (=Vds). Capacitance ratio and quality factor can then be optimized in relation to the gate length. A short gate length provides a low capacitance ratio, but high quality factor. The purpose of this work is to develop a monolithic VCO with improved frequency variation linearity and with simplified fabrication process, by applying high f/sub max/ 0.1 /spl mu/m gate HEMT both as an active element and as a varactor.
{"title":"A millimeter wave monolithic VCO with an integrated HEMT as a varactor","authors":"R. Kozhuharov, H. Zirath","doi":"10.1109/FREQ.2001.956388","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956388","url":null,"abstract":"A voltage controlled oscillator (VCO) is one of the key components in millimeter wave systems for FM or FSK modulation, frequency tuning and phase locked sources, etc. MMIC VCOs with integrated varactor for frequency control or modulation is useful for such functions. The main problem is to integrate the varactor with a standard technological process. One possibility is the use of a cold HEMT as a diode. Drain and source are connected and the non-linearity Cgs is only depending upon the voltage Vgs (=Vds). Capacitance ratio and quality factor can then be optimized in relation to the gate length. A short gate length provides a low capacitance ratio, but high quality factor. The purpose of this work is to develop a monolithic VCO with improved frequency variation linearity and with simplified fabrication process, by applying high f/sub max/ 0.1 /spl mu/m gate HEMT both as an active element and as a varactor.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130310443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956184
T. I. Boldyreva
Investigation of 1/f PM and AM noise in bipolar junction transistor (BJT) amplifiers has shown that there are some opportunities to reduce 1/f PM noise in amplifiers using complex emitter feedback. But there was no systematic investigation of opportunities and limitations of this method of 1/f PM noise reduction. The aim of this paper is to present results of such an investigation. To solve the problem, a more general model of 1/f noise generation in BJT was used. Fluctuations both in recombination conductivity and base charging capacitance are taken into consideration. Two cases of compensation are considered. In the case of "wideband" compensation there is a wide frequency band where the reduction doesn't depend on the signal frequency /spl omega//sub s/. In the case of "narrowband" compensation there is a deep notch in dependence of 1/f PM noise power spectral density at each fixed Fourier frequency on /spl omega//sub s/. Limitations on the highest possible /spl omega//sub s/ at which compensation effect can be obtained are considered.
{"title":"Reduction of 1/f PM noise in BJT amplifiers with emitter feedback using compensation effects","authors":"T. I. Boldyreva","doi":"10.1109/FREQ.2001.956184","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956184","url":null,"abstract":"Investigation of 1/f PM and AM noise in bipolar junction transistor (BJT) amplifiers has shown that there are some opportunities to reduce 1/f PM noise in amplifiers using complex emitter feedback. But there was no systematic investigation of opportunities and limitations of this method of 1/f PM noise reduction. The aim of this paper is to present results of such an investigation. To solve the problem, a more general model of 1/f noise generation in BJT was used. Fluctuations both in recombination conductivity and base charging capacitance are taken into consideration. Two cases of compensation are considered. In the case of \"wideband\" compensation there is a wide frequency band where the reduction doesn't depend on the signal frequency /spl omega//sub s/. In the case of \"narrowband\" compensation there is a deep notch in dependence of 1/f PM noise power spectral density at each fixed Fourier frequency on /spl omega//sub s/. Limitations on the highest possible /spl omega//sub s/ at which compensation effect can be obtained are considered.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133612858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956377
V. Candelier, P. Canzian, J. Lamboley, G. Marotel, P. Poulain
For precise applications such as accurate orbitography, fine positioning navigation or localization, time keeping systems, ultra stable oscillator performance has to be constantly improved, for both on-board equipment and ground base stations. This paper summarizes the most important improvements obtained by C-MAC, as a result of all optimization actions conducted over the last year: comparison between previous configuration of the USO and the optimized one (design, process, structure, material and components selection, etc...); presentation of the main performance relating to frequency stability. This gives an overview of what could be considered as the state of the art in ultra-stable oscillators, based on industrial processes.
{"title":"State of the art in ultra stable oscillators for accurate/precise on board and ground applications","authors":"V. Candelier, P. Canzian, J. Lamboley, G. Marotel, P. Poulain","doi":"10.1109/FREQ.2001.956377","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956377","url":null,"abstract":"For precise applications such as accurate orbitography, fine positioning navigation or localization, time keeping systems, ultra stable oscillator performance has to be constantly improved, for both on-board equipment and ground base stations. This paper summarizes the most important improvements obtained by C-MAC, as a result of all optimization actions conducted over the last year: comparison between previous configuration of the USO and the optimized one (design, process, structure, material and components selection, etc...); presentation of the main performance relating to frequency stability. This gives an overview of what could be considered as the state of the art in ultra-stable oscillators, based on industrial processes.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114728279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956364
Paul B. Kirby, Q. Su, E. Komuro, Qi Zhang, Masaaki Imura, R. Whatmore
Thin Film Bulk Acoustic Wave Resonators (FBAR) using Lead Zirconate Titanate (PZT) thin films as the piezoelectric active layer are favourable for voltage controlled oscillators and wide band filters due to the large electro-mechanical coupling coefficient of PZT. This paper reports the fabrication process and results of PZT FBARs and filters. The temperature coefficient and bias voltage effect are also presented.
{"title":"PZT thin film bulk acoustic wave resonators and filters","authors":"Paul B. Kirby, Q. Su, E. Komuro, Qi Zhang, Masaaki Imura, R. Whatmore","doi":"10.1109/FREQ.2001.956364","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956364","url":null,"abstract":"Thin Film Bulk Acoustic Wave Resonators (FBAR) using Lead Zirconate Titanate (PZT) thin films as the piezoelectric active layer are favourable for voltage controlled oscillators and wide band filters due to the large electro-mechanical coupling coefficient of PZT. This paper reports the fabrication process and results of PZT FBARs and filters. The temperature coefficient and bias voltage effect are also presented.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"61 24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131970379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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