Pub Date : 2024-08-10DOI: 10.1016/j.mne.2024.100281
T.P. Maslin, S. Gutschmidt
This work presents a Python-based architecture packaged as a standalone tool, to enable the parameterization of lithography structures without the need for scripting. By feeding a lithography template file obtained from an existing layout editor into the tool, a ‘scaffold’ shape is created and recognised. The tool allows for the parameterization of created geometries and the establishment of parameterized rules between geometric features, which can be conveniently modified in tabular format. This work facilitates no-code procedural generation of geometrically distinct instances, significantly reducing the time required for complex lithography template development compared to traditional scripting methods.
{"title":"No-code method for lithography template cell parameterization for faster design cycles","authors":"T.P. Maslin, S. Gutschmidt","doi":"10.1016/j.mne.2024.100281","DOIUrl":"10.1016/j.mne.2024.100281","url":null,"abstract":"<div><p>This work presents a Python-based architecture packaged as a standalone tool, to enable the parameterization of lithography structures without the need for scripting. By feeding a lithography template file obtained from an existing layout editor into the tool, a ‘scaffold’ shape is created and recognised. The tool allows for the parameterization of created geometries and the establishment of parameterized rules between geometric features, which can be conveniently modified in tabular format. This work facilitates no-code procedural generation of geometrically distinct instances, significantly reducing the time required for complex lithography template development compared to traditional scripting methods.</p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"24 ","pages":"Article 100281"},"PeriodicalIF":2.8,"publicationDate":"2024-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590007224000443/pdfft?md5=b849aebcd1e12eaf2f43bad6dfa2cea8&pid=1-s2.0-S2590007224000443-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141979005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We propose aluminum oxide (Boehmite) sputter-deposited with Ag substrates for Surface-Enhanced Raman Spectroscopy (SERS). These substrates are cost-effective and easily fabricated by heating aluminum in an aqueous environment to create Boehmite, followed by Ag sputtering. The metal deposition is optimized, resulting in random arrays of Ag nanostructures with a diameter of ∼100 nm and a spacing of <100 nm leading to significant enhancement of the Raman signal. The performance and sensitivity of the substrates are initially tested with the use of Crystal Violet analyte which results in limits of detection close to 10−10M. These substrates are used for the rapid detection of four different explosive compounds: Nitroglycerin (NG), Picric Acid (PA), Cyclotrimethylene trinitramine (RDX) and 2,4,6-Trinitrophenylmethylnitramine (Tetryl). A series of Raman spectra are collected for these four selected explosives on the fabricated substrates and principal component analysis (PCA) was used for proper evaluation and identification of the corresponding measured spectra.
{"title":"Ag-deposited nanostructured Boehmite substrates for the detection of explosives with surface enhanced Raman spectroscopy","authors":"Anastasios Dimitriou , Athina S. Kastania , Panagiotis Sarkiris , Vasyl Shvalya , Nikolaos Papanikolaou , Uros Cvelbar , Evangelos Gogolides","doi":"10.1016/j.mne.2024.100279","DOIUrl":"10.1016/j.mne.2024.100279","url":null,"abstract":"<div><p>We propose aluminum oxide (Boehmite) sputter-deposited with Ag substrates for Surface-Enhanced Raman Spectroscopy (SERS). These substrates are cost-effective and easily fabricated by heating aluminum in an aqueous environment to create Boehmite, followed by Ag sputtering. The metal deposition is optimized, resulting in random arrays of Ag nanostructures with a diameter of ∼100 nm and a spacing of <100 nm leading to significant enhancement of the Raman signal. The performance and sensitivity of the substrates are initially tested with the use of Crystal Violet analyte which results in limits of detection close to 10<sup>−10</sup>M. These substrates are used for the rapid detection of four different explosive compounds: Nitroglycerin (NG), Picric Acid (PA), Cyclotrimethylene trinitramine (RDX) and 2,4,6-Trinitrophenylmethylnitramine (Tetryl). A series of Raman spectra are collected for these four selected explosives on the fabricated substrates and principal component analysis (PCA) was used for proper evaluation and identification of the corresponding measured spectra.</p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"24 ","pages":"Article 100279"},"PeriodicalIF":2.8,"publicationDate":"2024-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S259000722400042X/pdfft?md5=de10afe563b5ce1f74f89ab83ce3319b&pid=1-s2.0-S259000722400042X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141962774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-31DOI: 10.1016/j.mne.2024.100278
E.-M. Papia , V. Constantoudis , D. Ioannou , A. Zeniou , Y. Hou , P. Shah , M. Kappl , E. Gogolides
Membranes play a critical role in diverse applications, including filtration and tissue engineering. The importance of membrane performance optimization highlights the necessity of accurately characterizing the pore structure. Traditional Pore Size Distribution methodologies are widely used to quantify size uniformity. Uniformity though, integrates both size and spatial pore structure aspects, thus necessitating the synergy of complementary techniques to analyze pore structure. This work empowers classic pore metrology with stochastic geometry, specifically the Nearest Neighbour Index (NNI) to assess the spatial uniformity of pores in membrane Scanning Electron Microscopy (SEM) images. Through a comprehensive analysis of Polytetrafluoroethylene (PTFE) before and after plasma etching, along with nanofilament coated Polyethersulfone (PES) membranes, this analysis enhances our understanding of membrane morphology through pore structure and pore spatial arrangement. The findings indicate that increasing magnification leads to a decrease in apparent spatial uniformity, indicative of effects regarding the inclusion in analysis of families of finer pores. In almost all cases, NNI values show higher uniformity compared to a fully random scenario. Additionally, it is found that plasma etching does not have significant effects on spatial uniformity introducing only a slight uniformity in pore centroid arrangement, reflected in a small NNI increase. Furthermore, a pore area shuffling technique reveals the effects of pore density and size on spatial uniformity, highlighting patterns inherent to the materials under study.
膜在过滤和组织工程等各种应用中发挥着至关重要的作用。膜性能优化的重要性凸显了准确表征孔结构的必要性。传统的孔径分布方法被广泛用于量化孔径均匀性。然而,均匀性综合了尺寸和空间孔隙结构两个方面,因此需要互补技术的协同作用来分析孔隙结构。这项研究利用随机几何,特别是近邻指数(NNI)来评估膜扫描电子显微镜(SEM)图像中孔隙的空间均匀性。通过对等离子蚀刻前后的聚四氟乙烯(PTFE)以及纳米纤丝涂层聚醚砜(PES)膜进行综合分析,该分析通过孔结构和孔空间排列增强了我们对膜形态的理解。研究结果表明,放大倍数的增加会导致明显的空间均匀性下降,这表明在分析中纳入更细小的孔系列会产生影响。与完全随机的情况相比,几乎在所有情况下,NNI 值都显示出更高的均匀性。此外,研究还发现等离子体蚀刻对空间均匀性的影响并不显著,只是在孔隙中心点排列上引入了轻微的均匀性,这反映在 NNI 的小幅增加上。此外,孔隙区域洗牌技术揭示了孔隙密度和大小对空间均匀性的影响,突出了所研究材料的固有模式。
{"title":"Quantifying pore spatial uniformity: Application on membranes before and after plasma etching","authors":"E.-M. Papia , V. Constantoudis , D. Ioannou , A. Zeniou , Y. Hou , P. Shah , M. Kappl , E. Gogolides","doi":"10.1016/j.mne.2024.100278","DOIUrl":"10.1016/j.mne.2024.100278","url":null,"abstract":"<div><p>Membranes play a critical role in diverse applications, including filtration and tissue engineering. The importance of membrane performance optimization highlights the necessity of accurately characterizing the pore structure. Traditional Pore Size Distribution methodologies are widely used to quantify size uniformity. Uniformity though, integrates both size and spatial pore structure aspects, thus necessitating the synergy of complementary techniques to analyze pore structure. This work empowers classic pore metrology with stochastic geometry, specifically the Nearest Neighbour Index (NNI) to assess the spatial uniformity of pores in membrane Scanning Electron Microscopy (SEM) images. Through a comprehensive analysis of Polytetrafluoroethylene (PTFE) before and after plasma etching, along with nanofilament coated Polyethersulfone (PES) membranes, this analysis enhances our understanding of membrane morphology through pore structure and pore spatial arrangement. The findings indicate that increasing magnification leads to a decrease in apparent spatial uniformity, indicative of effects regarding the inclusion in analysis of families of finer pores. In almost all cases, NNI values show higher uniformity compared to a fully random scenario. Additionally, it is found that plasma etching does not have significant effects on spatial uniformity introducing only a slight uniformity in pore centroid arrangement, reflected in a small NNI increase. Furthermore, a pore area shuffling technique reveals the effects of pore density and size on spatial uniformity, highlighting patterns inherent to the materials under study.</p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"24 ","pages":"Article 100278"},"PeriodicalIF":2.8,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590007224000418/pdfft?md5=88a2d1b5f4316afeeaf425b5362a4e4c&pid=1-s2.0-S2590007224000418-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141962533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-27DOI: 10.1016/j.mne.2024.100276
J. Paraszczak , J.M. Shaw , D.P. Kern , P. Argitis , D. Davazoglou , I. Raptis , D. Tsoukalas , E. Gogolides
Although this opinion paper tracks the career of Mike Hatzakis (as he liked to be called), and explains the impact he made on the IT industry, it is not intended to be comprehensive insofar as the work that was underway during his career is concerned. Thus, the intent is not to cite all relevant work in the field of Semiconductor lithography, where Mike made such an impact, but to provide a historic and human perspective of this remarkable man from the land of the Minotaur (Crete) and his career, the work he championed in his labs in the US and later Greece and his very human approach to science, technology, and to people.
尽管本意见书追溯了迈克-哈扎基斯(Mike Hatzakis,人们喜欢这样称呼他)的职业生涯,并解释了他对 IT 行业的影响,但就其职业生涯中正在进行的工作而言,本意见书并不打算做到面面俱到。因此,本书的目的并不是列举迈克在半导体光刻领域所做的所有相关工作,而是从历史和人性的角度,介绍这位来自牛头人之乡(克里特岛)的杰出人物及其职业生涯、他在美国和希腊实验室所倡导的工作,以及他对科学、技术和人所采取的非常人性化的方法:下载高清图片 (200KB)Download:下载全尺寸图片
{"title":"Michael Hatzakis, semiconductor industry pioneer","authors":"J. Paraszczak , J.M. Shaw , D.P. Kern , P. Argitis , D. Davazoglou , I. Raptis , D. Tsoukalas , E. Gogolides","doi":"10.1016/j.mne.2024.100276","DOIUrl":"10.1016/j.mne.2024.100276","url":null,"abstract":"<div><p>Although this opinion paper tracks the career of Mike Hatzakis (as he liked to be called), and explains the impact he made on the IT industry, it is not intended to be comprehensive insofar as the work that was underway during his career is concerned. Thus, the intent is not to cite all relevant work in the field of Semiconductor lithography, where Mike made such an impact, but to provide a historic and human perspective of this remarkable man from the land of the Minotaur (Crete) and his career, the work he championed in his labs in the US and later Greece and his very human approach to science, technology, and to people.<span><figure><span><img><ol><li><span><span>Download: <span>Download high-res image (200KB)</span></span></span></li><li><span><span>Download: <span>Download full-size image</span></span></span></li></ol></span></figure></span></p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"24 ","pages":"Article 100276"},"PeriodicalIF":2.8,"publicationDate":"2024-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S259000722400039X/pdfft?md5=0dd817c39162f110bd05b18c50bfab77&pid=1-s2.0-S259000722400039X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141841836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage. While operating as a SET, charge on a silicon quantum dot (QD) within the current channel, can be controlled at the one-electron level using the Coulomb blockade effect. This paper investigates nanofabrication methods for sub-10 nm ‘fin’ channel hybrid RT SET-FETs, and their influence on the energy band diagram, and formation of tunnel barriers and QDs, along the channel. Devices are fabricated in heavily n-doped SOI material using electron beam lithography, with thermal oxidation to reduce the as-defined fin width. Effective channel dimensions, following oxidation and excluding Si/SiO2 interface dopant deactivation, are ∼2.4 nm 32 nm 20 nm. Dopant disorder, fin width variation at the nanometre scale, and quantum confinement effects are considered as mechanisms for the formation of tunnel barriers and QDs, with dopant disorder the most likely reason. Arrhenius plots of Ids vs. 1/T allow extraction of a potential barrier energy ∼0.2 eV along the fin channel. For 180devices fabricated on four chips, 37% show RT SET-FET operation, ∼3 times higher than the corresponding yield observed in previous work on point-contact silicon SETs.
混合室温(RT)硅单电子场效应晶体管(SET-FET)提供了一种利用栅极电压在 "经典 "大电流场效应晶体管和低功耗 SET 工作之间切换的方法。在作为 SET 工作时,电流通道内硅量子点 (QD) 上的电荷可利用库仑封锁效应控制在单电子水平。本文研究了 10 纳米以下 "鳍 "沟道混合 RT SET-FET 的纳米制造方法,以及这些方法对能带图、沟道内隧道势垒和 QD 的形成的影响。利用电子束光刻技术在重度 n 掺杂的 SOI 材料中制造器件,并通过热氧化来减小确定的鳍宽度。氧化后的有效沟道尺寸为 2.4 nm × 32 nm × 20 nm,不包括硅/二氧化硅界面掺杂失活。隧道势垒和 QDs 的形成机制包括掺杂失调、纳米尺度的翅片宽度变化和量子约束效应,其中掺杂失调是最可能的原因。通过 Ids vs. 1/T 的 Arrhenius 图,可以提取出沿翅片通道的势垒能 ∼0.2eV。在四个芯片上制作的 180 个器件中,有 37% 显示了 RT SET-FET 工作,比以前在点接触硅 SET 上观察到的相应产量高出 3 倍。
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Pub Date : 2024-07-25DOI: 10.1016/j.mne.2024.100277
Seyedmajid Hosseini , Jack C. Koch , Yue Liu , Ignatius Semmes , Isabelina Nahmens , W. Todd Monroe , Jian Xu , Terrence R. Tiersch
Aquatic germplasm repositories can play a pivotal role in securing the genetic diversity of natural populations and agriculturally important aquatic species. However, existing technologies for repository development and operation face challenges in terms of accuracy, precision, efficiency, and cost-effectiveness, especially for microdevices used in gamete quality evaluation. Quality management is critical throughout genetic resource protection processes from sample collection to final usage. In this study, we examined the potential of using three-dimensional (3-D) stereolithography resin printing to address these challenges and evaluated the overall capabilities and limitations of a representative industrial 3-D resin printer with a price of US$18,000, a consumer-level printer with a price <US$700, and soft lithography, a conventional microfabrication method. A standardized test object, the Integrated Geometry Sampler (IGS), and a device with application in repository quality management, the Single-piece Sperm Counting Chamber (SSCC), were printed to determine capabilities and evaluate differences in targeted versus printed depths and heights. The IGS design had an array of negative and positive features with dimensions ranging from 1 mm to 0.02 mm in width and depth. The SSCC consisted of grid and wall features to facilitate cell counting. The SSCC was evaluated with polydimethylsiloxane (PDMS) devices cast from a typical photoresist and silicon mold. Fabrication quality was evaluated by optical profilometry for parameters such as dimensional accuracy, precision, and visual morphology. Fabrication time and cost were also evaluated. The precision, reliability, and surface quality of industrial-grade 3-D resin printing were satisfactory for operations requiring depths or heights larger than 0.1 mm due to a low discrepancy between targeted and measured dimensions across a range of 1 mm to 0.1 mm. Meanwhile, consumer-grade printers were suitable for microdevices with depths or heights larger than 0.2 mm. While the performance of either of these printers could be further optimized, their current capabilities, broad availability, low cost of operation, high throughput, and simplicity offer great promise for rapid development and widespread use of standardized microdevices for numerous applications, including gamete quality evaluation and “laboratory-on-a-chip” applications in support of aquatic germplasm repositories.
{"title":"Evaluation of industrial and consumer 3-D resin printer fabrication of microdevices for quality management of genetic resources in aquatic species","authors":"Seyedmajid Hosseini , Jack C. Koch , Yue Liu , Ignatius Semmes , Isabelina Nahmens , W. Todd Monroe , Jian Xu , Terrence R. Tiersch","doi":"10.1016/j.mne.2024.100277","DOIUrl":"10.1016/j.mne.2024.100277","url":null,"abstract":"<div><p>Aquatic germplasm repositories can play a pivotal role in securing the genetic diversity of natural populations and agriculturally important aquatic species. However, existing technologies for repository development and operation face challenges in terms of accuracy, precision, efficiency, and cost-effectiveness, especially for microdevices used in gamete quality evaluation. Quality management is critical throughout genetic resource protection processes from sample collection to final usage. In this study, we examined the potential of using three-dimensional (3-D) stereolithography resin printing to address these challenges and evaluated the overall capabilities and limitations of a representative industrial 3-D resin printer with a price of US$18,000, a consumer-level printer with a price <US$700, and soft lithography, a conventional microfabrication method. A standardized test object, the Integrated Geometry Sampler (IGS), and a device with application in repository quality management, the Single-piece Sperm Counting Chamber (SSCC), were printed to determine capabilities and evaluate differences in targeted versus printed depths and heights. The IGS design had an array of negative and positive features with dimensions ranging from 1 mm to 0.02 mm in width and depth. The SSCC consisted of grid and wall features to facilitate cell counting. The SSCC was evaluated with polydimethylsiloxane (PDMS) devices cast from a typical photoresist and silicon mold. Fabrication quality was evaluated by optical profilometry for parameters such as dimensional accuracy, precision, and visual morphology. Fabrication time and cost were also evaluated. The precision, reliability, and surface quality of industrial-grade 3-D resin printing were satisfactory for operations requiring depths or heights larger than 0.1 mm due to a low discrepancy between targeted and measured dimensions across a range of 1 mm to 0.1 mm. Meanwhile, consumer-grade printers were suitable for microdevices with depths or heights larger than 0.2 mm. While the performance of either of these printers could be further optimized, their current capabilities, broad availability, low cost of operation, high throughput, and simplicity offer great promise for rapid development and widespread use of standardized microdevices for numerous applications, including gamete quality evaluation and “laboratory-on-a-chip” applications in support of aquatic germplasm repositories.</p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"24 ","pages":"Article 100277"},"PeriodicalIF":2.8,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590007224000406/pdfft?md5=37334bdc422b34d72765c80fe269e820&pid=1-s2.0-S2590007224000406-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141848763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-20DOI: 10.1016/j.mne.2024.100274
Valentin Daniel , Jérémie Chretien , Sonia Blais , Jinyoun Cho , Kristof Dessein , Gwenaelle Hamon , Abderraouf Boucherif , Maxime Darnon
Mesoporous germanium (MP-Ge) emerges as a very appealing material for many applications such as anode material for Lithium-Ion batteries due to it high specific area and large void spaces or, in optoelectronics as sacrificial layer for III-V materials growth and detachment, allowing notably several uses of a single Ge substrate. These porous nanostructures are distinguished by a large specific surface area and are prone to degradation with time due to exposure to the environment. To understand and be able to reduce this effect, we studied the chemical and morphological evolution of porous germanium layers under various ambient storage conditions for 3 months to identify the main parameters responsible for material degradation. This study demonstrates that the ambient air environment leads to the growth of native oxide, leading to major morphology changes. Scanning electrons microscope (SEM) showed the formation of clusters and the enlargement of the pores after 90 days. These structural modifications are caused by the oxidation of Ge, and more specifically by the creation of GeO2 matrices due to the synergy of dioxygen (O2) and humidity (H2O(g)). The energy brought by light can exacerbate these phenomena and thus accelerate the degradation rate of the pore morphology. Based on these experimental results, we propose efficient solutions to limit the GeO2 proportions and the clusters' appearance, by storing them under a dry neutral atmosphere (Ar) or by adding a hydrogen halide pre-treatment (10s 1% HBr solution).
介孔锗(MP-Ge)因其高比表面积和大空隙,在许多应用领域成为一种极具吸引力的材料,例如用作锂离子电池的负极材料,或在光电子学中用作 III-V 材料生长和分离的牺牲层,从而使单一的 Ge 衬底具有多种用途。这些多孔纳米结构的特点是比表面积大,暴露在环境中容易随时间退化。为了了解并减少这种影响,我们研究了多孔锗层在各种环境储存条件下 3 个月的化学和形态演变,以确定导致材料降解的主要参数。这项研究表明,环境空气环境会导致原生氧化物的生长,从而导致形态发生重大变化。扫描电子显微镜(SEM)显示,90 天后形成了团块并扩大了孔隙。这些结构变化是由 Ge 氧化引起的,更具体地说,是由于二氧(O2)和湿度(H2O(g))的协同作用产生了 GeO2 基质。光带来的能量会加剧这些现象,从而加快孔隙形态的退化速度。根据这些实验结果,我们提出了限制 GeO2 比例和晶簇出现的有效解决方案,即在干燥的中性气氛(Ar)下储存或添加卤化氢预处理(10s 1%HBr溶液)。
{"title":"Morphological and chemical evolution of monocrystalline porous germanium over time in various storage environments","authors":"Valentin Daniel , Jérémie Chretien , Sonia Blais , Jinyoun Cho , Kristof Dessein , Gwenaelle Hamon , Abderraouf Boucherif , Maxime Darnon","doi":"10.1016/j.mne.2024.100274","DOIUrl":"10.1016/j.mne.2024.100274","url":null,"abstract":"<div><p>Mesoporous germanium (MP-Ge) emerges as a very appealing material for many applications such as anode material for Lithium-Ion batteries due to it high specific area and large void spaces or, in optoelectronics as sacrificial layer for III-V materials growth and detachment, allowing notably several uses of a single Ge substrate<u><em>.</em></u> These porous nanostructures are distinguished by a large specific surface area and are prone to degradation with time due to exposure to the environment. To understand and be able to reduce this effect, we studied the chemical and morphological evolution of porous germanium layers under various ambient storage conditions for 3 months to identify the main parameters responsible for material degradation. This study demonstrates that the ambient air environment leads to the growth of native oxide, leading to major morphology changes. Scanning electrons microscope (SEM) showed the formation of clusters and the enlargement of the pores after 90 days. These structural modifications are caused by the oxidation of Ge, and more specifically by the creation of GeO<sub>2</sub> matrices due to the synergy of dioxygen (O<sub>2</sub>) and humidity (H<sub>2</sub>O<sub>(g)</sub>). The energy brought by light can exacerbate these phenomena and thus accelerate the degradation rate of the pore morphology. Based on these experimental results, we propose efficient solutions to limit the GeO<sub>2</sub> proportions and the clusters' appearance, by storing them under a dry neutral atmosphere (Ar) or by adding a hydrogen halide pre-treatment (10s 1% HBr solution).</p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"24 ","pages":"Article 100274"},"PeriodicalIF":2.8,"publicationDate":"2024-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590007224000376/pdfft?md5=af41d282b5736f24ee5d09a09560c11a&pid=1-s2.0-S2590007224000376-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141731768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1016/j.mne.2024.100273
E. Cunaj , E. Gogolides , A. Tserepi , K. Ellinas
Microscale patterning on flexible substrates is important in many applications such as in wearable sensors and microfluidics-based diagnostics, therefore low-cost fabrication methods which are scalable and amenable to mass production have attracted the interest of many companies and research groups. Dry film resists (DFRs) are commercially available materials with properties compatible with their implementation on flexible substrates to cover a wide range of applications, which also offer environmental and sustainability benefits due to the low waste generation compared to the liquid resists. However, there are limited detailed reports in the literature regarding the use of DFRs for the fabrication of microfluidic channels or other micropatterns (i.e., posts) on thin and flexible substrates. Herein we present in detail the fabrication of: a) microfluidic channels of width ranging from 50 μm up to 800 μm, and depth ranging from 30 μm up to 270 μm and b) square posts 80 μm × 80 μm in size and 30 μm in height. Particularly, our method enables the fabrication of ultra-deep microchannels (depth > 250 μm), highly ordered post arrays over large area (appr. 60 cm2), as well as complex designs with hierarchical scale features (80 μm posts inside 800 μm microchannels or micro-nanotexturing inside microchannels) on ultra-thin flexible substrates. To demonstrate the versatility of the method, three different DFRs were used on ultra-thin (30 μm), flexible, single-sided copper-clad polyimide substrates. It is also demonstrated that DFRs can be effectively modified using plasma etching to tune the surface wetting properties towards applications such as pumpless capillary action, where such functionality is required.
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Pub Date : 2024-07-10DOI: 10.1016/j.mne.2024.100272
Giorgia Rinaldi , Davide Vurro , Martina Cicolini , Jovana Babic , Aris Liboà , Giuseppe Tarabella , Pasquale D'Angelo , Simone L. Marasso , Matteo Cocuzza , Lorenzo Vigna , Fabrizio C. Pirri , Matteo Parmeggiani
As the world moves towards integrating new functionalities into everyday objects, the demand for diverse substrates grows, making additive manufacturing an invaluable tool. Organic electronic materials have played a major role in this transition thanks to their excellent electronic and mechanical properties, adaptability and solution processability.
The aim of this study is to compare spin coating, inkjet printing (IJP), and aerosol jet printing (AJP) for applying poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as the channel material in organic electrochemical transistors (OECTs). This work investigates the often-overlooked impact of deposition techniques on the electrical performance of OECTs. Spin coating has been analysed as a reference technique, while AJP and IJP are addressed as promising pathways towards fully printed OECTs.
The normalized transconductance and Ion/Ioff ratio have been analysed as figures of merit for this study. AJP devices have shown the best performance, displaying a normalized transconductance of 885 S∙nm and an Ion/Ioff ratio around 103. The spin coated OECTs showed a slightly lower normalized transconductance (740 S∙nm) and much lower Ion/Ioff ratio in the order of 101. Last, IJP exhibited a transconductance of 433 S∙nm and a Ion/Ioff ratio in the order of 102.
This work could be beneficial for a wide range of applications, adding an additional degree of freedom to the tunability of the OECT channel properties. It also opens the discussion for more comprehensive studies on the films from a materials perspective.
{"title":"PEDOT:PSS deposition in OECTs: Inkjet printing, aerosol jet printing and spin coating","authors":"Giorgia Rinaldi , Davide Vurro , Martina Cicolini , Jovana Babic , Aris Liboà , Giuseppe Tarabella , Pasquale D'Angelo , Simone L. Marasso , Matteo Cocuzza , Lorenzo Vigna , Fabrizio C. Pirri , Matteo Parmeggiani","doi":"10.1016/j.mne.2024.100272","DOIUrl":"https://doi.org/10.1016/j.mne.2024.100272","url":null,"abstract":"<div><p>As the world moves towards integrating new functionalities into everyday objects, the demand for diverse substrates grows, making additive manufacturing an invaluable tool. Organic electronic materials have played a major role in this transition thanks to their excellent electronic and mechanical properties, adaptability and solution processability.</p><p>The aim of this study is to compare spin coating, inkjet printing (IJP), and aerosol jet printing (AJP) for applying poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as the channel material in organic electrochemical transistors (OECTs). This work investigates the often-overlooked impact of deposition techniques on the electrical performance of OECTs. Spin coating has been analysed as a reference technique, while AJP and IJP are addressed as promising pathways towards fully printed OECTs.</p><p>The normalized transconductance and I<sub>on</sub>/I<sub>off</sub> ratio have been analysed as figures of merit for this study. AJP devices have shown the best performance, displaying a normalized transconductance of 885 S∙nm and an I<sub>on</sub>/I<sub>off</sub> ratio around 10<sup>3</sup>. The spin coated OECTs showed a slightly lower normalized transconductance (740 S∙nm) and much lower I<sub>on</sub>/I<sub>off</sub> ratio in the order of 10<sup>1</sup>. Last, IJP exhibited a transconductance of 433 S∙nm and a I<sub>on</sub>/I<sub>off</sub> ratio in the order of 10<sup>2</sup>.</p><p>This work could be beneficial for a wide range of applications, adding an additional degree of freedom to the tunability of the OECT channel properties. It also opens the discussion for more comprehensive studies on the films from a materials perspective.</p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"24 ","pages":"Article 100272"},"PeriodicalIF":2.8,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590007224000352/pdfft?md5=728bcc64af1c5273c9475d39496a35c1&pid=1-s2.0-S2590007224000352-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141606050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1016/j.mne.2024.100270
Daniel Fan , Carlas S. Smith , Ranjith R. Unnithan , Sejeong Kim
A rapid and robust method to fabricate transmission diffractive optical elements in the visible wavelengths is presented. By additive manufacturing of a polymeric photo-resin using 2-photon lithography followed by encasing of the structure in another resin with similar refractive index, the height of the structure can be made much larger, thus trading-off fabrication height for refractive index difference of the two materials. After adjusting for resin shrinkage, different diffractive optical element designs including an m = 1 vortex plate, and Laguerre-Gaussian beams with azimuthal and radial indices of (1,1), (1,2), and (2,1) were demonstrated. Experimental results show intensity patterns matching that of simulations, including size and features, although some aberration was observed, possibly due to fabrication tolerance errors or beam misalignment. This technique adds to the toolkit of micro-optics fabrication methods using additive manufacturing and 3D printing, and it would be beneficial for rapid prototyping and integration with miniaturised systems.
本文介绍了一种快速、稳健的方法,用于制造可见光波段的透射衍射光学元件。通过使用双光子光刻技术对聚合物光敏树脂进行增材制造,然后将结构包裹在折射率相似的另一种树脂中,可以使结构的高度大大增加,从而以两种材料的折射率差异来权衡制造高度。在对树脂收缩进行调整后,我们展示了不同的衍射光学元件设计,包括 m = 1 涡流板,以及方位角和径向折射率分别为 (1,1)、(1,2) 和 (2,1) 的拉盖尔-高斯光束。实验结果表明,强度模式(包括尺寸和特征)与模拟结果一致,但也观察到一些畸变,这可能是由于制造公差误差或光束偏差造成的。这项技术为使用增材制造和三维打印技术的微型光学制造方法增添了新的工具包,有利于快速原型制造和与微型化系统集成。
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