Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874631
Lei Yao, R. Liang, Chunsheng Jiang, Jing Wang, Jun Xu
It is demonstrated that Ge epilayers with high quantity, low defect density and smooth surface were achieved using cycle method. In addition, the epitaxy of GaAs on the Ge epilayer/Si substrate is also prepared.
{"title":"Study of Si-based Ge heteroepitaxy using RPCVD","authors":"Lei Yao, R. Liang, Chunsheng Jiang, Jing Wang, Jun Xu","doi":"10.1109/ISTDM.2014.6874631","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874631","url":null,"abstract":"It is demonstrated that Ge epilayers with high quantity, low defect density and smooth surface were achieved using cycle method. In addition, the epitaxy of GaAs on the Ge epilayer/Si substrate is also prepared.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114513518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874669
Wei Wang, E. Tok, Y. Yeo
Highly strain-relaxed Ge1-xSnx layers were grown directly on Si(100) by MBE firstly. XRD and AFM measurements demonstrate a good crystalline quality and a relatively flat surface. Ge with 0.82% tensile strain were grown on the Ge0.895Sn0.105/Si, and the tensile-strain value decreases with increasing thickness of Ge epilayers.
{"title":"Growth of tensile-strained Ge layer and highly strain-relaxed Ge1−xSnx buffer layer on silicon by molecular beam epitaxy","authors":"Wei Wang, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874669","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874669","url":null,"abstract":"Highly strain-relaxed Ge<sub>1-x</sub>Sn<sub>x</sub> layers were grown directly on Si(100) by MBE firstly. XRD and AFM measurements demonstrate a good crystalline quality and a relatively flat surface. Ge with 0.82% tensile strain were grown on the Ge<sub>0.895</sub>Sn<sub>0.105</sub>/Si, and the tensile-strain value decreases with increasing thickness of Ge epilayers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125784774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874652
J. Schulze, A. Blech, I. Fischer, D. Hahnel, Sandra Naasz, Eva-Maria Tropper
We presented first results on the fabrication and characterization of vertical Ge heterojunction GAA-TFETs with a Ge0.92Sn0.08-δ-layer at the tunneling junction with transistor body diameters from 10 μm down to 250 nm (pillar geometry).
{"title":"Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge0.92Sn0.08-δ-Layers at the tunneling junction","authors":"J. Schulze, A. Blech, I. Fischer, D. Hahnel, Sandra Naasz, Eva-Maria Tropper","doi":"10.1109/ISTDM.2014.6874652","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874652","url":null,"abstract":"We presented first results on the fabrication and characterization of vertical Ge heterojunction GAA-TFETs with a Ge<sub>0.92</sub>Sn<sub>0.08</sub>-δ-layer at the tunneling junction with transistor body diameters from 10 μm down to 250 nm (pillar geometry).","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124116891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874670
Xuejun Xu, K. Nishida, K. Sawano, T. Maruizumi, Y. Shiraki
Well-resolved resonant PL peaks were observed from microdisks fabricated on heavily n-doped GOI. FSR and Q-factor confirmed that these peaks corresponded to the WGMs of microdisk. Q-factors didn't decrease against pump power, indicating the onset of population inversion. Our results show that GOI is a promising platform to realize lasers.
{"title":"Resonant photoluminescence from Ge microdisks on Ge-on-insulator","authors":"Xuejun Xu, K. Nishida, K. Sawano, T. Maruizumi, Y. Shiraki","doi":"10.1109/ISTDM.2014.6874670","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874670","url":null,"abstract":"Well-resolved resonant PL peaks were observed from microdisks fabricated on heavily n-doped GOI. FSR and Q-factor confirmed that these peaks corresponded to the WGMs of microdisk. Q-factors didn't decrease against pump power, indicating the onset of population inversion. Our results show that GOI is a promising platform to realize lasers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125458782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874651
P. Bhatt, P. Swarnkar, A. Misra, J. Biswas, S. Lodha
This work compares the impact of implantation temperature ranging from cryogenic (-100 °C) to hot (400°C) on the performance of n+/p Ge junctions. Cryogenic implantation on bulk, planar Ge followed by a 400°C rapid thermal anneal leads to higher activation. lower junction depth, lower sheet resistance and lower junction leakage compared to RT and hot (400°C) implantation. The improved junction performance translates into higher ON current and lower OFF leakage for cryo implanted planar Ge n-MOSFETs. On the other hand, high dose/energy cryogenic implants on Ge fins are shown to degrade fin recrystallization due to the absence of a crystalline core because of increased amorphization. Crystallinity of as-implanted Ge fins indicates that hot implantation could be a more viable n+/p junction formation process for Ge FinFET technology.
{"title":"Ge n+/p junctions using temperature-based phosphorous implantation","authors":"P. Bhatt, P. Swarnkar, A. Misra, J. Biswas, S. Lodha","doi":"10.1109/ISTDM.2014.6874651","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874651","url":null,"abstract":"This work compares the impact of implantation temperature ranging from cryogenic (-100 °C) to hot (400°C) on the performance of n+/p Ge junctions. Cryogenic implantation on bulk, planar Ge followed by a 400°C rapid thermal anneal leads to higher activation. lower junction depth, lower sheet resistance and lower junction leakage compared to RT and hot (400°C) implantation. The improved junction performance translates into higher ON current and lower OFF leakage for cryo implanted planar Ge n-MOSFETs. On the other hand, high dose/energy cryogenic implants on Ge fins are shown to degrade fin recrystallization due to the absence of a crystalline core because of increased amorphization. Crystallinity of as-implanted Ge fins indicates that hot implantation could be a more viable n+/p junction formation process for Ge FinFET technology.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131717440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874654
D. Patchett, M. Myronov, S. Rhead, J. Halpin, D. Leadley
High Sn fraction GeSn has been grown by RP-CVD with SnCl4. However, challenges remain in creating device quality material suitable for subsequent growth. Surface segregation of tin, which increases with increased tin fraction, raises doubts about the suitability of GeSn as a platform for subsequent growth. Surface segregation may contribute to difficulties of achieving high growth rates and the growth of alloys with an increased tin fraction. The variability of tin content with depth necessitates the use of specialized compositional characterization such as SIMS. Growth of fully relaxed GeSn epilayers remains elusive, with many grown layers are partially relaxed. However, full relaxation is necessary for a direct bandgap material.
{"title":"Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate","authors":"D. Patchett, M. Myronov, S. Rhead, J. Halpin, D. Leadley","doi":"10.1109/ISTDM.2014.6874654","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874654","url":null,"abstract":"High Sn fraction GeSn has been grown by RP-CVD with SnCl4. However, challenges remain in creating device quality material suitable for subsequent growth. Surface segregation of tin, which increases with increased tin fraction, raises doubts about the suitability of GeSn as a platform for subsequent growth. Surface segregation may contribute to difficulties of achieving high growth rates and the growth of alloys with an increased tin fraction. The variability of tin content with depth necessitates the use of specialized compositional characterization such as SIMS. Growth of fully relaxed GeSn epilayers remains elusive, with many grown layers are partially relaxed. However, full relaxation is necessary for a direct bandgap material.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124675373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874676
A. Hikavyy, E. Rosseel, L. Witters, H. Mertens, P. Ryan, R. Langer, R. Loo
X-ray techniques are indispensable tools for characterization of strained layers during different stages of process development and integration. Even when precise information cannot be obtained in some cases, in combination with other techniques it gives a fast and important feedback.
{"title":"Use of X-ray techniques in the development and production of novel transistor structures","authors":"A. Hikavyy, E. Rosseel, L. Witters, H. Mertens, P. Ryan, R. Langer, R. Loo","doi":"10.1109/ISTDM.2014.6874676","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874676","url":null,"abstract":"X-ray techniques are indispensable tools for characterization of strained layers during different stages of process development and integration. Even when precise information cannot be obtained in some cases, in combination with other techniques it gives a fast and important feedback.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130785114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874653
M. Myronov, S. Rhead, G. Colston, D. Leadley
We have demonstrated Si1-xCx epilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.
{"title":"RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors","authors":"M. Myronov, S. Rhead, G. Colston, D. Leadley","doi":"10.1109/ISTDM.2014.6874653","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874653","url":null,"abstract":"We have demonstrated Si1-xCx epilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133375225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874705
S. Bose, W. Fan, C. Jian, D. Zhang, C. Tan
In this paper, we study one such possible structure - self assembled Ge QDs embedded on Si0.5Ge0.5 virtual substrate with the same capping layer. A wetting layer is considered to simulate the actual scenario. Then we conduct a theoretical study on the strain and electronic band structure of this model. We employ the valence force field (VFF) method using Keating potential to estimate the strain followed by 8 band k·p method to calculate the electronic band structure taking the Γ valley into consideration. Finally we study the optical gain of the system for varying carrier concentrations.
{"title":"Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate","authors":"S. Bose, W. Fan, C. Jian, D. Zhang, C. Tan","doi":"10.1109/ISTDM.2014.6874705","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874705","url":null,"abstract":"In this paper, we study one such possible structure - self assembled Ge QDs embedded on Si0.5Ge0.5 virtual substrate with the same capping layer. A wetting layer is considered to simulate the actual scenario. Then we conduct a theoretical study on the strain and electronic band structure of this model. We employ the valence force field (VFF) method using Keating potential to estimate the strain followed by 8 band k·p method to calculate the electronic band structure taking the Γ valley into consideration. Finally we study the optical gain of the system for varying carrier concentrations.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116809357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-02DOI: 10.1109/ISTDM.2014.6874702
Y. Moriyama, Y. Kamimuta, Y. Kamata, K. Ikeda, S. Takeuchi, Y. Nakamura, A. Sakai, T. Tezuka
n+-Ge layers with a dopant concentration of 1 × 1020 cm-3 and its dopant activation rate as high as 0.7 were obtained by optimizing the growth conditions in LP-CVD. Ti/n+-Ge contacts utilizing Ge:P layers with a carrier concentration of 7 × 1019 cm-3 exhibit ohmic property in contrast to the P ion-implanted Ge samples with almost the same P concentration and carrier concentration of 2 × 1019 cm-3. Thus, a ρc value as low as 1.2 × 10-6 Ωcm2 was obtained for the Ti / Ge:P contact. A low Rsh of 33 (Ω/sqr.) was shown for the 65-nm-thick P-doped Ge layer due to the high carrier concentration. The value of Rsh for the epi-layer agrees with the theoretically predicted value, also resulting in reduction of parasitic resistances of the Ge-nMISFETs. The largest Id of Ge-nMISFET was obtained by utilizing the Ge:P to elevated S/D region of GeOI-nMISFETs. We can say that these results pave the way to the feasibility of Ge-CMOS.
{"title":"Improvement of current drive of Ge-nMISFETs by epitaxially grown n+-Ge:P source and drain","authors":"Y. Moriyama, Y. Kamimuta, Y. Kamata, K. Ikeda, S. Takeuchi, Y. Nakamura, A. Sakai, T. Tezuka","doi":"10.1109/ISTDM.2014.6874702","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874702","url":null,"abstract":"n<sup>+</sup>-Ge layers with a dopant concentration of 1 × 10<sup>20</sup> cm<sup>-3</sup> and its dopant activation rate as high as 0.7 were obtained by optimizing the growth conditions in LP-CVD. Ti/n<sup>+</sup>-Ge contacts utilizing Ge:P layers with a carrier concentration of 7 × 10<sup>19</sup> cm<sup>-3</sup> exhibit ohmic property in contrast to the P ion-implanted Ge samples with almost the same P concentration and carrier concentration of 2 × 10<sup>19</sup> cm<sup>-3</sup>. Thus, a ρ<sub>c</sub> value as low as 1.2 × 10<sup>-6</sup> Ωcm<sup>2</sup> was obtained for the Ti / Ge:P contact. A low R<sub>sh</sub> of 33 (Ω/sqr.) was shown for the 65-nm-thick P-doped Ge layer due to the high carrier concentration. The value of R<sub>sh</sub> for the epi-layer agrees with the theoretically predicted value, also resulting in reduction of parasitic resistances of the Ge-nMISFETs. The largest I<sub>d</sub> of Ge-nMISFET was obtained by utilizing the Ge:P to elevated S/D region of GeOI-nMISFETs. We can say that these results pave the way to the feasibility of Ge-CMOS.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121740950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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