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Exploring the diversity of antenna-based sensors: A comparative study of slot, dipole, electromagnetic band gap, and patch designs 探索天线传感器的多样性:缝隙、偶极子、电磁带隙和贴片设计的比较研究
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-01 Epub Date: 2026-01-02 DOI: 10.1016/j.mne.2025.100344
Hilary Scott Nkimbeng Cho, Jin W. Choi
This paper presents a comprehensive comparative review of four widely used antenna-based sensor designs: slot, dipole, electromagnetic band gap (EBG), and patch antennas, highlighting their roles in various sensor applications. These antennas offer advantages, such as compact size, high sensitivity, ease of fabrication, and design flexibility, which make them be attractive for applications in environmental monitoring, health diagnostics, and structural sensing. The study investigates the operating principles, material configurations, and sensing mechanisms of each antenna type with an emphasis on how variations in the surrounding dielectric environment alter the effective permittivity and subsequently induce measurable shifts in the antenna's resonant frequency. Comparative analyses are conducted based on dielectric materials, operating frequency ranges, sensing targets, and resonance frequency shift, which serves as the primary sensing parameter. The findings highlight the adaptability and application-specific advantages of antenna-based sensors, that offer scalable solutions in a broad range of applications.
本文介绍了四种广泛使用的基于天线的传感器设计:缝隙、偶极子、电磁带隙(EBG)和贴片天线,重点介绍了它们在各种传感器应用中的作用。这些天线具有尺寸紧凑、灵敏度高、易于制造和设计灵活等优点,这使得它们在环境监测、健康诊断和结构传感方面的应用具有吸引力。该研究调查了每种天线类型的工作原理、材料配置和传感机制,重点研究了周围介质环境的变化如何改变有效介电常数,并随后引起天线谐振频率的可测量位移。基于介质材料、工作频率范围、传感目标和共振频移作为主要传感参数,进行了对比分析。研究结果强调了基于天线的传感器的适应性和特定应用优势,为广泛的应用提供了可扩展的解决方案。
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引用次数: 0
Process development to realize all-semiconductor InGaP-GaAs based photonic-crystal surface emitting lasers 实现基于InGaP-GaAs的全半导体光子晶体表面发射激光器的工艺开发
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-01 Epub Date: 2026-02-11 DOI: 10.1016/j.mne.2026.100354
Sammeta Poojitha, Pietro Della Casa, Olaf Brox, Jörg Fricke, Ralph-Stephan Unger, Dirk Rentner, Ben King, Paul Crump, Markus Weyers, Andrea Knigge, Günther Tränkle
Semiconductor lasers are the most efficient devices for light generation. The Photonic Crystal Surface Emitting Laser (PCSEL) is a type of semiconductor laser that uses a 2D photonic crystal (PC) structure acting as the lateral cavity. The 2D photonic crystals realized in this work consist of a 150 nm thick InGaP layer containing a triangular pattern with a PC-lattice period of 320 nm. The transfer of the triangular pattern into InGaP is done through e-beam lithography followed by dry etching. Hydrogen silsesquioxane (HSQ) resist acts as mask during the etching process. A dry etch recipe is developed in this work to etch through the InGaP with minimum damage to the active region, which is at a distance of ∼50 nm under the InGaP layer. Finally, the InGaP pillars are overgrown by MOVPE, thereby forming buried 2D features. The complete layer structure shows intense electroluminescence at target wavelength. The results obtained after the overgrowth pave the way for the fabrication of PCSELs with all-semiconductor integrated PCs with high optical coupling.
半导体激光器是最有效的光产生装置。光子晶体表面发射激光器(PCSEL)是一种利用二维光子晶体(PC)结构作为侧腔的半导体激光器。在本工作中实现的二维光子晶体由150nm厚的InGaP层组成,其中包含一个三角形图案,pc晶格周期为320nm。三角图案转移到InGaP是通过电子束光刻,然后干蚀刻完成的。氢硅氧烷(HSQ)抗蚀剂在蚀刻过程中起掩膜作用。在这项工作中,开发了一种干式蚀刻配方,可以在InGaP层下方约50 nm的距离处蚀刻通过InGaP,对活性区域的损害最小。最后,InGaP矿柱被MOVPE覆盖,形成埋藏的二维地物。完整的层状结构在目标波长处表现出强烈的电致发光。研究结果为利用高光耦合的全半导体集成pc制备PCSELs铺平了道路。
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引用次数: 0
Stress optimization in DC magnetron sputtered AlN layers for fully clamped bistable piezoelectric plate devices 全箝位双稳压电板器件的直流磁控溅射AlN层应力优化
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-01 Epub Date: 2025-12-19 DOI: 10.1016/j.mne.2025.100345
Shareena Muringakodan , Sina Zare Pakzad , Ulrich Schmid , Michael Schneider
In this paper, we demonstrate the fabrication and characterization of bistable piezoelectric plates with a precisely tuned residual stress to achieve buckling-induced bistability. The plate consist of a multilayered structure, with a piezoelectric aluminum nitride layer sandwiched between top and bottom electrode layers. The stress in the aluminum nitride thin film is tuned by adjusting the DC magnetron sputtering parameters, including sputtering pressure, gas flow rates, target-substrate distance, and substrate bias voltage to introduce the compressive stress needed to induce plate buckling. Experimental results demonstrate that reducing sputtering pressure while controlling nitrogen flow, with no argon admixture, and applying a substrate bias voltage above 10 V enables compressive stress in the aluminum nitride layer within the desired range of −800 to −600 MPa, resulting in bistable plates. The bistability of the fabricated plates is evaluated by analyzing their potential energy profiles under applied external perpendicular forces, using a bulge test setup, where uniform air pressure is applied to the plate surface. The plates exhibit a characteristic hysteresis loop in their load-deflection response, with transitions between buckled-down and buckled-up states at approximately 10 mbar and −30 mbar, respectively. The initial buckling amplitude of the fabricated plates, within the optimized stress range, is measured to be 5–7 μm, with a total displacement of 10–12 μm when switching between both states. Furthermore, in each stable state, the plates exhibit an additional displacement of approximately 5 μm when subjected to a relative air pressure of 1 bar.
在本文中,我们展示了具有精确调谐残余应力的双稳压电板的制造和表征,以实现屈曲诱导的双稳。该板由多层结构组成,压电氮化铝层夹在上下电极层之间。通过调整直流磁控溅射参数,包括溅射压力、气体流速、靶-衬底距离和衬底偏置电压来调节氮化铝薄膜中的应力,以引入引起板屈曲所需的压应力。实验结果表明,在控制氮气流量的同时降低溅射压力,不添加氩气,并施加大于10 V的衬底偏置电压,可以使氮化铝层中的压应力在−800 ~−600 MPa的期望范围内,从而得到双稳板。通过在施加外部垂直力的情况下分析其势能分布来评估制造板的双稳定性,使用膨胀试验装置,在该装置中,均匀的空气压力施加于板表面。板在其负载-挠度响应中表现出典型的迟滞回线,分别在大约10毫巴和- 30毫巴的状态下在屈曲和屈曲状态之间转换。在优化应力范围内,制备板的初始屈曲幅值为5 ~ 7 μm,两种状态切换时的总位移为10 ~ 12 μm。此外,在每个稳定状态下,当相对空气压力为1 bar时,板表现出约5 μm的额外位移。
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引用次数: 0
Low-thermal-budget fabrication of ZnO TFTs via urea-assisted combustion synthesis of high-k ZrO2 gate dielectrics 尿素辅助燃烧合成高k ZrO2栅极电介质制备ZnO tft的低热预算研究
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-01 Epub Date: 2025-12-11 DOI: 10.1016/j.mne.2025.100342
George Mitrousis, Michael Georgas, Loukas Michalas, Filippos Farmakis
In this work, we present a low-temperature and cost-effective fabrication of zinc oxide (ZnO) based thin film transistors (TFTs) having high-k zirconium oxide (ZrO2) thin films as gate dielectrics. By employing a sol-gel approach combined with urea-assisted solution combustion synthesis (SCS), we reduced the thermal annealing budget to 200 °C, enabling the deposition of uniform and transparent (>98 % optical transparency in the visible range) dielectric films suitable for temperature sensitive substrates. The resulting ZrO2 layers exhibit a relative permittivity (k) of approximately 12.9 at 4 kHz and a leakage current density of 10−7 A cm−2 for electric field equal to 105 V cm−1 supporting low-voltage TFT operation. TFTs with ZnO active channels and indium tin oxide (ITO) source and drain electrodes were fabricated and patterned using liquid crystal display (LCD) based photolithography without necessitating photomasks or specialized patterning equipment for additive printing. The devices showed well-defined transistor characteristics with field-effect mobilities reaching 0.42 cm2 V−1 s−1, threshold voltages around −0.33 V, subthreshold swing of 491 mV dec−1 and on/off current ratios on the order of 102. Overall, this approach offers a flexible, scalable and low-temperature route to fabricating high-k ZrO2 gate dielectrics, while the addition of an affordable alternative to photolithography facilitates rapid prototyping of TFT devices.
在这项工作中,我们提出了一种以高k氧化锆(ZrO2)薄膜作为栅极电介质的低温和经济高效的氧化锌(ZnO)薄膜晶体管(TFTs)的制造方法。通过采用溶胶-凝胶方法结合尿素辅助溶液燃烧合成(SCS),我们将热退火预算降低到200°C,从而能够沉积均匀透明(可见光范围内光学透明度为98%)的介电薄膜,适用于温度敏感基底。所得的ZrO2层在4 kHz时的相对介电常数(k)约为12.9,当电场为105 V cm−1时,漏电流密度为10−7 a cm−2,支持低压TFT操作。采用基于液晶显示(LCD)的光刻技术制备了具有ZnO有源通道和氧化铟锡(ITO)源极和漏极的TFTs,并对其进行了图案化处理,而不需要光掩膜或专门的图案化设备进行增材印刷。器件表现出良好的晶体管特性,场效应迁移率达到0.42 cm2 V - 1 s - 1,阈值电压约为- 0.33 V,亚阈值摆幅为491 mV dec - 1,开/关电流比约为102。总的来说,这种方法为制造高k ZrO2栅极电介质提供了一种灵活、可扩展和低温的途径,同时增加了一种经济实惠的光刻替代方案,促进了TFT器件的快速原型制作。
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引用次数: 0
Laser interference lithography for ordered growth of nanowires in quantum bit development 量子比特开发中纳米线有序生长的激光干涉光刻技术
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-01 Epub Date: 2025-12-08 DOI: 10.1016/j.mne.2025.100343
Javier Bravo , Lisandro Jofre , Paloma Tejedor
Hybrid InAs–Al nanowires are essential building blocks for topological qubits, owing to their ability to host Majorana zero modes. In this work, we present a scalable method for fabricating ordered arrays of Au nanodots on GaAs(111)B substrates using laser interference lithography (LIL) in combination with a multilayer hard-mask process. These nanodot arrays enable site-controlled growth of InAs and InAs–Al nanowires via molecular beam epitaxy (MBE) using the vapor–liquid–solid (VLS) mechanism. Surface cleaning treatments are found to strongly influence nanowire morphology and growth yield, with HCl-based cleaning providing enhanced selectivity for vertical (111)B-oriented nanowire growth. Structural characterization by scanning electron microscopy (SEM) and reflection high-energy electron diffraction (RHEED) confirms the formation of uniform wurtzite-phase InAs nanowires subsequently coated with conformal Al shells. Although further yield optimization is required, the results demonstrate that LIL enables large-area, deterministic nanowire positioning with the structural quality necessary for quantum device fabrication, representing a significant advance toward scalable topological quantum computing.
混合铟铝纳米线是拓扑量子位元的基本组成部分,因为它们能够承载马约拉纳零模式。在这项工作中,我们提出了一种可扩展的方法,利用激光干涉光刻(LIL)结合多层硬掩膜工艺在GaAs(111)B衬底上制造有序的Au纳米点阵列。这些纳米点阵列利用气-液-固(VLS)机制,通过分子束外延(MBE)实现了InAs和InAs - al纳米线的位置控制生长。研究发现,表面清洁处理对纳米线的形态和生长收率有很大影响,以盐酸为基础的清洁提高了垂直(111)b取向纳米线生长的选择性。通过扫描电子显微镜(SEM)和反射高能电子衍射(RHEED)的结构表征,证实了均匀纤锌矿相InAs纳米线的形成,随后涂覆了保形铝壳层。虽然还需要进一步优化良率,但结果表明,LIL可以实现大面积、确定性的纳米线定位,并具有量子器件制造所需的结构质量,这代表了可扩展拓扑量子计算的重大进步。
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引用次数: 0
Electrode shading lithography: A new method to avoid side dissolution of adhesion layer during electrodeposition of platinum black 电极遮光光刻:一种避免铂黑电沉积过程中附着层侧溶的新方法
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-01 Epub Date: 2026-02-20 DOI: 10.1016/j.mne.2026.100355
Alexis Bernatets , Sakina Bensalem , Alexandre Da Silva , Jean-Charles Duclos-Vallée , Sophie Griveau , Bruno Le Pioufle
Electrochemical biosensors often rely on the detection of hydrogen peroxide (H₂O₂), produced upon enzymatic reaction, with platinum electrodes being a preferred choice due to their catalytic efficiency. A cost-effective alternative is the use of gold electrodes functionalised through the electrodeposition of platinum black (PtB). However, direct platinum black electrodeposition on thin film electrodes can lead to the delamination of the metallic substrate layer. We present a novel fabrication strategy — Electrode Shadowing Lithography (ESL) — that protects the edges of the electrodes without the need for additional photomasks. By exploiting the transparency of silica substrates, SU8 photoresist is selectively exposed from the back side of the transparent wafer, using the electrodes themselves as shadow masks. This protocol creates a protective SU8 layer that protects the metallic adhesion layer of the electrodes from being etched during PtB deposition, preventing the flagging of the electrodes. Physical and electrochemical characterisations confirm successful protection and functionalisation. ESL offers a novel, cost-effective, and alignment-free solution which opens the way for microfabrication of electrodes for H₂O₂-sensitive biosensors that is more robust and accessible to facilities with less equipment.
电化学生物传感器通常依赖于检测酶促反应产生的过氧化氢(H₂O₂),由于其催化效率,铂电极是首选。一种具有成本效益的替代方法是使用通过电沉积铂黑(PtB)功能化的金电极。然而,在薄膜电极上直接电沉积铂黑会导致金属基板层的分层。我们提出了一种新的制造策略——电极阴影光刻(ESL)——它可以保护电极的边缘,而不需要额外的光罩。通过利用二氧化硅衬底的透明度,SU8光刻胶可以选择性地从透明晶圆的背面暴露出来,使用电极本身作为阴影掩膜。该方案创建了一个保护性的SU8层,保护电极的金属粘附层在PtB沉积过程中不被蚀刻,防止电极的标记。物理和电化学表征证实了成功的保护和功能化。ESL提供了一种新颖的,具有成本效益的,免校准的解决方案,为H₂O₂敏感生物传感器的电极微制造开辟了道路,这种传感器更坚固,设备更少。
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引用次数: 0
Resistless photomask fabrication using electrolithography 利用电光刻技术制造无电阻光掩膜
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-01 Epub Date: 2025-09-12 DOI: 10.1016/j.mne.2025.100320
S.N. Ghosh, S. Talukder
Photolithography is the most widely used lithography technique for commercial fabrication of micro-devices as well as for research and development purposes. However, to perform photolithography, we need a photomask containing the desired pattern. Conventional methods of photomask fabrication involve either photolithography using a direct laser writer or electron-beam lithography. Interestingly, the rise of sequential write scanning probe lithography (SPL) techniques has given rise to various novel methods of direct photomask writing. In this study, we focus on photomask fabrication using a SPL technique, known as ‘Electrolithography’ (ELG), with which multi-scale features can be easily patterned. This is a subtractive lithography technique that involves direct patterning on chromium (Cr) thin films. Being an electrical and direct-write process, ELG bypasses the need for high-power UV laser, electron gun, and polymer resist layers thereby making the process cost-effective and carbon-efficient. We propose a resistless, reliable and novel photomask fabrication process, using the ELG technique, based on a bimetallic architecture. Using the proposed method, we were able to obtain lines having a width of <2 μm, in the best case, and lines with a width < 10 μm repeatedly. We were also able to transfer the fabricated patterns reliably and repeatedly onto a material of choice.
光刻技术是微器件商业制造以及研究和开发中应用最广泛的光刻技术。然而,为了进行光刻,我们需要一个包含所需图案的掩模。传统的掩模制造方法包括使用直接激光书写器的光刻或电子束光刻。有趣的是,顺序写入扫描探针光刻(SPL)技术的兴起导致了各种新的直接掩模写入方法的出现。在这项研究中,我们专注于使用SPL技术(称为“电光刻”(ELG))制作掩模,该技术可以轻松地绘制多尺度特征。这是一种减法光刻技术,涉及在铬(Cr)薄膜上直接图案。作为一种电气直接写入工艺,ELG无需高功率紫外激光、电子枪和聚合物抗蚀剂层,从而使该工艺具有成本效益和碳效率。我们提出了一种基于双金属结构的、不可抗拒的、可靠的、新颖的光掩膜制造工艺,使用ELG技术。利用所提出的方法,我们能够在最好的情况下获得宽度为<;2 μm的线,并且可以反复获得宽度为<; 10 μm的线。我们还能够可靠地将制造的图案重复地转移到选择的材料上。
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引用次数: 0
A mesoscale compliant expansion chamber for a catalytic micro-engine 催化微型发动机的中尺度柔性膨胀室
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-01 Epub Date: 2025-11-20 DOI: 10.1016/j.mne.2025.100339
Serena Basile , Johannes F.L. Goosen
As engineering applications become increasingly complex, the need for miniaturization is present in several technological fields. Places hardly reachable by traditional tools and machines, can be accessed thanks to miniaturized devices and, especially when such devices are remotely controlled or autonomous, it implies the need for miniaturized, standalone actuators. Most high-energy density actuators for these applications can not be operated if untethered from an external power-supply.
In this study, we investigate the manufacturing of a mesoscale compliant expansion chamber for a miniaturized chemical-based actuator. Photopolymerization and material jetting are used for manufacturing the prototypes, exhibiting dimensions of 9.8 mm diameter, 7.5 mm height and 140 μm thickness. These dimensions are such as to allow the device to fit inside of the flapping wings micro aerial vehicle (FWMAV) that it has to power. Fabrication of such dimensions, along with the peculiar geometry of the chamber, taps into the limitations of the photopolymerization process and highlights areas of improvement for this rapidly-developing technology. The devices are successfully tested for a linear motion, mimicking that of a cylinder-piston combination, as in a conventional expansion chamber, and are actuated by a pressure pulse.
随着工程应用的日益复杂,许多技术领域都出现了小型化的需求。传统工具和机器难以到达的地方,可以通过小型化设备进入,特别是当这些设备是远程控制或自主的时候,这意味着需要小型化的独立执行器。大多数用于这些应用的高能密度致动器如果脱离外部电源就无法操作。在本研究中,我们研究了用于小型化化学致动器的中尺度柔性膨胀室的制造。采用光聚合和材料喷射技术制造原型,尺寸为直径9.8 mm,高度7.5 mm,厚度140 μm。这些尺寸是为了使该设备能够安装在它必须提供动力的扑翼微型飞行器(FWMAV)内。这种尺寸的制造,以及腔室的特殊几何形状,利用了光聚合工艺的局限性,并突出了这项快速发展的技术的改进领域。该装置已成功地进行了线性运动测试,模拟了传统膨胀室中气缸-活塞组合的运动,并由压力脉冲驱动。
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引用次数: 0
Fully integrated automatic microfluidic setup for immobilization, analysis and non-selective release of particles 完全集成的自动微流控装置固定化,分析和非选择性释放颗粒
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-01 Epub Date: 2025-11-20 DOI: 10.1016/j.mne.2025.100332
Alexandre Chargueraud , Lars Kool , Jacques Fattaccioli
We present a microfluidic device that enables trapping, analysis and on-demand release of individual microparticles using membrane deformation induced by pneumatic actuation. Inspired by the Pachinko-like architecture, the system integrates an array of traps supported by a deformable membrane. The latter is actuated by pressure control in a pneumatic chamber bonded above it. Unlike conventional designs with rigid guiding structures, our modified configuration maximizes trapping membrane mobility by introducing a wide, elliptical cavity and suspended rectilinear flow guides.
To characterize the device, we performed deformation measurements under controlled negative pressure using confocal microscopy. These measurements revealed pressure-dependent displacement profiles, which were compared to several theoretical models. A strong agreement was observed with the thick-membrane approximation, confirming its suitability for future scaling. Deformation in the z-direction reached over 120 μm under −100 mbar in the pneumatic chamber, enabling the release of 80-μm-diameter particles.
Trapping and release sequences were demonstrated under a microscope by applying controlled fluidic and pneumatic pressures. The device reproducibly captured and released microparticles within seconds. To highlight the automation potential, we integrated a custom Python-based interface using μManager libraries to control imaging, motion, and fluidic systems (accessible in this paper to be used by the readers). The platform autonomously performed full cycles of particle trapping, image acquisition, and release, including priming steps to prevent air bubble formation in the PDMS microchannels.
This work demonstrates a robust and fully automated microfluidic platform capable of reversible particle immobilization. The system is suitable for applications requiring high-throughput single-object analysis, such as screening assays, mechanobiology, or dynamic imaging workflows.
我们提出了一种微流体装置,可以利用气动驱动引起的膜变形来捕获、分析和按需释放单个微颗粒。受弹珠哥式建筑的启发,该系统集成了一系列由可变形膜支撑的陷阱。后者是通过连接在其上方的气动腔中的压力控制来驱动的。与传统的刚性导向结构设计不同,我们改进的配置通过引入一个宽的椭圆腔和悬浮的直线导流器,最大限度地提高了捕集膜的流动性。为了表征该装置,我们使用共聚焦显微镜在受控负压下进行变形测量。这些测量结果揭示了与压力相关的位移曲线,并将其与几个理论模型进行了比较。观察到与厚膜近似的强烈一致性,证实了其对未来缩放的适用性。在−100 mbar的压力下,气室的z向变形达到了120 μm以上,释放了直径为80 μm的颗粒。在显微镜下通过控制流体和气动压力演示捕获和释放序列。该装置可在几秒钟内捕获并释放微粒。为了突出自动化潜力,我们使用μManager库集成了一个基于python的自定义接口来控制成像,运动和流体系统(在本文中可供读者使用)。该平台自动完成了粒子捕获、图像采集和释放的完整周期,包括防止PDMS微通道中气泡形成的启动步骤。这项工作展示了一个强大的、全自动的微流控平台,能够可逆地固定颗粒。该系统适用于需要高通量单对象分析的应用,如筛选分析、机械生物学或动态成像工作流程。
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引用次数: 0
Fabrication and characterization of a streamlined micro hot wire probe to reduce aerodynamic disturbances 减少空气动力干扰的流线型微热丝探针的制造与表征
IF 3.1 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-01 Epub Date: 2025-10-21 DOI: 10.1016/j.mne.2025.100326
Baptiste Baradel , Olivier Léon , Léo Chamard , Philippe Combette , Fabien Méry , Alain Giani
The miniaturization of sensing elements in hot-wire anemometry through micro-fabrication techniques enables high temporal and spatial resolution, essential for investigating complex and high-speed flows. However, hot-wire probes remain inherently intrusive, and minimizing disturbances caused by the probe is critical for accurate measurements at small scales. This study focuses on the development of a micro hot-wire (xμHW) sensor with reduced disturbances through the implementation of a streamlined geometry. By developing a micro-fabrication process, based among others on silicon’s aspect ratio-dependent etching properties, a new sensor prototype was produced. Experimental characterization in a wall-bounded flow highlights the potential and limitations of this streamlined design for aerodynamic applications.
通过微制造技术,热线风速测量传感元件的小型化实现了高时间和空间分辨率,这对于研究复杂和高速流动至关重要。然而,热线探头仍然具有固有的侵入性,并且最小化探头引起的干扰对于在小尺度上进行精确测量至关重要。本研究的重点是开发一种微热线(xμHW)传感器,通过实现流线型几何结构来减少干扰。通过开发一种基于硅长宽比相关蚀刻特性的微加工工艺,生产了一种新的传感器原型。在有壁流动中的实验表征突出了这种流线型设计在空气动力学应用中的潜力和局限性。
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引用次数: 0
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Micro and Nano Engineering
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