Micro and Nano Engineering最新文献_第2页

Fully integrated automatic microfluidic setup for immobilization, analysis and non-selective release of particles 完全集成的自动微流控装置固定化，分析和非选择性释放颗粒

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-12-01 DOI: 10.1016/j.mne.2025.100332

Alexandre Chargueraud , Lars Kool , Jacques Fattaccioli

We present a microfluidic device that enables trapping, analysis and on-demand release of individual microparticles using membrane deformation induced by pneumatic actuation. Inspired by the Pachinko-like architecture, the system integrates an array of traps supported by a deformable membrane. The latter is actuated by pressure control in a pneumatic chamber bonded above it. Unlike conventional designs with rigid guiding structures, our modified configuration maximizes trapping membrane mobility by introducing a wide, elliptical cavity and suspended rectilinear flow guides.

To characterize the device, we performed deformation measurements under controlled negative pressure using confocal microscopy. These measurements revealed pressure-dependent displacement profiles, which were compared to several theoretical models. A strong agreement was observed with the thick-membrane approximation, confirming its suitability for future scaling. Deformation in the z-direction reached over 120 μm under −100 mbar in the pneumatic chamber, enabling the release of 80-μm-diameter particles.

Trapping and release sequences were demonstrated under a microscope by applying controlled fluidic and pneumatic pressures. The device reproducibly captured and released microparticles within seconds. To highlight the automation potential, we integrated a custom Python-based interface using μManager libraries to control imaging, motion, and fluidic systems (accessible in this paper to be used by the readers). The platform autonomously performed full cycles of particle trapping, image acquisition, and release, including priming steps to prevent air bubble formation in the PDMS microchannels.

This work demonstrates a robust and fully automated microfluidic platform capable of reversible particle immobilization. The system is suitable for applications requiring high-throughput single-object analysis, such as screening assays, mechanobiology, or dynamic imaging workflows.

我们提出了一种微流体装置，可以利用气动驱动引起的膜变形来捕获、分析和按需释放单个微颗粒。受弹珠哥式建筑的启发，该系统集成了一系列由可变形膜支撑的陷阱。后者是通过连接在其上方的气动腔中的压力控制来驱动的。与传统的刚性导向结构设计不同，我们改进的配置通过引入一个宽的椭圆腔和悬浮的直线导流器，最大限度地提高了捕集膜的流动性。为了表征该装置，我们使用共聚焦显微镜在受控负压下进行变形测量。这些测量结果揭示了与压力相关的位移曲线，并将其与几个理论模型进行了比较。观察到与厚膜近似的强烈一致性，证实了其对未来缩放的适用性。在−100 mbar的压力下，气室的z向变形达到了120 μm以上，释放了直径为80 μm的颗粒。在显微镜下通过控制流体和气动压力演示捕获和释放序列。该装置可在几秒钟内捕获并释放微粒。为了突出自动化潜力，我们使用μManager库集成了一个基于python的自定义接口来控制成像，运动和流体系统（在本文中可供读者使用）。该平台自动完成了粒子捕获、图像采集和释放的完整周期，包括防止PDMS微通道中气泡形成的启动步骤。这项工作展示了一个强大的、全自动的微流控平台，能够可逆地固定颗粒。该系统适用于需要高通量单对象分析的应用，如筛选分析、机械生物学或动态成像工作流程。

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引用次数: 0

Integrated UV/IR-cut optical filter with nanoimprinted pyramid diffuser featuring tailored light diffusion and hydrophobicity 集成紫外/红外切割滤光片，纳米压印金字塔扩散器，具有定制的光扩散和疏水性

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-12-01 DOI: 10.1016/j.mne.2025.100340

Chih-Han Wu , Chao-Te Lee , Chi-Sheng Chung , Shao-Jen Yeh , Tzu-Yu Chiu , Chun-Hung Lin

This study presents the design, fabrication, and characterization of a UV/IR cut optical filter integrated with a surface diffuser featuring nanoimprinted pyramid structures, aimed at achieving uniform light distribution and minimizing angular sensitivity in optical systems. The key innovation lies in the nanoimprinted pyramid diffuser, which addresses the critical limitation of angular sensitivity inherent in interference-based multilayer filters. The nanoimprinted diffuser introduces deterministic scattering properties that ensure uniform light distribution, reduce angular sensitivity, and provide stable optical performance. The multilayer filter, composed of alternating SiO₂ and TiO₂ layers, was deposited using magnetron sputtering with carefully optimized parameters to achieve high transmittance in the visible range (400–700 nm) while effectively blocking ultraviolet (200–400 nm) and near-infrared (700–1100 nm) wavelengths. The final structure consisted of 29 layers, and the measured optical performance closely matched theoretical simulations. To enhance uniform light distribution and reduce the inherent angle dependence of interference-based filters, a surface diffuser was fabricated using nanoimprint lithography, replicating randomly arranged pyramid structures etched into silicon via anisotropic KOH wet etching. By varying etch times, diffuser structures with different scattering profiles were obtained, with the 6-min etched sample exhibiting the highest haze value (92.38 %) and the strongest diffusion capability. Additionally, surface modification with F₁₃-TCS rendered the diffusers hydrophobic, with contact angles reaching a maximum of 124°, enhancing durability and self-cleaning capability. This refined approach offers a robust solution for improving optical system performance across various applications.

本研究介绍了一种紫外/红外切割滤光片的设计、制造和表征，该滤光片集成了具有纳米压印金字塔结构的表面漫射器，旨在实现光学系统中的均匀光分布和最小化角灵敏度。关键的创新在于纳米压印金字塔扩散器，它解决了基于干涉的多层滤波器固有的角灵敏度的关键限制。纳米压印扩散器引入确定性散射特性，确保均匀的光分布，降低角灵敏度，并提供稳定的光学性能。采用磁控溅射法制备了由SiO2和TiO2交替组成的多层滤光片，该滤光片在400-700 nm可见光范围内具有较高的透光率，同时有效阻挡紫外线（200-400 nm）和近红外（700-1100 nm）波长。最终的结构由29层组成，测量的光学性能与理论模拟非常吻合。为了增强干涉滤光片的均匀光分布并降低其固有角度依赖性，采用纳米压印技术制造了一种表面扩散器，复制了通过各向异性KOH湿法蚀刻在硅上的随机排列的金字塔结构。通过不同的蚀刻时间，得到了具有不同散射剖面的扩散器结构，其中蚀刻6 min的样品雾度值最高（92.38%），扩散能力最强。此外，F13-TCS表面改性使扩散器疏水，接触角最大达到124°，增强了耐用性和自清洁能力。这种改进的方法为提高光学系统在各种应用中的性能提供了一个强大的解决方案。

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引用次数: 0

Ionic liquid ion sources for focused ion beam applications: A review 离子液体离子源在聚焦离子束中的应用综述

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-12-01 DOI: 10.1016/j.mne.2025.100337

Rachel Ord , Bita Pourbahari , Jacques Gierak , Nabil Bassim

Focused ion beam (FIB) technology has transformed materials science by enabling precise micro- and nano-scale modifications through ion beam interactions. Originally developed for semiconductor doping and device fabrication, FIBs use different ionization sources such as liquid metals (e.g., gallium), gas field ionization, and plasma sources. Recent advancements include the use of Ionic Liquid Ion Sources (ILIS), which promise enhanced capabilities for materials research and applications. Recent progress in the Ionic Liquid Ion Sources- Focused ion beam (ILIS-FIB) technology is presented in this overview paper. ILIS-FIB systems operate similarly to conventional systems but employ ionic liquids (ILs) as ion sources, ionizing IL molecules at the emitter tip with applied voltage and using standard focusing components to refine the ion beam. Challenges which are reviewed in this article, include maintaining pure ionic emission for stable operation, necessitating optimization of tip emitting properties, IL characteristics, and voltage settings. It was reviewed in this paper that, ILIS-FIB systems use room-temperature ILs with low melting points, low vapor pressures, and customizable chemical compositions to ensure pure ion emission and improve beam performance for emerging applications. Despite challenges in beam composition and commercial readiness, ILIS-FIB research focuses on developing mathematical models to predict beam stability and performance, advancing theoretical groundwork for refinement and eventual commercialization of ILIS-based FIB technologies in materials science. This overview can shed light on the understanding of ionic liquid ion sources for Focused Ion Beam applications.

聚焦离子束（FIB）技术通过离子束相互作用实现精确的微纳米级修饰，从而改变了材料科学。FIBs最初是为半导体掺杂和器件制造而开发的，它使用不同的电离源，如液态金属（如镓）、气体场电离和等离子体源。最近的进展包括离子液体离子源（ILIS）的使用，它有望增强材料研究和应用的能力。本文综述了离子液体离子源聚焦离子束（ILIS-FIB）技术的最新进展。lis - fib系统的工作原理与传统系统类似，但采用离子液体（ILs）作为离子源，在施加电压的情况下电离发射器尖端的IL分子，并使用标准聚焦组件来细化离子束。本文回顾的挑战包括保持纯离子发射以稳定运行，需要优化尖端发射特性，IL特性和电压设置。本文综述了ILIS-FIB系统使用具有低熔点、低蒸汽压和可定制化学成分的室温ilis，以确保纯离子发射和提高光束性能，用于新兴应用。尽管在光束组成和商业化准备方面存在挑战，但ILIS-FIB研究的重点是开发数学模型来预测光束的稳定性和性能，为材料科学中基于ilis的FIB技术的改进和最终商业化推进理论基础。本文综述有助于对聚焦离子束应用中离子液体离子源的理解。

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引用次数: 0

Optical force measurement method by a nanomechanical resonant device with electrostatic force coupling 采用纳米机械谐振装置与静电力耦合的光学力测量方法

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-12-01 DOI: 10.1016/j.mne.2025.100341

Kazuki Bessho, Shin'ichi Warisawa, Reo Kometani

In this study, a highly sensitive method for measuring optical forces using a nanomechanical resonant device is proposed. This device features a nanomechanical resonator electrostatically coupled to a cantilever using an applied voltage. When an optical force bends the cantilever, the electrostatic force between the cantilever and the resonator changes, enabling the measurement of the optical force by observing the corresponding shift in the resonator's resonance frequency. By structurally separating the cantilever that receives the optical force from the resonator whose vibration is measured, this device effectively reduces the influence of photothermal effects and enables highly sensitive optical force measurement even with a continuous laser. A laser was used to apply an optical force to the cantilever, and the resulting change in the resonator's resonance frequency due to the optical force was measured under various electrostatic force conditions. The experimental results achieved a best calculated optical force measurement resolution of 0.15 fN, even at room temperature and atmospheric pressure. This study suggests the existence of an optimal electrostatic force for optical force measurement, indicating the potential to achieve even higher sensitivity with the same device. Furthermore, this device-based method is expected to become a key technique for the direct measurement of optical forces.

在这项研究中，提出了一种利用纳米机械谐振装置测量光力的高灵敏度方法。该装置的特点是使用施加电压的纳米机械谐振器静电耦合到悬臂上。当光力使悬臂梁弯曲时，悬臂梁与谐振器之间的静电力发生变化，通过观察谐振器谐振频率的相应位移来测量光力。通过结构上将接收光力的悬臂与被测振动的谐振器分离，该装置有效地减少了光热效应的影响，即使使用连续激光也能实现高灵敏度的光力测量。利用激光对悬臂梁施加光力，在各种静电力条件下测量了光力对谐振腔谐振频率的影响。实验结果表明，即使在室温和常压下，光学力测量的最佳分辨率也达到0.15 fN。这项研究表明存在一种最佳的静电力用于光学力测量，这表明使用相同的设备可以实现更高的灵敏度。此外，这种基于器件的方法有望成为直接测量光学力的关键技术。

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引用次数: 0

Side-wall metallization process for enhanced electrical contact in SOI-based MEMS switches 基于soi的MEMS开关中增强电接触的侧壁金属化工艺

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-11-17 DOI: 10.1016/j.mne.2025.100338

Inês S. Garcia , Filipa C. Mota , Jorge M. Pereira , Fahimullah Khan , Carlos Ferreira , Jorge Cabral , José Fernandes , Carlos Calaza , Rosana A. Dias , Filipe S. Alves

MEMS inertial switches provide a zero-power alternative to conventional accelerometers by mechanically closing an electrical contact only when a specific acceleration threshold is exceeded. However, conventional SOI-based MEMS switches suffer from high silicon-to‑silicon contact resistance, which degrades signal reliability and limits device performance. This work presents a novel fabrication process that enables selective metal coating of contact side-wall in SOI-based MEMS inertial switches, aiming to reduce contact resistance while maintaining compatibility with standard MEMS bulk micromachining process flows. The proposed method introduces a pre-release metallization sequence combining deep reactive ion etching (DRIE), EKC-based cleaning, directional sputtering of an aluminum alloy, and a photosensitive polyimide (PI) masking process, followed by chemical mechanical planarization (CMP). This integration eliminates the need for post-release processing or dry-film resists and ensures alignment with SOI process constraints. Optical and scanning electron microscopy (SEM) inspection confirmed proper pattern transfer, trench formation, and planarization, while energy-dispersive X-ray spectroscopy (EDX) analysis revealed partial side-wall metal coverage, predominantly on upper regions due to shadowing effects induced by DRIE scalloping. Electrical measurements demonstrated a reduction in contact resistance from over 3 kΩ to 200 Ω in metallized areas. Although out-of-plane misalignment between electrodes (≈250 nm) limited reliable AlAl contact formation, the demonstrated process provides a scalable approach to create low-resistance contacts in bulk-micromachined MEMS switches and establishes a foundation for future optimization through thicker or alternative metal depositions.

MEMS惯性开关仅在超过特定加速度阈值时机械关闭电触点，从而为传统加速度计提供零功率替代方案。然而，传统的基于soi的MEMS开关存在高硅对硅接触电阻，这会降低信号可靠性并限制器件性能。这项工作提出了一种新的制造工艺，可以在基于soi的MEMS惯性开关的接触侧壁上选择性地涂覆金属，旨在降低接触电阻，同时保持与标准MEMS体微加工工艺流程的兼容性。该方法引入了一种预释放金属化序列，包括深度反应离子蚀刻（DRIE）、基于ekc的清洗、铝合金的定向溅射和光敏聚酰亚胺（PI）掩蔽工艺，然后是化学机械平面化（CMP）。这种集成消除了对释放后处理或干膜抗蚀剂的需要，并确保与SOI工艺约束保持一致。光学和扫描电子显微镜（SEM）检查证实了适当的模式转移、沟槽形成和平面化，而能量色散x射线光谱（EDX）分析显示了部分侧壁金属覆盖，主要是由于DRIE扇贝引起的阴影效应在上部区域。电学测量表明，在金属化区域，接触电阻从3 kΩ以上降低到200 Ω。虽然电极之间的面外错位（≈250 nm）限制了可靠的AlAl触点形成，但所演示的工艺提供了一种可扩展的方法，可以在大块微机械MEMS开关中创建低电阻触点，并为未来通过更厚或替代金属沉积进行优化奠定了基础。

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引用次数: 0

The comparison of NH3 and N2O plasma treatments on PZT Lead zirconate titanate sensing membranes applied in biosensor NH3和N2O等离子体处理在PZT锆钛酸铅传感膜上的应用比较

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-11-15 DOI: 10.1016/j.mne.2025.100334

Ming Ling Lee, Sung Hao Li

This study conducted a comparative analysis of NH3 and N₂O plasma treatments on PZT (lead zirconate titanate, Pb(Zr_0.52Ti_0.48)O₃) sensing membranes integrated within the EIS (Electrolyte-Insulator-Semiconductor) structure. PZT sensing membranes subjected to NH₃ and N₂O plasma treatments were examined using multiple material analysis techniques, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The PZT sensing membrane treated with N₂O plasma for 1 min exhibited the highest sensitivity, superior linearity, lowest hysteresis voltage, and minimal drift rate compared to the other N₂O plasma conditions. Likewise, the PZT sensing membrane treated with NH₃ plasma for 6 min demonstrated the highest sensitivity, optimal linearity, excellent H⁺ selectivity, lowest hysteresis voltage, and least drift rate among the various plasma conditions. Additionally, we investigated the biomedical sensing characteristics of PZT sensing membranes in urea, creatinine, and glucose solutions. Measurements revealed that PZT sensing membranes exhibited optimal sensing characteristics for urea, creatinine, and glucose when subjected to a 6-min exposure to ammonia plasma. Notably, the sensing membrane demonstrated the best sensitivity and linearity for glucose, with values of 15.5 mV/mM and 98.49 %, respectively. These results highlight that the PZT sensing membrane, following plasma treatment within the EIS structure, is well-suited for applications in biomedical devices.

本研究对比分析了NH3和N2O等离子体处理对集成在EIS（电解质-绝缘体-半导体）结构内的PZT（锆钛酸铅，Pb(Zr0.52Ti0.48)O3）传感膜的影响。采用多种材料分析技术，包括x射线衍射（XRD）、x射线光电子能谱（XPS）和原子力显微镜（AFM），对经过NH3和N2O等离子体处理的PZT传感膜进行了检测。与其他N2O等离子体条件相比，经N2O等离子体处理1 min的PZT传感膜具有最高的灵敏度、良好的线性度、最低的滞后电压和最小的漂移率。同样，在不同的等离子体条件下，经过NH3等离子体处理6 min的PZT传感膜表现出最高的灵敏度、最佳的线性度、优异的H+选择性、最低的滞后电压和最小的漂移率。此外，我们还研究了PZT传感膜在尿素、肌酐和葡萄糖溶液中的生物医学传感特性。测量结果显示，PZT传感膜在暴露于氨血浆6分钟时，对尿素、肌酐和葡萄糖表现出最佳的传感特性。值得注意的是，该传感膜对葡萄糖的灵敏度和线性度最高，分别为15.5 mV/mM和98.49%。这些结果表明，在EIS结构内进行等离子体处理的PZT传感膜非常适合应用于生物医学设备。

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引用次数: 0

Impact of cavity shape on thermal accelerometer parameters 空腔形状对热加速度计参数的影响

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-11-13 DOI: 10.1016/j.mne.2025.100331

Toulmé Valentin , Ben Salk Soukaina , Faucher Marc , Combette Philippe , Giani Alain

This publication examines CFD (Computational Fluid Dynamics) analyses of a uniaxial accelerometer's behavior, focusing on convective heat transfer. A thermal convective accelerometer is a sensor that employs hot wire technology to quantify acceleration. The analytical modelling of sensitivity is inadequate for predicting sensitivity evolution as a function of acceleration in complex scenarios, particularly in temporal investigations; hence, CFD simulations have been employed. The sensitivity dependent on the sensor's form has been examined through simulations for accelerations exceeding 100,000 g. Furthermore, the bandwidth of the thermal accelerometer has been studied under various setups. The outcomes of these simulations will enhance sensor performance (cavity and wire dimensions, spacing between detectors and heater) to attain a measurement range of 100,000 g and a bandwidth of 10 kHz.

本出版物研究了单轴加速度计行为的CFD（计算流体动力学）分析，重点是对流传热。热对流加速度计是一种采用热丝技术来量化加速度的传感器。敏感性的分析模型不足以预测在复杂情况下，特别是在时间调查中，敏感性作为加速度的函数的演变；因此，采用CFD模拟。灵敏度依赖于传感器的形式已经通过模拟超过100,000 g的加速度进行了检查。此外，还研究了热加速度计在不同设置下的带宽。这些模拟的结果将提高传感器的性能（腔和导线尺寸，探测器和加热器之间的间距），以达到100,000 g的测量范围和10 kHz的带宽。

引用次数: 0

Review of plasma etching processes for III-V semiconductors III-V型半导体等离子体刻蚀工艺研究进展

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-11-11 DOI: 10.1016/j.mne.2025.100330

Alison Clarke , Maxime Darnon , Karin Hinzer , Mathieu de Lafontaine

This paper provides a comprehensive literature review and analysis of III-V semiconductor plasma etching, highlighting key etching considerations and providing literature references to inform future process development. Plasma etching processes for III-V materials such as gallium arsenide (GaAs), indium phosphide (InP), and gallium nitride (GaN) are essential to fabricate many photonic and optoelectronic devices. Such applications frequently require etches with high anisotropy, selectivity and aspect ratio while maintaining minimal roughness and lateral etching. Ten plasma etching techniques used for III-V materials as well as the impact of plasma process parameters on etch results are reviewed. Main etching challenges include aluminum oxidation, non-volatile indium etch subproducts when

<

150 °C, and strong III-N bonds. Exhaustive reference tables are generated to report capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) etching process parameters for the main binary, ternary, and quaternary III-V semiconductors. An analysis of binary III-V etching is presented in a summative reference plot, which highlights trends in etch rate, etch technology, and active gas chemistry. Among studies reporting etch rates, gallium arsenide was etched most frequently, with ICP being the dominant etch technique. Multilayer systems and plasma damage are briefly discussed, with post-etch treatments and hydrogen plasmas being used for damage passivation. Overall, III-V materials can be etched with plasma up to several

μ

m/min, with most processes using chlorine-based chemistries such as Cl

_{2}

, BCl

_{3}

, and SiCl

_{4}

.

本文对III-V型半导体等离子体刻蚀进行了全面的文献综述和分析，强调了刻蚀的关键注意事项，并为未来的工艺发展提供了文献参考。砷化镓（GaAs）、磷化铟（InP）和氮化镓（GaN）等III-V材料的等离子体刻蚀工艺对于制造许多光子和光电器件至关重要。此类应用通常需要具有高各向异性，选择性和纵横比的蚀刻，同时保持最小的粗糙度和横向蚀刻。综述了十种用于III-V材料的等离子体刻蚀技术以及等离子体工艺参数对刻蚀结果的影响。主要的蚀刻挑战包括铝氧化，150°C时的非挥发性铟蚀刻子产品，以及强III-N键。详尽的参考表生成报告电容耦合等离子体（CCP）和电感耦合等离子体（ICP）蚀刻工艺参数的主要二元，三元和四元III-V半导体。在总结参考图中对二元III-V刻蚀进行了分析，重点介绍了刻蚀速率，刻蚀技术和活性气体化学的趋势。在报告蚀刻率的研究中，砷化镓蚀刻最频繁，ICP是主要的蚀刻技术。本文对多层体系和等离子体损伤进行了简要的讨论，并利用刻蚀后处理和氢等离子体进行损伤钝化。总体而言，III-V材料可以用高达几μm/min的等离子体蚀刻，大多数工艺使用氯基化学物质，如Cl2， BCl3和SiCl4。

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引用次数: 0

Microfabrication of an 8-qubit processor chip for a trapped-ion quantum computer demonstrator 捕获离子量子计算机演示机用8量子位处理器芯片的微加工

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-11-10 DOI: 10.1016/j.mne.2025.100336

Nila Krishnakumar , Friederike Giebel , Eike Iseke , Konstantin Thronberens , Jacob Stupp , Nora D. Stahr , Rodrigo Munoz , Brigitte Kaune , Teresa Meiners , Ludwig Krinner , Christian Ospelkaus

Multilayer surface-electrode ion traps provide a scalable platform for quantum processors. In this paper we present a demonstrator chip designed to implement an 8-qubit shuttling-based quantum processor with chip-integrated microwave control for quantum gates. The design is based on a linear Paul trap geometry. All-to-all connectivity will be implemented through ion swapping. The production of the trap chip is carried out with multistep microfabrication. The 2-layer ion trap chip with two storage registers and an interaction zone has a size of 5

mm

x 10

mm

. Flexibility in signal routing is improved through the use of thick and planarised metal–dielectric layers.

多层表面电极离子阱为量子处理器提供了一个可扩展的平台。在本文中，我们提出了一个演示芯片，旨在实现一个基于8量子位穿梭的量子处理器，该处理器具有芯片集成的微波控制量子门。该设计基于线性保罗陷阱几何。全对全连接将通过离子交换实现。陷阱芯片的生产采用多步微细加工。具有两个存储寄存器和一个相互作用区的2层离子阱芯片的尺寸为5mm x 10mm。通过使用厚而扁平的金属介电层，提高了信号路由的灵活性。

引用次数: 0

Evaluation of annealing effects on the deformation of Ti/Au multi-layered micro-cantilevers 退火对Ti/Au多层微悬臂梁变形的影响

IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering

Pub Date : 2025-11-09 DOI: 10.1016/j.mne.2025.100333

Ryosuke Miyai , Tomoyuki Kurioka , Chun-Yi Chen , Tso-Fu Mark Chang , Katsuyuki Machida , Hiroyuki Ito , Yoshihiro Miyake , Masato Sone

This paper reports the effects of annealing on the deformation behavior of Ti/Au multi-layered micro-cantilevers. A total of 72 Ti/Au multi-layered micro-cantilevers with different geometric parameters are fabricated. The annealing temperature up to 200 °C hardly causes their deformation, while the annealing performed at temperatures higher than 200 °C induces the deformation of the micro-cantilevers with thinner beam thickness. Auger electron spectroscopy measurements for the electrodeposited-Au components subjected to annealing at different temperatures suggest that the observed deformation is partially due to the diffusion of titanium and oxygen atoms induced by the annealing.

本文报道了退火对Ti/Au多层微悬臂梁变形行为的影响。共制备了72根不同几何参数的Ti/Au多层微悬臂梁。当退火温度达到200℃时，微悬臂梁几乎不发生变形，而当退火温度高于200℃时，微悬臂梁的梁厚较薄，微悬臂梁发生变形。对在不同温度下退火的电沉积金元件进行的俄歇电子能谱测量表明，观察到的变形部分是由于退火引起的钛原子和氧原子的扩散。

引用次数: 0